CN113667979A

CN113667979A - Copper-molybdenum metal etching solution and application thereof

Info

Publication number: CN113667979A
Application number: CN202110897234.0A
Authority: CN
Inventors: 郭前程
Original assignee: TCL China Star Optoelectronics Technology Co Ltd
Current assignee: TCL China Star Optoelectronics Technology Co Ltd
Priority date: 2021-08-05
Filing date: 2021-08-05
Publication date: 2021-11-19

Abstract

The application discloses a copper-molybdenum metal etching solution and application thereof. The copper-molybdenum metal etching solution comprises the following components in percentage by weight: 1-21 wt% of hydrogen peroxide, 0.01-10 wt% of shape control agent, 0.01-5 wt% of etching stabilizer, 1-13 wt% of chelating agent, 0.01-8 wt% of pH regulator, 0.01-2.39 wt% of etching additive and the balance of deionized water. The copper-molybdenum metal etching solution can keep the same etching rate on the copper-molybdenum double-layer metal structure layer in the etching process, solves the defect of copper undercutting corrosion caused by oxidation-reduction potential difference of the copper-molybdenum double-layer metal, and obtains the copper-molybdenum metal structure layer meeting the requirements.

Description

Copper-molybdenum metal etching solution and application thereof

Technical Field

The application relates to the technical field of metal etching, in particular to a copper-molybdenum metal etching solution and application thereof.

Background

The display technology is a process of converting data information into visual information under the driving of an electric signal, and a thin film transistor liquid crystal display (hereinafter, referred to as TFT-LCD) is the earliest product to be produced, developed and commercialized. The TFT-LCD is gradually widely used by people due to its advantages of environmental protection, high performance, light weight, and the like. At present, advanced generation TFT-LCD liquid crystal panel displays tend to be large in size, high in resolution, high in frequency driving and the like, and play a key role as TFT devices for connecting data lines and pixel switches. In this context, the conventional aluminum metal material is gradually unable to meet the requirements of TFT-LCD due to its larger electrical resistivity, higher thermal expansion coefficient, lower melting point and low thermal conductivity, while the copper metal wire is favored by the higher electrical conductivity, better electromigration resistance and greater Cost-down (Cost-down) benefits than the aluminum metal material. Therefore, the development of the mature copper metal wire preparation process is the focus of the development of TFT-LCD.

Since copper metal does not form a dense oxide film to protect itself like aluminum metal, the copper metal material is easily oxidized and corroded. In addition, the metal layer is usually a two-layer or more metal structure in the copper process because the adhesion between copper and the common substrate is poor, and an additional insulating layer (barrier layer) is usually needed to assist the adhesion on the substrate. Different metals cause different etching rates due to different reduction potentials, thereby causing the problem of copper undercut corrosion during etching.

Therefore, the present application is directed to providing an etching solution having a better etching stability and a consistent etching rate for the currently adopted copper-molybdenum double-layer metal structure layer, so as to solve the problem of copper undercut corrosion caused by different oxidation-reduction potentials of copper and molybdenum.

Disclosure of Invention

The application provides a copper molybdenum metal etching solution, the adsorption capacity on two kinds of metal surfaces of copper molybdenum is different, can be used for adjusting at two kinds of metal surface film-forming distribution ratios of copper molybdenum, and then the relative etching rate of control copper molybdenum double metal, the emergence of phenomenon is hollowed out to the copper of avoiding etching process, makes the metal pattern figure that accords with the requirement.

The application provides a copper molybdenum metal etching solution, the components of which by weight percentage comprise: 1-21 wt% of hydrogen peroxide, 0.01-10 wt% of shape control agent, 0.01-5 wt% of etching stabilizer, 1-13 wt% of chelating agent, 0.01-8 wt% of pH regulator, 0.01-2.39 wt% of etching additive and the balance of deionized water.

Optionally, in some embodiments of the present application, the composition of the copper molybdenum metal etching solution includes, by weight: 6-15 wt% of hydrogen peroxide, 2-8 wt% of a shape control agent, 0.5-3 wt% of an etching stabilizer, 3-6 wt% of a chelating agent, 0.5-5 wt% of a pH regulator, 0.2-1.8 wt% of an etching additive and the balance of deionized water.

Alternatively, in some embodiments herein, the shape control agent comprises an O, N, S heteroatom-containing heterocyclic compound.

