CN113673079A - Beam nanosecond pulse forming system parameter optimization simulation design method - Google Patents
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Abstract
The invention discloses a beam nanosecond pulse forming system parameter optimization simulation design method, which belongs to the technical field of pulse forming system parameter optimization design and comprises the following steps; s1: establishing a beam line design scheme of a pulse neutron generator and a beam pulse forming system thereof; s2: establishing a peer-to-peer (P IC) simulation model according to the harness design scheme established in the step S1; s3: setting simulation parameters of a beam pulse forming system according to the PI C simulation model, and calculating a result; s4: verifying the calculation result of the simulation model; s5: and repeating the steps S3 and S4 to optimize the PI C simulation model of the beam pulse shaping system. According to the method, the beam design scheme of the pulse neutron emitter and the beam pulse forming system is established, the PI C simulation model is established by utilizing the beam design scheme, the accuracy of the established PI C simulation model is ensured according to continuous optimization of the set parameters of the PI C simulation model, and powerful data support is provided for the design of the beam nanosecond pulse forming system.
Description
Technical Field
The invention belongs to the technical field of parameter optimization design of pulse forming systems, and particularly relates to a beam nanosecond pulse forming system parameter optimization simulation design method.
Background
The pulse neutron generator is a high-tech device with important scientific research application and industrial application value, and is a key device for developing neutron nuclear data measurement, nuclear fusion and nuclear fission related research, material element analysis research and the like. Nanosecond pulse neutron generators are built in the last 60 th century of the United states and in the last 80 th century of Japan, and a great deal of neutron nuclear data and secondary neutron energy spectrum measurement work is carried out, so that a great deal of work is done for establishing and continuously perfecting the United states nuclear database ENDF/B-6 and the Japanese nuclear database JENDL-3.2. The nanosecond pulse neutron generator CIAE 600kV is successfully developed in China at the beginning of the century, and plays an important role in establishing a nuclear database CENDL-3.2 in China.
In recent years, on the one hand, nanosecond pulsed neutron generators built in the last century have reached the end of retirement, equipment aging has been difficult to operate in an optimal state; on the other hand, the development and research based on the nanosecond pulsed neutron application technology urgently needs a nanosecond pulsed neutron generator which can develop related research work. Therefore, many countries have initiated the development of a new generation of nanosecond pulse neutron generator, such as the established high-current nanosecond pulse neutron generator FRANZ in germany, and the research on a novel nanosecond pulse neutron source using the linear induction acceleration principle in china. In a pulse neutron generator, a beam nanosecond pulse forming system is a core key technology, so that parameter optimization simulation of the existing beam nanosecond pulse forming system is the main direction of current research, and the method has important significance for research and development of the pulse neutron generator.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides a beam nanosecond pulse forming system parameter optimization simulation design method, which verifies the reliability of the calculation result of the simulation model by establishing a beam line design scheme of a pulse neutron emitter and the beam pulse forming system, establishing a PIC (peripheral interface controller) simulation model by utilizing the beam line design scheme and continuously optimizing the set parameters of the PIC simulation model, ensures the accuracy of the established PIC simulation model and provides powerful data support for the design of the beam nanosecond pulse forming system.
In order to achieve the purpose, the invention adopts the technical scheme that:
a beam nanosecond pulse forming system parameter optimization simulation design method specifically comprises the following steps:
s1: establishing a beam line design scheme of a pulse neutron generator and a beam pulse forming system thereof;
s2: establishing a PIC simulation model according to the harness design scheme established in the step S1;
s3: setting simulation parameters of the beam pulse forming system according to the PIC simulation model, and calculating a result;
s4: verifying the calculation result of the simulation model, and adjusting the model if the verification fails; if the verification is passed, the construction of the PIC simulation model prototype is completed;
s5: and repeating the steps S3 and S4, and optimizing the PIC simulation model of the beam current pulse forming system until the PIC simulation model has enough precision to design the beam current nanosecond pulse forming system.
