CN113649657B - Nano-scale polycrystalline silicon tool electrode for electrolytic machining and preparation method thereof - Google Patents

Nano-scale polycrystalline silicon tool electrode for electrolytic machining and preparation method thereof Download PDF

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CN113649657B
CN113649657B CN202110606852.5A CN202110606852A CN113649657B CN 113649657 B CN113649657 B CN 113649657B CN 202110606852 A CN202110606852 A CN 202110606852A CN 113649657 B CN113649657 B CN 113649657B
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polycrystalline silicon
tool electrode
silicon
electrode
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CN113649657A (en
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刘国栋
李勇
祝玉兰
佟浩
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Tsinghua University
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H3/00—Electrochemical machining, i.e. removing metal by passing current between an electrode and a workpiece in the presence of an electrolyte
    • B23H3/04—Electrodes specially adapted therefor or their manufacture
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H11/00—Auxiliary apparatus or details, not otherwise provided for
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H3/00—Electrochemical machining, i.e. removing metal by passing current between an electrode and a workpiece in the presence of an electrolyte
    • B23H3/04—Electrodes specially adapted therefor or their manufacture
    • B23H3/06—Electrode material

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Abstract

The invention belongs to the technical field of special processing, and particularly relates to a nanoscale polycrystalline silicon tool electrode for electrolytic processing and a preparation method thereof. The invention adopts a deposition process in the field of MEMS, deposits a graphical polycrystalline silicon layer with the size of dozens to hundreds of nanometers on the graphical sacrificial layer, then dopes the graphical polycrystalline silicon layer, and removes the graphical sacrificial layer to obtain the tool electrode for nano electrolytic machining. The polysilicon tool electrode prepared by the method has high hardness and high rigidity of the silicon material, can ensure no deformation under the condition of fine size, and has better processing precision than a metal electrode. The crystalline silicon tool electrode has low processing process cost and good repeatability, and has wide application prospect in the field of micromachining. The silicon micro-machining process related to the method is quite mature, and the characteristic size of the tool electrode can be further reduced; the nano tool electrode for electrolytic machining is obtained on the silicon wafer through an etching process, and the nano tool electrode has application potential of mass production.

Description

Nano-scale polycrystalline silicon tool electrode for electrolytic machining and preparation method thereof
Technical Field
The invention belongs to the technical field of special machining, and particularly relates to a nanoscale polycrystalline silicon tool electrode for electrolytic machining and a preparation method thereof.
Background
With the rapid development of science and technology, the miniaturization of functional structures has become a development trend in various fields such as optics, electronics, biology, aerospace and the like, and the structure size is correspondingly reduced to the micrometer level or even the nanometer level. Currently, nano-fabrication is one of the top points of the world's technology competition. The nano-manufacturing process expands the manufactured objects from macroscopical to nanoscopic, and opens up a new research field. Based on the principles of physical/chemical/biological fabrication, certain advances are currently made in nanoimprint, confined etchant layer techniques, high-energy beam (ultrafast laser, electron beam, ion beam) processing, nanoimprint techniques, and electrolytic processing. The nano electrolytic machining technology has the advantages of no tool electrode loss, low cost and the like in mechanism, and has obvious advantages in the aspects of the range of machining materials, the diversity of machining structures and the cost.
The nanoscale tool electrode is a necessary condition for carrying out nano electrolytic machining as a tool, and the characteristic size of the nanoscale tool electrode directly influences the size and the precision of the nano electrolytic machining. At present, researchers at home and abroad respectively adopt an electrochemical etching technology, a mechanical shearing technology, a controlled bursting technology, a flame grinding technology, a focused ion beam milling technology, a silver nanowire self-assembly technology, a carbon nanotube bundle welding technology and the like to prepare a tip arc with the radius generally within the range of 10-100nm, the tip of an electrode is in a pointed cone shape and has large taper, the side wall of a structure machined by the electrode has large taper, and particularly when the machining depth is large, the dimensional accuracy of the machined structure is severely limited. Although the nano-scale electrode can be prepared by adopting methods such as focused ion milling, self-assembly technology and the like, the focused ion milling equipment is expensive, the cost for preparing the electrode is high, and the method is not suitable for batch manufacturing. Although the immersion electrochemical etching method for preparing the microelectrode is also verified, the dimension consistency of the electrode is insufficient, and the repeatability is poor.
