CN207473245U - A kind of display panel - Google Patents
A kind of display panel Download PDFInfo
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- CN207473245U CN207473245U CN201721094612.7U CN201721094612U CN207473245U CN 207473245 U CN207473245 U CN 207473245U CN 201721094612 U CN201721094612 U CN 201721094612U CN 207473245 U CN207473245 U CN 207473245U
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Abstract
The utility model discloses a kind of display panel, including：First substrate；Second substrate, the relatively described first substrate setting of the second substrate；Active switch, the active switch are arranged on the second substrate, and the active switch includes conducting channel；Pixel, the pixel are arranged on the second substrate, and are coupled with the active switch；Chromatic filter layer is formed on the second substrate, corresponding to the location of pixels；Light shield layer, on the first substrate, the light shield layer corresponds to the conducting channel setting of the active switch for the light shield layer setting, and the light shield layer covers the active switch conducting channel, and the light shield layer is made of conductive material；Chip is controlled, is coupled with the light shield layer, for adjusting display panel brightness；Optical sensor, the optical sensor are arranged between first substrate and light shield layer, and so as to fulfill according to environment bright-dark degree adjusting display brightness, the light shield layer on the inside of optical sensor can completely shelter from the backlight at optical sensor.
Description
Technical field
The utility model is related to display technology field, more specifically, being related to a kind of display panel.
Background technology
Display has many merits such as thin fuselage, power saving, radiationless, is widely used.On existing market
Display is largely backlight escope, including display panel and backlight module (backlight module).Display surface
The operation principle of plate is that liquid crystal molecule is placed in the parallel substrate of two panels, and applies driving voltage on two plate bases to control
The light of backlight module is reflected generation picture by the direction of rotation of liquid crystal molecule processed.
Wherein, active switch display (Thin Film Transistor-Liquid Crystal Display, TFT-
LCD) due to performances such as low power consumption, excellent picture quality and higher production yields, gradually occupying at present
The leading position of display field.Equally, active switch display includes display panel and backlight module, and display panel includes the
Two substrates (Color Filter Substrate, CF Substrate, also referred to as colored filter substrate) and active switch first
Substrate (Thin Film Transistor Substrate, TFT Substrate), there are transparent for the relative inner of aforesaid substrate
Electrode.One layer of liquid crystal molecule (Liquid Crystal, LC) is pressed from both sides between two plate bases.Display panel is to liquid crystal point by electric field
The control of son orientation, changes the polarization state of light, and realizes penetrating and stopping for light path by polarizer, realizes the mesh of display
's.The display brightness of display panel is bad according to environment adjusting self-regulation effect.
Utility model content
Display brightness is automatically adjusted more according to ambient brightness the technical problem to be solved by the utility model is to provide a kind of
Good display panel.
The purpose of this utility model is achieved through the following technical solutions：
A kind of display panel, including first substrate, the first substrate includes：
First substrate；
Second substrate, the relatively described first substrate setting of the second substrate；
Active switch, the active switch are arranged on the second substrate, and the active switch includes conducting channel；
Pixel, the pixel are arranged on the second substrate, and are coupled with the active switch；
Chromatic filter layer is formed on the second substrate, corresponding to the location of pixels；
Light shield layer, on the first substrate, the light shield layer corresponds to the conductive ditch of the active switch for the light shield layer setting
Road is set, and the light shield layer covers the active switch conducting channel, and the light shield layer is made of conductive material；
Chip is controlled, is coupled with the light shield layer, for adjusting display panel brightness；
Optical sensor, the optical sensor are arranged between first substrate and light shield layer.
Wherein, the optical sensor includes photodiode.
The area of the PN junction of photodiode is relatively large, and to receive incident light, photodiode is anti-when not having illumination
Extremely faint to electric current, when having illumination, reverse current increases rapidly, and is quick on the draw.
Wherein, the optical sensor includes photodiode.
Photodiode has many advantages, such as that junction capacity is small, the transition time is short, high sensitivity.
Wherein, the first substrate further includes transparency conducting layer, and the optical sensor is arranged on transparency conducting layer and shading
Between layer.
