CN116507139B - Long-branched chain alkyl ammonium modified formamidine perovskite solar cell and preparation method thereof - Google Patents
Long-branched chain alkyl ammonium modified formamidine perovskite solar cell and preparation method thereof Download PDFInfo
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- CN116507139B CN116507139B CN202310787487.1A CN202310787487A CN116507139B CN 116507139 B CN116507139 B CN 116507139B CN 202310787487 A CN202310787487 A CN 202310787487A CN 116507139 B CN116507139 B CN 116507139B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- -1 alkyl ammonium modified formamidine Chemical class 0.000 title claims description 17
- PNKUSGQVOMIXLU-UHFFFAOYSA-N Formamidine Chemical compound NC=N PNKUSGQVOMIXLU-UHFFFAOYSA-N 0.000 claims abstract description 49
- 238000012986 modification Methods 0.000 claims abstract description 36
- 230000004048 modification Effects 0.000 claims abstract description 36
- 238000000137 annealing Methods 0.000 claims abstract description 35
- 125000005210 alkyl ammonium group Chemical group 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 26
- 230000005525 hole transport Effects 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims description 45
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- HEGUXAZWCQVLPV-UHFFFAOYSA-N 2-hexyldecan-1-amine Chemical compound CCCCCCCCC(CN)CCCCCC HEGUXAZWCQVLPV-UHFFFAOYSA-N 0.000 claims description 9
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 claims description 9
- 238000004528 spin coating Methods 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000003960 organic solvent Substances 0.000 claims description 6
- NNJUHKOAOWZHHZ-UHFFFAOYSA-N 2-heptylundecan-1-amine Chemical compound CCCCCCCCCC(CN)CCCCCCC NNJUHKOAOWZHHZ-UHFFFAOYSA-N 0.000 claims description 4
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 claims description 4
- VDNQHHBRKZQBPY-UHFFFAOYSA-N 2-octyldodecan-1-amine Chemical compound CCCCCCCCCCC(CN)CCCCCCCC VDNQHHBRKZQBPY-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 claims 4
- 230000007547 defect Effects 0.000 abstract description 14
- 238000006243 chemical reaction Methods 0.000 abstract description 11
- 230000008569 process Effects 0.000 abstract description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 8
- 125000000217 alkyl group Chemical group 0.000 abstract description 6
- 239000002841 Lewis acid Substances 0.000 abstract description 3
- 230000004888 barrier function Effects 0.000 abstract description 3
- 230000003628 erosive effect Effects 0.000 abstract description 3
- 230000002209 hydrophobic effect Effects 0.000 abstract description 3
- 150000007517 lewis acids Chemical class 0.000 abstract description 3
- 238000002161 passivation Methods 0.000 abstract description 3
- 239000000243 solution Substances 0.000 description 32
- 239000002243 precursor Substances 0.000 description 20
- 239000010408 film Substances 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 239000002904 solvent Substances 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 6
- 150000003973 alkyl amines Chemical class 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 6
- 239000007788 liquid Substances 0.000 description 5
- 229910006404 SnO 2 Inorganic materials 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 3
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- FGDZQCVHDSGLHJ-UHFFFAOYSA-M rubidium chloride Chemical compound [Cl-].[Rb+] FGDZQCVHDSGLHJ-UHFFFAOYSA-M 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- KIMPAVBWSFLENS-UHFFFAOYSA-N 2-carbazol-9-ylethylphosphonic acid Chemical compound C1=CC=CC=2C3=CC=CC=C3N(C1=2)CCP(O)(O)=O KIMPAVBWSFLENS-UHFFFAOYSA-N 0.000 description 1
- YSHMQTRICHYLGF-UHFFFAOYSA-N 4-tert-butylpyridine Chemical compound CC(C)(C)C1=CC=NC=C1 YSHMQTRICHYLGF-UHFFFAOYSA-N 0.000 description 1
- 229920001167 Poly(triaryl amine) Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910003087 TiOx Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910003473 lithium bis(trifluoromethanesulfonyl)imide Inorganic materials 0.000 description 1
- QSZMZKBZAYQGRS-UHFFFAOYSA-N lithium;bis(trifluoromethylsulfonyl)azanide Chemical compound [Li+].FC(F)(F)S(=O)(=O)[N-]S(=O)(=O)C(F)(F)F QSZMZKBZAYQGRS-UHFFFAOYSA-N 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000013112 stability test Methods 0.000 description 1
