CN113675291B - 基于肖特基接触的双层硅基光电突触器件及制备方法 - Google Patents
基于肖特基接触的双层硅基光电突触器件及制备方法 Download PDFInfo
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 47
- 239000010703 silicon Substances 0.000 title claims abstract description 47
- 210000000225 synapse Anatomy 0.000 title claims abstract description 36
- 238000002360 preparation method Methods 0.000 title abstract description 6
- 239000002346 layers by function Substances 0.000 claims abstract description 41
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- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 23
- 230000003287 optical effect Effects 0.000 claims abstract description 19
- 239000010410 layer Substances 0.000 claims abstract description 15
- 230000000007 visual effect Effects 0.000 claims abstract description 12
- 230000004044 response Effects 0.000 claims abstract description 7
- 230000006870 function Effects 0.000 claims abstract description 6
- 230000001242 postsynaptic effect Effects 0.000 claims abstract description 5
- 230000036982 action potential Effects 0.000 claims abstract description 4
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- 239000000969 carrier Substances 0.000 claims description 6
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 6
- 239000002923 metal particle Substances 0.000 claims description 6
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- 238000004544 sputter deposition Methods 0.000 claims description 6
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 3
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- 230000008569 process Effects 0.000 claims description 3
- 238000005215 recombination Methods 0.000 claims description 3
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- 239000010409 thin film Substances 0.000 claims description 3
- 230000001537 neural effect Effects 0.000 claims 1
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- 230000002085 persistent effect Effects 0.000 description 2
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- 239000002355 dual-layer Substances 0.000 description 1
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- 238000001228 spectrum Methods 0.000 description 1
- 230000003977 synaptic function Effects 0.000 description 1
