CN113644895A - Film bulk acoustic resonator filter and filter assembly - Google Patents
Film bulk acoustic resonator filter and filter assembly Download PDFInfo
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/564—Monolithic crystal filters implemented with thin-film techniques
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/566—Electric coupling means therefor
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/582—Multiple crystal filters implemented with thin-film techniques
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/60—Electric coupling means therefor
Abstract
The invention relates to the technical field of filters, and provides a film bulk acoustic resonator filter and a filter component, which comprise an input terminal, an output terminal, a plurality of film bulk acoustic resonators connected in series and a plurality of film bulk acoustic resonators connected in parallel; the plurality of series thin film bulk acoustic resonators include a first thin film bulk acoustic resonator to a fourth thin film bulk acoustic resonator, and are connected in series between an input terminal and an output terminal; the plurality of film bulk acoustic resonators connected in parallel comprise a fifth film bulk acoustic resonator, a sixth film bulk acoustic resonator and a seventh film bulk acoustic resonator, one end of the fifth film bulk acoustic resonator, one end of the sixth film bulk acoustic resonator and one end of the seventh film bulk acoustic resonator are respectively connected to a node between two adjacent film bulk acoustic resonators in the plurality of film bulk acoustic resonators connected in series, and the other end of the fifth film bulk acoustic resonator, one end of the sixth film bulk acoustic resonator and one end of the seventh film bulk acoustic resonator are respectively connected to a grounding terminal. The filter may allow signals of a particular frequency to pass through.
Description
Technical Field
The invention belongs to the technical field of filters, and particularly relates to a film bulk acoustic resonator filter and a filter assembly.
Background
In recent years, with the continuous development of 5G wireless communication technology, mobile communication is realized by utilizing higher frequency bands and frequency band recombination, which puts increasing demands on miniaturization, high frequency bandwidth, integration and flexibility of relevant radio frequency components.
Film Bulk Acoustic Resonator (FBAR) filters are gradually replacing traditional surface Acoustic wave filters and ceramic filters by virtue of their excellent characteristics of small size, high resonant frequency, high quality factor, large power capacity, good roll-off effect and the like, and have a larger and larger market share in the field of radio frequency filters, and play a great role in the field of 5G wireless communication radio frequencies.
However, most of the research on the film bulk acoustic resonator filter is focused on the manufacturing method, and the research on the specific structure of the film bulk acoustic resonator filter is less.
Disclosure of Invention
The embodiment of the invention provides a film bulk acoustic resonator filter and a filter component, aiming at providing a novel structure of the film bulk acoustic resonator filter.
In a first aspect, an embodiment of the present invention provides a film bulk acoustic resonator filter with a center frequency of 1805MHz, including an input terminal, an output terminal, a plurality of series connected film bulk acoustic resonators, and a plurality of parallel connected film bulk acoustic resonators;
the plurality of series thin film bulk acoustic resonators comprise a first thin film bulk acoustic resonator, a second thin film bulk acoustic resonator, a third thin film bulk acoustic resonator and a fourth thin film bulk acoustic resonator which are connected in series between an input terminal and an output terminal;
the plurality of film bulk acoustic resonators connected in parallel comprise a fifth film bulk acoustic resonator, a sixth film bulk acoustic resonator and a seventh film bulk acoustic resonator, and one end of the fifth film bulk acoustic resonator, one end of the sixth film bulk acoustic resonator and one end of the seventh film bulk acoustic resonator are respectively connected to a node between two adjacent film bulk acoustic resonators in the plurality of film bulk acoustic resonators connected in series; the other ends of the fifth film bulk acoustic resonator, the sixth film bulk acoustic resonator and the seventh film bulk acoustic resonator are respectively connected with a grounding terminal;
the film bulk acoustic resonators connected in parallel also comprise a first parallel arm resonator, a second parallel arm resonator and a third parallel arm resonator; the first parallel-arm resonator includes a fifth film bulk acoustic resonator, the second parallel-arm resonator includes a sixth film bulk acoustic resonator, and the third parallel-arm resonator includes a seventh film bulk acoustic resonator.
The filter in the embodiment of the present invention includes a plurality of thin film bulk acoustic resonators connected in series between an input terminal and an output terminal, and a plurality of thin film bulk acoustic resonators connected in parallel between nodes of the plurality of thin film bulk acoustic resonators connected in series. The signal passing input terminal can allow the signal with specific frequency to pass after passing through the plurality of thin film bulk acoustic resonators connected in series and the plurality of thin film bulk acoustic resonators connected in parallel.
