CN113676066A - EMI shielding system of gallium nitride quick charging source - Google Patents
EMI shielding system of gallium nitride quick charging source Download PDFInfo
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- CN113676066A CN113676066A CN202111015753.6A CN202111015753A CN113676066A CN 113676066 A CN113676066 A CN 113676066A CN 202111015753 A CN202111015753 A CN 202111015753A CN 113676066 A CN113676066 A CN 113676066A
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 20
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 18
- 230000009466 transformation Effects 0.000 claims abstract description 37
- 238000010521 absorption reaction Methods 0.000 claims abstract description 31
- 230000002441 reversible effect Effects 0.000 claims abstract description 26
- 230000001629 suppression Effects 0.000 claims abstract description 11
- 239000003990 capacitor Substances 0.000 claims description 40
- 238000004804 winding Methods 0.000 claims description 6
- 238000001914 filtration Methods 0.000 claims description 5
- 208000032365 Electromagnetic interference Diseases 0.000 description 24
- 238000010586 diagram Methods 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/12—Arrangements for reducing harmonics from ac input or output
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/42—Circuits or arrangements for compensating for or adjusting power factor in converters or inverters
- H02M1/4208—Arrangements for improving power factor of AC input
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/44—Circuits or arrangements for compensating for electromagnetic interference in converters or inverters
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Abstract
The invention discloses an EMI shielding system of a gallium nitride quick charging source, which comprises: the device comprises a rectification module, a switch module, a voltage transformation module, a reverse surge suppression module, a first RC absorption module and a second RC absorption module; the rectification module is electrically connected with an alternating current input end, the switch module is electrically connected with the rectification module and the transformation module respectively, the first RC absorption module is electrically connected with the transformation module and the switch module respectively, the second RC absorption module is electrically connected with the transformation module and the reverse surge module respectively, and the reverse surge module is electrically connected with the transformation module. The invention realizes effective EMI resistance and improves the working performance of the gallium nitride quick charging source.
Description
Technical Field
The invention relates to the technical field of EMI (electro-magnetic interference), in particular to an EMI shielding system of a gallium nitride quick-charging power supply.
Background
The EMI filter is a filter located between the mains input and the ac rectifier and is required to comply with the electromagnetic compatibility standard. The EMI filter circuit can remove noise waves and certain interference signals, obtain pure power supply input and eliminate the adverse effect of the power supply on the external environment.
The power supply of the switch-on-off switch has high power density, high intelligent degree, small volume and light weight, and is widely used in industry, national defense and household appliances. However, due to the inherent structural characteristics of the switching power supply, the switching power supply generates interference, which is injected into the power grid and pollutes the power grid, and affects the normal operation of the adjacent electronic instruments and devices, so the power supply cannot be applied to some precise electronic instruments without taking certain measures, and therefore, reducing the electromagnetic interference (EMI) of the switching power supply to the external environment is a problem to be solved by those skilled in the art.
Disclosure of Invention
The present invention is directed to an EMI shielding system for a fast gan charging source, which solves the above-mentioned problems of the prior art.
The invention discloses an EMI shielding system of a gallium nitride quick charging source, which comprises a rectification module, a switch module, a voltage transformation module, a reverse surge suppression module, a first RC absorption module and a second RC absorption module, wherein the rectification module is connected with the switch module; the rectification module is electrically connected with an alternating current input end, the switch module is electrically connected with the rectification module and the transformation module respectively, the first RC absorption module is electrically connected with the transformation module and the switch module respectively, the second RC absorption module is electrically connected with the transformation module and the reverse surge module respectively, and the reverse surge module is electrically connected with the transformation module.
Preferably, the EMI shielding system of the gallium nitride fast charging source further includes a power filtering module; the power supply filtering module is electrically connected with the alternating current input end and the rectifying module respectively.
