CN113671748B - Liquid crystal display device having a light shielding layer - Google Patents

Liquid crystal display device having a light shielding layer Download PDF

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Publication number
CN113671748B
CN113671748B CN202111004629.XA CN202111004629A CN113671748B CN 113671748 B CN113671748 B CN 113671748B CN 202111004629 A CN202111004629 A CN 202111004629A CN 113671748 B CN113671748 B CN 113671748B
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thin film
film transistor
photosensitive element
branch part
liquid crystal
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CN113671748A (en
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欧甜
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136222—Colour filters incorporated in the active matrix substrate
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/3406—Control of illumination source
    • G09G3/3413—Details of control of colour illumination sources

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Liquid Crystal (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Geometry (AREA)

Abstract

The present invention provides a liquid crystal display device, comprising: a thin film transistor substrate defining a thin film transistor array region and a wiring region surrounding the thin film transistor array region; a photosensitive element disposed in the wiring region; the color filter substrate is arranged opposite to the thin film transistor substrate and comprises a shading layer corresponding to the wiring area, and a photosensitive element opening is defined in the area of the shading layer corresponding to the photosensitive element; the control unit is electrically connected with the photosensitive element on the thin film transistor substrate; the backlight module is arranged on one side of the thin film transistor substrate, which is away from the color filter substrate, and is connected with the control unit; the photosensitive element is configured to generate an output voltage to the control unit according to the illumination intensity so as to control the brightness of the backlight module.

Description

Liquid crystal display device having a light shielding layer
The invention relates to the technical field of display, in particular to a liquid crystal display device with a photosensitive element.
Background
The ambient light sensor can sense the intensity of light of the surrounding environment and is widely used in electronic devices such as mobile phones, tablet computers, notebook computer liquid crystal televisions and the like.
Because the indoor light is dim, the pupils of eyes of people are enlarged, and if the screen brightness of the electronic product is too high, people feel uncomfortable; conversely, when people go from indoor to outdoor and the sun light is strong, if the screen brightness of the electronic product is not improved correspondingly, the eyes of the people cannot see the screen clearly. The ambient light sensor can adjust the screen brightness of the electronic device to achieve the proper brightness acceptable to human eyes, and the element can not only save the energy consumption of the electronic device, but also prolong the battery life of the electronic device.
Current electronic devices, such as thin-film transistor (TFT) lcd panels, are usually equipped with an external ambient light sensor to sense the ambient light intensity and adjust the backlight intensity. However, the external ambient light sensor requires an additional hole on the display panel module, and the sensor module is disposed in the hole, which requires a complicated process. In addition, the additional openings of the electronic device also affect the aesthetic appearance of the electronic device. Therefore, the existing lcd device equipped with the external ambient light sensor requires a complicated process, and the problem of the electronic device being affected by the hole formed in the display panel module needs to be further improved.
Disclosure of Invention
The invention uses the characteristic that the amorphous silicon (a-Si) semiconductor generates photo-generated carriers under the irradiation of light and the self conductivity of the photo-generated carriers is changed, and uses the photo-generated carriers as photosensitive elements, and then outputs V at a voltage division node by connecting a resistor element voltage division circuit in series out An integrated circuit, such as an advanced process control (advanced process control, APC) chip, which is a chip capable of converting analog signals to pulse width modulated (pulse width modulation, PWM) signals, is then connected. The invention integrates the ambient light sensor into the liquid crystal display panel in a low-cost mode, does not need to additionally open holes on the display module, or only needs to open a micro-opening (micron-sized aperture) on the shading layer of the color filter substrate, and the micro-opening cannot be perceived by naked eyes. Such a solution may be applied to narrow bezel or full screen liquid crystal display devices. The liquid crystal display device after integrating the ambient light sensor can sense the light intensity of the environment, so that the brightness of the backlight module is adjusted to realize a better display effect.
