CN113659014B - Power diode with cathode short-circuit groove grid structure - Google Patents
Power diode with cathode short-circuit groove grid structure Download PDFInfo
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- CN113659014B CN113659014B CN202111220706.5A CN202111220706A CN113659014B CN 113659014 B CN113659014 B CN 113659014B CN 202111220706 A CN202111220706 A CN 202111220706A CN 113659014 B CN113659014 B CN 113659014B
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
Abstract
A power diode with cathode short-circuit groove grid structure, the unit cell structure includes: the drift region is doped with n type, a cathode structure is arranged at the bottom of the drift region doped with n type, an anode structure is arranged at the top of the drift region doped with n type, the anode structure comprises at least one first anode region doped with p type and at least one second anode region doped with p type, the first anode region doped with p type and the second anode region doped with p type are alternately arranged in the horizontal direction, and the cathode structure comprises at least one cathode region doped with n type, at least one cathode region doped with p type and at least one buffer region doped with n type. The power diode provided by the invention can improve the reverse recovery softness so as to eliminate the current and voltage oscillation in the reverse recovery process, can reduce the reverse recovery charge, and has strong practicability.
Description
Technical Field
The invention relates to the technical field of semiconductor devices, in particular to a power diode with a cathode short circuit groove grid structure.
Background
One important application of power diodes is in anti-parallel connection with insulated gate bipolar transistors for freewheeling. In general, it is desirable in free-wheeling applications that the power diode have high reverse recovery softness (less tendency to cause current and voltage oscillations) and low reverse recovery charge: (Reducing reverse recovery peak current, reverse recovery time, and reverse recovery power consumption). Power diodes for freewheeling applications are also referred to as freewheeling diodes. In order to minimize the drift region and reduce the reverse recovery charge under the given voltage endurance requirement, the common Si free-wheeling diode usually adopts a PiN structure of a field-stop type, i.e. the whole drift region is completely depleted under the breakdown voltage. However, such a design may result in reduced reverse recovery softness. This is mainly because, as the reverse bias voltage during the diode reverse recovery increases gradually, the non-equilibrium carriers in the body are rapidly discharged from the body as the depletion region expands; at the moment when the reverse recovery current starts to rise from the maximum negative value to zero, the reverse bias voltage is high and even reaches the maximum applied voltage, only a small amount of non-equilibrium carriers are stored in the body, so that the whole process of the reverse recovery current rising from the maximum negative value to zero or a certain stage in the process becomes very rapid, resulting in a very high reverse recovery current rate (di)rDt). High dirThe/dt causes a significant voltage drop in the parasitic inductance of the loop, which further causes the current and voltage of the freewheeling diode to oscillate (causing emi problems) and even burn out the freewheeling diode. Therefore, improving reverse recovery softness is important to improve stable and reliable operation of the freewheeling diode.
Disclosure of Invention
The invention provides a power diode with a cathode short-circuit groove grid structure, which is used for solving the defects of the prior art, can improve reverse recovery softness so as to eliminate current and voltage oscillation in the reverse recovery process, can reduce reverse recovery charges and has strong practicability.
In order to achieve the purpose of the invention, the following technology is adopted:
a power diode with cathode short-circuit groove grid structure, the unit cell structure includes: an n-type doped drift region, a cathode structure arranged at the bottom of the n-type doped drift region, and an anode structure arranged at the top of the n-type doped drift region,
the anode structure comprises at least one p-type doped first anode region and at least one p-type doped second anode region, and the p-type doped first anode region and the p-type doped second anode region are alternately arranged in the horizontal direction;
the average doping concentration of the p-type doped second anode region is lower than that of the p-type doped first anode region;
an anode conductor covers the p-type doped first anode region;
an anode conductor covers the p-type doped second anode region;
the anode conductor is connected to an anode;
the cathode structure comprises at least one n-type doped cathode region, at least one p-type doped cathode region and at least one n-type doped buffer region;
the n-type doped buffer region is in direct contact with the n-type doped cathode region;
the n-type doped buffer region is also in direct contact with the p-type doped cathode region;
a top plane of the n-type doped buffer region is in direct contact with a bottom plane of the n-type doped drift region;
the n-type doped cathode region is isolated from the p-type doped cathode region by a first cathode short-circuit grooved gate structure.
Further, the integral of the doping concentration of the p-type doped second anode region in the vertical direction is between 1.5 × 1012 cm-2To 6X 1012 cm-2In the meantime.
Further, the p-doped first anode region forms an ohmic contact with an anode conductor.
Further, the p-doped second anode region forms a schottky contact with the anode conductor.
Further, the first cathode short-circuit groove gate comprises a first insulating medium layer and a first conductor area surrounded by the first insulating medium layer;
the first cathode short circuit groove grid structure extends into the n-type doped drift region from the back side of the device upwards;
the top area of the first cathode short circuit groove grid structure is surrounded by an n-type doped cut-off ring;
the side surface of the first cathode short circuit groove gate structure is directly contacted with the n-type doped drift region, the n-type doped buffer region, the n-type doped cathode region and the p-type doped cathode region;
the stop ring is in direct contact with the n-type doped drift region;
the n-type doped cathode region, the p-type doped cathode region, and the first conductor region are covered with a cathode conductor and form ohmic contact with the cathode conductor and are connected to the cathode.
