CN113658855A - Etching method of side wall metal and application thereof - Google Patents
Etching method of side wall metal and application thereof Download PDFInfo
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- CN113658855A CN113658855A CN202010395390.2A CN202010395390A CN113658855A CN 113658855 A CN113658855 A CN 113658855A CN 202010395390 A CN202010395390 A CN 202010395390A CN 113658855 A CN113658855 A CN 113658855A
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- etching
- sample
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- side wall
- ion beam
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- 238000005530 etching Methods 0.000 title claims abstract description 100
- 238000000034 method Methods 0.000 title claims abstract description 44
- 239000002184 metal Substances 0.000 title claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 19
- 239000007789 gas Substances 0.000 claims abstract description 19
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 18
- 239000011261 inert gas Substances 0.000 claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 claims abstract description 8
- 238000007747 plating Methods 0.000 claims abstract description 6
- 238000011112 process operation Methods 0.000 claims abstract description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052743 krypton Inorganic materials 0.000 claims description 3
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052754 neon Inorganic materials 0.000 claims description 3
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 3
- 229910052704 radon Inorganic materials 0.000 claims description 3
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052724 xenon Inorganic materials 0.000 claims description 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 21
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 11
- 238000002360 preparation method Methods 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/2633—Bombardment with radiation with high-energy radiation for etching, e.g. sputteretching
Abstract
An etching method of side wall metal and application thereof belong to the technical field of semiconductor process. The method comprises the following steps: plating a Pd film on the surface of a step sample to be etched, wherein the thickness of the plated film is 45-55 nm; etching a sample by using an ion beam etching machine, wherein in the etching process, the inclination angle of a sample platform of the ion beam etching machine is 45-85 degrees, the bombardment energy is 180-210 eV, the etching time is 17-25 min, the etching gas is inert gas, the flow of the etching gas is 15-40 sccm, and the etching is finished until all materials to be etched on the side wall are etched; and taking out the etched sample, and carrying out subsequent process operation. The method adopts pure physical etching, does not introduce other reaction elements, can effectively improve the etching selection ratio between the material on the side wall of the step and the material at the bottom, has simple manufacturing method, and can effectively improve the production efficiency.
Description
Technical Field
The invention belongs to the technical field of semiconductor processes, and particularly relates to a side wall metal etching method and application thereof.
Background
Etching is a processing technology for selectively removing partial film or substrate material, only a film is usually etched in IC (integrated circuit) manufacturing, a substrate does not need to be etched, and a monocrystalline silicon substrate is also required to be etched besides the film in MEMS (micro electro mechanical system) manufacturing.
With the development of micro-nano processing technology, methods of etching processes are more and more diversified, and the requirements for etching are more and more special, for example, after a metal film is physically vapor-deposited on the surface of a graphical sample (left model) shown in fig. 1, the metal material on the side wall of a step is required to be completely removed (changed into a right model). For the above requirements, a method using etching is generally selected to solve the above requirements. The etching can be divided into wet etching and dry etching, the wet etching is etching by using a chemical reaction between a solution and an etched material, a specified chemical reagent is generally selected to etch a target material, when the etching solution can affect other materials on a sample, only a dry etching method can be selected, and the dry etching is mainly etching by using a reaction gas or plasma.
Dry etching is mainly classified into reactive ion etching and physical etching. Reactive ion etching, which mainly uses plasma of reaction gas to etch materials, and the method mainly has the characteristic of anisotropy and has deviation of etching effect on side walls. However, the reactive ion etching also has the characteristic of isotropic etching, and requires a better reaction activity between the reaction gas and the material to be etched, so that when the etching material and the etching gas are not easy to react, the difficulty in etching the sidewall metal is greater. Such as metallic palladium (Pd), chlorine-based gas, fluorine-based gas are not easily reacted therewith. The difficulty of etching is greater for such materials on the sidewalls.
Disclosure of Invention
The technical problem to be solved is as follows: aiming at the technical problems, the invention provides the etching method of the side wall metal and the application thereof, and the method has the advantages of simple preparation method, no introduction of other reaction elements, high etching selectivity of the step side wall, high production efficiency and the like.
