CN113652128B - Wafer plasma cutting protection liquid and preparation method and application thereof - Google Patents
Wafer plasma cutting protection liquid and preparation method and application thereof Download PDFInfo
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Abstract
The invention provides a wafer plasma cutting protective solution, a preparation method and application thereof. The wafer plasma cutting protection solution comprises the following components in parts by weight: 5-40 parts of water-soluble resin; 0.1-2 parts of a wetting agent; 0.1-2 parts of a defoaming agent; 0.1-2 parts of a free radical scavenger; 5-20 parts of an organic solvent; 34-89.7 parts of water. The wafer plasma cutting protective solution can quickly form a film on the surface of a wafer and has good heat resistance and removability. When the protective solution is used for processing a wafer, condensed silicon vapor or other scraps generated in the processing process can be effectively prevented from depositing on the surface of a chip; meanwhile, the wafer plasma cutting protective solution has higher thermal stability, can avoid the direct exposure of the surface of the wafer to the external environment due to the thermal effect of laser cutting or the decomposition of a protective film when plasma cutting is carried out at higher working temperature, and effectively improves the reliability and yield of products.
Description
Technical Field
The invention relates to a chip manufacturing technology, in particular to a wafer plasma cutting protective solution, a preparation method and application thereof.
Background
Wafer refers to the silicon wafer used in the fabrication of silicon semiconductor integrated circuits, and wafer dicing is a critical process for packaging integrated circuits. If the reliability of the wafer surface can not be improved in the cutting process, the subsequent process is greatly influenced, and the production yield of chips is reduced.
Although the existing wafer cutting has been changed from the original cutting by a simple blade to the cutting by laser and plasma, when laser is irradiated along the cutting path of the wafer for cutting, the generated heat energy is easily absorbed by the wafer, and after the heat energy is absorbed, silicon is easily melted or thermally decomposed, silicon vapor is generated and condensed and deposited on the wafer, so that the peripheral edge of the wafer generates cutting chips; with the development of plasma etching technology, sometimes etching needs to be carried out at a higher working temperature; in addition, since the width of the scribe line is narrowed, and the semiconductor dicing device with high precision brings some thermal effect problems in use, such as cracking of the scribe line due to heat, chipping, direct exposure of the wafer due to thermal decomposition of the protective film, and the like, which all require the protective film to have relatively high thermal stability.
Patent application CN110408283A discloses a protective solution for plasma dicing of a wafer, which can form a film on the surface of the wafer rapidly and has high strength after film formation. CN105489472A discloses a front cutting protective solution, which reduces or avoids the generation of debris under different laser cutting powers. US8268449B2 discloses a composition for use as a protective coating which, when cured or dried, forms a chemically and heat resistant film that is readily dissolved and removed at the appropriate stage of the manufacturing process.
The conventional wafer plasma cutting protective solution can improve the cutting efficiency and stability of a wafer to a certain extent, and avoid the problems of cutting scraps or cracks and thermal stress, but has the problem that the protective solution cannot be applied to a plasma cutting environment under the condition of higher working temperature.
Disclosure of Invention
The invention aims to provide a wafer plasma cutting protective solution which can quickly form a film on the surface of a wafer and has good heat resistance and removability aiming at various problems existing in the conventional wafer plasma cutting. When the wafer plasma cutting protective liquid is used in wafer processing, condensed silicon vapor or other scraps generated in the processing process can be effectively prevented from depositing on the surface of a chip; meanwhile, the wafer plasma cutting protective solution has higher thermal stability, can avoid the direct exposure of the surface of the wafer to the external environment due to the thermal effect of laser cutting or the decomposition of a protective film when plasma cutting is carried out at higher working temperature, and effectively improves the reliability and yield of products.
In order to achieve the purpose, the invention adopts the technical scheme that: a wafer plasma cutting protection solution comprises the following components in parts by weight:
further, the water-soluble resin is selected from one or more of polyethylene oxide, polyacrylic acid, urea-formaldehyde resin, melamine-formaldehyde resin and polyethyleneimine; the molecular weight of the polyoxyethylene is 10-200 ten thousand, the molecular weight of the polyacrylic acid is 500-800 ten thousand, the molecular weight of the urea-formaldehyde resin is 1-10 ten thousand, the molecular weight of the melamine-formaldehyde resin is 1-10 ten thousand, and the molecular weight of the polyethyleneimine is 1-10 ten thousand; the preferable weight ratio of the water-soluble resin is 10-40 parts; more preferably 10-35 parts by weight.
