CN113675714A - Multi-wavelength laser - Google Patents
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- CN113675714A CN113675714A CN202110742021.0A CN202110742021A CN113675714A CN 113675714 A CN113675714 A CN 113675714A CN 202110742021 A CN202110742021 A CN 202110742021A CN 113675714 A CN113675714 A CN 113675714A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 51
- 230000000452 restraining effect Effects 0.000 claims abstract description 3
- 239000013078 crystal Substances 0.000 claims description 77
- 230000005540 biological transmission Effects 0.000 claims description 17
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- 230000003287 optical effect Effects 0.000 claims description 16
- 239000011248 coating agent Substances 0.000 claims description 15
- 239000002131 composite material Substances 0.000 claims description 8
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- 238000005859 coupling reaction Methods 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 4
- 230000007935 neutral effect Effects 0.000 claims description 4
- 238000005086 pumping Methods 0.000 claims description 4
- 230000001808 coupling effect Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000001514 detection method Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 229910052724 xenon Inorganic materials 0.000 description 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08086—Multiple-wavelength emission
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/0915—Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light
- H01S3/0933—Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light of a semiconductor, e.g. light emitting diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
- H01S3/109—Frequency multiplication, e.g. harmonic generation
- H01S3/1095—Frequency multiplication, e.g. harmonic generation self doubling, e.g. lasing and frequency doubling by the same active medium
Abstract
A multi-wavelength laser comprising: a semiconductor laser; the driving circuit is used for changing the output voltage to control the semiconductor laser to output laser with different wavelengths; and the diaphragm is used for restraining the divergence angle and the coaxiality of the pump light. The multi-wavelength laser provided by the invention can realize that one laser can output laser with three different wavelengths at most, and the laser can output laser with different wavelengths, so that the use requirements of day and night can be met respectively, the size of the laser can be further reduced, and the power consumption of the laser can be effectively reduced. The laser of the present invention is provided with currents of different intensities, and laser light of different wavelengths is output. The laser emitted by the laser has coaxial characteristics after passing through the lens group and the diaphragm, and the divergence angles are close, so that the laser can act on the same target according to the requirements by one laser.
Description
Technical Field
The invention relates to the technical field of laser equipment, in particular to a multi-wavelength laser.
Background
The laser has the advantages of excellent monochromaticity, extremely low divergence, extremely high brightness (power) and the like, and is widely applied to a collimator and a biological detector.
Application in laser sighting device:
the laser sighting device is a quick sighting device for firearms, crossbows and the like. The laser sighting device comprises a laser, a horizontal and vertical adjusting device, a driving circuit, a switch, a battery, a guide rail clamp, a shell and the like. The applications include day type, night type and day and night composite type.
The day type laser emitting visible light section, such as 520nm, 532nm, 545nm, 555nm, 577nm, 635nm, etc., is provided with a visible light laser inside the laser alidator.
The night type laser emits laser in infrared wave band, such as 808nm, 940nm, 1064nm, 1535nm and the like, and an infrared laser is arranged in the laser alidator.
The day and night composite type laser device can emit laser in a visible light band and can also emit laser in an infrared band, a visible light laser and an infrared laser are arranged in the laser sighting device, and the two lasers are fixed in parallel. When two lasers are installed in parallel, precise adjustment is needed to enable the lasers to have coincident light spots at a sufficiently long distance (the light spots at positions other than the positions are not coincident, and pointing deviation exists). Because the structure of the alidade is smaller, the space for installing the laser which can be provided by the alidade is smaller, so that the laser can only be fixed by glue due to the limitation of space, and the laser needs to run for a long time and monitor the change of light spots after being fixed by using a glue fixing mode.
Therefore, the use environment of the laser collimator of the single-day type or the night type is severely limited, and the laser collimator of the day-night composite type has a large volume, a heavy weight, and a deviation in the direction. The laser sighting device is mainly used by military and police, and can face various complex environments, so the laser sighting device has the advantages of small size, light weight and day and night universality.
The application in the aspect of biological detectors is as follows:
the biological detector is widely used in the fields of food safety, industrial, agricultural, fishery and pastoral production, medical detection, life science and the like, and is used for identifying material components. Mainstream equipment is not portable at present, and detection cost is high.
The light source of the biological detector currently comprises an LED, a halogen lamp, a xenon lamp, a laser and the like.
Halogen lamps and xenon lamps have continuous spectrum, wide range and high intensity, can detect more types of materials, but have large volume and high power consumption, and cannot be used for portable products.
