CN113705820B - Quantum bit structure with adjustable coupling strength - Google Patents

Quantum bit structure with adjustable coupling strength Download PDF

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CN113705820B
CN113705820B CN202110930931.1A CN202110930931A CN113705820B CN 113705820 B CN113705820 B CN 113705820B CN 202110930931 A CN202110930931 A CN 202110930931A CN 113705820 B CN113705820 B CN 113705820B
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qubit
pole
capacitor
capacitance
josephson junction
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CN113705820A (en
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相忠诚
宋小会
郭学仪
宋鹏涛
王战
郑东宁
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Institute of Physics of CAS
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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06NCOMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N10/00Quantum computing, i.e. information processing based on quantum-mechanical phenomena

Abstract

There is provided a qubit structure with adjustable coupling strength, comprising: a first qubit, a second qubit, and an adjustable coupler between the first qubit and the second qubit; the first qubit and the second qubit are respectively capacitively coupled to the tunable coupler, and the tunable coupler controls a coupling coefficient between the first qubit and the second qubit; and wherein the first and second qubits are in the form of transmon and the tunable coupler is in the form of xmon.

Description

Quantum bit structure with adjustable coupling strength
Technical Field
The present invention relates generally to the field of multiple qubit chips, and more particularly to a qubit structure with adjustable coupling strength.
Background
The multi-qubit chip with adjustable coupling strength is a chip with multiple qubits with an adjustable coupler. The adjustable coupler between the two qubits can be biased by means of externally applied magnetic flux, so that the coupling coefficient between the qubits can be adjusted. The coupling coefficient between the qubits can be continuously adjusted from positive to negative, so that the coupling strength between every two qubits can be completely turned off or can be arbitrarily adjusted. In the existing qubit structure, both qubits and the tunable coupler are in the form of xmon (see Y.Fei, et.al.2018PHYS.REV.APPLIED 10,054062), which includes a capacitor and a josephson junction connected in parallel, one end of the capacitor and one end of the josephson junction being connected to each other, and the other end being grounded (see fig. 1A). Because the qubit and the tunable coupler in the form of xmon are smaller in size at a specified capacitance value, a large amount of area expansion can be saved on a two-dimensional chip.
But since in the xmon form of qubit the branches affect the ground capacitance of the qubit. Therefore, the area of the qubit in the form of xmon cannot be made larger by branch expansion, so that the qubit in the form of xmon is not easy to be applied to the preparation of a three-dimensional quantum chip by using a flip-chip bonding technology, for example, the routing is not easy to pass through. In addition, in the qubit in the xmon form, the josephson junction is directly grounded, so that the noise of the ground is easy to be introduced, the crosstalk is increased, and the measurement is extremely inconvenient.
Disclosure of Invention
Based on the above-mentioned drawbacks of the prior art, the present invention provides a qubit structure with adjustable coupling strength, comprising: a first qubit, a second qubit, and an adjustable coupler between the first qubit and the second qubit;
the first qubit and the second qubit are respectively capacitively coupled to the tunable coupler, and the tunable coupler controls a coupling coefficient between the first qubit and the second qubit; and
wherein the first and second qubits are in the form of transmon and the tunable coupler is in the form of xmon.
Preferably, the adjustable coupler comprises:
a first capacitor including a first pole and a second pole; and
a first josephson junction comprising a first pole connected to a first pole of the first capacitance; and a second pole connected to the second pole of the first capacitor and to ground.
Preferably, the first qubit includes:
a second capacitor having a second electrode connected to ground, the first electrode connected to the first electrode of the third capacitor and the first electrode of the second josephson junction;
the second pole of the third capacitor and the second pole of the second josephson junction are connected to the first pole of a fourth capacitor, the second pole of the fourth capacitor being grounded.
Preferably, the second qubit includes:
a fifth capacitor having a second electrode connected to ground, the first electrode connected to the first electrode of the sixth capacitor and the first electrode of the third josephson junction;
the second pole of the sixth capacitance and the second pole of the third josephson junction are connected and connected to the first pole of a seventh capacitance, the second pole of the seventh capacitance being grounded.
