CN113659973B - High-voltage multiplexer of drive circuit and battery monitoring switch - Google Patents
High-voltage multiplexer of drive circuit and battery monitoring switch Download PDFInfo
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- CN113659973B CN113659973B CN202110807558.0A CN202110807558A CN113659973B CN 113659973 B CN113659973 B CN 113659973B CN 202110807558 A CN202110807558 A CN 202110807558A CN 113659973 B CN113659973 B CN 113659973B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The invention provides a driving circuit applied to a high-voltage multiplexer, which is used for controlling the conduction state of a switch module in the high-voltage multiplexer; the driving circuit includes: the device comprises a pull-down current generation module, an output drive generation module and an output feedback module; a pull-down current generation module: converting the bias voltage signal into a pull-down current; an output drive generation module: generating an output driving signal for driving and controlling the on state of the switch module of the high-voltage multiplexer; and an output feedback module: and feeding back an output signal of the high-voltage multiplexer switch module, and further generating an output driving signal at the output driving generating module. The invention has the following advantages: the driving circuit has simple structure and high reliability; and multiplexing can be carried out in the high-voltage multiplexer of battery monitoring switch, can guarantee that voltage transmission module is closed strictly, and other switches can not open by mistake simultaneously, and other channels that close strictly do not influence opening of normal channel.
Description
Technical Field
The invention relates to the technical field of electronics, in particular to a high-voltage multiplexer of a driving circuit and a battery monitoring switch.
Background
The integrated circuit chip (Battery Monitoring Integrated Circuit, BMIC) for battery monitoring and management generally needs to collect and detect voltages of multiple batteries, and a high voltage signal is inevitably introduced into the stack of multiple batteries, and the high voltage signal easily affects the collection and detection accuracy of the BMIC on the multiple batteries. If battery voltage acquisition is performed separately for each channel in a chip, multiple ADC modules are introduced in the circuit, which greatly increases circuit area and power consumption. Only one battery cell will be sampled in the same conversion period, so that the multiplexer structure is adopted to select the battery cells, and measurement of a plurality of channels can be realized through only 1 ADC, so that the circuit area is greatly reduced, and the power consumption is saved. As shown in the functional block diagram of the integrated circuit chip architecture for battery monitoring and management in fig. 1, the high voltage multiplexer module is primarily used to effect channel selection.
The prior art has the following defects: in the high voltage multiplexer module, in order to meet the requirement of multi-channel acquisition, a sampling switch circuit needs to be designed for each channel. Generally, the acquisition front-end circuit is matched with one driving circuit for one group of switches, which requires multiple driving circuits for multiple groups of switches. The plurality of driving circuits not only increases power consumption and area of the circuit, but also reduces reliability of the chip.
Disclosure of Invention
To solve the above problems:
according to a first aspect of the present invention, a driving circuit for a high voltage multiplexer is provided, the driving circuit being configured to control a conductive state of a switch module in the high voltage multiplexer; the driving circuit includes: the device comprises a pull-down current generation module, an output drive generation module and an output feedback module;
a pull-down current generation module: converting the bias voltage signal into a pull-down current; providing a pull-down current for the output drive generation module, wherein the pull-down current is the bias current of the drive generation module;
an output drive generation module: generating an output driving signal for driving and controlling the on state of the switch module of the high-voltage multiplexer;
and an output feedback module: and feeding back an output signal of the high-voltage multiplexer switch module, and further generating an output driving signal at the output driving generating module.
Preferably, the pull-down current generation module converts an externally input bias voltage signal into the pull-down current through an amplifier.
Further preferably, the amplifier is a common source amplifier.
Still further preferably, the common source amplifier includes an NMOS transistor MN8 and a resistor R3;
the grid electrode of the MN3 is connected with a bias voltage signal, the source electrode of the MN3 is grounded, and the drain electrode of the MN3 is connected with one end of the resistor R3;
the other end of the resistor R3 is connected with the output drive generation module, and pull-down current I3 is provided for the output drive generation module.
