CN113652673B - Chemical vapor deposition platen structure and control method thereof - Google Patents
Chemical vapor deposition platen structure and control method thereof Download PDFInfo
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- CN113652673B CN113652673B CN202111082244.5A CN202111082244A CN113652673B CN 113652673 B CN113652673 B CN 113652673B CN 202111082244 A CN202111082244 A CN 202111082244A CN 113652673 B CN113652673 B CN 113652673B
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- 238000000034 method Methods 0.000 title claims abstract description 23
- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 17
- 239000000919 ceramic Substances 0.000 claims abstract description 74
- 230000003647 oxidation Effects 0.000 claims abstract description 26
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 26
- 239000011521 glass Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000009792 diffusion process Methods 0.000 claims abstract description 16
- 239000011859 microparticle Substances 0.000 claims description 20
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 239000003792 electrolyte Substances 0.000 claims description 6
- 238000003466 welding Methods 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 239000011195 cermet Substances 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 230000002159 abnormal effect Effects 0.000 abstract description 6
- 238000005299 abrasion Methods 0.000 abstract description 3
- 230000015556 catabolic process Effects 0.000 abstract description 3
- 230000007547 defect Effects 0.000 abstract description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 239000010408 film Substances 0.000 description 7
- 101100190527 Arabidopsis thaliana PIN5 gene Proteins 0.000 description 6
- 101100190530 Arabidopsis thaliana PIN8 gene Proteins 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000003749 cleanliness Effects 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000000740 bleeding effect Effects 0.000 description 3
- 210000005056 cell body Anatomy 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 239000012265 solid product Substances 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 239000010407 anodic oxide Substances 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Electrochemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses a chemical vapor deposition platen structure and a control method thereof, wherein the chemical vapor deposition platen structure comprises a cavity, an anode platen, a glass substrate, an air hole diffusion plate, PIN (personal identification number) holes and a ceramic sleeve, wherein the anode platen is arranged in the cavity, the glass substrate is movably arranged on the upper wall of the anode platen, the PIN holes are penetrated and arranged on the anode platen, and the ceramic sleeve is fixedly arranged in the PIN holes; the invention relates to a chemical vapor deposition platen structure and a control method thereof, which are used for improving the abrasion defect of platen PIN and platen anodic oxidation film, eliminating the abnormal discharge of anode platen and cathode air hole diffusion plate and improving the problem of TFT device capacitance breakdown.
Description
Technical Field
The invention belongs to the technical field of manufacturing of display panels, and particularly relates to a chemical vapor deposition platen structure and a control method thereof.
Background
In the semiconductor industry, PECVD (Plasma Enhanced Chemical Vapor Deposition) refers to plasma enhanced chemical vapor deposition, and the PECVD reaction process is: introducing the reaction gas into a reactor, ionizing the reaction gas under the action of microwave or RF radio frequency to produce plasma with extremely strong activity, ions or ion groups, and chemically reacting the plasma on the surface of a solid substrate in a diffusion mode to generate solid products and uniformly depositing the solid products on the surface of the substrate;
the display panel industry adopts a PECVD machine to prepare SiNx, siO2 and SiNC in a TFT device, which respectively play roles in isolation, insulation and buffering in the display device, wherein the PECVD machine comprises a conveying cavity and a process cavity, in the conveying process of glass, a manipulator supports the glass to be conveyed into the process cavity through the conveying cavity, then a PIN in a platen lifts up the glass, the manipulator retracts, finally the PIN in the platen drops, and the glass steadily drops on the platen;
in the PECVD process, as PIN is lifted back and forth in the holes of the platen, when glass scraps and microparticles fall into the holes, PIN brings scraps to rub the anodic oxidation film on the surface of the platen back and forth, so that the anodic oxidation film at the holes is damaged, in the process of preparation, the platen and the upper cathode pore diffusion plate which are damaged by anodic oxidation form a capacitor, when the voltage is in a certain time, an electric arc is generated, the TFT device is damaged by static electricity, a buffer layer and an isolation layer SiNx/SiO2 in the middle of a metal grid electrode and a metal source drain electrode are broken down, the grid electrode and the source drain electrode are directly conducted, and the device is disabled.