The present invention provides a liquid crystal display device including: a thin film transistor substrate defining a thin film transistor array region and a wiring region surrounding the thin film transistor array region; a photosensitive element disposed in the wiring region; the color filter substrate is arranged opposite to the thin film transistor substrate and comprises a shading layer corresponding to the wiring area, and a photosensitive element opening is defined in the area of the shading layer corresponding to the photosensitive element; the control unit is electrically connected with the photosensitive element on the thin film transistor substrate; the backlight module is arranged on one side of the thin film transistor substrate, which is away from the color filter substrate, and is connected with the control unit; the photosensitive element is configured to generate an output voltage to the control unit according to the illumination intensity so as to control the brightness of the backlight module.
In an embodiment of the invention, the light shielding layer further defines a camera module opening, the photosensitive element opening is disposed adjacent to the camera module opening, and the photosensitive element is disposed on the wiring area corresponding to the photosensitive element opening.
The present invention provides another liquid crystal display device including: a thin film transistor substrate defining a thin film transistor array region and a wiring region surrounding the thin film transistor array region; a photosensitive element disposed in the wiring region; the color filter substrate is arranged opposite to the thin film transistor substrate, the color filter substrate comprises a shading layer corresponding to the wiring area, the shading layer is defined with a camera module opening, the camera module opening comprises an extension area, and the photosensitive element is arranged on the thin film transistor substrate corresponding to the extension area; a liquid crystal layer sandwiched between the thin film transistor substrate and the color filter substrate; the printed circuit board is connected with the thin film transistor substrate, and is provided with an integrated circuit and a resistance element, and the resistance element is electrically connected with the photosensitive element and connected with the integrated circuit; the backlight module is arranged on one side of the thin film transistor substrate, which is away from the color filter substrate, and is connected with the integrated circuit; the photosensitive element and the resistor element are configured to generate an output voltage to the integrated circuit according to illumination intensity so as to control the brightness of the backlight module.
In an embodiment of the invention, the printed circuit board is connected to the tft substrate through a flexible circuit board, and the printed circuit board is fixed to the bottom of the backlight module.
In an embodiment of the invention, the integrated circuit is configured to convert the output voltage into a pulse width modulation signal, and the pulse width modulation signal is connected to the backlight module to control the brightness of the backlight module.
In an embodiment of the present invention, the liquid crystal display device includes:
a shielding metal layer; an insulating layer arranged on the shielding metal layer; an amorphous silicon semiconductor layer disposed on the insulating layer; and an electrode layer disposed on the amorphous silicon semiconductor layer.
In an embodiment of the invention, the electrode layer includes a source electrode and a drain electrode extending to two ends respectively, and the shielding metal layer is floating.
In an embodiment of the invention, the electrode layer includes a first branch portion, and a second branch portion and a third branch portion respectively disposed at two sides of the first branch portion, wherein the first branch portion is connected to the drain electrode, and the second branch portion and the third branch portion are connected to the source electrode.
In an embodiment of the invention, the first supporting portion includes a uniaxial bidirectional tooth comb structure, the second supporting portion and the third supporting portion include a uniaxial unidirectional tooth comb structure, and a plurality of tooth combs of the uniaxial unidirectional tooth comb structure of the second supporting portion and the third supporting portion are respectively staggered with a plurality of tooth combs on two sides of the uniaxial bidirectional tooth comb structure of the first supporting portion.
In an embodiment of the invention, the equivalent width-to-length ratio of the photosensitive element is 2000/5.
The liquid crystal display device of the invention is provided with a photosensitive element in the wiring area of the thin film transistor substrate, and outputs V at a voltage division node by connecting a resistor element voltage division circuit in series out And then, the APC chip is connected, the APC chip can convert the analog signal into a pulse width modulation (pulse width modulation, PWM) signal, so that the ambient light sensor is integrated into the liquid crystal display panel, no additional opening is needed on the display module, or only a micro opening (micron-sized aperture) is needed to be formed in the shading layer of the color filter substrate, and the solution can be applied to a narrow-frame or full-screen liquid crystal display. The LCD after integrating the ambient light sensor can sense the light intensity of the environment, therebyThe brightness of the backlight module is adjusted to achieve better display effect, and meanwhile, the problems that the existing liquid crystal display device is provided with an external ambient light sensor, a complicated process flow is required, and the appearance of the electronic device is affected due to the fact that holes are formed in the module are solved.