The design and preparation process of the monocrystalline silicon tool electrode are explained by the 'superfine monocrystalline silicon tool electrode for electrolytic machining and the preparation process thereof' adopted by the invention patent of China (publication number: CN 201610909851.7), the preparation of the micron-sized tool electrode can be realized, and the prepared tool electrode is proved to be effective and feasible. Currently, the electron beam lithography technology can realize the writing with the characteristic dimension (line width) less than 50nm, so that the preparation of the tool electrode for the electrochemical machining with the nanometer scale by using the silicon material has feasibility.
Disclosure of Invention
The invention aims to provide a nanoscale polycrystalline silicon tool electrode for electrolytic machining and a preparation method thereof, aims at the defects of the prior art, takes the characteristic dimension of the microscale tool electrode smaller than 100nm as a research target, and is used for meeting the application requirement of the nanoscale electrolytic machining.
The invention provides a nano-scale polycrystalline silicon tool electrode for electrolytic machining, which comprises a silicon substrate, a conductive metal layer and a polycrystalline silicon cathode; the front part of the conductive metal layer is connected with the rear part of the polycrystalline silicon cathode, and the rear part of the conductive metal layer is positioned on the silicon substrate; the front end part of the polycrystalline silicon cathode is an electrode working end, and the rear part of the polycrystalline silicon cathode is mutually connected with the front part of the silicon substrate through the substrate adhesion layer; and the back surface of the silicon substrate is provided with a positioning groove for clamping and positioning the tool electrode and other workpieces when the polycrystalline silicon tool electrode is in a working state.
The invention provides a preparation method of a nano-scale polycrystalline silicon tool electrode for electrolytic machining, which adopts a deposition process in the field of MEMS to deposit a patterned polycrystalline silicon layer with the size of dozens to hundreds of nanometers on a patterned sacrificial layer, then dopes the patterned polycrystalline silicon layer, and removes the patterned sacrificial layer to obtain the tool electrode directly used for nano electrolytic machining.
The nano-scale polycrystalline silicon tool electrode for electrolytic machining and the preparation method thereof provided by the invention have the following characteristics and advantages:
the invention relates to a polysilicon tool electrode and a preparation method thereof, which adopts a deposition process in the field of MEMS to deposit a graphical polysilicon layer with the size of dozens to hundreds of nanometers on a graphical sacrificial layer, then dopes the graphical polysilicon layer, and removes the graphical sacrificial layer to obtain the tool electrode directly used for nano electrolytic machining. The polysilicon tool electrode prepared by the method has high hardness and high rigidity of the silicon material, can ensure no deformation under the condition of fine size, and has better processing precision than a metal electrode. The crystalline silicon tool electrode has low processing process cost and good repeatability, and has wide application prospect in the field of micromachining. In the preparation process of the crystalline silicon tool electrode, the related silicon micro-processing technology is quite mature, so that the characteristic dimension of the tool electrode can be further reduced; the nano tool electrode for electrolytic machining is obtained on the silicon wafer through an etching process, and the nano tool electrode has application potential of mass production.
Drawings
FIG. 1 is a schematic structural view of a nano-scale polysilicon tool electrode for electrochemical machining and a method for preparing the same according to the present invention.
FIG. 2 is a schematic diagram of a polysilicon tool electrode fabrication process in accordance with the present invention.
In FIGS. 1 and 2, 1 is a conductive metal layer, 2 is a polysilicon cathode, 3 is a silicon substrate, 201 is a substrate adhesion layer, 202 is an electrode working end, and 301 is a positioning groove.
In fig. 2, a is a single crystalline silicon material substrate, B is a patterned sacrificial layer, C is a patterned polycrystalline silicon layer, D is a polycrystalline silicon electrode layer, E is a patterned metal layer, F is a masking layer, and G is a back side etching window.
Detailed Description
The structure of the nano-scale polycrystalline silicon tool electrode for electrolytic machining is shown in figure 1, wherein (a) in figure 1 is a front view of the polycrystalline silicon tool electrode, and (b) is a back view of the polycrystalline silicon tool electrode, and the polycrystalline silicon tool electrode comprises a silicon substrate 3, a conductive metal layer 1 and a polycrystalline silicon cathode 2; the front part of the conductive metal layer 1 is connected with the rear part of the polycrystalline silicon cathode 2, and the rear part of the conductive metal layer 1 is positioned on the silicon substrate 3; the front end part of the polycrystalline silicon cathode 2 is an electrode working end 202, and the rear part of the polycrystalline silicon cathode 2 is mutually connected with the front part of the silicon substrate 3 through a substrate adhesion layer 201; the back of the silicon substrate 3 is provided with a positioning groove 301 for clamping and positioning the tool electrode and other workpieces when the polysilicon tool electrode is in a working state.