Optionally, in some embodiments of the present application, the shape control agent has a film formation distribution ratio at the copper metal surface that is less than a film formation distribution ratio at the molybdenum metal surface. The shape control agent has different film forming distribution ratios (adsorption capacities) on the surfaces of copper and molybdenum metal, so that the relative etching rates of the copper and molybdenum metal etching solution on the surfaces of copper and molybdenum metal are controlled.

Optionally, in some embodiments herein, the shape control agent is selected from at least one of furan, 5-aminotetrazole, pyrrolidone, hydroxymethylbenzotriazole, and oxoindene.

Optionally, in some embodiments of the present application, the etch stabilizer is selected from at least one of monoammonium phosphate, diammonium phosphate, sodium hydrogen phosphate, potassium hydrogen phosphate, and glycols.

Optionally, in some embodiments of the present application, the chelating agent is selected from at least one of iminodiacetic acid, nitrilotriacetic acid, sarcosine, glycine, alanine, and glutamic acid.

Optionally, in some embodiments herein, the pH adjusting agent is selected from at least one of potassium carbonate, sodium hydroxide, potassium hydroxide, and ammonia compounds.

Optionally, in some embodiments herein, the etching additive is selected from at least one of acetic acid, formic acid, butyric acid, oxalic acid, propionic acid, phosphoric acid, thiolazolidine, and 2-aminothiazole compounds.

Optionally, in some embodiments of the present application, the pH of the copper molybdenum metal etching solution is 4 to 5. For example, the pH of the copper molybdenum metal etching solution is 4.89.

Optionally, in some embodiments of the present application, the etching temperature of the copper molybdenum metal etching solution is 28 to 35 ℃.

Accordingly, the present disclosure also provides an application of the copper molybdenum metal etching solution in a gate pattern etching process, a source pattern etching process and/or a drain pattern etching process of a thin film transistor liquid crystal display. The copper molybdenum metal etching solution can effectively improve the etching solution of the copper hollowing corrosion phenomenon in the etching process.

Optionally, in some embodiments of the present application, the gate comprises a copper molybdenum metal layer; andor, the source comprises a copper molybdenum metal layer; and or, the drain comprises a copper molybdenum metal layer.

In addition, the embodiment of the present application further provides a thin film transistor including a scan electrode (gate electrode), a gate insulating layer, an active layer, an ohmic contact layer, a signal line layer, a passivation layer, and a pixel electrode disposed on the glass substrate. The scanning electrode (Gate) and the signal line layer (Source/Drain) are both metal electrodes, wherein the Gate comprises a copper-molybdenum metal layer; and the grid is formed by pattern etching by adopting the copper-molybdenum metal etching solution.

The beneficial effect of this application lies in:

the etching solution provided by the application can keep the consistent etching rate to the copper-molybdenum double-layer metal structure layer in the etching process, thereby solving the defect of copper undercut corrosion caused by oxidation-reduction potential difference of copper-molybdenum double-layer metal in the prior art and obtaining the grid copper-molybdenum metal structure layer meeting the requirements. Simultaneously because the etching solution that this application provided does not contain fluorine element, be convenient for the recycle of copper etching waste liquid moreover to environmental friendly, waste water treatment cost also can greatly reduced simultaneously.

The shape control agent of this application is different at two kinds of metal surface's of copper molybdenum adsorption capacity, can be used for adjusting at two kinds of metal surface film forming distribution ratios, and then control the relative etching rate of copper molybdenum double-layer metal, avoids the emergence of the phenomenon of hollowing out of copper among the etching process.

The copper-molybdenum double-layer metal etching agent belongs to a fluorine-free environment-friendly metal etching agent, the waste liquid treatment cost can be reduced, the whole etching process is stable, the problem of hollowing corrosion of a copper metal layer during etching of a TFT-LCD grid copper-molybdenum layer is solved, and a copper-molybdenum metal pattern meeting requirements can be obtained.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required to be used in the description of the embodiments are briefly introduced below, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative efforts.

FIG. 1 is a schematic structural diagram of a thin film transistor etched by a copper-molybdenum etching solution provided in an embodiment of the present application;

FIG. 2 is a first electron micrograph of a copper molybdenum metal layer in a thin film transistor after being etched by a copper molybdenum metal etching solution provided in an embodiment of the present application;

FIG. 3 is a second electron microscope image of a copper molybdenum metal layer in a TFT after being etched by the etching solution for copper molybdenum metal provided in the embodiment of the present application;

FIG. 4 is an electron microscope image of a copper molybdenum metal layer in a thin film transistor after being etched by a copper molybdenum metal etching solution provided by a comparative example.