With reference to the first aspect, in one possible implementation manner, the series resonance frequency and the parallel resonance frequency of the plurality of series thin film bulk acoustic resonators are the same; the series resonance frequency and the parallel resonance frequency of the film bulk acoustic resonators connected in parallel are the same.
With reference to the first aspect, in one possible implementation manner, the series resonance frequency of the plurality of series thin film bulk acoustic resonators is the same as the parallel resonance frequency of the plurality of parallel thin film bulk acoustic resonators.
With reference to the first aspect, in one possible implementation manner, the area of the first film bulk acoustic resonator is 21300 μm2-21500μm2The second film bulk acoustic resonator has an area of 10700 μm2-10900μm2The third film bulk acoustic resonator has an area of 10100 mu m2-10300μm2The fourth film bulk acoustic resonator has an area of 25200 μm2-25400μm2The fifth film bulk acoustic resonator has an area of 29500 μm2-29700μm2The sixth film bulk acoustic resonator has an area of 37000 mu m2-37200μm2And the seventh film bulk acoustic resonator has an area of 23400 mu m2-23600μm2。
With reference to the first aspect, in a possible implementation manner, the film bulk acoustic resonator filter includes a piezoelectric layer, a layout of the film bulk acoustic resonator filter mainly includes a sacrificial layer, a lower electrode layer, an upper electrode layer, a difference frequency layer, and a pore layer, the difference frequency layer corresponds to a plurality of film bulk acoustic resonators connected in parallel, and the plurality of film bulk acoustic resonators connected in series do not have the difference frequency layer; a plurality of release holes are formed in the hole layer, each film bulk acoustic resonator is provided with a plurality of release channels, and each release channel corresponds to at least one release hole.
In this embodiment, the upper electrode layer and the lower electrode layer are both thick
The thickness of the piezoelectric layer is
The thickness of the difference frequency layer is
The diameter of the release hole is 15-25 μm.
In some embodiments, the distance between the center of the first to fourth film bulk acoustic resonators and the straight line on which the input terminal and the output terminal are located is less than a threshold value, the fifth and seventh film bulk acoustic resonators are located on a first side of the straight line, and the sixth film bulk acoustic resonator is located on a second side of the straight line.
In some embodiments, the distance from the center of the first film bulk acoustic resonator, the second film bulk acoustic resonator, the third film bulk acoustic resonator and the fourth film bulk acoustic resonator to the first straight line where the input end and the output end are located is less than a threshold;
the central connecting lines of the first film bulk acoustic resonator, the second film bulk acoustic resonator and the fifth film bulk acoustic resonator form a first V shape, the central connecting lines of the third film bulk acoustic resonator, the fourth film bulk acoustic resonator and the seventh film bulk acoustic resonator form a second V shape, and the central connecting lines of the second film bulk acoustic resonator, the third film bulk acoustic resonator and the sixth film bulk acoustic resonator form a third V shape;
the angles of the first V-shaped part and the second V-shaped part are both smaller than 90 degrees, and the opening directions of the first V-shaped part and the second V-shaped part face to the first side of the straight line; the angle of the third V-shaped sum is larger than 90 degrees, and the opening direction of the third V-shaped sum faces to the second side of the straight line.
Illustratively, the layout of the filter includes first to twelfth layout areas;
the first layout area, the third layout area and the fourth layout area are grounding terminal layout areas, the second layout area is an input terminal layout area, the fifth layout area is an output terminal layout area, the first layout area is positioned at the lower part of the layout of the filter, and the second layout area, the fifth layout area, the third layout area and the fourth layout area are respectively and symmetrically arranged at two sides of the layout of the filter;
the sixth layout area, the seventh layout area, the eighth layout area and the ninth layout area are respectively layout areas of the first film bulk acoustic resonator, the second film bulk acoustic resonator, the third film bulk acoustic resonator and the fourth film bulk acoustic resonator; the sixth layout area, the seventh layout area, the eighth layout area and the ninth layout area are respectively connected in series between the second layout area and the fifth layout area;
the tenth layout area, the eleventh layout area and the twelfth layout area are respectively layout areas of a fifth film bulk acoustic resonator, a sixth film bulk acoustic resonator and a seventh film bulk acoustic resonator;
the eleventh layout area is positioned at the lower part of the seventh layout area, one end of the eleventh layout area is respectively connected with the seventh layout area and the eighth layout area, and the other end of the eleventh layout area is connected with the first layout area;
the tenth layout area is positioned at the upper part of the sixth layout area, one end of the tenth layout area is respectively connected with the sixth layout area and the seventh layout area, and the other end of the tenth layout area is connected with the third layout area;
the twelfth layout area is positioned at the upper part of the eighth layout area, one end of the twelfth layout area is respectively connected with the eighth layout area and the ninth layout area, and the other end of the twelfth layout area is connected with the fourth layout area.
