CN113644190A

CN113644190A - Telescopic structure, forming method, driving method, electronic equipment and camera module

Info

Publication number: CN113644190A
Application number: CN202010335321.2A
Authority: CN
Inventors: 黄河
Original assignee: Ningbo Semiconductor International Corp
Current assignee: Ningbo Semiconductor International Corp
Priority date: 2020-04-24
Filing date: 2020-04-24
Publication date: 2021-11-12

Abstract

A telescopic structure, a forming method, a driving method, electronic equipment and a camera module are provided, wherein the telescopic structure comprises: the first actuator comprises a first lower electrode, a first piezoelectric film positioned on the first lower electrode, a first upper electrode positioned on the first piezoelectric film and a first non-stretching layer; a second actuator is suspended from the first actuator, comprising: a second lower electrode, a second piezoelectric film on the second lower electrode, a second upper electrode on the second piezoelectric film, and a second non-stretching layer; the first non-telescopic layer is positioned above the first upper electrode, and the second non-telescopic layer is positioned below the second lower electrode. When the telescopic structure works, the first piezoelectric film and the second piezoelectric film are stretched in the same direction along the transverse direction, the first non-stretching layer and the second non-stretching layer do not shrink in the transverse direction, the first piezoelectric film and the second piezoelectric film warp in opposite directions, the longitudinal warping amounts of the first piezoelectric film and the second piezoelectric film are offset, and the transverse distance between the two ends of the second actuator in the extension direction is shortened.

Description

Telescopic structure, forming method, driving method, electronic equipment and camera module

Technical Field

The invention relates to the field of photoelectric imaging, in particular to a telescopic structure, a forming method, a driving method, electronic equipment and a camera module.

Background

With the improvement of user requirements and the iterative updating of terminal equipment, the integration level of the current terminal equipment is higher and higher, and the integration of the terminal equipment is more and more functional devices. One more prominent manifestation is: the number of camera modules on current terminal equipment is increasing. Different shooting requirements of users can be met by different types of camera modules. For example, the focusing camera module can meet focusing shooting in the shooting process, and the fixed-focus camera module can meet fixed-focus shooting of a user.

At present, users have higher requirements on the appearance performance of terminal equipment, and the terminal equipment is currently the mainstream in the direction of being thinner and thinner. The terminal equipment needs to be thinner while the terminal equipment is highly integrated, which requires that the sizes of the devices in the terminal equipment are smaller and smaller, and the assemblies among the devices are more and more compact.

In the prior art, on the premise of ensuring the performance of the device in the mobile terminal, when the size of the device is further reduced, the cost is increased or the implementation is difficult due to the limitation of technical conditions in most cases. Taking the focusing camera module as an example, the size of the focusing camera module is limited by the size limit of the zoom motor, and the overall size of the focusing camera module is difficult to further reduce. In a current focusing camera module, a zooming motor is installed on a base, a lens is installed on the zooming motor, and the lens can be driven by the zooming motor to adjust the distance between the lens and a photosensitive chip so as to achieve the purpose of focusing. And the motor size that zooms is great, leads to whole machine volume of whole module of making a video recording of focusing great, is unfavorable for terminal equipment to design towards thinner direction.

Disclosure of Invention

The invention provides a telescopic structure, a forming method thereof, electronic equipment and a camera module, and aims to provide the telescopic structure, the forming method, the electronic equipment and the camera module, which are beneficial to accurately controlling the deformation of the telescopic structure.

To solve the above problems, the present invention provides a telescopic structure, comprising: a first actuator including a first lower electrode, a first piezoelectric film on the first lower electrode, a first upper electrode on the first piezoelectric film, and a first non-stretching layer; a second actuator suspended from the first actuator, the second actuator comprising: a second lower electrode, a second piezoelectric film on the second lower electrode, a second upper electrode on the second piezoelectric film, and a second non-stretching layer; the first non-telescopic layer is positioned above the first upper electrode, and the second non-telescopic layer is positioned below the second lower electrode; or the first non-telescopic layer is positioned below the first lower electrode, and the second non-telescopic layer is positioned above the second upper electrode.

Correspondingly, the invention also provides a forming method of the telescopic structure, which comprises the following steps: forming a first actuator, the first actuator comprising: a first lower electrode, a first piezoelectric film on the first lower electrode, and a first upper electrode on the first piezoelectric film; forming a second actuator on the first actuator, the second actuator comprising: a second lower electrode, a second piezoelectric film on the second lower electrode, and a second upper electrode on the second piezoelectric film; in the step of forming the first actuator, the first actuator further includes: a first non-stretching layer located above the first upper electrode; in the step of forming the second actuator, the second actuator further includes: the second non-telescopic layer is positioned below the second lower electrode; alternatively, in the step of forming the first actuator, the first actuator further includes: a first non-stretching layer located below the first lower electrode; in the step of forming the second actuator, the second actuator further includes: and the second non-telescopic layer is positioned above the second upper electrode.

Correspondingly, the invention also provides a driving method of the telescopic structure, which comprises the following steps: executing initial driving processing to enable the first upper electrode, the first lower electrode, the second upper electrode and the second lower electrode to be in a floating state; after the initial driving process, performing a displacement process including: applying a first drive signal to the first lower electrode and a second drive signal to the first upper electrode to generate a potential difference between the top surface and the bottom surface of the first piezoelectric film, wherein the potential difference between the top surface and the bottom surface of the first piezoelectric film causes electrostriction of the first piezoelectric film; and applying a third drive signal to the second lower electrode and a fourth drive signal to the second upper electrode to generate a potential difference between the top surface and the bottom surface of the second piezoelectric film, wherein the potential difference between the top surface and the bottom surface of the second piezoelectric film causes electrostriction of the second piezoelectric film, and the potential difference between the top surface and the bottom surface of the second piezoelectric film is the same as the potential difference between the top surface and the bottom surface of the first piezoelectric film.

Correspondingly, the invention also provides an electronic device, comprising: a fixed platform; the telescopic structure as described in the previous paragraph, and one end of the telescopic structure is connected with the fixed platform; and the telescopic component is connected with the other end of the telescopic structure.

Correspondingly, the invention also provides a camera module, which comprises: the telescopic structure; the telescopic component is connected with one end of the telescopic structure and comprises a flexible lens; an image sensor corresponding to the flexible lens.