Detailed Description

The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.

The embodiment of the application provides a copper-molybdenum metal etching solution and application thereof. The following are detailed below. It should be noted that the following description of the embodiments is not intended to limit the preferred order of the embodiments. In addition, in the description of the present application, the term "including" means "including but not limited to". The terms first, second, third and the like are used merely as labels, and do not impose numerical requirements or an established order. Various embodiments of the present application may exist in a range of versions; it is to be understood that the description in the form of a range is merely for convenience and brevity and should not be construed as an inflexible limitation on the scope of the application; accordingly, the described range descriptions should be considered to have specifically disclosed all the possible sub-ranges as well as individual numerical values within that range. For example, it is contemplated that the description of a range from 1 to 6 has specifically disclosed sub-ranges such as, for example, from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as individual numbers within a range such as, for example, 1, 2, 3, 4, 5, and 6, as applicable regardless of the range. In addition, whenever a numerical range is indicated herein, it is meant to include any number (fractional or integer) recited within the indicated range.

The embodiment of the application provides a copper-molybdenum metal etching solution, and the components of the copper-molybdenum metal etching solution comprise hydrogen peroxide, a shape control agent, an etching stabilizer, a chelating agent, a pH regulator, an etching additive and deionized water.

The weight percentage of hydrogen peroxide in the copper-molybdenum metal etching solution is 1-21 wt%; for example, the weight percentage of hydrogen peroxide can be 1 wt%, 2 wt%, 3 wt%, 5 wt%, 6 wt%, 8 wt%, 9 wt%, 10 wt%, 12 wt%, 14 wt%, 16 wt%, 17 wt%, 19 wt%, 20 wt%, or 21 wt%.

The weight percentage of the shape control agent in the copper-molybdenum metal etching solution is 0.01-10 wt%; for example, the weight percentage of the shape-controlling agent may be 0.01 wt%, 0.03 wt%, 0.05 wt%, 0.1 wt%, 0.2 wt%, 0.4 wt%, 0.8 wt%, 1.5 wt%, 2 wt%, 3 wt%, 4 wt%, 5 wt%, 6 wt%, 7 wt%, 8 wt%, 9 wt%, or 10 wt%.

Further, the shape control agent contains a heterocyclic compound having O, N, S hetero atoms. For example, the shape-controlling agent is at least one selected from furan, 5-aminotetrazole, pyrrolidone, hydroxymethylbenzotriazole and oxoindene. The shape control agent has different adsorption capacities on the surfaces of the copper and the molybdenum, and can be used for adjusting the film forming distribution ratio on the surfaces of the two metals, so that the relative etching rate of the double-layer metal is controlled, and the phenomenon of hollowing of copper in the etching process is avoided. Specifically, the film forming distribution ratio of the shape control agent on the surface of copper metal is smaller than that of the shape control agent on the surface of molybdenum metal. Because the etching rate of the molybdenum is high, more shape control agents are needed for regulation and control so as to reduce the etching rate of the molybdenum and further avoid the phenomenon of copper hollowing in the etching process.

The weight percentage of the etching stabilizer in the copper-molybdenum metal etching solution is 0.01-5 wt%; for example, 0.01 wt%, 0.05 wt%, 0.1 wt%, 0.2 wt%, 0.5 wt%, 0.8 wt%, 1 wt%, 2 wt%, 3 wt%, 4 wt%, or 5 wt%.

Further, the etching stabilizer is selected from at least one of monoammonium phosphate, diammonium phosphate, sodium hydrogen phosphate, potassium hydrogen phosphate, and glycol compounds. The etching stabilizer can control H to a certain extent₂O₂The decomposition rate of (2) reduces the amount of OH radicals generated during the etching process, so that the reaction process can be smoothly performed.

The weight percentage of the chelating agent in the copper-molybdenum metal etching solution is 1-13 wt%; for example, the chelating agent can be present in a weight percentage of 1 wt%, 2 wt%, 3 wt%, 4 wt%, 5 wt%, 6 wt%, 7 wt%, 8 wt%, 9 wt%, 10 wt%, 11 wt%, 12 wt%, or 13 wt%.