Drawings
Fig. 1 is a schematic top view of a color filter substrate of a liquid crystal display device according to a first embodiment of the present invention;
fig. 2 is a schematic cross-sectional view of a liquid crystal display device according to a first embodiment of the present invention;
fig. 3 is a schematic cross-sectional view of a liquid crystal display device according to a second embodiment of the present invention;
FIG. 4 is a schematic top view of a color filter substrate of a liquid crystal display device according to a third embodiment of the present invention;
fig. 5 is a schematic cross-sectional view of a liquid crystal display device according to a third embodiment of the present invention;
FIG. 6 is a schematic top view of a photosensor according to the present invention;
FIG. 7 is a schematic view of a partial cross-sectional structure of a photosensitive element according to the present invention;
FIG. 8 is an enlarged schematic view of a portion of the photosensitive element of FIG. 6 according to the present invention;
FIG. 9 is a schematic circuit diagram of a photosensitive element, a resistive element, and an integrated circuit according to the present invention;
FIG. 10 is a diagram of an APC chip principle and PWM output signal according to the present invention; and
fig. 11 is a graph showing the measured resistance of the photosensitive element according to the present invention at W/l=2000/5 under each illuminance condition.
Detailed Description
The liquid crystal display device and the photosensitive element provided by the embodiment of the invention are described in detail below with reference to the accompanying drawings. It will be apparent that the described embodiments are only some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The following description of the embodiments refers to the accompanying drawings, which illustrate specific embodiments that can be used to practice the present application. The directional terms mentioned in this application, such as [ upper ], [ lower ], [ front ], [ rear ], [ left ], [ right ], [ inner ], [ outer ], [ side ], etc., are only referring to the directions of the attached drawings. Accordingly, directional terminology is used to describe and understand the application and is not intended to be limiting of the application. In the drawings, the thickness of some layers and the size of some elements are exaggerated for clarity of understanding and ease of description. I.e. the dimensions and thickness of each element shown in the drawings are arbitrarily shown, but the present application is not limited thereto.
Referring to fig. 1, fig. 1 is a schematic top view of a color filter substrate 200 of a liquid crystal display device according to a first embodiment of the invention. The color filter substrate 200 includes a light shielding layer 201 corresponding to a wiring region, a photosensitive element opening 202 is defined in a corresponding region of the light shielding layer 201 corresponding to the photosensitive element 101, and the photosensitive element 101 is disposed on the thin film transistor substrate corresponding to the region of the photosensitive element opening 202. Specifically, the size of the photosensor 101 is about 2000 micrometers long and 30 micrometers wide, and the photosensor opening 202 shown in fig. 1 is circular, and may be configured to be square or the like in accordance with the shape of the photosensor 101 in a specific application, which is not limited thereto. In fig. 1, the light shielding layer 201 further defines an image capturing module opening 204, and the photosensitive element opening 202 is disposed adjacent to the image capturing module opening 204. The size of the photosensor opening 202 is not limited as long as it is close to or up to the size of the photosensor 101. In one embodiment, the photosensor opening 202 is sized to be nearly micron-sized (tens to thousands of microns) on the order of a sub-millimeter, with little or no visible presence.