Compared with the prior art, the technical scheme of the invention has the following advantages:

in the telescopic structure provided in the embodiment of the present invention, the first actuator includes: a first non-stretching layer over the first upper electrode, the second actuator comprising: the second non-telescopic layer is positioned below the second lower electrode; alternatively, the first actuator further comprises: a first non-stretching layer located below the first lower electrode; the second actuator further includes: and the second non-telescopic layer is positioned above the second upper electrode. When the telescopic structure works, the bottom surface and the top surface of the first piezoelectric film generate a potential difference, the top surface and the bottom surface of the second piezoelectric film generate a potential difference, under the action of electrostrictive effect, the first piezoelectric film and the second piezoelectric film can stretch and contract in the transverse direction in the same way, but because the first non-telescopic layer and the second non-telescopic layer do not shrink in the transverse direction, the first piezoelectric film and the second piezoelectric film warp in opposite directions, so that the warp amounts of the first piezoelectric film and the second piezoelectric film in the longitudinal direction are mutually offset, the second actuator generally has two opposite ends along the extension direction of the second actuator, correspondingly, the transverse distance between the two ends is shortened, and the stretching amounts of the first piezoelectric film and the second piezoelectric film can be accurately controlled by controlling the voltage difference between the top surface and the bottom surface of the first piezoelectric film and the second piezoelectric film, correspondingly, the warping amount of the first actuator and the warping amount of the second actuator can be accurately controlled, so that the distance between the two ends of the second actuator can be accurately controlled, and the deformation amount of the telescopic structure can be accurately controlled.

In an alternative scheme, the first medium layer and the second medium layer are both located between the first actuator and the second actuator, the first medium layer is located at a first end of the second actuator, the second medium layer is located at a second end of the second actuator, the direction from the first end to the second end is a transverse direction, the first piezoelectric membrane and the second piezoelectric membrane can stretch and contract along the transverse direction under the action of an electrostrictive effect in the working process of the telescopic structure, compared with the embodiment of the invention in which only one actuator is arranged in the telescopic structure, the first actuator and the second actuator in the telescopic structure are spaced by the first medium layer and the second medium layer, and when the telescopic structure works, the shake or jitter in one actuator is not easily transmitted to the other actuator, so that the whole telescopic component is not easily shaken or jittered, so that the telescopic structure has a firm stretching effect.

Drawings

Fig. 1 to 5 are schematic structural views of an embodiment of a telescopic structure of the present invention;

fig. 6 to 17 are schematic structural views of steps in the first embodiment of the method of forming a telescopic structure of the present invention;

fig. 18 to 20 are schematic structural views of respective steps in a second embodiment of a method of forming a telescopic structure of the present invention;

fig. 21 to 24 are schematic structural views of respective steps in a third embodiment in a method of forming a telescopic structure of the present invention;

FIG. 25 is a schematic view showing the driving state of the telescopic structure of the present invention;

fig. 26 and 27 are schematic structural views of an embodiment of the electronic device of the present invention.

Detailed Description

The background art can know that the current camera module achieves the purpose of focusing by adjusting the distance between the zooming motor and the photosensitive chip, and in practical application, the zooming motor has some transmission parts of gears, so that stepless adjustment is difficult to realize, and the focal length of the camera module is difficult to accurately adjust.

In addition, the zoom motor is large in size, so that the whole focusing camera module is large in overall size, and the terminal equipment is not favorable for being designed towards a thinner direction.

Furthermore, in some electronic terminals, it is often necessary to make some components in the electronic terminals translate, move vertically or tilt, so as to realize some special functions, such as: optical anti-shake is realized.

An optical anti-shake method at present is to compensate displacement of an object imaging point by a lens in a manner of moving the lens or a lens, so as to achieve optical anti-shake. However, the size and weight of the lens are generally large, and it is increasingly difficult to achieve optical anti-shake by displacing the lens. The translation with a large stroke and a high accuracy is difficult to achieve with the current moving units or driving mechanisms.

In order to solve the technical problem, an embodiment of the present invention provides a telescopic structure, where the first actuator includes: a first non-stretching layer over the first upper electrode, the second actuator comprising: the second non-telescopic layer is positioned below the second lower electrode; alternatively, the first actuator further comprises: a first non-stretching layer located below the first lower electrode; the second actuator further includes: and the second non-telescopic layer is positioned above the second upper electrode. When the telescopic structure works, the bottom surface and the top surface of the first piezoelectric film generate a potential difference, the top surface and the bottom surface of the second piezoelectric film generate a potential difference, under the action of electrostrictive effect, the first piezoelectric film and the second piezoelectric film can stretch and contract in the transverse direction in the same way, but because the first non-telescopic layer and the second non-telescopic layer do not shrink in the transverse direction, the first piezoelectric film and the second piezoelectric film warp in opposite directions, so that the warp amounts of the first piezoelectric film and the second piezoelectric film in the longitudinal direction are mutually offset, the second actuator generally has two opposite ends along the extension direction of the second actuator, correspondingly, the transverse distance between the two ends is shortened, and the stretching amounts of the first piezoelectric film and the second piezoelectric film can be accurately controlled by controlling the voltage difference between the top surface and the bottom surface of the first piezoelectric film and the second piezoelectric film, correspondingly, the warping amount of the first actuator and the warping amount of the second actuator can be accurately controlled, so that the distance between the two ends of the second actuator can be accurately controlled, and the deformation amount of the telescopic structure can be accurately controlled.

In order to make the aforementioned objects, features and advantages of the embodiments of the present invention comprehensible, specific embodiments accompanied with figures are described in detail below.

Fig. 1 to 4 are schematic structural views of a first embodiment of the telescopic structure of the present invention. Fig. 2 is a cross-sectional view at AA of fig. 1, and fig. 3 is a cross-sectional view at BB of fig. 1.

The telescopic structure includes: a first actuator 100, the first actuator 100 including a first lower electrode 1101, a first piezoelectric film 1102 on the first lower electrode 1101, a first upper electrode 1103 on the first piezoelectric film 1102, and a first non-stretching layer 1104; a second actuator 200 suspended from the first actuator 100, the second actuator 200 comprising: a second lower electrode 2101, a second piezoelectric film 2102 placed on the second lower electrode 2101, a second upper electrode 2103 placed on the second piezoelectric film 2102, and a second non-elastic layer 2104.

In this embodiment, the first non-stretching layer 1104 is located above the first upper electrode 1103; the second non-stretching layer 2104 is located below the second lower electrode 2101. In other embodiments, the first non-stretching layer may also be located below the first lower electrode; the second non-stretching layer may also be located over the second upper electrode.

During the operation of the telescopic structure, under the action of electrostrictive effect, the first piezoelectric film 1102 and the second piezoelectric film 2102 can expand and contract equally in the transverse direction, but because the first non-telescopic layer 1104 and the second non-telescopic layer 2104 do not contract in the transverse direction, the first piezoelectric film 1102 and the second piezoelectric film 2102 are warped in opposite directions, so that the warping amounts of the first piezoelectric film 1102 and the second piezoelectric film 2102 in the longitudinal direction are mutually offset, generally along the extending direction of the second actuator 200, the second actuator 200 has two opposite ends, so that the transverse distance between the two ends is shortened, by controlling the magnitude of the potential difference, the stretching amounts of the first piezoelectric film 1102 and the second piezoelectric film 2102 can be accurately controlled, the warping amounts of the first actuator 100 and the second actuator 200 can be correspondingly accurately controlled, and further, the distance between the two ends in the second actuator 200 can be accurately controlled, the deformation amount of the telescopic structure can be accurately controlled.