The LED spectrum is also broad, but the types of detectable materials are very limited due to their large divergence angle and weak intensity.
Halogen lamps, xenon lamps and LED light sources all need filtering, and required wavelengths are output by replacing different filters (groups). The spectral bandwidth of the optical filter (group) is required to be extremely narrow, the requirements on a coating process and equipment are very high, and the difficulty in stable production is very high.
The laser light source is adopted, is determined by the monochromaticity of the laser, has very narrow spectral width and is superior to the light source; the intensity of the laser is large enough due to the directivity and high brightness of the laser; the small volume of the all-solid-state laser is suitable for the portability of equipment. Therefore, the biological detector using laser as the light source has the characteristics of high detection precision, high detection efficiency and portability, and is the most advantageous light source in the future. However, each laser can only output one laser wavelength, which leads to the problem that the biological detector using the laser light source has a limited detection range.
Disclosure of Invention
Problem (A)
In summary, how to provide a laser capable of providing multiple wavelengths to improve the application range of the laser is a problem to be solved by those skilled in the art.
(II) technical scheme
The present invention provides a multi-wavelength laser, including:
a semiconductor laser;
the driving circuit is connected with the semiconductor laser, and the driving circuit changes the output voltage to control the semiconductor laser to output laser with different wavelengths;
the crystal is in any combination form of a laser crystal, a frequency doubling crystal and/or a frequency tripling crystal, and one or more lasers with different wavelengths can be transmitted through the crystal;
coating, namely correspondingly coating the transmission, partial transmission and cut-off of pumping light, fundamental frequency light and frequency doubling light according to the requirement of transmitting laser wavelength;
the lens assembly comprises at least one concave lens and at least one convex lens, and the crystal, the concave lens and the convex lens are sequentially arranged along an irradiation light path of laser;
and the diaphragm is arranged on the front side or the rear side of the convex lens and used for restraining the divergence angle and the coaxiality of the pump light.
Preferably, in the multiwavelength laser provided by the present invention, along an irradiation optical path of laser light, the aperture is disposed on a rear side of the convex lens, and a beam splitter is disposed on a rear side of the aperture.
Preferably, in the multiwavelength laser provided by the present invention, along an irradiation optical path of laser light, the stop is disposed on a front side of the convex lens, and a beam splitter is disposed on a rear side of the convex lens.
Preferably, in the multiwavelength laser provided by the present invention, the beam splitter is an optical filter.
Preferably, in the multiwavelength laser provided by the present invention, the beam splitter is an X prism.
Preferably, in the multiwavelength laser provided by the present invention, one end of the beam splitter is disposed toward the laser light source, and the other end of the beam splitter is disposed with an attenuation sheet.
Preferably, in the multiwavelength laser provided by the present invention, an attenuation sheet is provided around an axial periphery of the optical splitter.
Preferably, in the multiwavelength laser provided by the present invention, the attenuation sheet is neutral density gray glass.
Preferably, in the multiwavelength laser provided by the present invention, a coupling lens for coupling is provided between the semiconductor laser and the crystal.
Preferably, in the multiwavelength laser provided by the present invention, the semiconductor laser is a day and night composite laser collimator, and is configured to output laser with two wavelengths of 545nm for day and 808nm for night; the crystal is a self-frequency doubling crystal, two sides of the crystal are coated with films, one side of the crystal is cut off by laser transmission with the wavelength of 808nm, laser with the wavelength of 545nm and laser with the wavelength of 1090nm, and the other side of the crystal is cut off by laser transmission with the wavelength of 808nm, laser transmission with the wavelength of 545nm and laser with the wavelength of 1090 nm.
Preferably, in the multiwavelength laser provided by the present invention, the semiconductor laser is a 976nm semiconductor laser; the crystal is a self-frequency doubling crystal, two sides of the crystal are coated with films, one side of the crystal is transparent to laser with the wavelength of 976nm, the laser with the wavelength of 577nm and the laser with the wavelength of 1154nm are cut off, and the other side of the crystal is transparent to laser with the wavelength of 577nm, laser with the wavelength of 976nm and laser with the wavelength of 1154 nm.