- 239000011550 stock solution Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/88—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention belongs to the technical field of perovskite batteries, and particularly relates to a formamidine perovskite solar cell modified by long-chain branched chain alkyl ammonium and a preparation method thereof. The invention prepares a modification layer based on long-branched chain alkyl ammonium between the formamidine perovskite active layer and the hole transport layer, on one hand, the-NH in the long-branched chain alkyl ammonium 2 The device has the lone pair electrons which can coordinate with the lewis acid defects with positive charges through coordination bonds, so that the defects of the formamidine perovskite active layer interface can be passivated, the defect state density is reduced, the non-radiative energy loss is reduced, and the photoelectric conversion efficiency of the device is improved; on the other hand, the long branched alkyl has strong hydrophobicity, long alkyl chains are distributed on the surface of the film to form a hydrophobic passivation layer in the thermal annealing process, and a barrier can be formed at the interface of the formamidine perovskite active layer to resist the erosion of water vapor. And finally, the photoelectric conversion efficiency and stability of the formamidine perovskite solar cell device modified by the long-chain branched chain alkyl ammonium are improved through a simple process.
Description
Technical Field
The invention belongs to the technical field of perovskite batteries, and particularly relates to a formamidine perovskite solar cell modified by long-chain branched chain alkyl ammonium and a preparation method thereof.
Background
The metal halide perovskite solar cell is a novel green energy power generation technology, and has been receiving attention because of its characteristics such as high photoelectric conversion efficiency, capability of large-area processing by a solution method, capability of being combined with a silicon solar cell to prepare a stacked solar cell, and the like. As a research hotspot in the field of solar power generation, the photoelectric conversion efficiency of the perovskite solar cell is improved from the initial 3.8% to 25.7% in a period of more than ten years, and the perovskite solar cell has a wide application prospect.
The formamidine perovskite polycrystalline ion crystal film widely adopted at present is mostly prepared based on a solution treatment process, which inevitably generates high-density defects in the film crystallization process, wherein the defects possibly exist at bulk crystal grains, crystal boundaries and interfaces, and various types of defects are main reasons for causing serious non-radiative recombination inside the device, so that the improvement of the photoelectric conversion efficiency of the solar cell device is limited. Meanwhile, the formamidine perovskite active layer is sensitive to humidity, and water vapor in the air can erode the perovskite active layer in the environment with higher humidity, so that the stability of the formamidine perovskite solar cell is seriously affected.
Disclosure of Invention
Therefore, the technical problem to be solved by the invention is to overcome the defects in the prior art, and a method capable of simultaneously reducing the interface defect state density of the formamidine perovskite active layer and resisting the attack of water vapor in the air on the perovskite active layer is provided.
Therefore, the invention provides the following technical scheme:
the invention provides a formamidine perovskite solar cell modified by long-chain branched chain alkyl ammonium, wherein a long-chain branched chain alkyl ammonium film is prepared between a formamidine perovskite active layer and a hole transport layer and is used as a modification layer.
Optionally, the long-chain branched alkylamine is selected from one of 2-hexyl-1-decylamine, 2-heptyl undecylamine and 2-octyl dodecylamine.
Optionally, the organic electroluminescent device comprises a transparent conductive substrate layer, an electron transport layer, a formamidine perovskite active layer, a modification layer, a hole transport layer and a metal back electrode which are sequentially arranged.
The invention also provides a preparation method of the long-chain branched chain alkyl ammonium modified formamidine perovskite solar cell, which comprises the following steps: sequentially preparing an electron transport layer, a formamidine perovskite active layer, a modification layer, a hole transport layer and a metal back electrode on the surface of the transparent conductive substrate layer;
the preparation method of the modification layer comprises the following steps:
and (3) dissolving long-chain branched alkyl amine in an organic solvent, spin-coating the long-chain branched alkyl amine on the surface of the formamidine perovskite active layer, and annealing to obtain the modification layer.
Optionally, the organic solvent is at least one of isopropanol, chlorobenzene, ethanol and ethyl acetate.