In the tool electrode, the polycrystalline silicon cathode 2 is made of a polycrystalline silicon material doped with high concentration, the size of the polycrystalline silicon cathode on the surface of the monocrystalline silicon substrate is millimeter level, the polycrystalline silicon cathode 2 is connected with the conductive metal layer 1, and the characteristic size of the electrode working end 202 of the polycrystalline silicon cathode 2 is nanometer level.
In the tool electrode, the polycrystalline silicon cathode 2 comprises a substrate adhesion layer 201 and an electrode working end 202 which are both made of high-concentration doped polycrystalline silicon materials, a high-concentration doped doping element is phosphorus or boron, and the conductivity of the polycrystalline silicon cathode 2 is less than 10 -2 Ωcm。
In the tool electrode, the conductive metal layer 1 is a patterned film prepared by a metal stripping process and a metal deposition process, and the metal is silver, platinum or gold, preferably platinum.
The invention provides a preparation method of a nano-scale polycrystalline silicon tool electrode for electrolytic machining, which comprises the following steps:
(1) Providing a monocrystalline silicon material substrate A; as shown in fig. 2 (a).
(2) Preparing a patterned sacrificial layer B on a monocrystalline silicon material substrate A; as shown in fig. 2 (b).
(3) Depositing a graphical polycrystalline silicon layer C on the monocrystalline silicon material substrate A and the graphical sacrificial layer B in the step (1); as shown in fig. 2 (c).
(4) Carrying out high-concentration doping on the graphical polycrystalline silicon layer C obtained in the step (3) to obtain a polycrystalline silicon electrode layer D; as shown in fig. 2 (d).
(5) Etching the polycrystalline silicon electrode layer D obtained in the step (4), and depositing a metal layer on the surface of the etched polycrystalline silicon to obtain a metal layer E; as shown in fig. 2 (e).
(6) Respectively depositing a masking layer F on the bottom surface and the top surface of the monocrystalline silicon material substrate A in the step (5); as shown in fig. 2 (f).
(7) Etching the masking layer F on the bottom surface and the top surface of the monocrystalline silicon material substrate A in the step (6) to obtain a patterned etching window, then etching a thinning window G and a positioning groove 301 on the bottom surface of the monocrystalline silicon material substrate A, and etching a basic outline of a tool electrode on the top surface of the monocrystalline silicon material substrate A; as shown in fig. 2 (g).
(8) Etching the middle point H of the patterned polycrystalline silicon layer C in the step (7); as shown in fig. 2 (h).
(9) Performing a wet etching process on the patterned sacrificial layer B in the tool electrode in the step (8) to remove the patterned sacrificial layer B; as shown in fig. 2 (i).
(10) And (5) at the funnel-shaped groove in the step (8), disconnecting the monocrystalline silicon material substrate A according to the profile of the tool electrode, and separating the tool electrode from the monocrystalline silicon material substrate A to obtain an independent tool electrode. As shown in fig. 2 (j).
In the step (2) of the preparation method, a layer of silicon dioxide is deposited on the monocrystalline silicon material substrate A by adopting a deposition process, wherein the thickness of the silicon dioxide is 10-500nm, and a graphical sacrificial layer B is obtained; performing one-time photoetching on the patterned sacrificial layer B by adopting an etching process to remove SiO 2 Until the monocrystalline silicon material base a is exposed.
The specific process of the step (3) of the preparation method is as follows: and (3) taking the photoresist as a mask, depositing a layer of polycrystalline silicon on the monocrystalline silicon material substrate A and the patterned sacrificial layer B in the step (2), and removing the photoresist to obtain a patterned polycrystalline silicon layer C, wherein the thickness of the patterned polycrystalline silicon layer C is 20-200nm, and is preferably 100nm.
In the step (4) of the preparation method, the patterned polysilicon layer C is integrally doped, and the doping concentration needs to be 10 19 ～10 20 /cm 2 In the range of preferably 10 20 /cm 2 The doping type is N type or P type, preferably N type, and a polysilicon electrode layer D is formed.
