CN113687551A - Based on phase change material Ge2Sb2Te5Mach-Zehnder interference nonvolatile multistage optical switch and preparation method thereof - Google Patents
Based on phase change material Ge2Sb2Te5Mach-Zehnder interference nonvolatile multistage optical switch and preparation method thereof Download PDFInfo
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/011—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour in optical waveguides, not otherwise provided for in this subclass
- G02F1/0115—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour in optical waveguides, not otherwise provided for in this subclass in optical fibres
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Abstract
The invention provides a phase-change material Ge-based material2Sb2Te5The Mach-Zehnder interference nonvolatile multistage optical switch comprises a broadband light source, a single-mode optical fiber, a peanut-type optical fiber microstructure and a fiber core coated with Ge2Sb2Te5The micropore, 793nm continuous laser, 532nm pulse laser and a spectrum analyzer; the broadband light source is coated with Ge on the fiber core through a single-mode optical fiber and a first peanut-type optical fiber microstructure2Sb2Te5The micropore, the second peanut-shaped optical fiber microstructure and the spectrum analyzer are connected in sequence. The invention provides a method for manufacturing a nonvolatile optical switch by using optical fiber ball-burning fusion, magnetron sputtering coating and optical fiber punching technology to form a peanut type Mach-Zehnder interference structure with interference arms punched and coated with GST, which has the advantages of simple manufacture, low cost and simple structureThe reconfigurable photonic device and the nonvolatile optical switch have wide application prospect.
Description
Technical Field
The invention belongs to the technical field of nonvolatile optical switches, and particularly relates to a phase-change material Ge-based optical switch2Sb2Te5(GST) ofMach-Zehnder interference nonvolatile multistage optical switch and preparation method thereof.
Background
With the popularization of 5G and the large increase of cloud devices, a large amount of data needs to be stored and processed online, and thus data storage and processing are required to be more rapid. However, modern computer systems are based on von neumann architecture, and space-time separation between a processor and a memory is achieved, that is, the processor is only responsible for computation and the memory is only responsible for storage, however, the computation speed of the processor is continuously increased, but the access speed of the memory is not greatly increased, which causes the processor to spend a lot of time waiting for the memory to transmit data every computation, and finally causes the overall computation speed of the computer to be reduced and a lot of energy to be wasted, which is a well-known von neumann bottleneck. Therefore, there is a need to somehow merge the two basic tasks of operation and storage. The counting and storing integrated chip is a recent popular solution, and the core idea is to directly use a memory to perform data calculation, and a nonvolatile optical switch is a core device of the counting and storing integrated chip. The non-volatility of the optical switch means that the switching state of the device does not suddenly disappear and is maintained for a long time without a constant external stimulus. The nonvolatile optical switch has high switching speed and low power consumption, and has important significance for realizing a reconfigurable photonic device and accelerating the bottleneck of von Neumann.
Many nonvolatile optical switches are based on a silicon-based lithography platform, Mach-Zehnder interference waveguides are etched on a track platform by utilizing an electron beam lithography technology, GST is plated on interference arm waveguides to achieve the nonvolatile optical switches, but the waveguide etching process is complicated and high in cost, the silicon-based waveguides are greatly influenced by temperature, the stability of the optical switches is difficult to guarantee, and the practical application of the nonvolatile optical switches is limited. Based on phase change material Ge2Sb2Te5The Mach-Zehnder nonvolatile multilevel optical switch is realized on the optical fiber platform, the optical fiber plays an important role in modern telecommunication infrastructure and has the advantages of on-line data transmission and rapid data transmission, the Mach-Zehnder nonvolatile optical switch of the optical fiber platform not only can realize reconstruction, but also can transmit and interconnect, has huge potential in future 'calculation, storage and transmission' integrated cloud computing,and the Mach-Zehnder interference nonvolatile optical switch of the optical fiber platform also has the advantages of simple preparation and low cost.
Disclosure of Invention
In order to meet the requirements, the invention provides a phase change material Ge-based material2Sb2Te5The Mach-Zehnder interference nonvolatile multistage optical switch and the preparation method thereof. It is an object of the present invention to provide a non-volatile optical switch to achieve multi-level optical switch modulation without the need for an external stimulus.
The technical scheme of the invention is as follows:
based on phase change material Ge2Sb2Te5The Mach-Zehnder interference nonvolatile multistage optical switch comprises a broadband light source, a single-mode optical fiber, a peanut-type optical fiber microstructure and a fiber core coated with Ge2Sb2Te5The micropore, 793nm continuous laser, 532nm pulse laser and a spectrum analyzer; the broadband light source is coated with Ge on the fiber core through a single-mode optical fiber and a first peanut-type optical fiber microstructure2Sb2Te5The micropore, the second peanut-shaped optical fiber microstructure and the spectrum analyzer are connected in sequence.
