CN113644549A - Electric pump laser and preparation method thereof - Google Patents
Electric pump laser and preparation method thereof Download PDFInfo
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- CN113644549A CN113644549A CN202110922192.1A CN202110922192A CN113644549A CN 113644549 A CN113644549 A CN 113644549A CN 202110922192 A CN202110922192 A CN 202110922192A CN 113644549 A CN113644549 A CN 113644549A
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- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0207—Substrates having a special shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2201—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure in a specific crystallographic orientation
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Abstract
The invention provides an electric pump laser, comprising: the device comprises a lower metal electrode, a patterned substrate, an inverted ridge waveguide III-V family submicron structure, a passivation layer, a benzocyclobutene layer and an upper metal electrode; the lower metal electrode is positioned on the upper surface or the lower surface of the patterned substrate; the patterned substrate comprises a patterned silicon layer and a patterned silicon dioxide layer, at least one communicating groove is arranged on the patterned substrate, and the communicating groove comprises a rectangular groove and a V-shaped groove; the reverse ridge type waveguide III-V family submicron structure is arranged in the communicating groove and on the communicating groove; the passivation layer is arranged on two sides of the inverted ridge waveguide III-V family submicron structure on the communicating groove and on the upper surface of the patterned substrate; the benzocyclobutene layer is arranged on one side of the passivation layer; the top end of the benzocyclobutene layer, the top end of the passivation layer and the top end of the reverse ridge type waveguide III-V family submicron structure are equal in height; and the upper metal electrode is arranged on the inverted ridge type waveguide III-V group submicron structure.
Description
Technical Field
The invention relates to the technical field of photoelectron, in particular to an electric pump laser beneficial to large-scale silicon-based integration and a preparation method thereof.
Background
At the present stage, a selective area epitaxy mode combining a high depth-to-width ratio and a V-shaped silicon groove is adopted, and then a high-quality III-V material is epitaxially grown on an SOI substrate to realize laser induced lasing.
In implementing the disclosed concept, the inventors found that there are at least the following problems in the related art: the leakage loss of the substrate needs to be controlled by etching the substrate silicon; the introduction of an electrical level results in absorption losses.
Disclosure of Invention
To overcome at least some of the above problems, according to a first aspect of the present disclosure, there is provided an electrically pumped laser comprising
The device comprises a lower metal electrode, a patterned substrate, an inverted ridge waveguide III-V family submicron structure, a passivation layer, a benzocyclobutene layer and an upper metal electrode;
the lower metal electrode is positioned on the upper surface or the lower surface of the patterned substrate;
the patterned substrate comprises a patterned silicon layer and a patterned silicon dioxide layer, at least one communicating groove is arranged on the patterned substrate, and the communicating groove comprises a rectangular groove and a V-shaped groove;
the inverted ridge waveguide III-V family submicron structure is arranged in the communication groove and on the communication groove;
the passivation layer is arranged on two sides of the inverted ridge waveguide III-V family submicron structure on the communication groove and on the upper surface of the patterned substrate;
the benzocyclobutene layer is arranged on one side of the passivation layer;
the top end of the benzocyclobutene layer, the top end of the passivation layer and the top end of the reverse ridge waveguide III-V family submicron structure are equal in height;
the upper metal electrode is arranged on the inverted ridge type waveguide III-V family submicron structure.
According to the embodiment of the disclosure, the patterned substrate is an SOI substrate with a silicon dioxide masking layer on the upper surface, the V-shaped trench is arranged on an SOI substrate silicon layer of the SOI substrate, the rectangular trench is arranged on an SOI box layer of the SOI substrate and the silicon dioxide masking layer, and the lower metal electrode is arranged on the lower surface of the SOI substrate silicon layer.
According to the embodiment of the disclosure, the patterned substrate is an SOI substrate with a silicon dioxide dielectric layer on the upper surface, the V-shaped trench is arranged on an SOI top silicon layer of the SOI substrate, the rectangular trench is arranged on the silicon dioxide dielectric layer, and the lower metal electrode is arranged on the upper surface of the SOI top silicon layer.
According to the embodiment of the disclosure, the patterned substrate is a Si substrate with a silicon dioxide dielectric layer on the upper surface, the V-shaped groove is arranged in the Si substrate, the rectangular groove is arranged in the silicon dioxide dielectric layer, and the lower metal electrode is arranged on the lower surface of the Si substrate.