(III) advantageous effects
The multi-wavelength laser provided by the invention can output laser with three different wavelengths at most by one laser through the structural design, and has the same volume, weight, power consumption and the like as those of one laser. Therefore, one multi-wavelength laser provided by the invention can replace two to three lasers in the prior art, so that the volume and the weight of the laser are reduced, and the production and manufacturing cost of the laser is also reduced. In addition, the laser can output laser with different wavelengths, so that the use requirements of day and night can be met respectively, the size of the laser can be further reduced, and the power consumption of the laser can be effectively reduced. The laser of the present invention is provided with currents of different intensities, and laser light of different wavelengths is output. The laser emitted by the laser has coaxial characteristics after passing through the lens group and the diaphragm, and the divergence angles are close, so that the laser can act on the same target according to the requirements by one laser.
Drawings
FIG. 1 is a schematic diagram of a multi-wavelength laser according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a multi-wavelength laser according to another embodiment of the present invention;
FIG. 3 is a schematic diagram of a multi-wavelength laser according to still another embodiment of the present invention.
In fig. 1 to 3, the correspondence between the part names and the reference numbers is:
the laser comprises a driving circuit 1, a semiconductor laser 2, a coupling lens 3, a crystal 4, a concave lens 5, a convex lens 6, a diaphragm 7, a filter 8, an X prism 9, an attenuation sheet 10 arranged on the end face and an attenuation sheet 11 arranged on the periphery in the axial direction.
Detailed Description
The embodiments of the present invention will be described in further detail with reference to the drawings and examples. The following examples are intended to illustrate the invention but are not intended to limit the scope of the invention.
In the description of the present invention, "a plurality" means two or more unless otherwise specified; the terms "upper", "lower", "left", "right", "inner", "outer", "front", "rear", "head", "tail", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are only for convenience in describing and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, should not be construed as limiting the invention. Furthermore, the terms "first," "second," "third," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "connected" and "connected" are to be interpreted broadly, e.g., as being fixed or detachable or integrally connected; can be mechanically or electrically connected; may be directly connected or indirectly connected through an intermediate. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Referring to fig. 1 to fig. 3, fig. 1 is a schematic diagram of a multi-wavelength laser according to an embodiment of the present invention; FIG. 2 is a schematic diagram of a multi-wavelength laser according to another embodiment of the present invention; FIG. 3 is a schematic diagram of a multi-wavelength laser according to still another embodiment of the present invention.
The invention provides a multi-wavelength laser, which can realize the purpose that one laser outputs lasers with various wavelengths through the structural design.
In the invention, the multi-wavelength laser mainly comprises the following components:
1. semiconductor laser 2
In the present invention, the semiconductor laser 2 may employ various types of lasers, but the selection range thereof should be limited to the semiconductor laser because: the semiconductor laser 2 can change the wavelength of the laser light output from the semiconductor laser 2 by changing the output voltage of the driving circuit 1.
Specifically, the semiconductor laser 2 may be a 808nm semiconductor laser mainly used for a day-night composite laser collimator, or a 976nm semiconductor laser mainly used for a biological detector.
The two types of semiconductor lasers 2 can output laser light of different wavelengths by changing the voltage.
2. Drive circuit 1 connected to semiconductor laser 2
The drive circuit 1 is connected to a power supply, and can output electric energy to the semiconductor laser 2, and the drive circuit 1 changes the output voltage, so that the semiconductor laser 2 outputs laser light of different wavelengths.
3. Crystal 4
The crystal 4 can be any one of a laser crystal, a frequency doubling crystal or a frequency tripling crystal, or a combination of any two of the crystals, or three of the crystals are used together, and the crystal 4 is mainly applied to the following purposes: by coating the crystal 4, one or more lasers of different wavelengths can be transmitted.
In the invention, the selection of the crystal 4, the coating scheme and the type of the semiconductor laser 2 have relevance, and particularly, after the laser wavelength is selected in practical application, the crystal 4, the coating scheme and the type of the semiconductor laser 2 are determined according to the laser wavelength.
The invention is also provided with a coating film, and the coating film is correspondingly coated on the transmission, partial transmission and cut-off of the pumping light, the fundamental frequency light and the frequency doubling light according to the requirement of transmitting the laser wavelength.
4. Lens combination
The lens assembly includes at least one concave lens 5 and at least one convex lens 6, and in the present invention, it is preferable to use one concave lens 5 and one convex lens 6.
The crystal 4, the concave lens 5, and the convex lens 6 are arranged in this order along the irradiation optical path of the laser light (the semiconductor laser 2 is the optical path starting point).
5. Diaphragm 7
Along the outgoing light path of the laser, a diaphragm 7 is disposed on the front side or the rear side of the convex lens 6, and is used for constraining the divergence angle and the coaxiality of the pump light (light emitted by the semiconductor laser 2 in cooperation with the lens).