Based on phase change material Ge2Sb2Te5The preparation method of the Mach-Zehnder interference nonvolatile multistage optical switch comprises the following steps:
the method comprises the following steps: removing a coating layer from the single mode optical fiber, wiping the single mode optical fiber with alcohol, then cutting the end face to be flat, then carrying out arc melting on the end face of the optical fiber for about 30 seconds, forming a microsphere with the diameter of about 170 mu m under the action of surface tension after melting, and forming a second microsphere by using the same method;
step two: the centers of the two melted microspheres are aligned and attached to carry out arc welding, the discharge time is about 20 seconds, the two microspheres subjected to arc welding form a peanut-shaped optical fiber microstructure, and a second peanut-shaped optical fiber microstructure is formed in the same way;
step three: the end faces of the two peanut-shaped optical fiber microstructures are welded in an electric arc mode, and the distance between the two peanut-shaped optical fiber microstructures is about 3.5 cm;
step four: punching a single mode fiber of 3.5cm by using laser, wherein the depth of a hole reaches the position of a fiber core and is about 58 mu m, and the length of the hole is about 300 mu m;
step five: by using magnetron sputtering coating technology, Ge is deposited2Sb2Te5Ge plating at positive counter punching hole of target material2Sb2Te5Thin film of Ge2Sb2Te5The thickness of the film is about 45nm, and the core is coated with Ge2Sb2Te5The micropores of (a).
Plating Ge in the hole by 793nm continuous laser with different laser power2Sb2Te5Irradiating the film to realize Ge2Sb2Te5Multilevel optical switching modulation from the amorphous state to the crystalline state; the power range of the 793nm continuous laser with different laser powers is 6-10 mW.
Ge plated at punched holes by using 532nm pulse laser2Sb2Te5Irradiating the film to realize Ge2Sb2Te5Optical switching modulation from a crystalline state to an amorphous state; the laser power of the 532nm pulse laser is 45 mW.
The invention provides a phase-change material Ge-based material2Sb2Te5The Mach-Zehnder interference nonvolatile multistage optical switch and the preparation method thereof comprise the following steps: the method comprises the steps of firing two peanut-type microstructures, drilling a fiber core by laser, plating a GST film at the position of the drilled hole and realizing the multilevel modulation of the optical switch based on the Mach-Zehnder interference principle.
The optical switch system comprises two peanut-type microstructures, and the structures can realize the beam splitting of a fiber core mold to a cladding and the beam combining of the cladding mold to a fiber core in the optical fiber, thereby realizing the peanut-type Mach-Zehnder interference. The core is punched on the interference arm, and the GST film is plated at the punched position, because the difference of the extinction coefficients of the GST crystalline state and the amorphous state is large, the light intensity of the interference peak can generate multi-stage change by adjusting the crystallization degree of the GST, thereby realizing the multi-stage optical switch, and the state of the GST can not be changed when no constant external excitation source exists, thereby achieving the purpose of the non-volatile multi-stage optical switch.
The working principle of the invention is as follows: the light of a broadband light source is coupled into a peanut-type Mach-Zehnder interference structure, fiber core light in an optical fiber is divided into two beams in a first peanut-type microstructure, one beam enters a cladding to be a cladding mode, the other beam still remains in the fiber core to be a fiber core mode, after the two beams are transmitted for a certain distance, the light in the fiber core and the light in the cladding are combined into one beam at a second peanut-type microstructure, and the fiber core mode and the cladding mode meeting interference conditions can generate interference phenomena. The phase difference between the core mode and the cladding mode in the optical fiber can be expressed as:
in formula (1)
And
effective refractive indices of the core mode and cladding mode, respectively, L is the interference arm length, Δ neffIs the difference between the effective refractive index of the core mode and the cladding mode, and λ is the interference peak wavelength.
The total transmitted light intensity of the optical switch can be expressed as:
i in the formula (2)coreAnd IcladdingThe optical intensity of the core mode and the cladding mode in the optical fiber.
When the interference arm is punched and coated with GST, the extinction coefficient of GST is continuously increased along with the increase of GST crystallization degree, the light intensity of the fiber core mold and the cladding mold is continuously attenuated, and finally the total transmission light intensity is continuously attenuated. Thus, multi-level light intensity modulation can be achieved by varying degrees of attenuation of the interference peak light intensity.