In this embodiment, the first actuator 100 has a third end 30 (indicated by the first actuator 100 in the dashed line box) and a fourth end 40 (indicated by the first actuator 100 in the dashed line box) opposite to each other along the extending direction of the first actuator 100, and the third end 30 is in contact with the first dielectric layer 101.

When the first actuator 100 operates, the top surface and the bottom surface of the first piezoelectric film 1102 have a potential difference, the first piezoelectric film 1102 generates an electrostrictive effect under the action of the potential difference, the first non-stretchable layer 1104 is not easily stretched in the lateral direction under the action of the voltage difference, and the top surface of the first piezoelectric film 1102 is not easily stretched in the lateral direction compared with the bottom surface of the first piezoelectric film 1102 because the first non-stretchable layer 1104 is located on the top of the first piezoelectric film 1102, so that the third terminal 30 is easily warped downward.

The first lower electrode 1101 applies a potential to the bottom surface of the first piezoelectric film 1102.

In this embodiment, the material of the first lower electrode 1101 includes one or more of Al, Ti, Pt, Re, and Au.

The first upper electrode 1103 is configured to apply an electric potential to the top surface of the first piezoelectric film 1102, so that the top surface and the bottom surface of the first piezoelectric film 1102 have a potential difference, and the first piezoelectric film 1102 can expand and contract laterally under the electrostrictive effect.

In this embodiment, the material of the first upper electrode 1103 includes one or more of Al, Ti, Pt, Re, and Au.

The first piezoelectric film 1102 expands and contracts under electrostriction.

The material of first piezoelectric film 1102 includes: one or more of lead zirconate titanate, zinc oxide, aluminum nitride, zinc oxide, and gallium nitride.

In this embodiment, the first piezoelectric film 1102 is a thin film, and the thickness of the first piezoelectric film 1102 is on the order of micrometers.

In the present embodiment, when the potential difference between the top surface and the bottom surface of the first piezoelectric film 1102 is positive, the first piezoelectric film 1102 contracts. In other embodiments, the first piezoelectric film may contract when the potential difference between the bottom surface and the top surface of the first piezoelectric film is positive.

The first non-stretching layer 1104 is not easily electrostrictive.

In this embodiment, the material of the first non-stretching layer 1104 includes one or both of silicon and silicon nitride. In other embodiments, the first non-stretchable layer may also be a material that is not readily electrostrictive.

In the present embodiment, the second actuator has a first end 10 (indicated by the second actuator 200 in the dashed box) and a second end 20 (indicated by the second actuator 200 in the dashed box) opposite to each other in the extending direction of the second actuator.

Specifically, when the second actuator 200 operates, the top surface and the bottom surface of the second piezoelectric film 2102 have a potential difference, the second piezoelectric film 2102 generates an electrostrictive effect under the action of the potential difference, so that the second piezoelectric film 2102 expands and contracts laterally, the second non-stretchable layer 2104 is not easily contracted laterally, and because the second non-stretchable layer 2104 is located at the bottom of the second piezoelectric film 2102, the bottom surface of the second piezoelectric film 2102 is not easily contracted laterally compared with the top surface of the second piezoelectric film 2102, and the first end 10 is warped upwards. The upward warping component of the third end 30 of the first actuator 100 and the downward warping component of the third end 30 of the second actuator 200 cancel each other out, so that only a lateral displacement exists between the third end 30 and the first end 10.

The second lower electrode 2101 is used to apply an electric potential to the bottom surface of the second piezoelectric film 2102.

In this embodiment, the material of the second lower electrode 2101 includes one or more of Al, Ti, Pt, Re, and Au.

The second upper electrode 2103 is used to apply an electric potential to the top surface of the second piezoelectric film 2102, so that the top surface and the bottom surface of the second piezoelectric film 2102 have a potential difference, and thus the second piezoelectric film 2102 can expand and contract by an electrostrictive effect.

In this embodiment, the material of the second upper electrode 2103 includes one or more of Al, Ti, Pt, Re, and Au.

The second piezoelectric film 2102 expands and contracts by electrostriction.

The material of the second piezoelectric film 2102 includes: one or more of lead zirconate titanate, zinc oxide, aluminum nitride, zinc oxide, and gallium nitride.

In this embodiment, the second piezoelectric film 2102 is a thin film, and specifically, the thickness of the second piezoelectric film 2102 is in the order of micrometers.

In this embodiment, when the potential difference between the bottom surface and the top surface of the second piezoelectric film 2102 is positive, the second piezoelectric film 2102 contracts. In other embodiments, the second piezoelectric film contracts when the potential difference between the top surface and the bottom surface of the second piezoelectric film is positive.

The second non-stretching layer 2104 is not easily stretched under electrostriction.

The material of the second non-stretching layer 2104 includes one or both of silicon and silicon nitride. In other embodiments, the second non-stretchable layer may also be a material that is not readily electrostrictive.

As shown in fig. 4, each of the first lower electrode 1101 and the first upper electrode 1103 has a plurality of through grooves 109 (shown in fig. 4) spaced apart from each other and extending in a direction perpendicular to the lateral direction, and in the process of warping the first piezoelectric film 1102, the through grooves 109 make the first lower electrode 1101 and the first upper electrode 1103 less likely to prevent warping of the first piezoelectric film 1102.

It should be noted that, the second lower electrode 2101 and the second upper electrode 2103 each have a plurality of spaced through grooves 109 (as shown in fig. 4) extending in a direction perpendicular to the transverse direction, and in the process of warping the second piezoelectric film 2102, the through grooves 109 make the second lower electrode 2101 and the second upper electrode 2103 less likely to hinder the warping of the second piezoelectric film 2102.

Note that the second actuator 200 is disposed in parallel with the first actuator 100.

The second actuator 200 is disposed in parallel with the first actuator 100, and when the telescopic structure is operated, it is advantageous to make the third end 30 and the first end 10 telescopic only in the transverse direction, and to make the longitudinal direction perpendicular to the transverse direction, and there is no movement component in the longitudinal direction.

In the telescopic structure provided by the implementation of the present invention, the first dielectric layer 101 and the second dielectric layer 102 are both located between the first actuator 100 and the second actuator 200, the first dielectric layer 101 is located at the first end 10 of the second actuator 200, the second dielectric layer 102 is located at the second end 20 of the second actuator 200, and the direction from the first end 10 to the second end 20 is taken as the transverse direction, during the operation of the telescopic structure, a potential difference is generated between the bottom surface and the top surface of the first piezoelectric film 1102, and a potential difference is generated between the top surface and the bottom surface of the second piezoelectric film 2102, under the action of the electrostrictive effect, the first piezoelectric film 1102 and the second piezoelectric film 2102 can expand and contract along the transverse direction, by controlling the potential difference generated between the bottom surface and the top surface of the first piezoelectric film 1102 and the second piezoelectric film 2102, the expansion and contraction amount of the first piezoelectric film 1102 and the second piezoelectric film 2102 can be accurately controlled, and accordingly the expansion and contraction amount of the first actuator 100 and the second actuator 200 can be accurately controlled, that is, the deformation of the telescopic structure can be precisely controlled. Compared with the telescopic structure with only one actuator, the first actuator 100 and the second actuator 200 in the telescopic structure are separated by the first medium layer 101 and the second medium layer 102, and when the telescopic structure works, shaking or shaking of one actuator is not easily transmitted to the other actuator, so that the whole telescopic component is not easily shaken or shaken, and the telescopic structure has stable stretching effect.

