CN113659082A - Interface modification-based perovskite solar cell preparation method - Google Patents
Interface modification-based perovskite solar cell preparation method Download PDFInfo
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- 230000004048 modification Effects 0.000 title claims abstract description 20
- 238000012986 modification Methods 0.000 title claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 18
- XMBWDFGMSWQBCA-UHFFFAOYSA-M iodide Chemical compound [I-] XMBWDFGMSWQBCA-UHFFFAOYSA-M 0.000 claims abstract description 12
- 238000004528 spin coating Methods 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 10
- 239000002243 precursor Substances 0.000 claims abstract description 9
- 239000002904 solvent Substances 0.000 claims abstract description 9
- XLSYLQDVLAXIKK-NXEZZACHSA-N (1r,2s)-2-amino-3-fluoro-1-(4-methylsulfonylphenyl)propan-1-ol Chemical compound CS(=O)(=O)C1=CC=C([C@@H](O)[C@H](N)CF)C=C1 XLSYLQDVLAXIKK-NXEZZACHSA-N 0.000 claims abstract description 8
- 230000005525 hole transport Effects 0.000 claims abstract description 8
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 43
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 17
- 238000000137 annealing Methods 0.000 claims description 15
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 claims description 14
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 239000008367 deionised water Substances 0.000 claims description 10
- 229910021641 deionized water Inorganic materials 0.000 claims description 10
- 125000003003 spiro group Chemical group 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 9
- 238000001816 cooling Methods 0.000 claims description 9
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 claims description 8
- 238000001704 evaporation Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000002207 thermal evaporation Methods 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 7
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 7
- 239000000843 powder Substances 0.000 claims description 7
- 230000008020 evaporation Effects 0.000 claims description 6
- QEZYDNSACGFLIC-UHFFFAOYSA-N CN.[I] Chemical compound CN.[I] QEZYDNSACGFLIC-UHFFFAOYSA-N 0.000 claims description 5
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- FZHSXDYFFIMBIB-UHFFFAOYSA-L diiodolead;methanamine Chemical compound NC.I[Pb]I FZHSXDYFFIMBIB-UHFFFAOYSA-L 0.000 claims description 4
- 239000012296 anti-solvent Substances 0.000 claims description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims description 2
- 238000002203 pretreatment Methods 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims 3
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims 1
- SBMMOLKBPGETHC-UHFFFAOYSA-N [I].NC=N Chemical compound [I].NC=N SBMMOLKBPGETHC-UHFFFAOYSA-N 0.000 claims 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims 1
- 229910052794 bromium Inorganic materials 0.000 claims 1
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 37
- 239000010409 thin film Substances 0.000 abstract description 3
- 230000007547 defect Effects 0.000 description 13
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 9
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 8
- -1 florfenicol amine iodine salt Chemical class 0.000 description 8
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 7
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 description 6
- 150000001412 amines Chemical class 0.000 description 6
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 3
- 238000001914 filtration Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910052744 lithium Inorganic materials 0.000 description 3
- 238000009987 spinning Methods 0.000 description 3
- IKUCKMMEQAYNPI-UHFFFAOYSA-N [Pb].CN.[I] Chemical compound [Pb].CN.[I] IKUCKMMEQAYNPI-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- LLWRXQXPJMPHLR-UHFFFAOYSA-N methylazanium;iodide Chemical compound [I-].[NH3+]C LLWRXQXPJMPHLR-UHFFFAOYSA-N 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- HGFAGBHAGYXJKZ-UHFFFAOYSA-N fluoromethanesulfonamide Chemical compound NS(=O)(=O)CF HGFAGBHAGYXJKZ-UHFFFAOYSA-N 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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Abstract
The invention discloses a perovskite solar cell preparation method based on interface modification, which comprises the following steps: preparing a precursor solution; pretreating a substrate; preparing an electron transport layer; preparing a perovskite film layer; preparing a modification layer: dissolving florfenicol amine iodide salt in an IPA solvent, and spin-coating on the perovskite film layer to obtain the florfenicol amine iodide salt; preparing a hole transport layer; and (4) preparing an electrode. The method can improve the film forming property of the perovskite thin film, improve the efficiency of the perovskite battery and the thermal stability of the perovskite battery, and data show that the efficiency is improved by 13 percent.
Description
Technical Field
The invention relates to a preparation method of a solar cell, in particular to a preparation method of a perovskite solar cell based on interface modification.
Background
As a clean energy source, solar energy can meet the increasing global energy demand. Among the numerous optoelectronic devices, perovskite solar cells are of interest due to their higher power conversion efficiency and lower manufacturing costs.