Disclosure of Invention
In order to solve the problems, the invention provides a chemical vapor deposition platen structure and a control method thereof, which improve the abrasion defect of a platen PIN and a platen anodic oxide film, eliminate abnormal discharge of an anode platen and a cathode pore diffusion plate and improve the problem of capacitance breakdown of a TFT device.
In order to realize the functions, the technical scheme adopted by the invention is as follows: the utility model provides a chemical vapor deposition platen structure, includes cavity, positive pole platen, glass substrate, gas pocket diffuser plate, PIN hole and ceramic sleeve, the positive pole platen is located in the cavity, the glass substrate activity is located on the positive pole platen upper wall, the PIN hole runs through and locates on the positive pole platen, the ceramic sleeve rigid coupling is located in the PIN hole, ceramic sleeve inner wall surface is smooth, ceramic sleeve and PIN hole welding together, then carry out anodic oxidation, place the positive pole platen of aluminium material in acid electrolyte, simultaneously lead electric current, prepare the aluminium oxide of one deck compact insulation at the surface of positive pole platen, realize insulating effect, and when positive pole platen anodic oxidation, ceramic sleeve and PIN hole junction has also obtained anodic oxidation; the air hole diffusion plate is arranged in the cavity and is arranged at the upper end of the glass substrate; when PIN goes up and down in ceramic sleeve inside and accepts glass substrate, PIN can not rub the anodic oxidation on positive pole platen surface to when having the microparticle to drop in ceramic sleeve inside, because ceramic sleeve is hollow structural design, sleeve internal roughness is very little, and the surface is smooth, and the microparticle falls into the back, directly slides to the bottom of cavity, is taken out by the pipeline 7 of bleeding, can not pollute the inside film structure of cavity, and this structure has avoided the destruction of metal platen surface anodic oxidation layer, has reduced the possibility of abnormal discharge, and has reduced the gathering of microparticle, has improved the cleanliness factor of cavity.
Preferably, the upper wall of the cavity is provided with a gas inlet pipeline.
Further, the bottom wall of the cavity is provided with an air exhaust pipeline.
The ceramic sleeve is arranged in a cylindrical hollow cavity which is vertically penetrated, the radius of the ceramic sleeve is 5 mm-10 mm, and the height of the ceramic sleeve is 5 cm-8 cm.
Preferably, the ceramic sleeve has a radius of 8mm.
Preferably, the ceramic sleeve has a height of 6cm.
Preferably, the ceramic sleeve material is a Ti (C, N) -based cermet; the Ti (C, N) -based metal ceramic has high hardness which can generally reach HRA 91-93.5, strong wear resistance and wear resistance, high heat resistance and chemical stability, can normally work at 1100-1300 ℃, and cannot be corroded along with PECVD high-temperature process and chemical components.
The invention also comprises a control method of the chemical vapor deposition platen structure, which comprises the following steps:
1) After the ceramic sleeve is arranged in the PIN hole, the ceramic sleeve and the PIN hole are welded together, and the ceramic sleeve is arranged in the anode platen;
2) Anodic oxidation, namely placing an anode platen made of aluminum into acid electrolyte, simultaneously applying current, preparing a layer of compact insulating aluminum oxide on the surface of the anode platen, and anodic oxidation is also carried out on the welding part of the ceramic sleeve and the PIN hole while the anode platen is anodic oxidized;
3) The PIN is lifted up and down in the ceramic sleeve to push the glass substrate to move, the PIN cannot rub against the anodic oxidation of the surface of the anode platen, and when micro particles fall into the ceramic sleeve, the micro particles slide down to the bottom of the cavity along the inner wall of the ceramic sleeve;
4) The air exhaust pipeline is used for exhausting the microparticles, so that the thin film structure inside the cavity is prevented from being polluted.