Preferably, the output driving generation module is a current mirror with a cascode structure;
the input of the output drive generation module is connected with the other end of the resistor R3 in the pull-down current generation module;
the output of the output drive generation module is an output drive signal.
Further preferably, the current mirror of the cascode structure includes PMOS transistors MP8, MP9, MP4 and MP5;
the grid electrodes of the PMOS tubes MP8, MP9, MP4 and MP5 and the drain electrode of the MP5 are connected with the other end of the resistor R3;
the sources of the MP8 and the MP9 are connected with a power supply voltage;
the drain electrode of the MP8 is connected with the source electrode of the MP 4;
the drain electrode of the MP9 is connected with the source electrode of the MP5;
the drain electrode of the MP4 is connected with the output driving signal.
Further preferably, the PMOS transistors MP4 and MP5 are double diffusion PMOS transistors.
Preferably, the output feedback module comprises a PMOS tube MP3 and a resistor R2;
the grid electrode of the PMOS tube MP3 is connected with an output signal, the source electrode is connected with the output driving signal, and the drain electrode is grounded through a resistor R2.
The specific technical scheme of the invention is as follows:
according to a second aspect of the present invention, the present invention provides a high-voltage multiplexer of a battery monitoring switch, the driving circuit, the high-voltage multiplexer of the battery monitoring switch further includes a bias module and a switch module;
and a bias module: providing a bias voltage or bias current to the switching module and the driving circuit;
and a switch module: and the input voltage signals of the multiple paths of batteries are collected under the control of the driving circuit.
Preferably, the bias module comprises a pull-up current generation module and a bias voltage generation module;
the bias voltage generation module: converting the input bias current into a bias voltage signal and providing a working current I4 for the pull-up current generating module;
the pull-up current generation module: the working current I4 is converted into a pull-up current signal I5 through a current mirror structure, and the pull-up current signal I5 is used as bias current of a driving circuit.
Further preferably, the current mirror structure is a current mirror of a cascode structure;
still further preferred, the current mirror of the cascode structure; comprises PMOS tubes MP10, MP11, MP6 and MP7;
the grid electrodes of the PMOS tubes MP10, MP11, MP6 and MP7 are connected with the drain electrode of the MP7 and the working current signal I4 of the bias voltage generating module;
the sources of the MP10 and the MP11 are connected with a power supply voltage;
the drain electrode of the MP10 is connected with the source electrode of the MP 6;
the drain electrode of the MP11 is connected with the source electrode of the MP7;
the drain electrode of the MP6 is connected with the pull-up current signal.
Still more preferably, the PMOS transistors MP6 and MP7 are double diffusion PMOS transistors.
Preferably, the bias voltage generating module includes NMOS transistors MN1, MN2, and MN3;
the sources of the NMOS transistors MN1 and MN2 are grounded;
the gates of the NMOS transistors MN1, MN2 and MN3 are connected with an input bias current signal and a bias voltage signal;
the drain electrode of the NMOS tube MN2 is connected with the source electrode of the MN3;
the drain electrode of the NMOS tube MN3 outputs an operating current signal I4.
Further preferably, the NMOS transistor MN3 is a double diffusion NMOS transistor.
Preferably, the switch module comprises a voltage transmission module, a pull-down control module and zener diodes D1 and D2;
and the voltage transmission module is used for: the input voltage signals of the high-voltage multi-path battery are collected through the control of the pull-down control module and the driving circuit;
and the pull-down control module is used for: the on state of the voltage transmission module is controlled through different states of the control signals and the driving circuit;
the forward end of the zener diode D1 is connected with the pull-up current signal, and the reverse end of the zener diode D1 is connected with the output driving signal;
the positive terminal of the zener diode D2 is connected with the output signal; the reverse end is connected with the output driving signal and D2.