According to the embodiment of the present disclosure, the inverted ridge waveguide III-V submicron structure comprises, from bottom to top: the buffer layer, lower contact layer, lower waveguide layer, quantum well active region, go up waveguide layer and upper contact layer, wherein lower waveguide layer lower extreme is not higher than the graphical substrate top.
According to the embodiment of the present disclosure, when the layer where the V-shaped trench is located is N-type doped, the inverted ridge type III-V group submicron structure includes, from bottom to top: the semiconductor device comprises an N-type buffer layer, an N-type lower contact layer, a lower waveguide layer, a quantum well active region, an upper waveguide layer and a P-type upper contact layer.
According to the embodiment of the present disclosure, when the layer where the V-shaped trench is located is P-type doped, the inverted ridge type III-V submicron structure includes, from bottom to top: the semiconductor device comprises a P-type buffer layer, a P-type lower contact layer, a lower waveguide layer, a quantum well active region, an upper waveguide layer and an N-type upper contact layer.
According to the embodiment of the disclosure, the upper surface of the III-V submicron structure of the inverted ridge waveguide is a flat {001} crystal plane.
A second aspect of the present disclosure provides a method for preparing an electric pump laser, including:
preparing a patterned substrate and a communication groove;
extending an inverted ridge waveguide III-V family submicron structure on the communication groove in an epitaxial manner;
depositing passivation layers on two sides of the III-V family submicron structure of the inverted ridge waveguide and the upper surface of the patterned substrate, wherein the passivation layers are silicon dioxide passivation layers;
spin-coating a benzocyclobutene layer on the silicon dioxide passivation layer, and solidifying and etching the benzocyclobutene layer to enable the top end of the benzocyclobutene layer to be lower than the top end of the reverse ridge waveguide III-V submicron structure;
preparing the upper surface of the inverted ridge waveguide III-V submicron structure, wherein the upper surface of the inverted ridge waveguide III-V submicron structure is a {001} crystal plane;
and preparing an upper metal electrode on the III-V submicron structure of the inverted ridge waveguide, and preparing a lower metal electrode on the upper surface or the lower surface of the patterned substrate.
According to the embodiment of the present disclosure, the reverse ridge waveguide III-V group submicron structure comprises, from bottom to top: the buffer layer, lower contact layer, lower waveguide layer, quantum well active region, go up waveguide layer and upper contact layer, wherein lower waveguide layer lower extreme is not higher than the graphical substrate top.
The invention provides a pump laser, wherein a III-V submicron structure is extended out of a communicating groove to form an inverted ridge waveguide structure, so that the leakage loss of a substrate can be effectively controlled, and the substrate does not need to be processed. The upper surface of the inverted ridge type submicron structure is designed to be a {001} crystal face, so that the metal absorption loss caused by the covering of an upper metal electrode level can be effectively controlled, the V-shaped groove can be prepared on SOI bottom silicon, the SOI bottom silicon and a box layer thereof form a communicating groove, III-V materials extending out of the groove can be optically coupled with SOI top silicon, and the monolithic integration of a subsequent photoelectric device is facilitated. In addition, the invention also provides a preparation method of the electric pump laser, which effectively controls the substrate leakage loss and the metal absorption loss by using a simple preparation process, reduces the process implementation difficulty of the silicon-based submicron electric pump laser and has strong implementability.
Drawings
For a more complete understanding of the present invention, and the advantages thereof, reference is now made to the following descriptions taken in conjunction with the accompanying drawings, in which:
fig. 1 schematically shows a schematic structural diagram of an electrically pumped laser according to an embodiment of the present invention.
FIG. 2a is a schematic diagram of a patterned substrate structure with V-shaped trenches in the SOI bottom silicon layer according to an embodiment of the present invention;
FIG. 2b is a schematic diagram of an electrically pumped laser with a V-shaped trench in the SOI base silicon layer according to an embodiment of the present invention;
FIG. 3a schematically illustrates a patterned substrate structure with V-shaped trenches in the SOI top silicon layer according to an embodiment of the present invention;
FIG. 3b schematically shows a schematic structural diagram of an electrically pumped laser with a V-shaped trench in the SOI top silicon layer according to an embodiment of the present invention;
FIG. 4a schematically shows a patterned substrate structure with V-shaped trenches provided in a Si substrate according to an embodiment of the invention
Fig. 4b schematically shows a schematic structural diagram of an electric pump laser with a V-groove on a Si substrate according to an embodiment of the present invention.