6. Light splitter
Along the irradiation optical path of the laser, an aperture 7 is disposed behind the convex lens 6, and a beam splitter is disposed behind the aperture 7.
Alternatively, the aperture 7 is provided on the front side of the convex lens 6 along the irradiation optical path of the laser light, and the beam splitter is provided on the rear side of the convex lens 6.
There are various types of spectroscopes, and in the first embodiment of the present invention, the spectroscope is the optical filter 8. In the second embodiment of the present invention, the beam splitter is an X-prism 9. In the second embodiment described above, one end of the beam splitter is provided toward the laser light source, and the other end of the beam splitter is provided with an attenuation sheet, i.e., the attenuation sheet 10 provided on the end surface in fig. 3. Further, attenuation plates, i.e., the attenuation plates 11 disposed axially outward in fig. 3, are disposed around the axial periphery of the optical splitter.
Specifically, the attenuation sheet is neutral density gray glass.
In a preferred embodiment of the invention, a coupling lens 3 for coupling is arranged between the semiconductor laser 2 and the crystal 4.
Specifically, the semiconductor laser 2 is a day and night composite laser collimator for outputting laser beams with two wavelengths of 545nm for day use and 808nm for night use; the crystal 4 is a self-frequency doubling crystal, two sides of the crystal 4 are coated with films, one side of the crystal is 808nm transparent and 545nm &1090nm cutoff, and the other side of the crystal is 808nm &545nm transparent and 1090nm cutoff.
Specifically, the semiconductor laser 2 is a 976nm semiconductor laser; the crystal 4 is a self-frequency doubling crystal, two sides of the crystal 4 are coated with films, one side of the crystal is 976nm transparent and 577nm &1154nm cutoff, and the other side of the crystal is 577nm &976nm transparent and 1154nm partially transparent.
The multi-wavelength laser provided by the invention can output laser with three different wavelengths at most by one laser through the structural design, and has the same volume, weight, power consumption and the like as those of one laser. Therefore, one multi-wavelength laser provided by the invention can replace two to three lasers in the prior art, so that the volume and the weight of the laser are reduced, and the production and manufacturing cost of the laser is also reduced. In addition, the laser can output laser with different wavelengths, so that the use requirements of day and night can be met respectively, the size of the laser can be further reduced, and the power consumption of the laser can be effectively reduced. The laser of the present invention is provided with currents of different intensities, and laser light of different wavelengths is output. The laser emitted by the laser has coaxial characteristic and similar divergence angle after passing through the lens group and the diaphragm 7, so that one laser can act on the same target according to the requirement with the laser of different wavelengths.
In the invention, the multi-wavelength laser adopts a semiconductor pump all-solid-state laser, and comprises a semiconductor laser 2, a coupler (selected), a crystal 4, a lens group, a diaphragm 7, a drive circuit 1 and a light splitter (selected).
The crystal 4 used in the present invention includes, but is not limited to, a self-frequency doubling crystal, a combination of a laser crystal and a frequency tripling crystal, etc., and a crystal material capable of outputting one or more laser wavelengths.
The semiconductor laser 2 used in the present invention includes, but is not limited to, a laser having a wavelength of 808nm, 940nm, or the like capable of pumping the crystal 4.
The coupler used in the present invention may or may not be a lens, an optical fiber.
The lens assembly used in the present invention must include a concave lens 5 and a convex lens 6, and at least one concave lens 5 and one convex lens 6.
The diaphragms 7 used in the present invention are used to constrain the divergence angle and the coaxiality of the pump light, and their installation positions are on both sides of the convex lens 6.
The driving circuit 1 used in the present invention can provide three-gear current output, and the current value of each gear is independent of the output mode (continuous or pulse).
The beam splitter used in the present invention may be a filter 8, an X-prism 9, a dichroic beam splitter group, or the like, or an optical element capable of separating laser light of different wavelengths, or a combination of such an optical element and an attenuation sheet.
The crystal 4 and the lens used in the invention have coating films, and the coating films are matched with the laser wavelength required to be output.
The working principle of the invention is as follows:
the semiconductor laser 2 and the crystal 4 have different electric power consumption requirements when working, and provide currents with different intensities for the laser, so that laser with different wavelengths can be output. The laser emitted by the laser has coaxial characteristic and similar divergence angle after passing through the lens group and the diaphragm 7, so that one laser can act on the same target according to the requirement with the laser of different wavelengths.