Furthermore, the cell structure also comprises a second cathode short circuit groove grid structure;
the second cathode short-circuit groove gate structure comprises a second insulating medium layer and a second conductor area surrounded by the second insulating medium layer;
the second cathode short circuit groove grid structure extends into the n-type doped drift region from the back side of the device upwards;
the top area of the second cathode short circuit groove grid structure is surrounded by the second n-type doped cut-off ring;
the side face of the second cathode short-circuit groove gate structure is in direct contact with the n-type doped drift region, the n-type doped buffer region and the n-type doped cathode region and is not in direct contact with the p-type doped cathode region;
the second conductor region is covered with a cathode conductor and forms ohmic contact with the cathode conductor and is connected to the cathode.
Furthermore, the cell structure also comprises a third cathode short-circuit groove grid structure;
the third cathode short-circuit groove gate structure comprises a third insulating medium layer and a third conductor area surrounded by the third insulating medium layer;
the third cathode short circuit groove grid structure extends into the n-type doped drift region from the back side of the device upwards;
a top region of the third cathode shorted trench gate structure is surrounded by the third n-doped cutoff ring;
the side face of the third cathode shorted trench gate structure is in direct contact with the n-doped drift region, the n-doped buffer region and the p-doped cathode region but not in direct contact with the n-doped cathode region;
the third conductor region is covered with a cathode conductor and forms ohmic contact with the cathode conductor and is connected to the cathode.
Further, the first conductor region is made of heavily doped n-type polysilicon or metallic aluminum.
Further, the second conductor region is made of heavily doped n-type polysilicon or metallic aluminum.
Further, the third conductor region is made of heavily doped n-type polysilicon or metallic aluminum.
The technical scheme has the advantages that:
the power diode provided by the invention can improve the reverse recovery softness so as to eliminate the current and voltage oscillation in the reverse recovery process, can reduce the reverse recovery charge, and has strong practicability.
Drawings
Fig. 1 shows a schematic structural diagram of a first power diode.
Fig. 2 shows a schematic structural diagram of a second power diode.
Fig. 3 shows a schematic diagram of a third power diode.
Fig. 4 shows a schematic diagram of a fourth power diode.
Fig. 5 shows the breakdown I-V curves of the first power diode and the second power diode.
Fig. 6 shows reverse recovery current waveforms of the first power diode and the second power diode.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings or the orientations or positional relationships that the products of the present invention are conventionally placed in use, and are only used for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention.
The terms "first," "second," and the like are used solely to distinguish one from another and are not to be construed as indicating or implying relative importance.
The terms "parallel", "perpendicular", etc. do not require that the components be absolutely parallel or perpendicular, but may be slightly inclined. For example, "parallel" merely means that the directions are more parallel relative to "perpendicular," and does not mean that the structures are necessarily perfectly parallel, but may be slightly tilted.
Furthermore, the terms "substantially", and the like are intended to indicate that the relative terms are not necessarily strictly required, but may have some deviation. For example: "substantially equal" does not mean absolute equality, but because absolute equality is difficult to achieve in actual production and operation, certain deviations generally exist. Thus, in addition to absolute equality, "substantially equal" also includes the above-described case where there is some deviation. In this case, unless otherwise specified, terms such as "substantially", and the like are used in a similar manner to those described above.
In the description of the present invention, it should also be noted that, unless otherwise explicitly specified or limited, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Example 1
Fig. 1 is a schematic structural diagram of a first power diode. As can be seen from the figure, the first power diode comprises an n-doped drift region 13, a p-doped anode region 14 is arranged on the top of the n-doped drift region 13, and an n-doped cathode region 12 is arranged on the bottom of the n-doped drift region 13, wherein the p-doped anode region 14 is connected to an anode conductor 11, and the n-doped cathode region 12 is connected to a cathode conductor 10.
Which in the blocking state the n-doped drift region 13 is subjected to almost all applied voltage.
In the on state, the p-type doped anode region 14 and the n-type doped cathode region 12 inject holes and electrons into the n-type doped drift region 13, so that the n-type doped drift region 13 generates a conductivity modulation effect, and the n-type doped drift region 13 stores higher-concentration non-equilibrium carriers. During the reverse recovery process (transition from a stable on-state to a stable off-state), the applied voltage is gradually increased, and the non-equilibrium carriers in the n-doped drift region 13 are rapidly extracted from the body as the depletion region expands. When the reverse bias reaches a higher value, the n-doped drift region 13 is almost depleted and only a small number of non-equilibrium carriers are stored in the body. When in useThe reverse bias voltage continues to increase, there are almost no non-equilibrium carriers in the body to provide current continuity, and the reverse recovery current quickly rises back to zero, resulting in a higher dirAnd/dt, thereby causing oscillations in current and voltage. In addition, to ensure good ohmic contact between the anode A and cathode K, the p-type doped anode region 14 and the n-type doped cathode region 12 are typically highly doped, e.g., the doping concentration near the interface with the metal contact may approach or exceed 1X 1017 cm-3。
Example 2
Fig. 2 is a schematic structural diagram of a second power diode. As can be seen from the figure, the cell structure of the second power diode includes: an n-doped drift region 28, a cathode structure at the bottom of the n-doped drift region 28, and an anode structure at the top of the n-doped drift region 28.