In the prior art, the commercial bottleneck of the perovskite battery is mainly the insufficiency of the stability and the efficiency of the battery, and the continuous working requirement of the commercial battery can not be met. A source of perovskite cell instability and inefficiency is the defect state in the perovskite film layer. Defects in the perovskite film layer in the perovskite solar cell can reduce the photoelectric efficiency and stability of the device, limit the application of the perovskite cell, and the defects are more concentrated on the surface of the perovskite film layer. In order to reduce the defect density of the perovskite thin film and improve the stability of the battery, the film layer can be passivated and modified by introducing additives and the like so as to reduce the defect state density.
Disclosure of Invention
The purpose of the invention is as follows: the invention aims to provide a perovskite solar cell preparation method based on interface modification, which can improve the efficiency and the thermal stability of the cell.
The technical scheme is as follows: the invention provides a perovskite solar cell preparation method based on interface modification, which comprises the following steps:
(1) preparing a precursor solution; (2) pretreating a substrate; (3) preparing an electron transport layer; (4) preparing a perovskite film layer; (5) preparing a modification layer: dissolving florfenicol amine iodide salt in an IPA solvent, and spin-coating on the perovskite film layer to obtain the florfenicol amine iodide salt; (6) preparing a hole transport layer; (7) and (4) preparing an electrode.
Furthermore, the layers are connected by spin coating or evaporation.
Further, the step (2) is a pretreatment method of the substrate: the ITO glass substrate is firstly ultrasonically cleaned in deionized water, then ultrasonically cleaned in acetone, finally ultrasonically cleaned in isopropanol, then blow-dried by a nitrogen gun, and placed in an ultraviolet ozone processor for treatment.
Further, the preparation method of the electron transport layer in the step (3) comprises the following steps: SnO2The colloidal solution is dissolved in deionized water, and the filtered solution is spin-coated on an ITO glass substrate and annealed.
Further, the preparation method of the perovskite film layer in the step (4) comprises the following steps: spin coating of lead iodide solution on SnO2Drying the film layer, and spin-coating the prepared FAI/MABr/MACl solution to PbI2And (4) annealing and cooling the film layer.
Further, the preparation method of the perovskite film layer in the step (4) comprises the following steps: the methylamine lead iodine solution is coated on SnO in a spinning mode2And (3) uniformly dropwise adding an anti-solvent toluene on the film layer, then annealing in a nitrogen atmosphere, and cooling.
Further, the preparation method of the perovskite film layer in the step (4) comprises the following steps: and (3) jointly thermally evaporating the lead iodide powder and the methylamine iodine powder, stopping thermal evaporation, annealing the mixed film layer of the lead iodide and the methylamine iodine in a nitrogen atmosphere, fully reacting to generate perovskite, and cooling for later use.
Further, preparation of the (6) hole transport layer: and spin-coating the doped spiro solution on the modified perovskite film layer.
A source of perovskite cell instability and inefficiency is the defect state in the perovskite film layer. According to the invention, the defect state is effectively passivated by introducing the efficient passivation group, so that the density of the defect state is reduced, the extraction and transmission capability of the charge is improved, and the stability and the conversion efficiency of the battery are improved. We introduce the efficient membrane layer passivating agent of florfenicol amine iodine salt (C)10H14NO3FS · HI) to perform passivation of the film layer and reduction of defect state density. Fluorothiamphenicol amine iodide (C)10H14NO3FS HI) has NH3 +And S ═ O bonds, the electron cloud which is abundant or deficient in the passivating agent can form interaction with different defects, so that defects such as iodine vacancies are effectively passivated, the defects are stabilized and the density of defect states is reduced.
Has the advantages that: the method can improve the film forming property of the perovskite thin film, improve the efficiency of the perovskite battery and the thermal stability of the perovskite battery, and data shows that the efficiency of the interface modified perovskite battery is improved by 13 percent compared with the untreated perovskite battery.
Drawings
FIG. 1 is the I-V curves of example 1 perovskite cells treated and untreated via iodonium salts of florfenicol amine;
FIG. 2 is a stability curve at 85 ℃ for example 2 perovskite cells treated with fluoromethylsulfonamide iodonium salt and untreated;
FIG. 3 is the I-V curve of perovskite cells of example 3 treated and untreated via iodonium salt of florfenicol amine.
Detailed Description
Example 1
(1) Preparing a precursor solution:
the precursor solution is tin dioxide (SnO)2) Colloidal solution, lead iodide (PbI)2) Solution, amimidine/methylamine bromide/methylamine chloride (FAI/MABr/MACl) solution, fluoromethylsulfonamide iodonium salt (C)10H14NO3FS, HI), 2, 2 ', 7, 7' -tetrakis [ N, N-bis (4-methoxyphenyl) amino]-9, 9' -spirobifluorene (spiro-OMeTAD) solution and lithium bistrifluoromethanesulfonylimide (Li-TFSI) solution.