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Abstract
本发明提供一种基于肖特基接触的双层硅基光电突触器件及制备方法,从上至下具有透明顶电极、硅基非晶薄膜功能层、非晶硅钌薄膜功能层、透明底电极的垂直三明治结构;非晶硅钌薄膜功能层为光敏层,用于吸收可见光到近红外光范围内的光子;硅基非晶薄膜功能层与非晶硅钌薄膜功能层构成肖特基势垒;器件以不同波长的光信号模拟视觉突触前端的动作电位,以器件的光响应电流模拟突触后电流,通过电读取的方式,在可见光到近红外光谱范围内实现多项视觉神经突触可塑性,进而实现学习、记忆和颜色识别的仿生视觉突触功能。本发明所述光电突触器件具有较宽的工作带宽,有望在神经形态芯片以及未来智能机器人视觉系统中获得应用。
Description
技术领域
本发明属于本发明属于硅基光电子集成器件与神经形态芯片领域,具体涉及一种基于肖特基接触的双层硅基光电突触器件及其制备方法。
背景技术
神经网络计算以其自适应学习、高并行计算和低能耗等优点,被认为是能够解决冯·诺依曼瓶颈、存储墙等问题的最有效方法之一。实现神经网络计算的重要前提是开发出能够模拟生物突触行为的突触器件。已有的绝大部分专利均为以电信号作为激励源的突触器件,被称之为电学突触。这类突触器件采用“电激励-电读取”的工作方式来实现人工突触功能。它们在统筹考虑带宽、连接、密度等因素下的整体优化面临着巨大挑战,故研究者将光引入神经突触器件,研制使用光信号作为激励源的光电突触器件。与电学突触器件相比,光不仅具备电难以实现的高带宽、低串扰、低功耗等特性,还可以直接模拟视觉等至关重要的神经行为。目前,以光信号作为激励源实现突触功能的公开专利还很少,而且大多数光电突触器件使用的是紫光或者紫外光作为激励源,仅有个别公开专利能够做到长波响应。
发明内容
为了突破电学突触的带宽限制和已有的绝大多数光电突触器件无法做到宽光谱响应的局限,本发明提出一种基于肖特基接触的双层硅基光电突触器件及其制备方法。
为实现上述发明目的,本发明技术方案如下:
一种基于肖特基接触的双层硅基光电突触器件,所述器件从上至下具有透明顶电极1、硅基非晶薄膜功能层2、非晶硅钌薄膜功能层3、透明底电极4的垂直三明治结构。
非晶硅钌薄膜功能层3对可见光到近红外光范围的激励光敏感,用于吸收可见光到近红外光范围内的光子;硅基非晶薄膜功能层2与非晶硅钌薄膜功能层3构成肖特基势垒,用于降低并控制光生载流子的复合速率,实现对光生载流子的动态捕获和去捕获。
器件以不同波长的光信号模拟视觉突触前端的动作电位,以器件的光响应电流模拟突触后电流,通过电读取的方式,在可见光到近红外光谱范围内实现多项视觉神经突触可塑性,进而实现学习、记忆和颜色识别的仿生视觉突触功能。
作为优选方式,透明顶电极和透明底电极选氧化铟锡薄膜、或氧化铟锌薄膜;透明顶电极和/或透明底电极作为光电突触器件的光学窗口。
作为优选方式,多个透明顶电极形成的阵列等距排布在器件上表面。
作为优选方式,非晶硅钌薄膜功能层3采用纯度大于99.999%的纯硅靶材和纯钌Ru金属颗粒射频磁控共溅射的方法获得,厚度为50nm~200nm,钌Ru名义含量为1%~5%。
作为优选方式,硅基非晶薄膜功能层2选自氧化硅薄膜、氮化硅薄膜、氮氧化硅薄膜其中一种,采用陶瓷靶材射频磁控溅射的方法获得,厚度为10nm~40nm。
作为优选方式,激励源为不同波长的光信号,波长范围为450nm~905nm。
本发明还提供一种基于肖特基接触的双层硅基光电突触器件的制备方法,包括如下步骤:
(1)选择透明导电玻璃作为底电极,并进行清洗和干燥处理;
(2)将透明导电玻璃划分为电极区和功能区,对电极区进行保护,在功能区预留窗口;
(3)在流程(2)的基础上,采用纯硅靶材和纯钌金属颗粒射频磁控共溅射的方法获得非晶硅钌薄膜功能层3;
(4)在流程(3)的基础上,采用陶瓷靶材射频磁控溅射的方法获得氧化硅薄膜、或氮化硅薄膜、或氮氧化硅薄膜作为硅基非晶薄膜功能层2;
(5)在流程(4)的基础上,采用氧化铟锡靶材、或氧化铟锌靶材,并结合掩模版,用磁控溅射的方法获得阵列化透明顶电极。
本发明的工作原理为:当光激励信号作用于所述光电突触器件上时,光信号与非晶硅钌薄膜功能层3相互作用产生光生载流子,所产生的电子-空穴对在内建电场的作用下分离,一部分到达电极,一部分被硅基非晶薄膜功能层2/非晶硅钌薄膜功能层3构成的界面陷阱、和/或功能层硅基非晶薄膜功能层2(非晶硅钌薄膜功能层3)/透明上(下)电极构成的界面缺陷、和/或硅基非晶薄膜功能层2和非晶硅钌薄膜功能层3中的陷阱捕获;当光激励信号从器件上移除后,被捕获的光生电子被缓慢释放出,从而产生持续性光电导效应。光电流的衰减时间随着激励光能量、功率以及激励时间发生变化。因此,当光信号为突触前激励源,而光电流为突触后电流时,器件便可以实现突触功能。
本发明的有益效果为:本发明所述光电突触器件具有较宽的工作带宽,有望在神经形态芯片以及未来智能机器人视觉系统中获得应用。
附图说明
图1是本发明的结构示意图。
图2(a)、图2(b)和图2(c)分别为按照具体实施例制备的光电突触器件在450nm、635nm和905nm光激励下的光电流响应和持续光电导现象。
1为透明顶电极,2为硅基非晶薄膜功能层、3为非晶硅钌薄膜功能层,4为透明底电极。
具体实施方式