Wherein the anode structure comprises three p-type doped first anode regions 290 and three p-type doped second anode regions 29, the p-type doped first anode regions 290 and the p-type doped second anode regions 29 being alternately arranged in the horizontal direction. The average doping concentration of the p-doped second anode region 29 is lower than the average doping concentration of the p-doped first anode region 290. The p-doped first anode region 290 is overlaid with and forms an ohmic contact with the anode conductor 21, the p-doped second anode region 29 is overlaid with and forms a schottky contact with the anode conductor 21, and the anode conductor 21 is connected to the anode a. The integral of the doping concentration of the p-doped second anode region 29 in the vertical direction is between 1.5 x 1012 cm-2To 6X 1012 cm-2In the meantime.
The cathode structure includes two n-type doped cathode regions 22, one p-type doped cathode region 25, and three n-type doped buffer regions 23. The bottom plane of the n-doped buffer region 23 is in direct contact with the top plane of the n-doped cathode region 22. The bottom plane of the n-doped buffer region 23 is in direct contact with the top plane of the p-doped cathode region 25. The top plane of the n-doped buffer region 23 is in direct contact with the bottom plane of the n-doped drift region 28. The n-type doped cathode region 22 is isolated from the p-type doped cathode region 25 by a first cathode shorted trench gate structure.
Wherein the first cathode shorting slot gate includes a first dielectric layer 26 and a first conductor region 24 surrounded by the first dielectric layer 26. The first cathode shorted trench gate structure extends from the back of the device up into the n-doped drift region 28. The top region of the first cathode shorted trench gate structure is surrounded by an n-doped cutoff ring 27. The sides of the first cathode shorted trench gate structure are in direct contact with the n-doped drift region 28, the n-doped buffer region 23, the n-doped cathode region 22, and the p-doped cathode region 25. An n-doped cutoff ring 27 is in direct contact with the n-doped drift region 28. The n-doped cathode region 22, the p-doped cathode region 25 and the first conductor region 24 are covered with the cathode conductor 20 and form an ohmic contact with the cathode conductor 20 and are connected to the cathode K. And the first conductor region 24 therein is made of heavily doped n-type polysilicon or metallic aluminum.
The difference between the second power diode and the first power diode is readily apparent from the above description: (1) a p-type doped cathode region 25 is added; (2) in order to prevent the electric field in the blocking state from passing through to the p-type doped cathode region 25, an n-type doped buffer region 23 is also added; (3) the n-doped cathode region 22 and the p-doped cathode region 25 are separated by a first cathode shorted trench gate structure with an n-doped cutoff ring 27 on top; (4) on the anode a side, there are alternately arranged p-type doped first anode regions 290 and p-type doped second anode regions 29, and the average doping concentration of the p-type doped second anode regions 29 is lower than that of the p-type doped first anode regions 290. the p-type doped second anode regions 29 are in contact with the anode conductor 21 to form a schottky contact.
To ensure ohmic contact, a higher doping concentration is typically used for the n-type doped cathode region 22, the p-type doped cathode region 25, and the p-type doped first anode region 290. The average doping concentration (or doping dose) of the p-doped second anode region 29 is lower than that of the p-doped first anode region 290, so that the p-doped second anode region 29 can function to lower the hole injection efficiency of the anode a and to lower the reverse recovery charge. Of course, of the second anode region 29 doped p-typeThe dopant quantity (i.e. the integral of the doping concentration in the vertical direction) cannot be too low and punch-through breakdown of the p-doped second anode region 29 in the blocking state must be prevented. Using Poisson's equation (critical breakdown field at 2X 10)5V/cm calculation) is calculated, the dopant amount of the p-type doped second anode region 29 must be 1.5 × 10 or more12 cm-2. In order to ensure that the effect of the p-type doped second anode region 29 on reducing the reverse recovery charge is sufficiently significant and to avoid punch-through breakdown, the doping dose of the p-type doped second anode region 29 may be selected to be 1.5 × 1012 cm-2To 6X 1012 cm-2The numerical value in between. Due to the low dopant concentration of the p-doped second anode region 29, the surface doping concentration thereof is approximately 1016 cm-3Magnitude. At this surface doping concentration level, the p-doped second anode region 29 is in contact with the anode conductor 21 to form a schottky contact relatively easily. Of course, ohmic contacts may also be formed at this surface doping concentration level by some process treatments, but this increases process difficulty. Theoretically, the electrical characteristics of the device are hardly affected regardless of whether the contact property of the p-type doped second anode region 29 with the anode conductor 21 is ohmic contact or schottky contact. In addition, the n-type doped buffer region 23 functions to cut off the electric field and prevent the electric field from penetrating to the p-type doped cathode region 25, and the doping amount of the n-type doped buffer region 23 is generally required to be more than 1 × 1012 cm-2. The n-type doped stop ring 27 is used for ensuring that electrons can smoothly flow into the n-type doped cathode region 22 from the n-type doped buffer region 23 on one side of the p-type doped cathode region 25 through the surface of the first cathode short-circuit trench gate structure in a blocking state, so that holes are prevented from being injected into the n-type doped drift region 28 from the p-type doped cathode region 25, and the breakdown voltage is prevented from being reduced. In addition, the first conductor region 24 in the first cathode shorted trench gate structure needs to be made of heavily doped n-type doped polysilicon or a metal conductor (e.g., aluminum) with a lower work function than the n-type doped drift region 28 to ensure that a relatively unobstructed electron leakage path is formed on the surface of the first cathode shorted trench gate structure in the blocking state.