0.5mL of SnO2The colloidal solution of (a) was dissolved in 2.5mL of deionized water, stirred with shaking, and filtered using a 0.45 μm filter cartridge for use.
630mg of PbI2Dissolved in 0.95mL of N-N Dimethylformamide (DMF) and 0.1mL of dimethyl sulfoxide (DMSO), heated at 100 ℃ and stirred for 30min to dissolve completely, and filtered using a 0.45 μm filter element for use.
1100mg of FAI, 110mg of MABr, and 120mg of MACl powder were dissolved in 16mL of isopropyl alcohol solution (IPA), sufficiently stirred until the solution was clear, and filtered using a 0.45 μm filter cartridge for use.
Fluorothiamphenicol amine iodide (C)10H14NO3FS. HI) was dissolved in IPA solvent at a concentration of 5 mg/mL.
520mg of Li-TFSI was dissolved in 1mL of acetonitrile at a concentration of 520 mg/mL. 72.3mg of spiro-oMeTAD was dissolved in 1mL of chlorobenzene solution, and 17.5. mu.L of Li-TFSI solution and 28.8. mu.L of tetra-t-butylpyridine were added to 1mL of spiro solution and filtered using a 0.45 μm filter core for use.
(2) Pretreatment of the substrate:
the ITO glass substrate was first ultrasonically cleaned in deionized water for 30 minutes, then ultrasonically cleaned in acetone for 30 minutes, and finally ultrasonically cleaned in isopropyl alcohol (IPA) for 30 minutes, then blow-dried with a nitrogen gun, and placed in an ultraviolet ozone processor for 30 minutes for standby.
(3) Preparation of an electron transport layer:
filtering the SnO2The colloidal solution was spin-coated on an ITO substrate at a speed of 3000rpm for 30s, followed by annealing at 150 ℃ for 30 min.
(4) Preparing a perovskite film layer:
the prepared lead iodide solution is coated on SnO in a spinning way2On the film, the speed was 1600rpm and the time was 40 s. Subsequently, the mixture was dried naturally for 3 minutes under a nitrogen atmosphere. The formulated FAI/MABr/MACl solution was then spin coated onto PbI2On the film, the speed is 1800rpm, the time is 30s, then annealing at 140 ℃ for 15min, cooling and standby.
(5) Preparing a modification layer:
fluorothiamphenicol amine iodide salt (C) dissolved in IPA solvent10H14NO3FS · HI) was spin coated on the perovskite film layer at 2000rpm for 30s followed by annealing at 100 ℃ for 2 min.
(6) Preparation of hole transport layer:
the doped spiro solution was spin coated on the modified perovskite film layer at 3000rpm for 30 s.
(7) Preparing an electrode:
a layer of 100nm gold (Au) is evaporated on the surface of the spiro by a thermal evaporation mode to be used as an electrode.
Table 1 example 1 perovskite cell photoelectric parameters treated and untreated with fluoromethylsulfonamide amine iodide salt
Example 2
(1) Preparing a precursor solution:
the precursor solution is tin dioxide (SnO)2) Colloidal solution of methylamine lead iodide (MAI + PbI)2) Solution, Fluorothiamphenicol amine iodide salt (C)10H14NO3FS, HI), 2, 2 ', 7, 7' -tetrakis [ N, N-bis (4-methoxyphenyl) amino]-9, 9' -spirobifluorene (spiro-OMeTAD) solution and lithium bistrifluoromethanesulfonylimide (Li-TFSI) solution.
0.5mL of SnO2The colloidal solution of (a) was dissolved in 2.5mL of deionized water, stirred with shaking, and filtered using a 0.45 μm filter cartridge for use.
461mg of PbI2And 159mg of MAI were dissolved in 0.90mL of N-Dimethylformamide (DMF) and 0.1mL of dimethyl sulfoxide (DMSO), stirred at 100 ℃ for 30min until complete dissolution, and filtered using a 0.45 μm filter element for use.
Fluorothiamphenicol amine iodide (C)10H14NO3FS. HI) was dissolved in IPA solvent at a concentration of 4 mg/mL.
520mg of Li-TFSI was dissolved in 1mL of acetonitrile at a concentration of 520 mg/mL. 72.3mg of spiro-oMeTAD was dissolved in 1mL of chlorobenzene solution, and 17.5. mu.L of Li-TFSI solution and 28.8. mu.L of tetra-t-butylpyridine were added to 1mL of spiro solution and filtered using a 0.45 μm filter core for use.