Optionally, the concentration of the long-chain branched alkyl amine in the organic solvent is 0.1 mg/mL-2 mg/mL.
Optionally, the rotation speed of the spin coating step is 2000-8000 rpm, and the time is 10-60 s.
Optionally, the annealing temperature in the annealing step is 80-150 ℃ and the annealing time is 5-30 min.
Optionally, the thickness of the modification layer is 10 nm-1000 nm.
Specifically, the preparation method of the long-chain branched chain alkyl ammonium modified formamidine perovskite solar cell provided by the invention comprises the following specific steps:
step 1: ultrasonically cleaning an FTO glass substrate by deionized water, acetone and isopropanol respectively in sequence, and drying the solvent remained on the glass substrate by nitrogen flow to obtain a clean transparent conductive substrate;
step 2: placing the conductive substrate cleaned in the step 1 on a spin coater after UVO treatment, sucking tin dioxide nanocrystalline solution by using a pipetting gun, uniformly coating the tin dioxide nanocrystalline solution on the surface of the substrate, starting the spin coater to rotate at a high speed, placing the substrate on a hot table after the spin is stopped, and annealing in an air environment to obtain an electron transport layer;
step 3: placing the substrate subjected to UVO treatment in the step 2 on a spin coater in a glove box, and sucking the prepared lead iodide (PbI) by using a pipette 2 ) The precursor liquid is uniformly coated on the surface of a substrate, a spin coater is started to rotate at a high speed, the substrate is placed on a hot table in a glove box to be annealed after the spin is stopped, the substrate is put back on the spin coater after the annealing is finished and the substrate is cooled to the room temperature, the prepared formamidine hydroiodidate (FAI) precursor liquid is absorbed by a liquid transferring gun, uniformly coated on the surface of the substrate and rapidly started to rotate at a high speedAfter the rotation is stopped, placing the substrate on a hot bench to anneal in an air environment to obtain a formamidine perovskite active layer;
step 4: placing the substrate in the step 3 on a spin coater in a glove box, sucking the prepared long-chain branched alkyl ammonium precursor liquid by using a liquid-transferring gun, uniformly coating the long-chain branched alkyl ammonium precursor liquid on the surface of a substrate, starting the spin coater to rotate at a high speed, and after the spin is stopped, placing the substrate on a hot table in the glove box for annealing to prepare a long-chain branched alkyl ammonium film;
step 5: placing the substrate in the step 4 on a spin coater in a glove box, sucking the prepared hole transport layer solution by using a pipette, uniformly coating the solution on the surface of a substrate, starting the spin coater to rotate at a high speed, placing the substrate in a dry air environment after the rotation is stopped, and oxidizing to obtain a hole transport layer;
step 6: and 5, preparing a metal back electrode on the hole transport layer by adopting a thermal evaporation mode on the substrate in the step 5.
Further, in the step 1, ultrasonic cleaning is performed by using each solvent for 15-30 min.
Further, in the step 2, the spin speed of the spin coater is 3000-8000 rpm, the spin time is 30-60 s, the annealing temperature of a hot stage is 100-150 ℃, and the annealing time is 30-60 min.
Further, the pipette draws PbI in step 3 2 The volume of the precursor solution or FAI precursor solution is 20 mu L-100 mu L, the rotating speed of a spin coater is 2000 rpm-8000 rpm, the rotating time is 30 s-100 s, the annealing temperature of a hot stage is 80 ℃ to 150 ℃, and the annealing time is 1 min-30 min.
Further, in the step 5, the volume of the solution of the hole transport layer is 30-80 mu L, the rotating speed of the spin coater is 3000-8000 rpm, the rotating time is 30-60 s, and the oxidizing time is 12-24 h.
Further, the pressure in the vapor deposition cabin in the vapor deposition in the step 6 is 9×10 -5 Pa, the thickness of the molybdenum oxide is 8nm, and the thickness of the metal Ag electrode is 80 nm-120 nm.