When the telescopic structure works, the first dielectric layer 101 and the second dielectric layer 102 electrically isolate the second upper electrode 2103 from the first lower electrode 1101, so that the second upper electrode 2103 and the first lower electrode 1101 have stable electric potentials, and the second upper electrode 2103 and the second lower electrode 2101 have stable electric potential differences, which is beneficial to enabling the first actuator 100 and the second actuator 200 to complete preset warping.

A first dielectric layer 101 between the first actuator 100 and the second actuator 200, the first dielectric layer 101 being located at the first end 10; a second dielectric layer 102 between the second actuator 200 and the first actuator 100, the second dielectric layer 102 being at the location of the second end 20.

The first dielectric layer 101 is also used to fix the third terminal 30 and the first terminal 10 together, and the third terminal 30 and the first terminal 10 can be simultaneously extended and contracted during the operation of the telescopic structure.

In this embodiment, the first dielectric layer 101 is made of an insulating material. The first dielectric layer 101 insulates the third terminal 30 and the first terminal 10 from each other.

In this embodiment, the material of the first dielectric layer 101 includes one or more of silicon nitride, silicon oxynitride, silicon carbide nitride, boron nitride boron, and boron nitride silicon carbide. In other embodiments, the first dielectric layer may further include a DAF film.

The first medium layer 101 is also used for connecting to the member to be stretched.

Second dielectric layer 102 also serves to secure fourth end 40 and second end 20 together, and fourth end 40 and second end 20 are capable of simultaneous expansion and contraction during operation of the telescopic structure.

In this embodiment, the second dielectric layer 102 is made of an insulating material. The second dielectric layer 102 insulates the fourth terminal 40 and the second terminal 20 from each other.

In this embodiment, the material of the second dielectric layer 102 includes one or more of silicon nitride, silicon oxynitride, silicon carbide nitride, boron nitride boron silicon, and boron nitride silicon carbide. In other embodiments, the second dielectric layer may further include a DAF film.

In this embodiment, the first actuator 100 includes a first piezoelectric film 1102 and the second actuator 200 includes a second piezoelectric film 2102.

In this embodiment, it should be noted that the second actuator 200 is shorter than the first actuator 100, and the fourth end 40 of the second actuator 200 is exposed. Exposing the fourth end 40 of the second actuator 200 prepares for the subsequent formation of a first interconnect structure connected to the first lower electrode 1101, and prepares for a second interconnect structure connected to the first upper electrode 1103, which reduces the process difficulty of the first interconnect structure and the second interconnect structure.

The extending structure further comprises: a fifth dielectric layer 112 on the fourth terminal 40, the fifth dielectric layer 112 contacting the second dielectric layer 102; a fourth dielectric layer 111 on the fifth dielectric layer 112 and on the second end 20. The first opening 103 is located at the fourth end 40, and the first opening 103 penetrates through the fifth dielectric layer 112, the fourth dielectric layer 111, the first non-stretching layer 1104, the first upper electrode 1103 and the first piezoelectric film 1102, and exposes the first lower electrode 1101. The first opening 103 exposes the first lower electrode 1101 in preparation for the subsequent formation of a first interconnect structure connected to the first lower electrode 1101. The second opening 104 is located at the fourth end 40, and the second opening 104 penetrates through the fifth dielectric layer 112, the fourth dielectric layer 111 and the first non-stretching layer 1104, so as to expose the first upper electrode 1103. The second opening 104 exposes the first upper electrode 1103 in preparation for the subsequent formation of a second interconnect structure connected to the first upper electrode 1103. The third opening 105 is located at the second end 20, and the third opening 105 penetrates through the fourth dielectric layer 111, the second upper electrode 2103 and the second piezoelectric film 2102 to expose the second lower electrode 2101. The third opening 105 exposes the second lower electrode 2101 in preparation for the subsequent formation of a second interconnect structure connected to the second lower electrode 2101. The fourth opening 106 is located at the position of the second end 20, and the fourth opening 106 penetrates through the fourth dielectric layer 111 to expose the second upper electrode 2103. The fourth opening 106 exposes the second upper electrode 2103 in preparation for the subsequent formation of a first interconnect structure connected to the second upper electrode 2103.

Wherein the first opening 103 and the second opening 104 both function as a first actuator opening and the third opening 105 and the fourth opening 106 both function as a second actuator opening.

It should be noted that, referring to fig. 5, in another embodiment, the first actuator 100 includes a plurality of first piezoelectric films 1102; the first actuator 100 further includes: a first metal layer 1105 located between the first piezoelectric films 1102; the second actuator 200 includes a plurality of the second piezoelectric films 2102; the second actuator 200 further includes: and a second metal layer 2105 located between the second piezoelectric films 2102.

When the telescopic structure operates, an electric signal is applied to the first upper electrode 1103 and the first lower electrode 1101, so that the bottom surface and the bottom surface of the first piezoelectric film 1102 have a potential difference, and ions with opposite charges are respectively collected on the top surface and the bottom surface of the first metal layer 1105, so that the first piezoelectric film 1102 is subjected to an electrostrictive effect; an electric signal is applied to the second upper electrode 2103 and the second lower electrode 2101, so that the bottom surface and the bottom surface of the second piezoelectric film 2102 have a potential difference, and ions of opposite charges are collected on the top surface and the bottom surface of the second metal layer 2105, respectively, so that the first piezoelectric film 1102 is subjected to an electrostrictive effect.

A first opening (not shown in fig. 5) located at the fourth end 40, where the first opening penetrates through the fifth dielectric layer 112, the fourth dielectric layer 111, the first non-stretching layer 1104, the first upper electrode 1103, the first metal layer 1105 and the first piezoelectric film 1102, and exposes the first lower electrode 1101.

A second opening (not shown in fig. 5) located at the fourth end 40, wherein the second opening penetrates through the fifth dielectric layer 112, the fourth dielectric layer 111 and the first non-stretching layer 1104, and exposes the first upper electrode 1103.

A third opening (not shown in fig. 5) located at the second end 20, wherein the third opening penetrates through the fourth dielectric layer 111, the second upper electrode 2103, the second metal layer 2105 and the second piezoelectric film 2102 to expose the second lower and upper electrodes 2101.

