CN113644541A - Direct modulation laser driving circuit for high-speed photoelectric interconnection - Google Patents
Direct modulation laser driving circuit for high-speed photoelectric interconnection Download PDFInfo
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- CN113644541A CN113644541A CN202110683393.0A CN202110683393A CN113644541A CN 113644541 A CN113644541 A CN 113644541A CN 202110683393 A CN202110683393 A CN 202110683393A CN 113644541 A CN113644541 A CN 113644541A
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- H01—ELECTRIC ELEMENTS
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- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0427—Electrical excitation ; Circuits therefor for applying modulation to the laser
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Abstract
The invention belongs to the technical field of chip design, and relates to a direct modulation laser driving circuit facing high-speed photoelectric interconnection, which comprises: a first matching resistor, a second matching resistor, a transistor M1, and a transistor M2; when the transistor M1 is closed and the transistor M2 is open, the drive current of the laser diode is I1(ii) a When the transistor M2 is closed and the transistor M1 is open, the drive current of the laser diode is I1+I2For: and (5) modulating. The impedance matching is provided through the matching resistors on the two sides of the laser diode, the reflection of high-speed signals is inhibited, and the signal quality is improved; the high-speed differential input signal controls the switch of a pair of high-speed CMOS transistors to obtain different driving currents, so that a rapidly-changing optical signal is obtained, and the modulation of the optical signal is realized.
Description
Technical Field
The invention belongs to the technical field of chip design, relates to a direct modulation laser driving circuit facing high-speed photoelectric interconnection, and particularly relates to a direct modulation laser driving circuit facing high-speed photoelectric interconnection based on a CMOS (complementary metal oxide semiconductor) process.
Background
The technical scheme of the first prior art related to the invention is briefly described as follows:
fig. 1 is a schematic diagram of a dc-coupled driving circuit, in which the output of the driving circuit is connected to the cathode and the anode of the laser diode LD through two resistors, the cathode of the laser diode LD is directly biased at the power supply, the dc bias current is controlled by connecting a current source to the anode, and the modulation current of the laser diode LD is determined by the tail current of the transistor in the left driving circuit. The direct current coupling driving circuit is simple in structure, and normal operation of the laser diode LD can be achieved only by biasing the laser diode LD to a lower value (larger than the threshold value of the laser diode LD).
The above-mentioned first prior art has the following disadvantages:
the problems of the dc-coupled driving circuit are: when the laser diode needs to be driven at a higher speed, higher modulation current is difficult to realize; for example: at a supply voltage of VDDAt a data rate of 25Gbit/s, the maximum modulation time for the current to rise from bias to peak is 20ps, and the modulation current Imod60mA, equivalent resistance R of the laser diodeD20 ohms (including package resistance), and assuming symmetrical waveform, the equivalent resistance R of the laser diodeDInstantaneous voltage change V acrossLAs shown in the formula (1),
VL＝Ldi/dt (1)
wherein L is the inductance of the laser diode (including parasitic inductance of Bonding wire), and when L is 0.5nH, the turn-on voltage of the laser diode is 1.6V, VLIf the voltage is 1.5V, the instantaneous voltage V at the output end of the direct current coupling driving circuit is as shown in the formula (2),
V＝VDD-1.5-1.6-(ImodRD) (2)
therefore, a larger supply voltage is required for the rate and modulation current. At this time, the transistor of the output stage of the dc coupling driving circuit needs to use a high-voltage tube with high pressure-bearing capacity, but the switching speed of the high-voltage tube is generally slow, and the high-voltage tube cannot be applied to a high-speed interconnected circuit, so that the upper limit of the data rate that can be transmitted is low by applying the technical scheme of the first prior art.
The second technical solution of the prior art related to the present invention is briefly described as follows:
the ac-coupled driving circuit structure is shown in fig. 2, and is different from the dc-coupled driving circuit in that: (1) the alternating voltage at two ends of the laser diode LD is related to the equivalent resistance, and the magnitude is equal to the product of the modulation current and the equivalent resistance; (2) the transient voltage is equal to the equivalent resistance times half the modulation current.