The original design of first substrate is not influenced, and transparency conducting layer does not influence acquisition of the optical sensor to incident light.
Wherein, the first substrate further includes transparency conducting layer, and the photodiode is arranged on transparency conducting layer and screening
Between photosphere, the light shield layer includes metal black matrix, and the coupling of control chip, described transparent described in the metal black Matrix coupling
Conductive layer and two lateral electrodes that metal black matrix is photodiode.
The transparency conducting layer (ITO common electrodes) and metal black matrix B M of first substrate are two lateral electrodes of photodiode,
Metal black matrix B M electrodes access control chip, sets liquid crystal, increases photodiode to aobvious between light shield layer and second substrate
Show that plate thickness influence has little effect, be light using existing transparency conducting layer (ITO common electrodes) and metal black matrix B M
Two lateral electrodes of electric diode, change are small, it is easy to accomplish.
Wherein, the photodiode includes three-layer semiconductor layer, the first layer semiconductor layer of the three-layer semiconductor layer
Outside is directly connected to transparency conducting layer, and metal black square is directly connected on the outside of the third layer semiconductor layer of the three-layer semiconductor layer
Battle array, the three-layer semiconductor slice width degree are less than metal black matrix.
Photodiode clips one layer of intrinsic semiconductor between P-type semiconductor and N-type semiconductor.Because intrinsic layer is opposite
It is high resistance area in P areas and N areas, the internal electric field of such PN junction just substantially concentrates in I layers entirely.In the PN junction of photodiode
Between the very low N-type semiconductor of one layer of concentration of incorporation, it is possible to increase the width of depletion region, reach the influence for reducing diffusion motion,
Improve the purpose of response speed.Since the doping concentration of this doped layer is low, intimate intrinsic (Intrinsic) semiconductor, therefore claim I
Layer, therefore this structure becomes photodiode.It is I layers thicker, almost occupy entire depletion region.The incident light of the overwhelming majority exists
It is absorbed in I layers and generates a large amount of electron-hole pair.It is the very high p-type of doping concentration and N-type semiconductor I layers of both sides, P
Layer and it is N layers very thin, absorb the ratio very little of incident light.Thus light generates drift component in electric current and accounts for leading position, this is with regard to big
Accelerate response speed greatly.Photodiode is made to have many advantages, such as that junction capacity is small, the transition time is short, high sensitivity.
Wherein, the optical sensor is arranged on the edge of the display area of display panel.
The display of display area is not influenced, and the influence to display panel is small, and optical sensor is close to display area, to extraneous ring
It is more accurate that border light obtains, and the connection circuit of optical sensor can be arranged on outside display area, do not influence the display of display panel.
Wherein, the display area of the display panel is equipped with the control circuit of control optical sensor on one side.
Space is saved, will not additionally increase width, is especially suitable for the display panel of narrow frame and Rimless.
Wherein, the optical sensor be arranged on the upper side edge of display panel display area and left and right sides on, it is described
The lower side of display panel display area is equipped with the control circuit of control optical sensor.
Optical sensor is arranged on the upper side edge of display panel display area and can more fully be obtained in left and right sides
External environmental light is taken, acquisition range is wider, reacts sensitiveer comprehensive, and the lower side of display area is equipped with control optical sensor
Control circuit can save space, will not additionally increase width, be especially suitable for the display panel of narrow frame and Rimless.
Wherein, the optical sensor is arranged on the center of the display area.The optic centre of people is in display area
Center, it is most sensitive to the brightness of the position, thus only need this center setting optical sensor can reach
To good dimming effect, and an optical sensor is only needed, cost is also more cheap.
Wherein, the optical sensor is only arranged at any position of the display area of display panel.In appointing for display area
Meaning position can set optical sensor, facilitate setting optical sensor.