A fourth opening (not shown in fig. 5) at the position of the second end 20, wherein the fourth opening penetrates through the fourth dielectric layer 111 to expose the second upper electrode 2103.

Wherein the first and second openings are both first actuator openings and the third and fourth openings are both second actuator openings.

It should be noted that, in other embodiments, the telescopic structure further includes: a fifth opening (not shown) located at the fourth end 40, where the fifth opening penetrates through the fifth dielectric layer, the fourth dielectric layer, the first non-stretching layer, the first upper electrode, and the first piezoelectric film, and exposes the first metal layer.

And a sixth opening (not shown) at the second end 20, wherein the sixth opening penetrates through the fourth dielectric layer, the second upper electrode and the second piezoelectric film to expose the second metal layer.

When the first piezoelectric film on the upper surface of the first metal layer contracts under the action of positive voltage and the first piezoelectric film on the lower surface of the first metal layer contracts under the action of negative voltage, when positive potential is applied to the first upper electrode, negative potential is applied to the first metal layer and positive potential is applied to the first lower electrode, the first piezoelectric films are all contraction characteristics, and at the moment, the first actuator is warped downwards; when the first piezoelectric film on the lower surface of the second metal layer contracts under the action of positive voltage and the first piezoelectric film on the upper surface of the first metal layer contracts under the action of negative voltage, when positive potential is applied to the second upper electrode, negative potential is applied to the second metal layer and positive potential is applied to the first lower electrode, the first piezoelectric films are all contraction characteristics, and at the moment, the second actuator warps downwards. Therefore, the amounts of warpage of the first and second actuators in the longitudinal direction cancel each other out, so that the distance between both ends in the extending direction of the second actuator is shortened.

When the first piezoelectric film on the upper surface of the first metal layer contracts under the action of negative voltage and the first piezoelectric film on the lower surface of the first metal layer contracts under the action of positive voltage, the first piezoelectric film has the contraction characteristic when negative potential is applied to the first upper electrode, positive potential is applied to the first metal layer and negative potential is applied to the first lower electrode, and the first actuator warps downwards at the moment; when the first piezoelectric film on the lower surface of the second metal layer contracts under the action of negative voltage and the first piezoelectric film on the lower surface of the first metal layer contracts under the action of positive voltage, the second upper electrode is applied with negative potential, the second metal layer is applied with positive potential, and the first lower electrode is applied with negative potential, the first piezoelectric films are all contraction characteristics, and at the moment, the second actuator is warped downwards. Therefore, the amounts of warpage of the first and second actuators in the longitudinal direction cancel each other out, so that the distance between both ends in the extending direction of the second actuator is shortened.

In this embodiment, the telescopic structure further includes: and an insulating layer 107 on sidewalls of the first and second actuator openings.

The insulating layer 107 is used for making the first interconnection structure formed in the first opening 103 and the fourth opening 106 not easily contact with the first lower electrode layer 1101 and the second upper electrode layer 2103, and is also used for making the second interconnection structure formed in the second opening 104 and the third opening 105 not easily contact with the second lower electrode 2101 and the first upper electrode 1103, so that stable potential differences can be generated between the first upper electrode 1103 and the first lower electrode 1101, and between the second upper electrode 2103 and the second lower electrode 2101, which is beneficial to improving the electrical performance of the telescopic structure.

The material of the insulating layer 107 includes: one or more of silicon nitride, silicon oxynitride, and silicon oxycarbide.

The extending structure further comprises: a third dielectric layer 113 located at the bottom of the first actuator 100 and located right below the fourth terminal 40 and the second terminal 20; and a substrate 114 located at the bottom of the third dielectric layer 113, wherein the substrate 114 is fixedly connected with the first actuator 100 through the third dielectric layer 113.

The third dielectric layer 113 is used to electrically isolate the first actuator 100 from the substrate 114, so that the first lower electrode 1101 can have a stable potential when the telescopic structure is operated, and thus a stable potential difference exists between the first lower electrode 1101 and the first upper electrode 1103.

In this embodiment, the material of the third dielectric layer 113 includes one or more of silicon nitride, silicon oxynitride, silicon carbide nitride, boron nitride boron, and boron nitride silicon carbide.

The substrate 114 provides a working space for the telescoping structure to telescope.

The substrate 114 is a silicon substrate, in other embodiments, the substrate may also be germanium, silicon carbide, gallium arsenide, indium gallium arsenide, or other materials, and the substrate may also be a silicon-on-insulator substrate or another type of substrate such as a germanium-on-insulator substrate.

Correspondingly, the embodiment of the invention also provides a forming method of the telescopic structure. Referring to fig. 6 to 17, schematic structural diagrams corresponding to steps in the first embodiment of the method for forming a telescopic structure of the present invention are shown.

Referring to fig. 6 to 8, a first actuator 100 is formed, the first actuator 100 including: a first lower electrode 1101, a first piezoelectric film 1102 on the first lower electrode 1101, and a first upper electrode 1103 on the first piezoelectric film 1102.

In this embodiment, in the step of forming the first actuator 100, the first actuator 100 further includes: the first non-stretching layer 1104 is disposed over the first upper electrode 1103. In other embodiments, in the step of forming the first actuator, the first actuator further includes: a first non-stretching layer located below the first lower electrode;

in the working process of the telescopic structure, the top surface and the bottom surface of the first piezoelectric film 1102 generate potential differences, and under the action of electrostrictive effect, the first piezoelectric film 1102 can stretch and contract in the transverse direction, but because the first non-telescopic layer 1104 cannot shrink in the transverse direction, the first piezoelectric film 1102 warps towards the surface departing from the first non-telescopic layer 1104, and the stretching amount of the first piezoelectric film 1102 can be accurately controlled by controlling the magnitude of the potential difference.

In this embodiment, the first lower electrode 1101 is formed by a Physical Vapor Deposition (PVD) process, a Chemical Vapor Deposition (CVD) process, or a Molecular Beam Epitaxy (MBE) process.

When the telescopic structure operates, the first piezoelectric film 1102 is electrostrictively under the action of a potential difference between the first lower electrode 1101 and the first upper electrode 1103.

In this embodiment, a first piezoelectric film 1102 is formed on a first lower electrode 1101.

In this embodiment, the first piezoelectric film 1102 is formed by a physical vapor deposition process, a chemical vapor deposition process, or a molecular beam epitaxy process.

In this embodiment, the first piezoelectric film 1102 is a thin film, and specifically, the thickness of the first piezoelectric film 1102 is on the order of micrometers.

In this embodiment, a first upper electrode 1103 is formed on the first piezoelectric film 1102.

In this embodiment, the first upper electrode 1103 is formed by a physical vapor deposition process, a chemical vapor deposition process, or a molecular beam epitaxy process.

It should be noted that in the step of forming the first actuator 100, the first actuator 100 has a third end 30 and a fourth end 40 opposite to the third end 30 along the extending direction of the first actuator 100. The fourth terminal 40 provides for the subsequent formation of an interconnect structure that connects the first upper electrode 1103 and the first lower electrode 1101.