The second prior art described above has the following disadvantages:
compared with a direct current coupling driving circuit, the design margin of the alternating current coupling driving circuit structure is larger, but extra capacitance and inductance are introduced, signal distortion can be caused for a high-speed path, and therefore the requirement on circuit matching is higher. In addition, the coupling capacitor in the ac coupling driving circuit structure may have a certain influence on the jitter of the system, and the capacitance value thereof needs to be set large enough to reduce the influence, but this will also have an influence on the bandwidth of the ac coupling driving circuit, and the above factors should be fully considered in the design, which increases the difficulty of the design.
List of key term definitions
1. DFB laser: a Distributed Feedback Laser (Distributed Feedback Laser) with a Bragg Grating (Bragg Grating) built therein belongs to a side-emitting semiconductor Laser.
2. Current driving: different power is output according to the magnitude of the driving current.
3. Current logic: one class of logic circuits is based on current switches, low voltage swings, and differential signals.
4. Direct current coupling: the direct current component and the alternating current component of the signal are all transmitted to the rear stage by directly connecting the front stage and the rear stage or by connecting the front stage and the rear stage through a resistor.
5. Alternating current coupling: through the mode of blocking capacitor connection, the direct current component is removed by using the blocking function of the blocking capacitor, and only the alternating current component of the signal is transmitted.
6. Direct modulation: the driving current of the semiconductor laser or the light emitting diode is directly modulated by an electric signal, so that the output light is changed along with the electric signal.
7. Optical interconnection: is an optical communication method, which uses optical fiber or other optical transmission medium to exchange data among various components or subsystems in a computer.
8. TOSA: namely Transmitter Optical Subassembly (Transmitter Optical Subassembly).
Disclosure of Invention
In order to solve the problems existing in the background art and realize the driving of the high-speed directly modulated laser, the application provides a directly modulated laser driving circuit (i.e. a directly modulated laser driving circuit) capable of working at a high speed, and the specific technical scheme is as follows:
a direct modulation laser driving circuit facing high-speed photoelectric interconnection is connected with an anode of a laser diode in a direct current coupling mode, and is connected with a cathode of the laser diode in an alternating current coupling mode;
the anode of the laser diode is connected in series with the first inductor and the first matching resistor; and the cathode of the laser diode is connected with the second matching resistor so as to realize impedance matching between the laser driving circuit and the laser diode.
On the basis of the technical scheme, when the laser diode works at a high speed, signal reflection between the laser diode and the laser driving circuit is inhibited by adjusting impedance matching.
On the basis of the technical scheme, after the cathode of the laser diode is connected with the second matching resistor, the second matching resistor is connected with the collector electrode of the transistor M3 to construct a branch coupling path, so that the regulation and control of the branch component of the driving current are realized;
applying a bias voltage V to the base of transistor M3b2。
On the basis of the technical scheme, a first adjustable current source is arranged on the branch coupling path.
On the basis of the above technical solution, the laser driving circuit is connected to the anode of the laser diode in a dc coupling manner, and specifically includes:
the anode of the laser diode is connected with one end of a first inductor, the other end of the first inductor is connected with one end of a first matching resistor, and the other end of the first matching resistor is connected with the collector electrode of the transistor M4;
applying a bias voltage V to the base of the transistor M4b1；
The emitter of the transistor M4 is connected to the collector of the transistor M1;
the emitter of transistor M1 is connected to a second adjustable current source.
On the basis of the technical scheme, the laser driving circuit is connected with the cathode of the laser diode in an alternating current coupling mode, and the method specifically comprises the following steps:
one end of the second inductor is connected with the cathode of the laser diode;
the other end of the second inductor is connected with the collector of the transistor M5 through a capacitor;
the emitter of the transistor M5 is connected to the collector of the transistor M2.
On the basis of the technical scheme, the capacitor is a high-speed capacitor and is used for: providing AC coupling between the laser driving circuit and the laser diode;
a bias voltage V is also applied to the base of the transistor M5b1；
The emitter of transistor M2 is also connected to a second adjustable current source.