The technical scheme of the invention has the following advantages:
the invention provides a long-branched chain alkyl ammonium modified formamidine perovskite solar cell, which comprises a formamidine perovskite active layer and a hole transport layerA decorative layer is arranged between the two layers; wherein the modification layer is a long-chain branched alkyl amine film layer. Compared with the prior art, the invention has the following beneficial technical effects: in one aspect, the-NH group in a long chain branched alkyl ammonium 2 The device has the lone pair electrons which can coordinate with the lewis acid defects with positive charges through coordination bonds, so that the defects of the formamidine perovskite active layer interface can be passivated, the defect state density is reduced, the non-radiative energy loss is reduced, and the photoelectric conversion efficiency of the device is improved; on the other hand, the long branched alkyl has strong hydrophobicity, long alkyl chains are distributed on the surface of the film to form a hydrophobic passivation layer in the thermal annealing process, and a barrier can be formed at the interface of the formamidine perovskite active layer to resist the erosion of water vapor. And finally, the photoelectric conversion efficiency and stability of the perovskite solar cell device are improved through a simple process.
The preparation method of the formamidine perovskite solar cell modified by the long-chain branched chain alkyl ammonium provided by the invention has the advantages of simple process, mild and easily controlled conditions and wide application prospect.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a long-chain branched alkyl ammonium modified formamidine perovskite solar cell provided by the invention;
FIG. 2 is a schematic illustration of formamidine perovskite solar cell provided in examples 1-3 and comparative example of the inventionJ-VA graph;
FIG. 3 is a schematic diagram of a formamidine perovskite solar cell provided in example 1, example 4 and example 5 of the present inventionJ-VA graph;
fig. 4 is a graph of normalized energy conversion efficiency versus time for formamidine perovskite solar cells of examples 1-5 and comparative example of the invention.
Reference numerals:
1. a transparent conductive base layer; 2. an electron transport layer; 3. formamidine perovskite active layer; 4. a modification layer; 5. a hole transport layer; 6. a metal back electrode.
Detailed Description
The following examples are provided for a better understanding of the present invention and are not limited to the preferred embodiments described herein, but are not intended to limit the scope of the invention, any product which is the same or similar to the present invention, whether in light of the present teachings or in combination with other prior art features, falls within the scope of the present invention.
The specific experimental procedures or conditions are not noted in the examples and may be followed by the operations or conditions of conventional experimental procedures described in the literature in this field. The reagents or apparatus used were conventional reagent products commercially available without the manufacturer's knowledge.
The invention provides a formamidine perovskite solar cell modified by long-chain branched chain alkyl ammonium, wherein a modification layer is arranged between a formamidine perovskite active layer and a hole transport layer;
the modification layer is a long-chain branched alkyl amine film layer, and specifically, as shown in fig. 1, the modification layer comprises a transparent conductive substrate layer 1, an electron transport layer 2, a formamidine perovskite active layer 3, a modification layer 4, a hole transport layer 5 and a metal back electrode 6 which are sequentially arranged to obtain a perovskite solar cell;
in the present invention, the transparent conductive substrate is preferably ITO glass, FTO glass, AZO glass, or conductive PET, more preferably FTO glass. The source of the transparent conductive substrate is not particularly limited in the present invention, and commercially available products known to those skilled in the art may be used. In the invention, before the transparent conductive substrate is used, deionized water, acetone and isopropanol are preferably respectively cleaned for 15-30 min, and then dried by a nitrogen gun.
In the present invention, the electron transport layer is preferably SnO 2 TiOx, niOx, cuOx, cuSCN, cuPc or C 60 And derivatives thereof, more preferably SnO 2 . The thickness of the electron transport layer is preferably 10nm to 200m, more preferably 20nm to 100nm. The method for forming the electron transport layer on the conductive substrate is not particularly limited, and a method for preparing the electron transport layer, which is well known to those skilled in the art, may be used.
Typically, but not by way of limitation, in the present invention the formamidine perovskite precursor solution thin film crystal structure is FAPbI 3 . On this basis, a perovskite precursor solution capable of forming a thin film of the perovskite precursor solution, which is well known to those skilled in the art, may be used, and the method for preparing the perovskite precursor solution is not particularly limited by those skilled in the art.