In a second aspect, an embodiment of the present invention further provides a thin film bulk acoustic resonator filter assembly, including any one of the thin film bulk acoustic resonator filters described above.
Drawings
Fig. 1 is a schematic circuit diagram of a film bulk acoustic resonator filter according to an embodiment of the present invention;
fig. 2 is a schematic diagram of a layout structure of a film bulk acoustic resonator filter according to an embodiment of the present invention;
fig. 3 is a schematic layout diagram of a sacrificial layer of the thin film bulk acoustic resonator filter shown in fig. 2;
fig. 4 is a layout diagram of a lower electrode layer of the thin film bulk acoustic resonator filter shown in fig. 2;
fig. 5 is a layout diagram of an upper electrode layer of the thin film bulk acoustic resonator filter shown in fig. 2;
FIG. 6 is a layout diagram of a difference frequency layer of the film bulk acoustic resonator filter shown in FIG. 2;
fig. 7 is a layout diagram of an aperture layer of the thin film bulk acoustic resonator filter shown in fig. 2;
fig. 8 is an amplitude-frequency characteristic curve of the filter of the film bulk acoustic resonator according to the embodiment of the present invention.
In the figure: 11-input terminal, 12-output terminal, X1-first film bulk acoustic resonator, X2-second film bulk acoustic resonator, X3-third film bulk acoustic resonator, X4-fourth film bulk acoustic resonator, X5-fifth film bulk acoustic resonator, X6-sixth film bulk acoustic resonator, X7-seventh film bulk acoustic resonator, 41-release hole.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Film Bulk Acoustic Resonator (FBAR) filters are gradually replacing traditional Surface Acoustic Wave (SAW) filters and ceramic filters, and play a great role in the field of radio frequency of wireless communication. However, most of the existing research on the FBAR filter focuses on the preparation method, and the research on the specific structure is less. In certain engineering application, a filter with the center frequency of 1805MHz needs to be used, the 1dB bandwidth of the filter is more than 30MHz, and the suppression for positions of 1750MHz and 1860MHz is more than 45 dBc.
Based on the above problems, embodiments of the present invention provide a film bulk acoustic resonator filter. The filter includes: the array antenna comprises an input terminal, an output terminal, a plurality of thin film bulk acoustic resonators connected in series and a plurality of thin film bulk acoustic resonators connected in parallel. The plurality of series thin film bulk acoustic resonators include a first thin film bulk acoustic resonator, a second thin film bulk acoustic resonator, a third thin film bulk acoustic resonator and a fourth thin film bulk acoustic resonator, and are connected in series between an input terminal and an output terminal. The plurality of film bulk acoustic resonators connected in parallel comprise a fifth film bulk acoustic resonator, a sixth film bulk acoustic resonator and a seventh film bulk acoustic resonator, one end of the fifth film bulk acoustic resonator, one end of the sixth film bulk acoustic resonator and one end of the seventh film bulk acoustic resonator are respectively connected to a node between two adjacent film bulk acoustic resonators in the plurality of film bulk acoustic resonators connected in series, and the other end of the fifth film bulk acoustic resonator, the other end of the sixth film bulk acoustic resonator and the other end of the seventh film bulk acoustic resonator are respectively connected with a grounding terminal.
The film bulk acoustic resonator filter includes a plurality of film bulk acoustic resonators connected in series between an input terminal and an output terminal, and a plurality of film bulk acoustic resonators connected in parallel between nodes of the plurality of film bulk acoustic resonators connected in series. When the signals pass through the input terminal and pass through the plurality of thin film bulk acoustic resonators connected in series and the plurality of thin film bulk acoustic resonators connected in parallel, filtering of the signals in a specific frequency band can be realized, and therefore the signals with specific central frequency are output.