Further, the water-soluble resin comprises polyoxyethylene and polyacrylic acid, and the dosage ratio of the polyoxyethylene to the polyacrylic acid is 1:2-1:7, and the preferred dosage ratio is 1:3-1: 5.
Further, the wetting agent is selected from one or more of long-chain fatty alcohol, alkyl sulfate, sulfonate, phosphate, polyoxyethylene alkylphenol ether and polyoxyethylene fatty alcohol ether; more preferably, the wetting agent is selected from one or more of long-chain fatty alcohol, polyoxyethylene alkylphenol ether and polyoxyethylene fatty alcohol ether, and is better compatible with polyoxyethylene resin and polyacrylic resin; the preferable weight ratio of the wetting agent is 0.1-1 part.
Further, the defoaming agent is selected from one or more of organic silicon, polyether modified siloxane, fatty acid and fatty acid ester, amide and phosphate; more preferably the antifoam agent is selected from silicones and/or polyether modified siloxanes; the preferable weight ratio of the defoaming agent is 0.1-1 part.
Further, the free radical scavenger is selected from one or more of p-benzoquinone, tetramethylbenzoquinone, 2,6, 6-tetramethylpiperidine and 2, 8-di-tert-butyl-4-methylphenol; more preferably the radical scavenger is selected from 2,2,6, 6-tetramethylpiperidine and/or a non-basic radical scavenger; the preferable weight ratio of the free radical scavenger is 0.1-1 part.
Further, the organic solvent is selected from one or more of alcohol, ether and ester, preferably the organic solvent is selected from one or more of absolute ethyl alcohol, isopropanol, ethylene glycol ethyl ether, ethylene glycol butyl ether, propylene glycol methyl ether, propylene glycol ethyl ether, propylene glycol butyl ether, dipropylene glycol ethyl ether, dipropylene glycol butyl ether, ethyl acetate and isopropyl acetate; more preferably, the organic solvent is selected from one or more of absolute ethyl alcohol, isopropyl alcohol, ethylene glycol butyl ether and propylene glycol methyl ether; the preferable weight ratio of the organic solvent is 5-10 parts.
The invention also discloses a preparation method of the wafer plasma cutting protective liquid, which comprises the following steps: the raw materials are added into a mixing container provided with a stirrer according to the weight ratio, and stirred for 0.5-2 hours at the speed of 300-1000rpm at normal temperature to prepare the wafer plasma cutting protective solution.
The invention also discloses the application of the wafer plasma cutting protective solution in the field of wafer processing.
Further, the wafer plasma cutting protection solution has the following applications in the field of wafer processing: firstly, uniformly dripping a wafer plasma cutting protective solution on the central position of a wafer placed on a spin coater, dripping 30-50ml of the wafer plasma cutting protective solution on each 12-inch wafer, rotating the wafer for 30-60 seconds at the speed of 200-1500 rpm by using the spin coater to slowly and uniformly spread the protective solution on the surface of the wafer, then rotating the wafer for 120-180 seconds at the speed of 1000-1500rpm, and finally placing the spin-coated wafer at room temperature for drying to form a film so that the wafer plasma cutting protective solution forms a uniform water-soluble protective film on the surface of the wafer; then, carrying out patterning treatment on the wafer coated with the water-soluble protective film by utilizing a laser scribing process, so that grooves are cut on the wafer and the water-soluble protective film, and finally, expanding the grooves by utilizing a plasma cutting process, and cutting chips on the wafer into core particles; after cutting, the protective film can be cleaned only by washing with warm water. The method is applied to thin wafers, can maximize the additional functions of each wafer or each area, is not limited by the shape, size or layout, improves the cutting precision and speed, and cuts the wafers into any shape. In addition, the protective liquid is uniformly coated before cutting to obtain a high-strength water-soluble protective film, so that the problems of cutting chips or cracks and thermal stress and the problems that the surface of a wafer is directly exposed to the external environment due to the local damage and decomposition of the protective film when the laser cutting is carried out or plasma cutting is carried out at the working temperature of 150-300 ℃ and the like can be avoided.