Further, the chelating agent is selected from at least one of iminodiacetic acid, nitrilotriacetic acid, sarcosine, glycine, alanine, and glutamic acid. The chelating agent can form chelate with copper metal ions in the etching process, so that the metal ions are not activated and are kept in a stable state, and H can be inhibited₂O₂The decomposition rate of the copper molybdenum metal etching solution can be kept at a stable pH value.

The weight percentage of the pH regulator in the copper-molybdenum metal etching solution is 0.01-8 wt%; for example, the weight percentage of the pH adjuster can be 0.01 wt%, 0.03 wt%, 0.08 wt%, 0.1 wt%, 0.2 wt%, 0.4 wt%, 0.8 wt%, 1.2 wt%, 2 wt%, 3 wt%, 4 wt%, 5 wt%, 6 wt%, 7 wt%, or 8 wt%.

Further, the pH regulator is at least one selected from potassium carbonate, sodium hydroxide, potassium hydroxide and ammonia compounds. The pH regulator can keep the copper-molybdenum metal etching solution stable in the etching processpH value and can slow down H₂O₂So that it maintains a stable oxidizing power.

The weight percentage of the etching additive in the copper-molybdenum metal etching solution is 0.01-2.39 wt%; for example, the weight percent of the etching additive can be 0.01 wt%, 0.05 wt%, 0.1 wt%, 0.2 wt%, 0.4 wt%, 0.8 wt%, 1 wt%, 1.2 wt%, 1.5 wt%, 1.8 wt%, 2.0 wt%, 2.2 wt%, or 2.39 wt%.

Further, the etching additive is at least one selected from the group consisting of acetic acid, formic acid, butyric acid, oxalic acid, propionic acid, phosphoric acid, thiolazolidine, and 2-aminothiazole compounds. The etching additive can assist the copper molybdenum double-layer metal oxide, is beneficial to forming a taper angle, and can maintain the service life of the copper molybdenum metal etching solution and stabilize the etching characteristic of the copper molybdenum metal etching solution.

The copper-molybdenum metal etching solution also comprises the balance of deionized water.

The pH value of the copper-molybdenum metal etching solution is 4-5. For example, the pH of the copper molybdenum metal etchant may be 4, 4.1, 4.2, 4.3, 4.4, 4.5, 4.6, 4.7, 4.8, 4.9, or 5.

The etching temperature of the copper-molybdenum metal etching solution is 28-35 ℃. For example, the etching temperature of the copper molybdenum metal etching solution can be 28 ℃, 29 ℃, 30 ℃, 31 ℃, 32 ℃, 33 ℃, 34 ℃ or 35 ℃.

The embodiment of the application also provides application of the copper-molybdenum metal etching liquid in the processes of grid pattern etching, source pattern etching and/or drain pattern etching in a thin film transistor liquid crystal display.

For example, the copper-molybdenum metal etching solution can be applied to etching of a gate pattern of a TFT-LCD Array layer; and etching the source/drain electrode pattern of the TFT-LCD Array layer.

The embodiment of the application also provides a thin film transistor, which comprises a scanning electrode (grid electrode), a grid insulating layer, an active layer, an ohmic contact layer, a signal line layer, a passivation layer and a pixel electrode which are sequentially stacked on the glass substrate. Wherein, the scanning electrode (Gate) and the signal line layer (Source/Drain) are both metal electrodes, wherein, the Gate comprises a copper-molybdenum metal layer; and the grid is formed by pattern etching by adopting the copper-molybdenum metal etching solution.

The present application has been repeated several times, and the present invention will now be described in further detail with reference to some test results, which will be described in detail below with reference to specific examples.

Example 1

The embodiment provides a copper-molybdenum metal etching solution, which comprises the following components in percentage by weight: 1 wt% of hydrogen peroxide, 10 wt% of a shape control agent, 0.01 wt% of an etching stabilizer, 13 wt% of a chelating agent, 0.01 wt% of a pH regulator, 2.39 wt% of an etching additive, and the balance of deionized water.

The shape control agent is furan or 5-aminotetrazole.

The etching stabilizer is selected from monoammonium phosphate and diammonium phosphate.

The chelating agent is selected from imido acetic acid.

The etching additive is acetic acid.

The pH value of the copper-molybdenum metal etching solution is 4. The pH regulator is potassium carbonate.