Preferably, at least one of the first qubit and the second qubit comprises a branching structure.
Preferably, the branching structure is coupled to the adjustable coupler.
Preferably, the first, second and third josephson junctions are squid double junctions.
Preferably, the first qubit, the second qubit and the tunable coupler are not on the same substrate.
Preferably, the first pole of the second capacitor forms the first pole of the third capacitor, and the first pole of the fourth capacitor forms the second pole of the third capacitor;
the first pole of the fifth capacitor forms the first pole of the sixth capacitor and the first pole of the seventh capacitor forms the second pole of the sixth capacitor.
Preferably, the first qubit, the second qubit and the tunable coupler are capacitively coupled with or without a direct capacitive coupling.
The quantum bit structure with adjustable coupling strength adopts a form of trans-mon-xmon-trans-mon, and the quantum adjustable coupling chip prepared by adopting the design can randomly adjust the areas of the first quantum bit and the second quantum bit and can adjust the coupling value between the quantum bits. the design of the trans-xmon-trans forms makes the distance between the qubits larger and easier to route in the design of the three-dimensional quantum chip, and reduces the mutual interference between the qubits. Noise and crosstalk are reduced because the josephson junction in the qubit is not grounded, making measurement more convenient.
Drawings
FIG. 1A is a schematic circuit diagram of a quantum tunable coupler according to one embodiment of the invention;
FIG. 1B is a top view of the process structure of the quantum tunable coupler of FIG. 1A;
FIG. 1C is a cross-sectional view along the dashed line MM' in FIG. 1B;
FIG. 2A is a schematic circuit configuration of a qubit according to one embodiment of the invention;
FIG. 2B is a top view of the process structure of the qubit of FIG. 2A;
FIG. 2C is a cross-sectional view along the dashed line NN' in FIG. 2B;
FIG. 3A is a schematic diagram of a qubit structure with adjustable coupling strength according to one embodiment of the invention;
FIG. 3B is a top view of the process structure of the tunable coupling strength qubit structure of FIG. 3A;
fig. 4 is a top view of a process structure with branched, coupling strength tunable qubit structures.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be further described in detail by means of specific embodiments with reference to the accompanying drawings. It should be noted that the examples given herein are for illustration only and are not intended to limit the scope of the present invention.
Fig. 1A is a schematic circuit configuration of a quantum tunable coupler according to an embodiment of the present invention. The quantum tunable coupler takes the form of an xmon comprising a capacitance 101 and a josephson junction 102 connected in parallel. The capacitance 101 comprises a first pole 101a connected to a first pole 102a of the josephson junction 102; and a second diode 101b connected together with the second diode 102b of the josephson junction 102 and connected to Ground (GND). Fig. 1B is a top view of the process structure of the quantum tunable coupler of fig. 1A, and fig. 1C is a cross-sectional view along the dashed line MM' in fig. 1B. As shown in fig. 1B and 1C, the first pole 101a of the capacitor 101 is connected to the first pole 102a of the josephson junction 102, the second pole 101B of the capacitor 101 is GND, and the dielectric layer of the capacitor 101 is an air layer. The second pole 102b of the josephson junction 102 is grounded and the josephson junction 102 further comprises an insulating layer 102c.
It should be noted that the circuit configuration of the xmon-type tunable coupler of fig. 1A-1C is merely an exemplary simplified configuration, and may be implemented as desired in practiceThe circuit structure using other xmon forms, such as the josephson junction in fig. 1A, may be a squid double junction, or the capacitor 101 may take other capacitive forms (e.g., a form in which two capacitors are connected in parallel). The quantum tunable coupler in xmon form should satisfy the tunneling energy E of its josephson junction J And capacitance energy E C The ratio of (2) is 10-10 3 Within the range of (1), the inductance energy E of its linear inductance L Tunneling energy E with Josephson junction J Is 0 and the josephson junction is grounded. In practical applications, the circuit structure of the tunable coupler in the form of xmon can be selected appropriately according to the above constraint conditions.