On the basis of the technical scheme, when the transistor M1 is closed and the transistor M2 is opened, the driving current of the laser diode is I1(ii) a When the transistor M2 is closed and the transistor M1 is open, the drive current of the laser diode is I1+I2。
On the basis of the above technical solution, the input signal IN is applied to the base of the transistor M1P(ii) a Applying the input signal IN at the base of the transistor M2N。
On the basis of the above technical solution, the input signal INPAnd INNAre all differential input signals, and are,
the magnitude of the actual current flowing into the branch is controlled by the differential input signal to achieve modulation of the drive current flowing through the laser diode.
On the basis of the above technical solution, the input signal INPAnd an input signal INNAre identical in amplitude and opposite in phase.
The application of a direct modulation laser driving circuit oriented to high-speed photoelectric interconnection in optical communication.
Compared with the prior art, the invention has the following beneficial technical effects:
the technical scheme is that the circuit design can directly drive a laser diode to work at a high speed, and in the design, impedance matching between a driving circuit and the laser diode can be provided through matching resistors on two sides of the laser diode, so that reflection of high-speed signals is inhibited, and the signal quality is improved; in addition, different driving currents can be obtained by controlling the switches of the high-speed CMOS transistors through the high-speed differential input signals, so that the optical signals which change rapidly are obtained, and the modulation of the optical signals is realized.
Drawings
The invention has the following drawings:
FIG. 1 is a schematic diagram of a DC-coupled driving circuit;
FIG. 2 is a schematic diagram of an AC-coupled driving circuit;
FIG. 3 is a schematic diagram of the high-speed optoelectronic interconnect-oriented direct modulation laser driving circuit according to the present invention;
fig. 4 is a schematic diagram of a transient waveform of a high-speed optoelectronic interconnect-oriented directly modulated laser driving circuit according to the present invention.
Detailed Description
The following describes embodiments of the present invention with reference to the drawings.
In order to realize a direct modulation laser driving circuit facing an optoelectronic interconnection and working at a high speed, a driving circuit as shown in fig. 3 is proposed, and the specific embodiment is as follows:
a high-speed opto-electronic interconnect oriented direct modulation laser driver circuit comprising: the current source circuit comprises a first inductor, a second inductor, a first matching resistor (namely, a first matching resistor), a second matching resistor (namely, a second matching resistor), a capacitor, a transistor M1, a transistor M2, a transistor M3, a transistor M4, a transistor M5, a first adjustable current source and a second adjustable current source;
the anode of the laser diode is connected with one end of the first inductor, the other end of the first inductor is connected with one end of a first matching resistor, the other end of the first matching resistor is connected with the collector of the transistor M4, the gate of the transistor M4 is connected with the gate of the transistor M5, the emitter of the transistor M4 is connected with the collector of the transistor M1, and the gate of the transistor M1 is connected with the input signal INPThe emitter of the transistor M1 is connected with the emitter of the transistor M2 and one end of the first adjustable current source, and the other end of the first adjustable current source is grounded;
the gate of the transistor M2 is connected to the input signal INNThe collector of the transistor M2 is connected with the emitter of the transistor M5, the collector of the transistor M5 is connected with one end of a capacitor, the other end of the capacitor is connected with one end of a second inductor, the other end of the second inductor is connected with the cathode of the laser diode and one end of a second matching resistor, the other end of the second matching resistor is connected with the collector of the transistor M3, and the gate of the transistor M3 is connected with the input voltage Vb2The emitter of the transistor M3 is connected with one end of a second adjustable current source, the other end of the second adjustable current source is grounded, and the gate of the transistor M4 and the gate of the transistor M5 are both connected with the input voltage Vb1；
The direct modulation laser driving circuit facing the high-speed optoelectronic interconnection is used for modulation of a laser diode.
On the basis of the technical scheme, the transistor M1, the transistor M2, the transistor M3, the transistor M4 and the transistor M5 are all CMOS transistors.
On the basis of the technical scheme, the transistor M1, the transistor M2, the transistor M3, the transistor M4 and the transistor M5 are all N-type CMOS transistors.