What the purpose of this utility model can also be achieved through the following technical solutions：
A kind of display panel, the display panel include：
First substrate；
Second substrate, the relatively described first substrate setting of the second substrate；
Active switch, the active switch are arranged on the second substrate, and the active switch includes conducting channel；
Pixel, the pixel are arranged on the second substrate, and are coupled with the active switch；
Chromatic filter layer is formed on the second substrate, corresponding to the location of pixels；
Light shield layer, on the first substrate, the light shield layer corresponds to the conductive ditch of the active switch for the light shield layer setting
Road is set, and the light shield layer covers the active switch conducting channel,
Optical sensor, the optical sensor are arranged between first substrate and light shield layer, and the width of the optical sensor is small
In or equal to light shield layer width, the optical sensor include photodiode；Transparency conducting layer, the transparency conducting layer setting
On the first substrate, the photodiode is arranged between transparency conducting layer and light shield layer, and the light shield layer includes gold
Belong to black matrix, the metal black Matrix coupling adjusts the control chip of display panel brightness, the transparency conducting layer and metal black
Matrix is two lateral electrodes of photodiode.Optical sensor is equipped between the first substrate and light shield layer of display panel, light passes
The width of sensor is less than the width of light shield layer, and for the first substrate of display panel in face of user, first substrate is transparent substrates, extraneous
Ambient light can penetrate first substrate and enter, and optical sensor can obtain the external environmental light entered by first substrate, so as to
Different electric signals is sent out according to the power of external environmental light, so as to fulfill according to environment bright-dark degree adjusting display brightness, light
There is light shield layer on the inside of sensor, light shield layer width is greater than or equal to the width of optical sensor, and light shield layer can be optical sensor
The backlight at place shelters from completely, and backlight is made to obtain external environmental light to optical sensor not to be influenced by backlight, obtains optical sensor
Take external environmental light more accurate, and optical sensor is arranged in display panel, closer to display area, acquisition to viewing area
The external environmental light that domain impacts is more accurate.
Description of the drawings
Included attached drawing is used for providing being further understood from the embodiment of the present application, and which constitute one of specification
Point, for illustrating presently filed embodiment, and with word description come together to illustrate the principle of the application.Under it should be evident that
Attached drawing in the description of face is only some embodiments of the present application, for those of ordinary skill in the art, is not paying wound
Under the premise of the property made is laborious, other attached drawings are can also be obtained according to these attached drawings.In the accompanying drawings：
Fig. 1 is the utility model embodiment first substrate schematic diagram；
Fig. 2 is another schematic diagram of the utility model embodiment first substrate；
Fig. 3 is the utility model embodiment second substrate schematic diagram；
Fig. 4 is the utility model embodiment display panel schematic diagram
Wherein：10th, first substrate, 11, light shield layer/metal black matrix, 12, optical sensor, 13, photodiode, 14, thoroughly
Bright conductive layer, 20, second substrate, the 21, first layer conductor, 211, grid lead section, 22, insulating medium layer, 23, amorphous silicon layer,
24th, ohmic contact layer, 25, source lead section, 26, drain conductors section, 27, raceway groove, 28, via, the 40, first protective layer, 50, CF
Layer, the 60, second protective layer, 70, pixel electrode layer, 900, control chip.
Specific embodiment
Specific structure and function details disclosed herein are only representative, and are for describing the utility model
Exemplary embodiment purpose.But the utility model can be implemented, and should not by many alternative forms
It is construed as being limited only by the embodiments set forth herein.
In the description of the present invention, it is to be appreciated that term " " center ", " transverse direction ", " on ", " under ", " left side ",
The orientation or position relationship of the instructions such as " right side ", " vertical ", " level ", " top ", " bottom ", " interior ", " outer " are based on shown in the drawings
Orientation or position relationship are for only for ease of description the utility model and simplify description rather than instruction or imply signified dress
It puts or element must have specific orientation, with specific azimuth configuration and operation, therefore it is not intended that the utility model
Limitation.In addition, term " first ", " second " are only used for description purpose, and it is not intended that instruction or hint relative importance
Or the implicit quantity for indicating indicated technical characteristic.Define " first " as a result, the feature of " second " can be expressed or
Implicitly include one or more this feature.In the description of the present invention, unless otherwise indicated, the meaning of " multiple "
It is two or more.In addition, term " comprising " and its any deformation, it is intended that cover non-exclusive include.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " is pacified
Dress ", " connected ", " connection " should be interpreted broadly, for example, it may be being fixedly connected or being detachably connected or integrally
Connection；Can be mechanical connection or electrical connection；It can be directly connected, can also be indirectly connected by intermediary,
It can be the connection inside two elements.For the ordinary skill in the art, can above-mentioned art be understood with concrete condition
Concrete meaning of the language in the utility model.
