CN113690280B - Array substrate repairing method and array substrate - Google Patents

Array substrate repairing method and array substrate Download PDF

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Publication number
CN113690280B
CN113690280B CN202110917485.0A CN202110917485A CN113690280B CN 113690280 B CN113690280 B CN 113690280B CN 202110917485 A CN202110917485 A CN 202110917485A CN 113690280 B CN113690280 B CN 113690280B
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layer
anode layer
array substrate
electrostatic adsorption
repairing
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CN113690280A (en
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申郑
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]

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  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The application provides a repair method of an array substrate and the array substrate. The repair method of the array substrate comprises the following steps: providing an array substrate, wherein the array substrate comprises a substrate, a driving circuit layer and an anode layer which are sequentially stacked, and the anode layer comprises a region to be repaired; providing an electrostatic adsorption layer, wherein the electrostatic adsorption layer is positioned on one side of the anode layer; applying a positive voltage to the anode layer and a negative voltage to the electrostatic adsorption layer; and repairing the area to be repaired of the anode layer by adopting laser to penetrate through the electrostatic adsorption layer. The method for repairing the array substrate provided by the application is used for repairing the area to be repaired of the anode layer, particles generated in the repairing process are repelled by the anode layer due to positively charged property, and are adsorbed to the surface of the electrostatic adsorption layer facing the anode layer by the electrostatic adsorption layer with negatively charged property, so that the particles are prevented from falling into a normal pixel area, and the anode layer and the cathode layer of the display panel which are prepared later are short-circuited.

Description

Array substrate repairing method and array substrate
Technical Field
The application relates to the field of display, in particular to a repair method of an array substrate and the array substrate.
Background
An Active Matrix Organic Light Emitting Diode (AMOLED) display technology controls the light emitting state of self-luminous pixels through a thin film transistor (Thin Film Transistor, TFT) circuit, thereby realizing the switching of different pictures. And one AMOLED display panel has self-luminous pixels on the order of millions or even tens of millions. In the manufacturing process of the panel, there are some pixels having the anode layer with protrusions or the anode layer connected with each other due to the process level problem. These abnormal pixels need to be repaired to normal pixels by repair means. Particles are generated in the process of repairing the anode layer of the array substrate, and the generated particles are scattered to a normal pixel area, so that the cathode layer and the anode layer of the display panel which are manufactured later are short-circuited.
Disclosure of Invention
The application provides a repair method of an array substrate and the array substrate, which are used for preventing particles generated in the repair process from scattering to a normal pixel area, so that the anode layer and the cathode layer of a display panel which are prepared later are short-circuited.
A repair method of an array substrate comprises the following steps:
providing an array substrate, wherein the array substrate comprises a substrate, a driving circuit layer and an anode layer which are sequentially stacked, and the anode layer comprises a region to be repaired;
providing an electrostatic adsorption layer, wherein the electrostatic adsorption layer is positioned on one side of the anode layer;
applying a positive voltage to the anode layer and a negative voltage to the electrostatic adsorption layer;
and repairing the area to be repaired of the anode layer by adopting laser to penetrate through the electrostatic adsorption layer.
In some embodiments, the array substrate further includes a pixel definition layer on the anode layer, the pixel definition layer including a pixel opening exposing the anode layer.
In some embodiments, the array substrate further includes a connection portion connected with the anode layer.
In some embodiments, the electrostatic adsorption layer includes an insulating film and a conductive film that are stacked, the insulating film being located on a side near the anode layer, and the conductive film being located on a side near the laser.
In some embodiments, the insulating film has a thickness of 50 nm to 100 nm, and the conductive film has a thickness of 5 nm to 50 nm.
In some embodiments, the electrostatic adsorption layer is at a distance of 1 millimeter to 2 millimeters from the anode layer.
In some embodiments, the electrostatic chuck layer has a light transmittance of greater than 80%.
In some embodiments, the orthographic projection of the electrostatic adsorption layer on the substrate covers the orthographic projection of the region to be repaired of the anode layer on the substrate.
In some embodiments, the power source for applying a voltage to the anode layer and the electrostatic adsorption layer is a direct current power source, and the applied voltage has a voltage value of 5 volts to 50 volts.
In some embodiments, the laser has a wavelength of 950 nanometers to 1200 nanometers and an energy of 2 megajoules to 6 megajoules.
The application further provides an array substrate which comprises a substrate, a driving circuit layer and an anode layer which are sequentially stacked, and the array substrate further comprises a connecting part which is connected with the anode layer.