Example 1:
the laser sighting device is used for a day and night composite laser sighting device, can output laser wavelengths of 545nm for day and 808nm for night, and laser beams are coaxial and have similar divergence angles.
In the embodiment, a 808nm semiconductor laser 2 is adopted, and a self-frequency doubling crystal 4 is pumped.
In this embodiment, the self-frequency doubling crystal 4 has a coating, one surface of which is coated with 808nm transmission and 545nm &1090nm cutoff, and the other surface of which is coated with 808nm &545nm transmission and 1090nm cutoff.
In this embodiment, the lens has a coating film.
In this embodiment, the diaphragm 7 is located at the exit pupil position of the laser.
In the embodiment, the driving circuit 1 supplies power to the semiconductor laser 2, and when the laser with the wavelength of 808nm is output, the power supply current is continuous and is lower than 100 mA; when 545nm laser is output, the power supply current is square wave pulse, the frequency is 10-10 Khz, and the pulse peak value is higher than 100 mA.
The multi-wavelength laser provided by the embodiment allows the output of 808nm laser when the 545nm laser works, so that an optical filter is not needed.
Example 2:
the embodiment is used for a biological detector, and can output three laser wavelengths of 976nm, 1154nm and 577nm to respectively irradiate the same target area.
In this embodiment, a 976nm semiconductor laser 2 is used to pump a self-frequency-doubling crystal 4.
In this embodiment, the self-frequency doubling crystal 4 has a coating, one side of which is coated with 976nm transmission and 577nm &1154nm cutoff, and the other side is coated with 577nm &976nm transmission and 1154nm partial transmission.
In this embodiment, the lens has a coating film.
In this embodiment, the diaphragm 7 is located at the exit pupil position of the laser.
In this embodiment, the driving circuit 1 supplies power to the semiconductor laser 2, and the supply current is square wave pulse with the same pulse frequency. When 976nm laser is output, the power supply current is the lowest; when 1154nm laser is output, the supply current is low; when 577nm laser is output, the supply current is highest.
In the application of the present embodiment, between the convex lens 6 and the object, replaceable filters 8 are provided, namely a 976nm cut-off 1154nm high-transmittance filter 8 (for 1154nm laser output) and a 976nm &1154nm cut-off filter 8 (for 577nm laser output).
Example 3:
the multi-wavelength laser provided by the embodiment is used for the biological detector, can output three laser wavelengths of 976nm, 1154nm and 577nm, and can irradiate three target areas simultaneously or respectively.
The semiconductor laser 2, crystal 4, lens group, stop 7, and drive circuit 1 of this embodiment are the same as those of embodiment 2.
The driving circuit 1 of the present embodiment supplies power to the semiconductor laser 2, and the supply current is square wave pulses with the same pulse frequency. When 976nm laser is output, the power supply current is the lowest; when 1154nm laser is output, the supply current is low; when 577nm laser is output, the supply current is highest.
In the application of the present embodiment, a fixed beam splitter and attenuator are provided between the convex lens 6 and the target. Wherein the beam splitter is an X-prism 9 and the attenuator is neutral density gray glass.
The multi-wavelength laser provided by the invention adopts the structural design of an all-solid-state laser, and has the inherent advantages of small volume, light weight and high reliability.
The multi-wavelength laser provided by the invention adopts a laser structure which can output laser with at most three different wavelengths, and adopts different pump lasers and crystal 4 materials to form different wavelength combinations.
For example:
the 808nm semiconductor laser 2 pumps the DPM crystal 4 and can output 808nm \1064nm \532nm wavelength combination;
the 808nm semiconductor laser 2 pumps the self-frequency doubling crystal 4 and can output 808nm \1090nm \545nm wavelength combination;
the 940nm semiconductor laser 2 pumps the self-frequency doubling crystal 4 and can output 976nm \1154nm \577nm wavelength combination;
the 808nm semiconductor laser 2 pumps Nd, YVO4 and LBO crystal 4, and can output 808nm \1064nm \355nm wavelength combination.
The invention makes the different output laser have good coaxiality and similar divergence angle by the combination of the lens group and the diaphragm 7, thereby eliminating the adjusting mechanism for aiming at the target in application. When the laser outputs lasers with different wavelengths, the driving circuit 1 can provide different working currents to ensure that the output laser power meets the requirements.
The embodiments of the present invention have been presented for purposes of illustration and description, and are not intended to be exhaustive or limited to the invention in the form disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art. The embodiment was chosen and described in order to best explain the principles of the invention and the practical application, and to enable others of ordinary skill in the art to understand the invention for various embodiments with various modifications as are suited to the particular use contemplated.