Term used herein above is not intended to limit exemplary embodiment just for the sake of description specific embodiment.Unless
Context clearly refers else, otherwise singulative used herein above "one", " one " also attempt to include plural number.Should also
When understanding, term " comprising " and/or "comprising" used herein above provide stated feature, integer, step, operation,
The presence of unit and/or component, and do not preclude the presence or addition of other one or more features, integer, step, operation, unit,
Component and/or a combination thereof.
The utility model is described in further detail with preferred embodiment below in conjunction with the accompanying drawings.
The display panel of the utility model embodiment is described below with reference to Fig. 1 to Fig. 4.
As shown in Figure 1 and Figure 4, display panel includes in the implementation of Fig. 1 and Fig. 4：First substrate 10, second substrate 20,
Active switch, pixel (not shown), chromatic filter layer 50, light shield layer 11 and optical sensor 12.Wherein 10 He of first substrate
Second substrate 20 is oppositely arranged, and the second substrate 20 is equipped with active switch, and the active switch includes conducting channel.It is described
Pixel is arranged on the second substrate, and is coupled with the active switch；Chromatic filter layer is formed in the second substrate
On, corresponding to the location of pixels；The light shield layer 11 is arranged on first substrate 10, and the light shield layer 11 corresponds to active switch
Conducting channel 27 set, the light shield layer 11 covers active switch conducting channel 27, and the light shield layer 11 uses conductive material
It is made；Chip 900 is controlled, is coupled with the light shield layer 11, for adjusting display panel brightness；；The optical sensor 12 is set
Between first substrate 10 and light shield layer 11, the width of the optical sensor 12 is less than or equal to the width of light shield layer 11.
Optical sensor 12 is equipped between first substrate 10 and light shield layer 11, the width of optical sensor 12 is less than light shield layer 11
Width, in face of user, first substrate 10 is transparent substrates for the first substrate 10 of display panel, and external environmental light can penetrate the
One substrate 10 enters, and optical sensor 12 can obtain the external environmental light entered by first substrate 10, so as to according to extraneous ring
The power of border light sends out different electric signals, so as to fulfill according to environment bright-dark degree adjusting display brightness, in optical sensor 12
There is light shield layer 11 side, and 11 width of light shield layer is greater than or equal to the width of optical sensor 12, and light shield layer 11 can be optical sensor
Backlight at 12 shelters from completely, and backlight is made to obtain external environmental light to optical sensor 12 not to be influenced by backlight, makes light sensing
Device 12 obtains that external environmental light is more accurate, and optical sensor 12 is arranged in display panel, closer to display area, acquisition
The external environmental light impacted to display area is more accurate.And the conducting channel 27 of the correspondence active switch of light shield layer 11 is set
It puts, and covers active switch conducting channel 27, not in display area, light shield layer 11 covers actively in active switch corresponding region
Switches conductive raceway groove 27 is set, and can not reduce aperture opening ratio, and the external environmental light on front side of display panel can also be avoided to inject shadow
The conducting channel 27 of active switch is rung, can further reduce photoproduction carrier concentration, improves device operation characteristic.Optionally,
Optical sensor 12 can include the optical sensor of individual packages, and the optical sensor of individual packages draws the connection control of two signal lines
Chip.Preferably, the optical sensor 12 includes photodiode.The area of the PN junction of photodiode is relatively large, so as to
Incident light is received, reverse current is extremely faint when photodiode does not have illumination, and when having illumination, reverse current increases rapidly, instead
It should be sensitive.It is furthermore preferred that the optical sensor 12 includes photodiode.Photodiode has that junction capacity is small, the transition time
The advantages that short, high sensitivity.
As shown in Fig. 2, display panel includes first substrate 10 in the implementation of Fig. 2, the first substrate 10 includes shading
Layer 11 and optical sensor, the light shield layer 11 are arranged on first substrate 10；The optical sensor is arranged on 10 He of first substrate
Between light shield layer 11, the width of the optical sensor is less than or equal to the width of light shield layer 11.
