CN113675618B - Ultra-wideband terahertz absorbing material with double truncated pyramid structure and absorber - Google Patents
Ultra-wideband terahertz absorbing material with double truncated pyramid structure and absorber Download PDFInfo
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- CN113675618B CN113675618B CN202110956697.XA CN202110956697A CN113675618B CN 113675618 B CN113675618 B CN 113675618B CN 202110956697 A CN202110956697 A CN 202110956697A CN 113675618 B CN113675618 B CN 113675618B
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- 239000011358 absorbing material Substances 0.000 title claims abstract description 16
- 239000006096 absorbing agent Substances 0.000 title claims abstract description 12
- 238000010521 absorption reaction Methods 0.000 claims abstract description 64
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 55
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 54
- 229910052751 metal Inorganic materials 0.000 claims abstract description 51
- 239000002184 metal Substances 0.000 claims abstract description 51
- 239000010410 layer Substances 0.000 claims description 90
- 239000000463 material Substances 0.000 claims description 17
- 230000005684 electric field Effects 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 239000011651 chromium Substances 0.000 claims description 5
- 238000005381 potential energy Methods 0.000 claims description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- 239000002131 composite material Substances 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000002835 absorbance Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
Abstract
The invention provides an ultra-wideband terahertz absorbing material with a double-truncated pyramid structure and an absorber, belonging to the technical field of terahertz wave absorption; the absorbing material comprises a plurality of absorbing units, wherein each absorbing unit comprises a graphene layer and a metal structure arranged on the graphene layer; the graphene layer and the metal structure are positioned on the same plane; the plurality of absorption units are sequentially arranged at intervals from top to bottom, and the sizes of the dry absorption units are gradually increased in a step shape from top to bottom; the double truncated pyramid structure is combined with a vertical structure of a few layers by utilizing a composite structure of a planar structure, so that ultra-wideband terahertz absorption is realized; the problems of limitation of the planar structure space and excessive layers of the vertical structure of ultra-wideband terahertz absorption are solved.
Description
Technical Field
The invention belongs to the technical field of terahertz wave absorption, and particularly relates to an ultra-wideband terahertz absorbing material with a double-truncated pyramid structure and an absorber.
Background
Terahertz is a frequency band located between infrared and microwave. Therefore, compared with infrared and visible light wave bands, the terahertz has the characteristics of low quantum energy, penetration of nonpolar substances and the like, and is very suitable for biological detection and safety inspection. Compared with microwaves, terahertz has wider bandwidth and wide application prospect in the fields of broadband communication and radars. The terahertz absorption device has important application in multispectral devices such as sensing stealth and the like.
Terahertz absorbing devices generally consist of a combination of a metal microstructure, a dielectric layer and a metal thin film substrate layer from top to bottom. By adjusting the thickness and refractive index of the dielectric layer, and the shape of the metal microstructures, the THz absorption frequency and bandwidth can be adjusted. Currently, many studies are made on terahertz absorption devices. For example, du et al propose a periodic electric ring resonator array having a multilayer structure. The absorption bandwidth is about 8.02thz (absorption > 90%) throughout the terahertz band (0.1 thz-10 thz). Zhu et al show a truncated pyramid unit structure array of metal-dielectric multilayer composites that achieves a large absorptivity of over 80% over the 0.7 to 2.3 terahertz range. Zhang et al propose a terahertz absorber device based on a double subsurface, consisting of two subsurface separated from the metal ground by dielectric layers of different thickness. The absorbance of 90% or more is obtained in the frequency range of 0.52 to 4.4 thz.
Meanwhile, because the two-dimensional material has excellent regulation performance, terahertz absorption research based on the two-dimensional material also becomes a hot spot. In particular, graphene has excellent tunable characteristics. For example, mou et al propose concentric double rings of graphene tightly patterned from a single layer and from ultra-thin SiO 2 A super surface of spaced apart metallic mirrors. The device has an absorptivity of more than 90% in the range of 1.18-1.64 thz. Mahdi et al propose a polarization insensitive terahertz absorber based on multilayer graphene supersurfaces. The absorber exhibits an extremely wide band of 0.55 to 3.12thz>Absorbance of 90%.