In this embodiment, a first non-stretching layer 1104 is formed on the first upper electrode 1103.

In this embodiment, when the telescopic structure works, the first non-telescopic layer 1104 is not easily contracted in the transverse direction, and because the first non-telescopic layer 1104 is located on the top of the first piezoelectric film 1102, the top surface of the first piezoelectric film 1102 is not easily contracted in the transverse direction compared with the bottom surface of the first piezoelectric film 1102, so that the third end 30 is easily warped downward.

In this embodiment, the first non-stretching layer 1104 is formed by a physical vapor deposition process, a chemical vapor deposition process, or a molecular beam epitaxy process.

Note that, each of the first lower electrode 1101 and the first upper electrode 1103 has a plurality of through grooves 109 (as shown in fig. 4) spaced apart from each other and extending in a direction perpendicular to the lateral direction, and in a process of warping the first piezoelectric film 1102, the through grooves 109 make the first lower electrode 1101 and the first upper electrode 1103 less likely to prevent warping of the first piezoelectric film 1102.

The method for forming the telescopic structure further comprises the following steps: before forming the first actuator 100, providing a substrate 300; forming a third dielectric layer 113 on the substrate 300; a first sacrificial layer 301 is formed on the substrate 300 where the third dielectric layer 113 is exposed.

The third dielectric layer 113 and the first sacrificial layer 301 electrically isolate the first actuator 100 from the substrate 300, so that the first lower electrode 1101 can have a stable potential when the telescopic structure operates, and a stable potential difference is generated between the first lower electrode 1101 and the first upper electrode 1103.

In this embodiment, the material of the first sacrificial layer 301 includes silicon oxide.

Accordingly, the step of forming the first actuator 100 includes: a first lower electrode 1101 is formed on the third dielectric layer 113 and a portion of the first sacrificial layer 301 adjacent to the third dielectric layer 113.

Referring to fig. 9, a first dielectric layer 101 and a second dielectric layer 102 are formed separately on the first actuator 100, the first dielectric layer 101 being located at the third terminal 30, the second dielectric layer 102 being located between the third terminal 30 and the fourth terminal 40 and adjacent to the fourth terminal 40.

The first medium layer 101 and the second medium layer 102 separate the first actuator 100 from the second actuator 200, and when the telescopic structure is in operation, the shake or vibration of one actuator is not easily transmitted to the other actuator, so that the whole telescopic component is not easily shaken or vibrated, and the telescopic structure has stable stretching effect. In addition, when the telescopic structure works, the first dielectric layer 101 and the second dielectric layer 102 electrically isolate the second upper electrode 2103 from the first lower electrode 1101, so that the second upper electrode 2103 and the first lower electrode 1101 have stable electric potentials, and the second upper electrode 2103 and the second lower electrode 2101 have stable electric potential differences, which is beneficial to enabling the first actuator 100 and the second actuator 200 to complete the preset warping.

In this embodiment, the material of the first dielectric layer 101 and the second dielectric layer 102 includes one or more of silicon nitride, silicon oxynitride, silicon carbide nitride, boron nitride boron silicon nitride, and boron nitride silicon carbide.

In the step of forming the second dielectric layer 102, the second dielectric layer 102 is located near the fourth end 40.

In this embodiment, the first dielectric layer 101 and the second dielectric layer 102 are formed in the same step, and the step of forming the first dielectric layer 101 and the second dielectric layer 102 includes: forming a first dielectric material film (not shown) on the first actuator 100 and the first sacrificial layer 301 exposed by the first actuator 100; the first dielectric material film is patterned, and the remaining first dielectric material film at the third end 30 of the first actuator 100 is used as a first dielectric layer 101, and the first dielectric material film at a position close to the fourth end 40 is used as a second dielectric layer 102.

In this embodiment, the first dielectric material film is formed by a Flowable Chemical Vapor Deposition (FCVD) process.

In the step of forming the second dielectric layer 102, a fifth dielectric layer 112 is further formed on the fourth terminal 40, and the fifth dielectric layer 112 is in contact with the second dielectric layer 102.

The fifth dielectric layer 112 electrically isolates the second actuator from the first actuator 100 during subsequent formation of the second actuator.

It should be noted that, because the first dielectric layer 101 and the second dielectric layer 102 are formed in one step, the thicknesses of the first dielectric layer 101 and the second dielectric layer 102 are the same, which is beneficial to enable the second actuator to be formed on the first dielectric layer 101 and the second dielectric layer 102 in parallel with the first actuator 100.

The second actuator is arranged in parallel with the first actuator 100, and when the telescopic structure works, the third end 30 and the first end 10 are beneficial to be telescopic only in the transverse direction, that is, the first medium layer 101 is telescopic only in the transverse direction, and no moving component exists in the transverse and vertical directions.

Referring to fig. 10, the method of forming the telescopic structure further includes: after the first dielectric layer 101 and the second dielectric layer 102 are formed, and before the second actuator 200 is formed, a second sacrificial layer 302 is formed on the first actuator 100 and the first sacrificial layer 301 where the first dielectric layer 101 and the second dielectric layer 102 are exposed.

Second sacrificial layer 302 provides a process foundation for forming second actuator 200.

In this embodiment, a flowable chemical vapor deposition process is used to form second sacrificial layer 302.

In this embodiment, the material of the second sacrificial layer 302 includes silicon oxide.

With continued reference to fig. 10, a second actuator 200 is formed on the first actuator 100, the second actuator 200 comprising: a second lower electrode 2101, a second piezoelectric film 2102 placed on the second lower electrode 2101, and a second upper electrode 2103 placed on the second piezoelectric film 2102.

In this embodiment, in the step of forming the second actuator 200, the second actuator 200 further includes: and a second non-stretching layer 2104 positioned below the second lower electrode 2101. In other embodiments, in the step of forming the second actuator, the second actuator further includes: and the second non-telescopic layer is positioned above the second upper electrode.

In the step of forming the second actuator 200, the second actuator 200 has a first end 10 and a second end 20 along an extending direction of the second actuator 200, the first end 10 is in contact with the top surface of the first dielectric layer 101, and the second end 20 is in contact with the top surface of the second dielectric layer 102.

In the working process of the telescopic structure, under the action of an electrostrictive effect, the first piezoelectric film 1102 and the second piezoelectric film 2102 can expand and contract in the same direction along the transverse direction, but because the first non-telescopic layer 1104 and the second non-telescopic layer 2104 cannot contract in the transverse direction, the first piezoelectric film 1102 and the second piezoelectric film 2102 warp in opposite directions, so that the longitudinal warping amounts of the first piezoelectric film 1102 and the second piezoelectric film 2102 cancel each other out, the transverse distance between the first end 10 and the second end 20 is shortened, the stretching amounts of the first piezoelectric film 1102 and the second piezoelectric film 2102 can be accurately controlled by controlling the magnitude of the potential difference, the warping amounts of the first actuator 100 and the second actuator 200 can be correspondingly accurately controlled, the distance between the first end 10 and the second end 20 can be further favorably accurately controlled, and the deformation amount of the telescopic structure can be favorably accurately controlled.