The optical sensor includes photodiode 13.Photodiode 13 is with junction capacity is small, the transition time is short, sensitive
Spend the advantages that high.
Wherein, the first substrate 10 further includes transparency conducting layer 14, and the transparency conducting layer 14 is arranged on first substrate
Between 10 and optical sensor.The original design of first substrate 10 is not influenced, and transparency conducting layer 14ITO does not influence optical sensor to entering
Penetrate the acquisition of light.The optical sensor is photodiode 13, and the light shield layer 11 includes metal black matrix 11, the metal black
Matrix 11 is coupled with the control chip 900, and the transparency conducting layer 14 and metal black matrix 11 are the two of photodiode 13
Lateral electrode.The transparency conducting layer 14 (ITO common electrodes) and metal black matrix (BM) 11 of first substrate 10 are photodiode 13
Two lateral electrodes, 11 electrode of metal black matrix (BM) access control chip 900, liquid is set between light shield layer 11 and second substrate 20
Crystalline substance increases photodiode 13 and display panel thickness effect is had little effect, utilizes existing 14 (ITO of transparency conducting layer
Common electrode) and metal black matrix (BM) 11 be photodiode 13 two lateral electrodes, change it is small, it is easy to accomplish.
Wherein, the photodiode 13 includes three-layer semiconductor layer, the first layer semiconductor of the three-layer semiconductor layer
Layer outside is directly connected to transparency conducting layer 14, and metal black is directly connected on the outside of the third layer semiconductor layer of the three-layer semiconductor layer
Matrix 11, the three-layer semiconductor slice width degree are less than metal black matrix 11.Photodiode 13 is partly led in P-type semiconductor and N-type
One layer of intrinsic semiconductor is clipped between body.Because intrinsic layer is high resistance area relative to P areas and N areas, the internal electric field of such PN junction is just
Substantially concentrate on entirely in I layers.The very low N-type semiconductor of one layer of concentration is mixed among the PN junction of photodiode, it is possible to
Increase the width of depletion region, reach the influence for reducing diffusion motion, improve the purpose of response speed.Due to mixing for this doped layer
Miscellaneous concentration is low, intimate intrinsic (Intrinsic) semiconductor, therefore claims I layers, therefore this structure becomes photodiode 13.I layers compared with
Thickness almost occupies entire depletion region.The incident light of the overwhelming majority is absorbed in I layers and generates a large amount of electron-hole pair.
It is the very high p-type of doping concentration and N-type semiconductor I layers of both sides, P layers and N layers very thin, absorbs the ratio very little of incident light.Cause
And light generates drift component in electric current and accounts for leading position, this just greatly accelerates response speed.There is photodiode 13
The advantages that junction capacity is small, the transition time is short, high sensitivity.
As shown in Figure 3 and Figure 4, display panel includes first substrate 10, the first substrate in the implementation of Fig. 3 and Fig. 4
10 include light shield layer 11 and optical sensor, and the light shield layer 11 is arranged on first substrate 10；The optical sensor is arranged on
Between one substrate 10 and light shield layer 11, the width of the optical sensor is less than or equal to the width of light shield layer 11.
Optical sensor is equipped between first substrate 10 and light shield layer 11, the width of optical sensor is less than the width of light shield layer 11
Degree, the first substrate 10 of display panel is in face of user, and first substrate 10 is transparent substrates, and external environmental light can penetrate the first base
Plate 10 enters, and optical sensor can obtain the external environmental light entered by first substrate 10, so as to according to external environmental light
Power sends out different electric signals, and so as to fulfill according to environment bright-dark degree adjusting display brightness, optical sensor inside, which also has, to be hidden
Photosphere 11,11 width of light shield layer are greater than or equal to the width of optical sensor, and light shield layer 11 can be complete the backlight at optical sensor
It shelters from entirely, backlight is made to obtain external environmental light to optical sensor not to be influenced by backlight, and optical sensor is made to obtain external environment
Light is more accurate, and optical sensor is arranged in display panel, and closer to display area, acquisition impacts display area
External environmental light it is more accurate.