The specific process of the step (5) of the preparation method is as follows: and depositing a metal layer on the surface of the polycrystalline silicon electrode layer D by taking the photoresist as a mask, removing the photoresist to obtain a patterned metal layer E, wherein the material of the metal layer is inert metal, preferably gold or platinum, and the thickness of the deposited metal layer is 100-500nm, preferably 100nm.
In the step (9) of the preparation method, the masking layer F is removed, single-side photoetching is carried out on the surface of the polycrystalline silicon electrode layer D, the photoresist is used as a mask, etching is carried out between two opposite silicon electrodes, and the two silicon electrodes are separated.
The tool electrode and the method for manufacturing the same according to the present invention will be described in further detail with reference to the following embodiments and accompanying drawings:
the nano-scale polycrystalline silicon tool electrode is composed of a conductive metal layer 1, a polycrystalline silicon cathode 2 and a silicon substrate 3, wherein the polycrystalline silicon cathode 2 is composed of a substrate attachment layer 201 and an electrode processing part 202, the substrate attachment layer 201 is attached to the surface of the silicon substrate 3, the electrode processing part 202 and the substrate attachment layer 201 are integrated and extend out of the silicon substrate 3 to form a cantilever structure, the silicon substrate 3 is used for clamping an electrode and is called an electrode clamping part, and a positioning groove 301 is arranged on the silicon substrate 3. The conductive metal layer 1 is disposed on the substrate attachment layer 201 and is in conductive communication therewith. The characteristic dimensions of the silicon substrate 3, the conductive metal layer 1 and the substrate adhesion layer 201 are in the order of millimeters, and the characteristic dimension of the electrode processing portion 202 is in the order of nanometers.
The conductive metal layer 1 is a patterned thin film prepared by lift-off process and metal deposition process, and the metal species may be silver, platinum, gold, etc., preferably platinum. The silicon substrate 3 is an undoped single crystal silicon material.
In the preparation method of the nano-scale polycrystalline silicon tool electrode, the monocrystalline silicon material substrate A is an undoped silicon wafer, the crystal face of the silicon wafer is a (100) crystal face, the two faces of the silicon wafer are polished, and the thickness of the silicon wafer is 200-500 mu m, preferably 200 mu m. As shown in fig. 2 (a).
In the step (2) of the preparation method, a layer of silicon dioxide (SiO) is deposited on the monocrystalline silicon material substrate A by adopting a chemical vapor deposition process 2 ) And the thickness is 10-500nm, preferably 100nm, as the patterned sacrificial layer B. And then, carrying out photoetching on the patterned sacrificial layer B once. SiO removal by etching process 2 And obtaining a patterned sacrificial layer B. As shown in fig. 2 (b).
In the step (3) of the preparation method, single-side photoetching is carried out on the surfaces of the silicon wafer and the patterned sacrificial layer B. And depositing a layer of polycrystalline silicon on the surface of the photoresist serving as a mask, removing the photoresist to obtain patterned polycrystalline silicon C, wherein the deposition thickness is 20-200nm, and the preferred deposition thickness is 100nm. As shown in FIG. 2 (c);
in the step (4) of the preparation method, the patterned polysilicon C is integrally doped, and the doping concentration needs to be 10 19 ～10 20 /cm 2 In the range of preferably 10 20 /cm 2 . The doping type is N-type or P-type, preferably N-type, forming a polysilicon electrode layer D. As shown in FIG. 2 (d);
in the step (5) of the preparation method, single-side photoetching is carried out on the surface of the monocrystalline silicon material substrate A and the surface structure thereof. Depositing a layer of metal titanium on the surface of the photoresist as a mask, depositing a layer of inert metal, removing the photoresist to obtain a patterned metal layer E, and finally forming the conductive metal layer 1, as shown in fig. 1, wherein the thickness of the metal layer is 20-50nm, preferably 50nm, the thickness of the inert metal layer is gold or platinum, preferably platinum, and the deposition thickness is 100-500nm, preferably 100nm. As shown in FIG. 2 (e);
in the step (6) of the preparation method, a layer of monocrystalline silicon material is firstly deposited on the surface of the substrate A and the surface structure thereofSiO 2 A layer of silicon nitride (Si) is deposited 3 N 4 ) As a masking layer F, siO 2 Is deposited to a thickness of 50-400nm, preferably 300nm 3 N 4 Is deposited to a thickness of 50-400nm, preferably 200nm. As shown in FIG. 2 (f);
in step (7) of the preparation method, performing double-sided lithography and dry etching processes on the mask layer F to obtain a patterned etching window, then placing the monocrystalline silicon material substrate a into a corrosive liquid for etching processing, and strictly controlling the etching time to form a back etching window G, the outline shape of the tool electrode and a positioning groove 301 on the silicon substrate 3, as shown in fig. 2 (G); the adopted corrosive liquid component is KOH, and the concentration of the KOH is 20 percent to 50 percent, preferably 20 percent. The corrosion temperature is 50 to 100 ℃, preferably 80 ℃. A small amount of isopropyl alcohol (IPA) may be added in an amount of less than 2%. The etching solution component may also be TMAH, with a concentration of 10% to 40%, preferably 25%. The corrosion temperature is 50 to 100 ℃, preferably 80 ℃. The step can also be realized by adopting inductively coupled plasma etching, and the formed etching profile is different from that of the step shown in fig. 2 (g) (the etching profile obtained by ICP etching is a straight wall surface, and the size of the etching profile is the same as that of the etching profile), so that the same effect can be achieved.