The application provides a repair method of an array substrate and the array substrate. The repair method of the array substrate comprises the following steps: providing an array substrate, wherein the array substrate comprises a substrate, a driving circuit layer and an anode layer which are sequentially stacked, and the anode layer comprises a region to be repaired; providing an electrostatic adsorption layer, wherein the electrostatic adsorption layer is positioned on one side of the anode layer; applying a positive voltage to the anode layer and a negative voltage to the electrostatic adsorption layer; and repairing the area to be repaired of the anode layer by adopting laser to penetrate through the electrostatic adsorption layer. The method for repairing the array substrate provided by the application is used for repairing the area to be repaired of the anode layer, particles generated in the repairing process are repelled by the anode layer due to positively charged property, and are adsorbed to the surface of the electrostatic adsorption layer facing the anode layer by the electrostatic adsorption layer with negatively charged property, so that the particles are prevented from falling into a normal pixel area, and the anode layer and the cathode layer of the display panel which are prepared later are short-circuited.
Drawings
In order to more clearly illustrate the technical solutions of the present application, the drawings that are needed in the description of the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic plan view of an array substrate according to an embodiment of the present application.
Fig. 2 is a cross-sectional view of an array substrate along line AA' according to an embodiment of the present application.
Fig. 3 is a view illustrating a conventional repair method for an array substrate.
Fig. 4 is a schematic diagram of shorting an anode layer and a cathode layer of a display panel after repairing an array substrate by using a conventional repairing method of the array substrate.
Fig. 5 is a flowchart of a method for repairing an array substrate according to an embodiment of the present application.
Fig. 6 is a scene diagram of repairing an array substrate by using the repairing method of the array substrate provided by the embodiment of the application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. It will be apparent that the described embodiments are only some, but not all, embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to fall within the scope of the application.
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. It should be noted that in embodiments of the present application, it is understood that terms such as "comprises" or "comprising," etc., are intended to indicate the presence of features, numbers, steps, acts, components, portions, or combinations thereof disclosed in the present specification, and are not intended to exclude the possibility that one or more other features, numbers, steps, acts, components, portions, or combinations thereof are present or added. In various embodiments of the present application, it should be understood that the sequence numbers of the following processes do not mean the order of execution, and the order of execution of the processes should be determined by the functions and internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present application.
Referring to fig. 1-2, fig. 1 is a schematic plan view of an array substrate according to an embodiment of the application. Fig. 2 is a cross-sectional view of an array substrate along line AA' according to an embodiment of the present application.
The array substrate 100 includes a display region 100a and a peripheral region 100b. The array substrate 100 includes a substrate 10, a driving circuit layer 20, and an anode layer 30, which are sequentially stacked. The anode layer 30 includes a region to be repaired 30a. The region 30a of the anode layer 30 to be repaired may be an anode protrusion formed incompletely by etching or a short circuit point caused by the connection of the anode layer 30 between adjacent pixels. The present application is not limited to the present application, taking the region 30a to be repaired of the anode layer 30 as an anode protrusion.
The substrate 10 may be a flexible substrate or a glass substrate. The material of the substrate 10 is not limited in the present application. The driving circuit layer 20 includes a plurality of thin film transistors 21. The thin film transistor 21 includes an active layer 211, a gate insulating layer 212, a gate electrode 213, an interlayer dielectric layer 214, a source electrode 2151, a drain electrode 2152, and a passivation layer 216. The anode layer 30 is connected to the source 2151 of the thin film transistor 21.
The active layer 211 may be formed of one or more of Indium Gallium Zinc Oxide (IGZO), indium Gallium Zinc Tin Oxide (IGZTO), or Indium Gallium Tin Oxide (IGTO). The gate insulating layer 212 may be made of SiO X Or SiO X /SiN X Is formed of a laminate of (a) and (b). The gate electrode 213 may be formed of one or more of molybdenum (Mo), titanium (Ti), aluminum (Al), or copper (Cu). The interlayer dielectric layer 214 may be made of silicon oxide (SiO X ) Silicon nitride (SiN) X ) Or silicon oxide (SiO) X ) Silicon nitride (SiN) X ) Is formed of a laminate of (a) and (b). The source and drain electrodes 2151 and 2152 may be formed of one or more of molybdenum (Mo), titanium (Ti), aluminum (Al), or copper (Cu). Passivation layer 216 may be made of SiO X Or SiO X /SiN X Is formed of a laminate of (a) and (b). The passivation layer 216 may be formed by chemical vapor deposition. The anode layer 30 may be formed of indium tin oxide/silver/indium tin oxide or a silver aluminum alloy. The anode layer 30 may be formed by physical vapor deposition or magnetron sputtering.