The etching temperature of the copper-molybdenum metal etching solution is 28 ℃.

Example 2

The embodiment provides a copper-molybdenum metal etching solution, which comprises the following components in percentage by weight: 21 wt% of hydrogen peroxide, 0.01 wt% of shape control agent, 5 wt% of etching stabilizer, 1 wt% of chelating agent, 8 wt% of pH regulator, 0.01 wt% of etching additive and the balance of deionized water.

The shape control agent is selected from pyrrolidone and hydroxymethyl benzotriazole.

The etching stabilizer is selected from sodium hydrogen phosphate and potassium hydrogen phosphate.

The chelating agent is nitrilotriacetic acid.

The etching additive is butyric acid.

The pH value of the copper-molybdenum metal etching solution is 5. The pH regulator is sodium hydroxide.

The etching temperature of the copper-molybdenum metal etching solution is 35 ℃.

Example 3

The embodiment provides a copper-molybdenum metal etching solution, which comprises the following components in percentage by weight: 6 wt% of hydrogen peroxide, 8 wt% of shape control agent, 0.5 wt% of etching stabilizer, 6 wt% of chelating agent, 0.5 wt% of pH regulator and 1.8 wt% of etching additive, and the balance of deionized water.

The shape control agent is hydroxymethyl benzotriazole.

The etching stabilizer is selected from monoammonium phosphate.

The chelating agent is sarcosine.

The etching additive is formic acid.

The pH value of the copper-molybdenum metal etching solution is 4.5. The pH regulator is selected from sodium carbonate and sodium hydroxide.

The etching temperature of the copper-molybdenum metal etching solution is 30 ℃.

Example 4

The embodiment provides a copper-molybdenum metal etching solution, which comprises the following components in percentage by weight: 15 wt% of hydrogen peroxide, 2 wt% of a shape control agent, 3 wt% of an etching stabilizer, 3 wt% of a chelating agent, 5 wt% of a pH regulator and 0.2 wt% of an etching additive, and the balance of deionized water.

The shape control agent is selected from indene.

The etching stabilizer is glycol compound.

The chelating agent is selected from alanine and glutamic acid.

The etching additive is thiol imidazoline.

The pH value of the copper-molybdenum metal etching solution is 5. The pH regulator is potassium carbonate or potassium hydroxide.

The etching temperature (using temperature) of the copper-molybdenum metal etching solution is 32 ℃.

Example 5

The embodiment provides a copper-molybdenum metal etching solution, which comprises the following components in percentage by weight: 8.31 wt% of hydrogen peroxide, 6.09 wt% of a shape control agent, 1.25 wt% of an etching stabilizer, 1.17 wt% of a chelating agent, 2.01 wt% of a pH regulator, 0.89 wt% of an etching additive and 80.28 wt% of deionized water.

The shape control agent is furan.

The etching stabilizer is selected from monoammonium phosphate.

The chelating agent is selected from imido acetic acid.

The etching additive is acetic acid.

The pH value of the copper-molybdenum metal etching solution is 4.89. The pH regulator is potassium carbonate.

The etching temperature (use temperature) of the copper-molybdenum metal etching solution is 31 ℃.

Comparative example 1

Comparative example 1 provides a metal etching solution consisting of the following components: 8.31 wt% of hydrogen peroxide, 6.09 wt% of a shape control agent, 1.17 wt% of a chelating agent, 2.01 wt% of a pH regulator, 0.89 wt% of an etching additive, and the balance of deionized water. Comparative example 1 differs from example 5 in that: no shape control agent was added.

Example 6

In this embodiment, referring to fig. 1, the thin film transistor 100 includes: including a glass substrate 110, a scan electrode (gate electrode) 120, a gate insulating layer 130, an active layer 140, an ohmic contact layer 150, a signal line layer 160, a passivation layer 170, and a pixel electrode 180. Further, the scan electrode (Gate)120 and the signal line layer (Source/Drain)160 are metal electrodes. The gate 120 is a copper-molybdenum metal layer; and the grid is formed by pattern etching by adopting the copper-molybdenum metal etching solution.