Further preferably, the voltage transmission module comprises a resistor R1, and double diffusion PMOS tubes MP1 and MP2;
one end of the resistor R1 and the source electrode of the MP1 are connected with the voltage signal VIN of the high-voltage multi-path battery;
the other end of the resistor R1 and the grid electrode of the MP1 are connected with a first current signal I1;
the drain electrode of the MP1 is connected with the drain electrode of the MP2;
the source electrode of the MP2 is connected with the output signal;
the grid electrode of the MP2 is connected with the pull-up current signal and the second current signal I2.
Still further preferably, the pull-down control module includes NMOS transistors MN4, MN5, MN6, and MN7;
the source electrodes of the MN4 and the MN5 are grounded, and the grid electrodes are connected with the bias voltage signal;
the drains of the MN4 and the MN5 are respectively connected with the sources of the MN6 and the MN7;
the gates of the MN6 and the MN7 are connected with control signals;
the drain electrode of the MN6 is connected with the pull-up current signal and the second current signal I2;
preferably, the switching circuits are at least 2 in parallel.
The invention has the following advantages: the driving circuit has simple structure and high reliability; and multiplexing can be carried out in the high-voltage multiplexer of battery monitoring switch, can guarantee that voltage transmission module is closed strictly, and other switches can not open by mistake simultaneously, and other channels that close strictly do not influence opening of normal channel.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a functional block diagram of an integrated circuit chip architecture for battery monitoring and management;
FIG. 2 is a functional block diagram of a high voltage multiplexer of the present invention;
FIG. 3 is a functional block diagram of a drive module of the present invention;
FIG. 4 is a functional block diagram of a bias module of the present invention;
FIG. 5 is a functional block diagram of a switch module of the present invention;
FIG. 6 is a schematic circuit diagram of a drive module of the present invention;
FIG. 7 is a schematic circuit diagram of a bias module of the present invention;
FIG. 8 is a schematic circuit diagram of a switch module of the present invention;
FIG. 9 is a schematic circuit diagram of a high voltage multiplexer of the battery monitor switch of the present invention;
fig. 10 is a schematic diagram of an application of the high voltage multiplexer of the battery monitor switch of the present invention.
Detailed Description
The present invention will be described in further detail and fully with reference to the accompanying drawings.
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. The components of the embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The driving circuit and the high-voltage multi-path battery monitoring switch provided by the invention are described in detail below through a few specific embodiments.
As shown in fig. 2, which is a functional block diagram of the high-voltage multiplexer of the present invention, the high-voltage multiplexer includes a driving module 11, a biasing module 12 and a switching module 13;
the driving module 11 is used for controlling the conducting state of the switch module in the high-voltage multiplexer;
bias module 12: providing a bias voltage or bias current to the switching module and the driving circuit;
the switch module 13: and the input voltage signals of the multiple paths of batteries are collected under the control of the driving circuit. When the switch module 13 is in the on state, the voltages of the multiple battery packs connected to the switch module 13 are collected through the switch module 13, i.e. the voltages of the multiple battery packs are input to a post-processing circuit (not shown) through the switch module 13.
The following describes each module separately:
FIG. 3 is a functional block diagram of a drive module of the present invention; the driving module 11 (also called a driving circuit) is used for controlling the conducting state of the switch module in the high-voltage multiplexer; comprising the following steps: a pull-down current generation module 113, an output drive generation module 111, and an output feedback module 112;
the pull-down current generation module 113: converting the bias voltage signal into a pull-down current;
the output drive generation module 111: generating an output driving signal for driving and controlling the on state of the switch module of the high-voltage multiplexer;
the output feedback module 112: and feeding back an output signal of the high-voltage multiplexer switch module, and further generating an output driving signal at the output driving generating module.