Optionally, optical sensor can include the optical sensor of individual packages, and the optical sensor of individual packages draws two
Signal wire connection control chip 900.Preferably, the optical sensor includes photodiode.The face of the PN junction of photodiode
Product is relatively large, and to receive incident light, reverse current is extremely faint when photodiode does not have illumination, when having illumination, reversely
Electric current increases rapidly, and is quick on the draw.It is furthermore preferred that the optical sensor includes photodiode 13.Photodiode 13 has
The advantages that junction capacity is small, the transition time is short, high sensitivity.
Wherein, the first substrate 10 further includes transparency conducting layer 14, and the transparency conducting layer 14 is arranged on first substrate
Between 10 and photodiode 13, the light shield layer 11 includes metal black matrix 11, and the coupling of metal black matrix 11 adjusts aobvious
Show the both sides electricity of the control chip 900 of panel luminance, the transparency conducting layer 14 and metal black matrix 11 for photodiode 13
Pole.The transparency conducting layer 14 (ITO common electrodes) and metal black matrix (BM) 11 of first substrate 10 are the both sides of photodiode 13
Electrode, 11 electrode of metal black matrix (BM) access control chip 900, sets liquid crystal, increases between light shield layer 11 and second substrate 20
Photodiode 13 is added to have little effect display panel thickness effect, utilizes existing (the ITO common-batteries of transparency conducting layer 14
Pole) and metal black matrix (BM) 11 be photodiode 13 two lateral electrodes, change it is small, it is easy to accomplish.
Wherein, the photodiode 13 includes three-layer semiconductor layer, the first layer semiconductor of the three-layer semiconductor layer
Layer outside is directly connected to transparency conducting layer 14, and metal black is directly connected on the outside of the third layer semiconductor layer of the three-layer semiconductor layer
Matrix 11, the three-layer semiconductor slice width degree are less than metal black matrix 11.Photodiode 13 is partly led in P-type semiconductor and N-type
One layer of intrinsic semiconductor is clipped between body.Because intrinsic layer is high resistance area relative to P areas and N areas, the internal electric field of such PN junction is just
Substantially concentrate on entirely in I layers.The very low N-type semiconductor of one layer of concentration is mixed among the PN junction of photodiode, it is possible to
Increase the width of depletion region, reach the influence for reducing diffusion motion, improve the purpose of response speed.Due to mixing for this doped layer
Miscellaneous concentration is low, intimate intrinsic (Intrinsic) semiconductor, therefore claims I layers, therefore this structure becomes photodiode 13.I layers compared with
Thickness almost occupies entire depletion region.The incident light of the overwhelming majority is absorbed in I layers and generates a large amount of electron-hole pair.
It is the very high p-type of doping concentration and N-type semiconductor I layers of both sides, P layers and N layers very thin, absorbs the ratio very little of incident light.Cause
And light generates drift component in electric current and accounts for leading position, this just greatly accelerates response speed.There is photodiode 13
The advantages that junction capacity is small, the transition time is short, high sensitivity.
Optionally, the optical sensor is arranged on the edge of the display area of display panel.The aobvious of display area is not influenced
Show, the influence to display panel is small, and optical sensor is close to display area, and it is more accurate that external environmental light is obtained, optical sensor
Connection circuit can be arranged on outside display area, do not influence the display of display panel.
Optionally, the display area of the display panel is equipped with the control circuit of control optical sensor on one side.Save space,
Width will not additionally be increased, be especially suitable for the display panel of narrow frame and Rimless.
Preferably, the optical sensor be arranged on the upper side edge of display panel display area and left and right sides on, institute
State the control circuit that lower side corresponding non-display area in display panel display area is equipped with control optical sensor.Optical sensor is set
External environmental light can more fully be obtained on the upper side edge of display panel display area and in left and right sides by putting, and obtain model
It encloses more extensively, reacts sensitiveer comprehensive, the lower side of display area, which is equipped with, controls the control circuit of optical sensor that can save sky
Between, it will not additionally increase width, be especially suitable for the display panel of narrow frame and Rimless.