In the blocking state, the diode operates in reverse bias, with a positive voltage applied to the cathode K relative to the anode a. The pn junction formed by the p-doped first anode region 290 and the p-doped second anode region 29 and the n-doped drift region 28 is reverse biased. As the voltage between the cathode K and the anode a increases, the depletion region in the n-doped drift region 28 expands from top to bottom. When the depletion region in the n-doped drift region 28 extends to the n-doped buffer region 23, the n-doped buffer region 23 acts as a cut-off electric field. In the blocking state, the n-doped stop ring 27 also depletes a portion (retains a portion of the neutral region) to act as a stop electric field, while ensuring that the n-doped drift region 28 near the side of the first cathode shorted trench gate structure is not depleted. When the depletion region extends to the n-doped buffer region 23, the potentials of the n-doped drift region 28 and the n-doped stop ring 27 above the n-doped buffer region 23 are slightly lower than the potentials of the n-doped buffer region 23 and the cathode K. At this point, the p-doped first anode region 290 is applied with a small positive voltage relative to the n-doped drift region 28 and the n-doped cutoff ring 27. Thus, a weak electron accumulation layer can be formed at the interface of the n-type doped drift region 28 and the first cathode shorted trench gate structure. When electrons generated in the depletion region flow to the p-type doped cathode region 25, the electrons are collected by the n-type doped buffer region 23 and flow into the n-type doped cathode region 22 through the electron accumulation layer on the surface of the first cathode shorted trench gate structure and the n-type doped stop ring 27. In general, the leakage current of electrons in the blocking state is relatively small, and therefore the voltage drop on the path of electrons flowing from the n-type doped buffer region 23 on the p-type doped cathode region 25 side into the n-type doped cathode region 22 is small, lower than the on-voltage of the pn junction (about 0.7V). Thus, the pnp transistor formed by the p-type doped cathode region 25, the n-type doped buffer region 23, the n-type doped drift region 28, the p-type doped first anode region 290, and the p-type doped second anode region 29 does not function to amplify current in the off state, and thus the p-type doped cathode region 25 does not have the effect of reducing the breakdown voltage. Therefore, the breakdown voltage of the second power diode structure can be very close to the breakdown voltage of the first power diode structure.
In the blocking state, n-type doping is performedThe heteroring stop 27 cannot be completely consumed and therefore its dose usually needs to be greater than 1X 1012 cm-2. If the n-doped stop ring 27 is completely depleted, the n-doped drift region 28 near the side surface of the first cathode shorted trench gate structure is also depleted, the weak electron accumulation layer on the surface of the first cathode shorted trench gate structure disappears, the resistance of the electron leakage path is greatly improved, the pn junction formed by the p-doped cathode region 25 and the n-doped buffer region 23 is turned on, and holes are injected into the n-doped drift region 28 by the p-doped cathode region 25, so that the breakdown voltage is reduced.
It should be further noted that when the first conductor region 24 is made of a conductor material (e.g., heavily doped n-type polysilicon, aluminum) having a lower work function than the n-type doped drift region 28, a weak electron accumulation layer can be formed only when the first cathode is shorted to the surface of the trench gate structure in the blocking state. If the first conductor region 24 is made of heavily doped p-type polysilicon or a metal conductor with a work function higher than that of the n-type doped drift region 28, due to the built-in potential difference, the n-type doped drift region 28 on the side of the first cathode short-circuited trench gate structure is depleted at zero bias, and a weak electron accumulation layer cannot be formed on the side of the first cathode short-circuited trench gate structure in a blocking state.
In the forward conducting state, the diode is operated forward biased and a positive voltage is applied to the anode a relative to the cathode K. The pn junction formed by the p-doped first anode region 290 and the p-doped second anode region 29 and the n-doped drift region 28 is forward biased. The p-doped first anode region 290 injects holes into the n-doped drift region 28 when the positive voltage exceeds the pn junction turn-on voltage (about 0.7V). Further, the holes drift downward and accumulate near the n-doped cathode region 22, and the n-doped cathode region 22 injects electrons into the n-doped drift region 28, and the electrons drift upward and accumulate near the p-doped first anode region 290 and the p-doped second anode region 29, which causes a conductivity modulation effect in the n-doped drift region 28, and the device is turned on. Due to the low dopant level of the p-doped second anode region 29, electrons can more easily enter the p-doped second anode region 29 and be collected by the schottky contact formed by the p-doped second anode region 29 and the anode conductor 21, so that the concentration of non-equilibrium carriers at the anode side is reduced, thereby reducing the reverse recovery charge.
It should be noted that, no matter whether the contact between the p-type doped second anode region 29 and the anode conductor 21 is a schottky contact or an ohmic contact, the concentration of electrons at the contact is very low (negligible), so that the diffusion movement of electrons in the p-type doped second anode region 29 is hardly affected by the properties of the contact, and the device characteristics are hardly affected by the properties of the contact. In addition, when the holes drift to the n-type doped buffer region 23, a part of the holes can be extracted by the p-type doped cathode region 25, which can reduce the accumulation of holes on the cathode side. Of course, this in turn adds a portion of the reverse recovery charge, since the p-doped cathode region 25 in turn injects holes into the n-doped drift region 28 during reverse recovery. However, due to the introduction of the p-doped second anode region 29, the reverse recovery charge of the second power diode will still be less than the reverse recovery charge of the first power diode.