On the basis of the technical scheme, the transistor M1, the transistor M2, the transistor M3, the transistor M4 and the transistor M5 are all high-speed CMOS transistors.
On the basis of the above technical solution, the input signal INPAnd an input signal INNIs a high speed differential input signal.
At the upper partOn the basis of the technical scheme, the input signal INPAnd an input signal INNAre identical in amplitude and opposite in phase.
On the basis of the technical scheme, when the transistor M1 is closed and the transistor M2 is opened, the driving current of the laser diode is I1(ii) a When the transistor M2 is closed and the transistor M1 is open, the drive current of the laser diode is I1+I2。
On the basis of the technical scheme, the current sizes of the first adjustable current source and the second adjustable current source can be adjusted, and the currents of the first adjustable current source and the second adjustable current source are independently adjusted without mutual influence.
On the basis of the above technical solution, the first adjustable current source and the second adjustable current source have the same circuit structure, and both include: the device comprises a singlechip control circuit, a DA conversion circuit, an operation negative feedback circuit, a current acquisition circuit, an overcurrent protection circuit, a display circuit and a key circuit;
the singlechip control circuit is connected with the current acquisition circuit, the overcurrent protection circuit, the display circuit, the key circuit and the DA conversion circuit;
the DA conversion circuit is connected with the operation negative feedback circuit;
the current acquisition circuit is connected with the operation negative feedback circuit and the overcurrent protection circuit;
the DA conversion circuit is used for: converting the digital signal output by the singlechip control circuit into an analog signal and transmitting the analog signal to an operation negative feedback circuit;
the operational negative feedback circuit is used for: expanding the flow;
the current acquisition circuit is used for: collecting the current output by the operation negative feedback circuit, and outputting the current to the singlechip and the overcurrent protection circuit;
the display circuit is configured to: displaying the current value acquired by the current acquisition circuit;
the key circuit is used for: setting parameters, inputting a given current value and confirming;
the over-current protection circuit is used for: providing load over-current protection.
On the basis of the above technical solution, the key circuit includes: the key comprises a first key for confirming, a second key for increasing the output current value and a third key for reducing the output current value.
The key circuit adopts many independent buttons, and an IO mouth of a termination singlechip of every button, the other end all ground connection because the IO mouth of singlechip all has inside pull-up, consequently when the button does not press, what detect at the IO mouth is high level, when the button is pressed, is equivalent to IO mouth short grounding, and at this moment, the level that the singlechip detected is low level, just can judge that what pressed through the IO mouth state that detects different moments.
On the basis of the technical scheme, the singlechip control circuit comprises: a single chip microcomputer and peripheral circuits thereof; the model of singlechip is STC89C52, and its peripheral circuit includes: a reset circuit and a crystal oscillation circuit.
The reset circuit includes: a capacitor, a resistor and a key; the crystal oscillation circuit includes: a capacitor and a crystal oscillator, wherein the frequency of the crystal oscillator is 12 MHz.
The DA conversion circuit includes: a digital-to-analog converter model TLC 5615; pins 1, 2 and 3 of the TLC5615 are respectively coupled with ports P3.7, P3.6 and P3.5 of the single chip microcomputer, a pin 7 of the TLC5615 is coupled with an operation negative feedback circuit and outputs a DA conversion value, a pin 6 of the TLC5615 is a reference voltage source and is coupled with a TL431 type controllable precise voltage-stabilizing source. The voltage output to the TLC5615 by the single chip microcomputer is changed through the key circuit, and then the output voltage of the 7 th pin of the TLC56155 changes the output current value of the operation negative feedback circuit.
The operational negative feedback circuit includes: the first operational amplifier is LM358, and the triode is IFR 540N. The same-direction end of the first operational amplifier is connected with a pin 7 of the TLC5615, receives a DA conversion value output by the TLC5615, the inverting end of the first operational amplifier is connected with an emitting electrode of the triode IFR540N, the output end of the first operational amplifier is connected with a base electrode of the triode IFR540N, a collector electrode of the triode IFR540N is connected with a load, and an emitting electrode of the triode IFR540N is also grounded through a resistor R1. LM358 and IFR540N form negative feedback, so the voltage value of the No. 2 pin and the No. 3 pin of LM358 are equal, the current flowing through the emitter of IFR540N is also the current flowing through the resistor R1, and the value is equal to the voltage value of the No. 3 pin of LM358 divided by the resistance value of the resistor R1; the current is also equal to the current flowing through the load, and the current on the load is irrelevant to the load impedance, so the current value of the load can be adjusted by adjusting the output voltage value of the TLC5615 through the singlechip.