Referring to fig. 2, fig. 2 is a schematic cross-sectional view of a liquid crystal display device 10 according to a first embodiment of the invention. The liquid crystal display device 10 includes: a thin film transistor substrate 100, the thin film transistor substrate 100 defining a thin film transistor array region 100a and a wiring region 100w surrounding the thin film transistor array region; a photosensitive element 101 disposed on the thin film transistor substrate 100 in the wiring area 100w, wherein a plurality of thin film transistors 102 are disposed in the thin film transistor array area 100a, a buffer layer 110 is further disposed on the thin film transistor substrate 100, and a plurality of pixel electrodes 103 are disposed on the buffer layer 110, wherein the buffer layer 110 is hollowed out at a position corresponding to the photosensitive element 101 so that the photosensitive element 101 is disposed on the thin film transistor substrate 100, and the photosensitive element 101 is surrounded by the buffer layer 110, the buffer layer 110 can prevent reflected light in the display panel from irradiating the photosensitive element 101, thereby interfering with the photosensitive element 101 to detect ambient light; a color filter substrate 200 disposed opposite to the thin film transistor substrate 100, wherein the color filter substrate 200 includes a light shielding layer 201 corresponding to the wiring area 100w, and a photosensitive element opening 202 is defined in a region area of the light shielding layer 201 corresponding to the photosensitive element 101; a liquid crystal layer 300 interposed between the thin film transistor substrate 100 and the color filter substrate 200; a control unit including a printed circuit board 500, an integrated circuit 502 and a resistor element 503, wherein the integrated circuit 502 and the resistor element 503 are disposed on the printed circuit board 500, the resistor element 503 is electrically connected to the photosensitive element 101 and connected to the integrated circuit 502, and the printed circuit board 500 is connected to the tft substrate 100; and a backlight module 400 disposed on a side of the tft substrate 100 away from the color filter substrate 200, wherein the backlight module 400 is connected to the integrated circuit 502; the photosensitive element 101 and the resistor element 503 are configured to generate an output voltage to the integrated circuit 502 according to the illumination intensity to control the brightness of the backlight module 400.
Referring to fig. 3, fig. 3 is a schematic cross-sectional view of a liquid crystal display device 10 according to a second embodiment of the invention. The liquid crystal display device 10 includes: a thin film transistor substrate 100, wherein the thin film transistor substrate 100 defines a thin film transistor array region 100a and a wiring region 100w surrounding the thin film transistor array region, the thin film transistor array region 100a is provided with an array formed by a plurality of thin film transistors 102, the thin film transistor substrate 100 is further provided with a buffer layer 110, and a plurality of pixel electrodes 103 are disposed on the buffer layer 110; a photosensor 101 disposed on the thin film transistor substrate 100 in the wiring region 100w; a color filter substrate 200 disposed opposite to the thin film transistor substrate 100, wherein the color filter substrate 200 includes a light shielding layer 201 corresponding to the wiring area 100w, and a photosensitive element opening is defined in a region area of the light shielding layer 201 corresponding to the photosensitive element 101; a liquid crystal layer 300 interposed between the thin film transistor substrate 100 and the color filter substrate 200; the control unit comprises a printed circuit board 500, an integrated circuit 502 and a resistance element 503, wherein the integrated circuit 502 and the resistance element 503 are arranged on the printed circuit board 500, the printed circuit board 500 is connected with the thin film transistor substrate 100, the resistance element 503 is electrically connected with the photosensitive element 101 and connected with the integrated circuit 502, and the backlight module 400 is connected with the integrated circuit 502; the photosensitive element 101 and the resistor element 503 are configured to generate an output voltage to the integrated circuit 502 according to the illumination intensity to control the brightness of the backlight module 400. The present embodiment is different from the first embodiment in that the printed circuit board 500 is connected to the tft substrate 100 through a flexible circuit board 501, such as a tape auto-fed bonding (TAB) circuit board, and the printed circuit board 500 is fixed to the bottom of the backlight module 400. This arrangement is for realizing a narrow bezel or a full screen liquid crystal display device.
Referring to fig. 4, fig. 4 is a schematic top view of a color filter substrate 200' of a liquid crystal display device according to a third embodiment of the invention. The color filter substrate 200' includes a light shielding layer 201' corresponding to the wiring area, the light shielding layer 201' defines a camera module opening 204', the camera module opening 204' includes an extension area 2041, and the photosensitive element 101 is disposed on the thin film transistor substrate corresponding to the extension area 2041. As before, the photosensitive element 101 has dimensions of about 2000 microns long and 30 microns wide. In this embodiment, the photosensor 101 may be disposed on the tft substrate in the extension region 2041 corresponding to the camera module opening 204', and no additional openings are required to be formed on the light shielding layer 201', and only the extension region 2041 is required to be further defined by the original camera module opening 204 'on the light shielding layer 201'. The proposal can simplify the manufacturing process, save the cost and can not influence the beautiful appearance of the liquid crystal display device.