FIG. 4 is a functional block diagram of a bias module of the present invention; the bias module 12 includes a pull-up current generation module 121 and a bias voltage generation module 122;
bias voltage generation module 122: converting the input bias current into a bias voltage signal and providing a working current I4 for the pull-up current generating module;
pull-up current generation module 121: the operating current I4 is converted into a pull-up current signal I5 by a current mirror structure.
FIG. 5 is a functional block diagram of a switch module of the present invention; the switch module 13 includes a voltage transmission module 131, a pull-down control module 132, and zener diodes D1 and D2;
the voltage transmission module 131: the input voltage signals of the high-voltage multi-path battery are collected through the control of the pull-down control module 132 and the driving circuit 11;
the pull-down control module 132: the on state of the voltage transmission module is controlled by the different states of the control signals and the driving circuit 11;
the forward end of the zener diode D1 is connected with the pull-up current signal, and the reverse end of the zener diode D1 is connected with the output driving signal;
the positive terminal of the zener diode D2 is connected with the output signal; the reverse end is connected with the output driving signal and D2.
The specific structure of each module is described in detail below:
as shown in fig. 6, a schematic circuit diagram of the driving module of the present invention; the pull-down current generation module 113 amplifier converts an externally input bias voltage signal into a pull-down current. The amplifier is a common source amplifier. Of course, if the bipolar process is adopted, the amplifier can also be a triode structure amplifier of a common-emitter stage. The amplifier is a common source amplifier and comprises an NMOS tube MN8 and a resistor R3; the grid electrode of the MN3 is connected with a bias voltage signal, the source electrode of the MN3 is grounded, and the drain electrode of the MN3 is connected with one end of the resistor R3; the other end of the resistor R3 is connected to the output driver generating module, and provides the pull-down current I3 for the output driver generating module 111.
The output drive generation module 111 is a current mirror with a cascode structure; the input of the output driving generation module 111 is connected with the other end of the resistor R3 in the pull-down current generation module 113; the output of the output drive generation module 111 is an output drive signal. The current mirror of the cascode structure of the output drive generation module 111 comprises PMOS tubes MP8, MP9, MP4 and MP5; the grid electrodes of the PMOS tubes MP8, MP9, MP4 and MP5 and the drain electrode of the MP5 are connected with the other end of the resistor R3; the sources of MP8 and MP9 are connected with the power supply voltage; the drain electrode of MP8 is connected with the source electrode of MP 4; the drain electrode of MP9 is connected with the source electrode of MP5; the drain electrode of MP4 is connected with the output driving signal. The specific PMOS transistors MP4 and MP5 may be double diffusion PMOS transistors (shown schematically as DMP4 and DMP 5).
The output feedback module 112 comprises a PMOS tube MP3 and a resistor R2; the grid electrode of the PMOS tube MP3 is connected with an output signal, the source electrode is connected with the output driving signal, and the drain electrode is grounded through a resistor R2. The specific PMOS MP3 may be a double diffusion PMOS (shown schematically as DMP 3).
The use of double diffused PMOS has the advantage of being able to withstand higher voltages in order to meet the use of voltages that are large if the number of cells in series is large. The double diffusion MOS tube mentioned in the context of the present invention is all to be able to meet the use of higher voltages.
As shown in the schematic circuit diagram of the bias module of the present invention in fig. 7; the bias module 12 includes a pull-up current generation module 121 and a bias voltage generation module 122; the pull-up current generating module 121 converts the operating current I4 into a pull-up current signal I5 through a current mirror structure. The current mirror structure is a current mirror with a cascode structure; a current mirror of a cascode structure; comprises PMOS tubes MP10, MP11, MP6 and MP7; the grid electrodes of the PMOS tubes MP10, MP11, MP6 and MP7 are connected with the drain electrode of the MP7 and the working current signal I4 of the bias voltage generating module; the sources of MP10 and MP11 are connected with power supply voltage; the drain electrode of MP10 is connected with the source electrode of MP 6; the drain electrode of MP11 is connected with the source electrode of MP7; the drain of MP6 is connected with the pull-up current signal. The PMOS tubes MP6 and MP7 are double diffusion PMOS tubes.