In the invention, the modification layer is a long-chain branched alkyl ammonium film, and the long-chain branched alkyl ammonium is preferably one of 2-hexyl-1-decylamine, 2-heptyl undecylamine and 2-octyl dodecylamine. The long-chain branched alkyl ammonium precursor solution is preferably one of IPA, ethanol and ethyl acetate, and more preferably the solvent of the modification layer precursor solution is IPA. The concentration of the modification layer precursor solution is 0.1 mg/mL-2 mg/mL, preferably 0.5 mg/mL-2 mg/mL.
In the present invention, the preparation method of the modification layer precursor solution preferably comprises: dissolving long-chain branched alkyl ammonium in a solvent, stirring at room temperature until the long-chain branched alkyl ammonium is completely dissolved, and filtering impurities in the mixed solution by using a polytetrafluoroethylene filter head (0.22 mu m) to obtain a pure modification layer precursor solution.
In the invention, the preparation method of the long-chain branched alkyl ammonium modified layer is preferably a spin coating method, and the preparation process is preferably specifically as follows: placing the substrate on a spin coater in a glove box, sucking 30-100 mu L of prepared modification layer precursor solution by using a pipette, uniformly coating the solution on the surface of a substrate, starting the spin coater to rotate at a high speed of 2000-8000 rpm for 10-60 s, placing the substrate on a heat table in the glove box for annealing after the spin is stopped, and obtaining the long-chain branched alkyl ammonium modification layer after the annealing is completed, wherein the annealing temperature is 80-150 ℃ and the annealing time is 5-30 min.
In the invention, the thickness of the long-chain branched alkyl ammonium modified layer is preferably 10nm to 1000nm, more preferably 10nm to 500nm.
In the present invention, the hole transport layer is preferably a Spiro-ome tad, P3HT, PTAA, mnOx, WOx or 2PACz layer, more preferably a Spiro-ome tad layer; the thickness of the hole transport layer is preferably 20nm to 400nm, more preferably 100nm to 200nm. The method for forming the hole transport layer on the modification layer is not particularly limited in the present invention, and a method for preparing a hole transport layer, which is well known to those skilled in the art, may be used.
The type and the formation method of the counter electrode are not particularly limited, and a technical scheme of forming the counter electrode on the hole transport layer, which is well known to those skilled in the art, may be adopted. In a preferred embodiment of the present invention, the hole transport layer is transferred to a thermal evaporation apparatus with a vacuum of up to 1X 10 -5 Under the Pa condition, molybdenum oxide is firstly evaporated, the thickness is 8nm, then an electrode (Ag) is evaporated, and the thickness is 100nm; and obtaining the perovskite solar cell after evaporation is completed.
Compared with the prior art, the invention prepares the modified layer based on the long-chain branched chain alkyl ammonium between the formamidine perovskite active layer and the hole transport layer. The invention has the following beneficial technical effects: in one aspect, the-NH group in a long chain branched alkyl ammonium 2 The device has the lone pair electrons which can coordinate with the lewis acid defects with positive charges through coordination bonds, so that the defects of the formamidine perovskite active layer interface can be passivated, the defect state density is reduced, the non-radiative energy loss is reduced, and the photoelectric conversion efficiency of the device is improved; on the other hand, the long branched alkyl has strong hydrophobicity, long alkyl chains are distributed on the surface of the film to form a hydrophobic passivation layer in the thermal annealing process, and a barrier can be formed at the interface of the formamidine perovskite active layer to resist the erosion of water vapor. And finally, the photoelectric conversion efficiency and stability of the formamidine perovskite solar cell device modified by the long-chain branched chain alkyl ammonium are improved through a simple process.
In addition, the preparation method provided by the invention has the advantages of simple process, mild and easily controlled conditions and wide application prospect.
Example 1
The embodiment provides a formamidine perovskite solar cell modified by long-chain branched chain alkyl ammonium, which comprises a transparent conductive substrate layer 1, an electron transport layer 2, a formamidine perovskite active layer 3, a modification layer 4, a hole transport layer 5 and a metal back electrode 6 which are sequentially arranged as shown in fig. 1. The preparation method comprises the following steps:
step 1: and (3) placing FTO transparent conductive glass (2 cm multiplied by 2 cm) in deionized water, acetone and isopropanol, respectively ultrasonically cleaning for 15min for two times, and drying with nitrogen and then preserving for later use.