Referring to fig. 5, fig. 5 is a schematic cross-sectional view of a liquid crystal display device according to a third embodiment of the invention. The liquid crystal display device 10 includes: a thin film transistor substrate 100, the thin film transistor substrate 100 defining a thin film transistor array region 100a and a wiring region 100w surrounding the thin film transistor array region 100 a; a photosensor 101 disposed on the thin film transistor substrate 100 in the wiring region 100w; a color filter substrate 200 disposed opposite to the tft substrate 100, wherein the color filter substrate 200 includes a light shielding layer 201 corresponding to the wiring area 100w, the light shielding layer 201 has a camera module opening 204 opened for the light-taking requirement of the camera module 203, the camera module opening 204 further passes through the buffer layer 110, the tft substrate 100 and the backlight module 400, the camera module opening 204 defines an extension area 2041, and the photosensor 101 is disposed on the tft substrate 100 corresponding to the extension area 2041; a liquid crystal layer 300 interposed between the thin film transistor substrate 100 and the color filter substrate 200; a printed circuit board 500, the printed circuit board 500 is connected to the tft substrate 100 through a tape auto-fed bonding (TAB) circuit board 501, the printed circuit board 500 is fixed to the bottom of the backlight module 400, the printed circuit board 500 is provided with an integrated circuit 502 and a resistor element 503, and the resistor element 503 is electrically connected to the photosensitive element 101 and connected to the integrated circuit 502; and a backlight module 400 disposed on a side of the tft substrate 100 away from the color filter substrate 200, wherein the backlight module 400 is connected to the integrated circuit 502; the photosensitive element 101 and the resistor element 503 are configured to generate an output voltage to the integrated circuit 502 according to the illumination intensity to control the brightness of the backlight module 400. As described above, in this embodiment, the photosensitive element 101 may be disposed on the tft substrate 100 corresponding to the camera module opening 204, without additionally forming a hole in the module, or forming an additional photosensitive element opening in the light shielding layer 201, and only the original camera module opening 204 on the light shielding layer 201 needs to be further defined to an extension region 2041. The proposal can simplify the manufacturing process, save the cost and can not influence the beautiful appearance of the liquid crystal display device.
Referring to fig. 6 and 7, fig. 6 is a schematic top view of the photosensitive element 101 according to the present invention. The electrode layer of the photosensor 101 includes a source electrode 1011S and a drain electrode 1011D extending to both ends, respectively, and the resistance value of the photosensor 101 can reach 200mΩ when in a dark or no-light state, and the source electrode 1011S and the drain electrode 1011D are non-conductive to each other, which are spatially connected to the amorphous silicon semiconductor layer 1012. In the dark state, the photosensitive element exhibits a large resistance state because the amorphous silicon semiconductor layer 1012 has few intrinsic carriers. When the environment is in a bright state, the amorphous silicon semiconductor layer 1012 generates photo-generated carriers which can conduct electricity to turn on the source electrode 1011S and the drain electrode 1011D, i.e., appear as
Referring to fig. 7, fig. 7 is a schematic partial cross-sectional view of a photosensitive element according to the present invention. The photosensitive element includes: a masking metal layer 1014; an insulating layer 1013 disposed on the shielding metal layer 1014; an amorphous silicon semiconductor layer 1012 provided on the insulating layer 1013; and an electrode layer 1011 disposed on the amorphous silicon semiconductor layer 1012. Wherein the amorphous silicon semiconductor layer 1012 is a core part of the photosensitive element 101, when light irradiates the amorphous silicon semiconductor layer 1012, the energy of photons is equal to or greater than the forbidden bandwidth of the amorphous silicon semiconductor layer 1012, so that electrons in the valence band absorb photons and then enter the conduction band to generate electron-hole pairs, and thus a large number of photo-generated carriers are generated. The shielding metal layer 1014 is a gate electrode (gate), which is floating in the device, and is used only for shielding light from the backlight module 400, so as to prevent the photosensitive element from detecting ambient light. Specifically, the insulating layer 1013 is composed of a silicon nitride (SiN) material, and the electrode layer 1011 is specifically a copper electrode.