In step (8) of the manufacturing method, the masking layer F is removed, and photolithography is performed on the surface of the polysilicon electrode layer D. Taking the photoresist as a mask, etching between the two opposite polysilicon electrodes 2, and separating the two electrodes, as shown in fig. 2 (h); in step (9) of the production method, in step S9, siO is removed with hydrofluoric acid 2 And patterning the sacrificial layer B to expose the silicon material substrate and the surface of the metal layer. As shown in fig. 2 (i).
In step (10) of the preparation method, the prepared tool electrode is detached from the single crystal silicon substrate, and the disconnection manner may be manual breaking or high-frequency pulse laser cutting to form the silicon substrate 3, as shown in fig. 2 (j).
One embodiment of the present invention is described below, which aims to produce a nano-scale polysilicon tool electrode with a characteristic dimension of 100nm. The method mainly comprises the following steps:
1. selecting a (100) crystal face silicon wafer with the thickness of 200 mu m.
2. And depositing a layer of silicon dioxide with the thickness of 100nm on the silicon wafer by adopting a deposition process, and then carrying out photoetching and etching once until the silicon material substrate is exposed to obtain a patterned silicon dioxide layer serving as a patterned sacrificial layer.
3. And carrying out single-side photoetching on the surfaces of the silicon wafer and the patterned sacrificial layer B. Depositing a layer of polycrystalline silicon on the surface of the polycrystalline silicon, and removing glue to obtain a patterned polycrystalline silicon layer C with the thickness of 100 nm;
4. wholly doping the patterned polysilicon layer C with a doping concentration of 10 20 /cm 2 Forming a polycrystalline silicon electrode layer D in an N type;
5. and performing single-side photoetching on the surface of the polycrystalline silicon electrode layer D. Depositing a layer of gold with the thickness of 100nm on the surface of the photoresist serving as a mask, and removing the photoresist to obtain a graphical gold layer;
6. a silicon dioxide layer with the thickness of 300nm is deposited on the surface of the silicon wafer substrate, and a silicon nitride layer with the thickness of 200nm is deposited to be used as a masking layer F;
7. and then, placing the silicon material substrate into a corrosive liquid for etching, and strictly controlling the etching time to form the outline shapes of the back etching window and the tool electrode, wherein the corrosive liquid can also be TMAH, and the concentration of the corrosive liquid is 25%. The corrosion temperature was 80 ℃.
8. And removing the masking layer F, and performing single-side photoetching on the surface of the polycrystalline silicon electrode layer D. Etching between two opposite silicon electrodes by taking the photoresist as a mask, and separating the two silicon electrodes;
9. SiO removal by hydrofluoric acid 2 And patterning the sacrificial layer B to expose the silicon material substrate and the surface of the metal layer.
10. And separating the prepared tool electrode from the monocrystalline silicon substrate by using a laser cutting machine.