The wafer plasma cutting protective solution has scientific and reasonable formula and simple and feasible preparation method, and has the following advantages compared with the prior art:
1) the main chain of the polyoxyethylene molecule provided by the invention only contains methylene and ether bonds, and does not contain longer and active side chain groups, the thermal decomposition temperature of the main chain is above 390 ℃, and the thermal weight loss is low at the temperature of 300 ℃; meanwhile, the main chain of the polyacrylic acid molecule contains a large number of carboxylic acid groups, and the carboxylic acid groups can absorb heat energy to generate intramolecular dehydration and decarboxylation reactions under the high-temperature condition, so that the main chain is protected from thermal decomposition, and the thermal decomposition temperature of the main chain is above 300 ℃; therefore, the protective film formed by cutting the protective solution has higher thermal stability;
2) the polyacrylic acid provided by the invention can form a macromolecular association structure with polyoxyethylene, the crystallization tendency of the polyoxyethylene is reduced, the single polyoxyethylene is easy to crystallize after forming a film, the crystalline polymer is opaque, the non-crystalline polymer is transparent, and the film forming transparency is high after the polyacrylic acid is added;
3) the molecular weight of the water-soluble resin provided by the invention is more than 1 ten thousand, the number of the contained hydrogen bonds is large, the generated hydrogen bond force, van der Waals force and intermolecular force are strong, and the adhesive force between the cutting protection liquid and the base material is effectively improved;
4) the glass transition temperature TG of the polyacrylic acid provided by the invention is 106 ℃, the glass transition temperature TG of the polyoxyethylene is less than 75 ℃, and the higher the glass transition temperature is, the higher the temperature for converting the polyacrylic acid from a plastic state to a high elastic state is, the higher the lower limit temperature of thermal deformation generated by the material is, so that the glass transition temperature of the whole components can be increased after the polyacrylic acid is added, and the shape-preserving capability of the protective film under the high-temperature condition is enhanced;
5) the main component of the solvent is water, but the solvent contains part of organic solvent; the organic solvent can be one or more of absolute ethyl alcohol, isopropanol and ethylene glycol monobutyl ether, can be mutually soluble with water in any proportion, has good solubility on resin, belongs to micromolecules, has low boiling point and is easy to volatilize, can quickly carry water molecules to volatilize from the protective solution in the heating and pre-baking process, and shortens the film forming time;
6) the invention introduces the wetting agent to improve the film forming property of the protective liquid and reduce the contact angle between the protective liquid and the substrate;
7) the defoaming agent is introduced to reduce the surface tension of the protective liquid and avoid the formation of foam pores;
8) the introduced free radical trapping agent can absorb free radicals generated in the protective film in the plasma cutting process, and the degradation rate of the resin main chain structure is slowed down.
In conclusion, the wafer plasma cutting protective solution can quickly form a film on the surface of the wafer, and has good heat resistance and removability. During wafer processing, condensed silicon vapor or other scraps generated in the processing process can be effectively prevented from depositing on the surface of a chip; meanwhile, the material has higher thermal stability, and can avoid the direct exposure of the surface of the wafer to the external environment caused by the thermal effect of laser cutting or the decomposition of a protective film when plasma cutting is carried out at higher working temperature (300-; the reliability and yield of the product are improved.
Drawings
FIG. 1 is a 1000-fold microscope picture of the S1-36 laser scribing process.
FIG. 2 is a 1000-fold microscope picture of the D1-10 laser scribing process.
FIG. 3 is a 1000-fold microscopic picture of the grooves formed by plasma cutting of S1-36.
FIG. 4 is a 1000-fold microscopic picture of a trench formed by plasma cutting of D1-10.
FIG. 5 is a scanning electron microscope photograph of S1-36 taken at 35000 times the sidewalls of the grooves formed by plasma cutting.
Detailed Description
The invention is further illustrated by the following examples:
example 1
Respectively weighing the following components in percentage by mass based on 100 percent by weight in total: 1% by weight of polyethylene oxide having a molecular weight of 10 ten thousand and 4% by weight of polyacrylic acid having a molecular weight of 500 ten thousand, 0.1% by weight of polyoxyethylene alkylphenol ether, 0.1% by weight of polydimethylsiloxane, 0.1% by weight of 2,2,6, 6-tetramethylpiperidine, 10% by weight of anhydrous ethanol, 84.7% by weight of water. Putting the materials into a stirrer, stirring at normal temperature and 500rpm for 1 hour until the materials are uniform and transparent, preparing the wafer plasma cutting protective solution, and naming the wafer plasma cutting protective solution as S1, wherein the naming rules are adopted in the subsequent embodiments.