(2) Pretreatment of the substrate:
the ITO glass substrate was first ultrasonically cleaned in deionized water for 30 minutes, then ultrasonically cleaned in acetone for 30 minutes, finally ultrasonically cleaned in isopropyl alcohol for 30 minutes, then blow-dried with a nitrogen gun, and treated in an ultraviolet ozone processor for 30 minutes for future use.
(3) Preparation of an electron transport layer:
filtering the SnO2The colloidal solution was spin-coated on an ITO substrate at a speed of 3000rpm for 30s, followed by annealing at 150 ℃ for 30 min.
(4) Preparing a perovskite film layer:
the prepared methylamine lead iodine solution is coated on SnO in a spinning way2On the film, the speed was 3000rpm and the time was 30 s. And (3) at the time of spin coating for 10s, uniformly dropwise adding an anti-solvent toluene on the film layer, then annealing at 100 ℃ for 30min in a nitrogen atmosphere, and cooling for later use.
(5) Preparing a modification layer:
fluorothiamphenicol amine iodide salt (C) dissolved in IPA solvent10H14NO3FS · HI) was spin coated on the perovskite film layer at 2000rpm for 30s followed by annealing at 100 ℃ for 2 min.
(6) Preparation of hole transport layer:
the doped spiro solution was spin coated on the modified perovskite film layer at 3000rpm for 30 s.
(7) Preparing an electrode:
a layer of 100nm gold (Au) is evaporated on the surface of the spiro by a thermal evaporation mode to be used as an electrode.
Example 3
(1) Preparing a precursor solution:
the precursor solution is tin dioxide (SnO)2) Colloidal solution, Fluorothiamphenicol amine iodide salt (C)10H14NO3FS, HI), 2, 2 ', 7, 7' -tetrakis [ N, N-bis (4-methoxyphenyl) amino]-9, 9' -spirobifluorene (spiro-OMeTAD) solution and lithium bistrifluoromethanesulfonylimide (Li-TFSI) solution.
0.5mL of SnO2The colloidal solution of (a) was dissolved in 2.5mL of deionized water, stirred with shaking, and filtered using a 0.45 μm filter element.
Fluorothiamphenicol amine iodide (C)10H14NO3FS. HI) was dissolved in IPA solvent at a concentration of 6 mg/mL.
520mg of Li-TFSI was dissolved in 1mL of acetonitrile at a concentration of 520 mg/mL. 72.3mg of spiro-oMeTAD was dissolved in 1mL of chlorobenzene solution, and 17.5. mu.L of Li-TFSI solution and 28.8. mu.L of tetra-t-butylpyridine were added to 1mL of spiro solution and filtered using a 0.45 μm filter core for use.
(2) Pretreatment of the substrate:
the ITO glass substrate was first ultrasonically cleaned in deionized water for 30 minutes, then ultrasonically cleaned in acetone for 30 minutes, finally ultrasonically cleaned in isopropyl alcohol for 30 minutes, then blow-dried with a nitrogen gun, and treated in an ultraviolet ozone processor for 30 minutes for future use.
(3) Preparation of an electron transport layer:
SnO after filtering2The solution of the colloid was spin-coated on the ITO substrate at a speed of 3000rpm for 30s, followed by annealing at 150 ℃ for 30 min.
(4) Preparing a perovskite film layer:
the perovskite film layer adopts a thermal evaporation mode, the lead iodide powder and the methylamine iodine powder adopt a common thermal evaporation mode, and the vacuum degree of an evaporation instrument is 1.2 x 10-4Pa, the evaporation temperature of lead iodide is 350 ℃, the evaporation temperature of methylamine iodide is 120 ℃, the evaporation rate ratio of the two film layers is controlled at 1: 1.2, and the thermal evaporation is stopped when the thickness of the two film layers reaches 600 nm. And then annealing the mixed film layer of lead iodide and methylamine iodide for 30min at 100 ℃ in the nitrogen atmosphere, fully reacting to generate perovskite, and cooling for later use.
(5) Preparing a modification layer:
fluorothiamphenicol amine iodide salt (C) dissolved in IPA solvent10H14NO3FS · HI) was spin coated on the perovskite film layer at 2000rpm for 30s followed by annealing at 100 ℃ for 2 min.
(6) Preparation of hole transport layer:
the doped spiro solution was spin coated on the modified perovskite film layer at 3000rpm for 30 s.
(7) Preparing an electrode:
a layer of 100nm gold (Au) was deposited on the surface of spire by thermal evaporation as an electrode.