The pulse neutron generator in the step S1 comprises a high-voltage platform, an ion source, an accelerating tube, a ground electrode, a three-unit four-pole magnetic lens, a switch magnet, a solenoid lens, a beam cutter, a beam buncher, a power supply system and a rotating target, wherein the beam cutter consists of a pair of parallel scanning plates and a beam selecting flange, and the beam buncher adopts a double-gap bunching structure; the beam pulse forming system comprises a beam cutter, a beam buncher and a power supply system.
The specific working process of the pulse neutron generator is as follows: deuterium beam generated by the ion source is accelerated to 400keV energy through an accelerating tube, the energy is transversely focused through a three-unit quadrupole magnetic lens and deflected by a switch magnet, the beam enters a pulse beam line, the beam enters a beam cutter after being transversely focused through the three-unit quadrupole magnetic lens, the beam is scanned and advances under the action of a scanning plate high-frequency electric field in the beam cutter, a beam selecting flange prevents the beam which is scanned to the outside of a beam selecting aperture, a long pulse beam group is formed by partial beam of the beam selecting aperture, a longitudinal focus is formed at a rotating target position after the long pulse beam group is longitudinally focused by the beam cutter, and the beam group is transversely focused by a solenoid lens.
The initial parameters of the PIC simulation model in step S3 are: the mass of deuterium ion is 2, the charge amount is 1, the energy is 400keV, the beam intensity is 0.25mA, and the beam diameter is 4 mm.
The parallel scanning plate and the beam selecting flange are both made of stainless steel materials, the parallel scanning plate comprises an upper scanning plate and a lower scanning plate, a high-frequency electric field is applied to the upper scanning plate, the lower scanning plate is grounded, so that the high-frequency electric field is formed between the upper scanning plate and the lower scanning plate, the beam selecting flange is grounded, sine high-frequency voltage V (t) is applied to the upper scanning plate, and the expression of the sine high-frequency voltage V (t) is sine high-frequency voltage V (t)
V(t)＝V(0)sin(ωt)
In the formula: v (V) ((0) The high frequency voltage amplitude, ω is the angular frequency, and t is the time.
The cylindrical electrodes in the middle of the buncher are connected with a high-frequency power supply, the cylindrical electrodes on the two sides are respectively grounded, and the electrodes are made of stainless steel materials. High-frequency voltage V of intermediate electrode of beam bunching deviceb(t) is expressed as
Vb(t)＝Vb0sin(ωbt+φ)
In the formula: vb0Is the amplitude of the high-frequency voltage, omegabIs the angular frequency, t is the time, and phi is the initial phase.
Compared with the prior art, the invention has the following beneficial effects:
according to the beam line design method, the beam line design scheme of the pulse neutron emitter and the beam pulse forming system is established, the PIC simulation model is established by utilizing the beam line design scheme, the reliability of the calculation result of the simulation model is verified according to continuous optimization of the set parameters of the PIC simulation model, the accuracy of the established PIC simulation model is guaranteed, and powerful data support is provided for the design of the beam nanosecond pulse forming system.
Drawings
FIG. 1 is a schematic diagram of a nanosecond pulsed DD/DT neutron generator according to an embodiment of the invention.
Fig. 2 is a schematic structural diagram of a nanosecond pulse beam shaping system in an embodiment of the invention.
Fig. 3 is a time-space evolution process of the pulse beam current in the beam cutter in the embodiment of the invention.
FIG. 4 is a graph illustrating experimental results of the relationship between the amplitude and the pulse width of the sinusoidal high frequency voltage in the embodiment of the present invention.
FIG. 5 shows the instantaneous intensity Ey of the electric field of the beam cutter along the X-axis in the Y-direction according to the embodiment of the present invention.
FIG. 6 shows the instantaneous intensity Ex of the electric field of the beam condenser along the X-axis electric field intensity in the X-direction according to the embodiment of the present invention.
FIG. 7 is a time-space evolution of a deuterium beam from an entrance beam splitter to a collector in an embodiment of the present invention.
Fig. 8 is a schematic diagram of collecting temporal structure information of pulse clusters on an electrode and beam intensity in the embodiment of the invention.
Detailed Description
The present invention will now be described in detail with reference to the following detailed description and accompanying drawings, wherein the present invention will be described by way of illustration and description, but not by way of limitation.