Step 2: tin dioxide (SnO) 2 ) The volume ratio of the stock solution to the ultrapure water is 1:5, diluting in proportion, and fully stirring to obtain SnO 2 A precursor solution; placing the FTO substrate in an ultraviolet ozone cleaner for 10min, and placing the substrate on a spin coater; 50 mu L SnO was taken 2 Uniformly spreading the precursor solution on the surface of the FTO conductive glass, starting a spin coater to rotate at a high speed, wherein parameters of the spin coater are set to be 4000rpm, and the time is 30s; then annealing for 30min in an air environment on a hot table at 150 ℃ to obtain SnO 2 Thin film (30 nm); snO prepared as described above 2 The film is placed in an ultraviolet ozone cleaner for treatment for 10min for subsequent spin coating.
Step 3: the substrate was placed on a spin coater in a glove box and 50. Mu.L of PbI was pipetted using a pipette 2 (the solvent is a mixed solvent of DMF and DMSO, the volume ratio of DMF: DMSO=9:1, the concentration is 1.5M, and the solution contains 5mol% RbCl), the solution is uniformly coated on the surface of a substrate, a spin coater is started to rotate at a high speed, parameters of the spin coater are set to be 1500rpm, the time is 30s, the substrate is placed on a heat table in a glove box for annealing after the spin is stopped, the annealing temperature is 70 ℃, and the annealing time is 1min. After the annealing is finished and the substrate is cooled to room temperature, placing the substrate on a spin coater, sucking 50 mu L of FAI precursor solution (the solvent is IPA, the concentration is 90mg/mL, 18mg MACl is additionally dissolved in each 1mL solution) by using a pipetting gun, uniformly coating the solution on the surface of a substrate, starting the spin coater to rotate at a high speed, setting parameters of the spin coater to rotate at 1800rpm for 30s, placing the substrate on a hot table after the spin coater is stopped, annealing in an air environment, wherein the annealing temperature is 150 ℃, the annealing time is 15min, and the air humidity is 30% -40%, and obtaining the formamidine perovskite active layer (400 nm) after the annealing is finished.
Step 4: placing the substrate on a spin coater in a glove box, sucking 50 mu L of the prepared 2-hexyl-1-decylamine precursor solution (the solvent is IPA, the concentration is 1.0 mg/mL), uniformly coating the substrate on the surface of the substrate, starting the spin coater to rotate at a high speed of 5000rpm for 30 seconds, placing the substrate on a hot table in the glove box for annealing after the spin stop, and obtaining the 2-hexyl-1-decylamine modified layer film after the annealing is completed, wherein the annealing temperature is 100 ℃ and the annealing time is 10 minutes.
Step 5: 60. Mu.L of a Spiro-OMeTAD solution (90 mg of Spiro-OMeTAD, 23. Mu.L of LiTFSI solution (520 mg of Li-TFSI solution in 1mL of acetonitrile) and 35. Mu.L of 4-tert-butylpyridine were spin-coated on the prepared perovskite film, the spin coater was started to spin at a high speed, the spin coater parameters were set at 5000rpm for 30 seconds, and the mixture was oxidized in dry air (25 ℃ C., 1% humidity) for 12 hours after the spin coating was completed to obtain a hole transporting layer.
Step 6: finally, evaporating by using a high-vacuum evaporation device, wherein the pressure in an evaporation cabin is 9 multiplied by 10 -5 Pa, molybdenum oxide is firstly evaporated, the thickness is 8nm, then a metal Ag electrode is evaporated, the thickness is 100nm, and the formamidine perovskite solar cell device modified by long-chain branched chain alkyl ammonium is obtained.
Example 2
This example provides a long chain branched alkyl ammonium modified formamidine perovskite solar cell, which differs from example 1 in that in step 4, equal mass of 2-heptyl-undecylamine is used instead of 2-hexyl-1-decylamine.
Example 3
This example provides a long chain branched alkyl ammonium modified formamidine perovskite solar cell, which differs from example 1 in that in step 4, equal mass of 2-octyldodecamine is used instead of 2-hexyl-1-decylamine.
Example 4
This example provides a long chain branched alkyl ammonium modified formamidine perovskite solar cell, which differs from example 1 in that the concentration of 2-hexyl-1-decylamine in step 4 is 0.5 mg/mL.