Fig. 1 shows a schematic circuit diagram of a film bulk acoustic resonator filter according to an embodiment of the present invention. Referring to fig. 1, the film bulk acoustic resonator filter includes an input terminal 11, an output terminal 12, a plurality of series film bulk acoustic resonators, and a plurality of parallel film bulk acoustic resonators. The plurality of series thin film bulk acoustic resonators include a first thin film bulk acoustic resonator X1, a second thin film bulk acoustic resonator X2, a third thin film bulk acoustic resonator X3 and a fourth thin film bulk acoustic resonator X4. The plurality of film bulk acoustic resonators connected in parallel include a fifth film bulk acoustic resonator X5, a sixth film bulk acoustic resonator X6, and a seventh film bulk acoustic resonator X7.
The plurality of film bulk acoustic resonators connected in parallel are divided into three parallel-arm resonators, namely a first parallel-arm resonator, a second parallel-arm resonator and a third parallel-arm resonator. The first parallel-arm resonator includes a fifth thin film bulk acoustic resonator X5, the second parallel-arm resonator includes a sixth thin film bulk acoustic resonator X6, and the third parallel-arm resonator includes a seventh thin film bulk acoustic resonator X7.
Specifically, the first thin film bulk acoustic resonator X1, the second thin film bulk acoustic resonator X2, the third thin film bulk acoustic resonator X3, and the fourth thin film bulk acoustic resonator X4 are connected in series between the input terminal 11 and the output terminal 12. And the first to fourth thin film bulk acoustic resonators X1 to X4 have the same first series resonance frequency and first parallel resonance frequency.
One end of the fifth thin film bulk acoustic resonator X5 is connected to a node between the first thin film bulk acoustic resonator X1 and the second thin film bulk acoustic resonator X2, and the other end is connected to a ground terminal. One end of the sixth thin film bulk acoustic resonator X6 is connected to a node between the second thin film bulk acoustic resonator X2 and the third thin film bulk acoustic resonator X3, and the other end may be directly connected to a ground terminal. One end of the seventh thin film bulk acoustic resonator X7 is connected to a node between the third thin film bulk acoustic resonator X3 and the fourth thin film bulk acoustic resonator X4, and the other end may be directly connected to a ground terminal. The fifth to seventh thin film bulk acoustic resonators X5 to X7 described above have the same second series resonance frequency and second parallel resonance frequency.
Illustratively, in the embodiment of the present invention, the first series resonance frequency of the plurality of series thin film bulk acoustic resonators is the same as the second parallel resonance frequency of the plurality of parallel thin film bulk acoustic resonators, so as to form a specific center frequency.
In some embodiments, the area of the film bulk acoustic resonator should be controlled to 4000 μm in consideration of the easiness of process implementation2-80000μm2In the meantime. In the same circuit, the area difference of each film bulk acoustic resonator in the circuit should be as small as possible in the design of each film bulk acoustic resonator, and the difference is generally less than 4 times.
In some embodiments, the first film bulk acoustic resonator may be tuned to obtain a particular center frequency of the film bulk acoustic resonator filterThe area and position of the X1 through seventh film bulk acoustic resonator 34. Specifically, the area of the first film bulk acoustic resonator may be set to 21300 μm2-21500μm2The second film bulk acoustic resonator has an area of 10700 μm2-10900μm2The third film bulk acoustic resonator has an area of 10100 mu m2-10300μm2The fourth film bulk acoustic resonator has an area of 25200 μm2-25400μm2The fifth film bulk acoustic resonator has an area of 29500 μm2-29700μm2The sixth film bulk acoustic resonator has an area of 37000 mu m2-37200μm2And the seventh film bulk acoustic resonator has an area of 23400 mu m2-23600μm2. The area of the resonator is the overlapping area of the upper electrode and the lower electrode of the parallel plate capacitor of the resonator.
In some embodiments, the film bulk acoustic resonator filter includes a piezoelectric layer, and the layout of the film bulk acoustic resonator filter mainly includes a sacrificial layer, a lower electrode layer, an upper electrode layer, a difference frequency layer, and an aperture layer. The difference frequency layer corresponds to the plurality of film bulk acoustic resonators connected in parallel, and the plurality of film bulk acoustic resonators connected in series do not have the difference frequency layer. The difference frequency layer is used for realizing the frequency difference between the film bulk acoustic resonators connected in parallel and the film bulk acoustic resonators connected in series, so that a filter is formed, and the filtering of the phase specific frequency is realized. In general, the second series resonance frequency and the second parallel resonance frequency of the thin film bulk acoustic resonators connected in parallel are lower than the first series resonance frequency and the first parallel resonance frequency of the thin film bulk acoustic resonators connected in series, and the first series resonance frequency is equal to the second parallel resonance frequency.