Compared with the prior art, the invention has the following beneficial effects:
1. the nonvolatile optical switch with the all-fiber structure does not need an external constant excitation source, and can realize multi-level light intensity modulation.
2. The manufacturing method of the nonvolatile optical switch is innovatively provided by using optical fiber ball-burning fusion, magnetron sputtering coating and optical fiber punching technologies to form a peanut type Mach-Zehnder interference structure with the interference arm middle punched and coated with GST, and the manufacturing method is simple and low in cost, and has wide application prospects in the fields of reconfigurable photonic devices and nonvolatile optical switches.
Drawings
FIG. 1 is a schematic diagram of a system for a non-volatile optical switch;
FIG. 2 is a schematic diagram of a process for fabricating a non-volatile optical switch;
FIGS. 3a-b are graphs of multi-level modulation spectra and power versus modulation level for non-volatile switches
FIG. 4 is a ladder diagram of the repeatability and stability of a non-volatile optical switch;
fig. 5 is a non-volatile light intensity fluctuation test chart of the optical switch.
Detailed Description
The invention is further described in the following with reference to the following figures and examples:
with reference to the attached drawing 1, the Mach-Zehnder interference nonvolatile multistage optical switch based on the phase change material GST comprises a broadband light source 1, a single-mode optical fiber 2, a peanut-type optical fiber microstructure 3 welded by double spheres, a micropore 4 with a fiber core plated with GST, a 793nm continuous laser 5, a 532nm pulse laser 6 and a spectrum analyzer 7;
the preparation method of the nonvolatile multilevel optical switch structure comprises the steps of firing optical fiber end face microspheres, welding the optical fiber microspheres, perforating laser to a fiber core, and plating a GST film on the fiber core; removing a coating layer of the single-mode optical fiber 2, wiping the coating layer with alcohol, flattening the end face, and then melting the end face of the optical fiber by using an electric arc, wherein the electric arc melting time is about 30 seconds; after the end face of the single-mode optical fiber 2 is fused by electric arc, the end face forms a microsphere 8 with the diameter of about 170 mu m by surface tension, and a second microsphere is formed by the same method; the centers of the two melted microspheres are aligned and tightly attached to carry out arc welding, and the arc welding time is about 20 seconds; the two microspheres after arc welding form a peanut-shaped microstructure 3, and a second peanut-shaped microstructure is formed in the same way; the end surfaces of the two peanut-shaped microstructures are subjected to arc welding, and the distance between the two peanut-shaped microstructures is about 3.5 cm; utilizing laser to punch a hole 9 in a 3.5cm single mode optical fiber, wherein the depth of the hole reaches the position of a fiber core and is about 58 mu m, and the length of the hole is about 300 mu m; coating a GST film 4 at the front-to-opening hole of the GST target by using a magnetron sputtering coating technology, wherein the GST film is about 45nm thick; irradiating the GST film plated at the punching hole by using 793nm continuous lasers 5 with different laser powers to realize the multilevel optical switch modulation of GST from an amorphous state to a crystalline state; the power range of the 793nm continuous laser with different laser powers is 6-10 mW; irradiating the GST film plated at the punching hole by using a 532nm pulse laser 6 to realize the optical switch modulation of GST from a crystalline state to an amorphous state;
the laser power of the 532nm pulse laser is 45 mW;
the invention relates to a nonvolatile optical switch based on the Mach-Zehnder interference principle, which is prepared by utilizing optical fiber ball-burning fusion, laser drilling and magnetron sputtering coating technologies. The optical switch structure comprises two peanut type micro structures, and the structure can realize the beam splitting of a fiber core mold to a cladding and the beam combining of the cladding mold to a fiber core in the optical fiber, thereby realizing the peanut type Mach-Zehnder interference. The core is punched on the interference arm, and the GST film is plated at the punched position, because the difference of the extinction coefficients of the GST crystalline state and the amorphous state is large, the light intensity of the interference peak can be changed in multiple stages by adjusting the crystallization degree of the GST, so that the multi-stage optical switch is realized.
With reference to fig. 2, a mach-zehnder interference nonvolatile multilevel optical switch based on phase change material GST and a preparation method thereof include the following steps:
the method comprises the following steps: removing the coating layer of the single mode optical fiber 2, wiping the single mode optical fiber with alcohol, cutting the end surface to be flat, then carrying out arc melting on the end surface of the optical fiber for about 30 seconds, forming a microsphere 8 with the diameter of about 170 mu m under the action of surface tension after melting, and forming a second microsphere by the same method.