Optionally, the optical sensor is arranged on the center of the display area.The optic centre of people is in viewing area
The center in domain, it is most sensitive to the brightness of the position, therefore only need to set optical sensor in this center
Reach good dimming effect, and only need an optical sensor, cost is also more cheap.
Optionally, the optical sensor is only arranged at any position of the display area of display panel.In display area
Any position can set optical sensor, facilitate setting optical sensor.
Wherein, display panel includes second substrate 20, and several the first layer conductors 21 are provided on the second substrate 20；
Insulating medium layer 22 is provided on several first layer conductors 21, the first layer conductor 21 is corresponded on the insulating medium layer 22
Grid lead section 211 be equipped with amorphous silicon layer 23, the amorphous silicon layer 23 be equipped with and 23 corresponding Ohmic contact of amorphous silicon layer
Layer 24, the ohmic contact layer 24 are equipped with the source lead section 25 separated and drain conductors section 26, the source lead section 25
Conducting channel 27 is equipped between drain conductors section 26, the conducting channel 27 passes through ohmic contact layer 24, the trench bottom
For amorphous silicon layer 23, the source lead section 25 and drain conductors section 26 are equipped with the first protective layer 40, first protective layer
40 are equipped with chromatic filter layer (CF layers) 50, and the CF layers 50 are equipped with the second protective layer 60, are set on second protective layer 60
There is pixel electrode layer 70, the pixel electrode corresponds to drain conductors section 26 equipped with via 28, and the pixel electrode layer 70 passed through
Hole 2828 is connect with drain conductors section 26, and the via 28 passes through pixel electrode layer 70, the second protective layer 60, CF layers 50 and first
Protective layer 40.
Optionally, the source lead section 25 and 26 width of drain conductors section are equal to the width of amorphous silicon layer 23, the source
First protective layer 40 in 25 outside of polar conductor section is directly connect with insulating medium layer 22, and the insulating medium layer 22 corresponds to via 28
Top is equipped with amorphous silicon layer 23, ohmic contact layer 24 and drain conductors section 26 successively.
Optionally, the source lead section 25 and 26 width of drain conductors section are more than the width of amorphous silicon layer 23, the source
Polar conductor section 25 is directly connected to 22 opposite side of insulating medium layer beyond 23 part side of amorphous silicon layer and is directly connected to low-k
Protective layer, the insulating medium layer 22 corresponds to be connected between 28 part of via and drain conductors section 26.
In the above-described embodiments, pixel can be redgreenblue pixel, can also be four color pixel of red, green, blue and white, may be used also
Think red, green, blue and yellow four-color pixel.
In the above-described embodiments, amorphous silicon layer uses a-Si materials, naturally it is also possible to using other semiconductor layer materials.
In the above-described embodiments, the material of the first substrate and second substrate can select glass, plastics, resin etc..
In the above-described embodiments, display panel includes liquid crystal display panel, oled panel, curved surface panel and plasma panel etc.,
By taking liquid crystal display panel as an example, liquid crystal display panel includes array substrate (i.e. second substrate) and color membrane substrates (i.e. first substrate), the battle array
Row substrate is oppositely arranged with color membrane substrates, and liquid crystal and spacer units (photo are equipped between the array substrate and color membrane substrates
Spacer, PS).
In the above-described embodiments, chromatic filter layer and active switch array can be formed on same substrate, and array substrate can
Including chromatic filter layer.
In the above-described embodiments, the display panel of the utility model can be curved face type panel, and the active of the utility model is opened
It closes and thin film transistor (TFT) (TFT) can be selected.
The above content is combine specific preferred embodiment further detailed description of the utility model, it is impossible to
Assert that the specific implementation of the utility model is confined to these explanations.For the ordinary skill of the utility model technical field
For personnel, without departing from the concept of the premise utility, several simple deduction or replace can also be made, should all be regarded
To belong to the scope of protection of the utility model.