The invention adopts the structure to obtain the beneficial effects as follows: the chemical vapor deposition platen structure and the control method thereof provided by the invention are simple in operation, compact in structure and reasonable in design, can not only solve the abrasion defect of the platen PIN and the platen anodic oxidation film, eliminate abnormal discharge of the anode platen and the cathode pore diffusion plate, improve the problem of capacitance breakdown of a TFT device, but also reduce aggregation of microparticles and improve the cleanliness of a cavity.
Drawings
FIG. 1 is a block diagram of a chemical vapor deposition platen structure provided by the present invention;
FIG. 2 is a top view of an anode platen of the chemical vapor deposition platen structure provided by the present invention;
fig. 3 is a diagram showing the connection between a ceramic sleeve and a PIN of a platen structure for chemical vapor deposition according to the present invention.
The solar cell comprises a cell body, an anode platen, a glass substrate, an air hole diffusion plate, a PIN, a gas inlet pipeline, an air exhaust pipeline, a PIN hole, a ceramic sleeve and a ceramic sleeve, wherein the cell body is 1, the cell body is 2, the anode platen is 3, the glass substrate is 4, the air hole diffusion plate is 5, the PIN is 6, the gas inlet pipeline is 7, the air exhaust pipeline is 8, the PIN hole is 9, and the ceramic sleeve is arranged.
Detailed Description
The following description of the embodiments of the present invention will be made apparent and fully in view of the accompanying drawings, in which some, but not all embodiments of the invention are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. The present invention will be described in further detail with reference to the accompanying drawings.
As shown in fig. 1, 2 and 3, the chemical vapor deposition platen structure provided by the invention comprises a cavity 1, an anode platen 2, a glass substrate 3, an air hole diffusion plate 4, PIN5, PIN holes 8 and a ceramic sleeve 9, wherein the anode platen 2 is arranged in the cavity 1, the glass substrate 3 is movably arranged on the upper wall of the anode platen 2, the PIN holes 8 are penetrated on the anode platen 2, the ceramic sleeve 9 is fixedly arranged in the PIN holes 8, the inner wall surface of the ceramic sleeve 9 is smooth, the ceramic sleeve 9 and the PIN holes 8 are welded together, then anodic oxidation is carried out, the anode platen 2 made of aluminum material is placed in an acidic electrolyte, meanwhile, current is conducted, a layer of compact insulating aluminum oxide is prepared on the surface of the anode platen 2, the insulation effect is realized, meanwhile, the anodic oxidation is also obtained at the welding position of the ceramic sleeve 9 and the PIN holes 8, the upper wall of the cavity 1 is provided with a gas inlet pipeline 6, and the bottom wall of the cavity 1 is provided with a gas exhaust pipeline 7; the air hole diffusion plate 4 is arranged in the cavity 1, and the air hole diffusion plate 4 is arranged at the upper end of the glass substrate 3; when PIN5 goes up and down in ceramic sleeve 9 and accepts glass substrate 3, PIN5 can not rub the anodic oxidation on anode platen 2 surface to when having the microparticle to drop in ceramic sleeve 9 inside, because ceramic sleeve 9 is hollow structural design, sleeve internal roughness is very little, and the surface is smooth, and the microparticle drops in the back, directly slides to the bottom of cavity 1, is taken out by the pipeline 77 of bleeding, can not pollute the inside film structure of cavity 1, and this structure has avoided the destruction of metal platen surface anodic oxidation layer, has reduced the possibility of abnormal discharge, and reduced microparticle's gathering has improved the cleanliness factor of cavity.