In order to form an air cavity of the film bulk acoustic resonator and realize the reflection of acoustic waves, an orifice layer is specially arranged, a plurality of release holes are arranged in the orifice layer, and each release channel of each film bulk acoustic resonator corresponds to at least one release hole.
For example, each resonator may have a plurality of release channels (e.g., five), one release hole for each release channel, and release gas may enter the release channels through the release holes, then enter the sacrificial layer region to etch the sacrificial layer material away into gas, and then be exhausted through the release channels and the release holes. In addition, if the space of the filter is tight, two release channels can share one release hole. In addition, in the probe test area, a probe (for example, a GSG probe) needs to be used to test the chip, so that the piezoelectric layer needs to be etched away, and the lower electrode needs to be exposed for testing.
In some embodiments, the filter for a particular center frequency can be achieved by adjusting the thickness of the upper electrode, the lower electrode, and the piezoelectric layer.
Illustratively, to obtain a filter with a center frequency of 1805MHz, the upper electrode layer and the lower electrode layer are both thick
The thickness of the piezoelectric layer is
In some embodiments, the difference frequency layer may have a thickness of
In some embodiments, the release holes may be 15 μm to 25 μm in diameter.
The total layout of the film bulk acoustic resonator filter with the center frequency of 1805MHz is provided in the embodiment of the invention and is shown in FIG. 2. The total layout of the filter in fig. 2 includes first to twelfth layout areas. The first layout area 401, the third layout area 403 and the fourth layout area 404 are ground terminal layout areas, the second layout area 402 is an input terminal layout area, the fifth layout area 405 is an output terminal layout area, the first layout area 401 is located at the lower part of the layout of the filter, and the second layout area 402, the fifth layout area 405, the third layout area 403 and the fourth layout area 404 are respectively and symmetrically arranged at two sides of the layout of the filter.
A sixth layout area 406, a seventh layout area 407, an eighth layout area 408, and a ninth layout area 409 are respectively layout areas of the first thin film bulk acoustic resonator X1, the second thin film bulk acoustic resonator X2, the third thin film bulk acoustic resonator X3, and the fourth thin film bulk acoustic resonator X4; the sixth, seventh, eighth and ninth version areas 406, 407, 408 and 409 are connected in series between the second and fifth version areas 402 and 405, respectively. The first to fourth thin film bulk acoustic resonators X1 to X4 are connected in series substantially linearly between the input terminal and the output terminal.
The tenth layout area 410, the eleventh layout area 411, and the twelfth layout area 412 are layout areas of the fifth thin film bulk acoustic resonator X5, the sixth thin film bulk acoustic resonator X6, and the seventh thin film bulk acoustic resonator X7, respectively. The fifth film bulk acoustic resonator X5 and the seventh film bulk acoustic resonator X7 are located on the first side of the straight line, and the sixth film bulk acoustic resonator X6 is located on the second side of the straight line.
In some embodiments, the distance from the center of the first thin film bulk acoustic resonator X1, the second thin film bulk acoustic resonator X2, the third thin film bulk acoustic resonator X3, and the fourth thin film bulk acoustic resonator X4 to a first straight line from the input end to the output end is less than a threshold, the resonator 31 and the resonator 33 are located on a first side of the first straight line, the resonator 32 is located on a second side of the first straight line, and the first side is opposite to the second side.
The central connecting lines of the first thin film bulk acoustic resonator X1, the second thin film bulk acoustic resonator X2 and the fifth thin film bulk acoustic resonator X5 form a first V shape, the central connecting lines of the third thin film bulk acoustic resonator X3, the fourth thin film bulk acoustic resonator X4 and the seventh thin film bulk acoustic resonator X7 form a second V shape, and the central connecting lines of the second thin film bulk acoustic resonator X2, the third thin film bulk acoustic resonator and the sixth thin film bulk acoustic resonator X6 form a third V shape.