The bias voltage generating module 122 includes NMOS transistors MN1, MN2, and MN3; the sources of the NMOS transistors MN1 and MN2 are grounded; the gates of the NMOS transistors MN1, MN2 and MN3 are connected with input bias current signals and bias voltage signals; the drain electrode of the NMOS tube MN2 is connected with the source electrode of the MN3; the drain of NMOS transistor MN3 outputs an operating current signal I4. The NMOS transistor MN3 is a double diffusion NMOS transistor (shown schematically as DMN 3).
As shown in a schematic circuit diagram of the switch module of the present invention in fig. 8, the voltage transmission module 131 includes a resistor R1, and double diffusion PMOS transistors MP1 and MP2; one end of the resistor R1 and the source electrode of the resistor MP1 are connected with the voltage signal VIN of the high-voltage multi-path battery; the other end of the resistor R1 and the grid electrode of the MP1 are connected with a first current signal I1; the drain electrode of MP1 is connected with the drain electrode of MP2; the source electrode of MP2 is connected with the output signal; the gate of MP2 is connected with the pull-up current signal and the second current signal I2.
The pull-down control module 132 includes NMOS transistors MN4, MN5, MN6, and MN7; the sources of MN4 and MN5 are grounded, and the gates are connected with the bias voltage signal; the drains of MN4 and MN5 are respectively connected with the sources of MN6 and MN7; gates of MN6 and MN7 are connected to the control signal; the drain electrode of MN6 is connected with the pull-up current signal and the second current signal I2; NMOS transistors MN6 and MN7 may be double diffusion NMOS transistors (shown schematically as DMN6 and DMN 7).
As a preferred embodiment, a circuit schematic of the high voltage multiplexer of the battery monitor switch of the present invention is shown in fig. 9; the connection of the various components in the drive module 11, bias module 12 and switch module 13 of the high voltage multiplexer. Here, the switch module 13 may be plural in parallel, so that the present invention can be applied to a case where plural batteries are connected in series.
A brief analytical description is made here of the operation of the switch in fig. 9.
When the control signal is at a low level, the voltage transmission module is turned off. The DMN7 and DMN6 tubes are not conducted, no voltage drop exists at the two ends of R1, the DMP1 tube is not conducted, the grid voltage of the DMP2 tube is influenced by the pull-up current signal I5 and pulled to a high level (power supply voltage), and the VSG of the DMP2 tube is switched at the moment DMP2 ＝V outa -V PP < 0, DMP2 will not turn on. The channel is strictly closed (voltage transfer module). This ensures thatWhen a certain switch is selected, other switches cannot be started by mistake.
When the control signal is at a high level, the voltage transmission module is turned on. The DMN7 and DMN6 tubes are conducted, and the voltage drop generated at the two ends of the R1 tube is used for providing stable gate source voltage for the DMP1 tube so as to enable the DMP1 tube to be started. At this time, a pressure drop is generated across R1, VSG DMP1 ＝I b1 ·R 1 Making the DMP1 pipe conduct; the DMP2 tube gate voltage is pulled low, VSG DMP2 ＝V D1 -V D2 The difference between the regulated values of the regulated tubes D1 and D2 makes the DMP2 conduct, and finally makes the voltage of the output signal of the switch group approximately equal to VIN (namely, the output voltage of the voltage transmission module is equal to the input voltage). Other strictly closed channels do not affect the opening of the channel due to the multiplexing drive module 11.
As shown in fig. 10, the high-voltage multiplexer of the battery monitoring switch of the present invention is schematically applied, where a plurality of batteries (n are schematically shown in the figure) are connected in series on the left, one ends of a plurality of switch modules 13 (n+1 are schematically shown in the figure) are respectively connected to one ends of the series battery packs, the other ends of the plurality of switch modules 13 are commonly connected to a driving circuit (driving module 11), and the plurality of switch modules 13 are respectively controlled by control signals and commonly driven by the driving circuit (driving module 11); the switch modules 13 can be respectively conducted to collect the series voltage of different ports of the battery pack. The acquired voltage can be processed by the analog-to-digital converter for subsequent circuits. The biasing module is not illustrated in the figures.