FIG. 5a schematically illustrates a structure after epitaxy of III-V material in a communication trench, in accordance with an embodiment of the present invention;
FIG. 5b schematically illustrates a schematic structural view of a group III-V sub-micron structure of an inverted ridge waveguide in accordance with an embodiment of the present invention;
fig. 6 schematically shows a flow chart of a method for fabricating an electrically pumped laser according to an embodiment of the present invention.
Fig. 7 schematically shows a structure of the upper metal electrode according to an embodiment of the present invention.
[ description of reference ]
1-patterning a silicon layer
101-SOI bottom silicon layer
102-SOI top silicon layer
103-Si substrate
2-patterned silicon dioxide layer
201-SOI box layer
202-silicon dioxide masking layer
203-silicon dioxide dielectric layer
3-inverted ridge waveguide III-V group submicron structure
301 buffer layer
302-lower contact layer
303-lower waveguide layer
304-quantum well active region
305-upper waveguide layer
306-upper contact layer
4-passivation layer
5-benzocyclobutene layer
6-upper metal electrode
7-lower metal electrode
Detailed Description
Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that the description is illustrative only and is not intended to limit the scope of the present disclosure. In the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the embodiments of the disclosure. It may be evident, however, that one or more embodiments may be practiced without these specific details. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present disclosure.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. The terms "comprises," "comprising," and the like, as used herein, specify the presence of stated features, steps, operations, and/or components, but do not preclude the presence or addition of one or more other features, steps, operations, or components.
All terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art unless otherwise defined. It is noted that the terms used herein should be interpreted as having a meaning that is consistent with the context of this specification and should not be interpreted in an idealized or overly formal sense.
Fig. 1 schematically shows a schematic structural diagram of an electrically pumped laser according to an embodiment of the present invention. As shown in fig. 1, the present disclosure provides an electrically pumped laser including a lower metal electrode 7, a patterned substrate, an inverted ridge waveguide group III-V sub-micron structure 3, a passivation layer 4, a benzocyclobutene layer 5, and an upper metal electrode 6.
A lower metal electrode 7 positioned on the upper surface or the lower surface of the patterned substrate; the patterned substrate comprises a patterned silicon layer 1 and a patterned silicon dioxide layer 2, wherein at least one communicating groove is formed in the patterned substrate and comprises a rectangular groove and a V-shaped groove; the reverse ridge type waveguide III-V family submicron structure 3 is arranged in the communicating groove and on the communicating groove; the passivation layer 4 is arranged on two sides of the inverted ridge waveguide III-V family submicron structure 3 on the communicating groove and on the upper surface of the patterned substrate, and the thickness of the passivation layer 4 is 100nm-300 nm; the benzocyclobutene layer 5 is arranged on one side of the passivation layer 4; wherein the top ends of the benzocyclobutene layer 5 and the passivation layer 4 are as high as the top end of the reverse ridge waveguide III-V group submicron structure 3; and the upper metal electrode 6 is arranged on the inverted ridge type waveguide III-V group submicron structure 3.
In the embodiment, by controlling the structural size of the inverted ridge waveguide III-V group submicron structure 3 positioned on the communicating groove, the leakage loss of the patterned substrate can be effectively reduced under the condition of not performing additional processing on the patterned substrate.
Fig. 2a schematically shows a patterned substrate structure with a V-groove formed in the SOI base silicon layer 101 according to an embodiment of the present invention, and fig. 2b schematically shows a structure of an electric pump laser with a V-groove formed in the SOI base silicon layer 101 according to an embodiment of the present invention. As shown in fig. 2a and 2b, the patterned substrate is an SOI substrate with a silicon dioxide mask layer 202 on the upper surface.
In this embodiment, the V-shaped trench is a V-shaped trench, the communicating trench is composed of a V-shaped trench in the SOI bottom silicon layer 101 and a silicon dioxide rectangular trench in the SOI box layer 201 and the silicon dioxide masking layer 202, wherein the thickness of the silicon dioxide masking layer 202 is 100nm to 200nm, a part of the remaining SOI top silicon layer 102 is used for coupling with the inverted ridge waveguide III-V group submicron structure 3, and a part of the remaining SOI top silicon layer 102 is covered by the silicon dioxide masking layer 202, so that a nucleation site in an epitaxial process of the inverted ridge waveguide III-V group submicron structure 3 is only on the upper surface of the V-shaped trench, and the lower metal electrode 7 is prepared on the lower surface of the SOI bottom silicon layer 101.