The angles of the first V-shaped part and the second V-shaped part are both smaller than 90 degrees, and the opening directions of the first V-shaped part and the second V-shaped part face to the first side of the straight line; the angle of the third V-shape is larger than 90 degrees, and the opening direction of the third V-shape faces to the second side of the straight line.
Specifically, referring to fig. 1 and 2, the first V-shape is composed of a sixth layout area 406, a seventh layout area 407, and a tenth layout area 410, the second V-shape is composed of an eighth layout area 408, a ninth layout area 409, and a twelfth layout area 412, and the seventh layout area 407, the ninth layout area 409, and the eleventh layout area 411.
For example: the distances between the centers of the first to fourth thin film bulk acoustic resonators X1 to X4 and the dot-dash line where the input terminal 11 and the output terminal 12 are located (the dot-dash line between the second layout area 402 and the fifth layout area 405 as shown in fig. 2) are smaller than a threshold value, where the threshold value may be the size of one-half resonator or the size of one-quarter resonator. Wherein the size of the resonator is the largest size of the resonator in the direction perpendicular to the above-mentioned straight line in the sacrificial layer layout when the resonator is manufactured.
Specifically, the layout to be used in the process of manufacturing the 1805MHz film bulk acoustic resonator filter mainly includes the layout of the sacrificial layer, the layout of the lower electrode, the layout of the upper electrode, the layout of the difference frequency layer, and the layout of the hole layer, as shown in fig. 3 to 7.
Fig. 3 is a layout of a sacrificial layer, in which a first thin film bulk acoustic resonator X1 to a seventh thin film bulk acoustic resonator X7 are respectively disposed. The first sacrificial patterning area 501, the second sacrificial patterning area 502, the third sacrificial patterning area 503 and the fourth sacrificial patterning area 504 are sacrificial layer patterning areas of a first film bulk acoustic resonator X1, a second film bulk acoustic resonator X2, a third film bulk acoustic resonator X3 and a fourth film bulk acoustic resonator X4, respectively. The fifth sacrificial pattern area 505, the sixth sacrificial pattern area 506, and the seventh sacrificial pattern area 507 are sacrificial layer pattern areas of a fifth thin film bulk acoustic resonator X5, a sixth thin film bulk acoustic resonator X6, and a seventh thin film bulk acoustic resonator X7, respectively.
Wherein each resonator is provided with 5 sides, and the resonators are connected with each other through one side. And the horn-like portion from which each resonator extends is a release channel, each resonator may have a plurality of release channels, in this case 5 release channels per resonator. The released gas enters the release channel through the release hole, then enters the sacrificial layer to corrode the sacrificial layer material to become gas, and then is discharged through the release channel and the release hole.
Fig. 4 is a layout of the lower electrode layer, including a layout of the input terminal 11, the output terminal 12, and the ground terminal. The lower electrode layer includes a first lower electrode layout area 601, a second lower electrode layout area 602, a third lower electrode layout area 603, a fourth lower electrode layout area 604, a fifth lower electrode layout area 605, and a sixth lower electrode layout area 606. Wherein the first lower electrode layout area 601, the third lower electrode layout area 603, and the fourth lower electrode layout area 604 are connected to a ground terminal. The second lower electrode layout area 602 is connected to the input terminal 11, and the fifth lower electrode layout area 605 is connected to the output terminal 12.
The first lower electrode layout area 601 corresponds to a ground terminal, the second lower electrode layout area 602 corresponds to a first thin film bulk acoustic resonator X1, the third lower electrode layout area 603 corresponds to a fifth thin film bulk acoustic resonator X5, the fourth lower electrode layout area 604 corresponds to a seventh thin film bulk acoustic resonator X7, the fifth lower electrode layout area 605 corresponds to a fourth thin film bulk acoustic resonator X4, and the sixth lower electrode layout area 604 corresponds to a second thin film bulk acoustic resonator X2, a third thin film bulk acoustic resonator X3, and a sixth thin film bulk acoustic resonator X6.
Fig. 5 is a layout of the upper electrode layer, which includes a first upper electrode layout area 701, a second upper electrode layout area 702, and a third upper electrode layout area 703. The first upper electrode layout area 701 corresponds to a sixth film bulk acoustic resonator X6, the second upper electrode layout area 702 corresponds to a first film bulk acoustic resonator X1, a second film bulk acoustic resonator X2 and a fifth film bulk acoustic resonator X5, and the third upper electrode layout area 703 corresponds to a third film bulk acoustic resonator X3, a fourth film bulk acoustic resonator X4 and a seventh film bulk acoustic resonator X7.