Claims (10)

1. A nanometer polycrystalline silicon tool electrode for electrolytic machining is characterized by comprising a silicon substrate, a conductive metal layer and a polycrystalline silicon cathode; the front part of the conductive metal layer is connected with the rear part of the polycrystalline silicon cathode, and the rear part of the conductive metal layer is positioned on the silicon substrate; the front end part of the polycrystalline silicon cathode is an electrode working end, and the rear part of the polycrystalline silicon cathode is mutually connected with the front part of the silicon substrate through the substrate adhesion layer; the back of the silicon substrate is provided with a positioning groove for clamping and positioning the tool electrode and other workpieces when the polysilicon tool electrode is in a working state,
the polycrystalline silicon cathode is made of a high-concentration doped polycrystalline silicon material, the size of the polycrystalline silicon cathode on the surface of the monocrystalline silicon substrate is millimeter level, the polycrystalline silicon cathode is connected with the conductive metal layer, and the characteristic size of the electrode working end of the polycrystalline silicon cathode is nanometer level.
2. The tool electrode of claim 1, wherein the polysilicon cathode comprises a substrate adhesion layer and the electrode working end are both made of heavily doped polysilicon material, the heavily doped dopant element is phosphorus or boron, and the polysilicon cathode has a conductivity of less than 10% -2 Ωcm。
3. The tool electrode of claim 1, wherein the conductive metal layer is a patterned film formed by a metal lift-off process and a metal deposition process, and the metal species is silver, platinum, or gold.
4. A tool electrode according to claim 3, wherein the metal species is platinum.
5. A method of preparing a nano-scale polycrystalline silicon tool electrode for electrochemical machining according to any one of claims 1 to 4, characterized by comprising the steps of:
(1) Providing a monocrystalline silicon material substrate;
(2) Preparing a patterned sacrificial layer on a monocrystalline silicon material substrate;
(3) Depositing a graphical polycrystalline silicon layer on the monocrystalline silicon material substrate and the graphical sacrificial layer in the step (1);
(4) Carrying out high-concentration doping on the graphical polycrystalline silicon layer obtained in the step (3) to obtain a polycrystalline silicon electrode layer;
(5) Etching the polycrystalline silicon electrode layer obtained in the step (4), and depositing a metal layer on the surface of the etched polycrystalline silicon to obtain a metal layer;
(6) Respectively depositing a layer of masking layer on the bottom surface and the top surface of the monocrystalline silicon material substrate in the step (5);
(7) Etching the masking layers on the bottom surface and the top surface of the monocrystalline silicon material substrate obtained in the step (6) to obtain a patterned etching window, then etching a thinning window and a positioning groove on the bottom surface of the monocrystalline silicon material substrate, and etching a basic outline of the tool electrode on the top surface of the monocrystalline silicon material substrate;
(8) Etching the middle point of the patterned polycrystalline silicon layer in the step (7);
(9) Performing a wet etching process on the patterned sacrificial layer in the tool electrode in the step (8) to remove the patterned sacrificial layer;
(10) And (5) at the funnel-shaped groove in the step (8), breaking the monocrystalline silicon material substrate according to the profile of the tool electrode, so that the tool electrode is separated from the monocrystalline silicon material substrate, and obtaining an independent tool electrode.
6. The preparation method according to claim 5, characterized in that in the step (2), a layer of silicon dioxide is deposited on the monocrystalline silicon material substrate by a deposition process, wherein the thickness of the silicon dioxide is 10-500nm, and a patterned sacrificial layer is obtained; performing one-time photoetching on the patterned sacrificial layer by adopting an etching process to remove SiO 2 Until the monocrystalline silicon material base is exposed.
7. The preparation method according to claim 5, wherein the specific process of step (3) is: and (3) taking the photoresist as a mask, depositing a layer of polycrystalline silicon on the monocrystalline silicon material substrate and the patterned sacrificial layer obtained in the step (2), and removing the photoresist to obtain a patterned polycrystalline silicon layer, wherein the thickness of the patterned polycrystalline silicon layer is 20-200 nm.
8. The method of claim 5, wherein in step (4), the patterned polysilicon layer is entirely doped to a doping concentration of 10 19 ～10 20 /cm 2 Within the range, the doping type is N type or P type, and a polysilicon electrode layer is formed.
9. The preparation method according to claim 5, wherein the specific process of step (5) is: and depositing a metal layer on the surface of the polycrystalline silicon electrode layer by taking the photoresist as a mask, removing the photoresist to obtain a patterned metal layer, wherein the material of the metal layer is inert metal, and the thickness of the deposited metal layer is 100-500 nm.
10. The production method according to claim 5, characterized in that in the step (9), the masking layer is removed, single-sided lithography is performed on the surface of the polysilicon electrode layer, and etching is performed between two opposed silicon electrodes with the photoresist as a mask to separate them.
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