As shown in fig. 3, the ceramic sleeve 9 is a cylindrical hollow cavity 1 penetrating up and down, the radius of the ceramic sleeve 9 is 5 mm-10 mm, the height of the ceramic sleeve 9 is 5 cm-8 cm, preferably, the radius of the ceramic sleeve 9 is 8mm, the height is 6cm, and the ceramic sleeve 9 is made of Ti (C, N) -based metal ceramic; the Ti (C, N) -based metal ceramic has high hardness which can generally reach HRA 91-93.5, strong wear resistance and wear resistance, high heat resistance and chemical stability, can normally work at 1100-1300 ℃, and cannot be corroded along with PECVD high-temperature process and chemical components.
The invention also comprises a control method of the chemical vapor deposition platen structure, which comprises the following steps:
1) After the ceramic sleeve 9 is arranged in the PIN hole 8, the ceramic sleeve 9 and the PIN hole 8 are welded together, and the ceramic sleeve 9 is arranged in the anode platen 2;
2) Anodic oxidation, namely placing an anode platen 2 made of aluminum into acid electrolyte, and simultaneously applying current, preparing a layer of compact insulating aluminum oxide on the surface of the anode platen 2, and performing anodic oxidation on the welding part of a ceramic sleeve 9 and a PIN hole 8 while performing anodic oxidation on the anode platen 2;
3) The PIN5 is lifted up and down in the ceramic sleeve 9 to push the glass substrate 3 to move, the PIN cannot rub on the anode of the surface of the anode platen 2 to oxidize, and when micro particles fall into the ceramic sleeve 9, the micro particles slide down to the bottom of the cavity 1 along the inner wall of the ceramic sleeve 9;
4) The air exhaust pipeline 7 is used for exhausting the microparticles, so that the thin film structure inside the cavity 1 is prevented from being polluted.
In specific use, the radius of the ceramic sleeve 9 is preferably 8mm, the height is 6cm, and the ceramic sleeve 9 is made of Ti (C, N) -based cermet; the Ti (C, N) base metal ceramic has high hardness which can generally reach HRA 91-93.5, high wear resistance and high wear resistance, and has high heat resistance and chemical stability, can normally work at 1100-1300 ℃, cannot be corroded along with PECVD high-temperature process and chemical components, the inner wall surface of the ceramic sleeve 9 is smooth, the ceramic sleeve 9 and the PIN hole 8 are welded together, then anodic oxidation is carried out, the anode platen 2 made of aluminum is put into acid electrolyte, meanwhile, current is conducted, a layer of compact insulating aluminum oxide is prepared on the surface of the anode platen 2, the insulating effect is realized, and the welding part of the ceramic sleeve 9 and the PIN hole 8 is anodized when the anode platen 2 is anodized; the air hole diffusion plate 4 is arranged in the cavity 1, and the air hole diffusion plate 4 is arranged at the upper end of the glass substrate 3; when PIN5 goes up and down in ceramic sleeve 9 and accepts glass substrate 3, PIN5 can not rub the anodic oxidation on anode platen 2 surface to when having the microparticle to drop in ceramic sleeve 9 inside, because ceramic sleeve 9 is hollow structural design, sleeve internal roughness is very little, and the surface is smooth, and the microparticle drops in the back, directly slides to the bottom of cavity 1, is taken out by the pipeline 77 of bleeding, can not pollute the inside film structure of cavity 1, and this structure has avoided the destruction of metal platen surface anodic oxidation layer, has reduced the possibility of abnormal discharge, and reduced microparticle's gathering has improved the cleanliness factor of cavity.
The invention and its embodiments have been described above with no limitation, and the actual construction is not limited to the embodiments of the invention as shown in the drawings. In summary, if one of ordinary skill in the art is informed by this disclosure, a structural manner and an embodiment similar to the technical solution should not be creatively devised without departing from the gist of the present invention.