Fig. 2A is a schematic circuit configuration of a qubit according to an embodiment of the present invention. The qubits take the form of transmon, which includes capacitances 201, 202, 204 and josephson junctions 203. The capacitance 201 comprises a first pole 201a connected to a first pole 203a of the josephson junction 203 and to a first pole 202a of the capacitance 202; a second pole 201b connected to ground. The second pole 203b of the josephson junction 203 and the second pole 202b of the capacitor 202 are connected and commonly connected to the first pole 204a of the capacitor 204, the second pole 204b of the capacitor 204 being connected to ground. In the qubit in transmon form, the josephson junction 203 is not grounded.
Fig. 2B is a top view of the process structure of the qubit of fig. 2A, and fig. 2C is a cross-sectional view along the dashed line NN' in fig. 2B. As shown in fig. 2B and 2C, the first pole 201a of the capacitor 201 is connected to the first pole 203a of the josephson junction 203, the second pole 201B of the capacitor 201 is GND, and the dielectric layer of the capacitor 201 is an air layer. The second pole 203b of the josephson junction 203 is connected to the first pole 204a of the capacitor 204, the josephson junction 203 further comprising an insulating layer 203c. The second pole 204b of the capacitor 204 is GND, the first pole 201a of the capacitor 201 and the first pole 204a of the capacitor 204 form the capacitor 202, i.e. the first pole 201a of the capacitor 201 forms the first pole 202a of the capacitor 202, and the first pole 204a of the capacitor 204 forms the second pole 202b of the capacitor 202.
It should be noted that the circuit configuration of the quantum bits in the form of tranmons in fig. 2A-2C is merely exemplary, and that other circuit configurations of the quantum bits in the form of tranmons, such as joseph in fig. 2A, may be employed as desired in practical applicationsThe Fussen junction may be a two-junction, or the capacitors 201/204 may take other forms of capacitance (e.g., two capacitors in parallel). the qubit in the form of a transmon should satisfy the tunneling energy E of its josephson junction J And capacitance energy E C The ratio of (2) is 10-10 3 Within the range of (1), the inductance energy E of its linear inductance L Tunneling energy E with Josephson junction J Is 0 and the josephson junction is not grounded. In practical applications, a suitable circuit structure of the qubit in the form of transmon may be selected according to the above constraint.
Fig. 3A is a schematic diagram of a qubit structure with tunable coupling strength according to one embodiment of the invention. The quantum bit structure with adjustable coupling strength comprises a first quantum bit Q1, a quantum adjustable coupler Qc and a second quantum bit Q2, wherein the quantum adjustable coupler Qc adopts an xmon form, and the first quantum bit Q1 and the second quantum bit Q2 adopt a transmon form. The first qubit Q1 comprises a capacitance 301 (comprising a first pole 301a and a second pole 301 b), a capacitance 302 (comprising a first pole 302a and a second pole 302 b), a capacitance 304 (comprising a first pole 304a and a second pole 304 b) and a josephson junction 303 (comprising a first pole 303a and a second pole 303 b). Quantum tunable coupler Qc includes capacitor 305 (including first pole 305a and second pole 305 b) and josephson junction 306 (including first pole 306a and second pole 306 b). The second qubit Q2 comprises a capacitance 307 (comprising a first pole 307a and a second pole 307 b), a capacitance 308 (comprising a first pole 308a and a second pole 308 b), a capacitance 310 (comprising a first pole 310a and a second pole 310 b) and a josephson junction 309 (comprising a first pole 309a and a second pole 309 b). The specific connection relationships are the same as those of the tunable coupler and the qubit described in fig. 1A to 2C, and are not described here again. As shown in fig. 3A, the first qubit Q1, the quantum tunable coupler Qc, and the second qubit Q2 are capacitively coupled together, with the quantum tunable coupler Qc being located between the first qubit Q1 and the second qubit Q2. By changing the bias current of the quantum tunable coupler Qc, the coupling strength between the first and second qubits Q1 and Q2 can be changed, so that the coupling size between the qubits can be completely turned off or arbitrarily adjusted.