In some embodiments, the array substrate 100 may further include a pixel definition layer 40. The pixel defining layer 40 is located on the anode layer 30. The pixel defining layer 40 includes a pixel opening 41 exposing the anode layer 30.
The pixel defining layer 40 may be formed by an inkjet printing process or chemical vapor deposition. The pixel defining layer 40 may be formed of acryl, epoxy, or polyimide organic photoresist.
In some embodiments, the array substrate 100 may further include a connection 2153. The connection portion 2153 is connected to the anode layer 30.
The connection portion 2153 is located in the peripheral region 100b of the array substrate 100. The connection portion 2153 is provided in the same layer as the source 2151 and the drain 2152 of the thin film transistor 21, and can be used for external power. In the present application, the connection 2153 is externally connected to a power source for charging the anode layer 30.
In some embodiments, the array substrate 100 may further include a light shielding layer 50. The light shielding layer 50 is disposed between the substrate 10 and the driving circuit layer 20. Specifically, the light shielding layer 50 is provided corresponding to the active layer 211 of the thin film transistor 21. The orthographic projection of the light shielding layer 50 on the substrate 10 covers the orthographic projection of the active layer 211 on the substrate 10.
The light shielding layer 50 may be formed of a stacked metal of molybdenum (Mo) or molybdenum (Mo)/copper (Cu). The light shielding layer 50 may be formed by physical vapor deposition.
The application can prevent the influence of external light on the thin film transistor 21 by arranging the shading layer 50, and avoid negative drift of the threshold voltage of the thin film transistor 21, thereby improving the stability of the array substrate 100.
In some embodiments, the array substrate 100 may further include a buffer layer 60. The buffer layer 60 covers the light shielding layer 50.
Buffer layer 60 may be made of SiO X Or SiO X /SiN X Is formed of a laminate of (a) and (b). The buffer layer 60 may be formed by chemical vapor deposition.
The buffer layer 60 is provided to enhance the bending strength of the array substrate 100 and to buffer bending stress.
In some embodiments, the array substrate 100 may further include a planarization layer 70, the planarization layer 70 being located between the driving circuit layer 20 and the anode layer 30. The anode layer 30 is connected to the source 2151 of the thin film transistor 21 through the planarizing layer 70.
The planarization layer 70 may be formed of an organic photoresist material. Specifically, the planarization layer 70 may be formed of one or more of organic materials such as acrylic resin (AA), epoxy resin (EP), phenolic resin (PF), polyamide resin (PA), polyimide (PI), and the like.
According to the application, the planarization layer 70 is arranged between the driving circuit layer 20 and the anode layer 30, so that the flatness of the driving circuit layer 20 can be improved, the subsequent preparation of the light-emitting structure layer is facilitated, and the product yield of the display panel is further improved.
Referring to fig. 3-4, fig. 3 is a schematic diagram illustrating a repair method for repairing an array substrate according to the prior art. Fig. 4 is a schematic diagram of shorting an anode layer and a cathode layer of a display panel after repairing an array substrate by using a conventional repairing method of the array substrate.
As can be seen from fig. 3 to 4, particles 31 are generated during the repair of the to-be-repaired area 30a of the anode layer 30 of the array substrate 100 by the laser 301 emitted by the laser 300, and the particles 31 are scattered to the normal pixel area of the display panel 1000, so that the anode layer 30 and the cathode layer 80 of the display panel 1000 are shorted, and a dark spot appears in the normal pixel area of the display panel 1000.
Referring to fig. 5-6, fig. 5 is a flowchart of a method for repairing an array substrate according to an embodiment of the application. Fig. 6 is a scene diagram of repairing an array substrate by using the repairing method of the array substrate provided by the embodiment of the application.
The application provides a repair method of an array substrate, which comprises the following steps:
step B10: an array substrate is provided, the array substrate comprises a substrate, a driving circuit layer and an anode layer which are sequentially stacked, and the anode layer comprises an area to be repaired.
The array substrate 100 provided in the present application is as described above, and will not be described herein.
Step B20: an electrostatic adsorption layer is provided, and the electrostatic adsorption layer is positioned on one side of the anode layer.
As shown in fig. 5, the electrostatic adsorption layer 200 includes an insulating film 201 and a conductive film 202 which are stacked.