Claims (5)
1. The control method of the chemical vapor deposition platen structure is characterized in that the chemical vapor deposition platen structure comprises a cavity, an anode platen, a glass substrate, an air hole diffusion plate, PIN (personal identification number), PIN holes and a ceramic sleeve, wherein the anode platen is arranged in the cavity, the glass substrate is movably arranged on the upper wall of the anode platen, the PIN holes are penetrated on the anode platen, and the ceramic sleeve is fixedly arranged in the PIN holes; the air hole diffusion plate is arranged in the cavity and is arranged at the upper end of the glass substrate; the upper wall of the cavity is provided with a gas inlet pipeline; the bottom wall of the cavity is provided with an air exhaust pipeline; the ceramic sleeve is arranged in a cylindrical hollow cavity which is penetrated up and down;
the control method comprises the following steps:
after the ceramic sleeve is arranged in the PIN hole, the ceramic sleeve and the PIN hole are welded together, and the ceramic sleeve is arranged in the anode platen;
anodic oxidation, namely placing an anode platen made of aluminum into acid electrolyte, simultaneously applying current, preparing a layer of compact insulating aluminum oxide on the surface of the anode platen, and anodic oxidation is also carried out on the welding part of the ceramic sleeve and the PIN hole while the anode platen is anodic oxidized;
the PIN is lifted up and down in the ceramic sleeve to push the glass substrate to move, the PIN cannot rub against the anodic oxidation of the surface of the anode platen, and when micro particles fall into the ceramic sleeve, the micro particles slide down to the bottom of the cavity along the inner wall of the ceramic sleeve;
the air exhaust pipeline is used for exhausting the microparticles, so that the thin film structure inside the cavity is prevented from being polluted.
2. The method for controlling a platen structure according to claim 1, wherein the radius of the ceramic sleeve is 5 mm-10 mm, and the height of the ceramic sleeve is 5 cm-8 cm.
3. The method of claim 1, wherein the ceramic sleeve has a radius of 8mm.
4. The method of claim 1, wherein the ceramic sleeve has a height of 6cm.
5. The method of claim 1, wherein the ceramic sleeve material is a Ti (C, N) -based cermet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202111082244.5A CN113652673B (en) | 2021-09-15 | 2021-09-15 | Chemical vapor deposition platen structure and control method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202111082244.5A CN113652673B (en) | 2021-09-15 | 2021-09-15 | Chemical vapor deposition platen structure and control method thereof |
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| CN113652673B true CN113652673B (en) | 2023-11-24 |
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| CN1655336A (en) * | 2004-02-12 | 2005-08-17 | 应用材料股份有限公司 | Substrate support bushing |
| CN105039934A (en) * | 2015-09-15 | 2015-11-11 | 京东方科技集团股份有限公司 | Rolling wheel sleeve |
| CN216274364U (en) * | 2021-09-15 | 2022-04-12 | 福建华佳彩有限公司 | Chemical vapor deposition platen structure |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6863926B2 (en) * | 2002-01-15 | 2005-03-08 | David Mark Lynn | Corrosive-resistant coating over aluminum substrates for use in plasma deposition and etch environments |
| JP5896387B2 (en) * | 2011-10-20 | 2016-03-30 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Substrate support bushing |
| JP6456601B2 (en) * | 2014-05-07 | 2019-01-23 | 東京エレクトロン株式会社 | Plasma deposition system |
| US11572617B2 (en) * | 2016-05-03 | 2023-02-07 | Applied Materials, Inc. | Protective metal oxy-fluoride coatings |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5976900A (en) * | 1997-12-08 | 1999-11-02 | Cypress Semiconductor Corp. | Method of reducing impurity contamination in semiconductor process chambers |
| CN1655336A (en) * | 2004-02-12 | 2005-08-17 | 应用材料股份有限公司 | Substrate support bushing |
| CN105039934A (en) * | 2015-09-15 | 2015-11-11 | 京东方科技集团股份有限公司 | Rolling wheel sleeve |
| CN216274364U (en) * | 2021-09-15 | 2022-04-12 | 福建华佳彩有限公司 | Chemical vapor deposition platen structure |
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| CN113652673A (en) | 2021-11-16 |
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