Example 2
Respectively weighing the following components in percentage by mass based on 100 percent by weight in total: 10% by weight of polyethylene oxide having a molecular weight of 10 ten thousand and 25% by weight of polyacrylic acid having a molecular weight of 500 ten thousand, 1% by weight of polyoxyethylene alkylphenol ether, 0.1% by weight of a GPES type defoaming agent, 1% by weight of 2,2,6, 6-tetramethylpiperidine, 10% by weight of isopropanol, 52.9% by weight of water. And putting the materials into a stirrer, stirring at the normal temperature at the speed of 500rpm for 1 hour until the materials are uniform and transparent, and preparing the wafer plasma cutting protective solution which is named as S2.
Example 3
Respectively weighing the following components in percentage by mass based on 100 percent by weight in total: 2% by weight of polyethylene oxide having a molecular weight of 10 ten thousand and 8% by weight of polyethylene oxide having a molecular weight of 500 ten thousand, 0.5% by weight of polyoxyethylene alkylphenol ether, 1.0% by weight of fatty acid ester, 0.5% by weight of 2,2,6, 6-tetramethylpiperidine, 10% by weight of ethylene glycol butyl ether, 78% by weight of water. And putting the materials into a stirrer, stirring at the normal temperature at the speed of 500rpm for 1 hour until the materials are uniform and transparent, and preparing the wafer plasma cutting protective solution which is named as S3.
Examples 4 to 36
The soluble resin is polyoxyethylene with a molecular weight of 10 ten thousand and polyacrylic acid with a molecular weight of 500 ten thousand, the preparation method is the same as that of the embodiment 1-3, the obtained cutting protection solution is respectively marked as S4, S5 and S6 … … S36, and the specific composition of the protection solution is shown in Table 1.
TABLE 1
Comparative examples 1 to 4
Comparative examples 1-4 were prepared by the same procedure as in examples 1-3 except that the polyethylene oxide in the examples was replaced with the soluble resins shown in the following table, and comparative examples 1-4 resulted in cutting protection solutions D1-D4, as shown in Table 2.
TABLE 2
Comparative examples 5 to 7
Comparative examples 5 to 7, in comparison with examples 1 to 3, the same procedure was conducted except that the polyoxyethylene alkylphenol ethers in the examples were replaced with the wetting agents shown in the following table, and comparative examples 5 to 7 prepared cutting protection solutions D5 to D7 as shown in table 3.
TABLE 3
| Comparative example | Wetting agent | Corresponding embodiment |
| D5 | C ten long chain fatty alcohol | S1 |
| D6 | Dodecyl sulfate salt | S2 |
| D7 | Polyoxyethylene fatty alcohol ethers | S3 |
Comparative examples 8 to 10
Comparative examples 8 to 10, in which D8, D9 and D10 were prepared in the same manner as in examples 1 to 3 except that the radical scavenger, 2,6, 6-tetramethylpiperidine, was replaced with p-benzoquinone, tetramethylbenzoquinone and 2, 8-di-t-butyl-4-methylphenol, respectively.
Performance test of wafer cutting protection liquid
I. Thermal stability
After the wafer cutting protective solution of the above examples and comparative examples is obtained, the protective solution is uniformly coated on a glass slide glass in a rotating manner, and the temperature is heated to about 110 ℃ for about 3-5 minutes, so that the protective solution forms a water-soluble protective film on the surface of a silicon wafer; the examples were placed in an oven and baked at 300 ℃ and 400 ℃ for 30 minutes, respectively, and the state of the protective film was observed; the comparative examples were placed in an oven and baked at 200 ℃ and 300 ℃ for 30 minutes, respectively, and the states of the protective films were observed to examine their respective thermal stability properties, and the results are shown in Table 4.