Example 1
A beam nanosecond pulse forming system parameter optimization simulation design method specifically comprises the following steps:
1. simulation model
1.1 Beam pulse shaping System scheme
A beam line design scheme of a nanosecond pulse DD/DT neutron generator shown in figure 1 is established, and main components of the beam line design scheme comprise a high-voltage platform, an ion source, an accelerating tube, a ground electrode, a three-unit four-pole magnetic lens, a switch magnet, a solenoid lens, a beam cutter, a beam buncher, a rotating target and the like. The beam pulse shaping system mainly comprises a beam cutter, a beam buncher, a power supply system and the like, as shown in fig. 2.
The specific working process of the pulse neutron generator is as follows: deuterium beam generated by the ion source is accelerated to 400keV energy through an accelerating tube, the energy is transversely focused through a three-unit quadrupole magnetic lens and deflected by a switch magnet, the beam enters a pulse beam line, the beam enters a beam cutter after being transversely focused through the three-unit quadrupole magnetic lens, the beam is scanned and advances under the action of a scanning plate high-frequency electric field in the beam cutter, a beam selecting flange prevents the beam which is scanned to the outside of a beam selecting aperture, a long pulse beam group is formed by partial beam of the beam selecting aperture, a longitudinal focus is formed at a rotating target position after the long pulse beam group is longitudinally focused by the beam cutter, and the beam group is transversely focused by a solenoid lens.
1.2 simulation parameter settings
A PIC simulation model will be built based on the beam pulse shaping system shown in fig. 1-2. In the PIC simulation, the initial parameters of the deuterium beam current are set as: the mass of deuterium ion is 2, the charge amount is 1, the energy is 400keV, the beam intensity is 0.25mA, and the beam diameter is 4 mm. The simulation parameters of the beam cutter and the beam buncher are as follows, respectively.
1.2.1 Beam cutter parameters
The beam cutter consists of a pair of parallel scanning plates and a beam selecting flange, as shown in fig. 1, the parallel scanning plates and the beam selecting flange are both made of stainless steel materials, and the parallel scanning plates comprise an upper scanning plate and a lower scanning plate. The upper scanning plate of the beam cutter applies a high-frequency electric field, the lower scanning plate is grounded, so that the high-frequency electric field is formed between the upper scanning plate and the lower scanning plate, the beam selecting flange is grounded, the upper scanning plate applies a sine high-frequency voltage V (t), and the expression is
V(t)＝V(0)sin(ωt)
In the formula: v (V) ((0) The high frequency voltage amplitude, ω is the angular frequency, and t is the time.
The structure of the beam cutter and the high-frequency voltage parameters are shown in table 1, respectively.
TABLE 1 Beam cutter configuration and high frequency Voltage parameters
| Length/cm of |
20 |
| Gap/cm between upper and |
2 |
| Beam selection flange aperture/ |
3 |
| Distance/cm between scanning plate and beam selecting flange | 240 |
| High frequency voltage amplitude V(0)/ |
1 |
| High frequency voltage angular frequency omega/ |
10 |
1.2.2 buncher parameters
The buncher adopts a double-gap bunching structure, as shown in fig. 1, a cylindrical electrode in the middle of the buncher is connected with a high-frequency power supply, cylindrical electrodes on two sides of the buncher are respectively grounded, and the electrodes are made of stainless steel materials. High-frequency voltage V of intermediate electrode of beam bunching deviceb(t) is expressed as
Vb(t)＝Vb0sin(ωbt+φ)
In the formula: vb0Is the amplitude of the high-frequency voltage, omegabIs the angular frequency, t is the time, and phi is the initial phase.
The beam buncher configuration and high frequency voltage parameters are shown in table 2, respectively.