The direct modulation laser driving circuit facing the high-speed photoelectric interconnection can be applied to optical communication.
The rationale process is briefly described as follows:
the main three paths of the driving circuit are formed by the paths of the transistors M1, M2 and M3, the anode and the cathode of the laser diode are respectively connected with the driving circuit in a direct current and alternating current coupling mode, and the alternating current coupling of the cathode forms a high-speed alternating current path. In addition, the anode and the cathode of the laser diode are respectively connected with a matching resistor to realize impedance matching. Input signal INNAnd INPWhen the transistor M1 is closed and the transistor M2 is opened for differential input signal, the driving current of the laser diode is I1(ii) a When the transistor M2 is closed and the transistor M1 is open, the drive current of the laser diode is I1+I2Fig. 4 shows a schematic diagram of a transient waveform of the driving circuit.
The key points and points to be protected of the technology of the invention are briefly described as follows:
1) the structure of the laser driving circuit comprises: the connection mode and bias method of transistors in the circuit. The modulation of the driving current flowing through the laser diode is realized by controlling the magnitude of the current actually flowing into each branch circuit through signals loaded to a pair of transistors;
2) the impedance matching mode is characterized in that a pair of resistors are respectively connected to two sides of a cathode and an anode of a laser diode to provide a proper impedance matching structure, so that signal reflection between the laser diode and a circuit is inhibited during high-speed signal modulation, the signal quality is improved, and high-speed photoelectric data modulation is realized; in addition, by selecting proper resistance and capacitance, the non-ideal effect brought by the packaging can be improved to a certain extent;
3) the connection mode of the laser diode and the driving circuit respectively adjusts the bias current and the modulation current flowing through the laser diode through two different current sources, and the working state of the laser diode can be flexibly adjusted through the sizes of the two current sources;
4) and the pair of high-speed CMOS transistors are respectively connected with the differential signals, and realize the rapid circulation or the shutoff of the current of the branch circuit according to the state of the signals. When the left branch is turned off and the right branch is closed, the current flowing through the laser diode is highest at this time; on the contrary, the laser driving current is the minimum value;
5) the two current sources are adjustable, the working state of the laser diode is adjusted through the current, and the working state of the laser diode can be configured through different current combinations;
6) the drains (i.e. emitters) of a pair of cascode transistors with the same bias voltage are respectively connected to a resistor and a capacitor, and the capacitor is used for: the AC coupling between the laser diode and the output node is provided, and the common-mode voltage of the output node can be adjusted to a certain extent by the resistance or the bias voltage;
7) the driving circuit is connected with the cathode of the laser diode chip through the high-speed capacitor to form alternating current coupling, so that the alternating current signal can be quickly coupled to the anode of the laser diode;
8) and a branch coupling path is constructed by the cathode of the laser diode and the branch of the transistor M3, so that the branch component of the driving current is regulated and controlled.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Those not described in detail in this specification are within the knowledge of those skilled in the art.
Claims (9)
1. A direct modulation laser driving circuit facing high-speed photoelectric interconnection is characterized in that the laser driving circuit is connected with an anode of a laser diode in a direct current coupling mode, and the laser driving circuit is connected with a cathode of the laser diode in an alternating current coupling mode;
the anode of the laser diode is connected in series with the first inductor and the first matching resistor; and the cathode of the laser diode is connected with the second matching resistor so as to realize impedance matching between the laser driving circuit and the laser diode.
2. A high-speed opto-electronic interconnect-oriented direct modulation laser driver circuit as claimed in claim 1, wherein: when the laser diode works at a high speed, signal reflection between the laser diode and a laser driving circuit is suppressed by adjusting impedance matching.