Step two: the centers of the two melted microspheres are aligned and attached to carry out arc welding, the discharge time is about 20 seconds, the two microspheres subjected to arc welding form a peanut-shaped microstructure 3, and a second peanut-shaped microstructure is formed in the same way.
Step three: and welding the end faces of the two peanut-shaped microstructures in an electric arc mode, wherein the distance between the two peanut-shaped microstructures is about 3.5 cm.
Step four: a single mode optical fibre of 3.5cm was drilled 9 with a laser, the depth of the hole reaching the core position being about 58 μm and the length of the hole being about 300 μm.
Step five: and (3) plating a GST film 4 with the thickness of about 45nm on the front side of the hole of the GST target by utilizing a magnetron sputtering coating technology.
And with reference to fig. 3, a multistage modulation test and analysis are performed on the mach-zehnder interference nonvolatile multistage optical switch based on the phase change material GST.
The nonvolatile optical switch is placed in the air for performance test, and other environmental factors are kept unchanged in the experimental process for preventing crosstalk of other environmental factors. The nonvolatile optical switch is respectively connected with the broadband light source and the spectrum analyzer. The method comprises the steps of irradiating a hole-punched GST film by 793nm continuous lasers with different laser powers, performing multi-level optical switch modulation from an amorphous state to a crystalline state of GST, starting modulation from 6mW of the power of a 793nm continuous laser, wherein the time of irradiating GST every time is about 2 seconds, recording data after a spectrum is stabilized, irradiating the hole-punched GST film by 532nm pulse laser with the laser power of about 45mW to restore GST from the crystalline state to the amorphous state, then increasing the 793nm laser power of about 1mW, repeating the above steps until the 793nm laser power is increased to the extent that the irradiation of GST cannot enable an interference spectrum to have obvious change relative to the last time, and stopping the experiment. The obtained spectrum analysis shows that: the 793nm laser irradiates GST, so that the light intensity of an interference spectrum from 0 level to 5 levels is attenuated, 6-level switch modulation is realized, and the 793nm laser power and the modulation level are in a linear relation.
With reference to fig. 4, the mach-zehnder interference nonvolatile multilevel optical switch based on the phase change material GST is used for repeatability and stability test and analysis.
The optical switch is placed in air, after 793nm continuous laser irradiates GST to realize 6-level optical switch modulation from amorphous state to crystalline state, 532nm pulse laser is used for resetting GST from the crystalline state to the amorphous state, and the completion of the two processes is regarded as the end of one modulation period. The 793nm continuous laser and the 532nm pulse laser are switched repeatedly to carry out optical switch repeatability and stability tests for 4 periods, and analysis of the obtained repeated step diagram shows that the light intensity of the same step is stable in a certain range, and the steps can be well distinguished from one another.
With reference to fig. 5, a mach-zehnder interference nonvolatile multistage optical switch based on phase change material GST performs nonvolatile test and analysis.
The nonvolatile optical switch is placed in the air, the light intensity fluctuation test of the modulation order of the optical switch is carried out within 30 days, the test is carried out once every 10 days, and the obtained nonvolatile light intensity fluctuation test chart is analyzed, so that the light intensity fluctuation of each level of the optical switch within 30 days is about 0.2dB, and the light intensity fluctuation of the degree cannot influence the resolution of the modulation order of the optical switch, thereby indicating that the optical switch has good nonvolatile property.
In summary, the above-described embodiments further describe the specific manufacturing method of the present invention in detail. The Mach-Zehnder interference nonvolatile multistage optical switch based on the phase change material GST does not need an external constant excitation source, can realize multistage light intensity modulation, and has the advantages of simple manufacture and low cost. The invention has wide application prospect in the field of reconfigurable photonic devices and nonvolatile optical switches.
The invention provides a phase-change material Ge-based material2Sb2Te5(GST) Mach-Zehnder interference nonvolatile multistage optical switch and a preparation method thereof, belonging to the technical field of nonvolatile optical switches. A system of non-volatile optical switches comprising: broadband light source, single-mode optical fiber and peanut-type optical fiber micro-junction welded by two double spheresThe optical fiber spectrometer comprises a micro-hole with a fiber core coated with GST, a 532nm pulse laser, a 793nm continuous laser and a spectrum analyzer. As the peanut-type optical fiber microstructure welded by double balls can generate Mach-Zehnder interference, GST with different crystallization degrees has extinction coefficients with larger difference, the light intensity of interference peaks can generate multistage change, the optical fiber can be used as a multistage optical switch, and the state of GST can not change when no constant external excitation source exists, thereby achieving the purpose of a nonvolatile optical switch. The invention provides a nonvolatile optical switch with an all-fiber structure, which has the advantages of simple manufacture, no need of an external constant excitation source and realization of multi-level modulation.