Referring to fig. 1, the gate insulating layer 130 is disposed on the glass substrate 110, and the scan electrode 120 is disposed between the glass substrate 110 and the gate insulating layer 130. The active layer 140 and the ohmic contact layer 150 are sequentially stacked on the gate insulating layer 130; the signal line layer 160 is disposed on the ohmic contact layer 150 and the gate insulating layer 130, and the signal line layer 160 is connected to the active layer 140; the passivation layer 170 is disposed on the signal line layer 160 and the gate insulating layer 130; the pixel electrode 180 is disposed on the passivation layer 170 and connected to the signal line layer 160.

Test example 1

In the experimental example, the metal etching solutions of example 5 and comparative example 1 were respectively used to etch a gate copper molybdenum metal layer in a thin film transistor, and the etching effect was observed. The test results are shown in fig. 2 to 4.

FIGS. 2 and 3 are electron micrographs of a copper-molybdenum metal layer etched by the copper-molybdenum metal etching solution of example 5, wherein the copper-molybdenum metal film layer is intact. FIG. 4 is an electron micrograph of a copper molybdenum metal layer etched by the metal etchant of comparative example 1, showing copper undercut.

According to fig. 2 to 4, it can be seen that the copper-molybdenum metal film layer using the metal etching solution of the present application does not have copper undercutting corrosion after etching; the copper-molybdenum metal film layer using the metal etching solution of comparative example 1 had a copper undercut corrosion phenomenon after etching. Obviously, the copper-molybdenum metal etching solution can effectively solve the problem of hollowing corrosion of the copper metal layer during etching of the grid copper-molybdenum metal layer.

In conclusion, the copper-molybdenum metal etching solution can keep consistent etching rate on the copper-molybdenum double-layer metal structure layer in the etching process, overcomes the defect of copper undercut corrosion caused by oxidation-reduction potential difference of the copper-molybdenum double-layer metal, and obtains the gate copper-molybdenum metal structure layer meeting the requirements.

The copper-molybdenum metal etching solution provided by the embodiment of the present application and the application thereof are described in detail above, and the principle and the implementation manner of the present application are explained in the present application by applying specific examples, and the description of the above embodiments is only used to help understanding the method and the core concept of the present application; meanwhile, for those skilled in the art, according to the idea of the present application, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present application.

Claims

1. The copper-molybdenum metal etching solution is characterized by comprising the following components in percentage by weight: 1-21 wt% of hydrogen peroxide, 0.01-10 wt% of shape control agent, 0.01-5 wt% of etching stabilizer, 1-13 wt% of chelating agent, 0.01-8 wt% of pH regulator, 0.01-2.39 wt% of etching additive and the balance of deionized water.

2. The copper molybdenum metal etchant according to claim 1, wherein the shape control agent contains a heterocyclic compound containing O, N, S heteroatoms; the film forming distribution ratio of the shape control agent on the surface of the copper metal is smaller than that of the shape control agent on the surface of the molybdenum metal.

3. The copper molybdenum metal etchant according to claim 1 or 2, wherein the shape control agent is at least one selected from furan, 5-aminotetrazole, pyrrolidone, hydroxymethylbenzotriazole and indene.

4. The copper molybdenum metal etchant according to claim 1, wherein the etching stabilizer is at least one selected from the group consisting of monoammonium phosphate, diammonium phosphate, sodium hydrogen phosphate, potassium hydrogen phosphate, and glycols.

5. The copper molybdenum metal etchant according to claim 1, wherein the chelating agent is at least one selected from the group consisting of iminodiacetic acid, nitrilotriacetic acid, sarcosine, glycine, alanine, and glutamic acid.

6. The copper molybdenum metal etchant according to claim 1, wherein the pH adjuster is at least one selected from the group consisting of potassium carbonate, sodium hydroxide, potassium hydroxide, and ammonia compounds.

7. The copper molybdenum metal etchant according to claim 1, wherein the etching additive is at least one selected from the group consisting of acetic acid, formic acid, butyric acid, oxalic acid, propionic acid, phosphoric acid, thiolamidazoline, and 2-aminothiazole compounds.

8. The copper-molybdenum metal etching solution as claimed in claim 1, wherein the pH value of the copper-molybdenum metal etching solution is 4-5.

9. The copper-molybdenum metal etching solution as claimed in claim 1, wherein the etching temperature of the copper-molybdenum metal etching solution is 28-35 ℃.

10. Use of the copper molybdenum metal etching liquid according to any one of claims 1 to 9 in a gate pattern etching, source pattern etching and/or drain pattern etching process in a thin film transistor liquid crystal display.