To achieve broadband absorption, a multilayer structure of metal or two-dimensional materials stacked on a plane or vertical space is an effective way. However, due to space constraints, the planar structure is difficult to achieve ultra-wideband absorption. Stacking of the multilayer structure in the vertical direction is an effective method of expanding the absorption bandwidth, but the overlapping of the multilayer structure increases the size of the structure. Currently, the method of ultra-wideband terahertz absorption is mainly by constructing a complex microstructure in a plane or stacking a multilayer structure in a vertical and electric field direction. However, introducing multiple frequency band structures and excessive layers in the same layer increases the size of the structure and makes the fabrication more complex due to space constraints. Therefore, the combination of the metal and the two-dimensional material can reduce the number of layers of the structure and realize ultra-wideband terahertz absorption. Ultra-wideband and high terahertz absorbent structures remain a challenge.
Disclosure of Invention
The invention overcomes the defects of the prior art and provides an ultra-wideband terahertz absorbing material with a double-truncated pyramid structure and an absorber. The problems of limitation of the planar structure space and excessive layers of the vertical structure of ultra-wideband terahertz absorption are solved.
In order to achieve the above purpose, the present invention is realized by the following technical scheme.
The ultra-wideband terahertz absorbing material with the double truncated pyramid structure comprises an absorbing unit, wherein the absorbing unit comprises a graphene layer and a metal structure arranged on the graphene layer; the graphene layer and the metal structure are positioned on the same plane; the plurality of absorption units are sequentially arranged at intervals from top to bottom, and the sizes of the plurality of absorption units are gradually increased in a step shape from top to bottom.
Preferably, the metal substrate comprises 5 layers of absorption units, a dielectric layer is arranged above the 5 layers of absorption units, and a metal substrate is arranged below the 5 layers of absorption units.
More preferably, the metal substrate is gold, and the conductivity is 4.5X10 5 S/m。
More preferably, the refractive index of the dielectric layer is 1.3-1.5.
Preferably, the plurality of absorption units are arranged at equal intervals from top to bottom, the intervals being 3-7 μm, preferably 5 μm.
Preferably, the graphene layer is composed of a single-layer or multi-layer graphene material, and different terahertz absorption bandwidths can be dynamically adjusted by adjusting the chemical potential energy of the graphene layer.
More preferably, the graphene layer is composed of 3 layers of graphene material. The chemical potential of the graphene layer is preferably 0.26eV and the scattering rate is preferably 3.3meV.
Preferably, the metal material may be a material having a conductivity which does not differ much from that of chromium, such as cobalt, nickel, zinc, etc. The conductivity of the metal structure is preferably 2.2X10 5 S/m。
Preferably, the graphene layer and the metal structure are both square structures, and the metal structure is located at the center of the graphene layer.
Preferably, the location of the electric field enhancement is first moved from the graphene level of the bottom layer to the top layer and then up from the metal structure level of the bottom layer.
The absorption frequency of the graphene layer is in a low frequency band, and the absorption frequency of the metal structure is in a high frequency band.
The size of the structure is enlarged or reduced by 5 times on the basis of the structure, and the material properties of the graphene and the metal chromium are not changed too much, so that the same ultra-wideband absorption effect can be presumed for the corresponding band enlargement or reduction by 5 times.
An absorber having an ultra-wideband terahertz absorbing material; the ultra-wideband terahertz absorber is composed of a periodic double-truncated pyramid structure.