The technical scheme is as follows: a method of etching sidewall metal, the method comprising the steps of:
plating a Pd film on the surface of a step sample to be etched, wherein the thickness of the plated film is 45-55 nm;
etching the sample by using an ion beam etching machine, wherein in the etching process, the inclination angle of a sample table of the ion beam etching machine is 45-85 degrees, the bombardment energy is 180-210 eV, the etching time is 17-25 min, the etching gas is inert gas, the flow of the etching gas is 15-40 sccm, and the photoetching is finished until all materials to be etched on the side wall are subjected to photoetching;
and step three, taking out the etched sample, and performing subsequent process operation.
Preferably, the inert gas in the second step is at least one of helium, neon, argon, krypton, xenon and radon.
Preferably, in the first step, a Pd film is plated on the surface of the step sample to be etched, and the thickness of the plated film is 50 nm.
Preferably, in the second step, the sample is etched by using an ion beam etching machine, in the etching process, the inclination angle of the sample stage of the ion beam etching machine is 75 degrees, the inclination angle can effectively improve the etching selection ratio between the side wall material and the bottom (or top) material, the bombardment energy is 200 eV, the etching time is 20 min, the etching gas is inert gas, and the etching gas flow is 24 sccm.
Preferably, the ion beam etcher is an 8-inch luwenn instrument LMEC 200-I BE.
The invention also discloses an application of the etching method of the side wall metal in the preparation of integrated circuits and micromotor systems.
Has the advantages that: 1. the method adopts pure physical etching, and other reaction elements are not introduced;
2. the method can effectively improve the etching selection ratio between the material on the side wall of the step and the material at the bottom, has simple manufacturing method, and can effectively improve the production efficiency.
Drawings
FIG. 1 is a schematic structural view of a material of front and rear etched sidewalls in example 1;
FIG. 2 is an SEM photograph of a Pd film plated on the step before etching in example 1;
FIG. 3 is an SEM image of a sample after etching in example 1.
Detailed Description
The invention is further described below with reference to the accompanying drawings and specific embodiments.
Example 1
A method of etching sidewall metal, the method comprising the steps of:
plating a Pd film on the surface of a step sample to be etched, wherein the thickness of the plated film is 50 nm;
etching a sample by using an ion beam etching machine (a Lu instrument LMEC 200-I BE, 8 inches), wherein in the etching process, the inclination angle of a sample platform of the ion beam etching machine is 75 degrees, the inclination angle can effectively improve the etching selection ratio between a side wall material and a bottom (or top) material, the bombardment energy is 200 eV, the etching time is 20 min, the etching gas is inert gas, the etching gas flow is 24 sccm, and the inert gas is at least one of helium, neon, argon, krypton, xenon and radon until the materials to BE etched on the side wall are completely etched and photoetched;
and step three, taking out the etched sample, and performing subsequent process operation.
The etching method of the side wall metal is applied to the preparation of integrated circuits and micromotor systems.
The schematic structure of the sample before and after etching is shown in FIG. 1, the SEM image of the sample with the Pd film plated on the step is shown in FIG. 2, the SEM image of the sample after etching is shown in FIG. 3, and as can be seen from FIG. 2 and FIG. 3, the Pd film on the side wall of the sample after etching by the method of the present invention is etched, and Pd on the bottom and the top is still more remained.
Example 2
A method of etching sidewall metal, the method comprising the steps of:
plating a Pd film on the surface of a step sample to be etched, wherein the thickness of the plated film is 45 nm;
etching the sample by using an ion beam etching machine (a Venturi instrument LMEC 200-I BE, 8 inches), wherein in the etching process, the inclination angle of a sample table of the ion beam etching machine is 45 degrees, the bombardment energy is 180 eV, the etching time is 17 min, the etching gas is inert gas, the flow of the etching gas is 15 sccm, and the photoetching is finished until all materials to BE etched on the side wall are etched;
and step three, taking out the etched sample, and performing subsequent process operation.
The etching method of the side wall metal is applied to the preparation of integrated circuits and micromotor systems.
Example 3
A method of etching sidewall metal, the method comprising the steps of:
plating a Pd film on the surface of a step sample to be etched, wherein the thickness of the plated film is 55 nm;
etching the sample by using an ion beam etching machine (a Venturi instrument LMEC 200-I BE, 8 inches), wherein in the etching process, the inclination angle of a sample table of the ion beam etching machine is 85 degrees, the bombardment energy is 210 eV, the etching time is 25 min, the etching gas is inert gas, the flow rate of the etching gas is 40 sccm, and the photoetching is finished until all materials to BE etched on the side wall are etched;
and step three, taking out the etched sample, and performing subsequent process operation.