The mechanism of holes in the p-type doped cathode region 25 to the n-type doped drift region 28 during reverse peak recovery is as follows. As the reverse recovery of the diode proceeds, electrons flow from the body into the n-doped cathode region 22, holes flow from the body into the p-doped first anode region 290 and the p-doped second anode region 29, the electron concentration in the region of the n-doped drift region 28 near the top of the n-doped cathode region 22 gradually decreases, and the resistance on the path of electrons flowing from the region of the n-doped drift region 28 near the top of the p-doped cathode region 25 into the n-doped cathode region 22 increases (at this time, the region of the n-doped drift region 28 near the top of the n-doped cathode region 22 is not depleted, and the resistance is not particularly high). When a sufficiently large electron current flows in this path, the potential of the region of the n-doped drift region 28 near the top of the p-doped cathode region 25 is lower than the potential of the n-doped cathode region 22 by 0.7V and more. Electrons from the region of the n-doped drift region 28 near the top of the p-doped cathode region 25 can now be injected into the p-doped cathode region 25 through the n-doped buffer region 23, and the p-doped cathode region 25The cathode region 25 also injects holes into the n-doped drift region 28, and the non-equilibrium carrier concentration on the cathode side is compensated, increasing the current recovery time and decreasing dirAnd/dt. In the process of gradually returning the current from the reverse peak to zero, the electrons flowing into the n-doped cathode region 22 from the region of the n-doped drift region 28 near above the p-doped cathode region 25 gradually decrease, i.e., the electron current gradually decreases. When the reverse recovery current is already low, the potential difference between the p-type doped cathode region 25 and the n-type doped drift region 28 region near above the p-type doped cathode region 25 is less than 0.7V, and the stage of injecting holes into the n-type doped drift region 28 by the p-type doped cathode region 25 ends.
It should be noted that increasing the dopant amount of the p-type doped cathode region 25, the width of the p-type doped cathode region 25, or the number of p-type doped cathode regions 25 can improve the hole injection capability of the p-type doped cathode region 25 into the n-type doped drift region 28, thereby further reducing dirAnd/dt. For example, increasing the width of the p-doped cathode region 25 increases the path for electrons to flow from the region of the n-doped drift region 28 near the top of the p-doped cathode region 25 into the n-doped cathode region 22 during reverse recovery, thereby increasing the resistance on the path, so that the hole injection from the p-doped cathode region 25 into the n-doped drift region 28 ends at a lower negative current, and dirThe/dt can be further reduced.
It should be noted that the mechanism of injecting holes into the n-type doped drift region 28 by the p-type doped cathode region 25 in the reverse recovery process of the second power Diode structure is different from that of a Field Charge Extraction Diode (FCE Diode). The main difference between the anode structure of the second power diode and the anode structure in the field charge extraction diode is the introduction of a first cathode shorted trench gate structure with an n-doped cutoff ring 27 on top, which gives a difference in the path of electrons flowing into the n-doped cathode region 22 from the region of the n-doped drift region 28 near above the p-doped cathode region 25 during reverse recovery. During reverse recovery, electrons from the region of the n-doped drift region 28 above the p-doped cathode region 25 in the second power diode structure do not flow directly through the n-doped buffer region 23 into the n-doped cathode region 22, but rather need to flow into the n-doped cathode region 22 through the region of the n-doped drift region 28 above the n-doped cathode region 22. As electrons are extracted from the body, the electron concentration in the region of the n-doped drift region 28 above and near the n-doped cathode region 22 decreases, the resistance thereof increases significantly, and the p-doped cathode region 25 can automatically inject holes into the n-doped drift region 28. Therefore, the second power diode structure requires only a short p-type doped cathode region 25 to achieve the hole injection function, so that the current can be relatively uniform inside the device. However, the field charge extraction diode requires a long p-type doped cathode region 25 to increase the resistance of the n-type doped buffer region 23, so that the p-type doped cathode region 25 performs the function of injecting holes, and thus the current may not be uniform inside the device.
Example 3
Fig. 3 is a schematic structural diagram of a third power diode. As can be seen from the figure, the third power diode introduces a second cathode shorted trench gate structure in the second power diode, and the second cathode shorted trench gate structure includes a second insulating dielectric layer 36 and a second conductor region 38 surrounded by the second insulating dielectric layer 36, the second cathode shorted trench gate structure extends upward from the back of the device into the n-doped drift region 390, the top region of the second cathode shorted trench gate structure is surrounded by the second n-doped stop ring 393, the side surface of the second cathode shorted trench gate structure is in direct contact with the n-doped drift region 390, the n-doped buffer region 33 and the n-doped cathode region 32 and is not in direct contact with the p-doped cathode region 31, and the second conductor region 38 is covered with a cathode conductor 30, is in ohmic contact with the cathode conductor 30 and is connected to the cathode K.
The second cathode shorted trench gate structure is located in the region where the n-doped cathode region 32 is located, but not in direct contact with the p-doped cathode region 31. The second cathode shorted trench gate structure acts to mitigate the effect of electric field concentration at the n-doped cutoff ring 39 surrounding the top area of the first cathode shorted trench gate structure.