In the embodiment, the V-shaped silicon groove is prepared on the SOI bottom silicon layer 101, the V-shaped silicon groove and the SOI box layer 201 form a communicating groove, and III-V materials extending out of the groove can be optically coupled with the SO1 top silicon layer, SO that the monolithic integration of a subsequent photoelectric device is facilitated.
Fig. 3a schematically illustrates a patterned substrate structure with V-shaped trenches in the SOI top silicon layer 102, in accordance with an embodiment of the present invention; fig. 3b schematically shows a schematic structural diagram of an electrically pumped laser with a V-groove in the SOI top silicon layer 102 according to an embodiment of the present invention. As shown in fig. 3a and 3b, the patterned substrate is an SOI substrate with a silicon dioxide dielectric layer 203 on the upper surface. The communication trench is composed of a V-shaped trench prepared on the SOI top silicon layer 102 and a rectangular trench prepared on the upper surface of the silicon dioxide dielectric layer 203, and the lower metal electrode 7 is prepared on the upper surface of the SOI top silicon layer 102, wherein the thickness of the silicon dioxide dielectric layer 203 is more than 1 μm.
FIG. 4a is a schematic diagram showing a patterned substrate structure with V-shaped trenches on a Si substrate 103 according to an embodiment of the present invention; fig. 4b schematically shows a schematic structural diagram of an electric pump laser with a V-groove on the Si substrate 103 according to an embodiment of the present invention. As shown in fig. 4a and 4b, the patterned substrate is a Si substrate 103 with a silicon dioxide dielectric layer 203 on the upper surface, the communication trench is composed of a V-shaped trench prepared on the Si substrate 103 and a rectangular trench prepared on the silicon dioxide dielectric layer 203 on the upper surface, and the lower metal electrode 7 is prepared on the lower surface of the Si substrate 103, wherein the thickness of the silicon dioxide dielectric layer 203 is greater than 1 μm.
FIG. 5a schematically illustrates a structure after epitaxy of III-V material in a communication trench, in accordance with an embodiment of the present invention; fig. 5b schematically shows a schematic structural view of an inverted ridge waveguide group III-V sub-micron structure 3 according to an embodiment of the present invention. As shown in fig. 5a and 5b, the inverted ridge waveguide III-V submicron structure comprises, from bottom to top:
the buffer layer 301, the lower contact layer 302, the lower waveguide layer 303, the quantum well active region 304, the upper waveguide layer 305, the upper contact layer 306, and the bottom end of the lower waveguide layer 303 is not higher than the top end of the patterned silicon dioxide layer 2. Taking the patterned substrate V-shaped silicon groove layer as N-type doping, the inverse ridge type III-V group submicron structure comprises from bottom to top: the N-type buffer layer, the N-type lower contact layer, the lower waveguide layer 303, the quantum well active region 304, the upper waveguide layer 305, the P-type upper contact layer, and the lowest end of the lower waveguide layer 303 is not higher than the upper surface of the patterned silicon dioxide layer 2. When the layer of the patterned substrate V-shaped silicon groove is doped in a P type, the inverted ridge type III-V group submicron line epitaxial structure comprises the following components from bottom to top: the P-type buffer layer, the P-type lower contact layer, the lower waveguide layer 303, the quantum well active region 304, the upper waveguide layer 305, the N-type upper contact layer, and the bottom end of the lower waveguide layer 303 is not higher than the top end of the patterned silicon dioxide layer 2.
As an alternative embodiment, the upper surface of the III-V submicron structure of the inverted ridge waveguide is a flat {001} crystal plane, and the III-V submicron structure can be prepared by any one of chemical mechanical polishing, epitaxial temperature control or catalyst addition in the epitaxial process.
In the electric pump laser disclosed by the embodiment, the upper surface of the inverted ridge waveguide III-V submicron structure is a flat {001} crystal plane, so that the problem of metal absorption loss caused by upper electrode covering can be effectively solved.