Claims (5)
1. Based on phase change material Ge2Sb2Te5The Mach-Zehnder interference nonvolatile multistage optical switch is characterized by comprising a broadband light source, a single-mode optical fiber, a peanut-type optical fiber microstructure and a fiber core plated with Ge2Sb2Te5The micropore, 793nm continuous laser, 532nm pulse laser and a spectrum analyzer; the broadband light source is coated with Ge on the fiber core through a single-mode optical fiber and a first peanut-type optical fiber microstructure2Sb2Te5The micropore, the second peanut-shaped optical fiber microstructure and the spectrum analyzer are connected in sequence.
2. The phase change material Ge-based material of claim 12Sb2Te5The preparation method of the Mach-Zehnder interference nonvolatile multistage optical switch is characterized by comprising the following steps of:
the method comprises the following steps: removing a coating layer from the single mode optical fiber, wiping the single mode optical fiber with alcohol, then cutting the end face to be flat, then carrying out arc melting on the end face of the optical fiber for about 30 seconds, forming a microsphere with the diameter of about 170 mu m under the action of surface tension after melting, and forming a second microsphere by using the same method;
step two: the centers of the two melted microspheres are aligned and attached to carry out arc welding, the discharge time is about 20 seconds, the two microspheres subjected to arc welding form a peanut-shaped optical fiber microstructure, and a second peanut-shaped optical fiber microstructure is formed in the same way;
step three: the end faces of the two peanut-shaped optical fiber microstructures are welded in an electric arc mode, and the distance between the two peanut-shaped optical fiber microstructures is about 3.5 cm;
step four: punching a single mode fiber of 3.5cm by using laser, wherein the depth of a hole reaches the position of a fiber core and is about 58 mu m, and the length of the hole is about 300 mu m;
step five: by using magnetron sputtering coating technology, Ge is deposited2Sb2Te5Ge plating at positive counter punching hole of target material2Sb2Te5Thin film of Ge2Sb2Te5The thickness of the film is about 45nm, and the core is coated with Ge2Sb2Te5The micropores of (a).
3. The phase change material Ge-based material of claim 22Sb2Te5The Mach-Zehnder interference nonvolatile multistage optical switch is characterized in that a 793nm continuous laser with different laser power is used for plating Ge at a punching hole2Sb2Te5Irradiating the film to realize Ge2Sb2Te5Multilevel optical switching modulation from the amorphous state to the crystalline state; the power range of the 793nm continuous laser with different laser powers is 6-10 mW.
4. The phase change material Ge-based material of claim 22Sb2Te5The Mach-Zehnder interference nonvolatile multistage optical switch is characterized in that a 532nm pulse laser is used for plating Ge at a punched hole2Sb2Te5Irradiating the film to realize Ge2Sb2Te5Optical switching modulation from a crystalline state to an amorphous state; the laser power of the 532nm pulse laser is 45 mW.
5. The phase change material Ge-based material of claim 22Sb2Te5Of Mach-Zehnder interference non-volatile multistage optical switchesThe preparation method is characterized in that fiber core light in the optical fiber is divided into two beams in a first peanut-type optical fiber microstructure, one beam enters a cladding layer as a cladding mode, the other beam still remains in the fiber core as a fiber core mode, after the two beams propagate for a certain distance, the light in the fiber core and the light in the cladding layer are combined into one beam at a second peanut-type optical fiber microstructure, and the fiber core mode and the cladding mode meeting interference conditions can generate interference phenomena;
the phase difference between the core mode and the cladding mode in the optical fiber can be expressed as:
in formula (1)
And
effective refractive indices of the core mode and cladding mode, respectively, L is the interference arm length, Δ neffIs the difference between the effective refractive indexes of the core mode and the cladding mode, and lambda is the wavelength of the interference peak;
the total transmitted light intensity of the optical switch can be expressed as:
i in the formula (2)coreAnd IcladdingThe light intensity of a core mode and a cladding mode in the optical fiber;
when the interference arm is punched and plated with Ge2Sb2Te5With Ge, then2Sb2Te5Increase in degree of crystallization, Ge2Sb2Te5The extinction coefficient of the fiber core module and the cladding module is continuously increased, the light intensity of the fiber core module and the cladding module is continuously attenuated, and finally the total transmission light intensity is continuously attenuated, so that the multi-level light intensity modulation is realized through the attenuation of the light intensity of the interference peak in different degrees.
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