Fig. 6 is a layout of a difference frequency layer, which includes a first difference frequency layout region 801 corresponding to the sixth thin film bulk acoustic resonator X6, a second difference frequency layout region 802 corresponding to the fifth thin film bulk acoustic resonator X5, and a third difference frequency layout region 803 corresponding to the seventh thin film bulk acoustic resonator X7.
Fig. 7 is a layout of an aperture layer that includes a plurality of release apertures 41, surrounding each resonator. One for each discharge hole 41. The released gas enters the release channels through the release holes 41 and then enters the sacrificial layer area to corrode the sacrificial layer material into gas, and then is discharged through the release channels and the release holes 41. In addition, in the probe test area on the hole layer layout, if a probe (for example, a GSG probe) is required to be used for testing the chip, the piezoelectric layer needs to be etched away, and the lower electrode GSG is exposed for testing.
In this embodiment, the 1805MHz film bulk acoustic resonator filter prepared as described above is tested, and the test result is shown in fig. 8. Curve 1 is the variation of S (2,1) with frequency (left vertical axis) of the film bulk acoustic resonator filter. Curve 2 is the return loss (right vertical axis) of S (1,1) of the thin film bulk acoustic resonator filter, and curve 3 is the return loss (right vertical axis) of S (2,2) of the thin film bulk acoustic resonator filter. As can be seen from FIG. 8, the 1dB bandwidth is about 40MHz, and the suppression levels are 53dBc and 51dBc at 1750MHz and 1860MHz, respectively.
The embodiment of the invention also provides a film bulk acoustic resonator filter component which comprises any film bulk acoustic resonator filter. All technical effects of the film bulk acoustic resonator filter are achieved, and are not described herein again.
The present invention is not limited to the above preferred embodiments, and any modifications, equivalent substitutions and improvements made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A film bulk acoustic resonator filter is characterized by comprising an input terminal, an output terminal, a plurality of film bulk acoustic resonators connected in series and a plurality of film bulk acoustic resonators connected in parallel;
the plurality of series thin film bulk acoustic resonators comprise a first thin film bulk acoustic resonator, a second thin film bulk acoustic resonator, a third thin film bulk acoustic resonator and a fourth thin film bulk acoustic resonator which are connected in series between the input terminal and the output terminal;
the plurality of film bulk acoustic resonators connected in parallel comprise a fifth film bulk acoustic resonator, a sixth film bulk acoustic resonator and a seventh film bulk acoustic resonator, and one end of each of the fifth film bulk acoustic resonator, the sixth film bulk acoustic resonator and the seventh film bulk acoustic resonator is respectively connected to a node between two adjacent film bulk acoustic resonators in the plurality of film bulk acoustic resonators connected in series; the other ends of the fifth film bulk acoustic resonator, the sixth film bulk acoustic resonator and the seventh film bulk acoustic resonator are respectively connected with a grounding terminal;
the plurality of thin film bulk acoustic resonators connected in parallel further comprise a first parallel-arm resonator, a second parallel-arm resonator and a third parallel-arm resonator; the first parallel-arm resonator includes the fifth thin film bulk acoustic resonator, the second parallel-arm resonator includes the sixth thin film bulk acoustic resonator, and the third parallel-arm resonator includes the seventh thin film bulk acoustic resonator.
2. The film bulk acoustic resonator filter of claim 1, wherein the series resonance frequency and the parallel resonance frequency of the plurality of series film bulk acoustic resonators are the same; the series resonance frequency and the parallel resonance frequency of the plurality of film bulk acoustic resonators connected in parallel are the same.
3. The film bulk acoustic resonator filter according to claim 1 or 2, wherein the series resonance frequency of the plurality of series film bulk acoustic resonators is the same as the parallel resonance frequency of the plurality of parallel film bulk acoustic resonators.