Fig. 6 schematically shows a flow chart of a method for fabricating an electrically pumped laser according to an embodiment of the present invention. As shown in fig. 6, a method for manufacturing an electric pump laser includes:
step 100: preparing a patterned substrate and a communication groove;
step 200: extending an inverted ridge waveguide III-V family submicron structure 3 on the communicating groove;
step 300: depositing passivation layers 4 on two sides of the inverted ridge waveguide III-V group submicron structure 3 and the upper surface of the patterned substrate, wherein the passivation layers 4 are silicon dioxide passivation layers;
step 400: spin-coating a benzocyclobutene layer 5 on the silicon dioxide passivation layer, and solidifying and etching the benzocyclobutene layer 5 to enable the top end of the benzocyclobutene layer 5 to be lower than the top end of the reverse ridge waveguide III-V submicron structure;
step 500: preparing the upper surface of the inverted ridge waveguide III-V submicron structure, wherein the upper surface of the inverted ridge waveguide III-V submicron structure is a {001} crystal plane;
finally, the top end of the benzocyclobutene layer 5, the top end of the passivation layer 4 and the top end of the reverse ridge waveguide III-V family submicron structure 3 are equal in height;
step 600: preparing an upper metal electrode 6 on the inverted ridge waveguide III-V submicron structure;
step 700: preparing a lower metal electrode 7 on the upper surface or the lower surface of the patterned substrate;
finally, an optical resonant cavity is formed to play the role of a laser.
Taking the example that the V-shaped groove is prepared on the SOI bottom silicon layer 101, and the bottom silicon layer is doped with N type, the specific preparation process is as follows:
preparing a patterned substrate, etching the SOI top silicon layer 102, depositing a silicon dioxide masking layer 202, etching the silicon dioxide masking layer 202 and the SOI box layer 201 to prepare a silicon dioxide rectangular groove, and corroding the SOI bottom silicon layer 101 to prepare a V-shaped groove;
extending an inverted ridge waveguide III-V sub-micron structure 3 in the connected trench, (as shown in fig. 5 a), the inverted ridge III-V sub-micron structure 3 comprising, from bottom to top: an N-type buffer layer, an N-type lower contact layer, a lower waveguide layer 303, a quantum well active region 304, an upper waveguide layer 305 and a P-type upper contact layer;
depositing silicon dioxide passivation layers on two sides of the inverted ridge waveguide III-V group submicron structure 3 and the upper surface of the patterned substrate;
spin-coating a benzocyclobutene layer 5 on the silicon dioxide passivation layer, and curing and etching to enable the top end of the benzocyclobutene layer 5 to be lower than the top end of the reverse ridge waveguide III-V submicron structure 3;
chemically and mechanically polishing the III-V submicron structure 3 of the inverted ridge waveguide and a silicon dioxide passivation layer to prepare a {001} crystal face;
preparing an upper metal electrode 6 on the III-V submicron structure of the inverted ridge waveguide (shown in figure 7);
a lower metal electrode 7 (shown in fig. 2 a) is prepared on the lower surface of the SOI base silicon layer 101.
Taking the example that the V-shaped groove is prepared on the Si substrate 103, and the Si substrate 103 is P-type doped, the specific preparation process is as follows:
preparing a graphical substrate, depositing a silicon dioxide dielectric layer 203 on the upper surface of the Si substrate 103, etching the silicon dioxide dielectric layer 203 on the upper surface of the Si substrate 103 to prepare a silicon dioxide rectangular groove, and etching the Si substrate 103 to prepare a V-shaped groove;
extending an inverted ridge waveguide III-V submicron structure 3 (as shown in FIG. 5 a) in the connected trench, the inverted ridge waveguide III-V submicron structure comprising, from bottom to top: a P-type buffer layer, a P-type lower contact layer, a lower waveguide layer 303, a quantum well active region 304, an upper waveguide layer 305, an N-type upper contact layer;
depositing silicon dioxide passivation layers on two sides of the inverted ridge waveguide III-V group submicron structure 3 and the upper surface of the patterned substrate, wherein the top end of the silicon dioxide passivation layer is higher than the bottom end of the lower waveguide layer 303 to avoid current leakage;
spin-coating a benzocyclobutene layer 5 on the silicon dioxide passivation layer, and curing and etching to enable the top end of the benzocyclobutene layer 5 to be lower than the top end of the reverse ridge waveguide III-V submicron structure 3;
chemically and mechanically polishing the III-V family submicron structure 3 of the inverted ridge waveguide and the silicon dioxide dielectric layer 203 to prepare a {001} crystal face;
an upper metal electrode 6 is fabricated on the inverted ridge waveguide III-V sub-micron structure (as shown in fig. 7).
A lower metal electrode 7 is prepared on the lower surface of the Si substrate 103.