Among them, the insulating film 201 may be formed of one or more of polyethylene terephthalate (PET), cyclic Olefin Polymer (COP), or ultra-thin glass (UTG). The conductive film 202 may be formed of one or both of indium tin oxide or magnesium silver alloy. The conductive film 202 may be formed by physical magnetron sputtering or evaporation.
The ultra-thin glass is a glass having a thickness of 1500 μm or less, which is generally referred to as ultra-thin glass, compared to the thickness of ordinary glass. Among them, ultra-thin glass having a thickness of less than 500 μm has good flexibility. Ultrathin glass with a thickness of less than 100 microns has a bendable property and may also be referred to as flexible glass.
In some embodiments, the thickness of the insulating film 201 is 50 nm to 100 nm. The thickness of the conductive film 202 is 5 nm to 50 nm. Specifically, the thickness of the insulating film 201 may be 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, or 100 nm. The thickness of the conductive film 202 is 5 nm to 50 nm. Specifically, the thickness of the conductive film 202 may be 5 nm, 15 nm, 25 nm, 35 nm, 45 nm, or 50 nm.
When the thickness of the insulating film 201 is too thick, the electrostatic adsorption layer 200 cannot achieve adsorption of the particles 31 generated during repair. In addition, the thicknesses of the insulating film 201 and the conductive film 202 together determine the light transmittance of the laser light 301 emitted from the laser 300 through the electrostatic adsorption layer 200. While the light transmittance of the laser 301 determines the repair effect on the area 30a to be repaired of the anode layer 30. The present application thus provides a thickness of 50 nm to 100 nm by controlling the thickness of the insulating film 201. The thickness of the conductive film 202 is 5 nm to 50 nm to ensure that the electrostatic adsorption layer 200 has a good adsorption effect on the particles 31 generated in the repair process, and also to ensure that the laser 301 can achieve the maximum transmittance.
In some embodiments, the light transmittance of the electrostatic chuck layer 200 is greater than 80%.
The application ensures that the light transmittance of the laser 301 can repair the area 30a to be repaired of the anode layer 30 and has good repair effect by setting the light transmittance of the electrostatic adsorption layer 200 to be greater than 80%.
Referring to fig. 6, the electrostatic adsorption layer 200 is disposed between the array substrate 100 and the laser 300. Wherein the insulating film 201 is located at one side of the anode layer 30. The conductive film 202 is located on one side of the laser 300.
When a negative voltage is applied to the electrostatic adsorption layer 200, the conductive film 202 serves to accumulate charges and adsorb positively charged particles 31 generated during repair. The insulating film 201 prevents the adsorbed positively charged particles 31 from being neutralized with the negatively charged conductive film 202 and scattering into the normal pixel region.
According to the application, the electrostatic adsorption layer 200 is arranged between the array substrate 100 and the laser 300, when laser 301 emitted by the laser 300 passes through the electrostatic adsorption layer 200 to repair the to-be-repaired area 30a of the anode layer 30, some positively charged particles 31 are generated, and the electrostatic adsorption layer 200 can adsorb the positively charged particles 31 generated in the repair process by utilizing the electrostatic adsorption principle, so that the particles 31 are prevented from falling into a normal pixel area, and the anode layer and the cathode layer of the display panel are prevented from being shorted, so that the pixel area of the display panel after repair can be normally displayed.
In some embodiments, the distance D1 of the electrostatic adsorption layer 200 from the region 30a to be repaired of the anode layer 30 is 1 mm to 2 mm. Specifically, the distance D1 of the electrostatic adsorption layer 200 from the region 30a to be repaired of the anode layer 30 may be 1 mm, 1.5 mm, or 2 mm.
In some embodiments, the distance D2 of the electrostatic chuck 200 from the laser 300 is 1 mm to 2 mm. Specifically, the distance D2 of the electrostatic adsorption layer 200 from the laser 300 may be 1 mm, 1.5 mm, or 2 mm. The area 30a of the anode layer 30 to be repaired is located at the focal length of the laser 301 or at a position of plus or minus 0.5 mm from the plane of the focal length of the laser 301.