Claims (10)
1. a kind of display panel, which is characterized in that the display panel includes：
First substrate；
Second substrate, the relatively described first substrate setting of the second substrate；
Active switch, the active switch are arranged on the second substrate, and the active switch includes conducting channel；
Pixel, the pixel are arranged on the second substrate, and are coupled with the active switch；
Chromatic filter layer is formed on the second substrate, corresponding to the location of pixels；
Light shield layer, on the first substrate, the conducting channel that the light shield layer corresponds to the active switch is set for the light shield layer setting
It puts, the light shield layer covers the active switch conducting channel, and the light shield layer is made of conductive material；
Chip is controlled, is coupled with the light shield layer, for adjusting display panel brightness；
Optical sensor, the optical sensor are arranged between first substrate and light shield layer.
2. a kind of display panel as described in claim 1, which is characterized in that the optical sensor includes photodiode.
3. a kind of display panel as claimed in claim 2, which is characterized in that the first substrate further includes transparency conducting layer,
The photodiode is arranged between transparency conducting layer and light shield layer, and the light shield layer includes metal black matrix, the metal
Black matrix is coupled with the control chip, the transparency conducting layer and two lateral electrodes that metal black matrix is photodiode.
4. a kind of display panel as claimed in claim 3, which is characterized in that the photodiode includes three-layer semiconductor
Layer, the first layer semiconductor layer outside of the three-layer semiconductor layer are directly connected to transparency conducting layer, the three-layer semiconductor layer
Metal black matrix is directly connected on the outside of third layer semiconductor layer, the three-layer semiconductor slice width degree is less than metal black matrix.
5. a kind of display panel as described in claim 1, which is characterized in that the first substrate further includes transparency conducting layer,
The optical sensor is arranged between transparency conducting layer and light shield layer.
6. a kind of display panel as described in claim 1, which is characterized in that the width of the optical sensor, which is less than or equal to, to be hidden
The width of photosphere.
7. a kind of display panel as described in claim 1, which is characterized in that the optical sensor is arranged on the aobvious of display panel
Show the edge in region.
8. a kind of display panel as described in claim 1, which is characterized in that the optical sensor is arranged on the aobvious of display panel
Show the two sides in region and the top margin far from display panel support base.
9. a kind of display panel as described in claim 1, which is characterized in that the optical sensor is arranged on the aobvious of display panel
Show the center in region.
10. a kind of display panel, which is characterized in that the display panel includes：
First substrate；
Second substrate, the relatively described first substrate setting of the second substrate；
Active switch, the active switch are arranged on the second substrate, and the active switch includes conducting channel；
Pixel, the pixel are arranged on the second substrate, and are coupled with the active switch；
Chromatic filter layer is formed on the second substrate, corresponding to the location of pixels；
Light shield layer, on the first substrate, the conducting channel that the light shield layer corresponds to the active switch is set for the light shield layer setting
It puts, the light shield layer covers the active switch conducting channel；
Optical sensor, the optical sensor are arranged between first substrate and light shield layer, the width of the optical sensor be less than or
Equal to the width of light shield layer, the optical sensor includes photodiode；Transparency conducting layer, the transparency conducting layer are arranged on institute
It states on first substrate, the photodiode is arranged between transparency conducting layer and light shield layer, and the light shield layer includes metal black
Matrix, the metal black Matrix coupling adjust the control chip of display panel brightness, the transparency conducting layer and metal black matrix
Two lateral electrodes for photodiode.
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|---|---|---|---|
| CN201721094612.7U CN207473245U (en) | 2017-08-29 | 2017-08-29 | A kind of display panel |
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| CN201721094612.7U CN207473245U (en) | 2017-08-29 | 2017-08-29 | A kind of display panel |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107357079A (en) * | 2017-08-29 | 2017-11-17 | 惠科股份有限公司 | A kind of display panel |
| CN113671748A (en) * | 2021-08-30 | 2021-11-19 | 深圳市华星光电半导体显示技术有限公司 | Liquid crystal display device having a plurality of pixel electrodes |
-
2017
- 2017-08-29 CN CN201721094612.7U patent/CN207473245U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107357079A (en) * | 2017-08-29 | 2017-11-17 | 惠科股份有限公司 | A kind of display panel |
| CN113671748A (en) * | 2021-08-30 | 2021-11-19 | 深圳市华星光电半导体显示技术有限公司 | Liquid crystal display device having a plurality of pixel electrodes |
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