The etching method of the side wall metal is applied to the preparation of integrated circuits and micromotor systems.
Claims (6)
1. A method for etching side wall metal is characterized by comprising the following steps:
plating a Pd film on the surface of a step sample to be etched, wherein the thickness of the plated film is 45-55 nm;
etching the sample by using an ion beam etching machine, wherein in the etching process, the inclination angle of a sample table of the ion beam etching machine is 45-85 degrees, the bombardment energy is 180-210 eV, the etching time is 17-25 min, the etching gas is inert gas, and the flow of the etching gas is 15-40 sccm;
and step three, taking out the etched sample, and performing subsequent process operation.
2. The method of claim 1, wherein the inert gas in the second step is at least one of helium, neon, argon, krypton, xenon, and radon.
3. The method for etching a sidewall metal of claim 1, wherein in the first step, a Pd film is plated on the surface of the step sample to be etched, and the thickness of the plated film is 50 nm.
4. The method for etching the metal on the side wall according to claim 1, wherein in the second step, the ion beam etching machine is used for etching the sample, during the etching process, the inclination angle of the sample stage of the ion beam etching machine is 75 degrees, the bombardment energy is 200 eV, the etching time is 20 min, the etching gas is inert gas, and the etching gas flow is 24 sccm.
5. The method according to claim 1, wherein the ion beam etcher is an 8-inch venturi instrument LMEC 200-I BE.
6. Use of a method of etching a sidewall metal according to claim 1 in the fabrication of integrated circuits and microelectromechanical systems.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010395390.2A CN113658855A (en) | 2020-05-12 | 2020-05-12 | Etching method of side wall metal and application thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010395390.2A CN113658855A (en) | 2020-05-12 | 2020-05-12 | Etching method of side wall metal and application thereof |
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| Publication Number | Publication Date |
|---|---|
| CN113658855A true CN113658855A (en) | 2021-11-16 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010395390.2A Pending CN113658855A (en) | 2020-05-12 | 2020-05-12 | Etching method of side wall metal and application thereof |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3943047A (en) * | 1974-05-10 | 1976-03-09 | Bell Telephone Laboratories, Incorporated | Selective removal of material by sputter etching |
| JPH0358413A (en) * | 1989-07-26 | 1991-03-13 | Nec Corp | Manufacture of semiconductor device |
| CN1601722A (en) * | 2003-09-23 | 2005-03-30 | 茂德科技股份有限公司 | Mfg method of contact hole and mfg method of semiconductor element |
| CN102683210A (en) * | 2011-03-18 | 2012-09-19 | 中国科学院微电子研究所 | Semiconductor structure and manufacturing method thereof |
| CN103495907A (en) * | 2013-09-24 | 2014-01-08 | 中国科学院高能物理研究所 | Method for polishing side wall of microstructure through ion beam etching technique |
| CN105609415A (en) * | 2015-12-25 | 2016-05-25 | 中国科学院微电子研究所 | Etching method |
| CN109065480A (en) * | 2018-08-03 | 2018-12-21 | 江苏鲁汶仪器有限公司 | A kind of magnetic tunnel-junction lithographic method |
-
2020
- 2020-05-12 CN CN202010395390.2A patent/CN113658855A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3943047A (en) * | 1974-05-10 | 1976-03-09 | Bell Telephone Laboratories, Incorporated | Selective removal of material by sputter etching |
| JPH0358413A (en) * | 1989-07-26 | 1991-03-13 | Nec Corp | Manufacture of semiconductor device |
| CN1601722A (en) * | 2003-09-23 | 2005-03-30 | 茂德科技股份有限公司 | Mfg method of contact hole and mfg method of semiconductor element |
| CN102683210A (en) * | 2011-03-18 | 2012-09-19 | 中国科学院微电子研究所 | Semiconductor structure and manufacturing method thereof |
| CN103495907A (en) * | 2013-09-24 | 2014-01-08 | 中国科学院高能物理研究所 | Method for polishing side wall of microstructure through ion beam etching technique |
| CN105609415A (en) * | 2015-12-25 | 2016-05-25 | 中国科学院微电子研究所 | Etching method |
| CN109065480A (en) * | 2018-08-03 | 2018-12-21 | 江苏鲁汶仪器有限公司 | A kind of magnetic tunnel-junction lithographic method |
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