Claims (10)
1. A multi-wavelength laser, comprising:
a semiconductor laser;
the driving circuit is connected with the semiconductor laser, and the driving circuit changes the output voltage to control the semiconductor laser to output laser with different wavelengths;
the crystal is in any combination form of a laser crystal, a frequency doubling crystal and/or a frequency tripling crystal, and one or more lasers with different wavelengths can be transmitted through the crystal;
coating, namely correspondingly coating the transmission, partial transmission and cut-off of pumping light, fundamental frequency light and frequency doubling light according to the requirement of transmitting laser wavelength;
the lens assembly comprises at least one concave lens and at least one convex lens, and the crystal, the concave lens and the convex lens are sequentially arranged along an irradiation light path of laser;
and the diaphragm is arranged on the front side or the rear side of the convex lens and used for restraining the divergence angle and the coaxiality of the pump light.
2. The multiwavelength laser of claim 1,
along the irradiation light path of the laser, the diaphragm is arranged on the rear side of the convex lens, and a beam splitter is arranged on the rear side of the diaphragm;
or the like, or, alternatively,
along the irradiation light path of the laser, the diaphragm is arranged on the front side of the convex lens, and the rear side of the convex lens is provided with the light splitter.
3. The multiwavelength laser of claim 2,
the light splitter is an optical filter.
4. The multiwavelength laser of claim 3,
the beam splitter is an X prism.
5. The multiwavelength laser of claim 4,
one end of the light splitter is arranged towards the laser light source, and the other end of the light splitter is provided with an attenuation sheet.
6. The multiwavelength laser of claim 5,
and attenuation sheets are arranged around the axial periphery of the optical splitter.
7. The multiwavelength laser of claim 6,
the attenuation sheet is neutral density gray glass.
8. The multiwavelength laser according to any of claims 1 to 7,
and a coupling lens with coupling effect is arranged between the semiconductor laser and the crystal.
9. The multiwavelength laser of claim 1,
the semiconductor laser is a day and night composite laser collimator and is used for outputting laser with two wavelengths of 545nm for day and 808nm for night;
the crystal is a self-frequency doubling crystal, two sides of the crystal are coated with films, one side of the crystal is cut off by laser transmission with the wavelength of 808nm, laser with the wavelength of 545nm and laser with the wavelength of 1090nm, and the other side of the crystal is cut off by laser transmission with the wavelength of 808nm, laser transmission with the wavelength of 545nm and laser with the wavelength of 1090 nm.
10. The multiwavelength laser of claim 1,
the semiconductor laser is a 976nm semiconductor laser;
the crystal is a self-frequency doubling crystal, two sides of the crystal are coated with films, one side of the crystal is transparent to laser with the wavelength of 976nm, the laser with the wavelength of 577nm and the laser with the wavelength of 1154nm are cut off, and the other side of the crystal is transparent to laser with the wavelength of 577nm, laser with the wavelength of 976nm and laser with the wavelength of 1154 nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110742021.0A CN113675714A (en) | 2021-07-01 | 2021-07-01 | Multi-wavelength laser |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101106252A (en) * | 2006-07-14 | 2008-01-16 | 北京国科世纪激光技术有限公司 | A coaxial light output multi-wave length laser device |
| CN102025100A (en) * | 2010-09-29 | 2011-04-20 | 山东大学 | Single frequency visible laser based on self frequency doubling laser crystal |
| CN107302170A (en) * | 2017-08-24 | 2017-10-27 | 青岛镭创光电技术有限公司 | Dual laser |
| CN206878309U (en) * | 2017-06-28 | 2018-01-12 | 青岛镭创光电技术有限公司 | Dual laser |
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2021
- 2021-07-01 CN CN202110742021.0A patent/CN113675714A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101106252A (en) * | 2006-07-14 | 2008-01-16 | 北京国科世纪激光技术有限公司 | A coaxial light output multi-wave length laser device |
| CN102025100A (en) * | 2010-09-29 | 2011-04-20 | 山东大学 | Single frequency visible laser based on self frequency doubling laser crystal |
| CN206878309U (en) * | 2017-06-28 | 2018-01-12 | 青岛镭创光电技术有限公司 | Dual laser |
| CN107302170A (en) * | 2017-08-24 | 2017-10-27 | 青岛镭创光电技术有限公司 | Dual laser |
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Application publication date: 20211119 |