The laser 301 is used to remove the anode protrusion of the to-be-repaired area 30a of the anode layer 30 to achieve repair of the to-be-repaired area 30a of the anode layer 30. When the distance of the laser 300 from the region to be repaired 30a of the anode layer 30 is too large, repair of the region to be repaired 30a of the anode layer 30 cannot be achieved. The present application can adsorb the positively charged particles 31 generated during the repair process by providing the electrostatic adsorption layer 200 between the array substrate 100 and the laser 300. When the distance of the electrostatic adsorption layer 200 from the anode layer 30 is too large, the electrostatic adsorption layer 200 cannot adsorb the positively charged particles 31 generated during the repair process. Therefore, the present application realizes the repair of the to-be-repaired area 30a of the anode layer 30 by controlling the distance D1 of the electrostatic adsorption layer 200 from the laser 300 to be 1 mm to 2 mm and the distance D2 of the electrostatic adsorption layer 200 from the to-be-repaired area 30a of the anode layer 30 to be 1 mm to 2 mm.
In some embodiments, the orthographic projection of the electrostatic adsorption layer 200 onto the substrate 10 covers the orthographic projection of the region 30a to be repaired of the anode layer 30 onto the substrate 10.
The electrostatic adsorption layer 200 is used to adsorb the positively charged particles 31 generated during the repair process. Thus, the orthographic projection of the region 30a to be repaired of the anode layer 30 on the substrate 10 is covered by the orthographic projection of the electrostatic adsorption layer 200 on the substrate 10. That is, the area of the electrostatic adsorption layer 200 is larger than the area of the to-be-repaired area 30a of the anode layer 30, so that when the laser 301 repairs the to-be-repaired area 30a of the anode layer 30, all the positively charged particles 31 generated in the repair process can be adsorbed onto the electrostatic adsorption layer 200, thereby avoiding that the positively charged particles 31 generated in the repair process fall into a normal pixel area, so that the anode layer and the cathode layer of the display panel are shorted, and all the pixel areas of the display panel after repair can be normally displayed.
Step B30: a positive voltage is applied to the anode layer and a negative voltage is applied to the electrostatic adsorption layer.
The positive electrode of the power supply 400 is connected to the connection portion 2153 of the array substrate 100; the negative electrode of the power supply 400 is connected to the conductive film 202 of the electrostatic adsorption layer 200, so that a positive voltage is applied to the anode layer 30 and a negative voltage is applied to the electrostatic adsorption layer 200.
In some embodiments, the power supply 400 that applies a voltage to the anode layer 30 and the electrostatic chuck layer 200 is a direct current power supply, and the applied voltage has a value of 5 volts to 50 volts. In particular, the applied voltage value is 5 volts, 15 volts, 25 volts, 35 volts, 45 volts or 50 volts.
The present application makes the particles 31 generated during repair positive by applying a positive voltage to the anode layer 30. Negative voltage is applied to the conductive film 202 to ensure that the positively charged particles 31 generated during the repair process can be adsorbed onto the insulating film 201 of the electrostatic adsorption layer 200 under the electrostatic action.
The present application ensures that the anode layer 30 has positive electricity all the time and the electrostatic adsorption layer 200 has negative electricity all the time by setting the power supply 400 for applying voltage to the anode layer 30 and the electrostatic adsorption layer 200 to be a direct current power supply. And by controlling the voltage value of the voltage applied to the anode layer 30 and the electrostatic adsorption layer 200 to be 5 v to 50 v, the adsorption force between the electrostatic adsorption layer 200 and the positively charged particles 31 is ensured not to easily fall off the positively charged particles 31 from the electrostatic adsorption layer 200 to a normal pixel region.
Step B40: and repairing the area to be repaired of the anode layer by adopting laser to penetrate through the electrostatic adsorption layer.
The laser 301 emitted by the laser 300 is used to repair the area 30a to be repaired of the anode layer 30 through the electrostatic adsorption layer 200. The area 30a of the anode layer 30 to be repaired is located at the focal length of the laser 301 or at a position of plus or minus 0.5 mm from the plane of the focal length of the laser 301. Since the plane where the electrostatic adsorption layer 200 is located does not belong to the position where the focal length of the laser 301 is located, when the laser 301 passes through the electrostatic adsorption layer 200 to repair the to-be-repaired region 30a of the anode layer 30, damage to the electrostatic adsorption layer 200 is not caused.
In some embodiments, the laser 301 has a wavelength of 950 nanometers to 1200 nanometers. The laser 301 energy is 2 megajoules to 6 megajoules. Specifically, the wavelength of the laser may be 950 nm, 1000 nm, 1064 nm, 1100 nm, 1150 nm, or 1200 nm. The energy of the laser may be 2 megajoules, 3 megajoules, 4 megajoules, 5 megajoules, or 6 megajoules.