Preferably, the rectifier module comprises a rectifier bridge and a first capacitor; the first end of the rectifier bridge is electrically connected with the input end of a zero line, the second end of the rectifier bridge is electrically connected with the first end of the first capacitor and the voltage transformation module respectively, the third end of the rectifier bridge is electrically connected with the input end of a live line, and the fourth end of the rectifier bridge is electrically connected with the second end of the first capacitor, the switch module and the first RC absorption module respectively.
Preferably, the switching module comprises a gallium nitride switching tube; the first RC absorption module comprises a first resistor and a first capacitor; the first end of the gallium nitride switch tube is electrically connected with the transformation module and the first end of the first resistor respectively, the second end of the first resistor is electrically connected with the first end of the first capacitor, and the second end of the first capacitor is electrically connected with the second section of the gallium nitride switch tube and the rectification module respectively.
Preferably, the second RC absorbing module comprises a second resistor, a second capacitor and a first diode; the first end of the first diode is electrically connected with the first end of the secondary winding of the transformer module and the first end of the second resistor respectively, the second end of the second resistor is electrically connected with the first end of the second capacitor, and the second end of the second capacitor is electrically connected with the second end of the first diode and the reverse surge suppression module respectively.
Preferably, the reverse surge suppression module includes a second diode, a first inductor, and a third capacitor; the first end of the second diode is electrically connected with the first end of the third capacitor and the second RC absorption module respectively, the second end of the second diode is electrically connected with the first end of the first inductor, and the second end of the first inductor is electrically connected with the first end of the third capacitor and the second end of the secondary winding of the transformation module respectively.
The EMI shielding system of the gallium nitride quick charging source has the following beneficial effects that: the device comprises a rectification module, a switch module, a voltage transformation module, a reverse surge suppression module, a first RC absorption module and a second RC absorption module; the rectification module is electrically connected with an alternating current input end, the switch module is electrically connected with the rectification module and the transformation module respectively, the first RC absorption module is electrically connected with the transformation module and the switch module respectively, the second RC absorption module is electrically connected with the transformation module and the reverse surge module respectively, and the reverse surge module is electrically connected with the transformation module. The invention realizes effective EMI resistance and improves the working performance of the gallium nitride quick charging source.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the present invention will be further described with reference to the accompanying drawings and embodiments, wherein the drawings in the following description are only part of the embodiments of the present invention, and for those skilled in the art, other drawings can be obtained without inventive efforts according to the accompanying drawings:
FIG. 1 is a schematic block diagram of an EMI shielding system for a GaN fast charging source in accordance with a preferred embodiment of the invention;
FIG. 2 is a circuit diagram of an EMI shielding system for a GaN fast charging source in accordance with a preferred embodiment of the present invention;
fig. 3 is a circuit diagram of a power filter module of an EMI shielding system of a gan fast charging power supply according to a preferred embodiment of the invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the following will clearly and completely describe the technical solutions in the embodiments of the present invention, and it is obvious that the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present invention without inventive step, are within the scope of the present invention.
Fig. 1 shows a preferred embodiment of the present invention, which includes a rectification module 1, a switch module 2, a transformation module 3, a reverse surge suppression module 4, a first RC absorption module 5, and a second RC absorption module 6; the rectifier module 1 is electrically connected with an alternating current input end, the switch module 2 is electrically connected with the rectifier module 1 and the transformation module 3 respectively, the first RC absorption module 5 is electrically connected with the transformation module 3 and the switch module 2 respectively, the second RC absorption module 6 is electrically connected with the transformation module 3 and the reverse surge module respectively, and the reverse surge module is electrically connected with the transformation module 3. The invention realizes effective EMI resistance and improves the working performance of the gallium nitride quick charging source.