Compared with the prior art, the invention has the following beneficial effects:
in order to solve the problems of space limitation of a planar structure and excessive layers of a vertical structure, the invention combines the planar hybrid structure with a few-layer vertical structure, and effectively avoids the defects of the two structures. Therefore, the invention provides a double truncated pyramid-shaped terahertz absorption unit structure based on five layers of metal and five layers of graphene. The metal and the graphene are in the same plane, and the five-layer structure can provide a plurality of resonances on the vertical plane, so that the number of layers of the vertical plane and the complex structure of the plane can be reduced, and ultra-wideband and ultra-high terahertz absorption can be realized. In addition, the structures of each metal layer and the graphene layer are very simple, and the preparation is facilitated. Simulation results show that the absorption of the graphene layer and the metal layer at low frequency and high frequency is combined, so that the absorption coefficient is greater than 0.9, and the maximum absorption bandwidth can reach 11.23 THz. In addition, by adjusting the chemical potential of graphene, the absorption bandwidth can be further adjusted.
Drawings
Fig. 1 is a side view of a dual truncated pyramid-shaped terahertz absorption unit structure based on five-layer metal and five-layer graphene, provided by an embodiment of the invention; wherein 1 is a dielectric layer, 2-6 is graphene, 7 is a metal substrate, and 8-12 is a metal structure.
FIG. 2 is a top view of FIG. 1;
FIG. 3 is an absorption graph of a double truncated pyramid structure according to an embodiment of the present invention;
FIG. 4 is a graph showing the electric field distribution of a double truncated pyramid structure at different resonant absorption peak frequencies;
FIG. 5 is an absorption graph of a five-layer metal/graphene structure;
fig. 6 is an absorption diagram of a five-layer graphene with a double truncated pyramid structure at different chemical potentials.
Detailed Description
In order to make the technical problems, technical schemes and beneficial effects to be solved more clear, the invention is further described in detail by combining the embodiments and the drawings. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention. The following describes the technical scheme of the present invention in detail with reference to examples and drawings, but the scope of protection is not limited thereto.
As shown in fig. 1, the embodiment provides a dual-truncated pyramid-shaped terahertz absorption unit structure based on five-layer metal and five-layer graphene, which comprises a dielectric layer 1, graphene, a metal structure and a metal substrate 7, wherein the metal structure is arranged above the graphene, a total of five-layer graphene (2, 3, 4, 5, 6) and metal structures (8, 9, 10, 11, 12) are arranged, the distance between each layer of structure is P, and the distance between the top-layer graphene and the top-layer dielectric layer 1 is also P. The top view of the double-truncated pyramid-shaped terahertz absorption unit structure is square, and a signal source is positioned above the dielectric medium 1 and vertically enters the double-truncated pyramid-shaped terahertz absorption unit structure, as shown in fig. 2.
Specifically, in this embodiment, the refractive index of the dielectric layer 1 is 1.4, the material thickness is 30 μm, and the period L of the unit structure isThe pitch P between each layer of structure was 20 μm and 5 μm. The chemical potential energy of the graphene is 0.26eV, the scattering rate is 3.3meV, and the number of layers is 3. The metal structure is chromium, and the conductivity is 2.2 multiplied by 10 5 S/m, the thickness of the material is 200nm. The metal substrate 7 is gold with conductivity of 4.5X10 5 S/m, the thickness of the material is 200nm.
As shown in fig. 3, an absorption graph of a dual truncated pyramid-shaped terahertz absorption unit structure of five-layer metal and five-layer graphene provided in this embodiment is shown. As shown, the absorption coefficient of the material absorber is greater than 0.9 from 1.49-12.72 THz, and the absorption bandwidth is 11.23 THz. Wherein the resonance absorption points A, B, C, D, E, F, G, H of the absorption curves are 1.72, 2.97, 5.00, 6.65, 9.15, 11.27, 12.00, 13.76THz, respectively.
As shown in fig. 4, the electric field diagrams of 1.72, 2.97, 5.00, 6.65, 9.15, 11.27, 12.00, and 13.76THz resonance frequencies are respectively shown. It can be seen from the electric field that the electric field at the graphene edge is enhanced at low frequencies. The metal fringing electric field is enhanced at high frequencies. Meanwhile, the electric field resonance frequencies of the graphene layer and the metal layer from the first layer to the fifth layer are significantly different. The results show that when the resonance frequencies are 1.72, 2.97, 5.00 and 6.65TH, the graphene can realize electric field resonance from the first layer to the fourth layer, and the resonance intensity is sequentially transferred upwards from the fourth layer to the first layer. As the resonance frequency continues to increase to 9.15, 11.27, 12.00 and 13.76TH, the electric field resonance of the metal structure occurs at layers 1 to 5, and the electric field strength increases from layer 5 sequentially up to layer 2. Therefore, as the frequency increases, the graphene layer structure absorbs terahertz from bottom to top at low frequencies, while the metal layer structure absorbs terahertz from bottom to top at high frequencies, resulting in ultra-wideband absorption.