3. A high-speed opto-electronic interconnect-oriented direct modulation laser driver circuit as claimed in claim 1, wherein: after the cathode of the laser diode is connected with the second matching resistor, the second matching resistor is connected with the collector of the transistor M3 to construct a branch coupling path, so that the regulation and control of the branch component of the driving current are realized;
applying a bias voltage V to the base of transistor M3b2。
4. A high-speed opto-electronic interconnect-oriented direct modulation laser driver circuit as claimed in claim 3, wherein: and a first adjustable current source is arranged on the branch coupling path.
5. A high-speed opto-electronic interconnect-oriented direct modulation laser driver circuit as claimed in claim 4, wherein: the laser driving circuit is connected with the anode of the laser diode in a direct current coupling mode, and specifically comprises:
the anode of the laser diode is connected with one end of a first inductor, the other end of the first inductor is connected with one end of a first matching resistor, and the other end of the first matching resistor is connected with the collector electrode of the transistor M4;
applying a bias voltage V to the base of the transistor M4b1；
The emitter of the transistor M4 is connected to the collector of the transistor M1;
the emitter of transistor M1 is connected to a second adjustable current source.
6. A high-speed opto-electronic interconnect-oriented direct modulation laser driver circuit as claimed in claim 5, wherein: the laser driving circuit is connected with the cathode of the laser diode in an alternating current coupling mode, and specifically comprises:
one end of the second inductor is connected with the cathode of the laser diode;
the other end of the second inductor is connected with the collector of the transistor M5 through a capacitor;
the emitter of the transistor M5 is connected to the collector of the transistor M2.
7. A high-speed opto-electronic interconnect-oriented direct modulation laser driver circuit as claimed in claim 6, wherein: the capacitor is a high-speed capacitor and is used for: providing AC coupling between the laser driving circuit and the laser diode;
a bias voltage V is also applied to the base of the transistor M5b1；
The emitter of transistor M2 is also connected to a second adjustable current source.
8. A high-speed opto-electronic interconnect-oriented direct modulation laser driver circuit as claimed in claim 7, wherein: when the transistor M1 is closed and the transistor M2 is open, the driving current of the laser diode is I1(ii) a When transistor M2 is closed and transistor M1 is open,the laser diode has a drive current of I1+I2。
9. Use of a direct modulation laser driver circuit according to any of claims 1-8 oriented towards a high speed opto-electronic interconnect in optical communication.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4339822A (en) * | 1979-08-08 | 1982-07-13 | Optical Information Systems, Inc. | Diode laser digital modulator |
| CN101692521A (en) * | 2009-10-16 | 2010-04-07 | 上海博为光电科技有限公司 | Laser diode driver for optical communication transmitter |
| CN104767117A (en) * | 2015-04-24 | 2015-07-08 | 湖北工业大学 | High-speed laser device driving circuit |
| CN111313228A (en) * | 2020-05-14 | 2020-06-19 | 光梓信息科技（上海）有限公司 | Laser driving circuit and light emitting system |
| CN111916996A (en) * | 2020-08-03 | 2020-11-10 | 厦门亿芯源半导体科技有限公司 | Large modulation current direct current coupling type laser driving circuit |
-
2021
- 2021-06-21 CN CN202110683393.0A patent/CN113644541B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4339822A (en) * | 1979-08-08 | 1982-07-13 | Optical Information Systems, Inc. | Diode laser digital modulator |
| CN101692521A (en) * | 2009-10-16 | 2010-04-07 | 上海博为光电科技有限公司 | Laser diode driver for optical communication transmitter |
| CN104767117A (en) * | 2015-04-24 | 2015-07-08 | 湖北工业大学 | High-speed laser device driving circuit |
| CN111313228A (en) * | 2020-05-14 | 2020-06-19 | 光梓信息科技（上海）有限公司 | Laser driving circuit and light emitting system |
| CN111916996A (en) * | 2020-08-03 | 2020-11-10 | 厦门亿芯源半导体科技有限公司 | Large modulation current direct current coupling type laser driving circuit |
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