4. The film bulk acoustic resonator filter of claim 1, wherein the first film bulk acoustic resonator has an area of 21300 μm2-21500μm2The area of the second film bulk acoustic resonator is 10700 mu m2-10900μm2The third film bulk acoustic resonator has an area of 10100 mu m2-10300μm2The fourth film bulk acoustic resonator has an area of 25200 [ mu ] m2-25400μm2The area of the fifth film bulk acoustic resonator is 29500 mu m2-29700μm2The first mentionedThe area of the six film bulk acoustic resonator is 37000 mu m2-37200μm2The area of the seventh film bulk acoustic resonator is 23400 mu m2-23600μm2。
5. The film bulk acoustic resonator filter of claim 1, wherein the film bulk acoustic resonator filter comprises a piezoelectric layer, a layout of the film bulk acoustic resonator filter mainly comprises a sacrificial layer, a lower electrode layer, an upper electrode layer, a difference frequency layer and a hole layer, the difference frequency layer corresponds to the plurality of parallel film bulk acoustic resonators, and the plurality of series film bulk acoustic resonators do not have the difference frequency layer; the hole layer is provided with a plurality of release holes, each film bulk acoustic resonator is provided with a plurality of release channels, and each release channel at least corresponds to one release hole.
6. The film bulk acoustic resonator filter of claim 5, wherein the upper electrode layer and the lower electrode layer are each of a thickness
The thickness of the piezoelectric layer is
The thickness of the difference frequency layer is
The diameter of the release hole is 15-25 μm.
7. The film bulk acoustic resonator filter according to any one of claims 1 to 6, wherein the distance between the center of the first to fourth film bulk acoustic resonators and a straight line on which the input terminal and the output terminal are located is smaller than a threshold value, the fifth and seventh film bulk acoustic resonators are located on a first side of the straight line, and the sixth film bulk acoustic resonator is located on a second side of the straight line.
8. The film bulk acoustic resonator filter of claim 7, wherein a distance from a center of the first film bulk acoustic resonator, the second film bulk acoustic resonator, the third film bulk acoustic resonator, and the fourth film bulk acoustic resonator to a first straight line on which the input terminal and the output terminal are located is smaller than a threshold value;
the central connecting lines of the first thin film bulk acoustic resonator, the second thin film bulk acoustic resonator and the fifth thin film bulk acoustic resonator form a first V shape, the central connecting lines of the third thin film bulk acoustic resonator, the fourth thin film bulk acoustic resonator and the seventh thin film bulk acoustic resonator form a second V shape, and the central connecting lines of the second thin film bulk acoustic resonator, the third thin film bulk acoustic resonator and the sixth thin film bulk acoustic resonator form a third V shape;
the angles of the first V-shaped part and the second V-shaped part are both smaller than 90 degrees, and the opening directions of the first V-shaped part and the second V-shaped part face to the first side of the straight line; the angle of the third V-shape is larger than 90 degrees, and the opening direction of the third V-shape faces the second side of the straight line.
9. The film bulk acoustic resonator filter of claim 8, wherein the layout of the film bulk acoustic resonator filter includes first to twelfth layout areas;
the first layout area, the third layout area and the fourth layout area are grounding terminal layout areas, the second layout area is an input terminal layout area, the fifth layout area is an output terminal layout area, the first layout area is positioned at the lower part of the layout of the filter, and the second layout area, the fifth layout area, the third layout area and the fourth layout area are respectively and symmetrically arranged at two sides of the layout of the filter;
the sixth layout area, the seventh layout area, the eighth layout area and the ninth layout area are respectively layout areas of the first film bulk acoustic resonator, the second film bulk acoustic resonator, the third film bulk acoustic resonator and the fourth film bulk acoustic resonator; the sixth layout area, the seventh layout area, the eighth layout area and the ninth layout area are respectively connected in series between the second layout area and the fifth layout area;
the tenth layout area, the eleventh layout area and the twelfth layout area are respectively layout areas of the fifth film bulk acoustic resonator, the sixth film bulk acoustic resonator and the seventh film bulk acoustic resonator;
the eleventh layout area is positioned at the lower part of the seventh layout area, one end of the eleventh layout area is respectively connected with the seventh layout area and the eighth layout area, and the other end of the eleventh layout area is connected with the first layout area;
the tenth layout area is positioned at the upper part of the sixth layout area, one end of the tenth layout area is respectively connected with the sixth layout area and the seventh layout area, and the other end of the tenth layout area is connected with the third layout area;
the twelfth layout area is located at the upper part of the eighth layout area, one end of the twelfth layout area is connected with the eighth layout area and the ninth layout area respectively, and the other end of the twelfth layout area is connected with the fourth layout area.
10. A thin film bulk acoustic resonator filter assembly, comprising the thin film bulk acoustic resonator filter according to any one of claims 1 to 9.
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