TABLE 4
| Numbering | 300℃/30min | 400℃/30min | Numbering | 300℃/30min | 400℃/30min |
| S1 | Colorless and transparent | Colorless and transparent | S19 | Colorless and transparent | Colorless and transparent |
| S2 | Colorless and transparent | Colorless and transparent | S20 | Colorless and transparent | Colorless and transparent |
| S3 | Colorless and transparent | Colorless and transparent | S21 | Colorless and transparent | Colorless and transparent |
| S4 | Colorless and transparent | Colorless and transparent | S22 | Colorless and transparent | Colorless and transparent |
| S5 | Colorless and transparent | Colorless and transparent | S23 | Colorless and transparent | Colorless and transparent |
| S6 | Colorless and transparent | Colorless and transparent | S24 | Colorless and transparent | Colorless and transparent |
| S7 | Colorless and transparent | Colorless and transparent | S25 | Colorless and transparent | Colorless and transparent |
| S8 | Colorless and transparent | Colorless and transparent | S26 | Colorless and transparent | Colorless and transparent |
| S9 | Colorless and transparent | Colorless and transparent | S27 | Colorless and transparent | Colorless and transparent |
| S10 | Colorless and transparent | Colorless transparentMing dynasty | S28 | Colorless and transparent | Colorless and transparent |
| S11 | Colorless and transparent | Colorless and transparent | S29 | Colorless and transparent | Colorless and transparent |
| S12 | Colorless and transparent | Colorless and transparent | S30 | Colorless and transparent | Colorless and transparent |
| S13 | Colorless and transparent | Colorless and transparent | S31 | Colorless and transparent | Colorless and transparent |
| S14 | Colorless and transparent | Colorless and transparent | S32 | Colorless and transparent | Colorless and transparent |
| S15 | Colorless and transparent | Colorless and transparent | S33 | Colorless and transparent | Colorless and transparent |
| S16 | Colorless and transparent | Colorless and transparent | S34 | Colorless and transparent | Colorless and transparent |
| S17 | Colorless and transparent | Colorless and transparent | S35 | Colorless and transparent | Colorless and transparent |
| S18 | Colorless and transparent | Colorless and transparent | S36 | Colorless and transparent | Colorless and transparent |
| Numbering | 200℃/30min | 300℃/30min | Numbering | 200℃/30min | 300℃/30min |
| D1 | Deep yellow | Dark brown color | D6 | Yellow colour | Coating destruction |
| D2 | Deep yellow | Dark brown color | D7 | Yellow colour | Coating destruction |
| D3 | Deep yellow | Dark brown color | D8 | Yellow colour | Coating destruction |
| D4 | Deep yellow | Dark brown color | D9 | Yellow colour | Coating destruction |
| D5 | Deep yellow | Dark brown color | D10 | Yellow colour | Coating destruction |
As can be seen from the above test results, the wafer plasma cutting protective solutions of examples 1-36 were not significantly changed in appearance after being baked at 300 deg.C and 400 deg.C for 30 minutes; while comparative examples 1-10 all showed significant changes in appearance after being baked at 200 c and 300 c for 30 minutes, indicating that severe thermal decomposition reactions have occurred, demonstrating that the thermal stability of examples 1-36 is significantly better than comparative examples 1-10.
II. Plasma etch rate testing
After the wafer cutting protective solution of the above examples and comparative examples is obtained, the protective solution is uniformly coated on a silicon wafer in a rotating manner, and the silicon wafer is heated to 110 ℃ for 3 to 5 minutes, so that a water-soluble protective film is formed on the surface of the silicon wafer by the protective solution; patterning the silicon wafer coated with the water-soluble protective film by using a laser scribing process, and forming grooves on the water-soluble protective film and the surface of the silicon wafer; carrying out plasma cutting: etching to form a corresponding trench extension using a plasma process; the etch rate profile is shown in table 5.
TABLE 5
From the test results, the wafer plasma cutting protective solutions of the embodiments 1, 2 and 3 have higher etching rate ratios, and can meet the basic requirements of being used as a plasma etching protective film; and the etching rate ratio of the wafer plasma cutting protective liquid in the embodiment 1 and the embodiment 2 is far higher than that of the comparative examples 1-4, so that the etching selectivity is better. Therefore, the thickness of the protective film is thinner when the same protective effect is achieved in the plasma cutting process, the finally obtained cutting path boundary is clearer, and the side wall is smoother.
FIG. 1 is a microscope picture enlarged 1000 times by laser scribing using the S1-36 cutting protection solution, and it is clear that the chip protection near the cutting street is good and the boundary is clear, which shows that the cutting protection solution is not decomposed at high temperature and is resistant to high temperature.