Specifically, referring to fig. 2, the power frequency rectification of the switching power supply adopts bridge rectification, the filter capacitor is charged and discharged without PFC, the input current is a periodic peak current with a short time and a high peak value, the distorted current contains rich higher harmonic components, and the periodic peak current and the distorted current are injected into the power grid to cause serious harmonic pollution, and the rectifier diode causes high-frequency attenuation during reverse recovery to cause interference, and in addition, the equivalent series inductance of the filter capacitor also causes interference. The switching tube VT generates a large peak voltage due to the extremely short conduction time and the lead inductance in the inverter circuit; when the switching tube is turned off, the turn-off time is short, a large current spike is generated, and the spike interference of the switching power supply is called conducted interference, namely conducted EMI (electro-magnetic interference), which is formed by the fact that the spike interference of the switching power supply is transmitted out through the input/output line. When the input/output lines are propagated, an electromagnetic field is generated in the space, and radiation interference is generated. The higher the frequency of the switching tube in the switching power supply, the stronger the conducted interference and radiated interference generated.
Secondly, distributed capacitance exists between the primary and the secondary of the high-frequency transformer, the high-frequency voltage of the primary is directly coupled to the secondary through the distributed capacitance, common-mode noise leads with the same phase are generated on two output lines of the secondary, and if the two lines are unbalanced to ground impedance, the common-mode noise can be converted into differential-mode noise; the element under the high-frequency work has the high-frequency parasitic characteristic, when the high-frequency work is carried out, the conducting wire becomes a transmitting wire, the capacitor becomes an inductor, the inductor becomes a capacitor, the resistor becomes a resonance circuit, the working state of the element is influenced, the frequency characteristic of the element is changed greatly, and the element becomes a radiation interference source in the switching power supply; EMI generated by various consumers in the grid enters the switching power supply along the power lines, mainly in both common and differential modes, where electrical fast transient bursts and surge blasts can cause damage to the power supply or affect its operation.
Preferably, the rectifier module 1 comprises a rectifier bridge D1 and a first capacitor C1; the first end of the rectifier bridge D1 is electrically connected with the input end of a zero line, the second end of the rectifier bridge D1 is electrically connected with the first end of the first capacitor C1 and the voltage transformation module 3 respectively, the third end of the rectifier bridge D1 is electrically connected with the input end of a live line, and the fourth end of the rectifier bridge D1 is electrically connected with the second end of the first capacitor C1, the switch module 2 and the first RC absorption module 5 respectively.
Preferably, the switching module 2 comprises a gallium nitride switching tube VT; the first RC absorption module 5 comprises a first resistor R1 and a first capacitor C3; a first end of the gan switch is electrically connected to the transformer module 3 and a first end of the first resistor R1, a second end of the first resistor R1 is electrically connected to a first end of the first capacitor C3, and a second end of the first capacitor C3 is electrically connected to a second segment of the gan switch VT and the rectifier module 1. In this embodiment, the first RC absorbing module is connected in parallel to two ends of the switching tube VT of the switching module 2, as shown in fig. 1, so as to buffer the energy when the switching tube TV is switched on and off at a high speed, and reduce the absorbed power.
Preferably, the second RC absorbing module 6 comprises a second resistor R2, a second capacitor C4 and a first diode VD 5; the first end of the first diode VD5 is electrically connected with the first end of the secondary winding of the transformer module 3 and the first end of the second resistor R2, respectively, the second end of the second resistor R2 is electrically connected with the first end of the second capacitor C4, and the second end of the second capacitor C4 is electrically connected with the second end of the first diode VD5 and the reverse surge suppression module 4, respectively.
Preferably, in this embodiment, two ends of the high-frequency rectifying diode VD5 in the secondary circuit are connected in parallel with the second absorption module 6, as shown in fig. 1, the rectifying diode VD6 is used to connect the coil with the saturable core in series to suppress the surge voltage, when a normal current is passed through, the core is saturated, the inductance is small, the normal operation is not affected, and once the current is reversed, the core coil will generate a large back electromotive force to effectively suppress the reverse surge current of the first diode VD 5.