TABLE 2 Beam buncher configuration and high frequency voltage parameters
| High-frequency high-voltage electrode length/cm | 46.5 |
| High-frequency high-voltage electrode inner radius/ |
2 |
| Left side grounded cylinder electrode length/cm | 7.9 |
| Length/cm of right side grounding cylinder electrode | 7.9 |
| Gap/cm between high-frequency electrode and left and right grounding electrodes | 2.1 |
| High frequency voltage amplitude Vb0/ |
30 |
| Angular frequency omega of high frequency voltageb/ |
40 |
| High frequency voltage initial phase phi/rad | 7π16 |
1.3 simulation model verification
To verify the reliability of the simulation model calculation results, a PIC simulation model of the beam cutter was established based on the experimental data of the beam cutter, as shown in fig. 3. Fig. 3 shows the transmission of the beam current in the beam cutter, and it can be seen that the pulse beam cluster is formed after the beam selecting flange is acted by the beam cutter. According to the experimental data of the beam cutter, the pulse width of the pulse beam group is calculated by simulation when the amplitudes of the sinusoidal high-frequency voltage of the parallel scanning plate are respectively 1, 2, 3 and 4kV, and the result is shown in fig. 4. As can be seen from fig. 4, the simulation result is basically consistent with the theoretical result, and has the same variation trend as the experimental data. Simulation results show that the PIC simulation model has enough precision to design a beam nanosecond pulse forming system.
2 simulation results
2.1 electric field
The beam cutter is loaded with high-frequency sinusoidal voltage, and the instantaneous electric field distribution and the electric field intensity value at a certain moment are observed. By the procedure, the instant of the component Ey of the electric field intensity in the Y direction along the axis X is observedThe simulation results are shown in FIG. 5. As can be seen from FIG. 5, at a time of 158.426ns, from 300 to 500mm along the axis X, the value of the component Ey of the high-frequency electric field in the Y direction is about-5X 104V/m, the minus sign indicates the negative direction of the electric field along the Y axis. The fringe of the beam cutter is provided with a fringe electric field, the fringe electric field rapidly descends on two sides of the beam cutter, the distance between the fringe electric field and the left and right edges of a scanning plate of the beam cutter is about 30mm, and the electric field intensity Ey values are respectively from-5 multiplied by 104V/m drops to-1X 104V/m, decreased by about 80%.
The beam buncher is loaded with high-frequency sinusoidal voltage, and the instantaneous electric field distribution and the electric field intensity value at a certain moment are observed. By the program, the distribution and the magnitude of the component Ex in the X direction of the electric field intensity along the X axis are given, and the simulation result is shown in fig. 6. As can be seen from FIG. 6, the maximum value of Ex between the left ground electrode and the middle high-frequency voltage electrode at the time of 3.301ns is about-1.1X 106V/m, the negative sign indicates that the direction of the electric field points to the direction of the negative X axis, and dispersed electric fields are distributed on two sides of the gap and decrease in an exponential form; the maximum value of Ex between the right ground electrode and the intermediate high-frequency voltage electrode is about 1.1X 106V/m, the direction of the electric field points to the positive X-axis direction, and dispersed electric fields are distributed on two sides of the gap and decrease in an exponential manner; the electric field strength values are 0 in the left and right grounding electrodes and the high-frequency high-voltage electrode.
2.2 Beam Transmission
Through PIC simulation, the time-space evolution process of the direct-current deuterium beam from entering the beam cutter to reaching the collector is observed, and the time-space evolution simulation result of the deuterium beam at 1.994us is shown in figure 7. As can be seen from fig. 7, one beam of the direct current D beam is transmitted to the beam cutter, and after the action of the high-frequency electric field of the beam cutter, the beam evolves to a beam with sine wave-shaped transmission in the drift region, and after the action of the beam selecting flange, a part of the beam passing through the beam selecting flange forms a long pulse beam group, and the rest of the beams are blocked by the beam selecting flange and lost. And then, the long pulse beam group enters the beam bunching device after passing through a section of drift interval, and finally forms a short pulse beam group after passing through a section of drift interval after the long pulse beam group is longitudinally focused by the double-gap beam bunching device and is received by the collector.
2.3 pulse Beam characteristics
Through simulation, the time structure information and the beam intensity of the pulse beam group on the collector electrode after the deuterium direct current beam is acted by the pulse forming system are given, and the simulation result is shown in fig. 8. As can be seen from fig. 8, the pulse width of the pulse beam is about 5ns, the repetition frequency is about 3.2MHz, and the peak current of the beam is about 1.3mA, which reaches the preliminary design index of the designed beam pulse shaping system.
The technical solutions provided by the embodiments of the present invention are described in detail above, and the principles and embodiments of the present invention are explained in the present document by using specific examples, and the descriptions of the embodiments are only used to help understanding the principles of the embodiments of the present invention.