Example 4
Fig. 4 is a schematic structural diagram of a fourth power diode. As can be seen from the figure, the fourth power diode introduces a third cathode short-circuited groove gate structure on the basis of the second power diode. And the third cathode shorted trench gate structure includes a third insulating medium layer 48 and a third conductor region 46 surrounded by a third insulating medium layer 18, the third cathode shorted trench gate structure extends from the back of the device up to the n-doped drift region 492, the top region of the third cathode shorted trench gate structure is surrounded by the third n-doped stop ring 493, and the side of the third cathode shorted trench gate structure is in direct contact with the n-doped drift region 492, the n-doped buffer region 44, and the p-doped cathode region 42 and is not in direct contact with the n-doped cathode region 43. The third conductor region is covered with a cathode conductor 40 and forms an ohmic contact with the cathode conductor 40 and is connected to the cathode K.
The third cathode shorted trench gate structure is located in the region where the p-type doped cathode region 42 is located, but not in direct contact with the n-type doped cathode region 43. The third cathode shorted trench gate structure also serves to mitigate the effect of electric field concentration at the n-doped cutoff ring 49 surrounding the top area of the first cathode shorted trench gate structure. As can also be easily understood from fig. 3 and 4, the second power diode may also include a first cathode shorted trench gate structure, a second cathode shorted trench gate structure, and a third cathode shorted trench gate structure. When the cathode short circuit groove grid structures are uniformly arranged, the electric fields on the corresponding n-type doped stop rings on the cathode short circuit groove grid structures can be uniform as much as possible, and the breakdown voltage is prevented from being remarkably reduced.
In order to illustrate the superiority of the power diode of the present invention, a simulation comparison is performed between the first power diode and the second power diode (in which the labels shown in fig. 2 are used for convenience of description). Half cells (8 μm in width) of the first power diode structure and the second power diode structure were used in the simulation; si material is adopted; minority carrier lifetimes of both electrons and holes are 0.2 mus; the first insulating dielectric layer 26 is made of SiO2With a thickness of 50 nm, the thickness and doping concentration of the n-doped drift region 28 being 105 μm and 6 × 10, respectively13 cm-3(ii) a The thickness and peak doping concentration of the n-doped buffer region 23 are 1.4 μm and 5 × 10, respectively16 cm-3(ii) a The width and the depth of the first cathode short circuit groove gate structure are respectively 1 mu m and 3 mu m, and the first conductor region 24 adopts heavily doped n-type polycrystalline silicon; the peak doping concentration of the n-doped cutoff ring 27 is 5 × 1016cm-3The diffusion length is 0.4 μm; the width, thickness and peak doping concentration of the n-type doped cathode region 22 are 4 μm, 0.6 μm and 3 × 10, respectively18 cm-3(ii) a The width, thickness and peak doping concentration of the p-type doped cathode region 25 are 3 μm, 0.6 μm and 3 × 10, respectively18 cm-3(ii) a The width, thickness and peak doping concentration of the n-doped cathode region 12 in the first power diode were 8 μm, 0.6 μm and 3 × 10, respectively18 cm-3(ii) a The width, thickness and peak doping concentration of the p-doped anode region 14 in the first power diode structure are 8 μm, 2 μm and 3 × 10, respectively18 cm-3(ii) a The width, thickness and peak doping concentration of the p-doped first anode region 290 in the second power diode structure are 4 μm, 2 μm and 3 × 10, respectively18cm-3(ii) a The width, thickness and peak doping concentration of the p-doped second anode region 29 in the second power diode structure are 4 μm, 1 μm and 5.5 × 10, respectively16 cm-3(the dopant amount was 2X 10)12 cm-2) (ii) a The contact formed by the p-doped second anode region 29 and the anode conductor 21 in the second power diode structure is a schottky contact having a barrier height of 0.4 eV.
As shown in fig. 5, the breakdown I-V curves of the first power diode and the second power diode. It can be seen that the breakdown voltage of the second power diode (1616V) is very close to the breakdown voltage of the first power diode (1663V). The breakdown voltage of the second power diode is slightly lower than that of the first power diode, mainly because the n-doped cut-off ring 27 has a certain electric field concentration effect.