It should be noted that, in the embodiment of the present invention, the preparation method portion of the electric pump laser corresponds to the electric pump laser portion of the present invention, and the description of the preparation method portion of the electric pump laser specifically refers to the electric pump laser portion, which is not described herein again.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. An electrically pumped laser, comprising:
the device comprises a lower metal electrode, a patterned substrate, an inverted ridge waveguide III-V family submicron structure, a passivation layer, a benzocyclobutene layer and an upper metal electrode;
the lower metal electrode is positioned on the upper surface or the lower surface of the patterned substrate;
the patterned substrate comprises a patterned silicon layer and a patterned silicon dioxide layer, at least one communicating groove is arranged on the patterned substrate, and the communicating groove comprises a rectangular groove and a V-shaped groove;
the inverted ridge waveguide III-V family submicron structure is arranged in the communication groove and on the communication groove;
the passivation layer is arranged on two sides of the inverted ridge waveguide III-V family submicron structure on the communication groove and on the upper surface of the patterned substrate;
the benzocyclobutene layer is arranged on one side of the passivation layer;
the top end of the benzocyclobutene layer, the top end of the passivation layer and the top end of the reverse ridge waveguide III-V family submicron structure are equal in height;
the upper metal electrode is arranged on the inverted ridge type waveguide III-V family submicron structure.
2. The electric pump laser as claimed in claim 1, wherein the patterned substrate is an SOI substrate having a silicon dioxide mask layer on the upper surface, the V-shaped trench is disposed in the SOI substrate silicon layer of the SOI substrate, the rectangular trench is disposed in the SOI substrate SOI box layer and the silicon dioxide mask layer, and the lower metal electrode is disposed on the lower surface of the SOI substrate silicon layer.
3. The electric pump laser as claimed in claim 1, wherein the patterned substrate is an SOI substrate having a silicon dioxide dielectric layer on an upper surface thereof, the V-shaped trench is disposed in a top silicon layer of the SOI substrate, the rectangular trench is disposed in the silicon dioxide dielectric layer, and the lower metal electrode is disposed on the upper surface of the top silicon layer of the SOI substrate.
4. The electric pump laser as claimed in claim 1, wherein the patterned substrate is a Si substrate with a silicon dioxide dielectric layer on the upper surface, the V-shaped trench is disposed in the Si substrate, the rectangular trench is disposed in the silicon dioxide dielectric layer, and the lower metal electrode is disposed on the lower surface of the Si substrate.
5. The electrically pumped laser as claimed in claim 1, wherein the inverted ridge waveguide III-V sub-micron structure comprises, from bottom to top: the buffer layer, lower contact layer, lower waveguide layer, quantum well active region, go up waveguide layer and upper contact layer, wherein lower waveguide layer lower extreme is not higher than the graphical substrate top.
6. The electrically pumped laser as claimed in claim 5, wherein, when the V-shaped trench is doped N-type, the ridge-inverted III-V submicron structure comprises, from bottom to top: the semiconductor device comprises an N-type buffer layer, an N-type lower contact layer, a lower waveguide layer, a quantum well active region, an upper waveguide layer and a P-type upper contact layer.
7. The electrically pumped laser as claimed in claim 5, wherein the n-type trench is P-doped, and the inverted ridge III-V submicron structure comprises, from bottom to top: the semiconductor device comprises a P-type buffer layer, a P-type lower contact layer, a lower waveguide layer, a quantum well active region, an upper waveguide layer and an N-type upper contact layer.
8. The electric pump laser as claimed in claim 1, wherein the upper surface of the inverted ridge waveguide III-V sub-micron structure is a flat {001} crystal plane.
9. A method for preparing an electric pump laser is characterized by comprising the following steps:
preparing a patterned substrate and a communication groove;
extending an inverted ridge waveguide III-V family submicron structure on the communication groove in an epitaxial manner;
depositing passivation layers on two sides of the III-V family submicron structure of the inverted ridge waveguide and the upper surface of the patterned substrate, wherein the passivation layers are silicon dioxide passivation layers;
spin-coating a benzocyclobutene layer on the silicon dioxide passivation layer, and solidifying and etching the benzocyclobutene layer to enable the top end of the benzocyclobutene layer to be lower than the top end of the reverse ridge waveguide III-V submicron structure;
preparing the upper surface of the inverted ridge waveguide III-V submicron structure, wherein the upper surface of the inverted ridge waveguide III-V submicron structure is a {001} crystal plane;
and preparing an upper metal electrode on the III-V submicron structure of the inverted ridge waveguide, and preparing a lower metal electrode on the upper surface or the lower surface of the patterned substrate.
10. The method of claim 9, wherein the inverted ridge waveguide group III-V submicron structure comprises, from bottom to top: the buffer layer, lower contact layer, lower waveguide layer, quantum well active region, go up waveguide layer and upper contact layer, wherein lower waveguide layer lower extreme is not higher than the graphical substrate top.
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