Compared with the prior art, the driving circuit has the advantages of simple structure and high reliability; and multiplexing can be carried out in the high-voltage multiplexer of battery monitoring switch, can guarantee that voltage transmission module is closed strictly, and other switches can not open by mistake simultaneously, and other channels that close strictly do not influence opening of normal channel.
The above description is only of the preferred embodiments of the present invention and is not intended to limit the present invention, but various modifications and variations can be made to the present invention by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the apparatus or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present invention, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
In the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present invention, unless expressly stated or limited otherwise, a first feature "above" or "below" a second feature may include both the first and second features being in direct contact, as well as the first and second features not being in direct contact but being in contact with each other through additional features therebetween. Moreover, a first feature being "above," "over" and "on" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being "under", "below" and "beneath" the second feature includes the first feature being directly under and obliquely below the second feature, or simply means that the first feature is less level than the second feature.
Claims (8)
1. A driving circuit for a high voltage multiplexer, comprising:
the driving circuit is used for controlling the conduction state of the switch module in the high-voltage multiplexer; the driving circuit includes: the device comprises a pull-down current generation module, an output drive generation module and an output feedback module;
a pull-down current generation module: providing a pull-down current for the output drive generation module;
an output drive generation module: generating an output driving signal for driving and controlling the on state of the switch module of the high-voltage multiplexer;
and an output feedback module: and feeding back an output signal of the high-voltage multiplexer switch module, and further generating an output driving signal at the output driving generating module.
2. The drive circuit for a high voltage multiplexer of claim 1, wherein:
the pull-down current generation module converts an externally input bias voltage signal into pull-down current through an amplifier.
3. The drive circuit for a high voltage multiplexer of claim 2, wherein:
the amplifier is a common source amplifier.
4. A driver circuit for a high voltage multiplexer as claimed in claim 3, wherein:
the amplifier is a common source amplifier and comprises an NMOS tube MN8 and a resistor R3;
the grid electrode of the MN8 is connected with a bias voltage signal, the source electrode of the MN8 is grounded, and the drain electrode of the MN8 is connected with one end of the resistor R3;
the other end of the resistor R3 is connected with the output drive generation module, and pull-down current I3 is provided for the output drive generation module.
5. The drive circuit for a high voltage multiplexer of claim 4, wherein:
the output drive generation module is a current mirror with a cascode structure;
the input of the output drive generation module is connected with the other end of the resistor R3 in the pull-down current generation module;
the output of the output drive generation module is an output drive signal.
6. The drive circuit for a high voltage multiplexer of claim 5, wherein:
the current mirror of the cascode structure comprises PMOS tubes MP8, MP9, MP4 and MP5;
the grid electrodes of the PMOS tubes MP8, MP9, MP4 and MP5 and the drain electrode of the MP5 are connected with the other end of the resistor R3;
the sources of the MP8 and the MP9 are connected with a power supply voltage;
the drain electrode of the MP8 is connected with the source electrode of the MP 4;
the drain electrode of the MP9 is connected with the source electrode of the MP5;
the drain electrode of the MP4 is connected with the output driving signal.
7. The drive circuit for a high voltage multiplexer of claim 6, wherein:
the PMOS tubes MP4 and MP5 are double diffusion PMOS tubes.
8. The drive circuit for a high voltage multiplexer of claim 1, wherein:
the output feedback module comprises a PMOS tube MP3 and a resistor R2;
the grid electrode of the PMOS tube MP3 is connected with an output signal, the source electrode is connected with the output driving signal, and the drain electrode is grounded through a resistor R2.
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