Table 2 example 3 perovskite cell photoelectric parameters treated and untreated via fluoromethylsulfonamide iodonium salt
Claims (8)
1. A perovskite solar cell preparation method based on interface modification is characterized in that: the method comprises the following steps: (1) preparing a precursor solution; (2) pretreating a substrate; (3) preparing an electron transport layer; (4) preparing a perovskite film layer; (5) preparing a modification layer: dissolving florfenicol amine iodide salt in an IPA solvent, and spin-coating on the perovskite film layer to obtain the florfenicol amine iodide salt; (6) preparing a hole transport layer; (7) and (4) preparing an electrode.
2. The interface modification-based perovskite solar cell fabrication method of claim 1, wherein: the layers are connected by spin coating or evaporation.
3. The interface modification-based perovskite solar cell fabrication method of claim 1, wherein: the step (2) is a pretreatment method of the substrate: the ITO glass substrate is firstly ultrasonically cleaned in deionized water, then ultrasonically cleaned in acetone, finally ultrasonically cleaned in isopropanol, then blow-dried by a nitrogen gun, and placed in an ultraviolet ozone processor for treatment.
4. The interface modification-based perovskite solar cell fabrication method of claim 1, wherein: the preparation method of the electron transport layer in the step (3) comprises the following steps: mixing tin dioxide (SnO)2) The colloidal solution is dissolved in deionized water, and the filtered solution is spin-coated on an ITO glass substrate and annealed.
5. The interface modification-based perovskite solar cell fabrication method of claim 1, wherein: the preparation method of the perovskite film layer in the step (4) comprises the following steps: mixing lead iodide (PbI)2) Solution spin coating of SnO2Coating with film, drying, and spin-coating prepared formamidine iodine/methylamine bromine/methylamine chloride (FAI/MABr/MACl) solution to PbI2And (4) annealing and cooling the film layer.
6. The interface modification-based perovskite solar cell fabrication method of claim 1, wherein: the preparation method of the perovskite film layer in the step (4) comprises the following steps: mixing methylamine lead iodide (PbI)2+ MAI) solution spin-coated SnO2And (3) uniformly dropwise adding an anti-solvent toluene on the film layer, then annealing in a nitrogen atmosphere, and cooling.
7. The interface modification-based perovskite solar cell fabrication method of claim 1, wherein: the preparation method of the perovskite film layer in the step (4) comprises the following steps: and (3) jointly thermally evaporating the lead iodide powder and the methylamine iodine powder, stopping thermal evaporation, annealing the mixed film layer of the lead iodide and the methylamine iodine in a nitrogen atmosphere, fully reacting to generate perovskite, and cooling for later use.
8. The interface modification-based perovskite solar cell fabrication method of claim 1, wherein: the preparation of the (6) hole transport layer: and spin-coating the doped spiro solution on the modified perovskite film layer.
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|---|---|---|---|---|
| CN114141957A (en) * | 2021-11-30 | 2022-03-04 | 华能新能源股份有限公司 | Perovskite solar cell and preparation method thereof |
| CN114937743A (en) * | 2022-05-12 | 2022-08-23 | 苏州大学 | Formamidine-based organic/inorganic perovskite-based solar cell and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108321300A (en) * | 2018-02-06 | 2018-07-24 | 杭州纤纳光电科技有限公司 | A kind of perovskite thin film of admixed with additives and its preparation method and application |
| US20200225367A1 (en) * | 2017-09-29 | 2020-07-16 | Northwestern University | Thick alkali metal halide perovskite films for low dose flat panel x-ray imagers |
-
2021
- 2021-08-17 CN CN202110945599.6A patent/CN113659082B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20200225367A1 (en) * | 2017-09-29 | 2020-07-16 | Northwestern University | Thick alkali metal halide perovskite films for low dose flat panel x-ray imagers |
| CN108321300A (en) * | 2018-02-06 | 2018-07-24 | 杭州纤纳光电科技有限公司 | A kind of perovskite thin film of admixed with additives and its preparation method and application |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114141957A (en) * | 2021-11-30 | 2022-03-04 | 华能新能源股份有限公司 | Perovskite solar cell and preparation method thereof |
| CN114141957B (en) * | 2021-11-30 | 2023-04-18 | 华能新能源股份有限公司 | Perovskite solar cell and preparation method thereof |
| CN114937743A (en) * | 2022-05-12 | 2022-08-23 | 苏州大学 | Formamidine-based organic/inorganic perovskite-based solar cell and preparation method thereof |
| CN114937743B (en) * | 2022-05-12 | 2023-07-11 | 苏州大学 | Organic/inorganic perovskite solar cell based on formamidino and preparation method thereof |
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