Fig. 2 is a microscope picture of D1-10 cutting protection solution magnified 1000 times by laser scribing, which can clearly show that the vicinity of the cutting street is damaged and the boundary is fuzzy, and shows that the protection film near the cutting street is decomposed and does not resist high temperature during the laser processing.
FIG. 3 is a 1000-fold magnified microscopic image of the trench formed after plasma dicing using the protective solution for dicing S1-36, and it is clear that the protective film is not decomposed at high temperature and the chip near the dicing street is well protected. Fig. 4 is a 1000-fold micrograph of a groove formed by plasma cutting using the D1-10 cutting protection solution, and it can be clearly seen that the protection film is decomposed at high temperature, and the chip near the cutting street is damaged after being exposed and cannot resist high temperature.
FIG. 5 is a 35000 times magnified scanning electron microscope image of a trench sidewall formed by plasma cutting using the protective solution S1-36, from which it can be clearly observed that the cut sidewall is flat and smooth, and has no significant lateral etching.
Therefore, by adopting two soluble resins of polyethylene oxide and polyacrylic acid, the wetting agent capable of reducing the contact angle between the cutting protection liquid and the surface of the substrate and the defoaming agent capable of reducing the surface tension of the cutting protection liquid are compounded, so that the high-temperature resistance of the cutting protection liquid is obviously improved, the definition of the cutting path boundary and the flatness of the side wall in the laser and plasma cutting processes are effectively improved, and the subsequent chip processing is facilitated.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (8)
1. The wafer plasma cutting protection solution is characterized by comprising the following components in parts by weight:
5-40 parts of water-soluble resin;
0.1-2 parts of a wetting agent;
0.1-2 parts of a defoaming agent;
0.1-2 parts of a free radical scavenger;
5-20 parts of an organic solvent;
34-89.7 parts of water;
the water-soluble resin comprises polyoxyethylene and polyacrylic acid, the dosage ratio of the polyoxyethylene to the polyacrylic acid is 1:2-1:7, the molecular weight of the polyoxyethylene is 10-200 ten thousand, and the molecular weight of the polyacrylic acid is 500-800 ten thousand; the wetting agent is polyoxyethylene alkylphenol ether.
2. The wafer plasma cutting protection solution as claimed in claim 1, wherein the wetting agent is 0.1-1 parts by weight.
3. The wafer plasma cutting protection solution as claimed in claim 1, wherein the defoaming agent is selected from one or more of silicones, polyethers, polyether modified siloxanes, fatty acids and fatty acid esters, amides and phosphates; the weight ratio of the defoaming agent is 0.1-1.
4. The wafer plasma cutting protection solution of claim 1, wherein the radical scavenger is selected from one or more of p-benzoquinone, tetramethylbenzoquinone, 2,6, 6-tetramethylpiperidine and 2, 8-di-tert-butyl-4-methylphenol; the weight ratio of the free radical trapping agent is 0.1-1 part.
5. The wafer plasma cutting protection solution as claimed in claim 1, wherein the organic solvent is selected from one or more of alcohol and ether, and the weight ratio of the organic solvent is 5-10 parts.
6. A preparation method of the wafer plasma cutting protection solution as claimed in any one of claims 1 to 5, characterized by comprising the following steps: the raw materials are added into a mixing container provided with a stirrer according to the weight ratio, and stirred for 0.5-2 hours at the speed of 300 plus one 1000rpm at normal temperature to prepare the wafer plasma cutting protective solution.
7. Use of the wafer plasma cutting protection solution as defined in any one of claims 1-5 in the field of wafer processing.
8. The use of the wafer plasma cutting protection solution in the wafer processing field as claimed in claim 7, wherein the wafer plasma cutting protection solution is first uniformly coated on the wafer to form a uniform water-soluble protection film on the surface of the wafer; and then, carrying out patterning treatment on the wafer coated with the water-soluble protective film by utilizing a laser scribing process, so that grooves are cut on the wafer and the water-soluble protective film, and finally, expanding the grooves.
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| CN116179259A (en) * | 2023-02-18 | 2023-05-30 | 滁州默尔新材料科技有限公司 | Chip precise cutting protection liquid capable of rapidly absorbing heat and preparation method thereof |
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