Specifically, in the working process of the telescopic structure, both the top surface and the bottom surface of the second piezoelectric film 2102 generate potential differences, and under the action of electrostrictive effect, the second piezoelectric film 2102 can stretch and contract in the transverse direction, but because the second non-stretching layer 2104 cannot stretch and contract in the transverse direction, the second piezoelectric film 2102 warps towards the surface departing from the second non-stretching layer 2104, and the stretching amount of the second piezoelectric film 2102 can be accurately controlled by controlling the magnitude of the potential differences.

In this embodiment, the second non-stretching layer 2104 is formed on the first dielectric layer 101, the second dielectric layer 102, and the second sacrificial layer 302 between the first dielectric layer 101 and the second dielectric layer 102.

In this embodiment, the material of the second non-stretching layer 2104 includes one or both of silicon and silicon nitride. In other embodiments, the second non-stretchable layer may also be a material that is not readily electrostrictive.

In this embodiment, the second non-stretching layer 2104 is formed by a physical vapor deposition process, a chemical vapor deposition process, or a molecular beam epitaxy process.

In this embodiment, the second lower electrode 2101 is formed on the second non-stretching layer 2104.

In this embodiment, the second lower electrode 2101 is formed by a physical vapor deposition process, a chemical vapor deposition process, or a molecular beam epitaxy process.

When the telescopic structure operates, the second piezoelectric film 2102 expands and contracts in the transverse direction under the action of a potential difference between the second lower electrode 2101 and the second upper electrode 2103.

In this embodiment, a second piezoelectric film 2102 is formed over the second lower electrode 2101.

The material of the second piezoelectric film 2102 includes: one or more of lead zirconate titanate, zinc oxide, aluminum nitride, zinc oxide, and gallium nitride. In this embodiment, the second piezoelectric film 2102 is formed by a physical vapor deposition process, a chemical vapor deposition process, or a molecular beam epitaxy process.

The second upper electrode 2103 is used to apply an electric potential to the top surface of the second piezoelectric film 2102, so that the top surface and the bottom surface of the second piezoelectric film 2102 have a potential difference, and thus the second piezoelectric film 2102 can expand and contract in the lateral direction by an electrostrictive effect.

In this embodiment, the second upper electrode 2103 is formed on the second piezoelectric film 2102. In this embodiment, the material of the second upper electrode 2103 includes one or more of Al, Ti, Pt, Re, and Au.

In this embodiment, the second upper electrode 2103 is formed by a physical vapor deposition process, a chemical vapor deposition process, or a molecular beam epitaxy process.

As shown in fig. 11, the method for forming the telescopic structure further includes: after forming second actuator 200, fourth dielectric layer 111 is formed on fifth dielectric layer 112 and on second end 20 before first sacrificial layer 301 and second sacrificial layer 302 are removed.

The fourth dielectric layer 111 provides for the subsequent formation of a first actuator opening and a second actuator opening.

The forming step of the fourth dielectric layer 111 includes: forming a third dielectric material film on the fifth dielectric layer 112, the second actuator 200 and the second sacrificial layer 302; the third dielectric material film is patterned, and the remaining third dielectric material film on the fifth dielectric layer 112 and the second end 20 is used as the fourth dielectric layer 111.

In this embodiment, the material of the fourth dielectric layer 111 includes silicon oxide.

As shown in fig. 12, a third sacrificial layer 303 is formed on the second actuator 200 and the second sacrificial layer 302 where the fourth dielectric layer 111 is exposed.

The third sacrificial layer 303 serves to protect the second actuator 200 from damage during subsequent formation of the first and second actuator openings.

In this embodiment, the material of the third sacrificial layer 303 includes silicon oxide.

As shown in fig. 13 to 15, in the step of forming the first actuator 100, the first actuator 100 has a first piezoelectric film 1104; in the step of forming the second actuator 200, the second actuator 200 has a second piezoelectric film 2104.

Etching the fifth dielectric layer 112 and the fourth dielectric layer 111, the first non-stretching layer 1104, the first upper electrode 1103 and the first piezoelectric film 1102 on the fifth dielectric layer 112 to form a first opening 103 exposing the first lower electrode 1101; etching the fifth dielectric layer 112 and the fourth dielectric layer 111 on the fifth dielectric layer 112 to form a second opening 104 exposing the first upper electrode 1103, wherein the second opening 104 and the first opening 103 are both used as first actuator openings; etching the fourth dielectric layer 111 on the second end 20 to form a fourth opening 106 exposing the second upper electrode 2103; and etching the fourth dielectric layer 111, the second upper electrode 2103 and the second piezoelectric film 2104 on the second end 20 to form a third opening 105 exposing the second lower electrode 2101, wherein the third opening 105 and the fourth opening 106 are both used as second actuator openings.

The first opening 103 exposes the first lower electrode 1101 in preparation for the subsequent formation of a first interconnect structure connected to the first lower electrode 1101.

The second opening 104 exposes the first upper electrode 1103 in preparation for the subsequent formation of a second interconnect structure connected to the first upper electrode 1103.

The third opening 105 exposes the second lower electrode 2101 in preparation for the subsequent formation of a second interconnect structure connected to the second lower electrode 2101.

The fourth opening 106 exposes the second upper electrode 2103 in preparation for the subsequent formation of a first interconnect structure connected to the second upper electrode 2103.

In this embodiment, the first opening 103 is formed by a dry etching process. The dry etching process has anisotropic etching characteristics and better etching profile controllability, and is beneficial to enabling the appearance of the first opening 200 to meet the process requirements.

The second opening 104, the third opening 105, and the fourth opening 106 are also formed by a dry etching process, which is not described herein again.

In other embodiments, in the step of forming the first actuator, the first actuator has a plurality of first piezoelectric films; a first metal layer is formed between the first piezoelectric films; forming the second actuator having a plurality of second piezoelectric films; a second metal layer is formed between the second piezoelectric films.

When the telescopic structure operates, ions of opposite charges are respectively collected on the top surface and the bottom surface of the first metal layer 1105, so that the first piezoelectric film 1102 still receives the electrostrictive effect, and ions of opposite charges are respectively collected on the top surface and the bottom surface of the second metal layer 2105, so that the first piezoelectric film 1102 still receives the electrostrictive effect.