As shown in fig. 6, the reverse recovery current waveforms of the first power diode and the second power diode. The waveform of the hole current flowing through the p-doped cathode region 25 in the second power diode structure is also shown, with the active region area of the diode being 0.25 cm2The voltage of the external voltage source is 1000V, and the parasitic inductance connected in series on the anode A is 10 nH. It can be seen from the figure that the reverse recovery charge (i.e. the area enclosed by the segment of the waveform in which the current is negative) of the first power diode is 5.48 μ C, and the reverse recovery charge of the second power diode is 1.85 μ C, which is reduced by 66%. As can be seen from the waveform of the hole current flowing through the p-type doped cathode region 25 in the second power diode, there is a positive hole current stage in the second power diode at the stage of a large reverse recovery current, that is, a stage corresponding to the injection of holes from the p-type doped cathode region 25 into the n-type doped drift region 28. The current of the second power diode rises back to 0 from the reverse recovery peak more slowly than the first power diode due to hole injection with the p-doped cathode region 25. Thus, the second power diode has almost no current oscillation, while the first power diode has a more significant current oscillation.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and it is apparent that those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (8)
1. A power diode with cathode short-circuit groove grid structure, the unit cell structure includes: the drift region of n type doping, the bottom of drift region of n type doping is equipped with the cathode structure, drift region top of n type doping is equipped with anode structure, its characterized in that:
the anode structure comprises at least one p-type doped first anode region and at least one p-type doped second anode region, and the p-type doped first anode region and the p-type doped second anode region are alternately arranged in the horizontal direction;
the average doping concentration of the p-type doped second anode region is lower than that of the p-type doped first anode region;
an anode conductor covers the p-type doped first anode region;
an anode conductor covers the p-type doped second anode region;
the p-type doped first anode region and the anode conductor form ohmic contact;
the p-type doped second anode region forms a Schottky contact with the anode conductor;
the anode conductor is connected to an anode;
the cathode structure comprises at least one n-type doped cathode region, at least one p-type doped cathode region and at least one n-type doped buffer region;
the n-type doped buffer region is in direct contact with the n-type doped cathode region;
the n-type doped buffer region is also in direct contact with the p-type doped cathode region;
a top plane of the n-type doped buffer region is in direct contact with a bottom plane of the n-type doped drift region;
the n-type doped cathode region is mutually isolated from the p-type doped cathode region through a first cathode short-circuit groove gate structure;
the first cathode short-circuit groove gate comprises a first insulating medium layer and a first conductor area surrounded by the first insulating medium layer;
the first cathode short circuit groove grid structure extends into the n-type doped drift region from the back side of the device upwards;
the side surface of the first cathode short circuit groove gate structure is directly contacted with the n-type doped drift region, the n-type doped buffer region, the n-type doped cathode region and the p-type doped cathode region;
the n-type doped cathode region, the p-type doped cathode region, and the first conductor region are covered with a cathode conductor and form ohmic contact with the cathode conductor and are connected to the cathode.
2. The power diode of claim 1, wherein the p-type doped second anode region has a dopant amount of 1.5 x 1012 cm-2To 6X 1012 cm-2In the meantime.
3. The power diode of claim 1, comprising a cathode shorted trench gate structure, wherein:
the top area of the first cathode short circuit groove grid structure is surrounded by an n-type doped cut-off ring;
the n-doped cutoff ring is in direct contact with the n-doped drift region.
4. The power diode of claim 1, comprising a cathode shorted trench gate structure, wherein:
the cell structure also comprises a second cathode short circuit groove grid structure;
the second cathode short-circuit groove gate structure comprises a second insulating medium layer and a second conductor area surrounded by the second insulating medium layer;
the second cathode short circuit groove grid structure extends into the n-type doped drift region from the back side of the device upwards;
the top area of the second cathode short circuit groove grid structure is surrounded by a second n-type doped cut-off ring;
the side face of the second cathode short-circuit groove gate structure is in direct contact with the n-type doped drift region, the n-type doped buffer region and the n-type doped cathode region and is not in direct contact with the p-type doped cathode region;
the second conductor region is covered with a cathode conductor and forms ohmic contact with the cathode conductor and is connected to the cathode.
5. The power diode of claim 1, further comprising a third cathode shorted trench gate structure in the cell structure;
the third cathode short-circuit groove gate structure comprises a third insulating medium layer and a third conductor area surrounded by the third insulating medium layer;
the third cathode short circuit groove grid structure extends into the n-type doped drift region from the back side of the device upwards;
the top area of the third cathode short circuit groove grid structure is surrounded by a third n-type doped cut-off ring;
the side face of the third cathode shorted trench gate structure is in direct contact with the n-doped drift region, the n-doped buffer region and the p-doped cathode region but not in direct contact with the n-doped cathode region;
the third conductor region is covered with a cathode conductor and forms ohmic contact with the cathode conductor and is connected to the cathode.
6. The power diode of claim 1, wherein the first conductor region is made of heavily doped n-type polysilicon or aluminum metal.
7. The power diode of claim 4, wherein the second conductor region is made of heavily doped n-type polysilicon or aluminum metal.
8. The power diode with cathode shorted trench gate structure of claim 5, wherein the third conductor region is made of heavily doped n-type polysilicon or aluminum metal.