以下通过特定的具体实例说明本发明的实施方式,本领域技术人员可由本说明书所揭露的内容轻易地了解本发明的其他优点与功效。本发明还可以通过另外不同的具体实施方式加以实施或应用,本说明书中的各项细节也可以基于不同观点与应用,在没有背离本发明的精神下进行各种修饰或改变。
图1所示,本实施例提供一种基于肖特基接触的双层硅基光电突触器件,所述器件从上至下具有透明顶电极1、硅基非晶薄膜功能层2、非晶硅钌薄膜功能层3、透明底电极4的垂直三明治结构。
非晶硅钌薄膜功能层3对可见光到近红外光范围的激励光敏感,用于吸收可见光到近红外光范围内的光子;硅基非晶薄膜功能层2与非晶硅钌薄膜功能层3构成肖特基势垒,用于降低并控制光生载流子的复合速率,实现对光生载流子的动态捕获和去捕获。
器件以不同波长的光信号模拟视觉突触前端的动作电位,以器件的光响应电流模拟突触后电流,通过电读取的方式,在可见光到近红外光谱范围内实现多项视觉神经突触可塑性,进而实现学习、记忆和颜色识别的仿生视觉突触功能。
优选的,透明顶电极和透明底电极选氧化铟锡薄膜、或氧化铟锌薄膜;透明顶电极和/或透明底电极作为光电突触器件的光学窗口。
优选的,多个透明顶电极形成的阵列等距排布在器件上表面。
优选的,非晶硅钌薄膜功能层3采用纯度大于99.999%的纯硅靶材和纯钌Ru金属颗粒射频磁控共溅射的方法获得,厚度为50nm~200nm,钌Ru名义含量为1%~5%。
优选的,硅基非晶薄膜功能层2选自氧化硅薄膜、氮化硅薄膜、氮氧化硅薄膜其中一种,采用陶瓷靶材射频磁控溅射的方法获得,厚度为10nm~40nm。
优选的,激励源为不同波长的光信号,波长范围为450nm~905nm。
本实施例还提供一种基于肖特基接触的双层硅基光电突触器件的制备方法,包括如下步骤:
(1)选择透明导电玻璃作为底电极,并进行清洗和干燥处理;
(2)将透明导电玻璃划分为电极区和功能区,对电极区进行保护,在功能区预留窗口;
(3)在流程(2)的基础上,采用纯硅靶材和纯钌金属颗粒射频磁控共溅射的方法获得非晶硅钌薄膜功能层3;
(4)在流程(3)的基础上,采用陶瓷靶材射频磁控溅射的方法获得氧化硅薄膜、或氮化硅薄膜、或氮氧化硅薄膜作为硅基非晶薄膜功能层2;
(5)在流程(4)的基础上,采用氧化铟锡靶材、或氧化铟锌靶材,并结合掩模版,用磁控溅射的方法获得阵列化透明顶电极。
上述实施例仅例示性说明本发明的原理及其功效,而非用于限制本发明。任何熟悉此技术的人士皆可在不违背本发明的精神及范畴下,对上述实施例进行修饰或改变。因此,凡所属技术领域中具有通常知识者在未脱离本发明所揭示的精神与技术思想下所完成的一切等效修饰或改变,仍应由本发明的权利要求所涵盖。
Claims (7)
1.一种基于肖特基接触的双层硅基光电突触器件,其特征在于:
所述器件从上至下具有透明顶电极(1)、硅基非晶薄膜功能层(2)、非晶硅钌薄膜功能层(3)、透明底电极(4)的垂直三明治结构;
非晶硅钌薄膜功能层(3)对可见光到近红外光范围的激励光敏感,用于吸收可见光到近红外光范围内的光子;硅基非晶薄膜功能层(2)与非晶硅钌薄膜功能层(3)构成肖特基势垒,用于降低并控制光生载流子的复合速率,实现对光生载流子的动态捕获和去捕获;
器件以不同波长的光信号模拟视觉突触前端的动作电位,以器件的光响应电流模拟突触后电流,通过电读取的方式,在可见光到近红外光谱范围内实现多项视觉神经突触可塑性,进而实现学习、记忆和颜色识别的仿生视觉突触功能。
2.根据权利要求1所述的一种基于肖特基接触的双层硅基光电突触器件,其特征在于:透明顶电极和透明底电极选氧化铟锡薄膜、或氧化铟锌薄膜;透明顶电极和/或透明底电极作为光电突触器件的光学窗口。
3.根据权利要求1所述的一种基于肖特基接触的双层硅基光电突触器件,其特征在于:多个透明顶电极形成的阵列等距排布在器件上表面。
4.根据权利要求1所述的一种基于肖特基接触的双层硅基光电突触器件,其特征在于:非晶硅钌薄膜功能层(3)采用纯度大于99.999%的纯硅靶材和纯钌Ru金属颗粒射频磁控共溅射的方法获得,厚度为50nm~200nm,钌Ru名义含量为1%~5%。
5.根据权利要求1所述的一种基于肖特基接触的双层硅基光电突触器件,其特征在于:硅基非晶薄膜功能层(2)选自氧化硅薄膜、氮化硅薄膜、氮氧化硅薄膜其中一种,采用陶瓷靶材射频磁控溅射的方法获得,厚度为10nm~40nm。
6.根据权利要求1所述的一种基于肖特基接触的双层硅基光电突触器件,其特征在于:激励源为不同波长的光信号,波长范围为450nm~905nm。
7.权利要求1至6任意一项所述的一种基于肖特基接触的双层硅基光电突触器件的制备方法,其特征在于包括如下步骤:
(1)选择透明导电玻璃作为底电极,并进行清洗和干燥处理;
(2)将透明导电玻璃划分为电极区和功能区,对电极区进行保护,在功能区预留窗口;
(3)在流程(2)的基础上,采用纯硅靶材和纯钌金属颗粒射频磁控共溅射的方法获得非晶硅钌薄膜功能层(3);
(4)在流程(3)的基础上,采用陶瓷靶材射频磁控溅射的方法获得氧化硅薄膜、或氮化硅薄膜、或氮氧化硅薄膜作为硅基非晶薄膜功能层(2);
(5)在流程(4)的基础上,采用氧化铟锡靶材、或氧化铟锌靶材,并结合掩模版,用磁控溅射的方法获得阵列化透明顶电极。
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