As shown in fig. 5, the absorption coefficient of five graphene/five metal layers is that the absorption frequency of graphene is obviously found in the low frequency band, while the absorption frequency of metal is found in the high frequency band. The absorption of graphene is mainly concentrated in the low frequency range of 1.40-4.64THz, while the absorption of the metal layer is mainly concentrated in the high frequency ranges of 7.09-11.80THz and 12.81-14.32 THz.
As shown in fig. 6, the absorption diagram of the double truncated pyramid structure of five-layer graphene under different chemical potential energy can realize different terahertz absorption bandwidths through chemical potential energy adjustment of the graphene.
While the invention has been described in detail in connection with specific preferred embodiments thereof, it is not to be construed as limited thereto, but rather as a result of a simple deduction or substitution by a person having ordinary skill in the art to which the invention pertains without departing from the scope of the invention defined by the appended claims. Such as diffusing the corresponding absorption bands into the infrared, visible, microwave bands. Although the material characteristics of graphene and metal chromium can be changed, other materials are replaced, the composite structure of a planar structure and the vertical structure of a few layers are combined to realize multi-band electromagnetic wave absorption from the outer layer to the inner layer from bottom to top, and the ultra-wideband electromagnetic wave absorption is obtained.
Claims (10)
1. The ultra-wideband terahertz absorbing material with the double truncated pyramid structure is characterized by comprising an absorbing unit, wherein the absorbing unit comprises a graphene layer and a metal structure arranged on the graphene layer; the graphene layer and the metal structure are positioned on the same plane; the plurality of absorption units are sequentially arranged at intervals from top to bottom, and the sizes of the plurality of absorption units are gradually increased in a step shape from top to bottom.
2. Ultra wideband terahertz absorbing material with double truncated pyramid structure according to claim 1, characterized in that it comprises 5 layers of absorbing units, a dielectric layer (1) is arranged above the 5 layers of absorbing units, and a metal substrate (7) is arranged below the 5 layers of absorbing units.
3. Ultra wideband terahertz absorbing material with a double truncated pyramid structure according to claim 2, characterized in that the metal substrate (7) is gold.
4. Ultra wideband terahertz absorbing material with double truncated pyramid structure according to claim 2, characterized in that the refractive index of the dielectric layer (1) is 1.3-1.5.
5. The ultra-wideband terahertz absorbing material with a double truncated pyramid structure according to claim 1, wherein a plurality of absorbing units are arranged at equal intervals from top to bottom, with an interval of 3-7 μm.
6. The ultra-wideband terahertz absorption material with a double truncated pyramid structure according to claim 1, wherein the graphene layer is composed of a single layer or multiple layers of graphene materials to achieve different terahertz absorption bandwidths by adjusting chemical potential energy of the graphene layer.
7. The ultra-wideband terahertz absorbing material with a double truncated pyramid structure according to claim 1, wherein the metal structure is any one of chromium, nickel, and zinc.
8. The ultra-wideband terahertz absorbing material with a double truncated pyramid structure according to claim 1, wherein the graphene layer and the metal structure are both square structures, and the metal structure is located at the center of the graphene layer.
9. The ultra-wideband terahertz absorbing material with a double truncated pyramid structure according to claim 1, wherein the location of the electric field enhancement first moves from the graphene level of the bottom layer to the top layer and then moves upward from the metal structure location of the bottom layer.
10. An absorber having the ultra-wideband terahertz absorption material as claimed in any one of claims 1 to 9.
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