When the energy of the laser 301 is excessively large, normal pixels around the region 30a to be repaired of the anode layer 30 may be damaged. When the energy of the laser 301 is too small, the anode protrusion in the region 30a to be repaired of the anode layer 30 cannot be removed, and repair of the region 30a to be repaired of the anode layer 30 cannot be completed. Therefore, the application can improve the success rate of repairing and further improve the yield of the display panel by repairing the region 30a to be repaired of the anode layer 30 through the electrostatic adsorption layer 200 by using the laser 301 with the wavelength of 950-1200 nm and the energy of 2-6 megajoules.
In some embodiments, repairing the to-be-repaired region 30a of the anode layer with the laser-light transmissive electrostatic chuck layer may further include:
step B50: and positioning a region to be repaired of the anode layer.
The area 30a of the anode layer 30 to be repaired may be positioned by photographing with a charge coupled device (Charge Coupled Device, CCD) or by detecting an electrical signal. Specifically, whether or not there is an abnormality in each anode layer 30 may be judged by an Array substrate Test (Array Test), thereby locating the area 30a of the anode layer 30 to be repaired.
Before repairing the to-be-repaired area 30a of the anode layer 30 by using the laser 301 through the electrostatic adsorption layer 200, the to-be-repaired area 30a of the anode layer 30 is positioned, so that the repair of the to-be-repaired area 30a of the anode layer 30 can be accurately and rapidly completed later.
The application provides a repair method of an array substrate, which comprises the following steps: an array substrate is provided, the array substrate comprises a substrate, a driving circuit layer and an anode layer which are sequentially stacked, and the anode layer comprises an area to be repaired. An electrostatic adsorption layer is provided, and the electrostatic adsorption layer is positioned at one side of the anode layer. A positive voltage is applied to the anode layer and a negative voltage is applied to the electrostatic adsorption layer. And repairing the area to be repaired of the anode layer by adopting laser to penetrate through the electrostatic adsorption layer. The method for repairing the array substrate provided by the application is used for repairing the to-be-repaired area of the anode layer, particles generated in the repairing process are repelled by the anode layer due to positively charged property, and are adsorbed to the surface of the electrostatic adsorption layer facing the anode layer by the electrostatic adsorption layer with negatively charged property, so that the particles are prevented from falling into a normal pixel area, and the anode layer and the cathode layer of the display panel are prevented from being shorted.
In summary, although the detailed description of the embodiments of the present application is given above, the above embodiments are not intended to limit the present application, and those skilled in the art will understand that: the technical scheme described in the foregoing embodiments can be modified or some of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the technical solutions according to the embodiments of the present application.

Claims (8)

1. The repair method of the array substrate is characterized by comprising the following steps of:
providing an array substrate, wherein the array substrate comprises a substrate, a driving circuit layer and an anode layer which are sequentially stacked, and the anode layer comprises a region to be repaired;
providing an electrostatic adsorption layer, wherein the electrostatic adsorption layer is positioned on one side of the anode layer;
applying a positive voltage to the anode layer and a negative voltage to the electrostatic adsorption layer;
repairing the to-be-repaired area of the anode layer by adopting laser to penetrate through the electrostatic adsorption layer;
the electrostatic adsorption layer comprises an insulating film and a conductive film which are stacked, the insulating film is positioned at one side close to the anode layer, and the conductive film is positioned at one side close to the laser;
the thickness of the insulating film is 50 nm to 100 nm, and the thickness of the conductive film is 5 nm to 50 nm.
2. The method of claim 1, further comprising a pixel definition layer on the anode layer, the pixel definition layer including a pixel opening exposing the anode layer.
3. The method of repairing an array substrate according to claim 1, further comprising a connection portion connected to the anode layer.
4. The method of repairing an array substrate according to claim 1, wherein the electrostatic adsorption layer is spaced from the anode layer by a distance of 1 mm to 2 mm.
5. The method of repairing an array substrate according to claim 1, wherein the light transmittance of the electrostatic adsorption layer is greater than 80%.
6. The method for repairing an array substrate according to claim 1, wherein the orthographic projection of the electrostatic adsorption layer on the substrate covers the orthographic projection of the area to be repaired of the anode layer on the substrate.
7. The method according to claim 1, wherein the power source for applying a voltage to the anode layer and the electrostatic adsorption layer is a direct current power source, and the applied voltage has a voltage value of 5 to 50 v.
8. The method for repairing an array substrate according to claim 1, wherein the wavelength of the laser is 950 nm to 1200 nm, and the energy of the laser is 2 megajoules to 6 megajoules.
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