Preferably, the reverse surge suppression module 4 includes a second diode VD6, a first inductor L1, and a third capacitor C2; a first end of the second diode VD6 is electrically connected to the first end of the third capacitor C2 and the second RC absorbing module 6, a second end of the second diode VD6 is electrically connected to the first end of the first inductor L1, and a second end of the first inductor L1 is electrically connected to the first end of the third capacitor C2 and the second end of the secondary winding of the transformer module 3.
Preferably, the EMI shielding system of the gan fast charging power supply further includes a power filter module 7; and the power supply filtering module 7 is respectively and electrically connected with the alternating current input end and the rectifying module 1.
Specifically, referring to fig. 3, for EMI, the present embodiment absorbs and prevents the interference by disposing a barrier on the conductive path. The power supply filtering module 7 is added at the input end of the switching power supply, and the filter presents high impedance to high-frequency energy and low impedance to power frequency, so that the propagation path of common-mode interference is blocked, and differential-mode interference in an input loop is attenuated. The filter can effectively inhibit conducted interference, and the filter is connected to the input end of the power supply, so that the interference generated by the switching power supply and fed back to a power grid can be inhibited, and the infringement of noise from the power grid to the switching power supply can be inhibited.
In summary, the EMI shielding system of the gan fast charging power supply provided by the present invention includes a rectifying module 1, a switching module 2, a transforming module 3, a reverse surge suppressing module 4, a first RC absorbing module 5, and a second RC absorbing module 6; the rectifier module 1 is electrically connected with an alternating current input end, the switch module 2 is electrically connected with the rectifier module 1 and the transformation module 3 respectively, the first RC absorption module 5 is electrically connected with the transformation module 3 and the switch module 2 respectively, the second RC absorption module 6 is electrically connected with the transformation module 3 and the reverse surge module respectively, and the reverse surge module is electrically connected with the transformation module 3. Therefore, the invention realizes effective EMI resistance and improves the working performance of the gallium nitride quick charging source.
The EMI shielding system of the gan fast charging source provided by the present invention is introduced in detail, and the principle and the implementation of the present invention are explained herein by applying specific examples, and the description of the above examples is only used to help understanding the method and the core idea of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be a change in the specific implementation and application scope, and in summary, the content of the present specification is only an implementation of the present invention, and not a limitation to the scope of the present invention, and all equivalent structures or equivalent flow transformations made by the content of the present specification and the attached drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention. And should not be construed as limiting the invention.
Claims (6)
1. An EMI shielding system for a gallium nitride fast charging source, comprising: the device comprises a rectification module, a switch module, a voltage transformation module, a reverse surge suppression module, a first RC absorption module and a second RC absorption module; the rectification module is electrically connected with an alternating current input end, the switch module is electrically connected with the rectification module and the transformation module respectively, the first RC absorption module is electrically connected with the transformation module and the switch module respectively, the second RC absorption module is electrically connected with the transformation module and the reverse surge module respectively, and the reverse surge module is electrically connected with the transformation module.
2. The EMI shielding system of a gan fast charging source of claim 1, further comprising a power filter module; the power supply filtering module is electrically connected with the alternating current input end and the rectifying module respectively.
3. The EMI shielding system of a gan fast-charging source of claim 1, wherein the rectifier module comprises a rectifier bridge and a first capacitor; the first end of the rectifier bridge is electrically connected with the input end of a zero line, the second end of the rectifier bridge is electrically connected with the first end of the first capacitor and the voltage transformation module respectively, the third end of the rectifier bridge is electrically connected with the input end of a live line, and the fourth end of the rectifier bridge is electrically connected with the second end of the first capacitor, the switch module and the first RC absorption module respectively.
4. The EMI shielding system of a gan fast charging source of claim 1, wherein the switching module comprises a gan switching tube; the first RC absorption module comprises a first resistor and a first capacitor; the first end of the gallium nitride switch tube is electrically connected with the transformation module and the first end of the first resistor respectively, the second end of the first resistor is electrically connected with the first end of the first capacitor, and the second end of the first capacitor is electrically connected with the second section of the gallium nitride switch tube and the rectification module respectively.