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Citations (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1909332A1 (en) * | 2006-10-05 | 2008-04-09 | ABB Technology AG | Power Semiconductor device |
| CN102683428A (en) * | 2005-12-27 | 2012-09-19 | 美商科斯德半导体股份有限公司 | Ultrafast recovery diode |
| CN103441148A (en) * | 2013-08-13 | 2013-12-11 | 电子科技大学 | Groove gate VDMOS device integrated with Schottky diode |
| JP2014157930A (en) * | 2013-02-15 | 2014-08-28 | Toyota Central R&D Labs Inc | Diode and semiconductor device incorporating diode |
| CN104124151A (en) * | 2014-07-14 | 2014-10-29 | 中航（重庆）微电子有限公司 | Groove structure Schottky barrier diode and production method thereof |
| CN104538374A (en) * | 2015-01-08 | 2015-04-22 | 电子科技大学 | Chip scale package PIN diode and manufacturing method thereof |
| US9455249B2 (en) * | 2014-08-13 | 2016-09-27 | Alpha And Omega Semiconductor Incorporated | Planar srfet using no additional masks and layout method |
| CN106653836A (en) * | 2016-12-01 | 2017-05-10 | 无锡新洁能股份有限公司 | Insulated gate bipolar transistor device with low conduction voltage drop, and manufacturing method for insulated gate bipolar transistor device |
| CN107534042A (en) * | 2015-06-17 | 2018-01-02 | 富士电机株式会社 | Semiconductor device |
| WO2018110703A1 (en) * | 2016-12-16 | 2018-06-21 | 富士電機株式会社 | Semiconductor device and production method |
| CN109449205A (en) * | 2018-10-31 | 2019-03-08 | 深圳市鹏朗贸易有限责任公司 | A kind of static induction thyristor and its manufacturing method |
| CN109755311A (en) * | 2017-11-01 | 2019-05-14 | 苏州东微半导体有限公司 | A kind of groove type power transistor |
| CN110783399A (en) * | 2019-11-22 | 2020-02-11 | 江苏东晨电子科技有限公司 | Miniature ultra-low capacitance solid discharge tube and preparation method thereof |
| CN110838516A (en) * | 2018-08-17 | 2020-02-25 | 实用半导体有限公司 | Semiconductor element, semiconductor substrate and semiconductor element manufacturing method |
| US10622350B2 (en) * | 2018-02-14 | 2020-04-14 | Fuji Electric Co., Ltd. | Semiconductor device |
| CN111799334A (en) * | 2020-07-31 | 2020-10-20 | 四川大学 | Super junction MOSFET (metal-oxide-semiconductor field effect transistor) with reverse conductive groove gate structure |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014063980A (en) * | 2012-08-30 | 2014-04-10 | Toshiba Corp | Semiconductor device |
| DE112017000064T5 (en) * | 2016-02-23 | 2018-03-29 | Fuji Electric Co., Ltd. | SEMICONDUCTOR DEVICE |
| CN105679819B (en) * | 2016-03-18 | 2018-12-11 | 电子科技大学 | A kind of inverse conductivity type mos gate control thyristor and preparation method thereof |
| JP6723784B2 (en) * | 2016-03-28 | 2020-07-15 | ローム株式会社 | diode |
| CN108321195B (en) * | 2018-02-05 | 2020-05-22 | 电子科技大学 | Short-circuit anode SOI LIGBT with anode clamping and breaking groove |
| CN109192787B (en) * | 2018-07-19 | 2021-07-13 | 东南大学 | Groove-type anode FRD with two-pole Schottky control and manufacturing method |
| CN110416319B (en) * | 2019-08-21 | 2023-05-05 | 江苏中科君芯科技有限公司 | Double-sided Schottky-controlled fast recovery diode device and preparation method thereof |
-
2021
- 2021-10-20 CN CN202111220706.5A patent/CN113659014B/en active Active
Patent Citations (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102683428A (en) * | 2005-12-27 | 2012-09-19 | 美商科斯德半导体股份有限公司 | Ultrafast recovery diode |
| EP1909332A1 (en) * | 2006-10-05 | 2008-04-09 | ABB Technology AG | Power Semiconductor device |
| JP2014157930A (en) * | 2013-02-15 | 2014-08-28 | Toyota Central R&D Labs Inc | Diode and semiconductor device incorporating diode |
| CN103441148A (en) * | 2013-08-13 | 2013-12-11 | 电子科技大学 | Groove gate VDMOS device integrated with Schottky diode |
| CN104124151A (en) * | 2014-07-14 | 2014-10-29 | 中航（重庆）微电子有限公司 | Groove structure Schottky barrier diode and production method thereof |
| US9455249B2 (en) * | 2014-08-13 | 2016-09-27 | Alpha And Omega Semiconductor Incorporated | Planar srfet using no additional masks and layout method |
| CN104538374A (en) * | 2015-01-08 | 2015-04-22 | 电子科技大学 | Chip scale package PIN diode and manufacturing method thereof |
| CN107534042A (en) * | 2015-06-17 | 2018-01-02 | 富士电机株式会社 | Semiconductor device |
| CN106653836A (en) * | 2016-12-01 | 2017-05-10 | 无锡新洁能股份有限公司 | Insulated gate bipolar transistor device with low conduction voltage drop, and manufacturing method for insulated gate bipolar transistor device |
| WO2018110703A1 (en) * | 2016-12-16 | 2018-06-21 | 富士電機株式会社 | Semiconductor device and production method |
| CN109755311A (en) * | 2017-11-01 | 2019-05-14 | 苏州东微半导体有限公司 | A kind of groove type power transistor |
| US10622350B2 (en) * | 2018-02-14 | 2020-04-14 | Fuji Electric Co., Ltd. | Semiconductor device |
| CN110838516A (en) * | 2018-08-17 | 2020-02-25 | 实用半导体有限公司 | Semiconductor element, semiconductor substrate and semiconductor element manufacturing method |
| CN109449205A (en) * | 2018-10-31 | 2019-03-08 | 深圳市鹏朗贸易有限责任公司 | A kind of static induction thyristor and its manufacturing method |
| CN110783399A (en) * | 2019-11-22 | 2020-02-11 | 江苏东晨电子科技有限公司 | Miniature ultra-low capacitance solid discharge tube and preparation method thereof |
| CN111799334A (en) * | 2020-07-31 | 2020-10-20 | 四川大学 | Super junction MOSFET (metal-oxide-semiconductor field effect transistor) with reverse conductive groove gate structure |
Non-Patent Citations (1)
| Title |
|---|
| Snapback-free reverse conducting IGBT with p-float and n-ring surrounding trench-collector;Li, Jie；Huang, Mingmin；Chen, Chang；and et al.;《ELECTRONICS LETTERS》;20201126;1337-1340 * |
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