Fig. 3B is a top view of the process structure of the tunable coupling strength qubit structure of fig. 3A. The coupling capacitance value between the first qubit Q1, the quantum tunable coupler Qc, and the second qubit Q2 can be changed by changing their shapes and the distance therebetween. The size and shape of the capacitor plates 301a, 304a, 305a, 307a and 310a can be adjusted to obtain the final desired adjustable coupling range between Q1 and Q2 by adjusting the size and shape of the capacitor plates 301a, 304a, 305a, 307a, 310a, the spacing between the capacitor plates 301a and 304a, the spacing between the capacitor plates 307a and 310a, and the current on the josephson junctions 303, 306, 309. In the present invention, the size and shape of the capacitor plates 301a, 304a, 305a, 307a, and 310a are not limited.
The first qubit Q1, the quantum tunable coupler Qc and the second qubit Q2 may be capacitively coupled with or without a ground isolation. For example, as shown in fig. 3B, the portion where GND exists between the first qubit Q1 and the quantum tunable coupler Qc is capacitive coupling with ground isolation. If there is no GND portion between the first qubit Q1 and the quantum tunable coupler Qc, namely, direct capacitive coupling without ground can make the area of the quantum bit structure with tunable coupling strength smaller.
The quantum bit structure with adjustable coupling strength adopts a trans-mon-xmon form, and compared with the existing xmon-xmon-xmon form, the quantum bit structure with adjustable coupling strength can more easily increase the area between quantum bits through branch expansion. The following is a detailed description with reference to fig. 4. Fig. 4 is a top view of a process structure with branched, coupling strength tunable qubit structures. Where a branch (e.g., branch 401) is connected to the capacitive plates of the first qubit Q1 and the second qubit Q2, it will be appreciated by those skilled in the art that the longer the branch 401, the greater the corresponding capacitance. Typically, the capacitance of the qubit to ground is fixed, in fig. 1A the capacitance cx=c in the form of xmon in the qubit 101 In FIG. 2A, the capacitance in a qubit in the form of a transmonWherein C is 202 Far less than C 201 And C 204 For example about C 201 And C 204 One tenth of a conventional one. For ease of understanding, assume C 201 =C 204 At this time->Thus when the capacitance of the qubit to ground cx=ct, the qubit in transmon form can use a larger capacitance C 201 Thus in a qubit in the form of a transmon, a longer branching structure is obtained, so that the qubit and the area between the qubits is larger.
In one embodiment of the present invention, the capacitance to ground of the first qubit Q1 and the second qubit Q2 is 80ff, and the Q1 and Q2 extend out of 4 branches, respectively, and can be extended in four directions. The capacitance to ground of Qc is 70fF. The coupling capacitance between Q1 and Qc is 80fF, the coupling capacitance between Q1 and Q2 is 8fF, and the coupling capacitance between Q2 and Qc is 80fF. The coupling between Q1 and Q2 can be made to range from 5MHz to-40 Hz by varying the bias current of Qc.
In the quantum bit structure with adjustable coupling strength, the first quantum bit Q1 and the second quantum bit Q2 can have no branches or multiple branches, and each branch can be coupled to other quantum bits through an adjustable coupler so as to continue to expand outwards. The coupling strength tunable qubit structure of the present invention can be extended in multiple directions (depending on the outwardly extending branches of the qubit based transmon design) and coupled with each other tunable.
In the quantum bit structure with adjustable coupling strength, the substrate can be sapphire, silicon and the like. A superconducting metal layer, which may be, for example, al, nb, ta, or the like, may be plated on the substrate to serve as the ground layer GND. Materials for preparing the capacitor and the Josephson junction include Al, nb, ta and the like.