Example 5
This example provides a long chain branched alkyl ammonium modified formamidine perovskite solar cell, which differs from example 1 in that the concentration of 2-hexyl-1-decylamine in step 4 is 1.5 mg/mL.
Comparative example
This comparative example provides a formamidine perovskite solar cell, which differs from example 1 in that no modification layer is included.
Test case
The formamidine perovskite solar cell provided by the embodiment and the comparative example is subjected to performance test, and the specific test method comprises the following steps:
current density-voltage of formamidine perovskite solar cell prepared by PCE test example and comparative exampleJ- V) The curve, test was completed at the kethley 2400 system test, test conditions: the simulated light intensity is 100mW cm -2 (AM 1.5G) scanning Rate of 0.1V s -1 (step size 0.02V, time delay 200 ms), scan interval 1.2V to-0.2V, power output of xenon lamp calibrated by KG5 standard Si battery of NERL (National Renewable Energy Laboratory) standard.
Stability test the test was performed on unpackaged formamidine perovskite solar cell devices in a room temperature air environment.
The specific test results are shown in the following table:
TABLE 1
As can be seen from the data of fig. 2 to 4 and table 1 of examples and comparative examples, in the present invention, when the formamidine perovskite active layer is prepared, by preparing a long-chain branched alkylammonium thin film between the formamidine perovskite active layer and the hole transport layer as the modification layer (examples 1 to 5), the prepared long-chain branched alkylammonium-modified formamidine perovskite solar cell device has improved open circuit voltage, short circuit current density, fill factor and other photoelectric characteristics compared with the device without the modification layer (comparative example). The formamidine perovskite solar cell device modified by the long-chain branched chain alkyl ammonium prepared by the method has the advantages of high photoelectric conversion efficiency and strong stability.
It is apparent that the above examples are given by way of illustration only and are not limiting of the embodiments. Other variations or modifications of the above teachings will be apparent to those of ordinary skill in the art. It is not necessary here nor is it exhaustive of all embodiments. And obvious variations or modifications thereof are contemplated as falling within the scope of the present invention.
Claims (7)
1. A formamidine perovskite solar cell modified by long-chain branched chain alkyl ammonium is characterized by comprising a transparent conductive basal layer, an electron transport layer, a formamidine perovskite active layer, a modification layer, a hole transport layer and a metal back electrode which are sequentially arranged,
the modification layer material comprises at least one of a 2-hexyl-1-decylamine film, a 2-heptyl undecylamine film and a 2-octyl dodecylamine film.
2. A method for preparing a long chain branched alkyl ammonium modified formamidine perovskite solar cell as claimed in claim 1, comprising the steps of: sequentially preparing an electron transport layer, a formamidine perovskite active layer, a modification layer, a hole transport layer and a metal back electrode on the surface of the transparent conductive substrate layer;
the preparation method of the modification layer comprises the following steps:
and (3) dissolving the material of the modification layer in an organic solvent, spin-coating the material of the modification layer on the surface of the formamidine perovskite active layer, and annealing to obtain the modification layer.
3. The method for preparing a long-chain branched chain alkyl ammonium modified formamidine perovskite solar cell according to claim 2, wherein the organic solvent is at least one of isopropanol, chlorobenzene, ethanol and ethyl acetate.
4. The method for preparing the long-chain branched chain alkyl ammonium modified formamidine perovskite solar cell according to claim 2, wherein the concentration of the modification layer material in an organic solvent is 0.1 mg/mL-2 mg/mL.
5. The method for preparing the long-chain branched chain alkyl ammonium modified formamidine perovskite solar cell according to claim 2, wherein the rotation speed of the spin coating step is 2000-8000 rpm, and the time is 10-60 s.
6. The method for preparing the long-chain branched chain alkyl ammonium modified formamidine perovskite solar cell according to claim 2, wherein the annealing temperature of the annealing step is 80-150 ℃ and the annealing time is 5-30 min.
7. The method for preparing a long-chain branched chain alkyl ammonium modified formamidine perovskite solar cell according to claim 2, wherein the thickness of the modification layer is 10-1000 nm.
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