5. The EMI shielding system of a gan fast-charging source of claim 1, wherein the second RC absorbing module comprises a second resistor, a second capacitor and a first diode; the first end of the first diode is electrically connected with the first end of the secondary winding of the transformer module and the first end of the second resistor respectively, the second end of the second resistor is electrically connected with the first end of the second capacitor, and the second end of the second capacitor is electrically connected with the second end of the first diode and the reverse surge suppression module respectively.
6. The EMI shielding system of a gan fast-charging source of claim 1, wherein the reverse surge suppression module comprises a second diode, a first inductor, and a third capacitor; the first end of the second diode is electrically connected with the first end of the third capacitor and the second RC absorption module respectively, the second end of the second diode is electrically connected with the first end of the first inductor, and the second end of the first inductor is electrically connected with the first end of the third capacitor and the second end of the secondary winding of the transformation module respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111015753.6A CN113676066A (en) | 2021-08-31 | 2021-08-31 | EMI shielding system of gallium nitride quick charging source |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202111015753.6A CN113676066A (en) | 2021-08-31 | 2021-08-31 | EMI shielding system of gallium nitride quick charging source |
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| CN202111015753.6A Pending CN113676066A (en) | 2021-08-31 | 2021-08-31 | EMI shielding system of gallium nitride quick charging source |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5621625A (en) * | 1994-08-25 | 1997-04-15 | Samsung Electronics Co., Ltd. | Surge protection circuit for a switching mode power supply |
| CN201846240U (en) * | 2010-09-03 | 2011-05-25 | 深圳茂硕电源科技股份有限公司 | Switching power supply adopting primary side control technology |
| WO2014107846A1 (en) * | 2013-01-09 | 2014-07-17 | 中国长城计算机深圳股份有限公司 | Fully-controlled bridge-type rectifying device having surge suppression function |
| CN104426353A (en) * | 2013-08-27 | 2015-03-18 | 深圳市海洋王照明工程有限公司 | Switching power circuit, lighting device, and charger |
| CN105141117A (en) * | 2015-10-16 | 2015-12-09 | 珠海格力电器股份有限公司 | Switch power supply control circuit and method |
| CN108449832A (en) * | 2018-03-23 | 2018-08-24 | 佛山德仁照明科技有限公司 | A kind of high performance lED power supply |
| CN110112925A (en) * | 2019-05-30 | 2019-08-09 | 深圳创维数字技术有限公司 | Primary side feedback reverse exciting switching voltage regulator |
-
2021
- 2021-08-31 CN CN202111015753.6A patent/CN113676066A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5621625A (en) * | 1994-08-25 | 1997-04-15 | Samsung Electronics Co., Ltd. | Surge protection circuit for a switching mode power supply |
| CN201846240U (en) * | 2010-09-03 | 2011-05-25 | 深圳茂硕电源科技股份有限公司 | Switching power supply adopting primary side control technology |
| WO2014107846A1 (en) * | 2013-01-09 | 2014-07-17 | 中国长城计算机深圳股份有限公司 | Fully-controlled bridge-type rectifying device having surge suppression function |
| CN104426353A (en) * | 2013-08-27 | 2015-03-18 | 深圳市海洋王照明工程有限公司 | Switching power circuit, lighting device, and charger |
| CN105141117A (en) * | 2015-10-16 | 2015-12-09 | 珠海格力电器股份有限公司 | Switch power supply control circuit and method |
| CN108449832A (en) * | 2018-03-23 | 2018-08-24 | 佛山德仁照明科技有限公司 | A kind of high performance lED power supply |
| CN110112925A (en) * | 2019-05-30 | 2019-08-09 | 深圳创维数字技术有限公司 | Primary side feedback reverse exciting switching voltage regulator |
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Application publication date: 20211119 |
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