In the quantum bit structure with adjustable coupling strength, the first quantum bit Q1, the second quantum bit Q2 and the quantum adjustable coupler Qc can be coplanar, namely, exist on one substrate together; it may also be non-coplanar, i.e. not on one substrate, e.g. the first qubit Q1 on substrate a, the second qubit Q2 and the quantum tunable coupler Qc on the other substrate B, and then the substrates a and B are brought into face-to-face proximity but not contact, such that capacitive coupling is still present between the first qubit Q1, the second qubit Q2 and the quantum tunable coupler Qc. In this way, the first qubit Q1, the second qubit Q2, and the quantum tunable coupler Qc can be manufactured more conveniently and separately, increasing the success rate.
In the quantum bit structure with adjustable coupling strength, the first quantum bit Q1, the second quantum bit Q2 and the Josephson junction in the quantum adjustable coupler Qc can be single junction or double junction with required (namely, the Josephson junctions are connected in parallel).
The quantum bit structure with adjustable coupling strength adopts a form of trans-mon-xmon-trans-mon, and the quantum adjustable coupling chip prepared by adopting the design can randomly adjust the areas of the first quantum bit Q1 and the second quantum bit Q2 and can adjust the coupling value between the quantum bits. the design of the trans-xmon-trans forms makes the distance between the qubits larger and easier to route in the design of the three-dimensional quantum chip, and reduces the mutual interference between the qubits. The josephson junction in the qubit is not grounded, noise and crosstalk are reduced, and the energy relaxation time is increased, so that the measurement is more convenient.
While the invention has been described in terms of preferred embodiments, the invention is not limited to the embodiments described herein, but encompasses various changes and modifications that may be made without departing from the scope of the invention.

Claims (7)

1. A qubit structure with adjustable coupling strength, comprising: a first qubit, a second qubit, and an adjustable coupler between the first qubit and the second qubit;
the first qubit and the second qubit are respectively capacitively coupled to the tunable coupler, and the tunable coupler controls a coupling coefficient between the first qubit and the second qubit; and
wherein the first and second qubits are in the form of transmon and the tunable coupler is in the form of xmon;
wherein the adjustable coupler comprises:
a first capacitor including a first pole and a second pole; and
a first josephson junction comprising a first pole connected to a first pole of the first capacitance; and a second pole connected to the second pole of the first capacitor and to ground;
the first qubit comprises a second capacitor, a third capacitor, a second Josephson junction and a fourth capacitor, wherein the second electrode of the second capacitor is grounded, and the first electrode of the second capacitor is connected with the first electrode of the third capacitor and the first electrode of the second Josephson junction; the second pole of the third capacitor and the second pole of the second josephson junction are connected to the first pole of a fourth capacitor, the second pole of the fourth capacitor being grounded;
the second qubit comprises a fifth capacitor, a sixth capacitor, a third Josephson junction and a seventh capacitor, wherein a second electrode of the fifth capacitor is grounded, and a first electrode of the fifth capacitor is connected with a first electrode of the sixth capacitor and a first electrode of the third Josephson junction; the second pole of the sixth capacitance and the second pole of the third josephson junction are connected and connected to the first pole of a seventh capacitance, the second pole of the seventh capacitance being grounded.
2. The tunable coupling strength qubit structure of claim 1, wherein at least one of the first and second qubits comprises a branching structure.
3. The coupling strength adjustable qubit structure of claim 2, wherein the branching structure is coupled to the adjustable coupler.
4. The adjustable coupling strength qubit structure of claim 1, wherein the first, second, and third josephson junctions are squid double junctions.
5. The tunable coupling strength qubit structure of claim 1, wherein the first qubit, the second qubit, and the tunable coupler are not on the same substrate.
6. The adjustable coupling strength qubit structure of claim 1, wherein a first pole of the second capacitance comprises a first pole of the third capacitance and a first pole of the fourth capacitance comprises a second pole of the third capacitance;
the first pole of the fifth capacitor forms the first pole of the sixth capacitor and the first pole of the seventh capacitor forms the second pole of the sixth capacitor.
7. The tunable coupling strength qubit structure of claim 1, wherein the first qubit, the second qubit, and the tunable coupler are capacitively coupled with or without direct capacitive coupling with a local isolation.
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