Claims (6)
1. A beam nanosecond pulse forming system parameter optimization simulation design method is characterized by specifically comprising the following steps:
s1: establishing a beam line design scheme of a pulse neutron generator and a beam pulse forming system thereof;
s2: establishing a PIC simulation model according to the harness design scheme established in the step S1;
s3: setting simulation parameters of the beam pulse forming system according to the PIC simulation model, and calculating a result;
s4: verifying the calculation result of the simulation model, and adjusting the model if the verification fails; if the verification is passed, the construction of the PIC simulation model prototype is completed;
s5: and repeating the steps S3 and S4, and optimizing the PIC simulation model of the beam current pulse forming system until the PIC simulation model has enough precision to design the beam current nanosecond pulse forming system.
2. The method for parameter optimization simulation design of beam nanosecond pulse shaping system according to claim 1, wherein the pulsed neutron generator in step S1 comprises a high-voltage platform, an ion source, an accelerating tube, a ground electrode, a three-unit quadrupole magnetic lens, a switching magnet, a solenoid lens, a beam cutter, a beam buncher, a power supply system and a rotating target, wherein the beam cutter comprises a pair of parallel scanning plates and a beam selecting flange, and the beam buncher adopts a double-gap beam bunching structure; the beam pulse forming system comprises a beam cutter, a beam buncher and a power supply system.
3. The method for parameter optimization simulation design of the beam nanosecond pulse shaping system according to claim 2, wherein the specific working process of the pulse neutron generator is as follows: deuterium beam generated by the ion source is accelerated to 400keV energy through an accelerating tube, the energy is transversely focused through a three-unit quadrupole magnetic lens and deflected by a switch magnet, the beam enters a pulse beam line, the beam enters a beam cutter after being transversely focused through the three-unit quadrupole magnetic lens, the beam is scanned and advances under the action of a scanning plate high-frequency electric field in the beam cutter, a beam selecting flange prevents the beam which is scanned to the outside of a beam selecting aperture, a long pulse beam group is formed by partial beam of the beam selecting aperture, a longitudinal focus is formed at a rotating target position after the long pulse beam group is longitudinally focused by the beam cutter, and the beam group is transversely focused by a solenoid lens.
4. The method for parameter optimization simulation design of beam nanosecond pulse shaping system according to claim 1, wherein the initial parameters of the PIC simulation model in step S3 are: the mass of deuterium ion is 2, the charge amount is 1, the energy is 400keV, the beam intensity is 0.25mA, and the beam diameter is 4 mm.
5. The method for optimizing simulation design of parameters of beam nanosecond pulse shaping system according to claim 2, wherein the method comprises the following steps: the parallel scanning plate and the beam selecting flange are both made of stainless steel materials, the parallel scanning plate comprises an upper scanning plate and a lower scanning plate, a high-frequency electric field is applied to the upper scanning plate, the lower scanning plate is grounded, so that the high-frequency electric field is formed between the upper scanning plate and the lower scanning plate, the beam selecting flange is grounded, sine high-frequency voltage V (t) is applied to the upper scanning plate, and the expression of the sine high-frequency voltage V (t) is sine high-frequency voltage V (t)
V(t)＝V(0)sin(ωt)
In the formula: v(0)Is the amplitude of the high frequency voltage, omega is the angular frequency, t is the timeAnd (3) removing the solvent.
6. The method for optimizing simulation design of parameters of beam nanosecond pulse shaping system according to claim 2, wherein the method comprises the following steps: the cylindrical electrodes in the middle of the buncher are connected with a high-frequency power supply, the cylindrical electrodes on the two sides are respectively grounded, and the electrodes are made of stainless steel materials. High-frequency voltage V of intermediate electrode of beam bunching deviceb(t) is expressed as
Vb(t)＝Vb0sin(ωbt+φ)
In the formula: vb0Is the amplitude of the high-frequency voltage, omegabIs the angular frequency, t is the time, and phi is the initial phase.
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| US20160203245A1 (en) * | 2015-01-14 | 2016-07-14 | State Grid Corporation Of China | Method for simulating wind field of extreme arid region based on wrf |
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