Fig. 8 is an enlarged schematic view of a partial structure of the photosensor 101 of fig. 6 according to the present invention. Referring to fig. 7, the electrode layer 1011 includes a first branch 10111, a second branch 10112 and a third branch 10113 disposed on the upper and lower sides of the first branch 10111. The first branch 10111 is connected to the drain electrode 1011D, and the second and third branches 10112 and 10113 are connected to the source electrode 1011S. It can be considered that the first branch 10111 is an extension structure of the drain 1011D, and the second branch 10112 and the third branch 10113 are extension structures of the source 1011S. The first support 10111 includes a uniaxial bidirectional tooth comb structure, the second support 10112 and the third support 10113 include a uniaxial unidirectional tooth comb structure, and a plurality of teeth combs of the uniaxial unidirectional tooth comb structure of the second support 10112 and the third support 10113 are respectively staggered with a plurality of teeth combs on two sides of the uniaxial bidirectional tooth comb structure of the first support 10111. Wherein the length (W) of any one of the plurality of teeth combs of the first branch 10111, the second branch 10112, and the third branch 10113 and the distance (L) between any two of the plurality of teeth combs are as shown in fig. 7. The distance (L) between any two of the teeth combs is the channel length. The length (W) of any of the teeth combs, i.e., the channel width. The equivalent aspect ratio of the channels of the photosensor 101 is the sum of W of all the teeth combs, and is preferably equal to 2000/5 of the length L of the upper channel. Under the above-mentioned configuration, the resistance value of the photosensor 101 can reach 200mΩ in an environment without light irradiation, and after light irradiation, the photosensor resistance can be drastically reduced due to a large number of photo-generated carriers generated by the amorphous silicon layer 1012.
Referring to fig. 9, fig. 9 is a schematic circuit diagram of the photosensitive element 101, the resistive element 503, and the integrated circuit 502 according to the present invention, and the integrated circuit 502 is embodied as an advanced process control (advanced process control, APC) chip in the embodiment of the present invention. R is R s For the equivalent resistance of the photosensor 101 integrated in the panel, the photosensor 10 is in the absence of illuminationWhen the W/L of 1 is 2000/5, the resistance value can reach 200MΩ, and after light irradiation, amorphous silicon generates a large amount of photo-generated carriers, and the resistance of the photosensor 101 can be drastically reduced. R is R c For a fixed resistive element 503 to be placed on a printed circuit board (printed circuit board, PCB) or on the tft substrate 100, the resistance is about 5mΩ to about 10mΩ, which may be set according to practical requirements. V (V) s For input voltage, V out For output voltage, according to the principle of resistive voltage division: formula V out ＝R c /(R c +R s )*V s R when in no light or dark state s >>R c ，V out Near 0V. At this time, V out After the integrated circuit 502 is connected, a pulse width modulation (pulse width modulation, PWM) signal with a duty close to 0% is output, and the brightness of the backlight module is reduced. When the ambient light increases, R s Sharply decrease in V at this time out The output PWM signal is increased, and the brightness of the backlight module is lightened, so that the function that the backlight module of the liquid crystal display device adapts to external environment light is realized. Specifically, the APC chip may be a GP9303 type chip, and the GP9303 chip is a converter for converting an Analog signal into a PWM signal, which corresponds to Analog-to-digital converter (ADC) for outputting the PWM signal. The APC chip can linearly convert an analog voltage of 0V to 5V into a PWM signal having a duty cycle of 0% to 100%, and the linear error of the duty cycle is less than 0.5%.
The following is the detailed characteristic data of the GP9303 chip:
analog voltage inputs of 0V to 5V are linearly converted to PWM signal outputs of 0% -100% duty cycle.
The frequency range of the output PWM signal is 1Hz to 1MHz. Outputting a high level of a PWM signal: 5V.
Maximum PWM duty cycle error: <1% (0.5%, 0.1%).
PWM duty cycle linearity error <0.5% (0.2%, 0.1%).
Supply voltage: 8V-40V. Power consumption: <5mA. Start time: <2ms.
Operating temperature: -40 ℃ to 85 ℃ and-40 ℃ to 125 ℃.
The configuration of the APC chip and the PWM output signal chart are shown in fig. 10.
Referring to fig. 11, fig. 11 is a graph showing measured resistance values of the photosensitive element according to the present invention under each illuminance condition in terms of equivalent channel width, length-to-length ratio W/l=2000/5. Wherein the horizontal axis represents illuminance (illumination/Lux) and the vertical axis represents resistance (MΩ). As is clear from the figure, the resistance value of the photosensor drastically decreases with increasing illuminance.
As described above, the embodiment of the invention uses the characteristics of the amorphous silicon semiconductor that generates photo-generated carriers under light irradiation and changes its own conductivity as a photosensitive element, and outputs V at a voltage division node by serially connecting a resistor element voltage division circuit out And then an APC chip is connected in, and the APC chip converts the analog signal into a PWM signal. The invention integrates the ambient light sensor into the liquid crystal display panel in a low-cost mode, does not need to additionally open holes on the display module, or only needs to open a micro-opening (micron-sized aperture) on the shading layer of the color filter substrate, and the micro-opening cannot be perceived by naked eyes. This solution can be applied to narrow bezel or full screen liquid crystal displays. The liquid crystal display after integrating the ambient light sensor can sense the light intensity of the environment, so that the brightness of the backlight module is adjusted to realize a better display effect.
The foregoing is merely a preferred embodiment of the present invention and it should be noted that modifications and adaptations to those skilled in the art may be made without departing from the principles of the present invention, which are intended to be comprehended within the scope of the present invention.

Claims (4)

1. A liquid crystal display device, comprising:
a thin film transistor substrate defining a thin film transistor array region and a wiring region surrounding the thin film transistor array region;
a photosensitive element disposed in the wiring region;
the color filter substrate is arranged opposite to the thin film transistor substrate, the color filter substrate comprises a shading layer corresponding to the wiring area, the shading layer is defined with a camera module opening, the camera module opening comprises an extension area, and the photosensitive element is arranged on the thin film transistor substrate corresponding to the extension area;
a liquid crystal layer sandwiched between the thin film transistor substrate and the color filter substrate;
the printed circuit board is connected with the thin film transistor substrate, and is provided with an integrated circuit and a resistance element, and the resistance element is electrically connected with the photosensitive element and connected with the integrated circuit; and
the backlight module is arranged on one side of the thin film transistor substrate, which is away from the color filter substrate, and is connected with the integrated circuit;
the photosensitive element and the resistor element are configured to generate an output voltage to the integrated circuit according to illumination intensity so as to control the brightness of the backlight module;
the photosensitive element includes:
a shielding metal layer;
an insulating layer arranged on the shielding metal layer;
an amorphous silicon semiconductor layer disposed on the insulating layer; and
an electrode layer disposed on the amorphous silicon semiconductor layer;
the electrode layer comprises a source electrode and a drain electrode which extend to two end parts respectively, and the shielding metal layer is in floating connection;
the electrode layer comprises a first branch part, a second branch part and a third branch part which are respectively arranged at two sides of the first branch part, the first branch part is connected to the drain electrode, and the second branch part and the third branch part are connected to the source electrode;
the first branch part comprises a single-shaft bidirectional tooth comb structure, the second branch part and the third branch part comprise single-shaft unidirectional tooth comb structures, and a plurality of tooth combs of the single-shaft unidirectional tooth comb structures of the second branch part and the third branch part are respectively staggered with a plurality of tooth combs of two sides of the single-shaft bidirectional tooth comb structures of the first branch part.
2. The liquid crystal display device of claim 1, wherein the printed circuit board is connected to the thin film transistor substrate through a flexible circuit board, and the printed circuit board is fixed to the bottom of the backlight module.
3. The liquid crystal display device of claim 2, wherein the integrated circuit is configured to convert the output voltage into a pulse width modulated signal, the pulse width modulated signal being coupled to the backlight module to control brightness of the backlight module.
4. The liquid crystal display device according to claim 1, wherein the photosensitive element has an equivalent aspect ratio of 2000/5.
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