Etching the fifth dielectric layer and a fourth dielectric layer, a first non-stretching layer, a first upper electrode, a first metal layer and a first piezoelectric film on the fifth dielectric layer to form a first opening exposing the first lower electrode; etching the fifth dielectric layer, the fourth dielectric layer on the fifth dielectric layer and the first non-telescopic layer to form a second opening exposing the first upper electrode, wherein the second opening and the first opening are both used as first actuator openings; etching the fourth dielectric layer on the second end 20 to form a fourth opening exposing the second upper electrode; and etching the fourth dielectric layer, the second upper electrode, the second metal layer and the second piezoelectric film on the second end 20 to form a third opening exposing the second lower electrode, wherein the third opening and the fourth opening are both used as second actuator openings.

In other embodiments, the step of forming the telescopic structure further comprises: etching the fifth dielectric layer, the fourth dielectric layer, the first non-stretching layer, the first upper electrode and the first piezoelectric film on the fourth end to form a fifth opening exposing the first metal layer; and etching the fourth dielectric layer, the second upper electrode and the second piezoelectric film on the second end 20 to form a sixth opening exposing the second metal layer.

The method for forming the telescopic structure further comprises the following steps: after the first and second actuator openings are formed, an insulating layer 107 is formed on the sidewalls of the first and second actuator openings.

The step of forming the insulating layer 107 includes: forming a layer of insulating material covering the first and second actuator openings; the insulating material layer at the bottom of the first and second actuator openings is removed, leaving the insulating material layer at the sidewalls of the first and second actuator openings as an insulating layer 107.

In this embodiment, the insulating material layer is formed by using a physical vapor deposition process, a chemical vapor deposition process, or a molecular beam epitaxy process.

In this embodiment, the material of the insulating layer 107 includes one or more of silicon nitride, silicon oxynitride, and silicon oxycarbide.

As shown in fig. 16, the method of forming the telescopic structure further includes: after the second actuator 200 is formed, the base 300 is etched from the side of the base 300 opposite to the first actuator 100 to expose the first sacrificial layer 301, and the remaining base 300 serves as the formation substrate 114.

In this embodiment, the substrate 114 is formed by etching the base 300 by a dry etching process. The dry etching process has anisotropic etching characteristics and good etching profile controllability, and is beneficial to enabling the morphology of the substrate 114 to meet the process requirements.

As shown in fig. 17, the method of forming the telescopic structure further includes: after the insulating layer 107 is formed, the first sacrificial layer 301, the second sacrificial layer 302, and the third sacrificial layer 303 are removed.

In this embodiment, a sacrificial layer release process is used to remove the first sacrificial layer 301, the second sacrificial layer 302, and the third sacrificial layer 303.

Specifically, the sacrificial layer release process is a wet etching process, and the wet etching process has a high etching rate, is simple to operate and has low process cost.

In this embodiment, the material of the first sacrificial layer 301, the second sacrificial layer 302, and the third sacrificial layer 303 includes silicon oxide. Accordingly, the wet etching solution includes a hydrogen fluoride solution.

Referring to fig. 18 to 20, there are shown schematic structural views of respective steps in a second embodiment of a stretchable structure forming method. The same parts of this embodiment as those of the first embodiment are not described herein again, and the following parts are not used in this embodiment: and forming a first dielectric layer 401 and a second dielectric layer 402.

As shown in fig. 18, a first dielectric layer 401 and a second dielectric layer 402 are formed on the first actuator 400 using a dispensing process. The glue dispensing process can greatly improve the production efficiency, reduce the scrapping of products, save raw materials and achieve the aim of improving the economic efficiency.

In this embodiment, the first dielectric layer 401 and the second dielectric layer 402 are formed in one step.

In the step of forming the first dielectric layer 401 and the step of forming the second dielectric layer 402, the thicknesses of the second dielectric layer 402 and the first dielectric layer 401 are the same.

Specifically, the material of the first dielectric layer 401 includes a DAF film. The material of the second dielectric layer 402 includes a DAF film.

As shown in fig. 19, the step of forming the second actuator 500 suspended above the first actuator 400 includes: the first end 10 of the second actuator 500 is brought into contact with the top surface of the first dielectric layer 401 and the second end 20 of the second actuator 500 is brought into contact with the top surface of the second dielectric layer 102 using an adhesive process. The gluing process is compatible with the existing packaging process, and the process is simple.

The method for forming the telescopic structure further comprises the following steps: a sixth dielectric layer 403 is formed on the first end 10 by a dispensing process.

The sixth medium layer 403 is ready for subsequent connection to the telescoped components.

Referring to fig. 21 to 24, there are shown schematic structural views of respective steps in a third embodiment of a stretchable structure forming method. The same parts of this embodiment and the second embodiment are not described herein again, and the following parts are not used in the first embodiment:

the step of forming the first dielectric layer 601 and the second dielectric layer 602 on the first actuator 600 includes: as shown in fig. 21, a first dispensing process is used to form a bottom dielectric layer 601 at the third end 30 of the first actuator 600; as shown in fig. 23, after the first dispensing process, a second dielectric layer 602 is formed at a position close to the fourth end 40 of the first actuator 600 by a second dispensing process; as shown in fig. 24, after forming the second dielectric layer 602, a top dielectric layer 603 is formed on the bottom dielectric layer 601 by a first dispensing process, and the top dielectric layer 603 and the bottom dielectric layer 601 are used to form a first dielectric layer 604.

Note that the thickness of the second dielectric layer 602 is equal to the distance from the bottom surface of the bottom dielectric layer 601 to the top surface of the top dielectric layer 603.

The step of forming the second actuator 700 suspended above the first actuator 600 includes: the first end 10 of the second actuator 700 is brought into contact with the top surface of the first dielectric layer 604 and the second end 20 of the second actuator 700 is brought into contact with the top surface of the second dielectric layer 602 using an adhesive process.

The method for forming the telescopic structure includes: after the bottom dielectric layer 601 is formed, the stretched member is formed on the bottom dielectric layer 601 before the top dielectric layer 603 is formed. The telescopic structure can enable the telescopic structure to provide more stable stretching force for the telescopic part in the working process.

Correspondingly, the invention further provides a driving method of the telescopic structure, which is used for driving the telescopic structure of the embodiment. Referring to fig. 25, a schematic structural diagram corresponding to each step in an embodiment of the driving method of the present invention is shown.

The initial driving process is performed so that the first upper electrode 1103, the first lower electrode 1101, the second upper electrode 2103, and the second lower electrode 2101 are all in a floating state.

After the initial driving process, a displacement process is performed, where the displacement process includes applying a first driving signal to the first lower electrode 1101, applying a second driving signal to the first upper electrode 1103, and causing a potential difference to occur between the top surface and the bottom surface of the first piezoelectric film 1102, and causing electrostriction of the first piezoelectric film 1102 by a potential difference between the top surface and the bottom surface of the first piezoelectric film 1102; a third drive signal is applied to the second lower electrode 2101, a fourth drive signal is applied to the second upper electrode 2103, a potential difference is generated between the top surface and the bottom surface of the second piezoelectric film 2102, the potential difference generated between the top surface and the bottom surface of the second piezoelectric film 2102 causes electrostriction of the second piezoelectric film 2102, and the potential difference between the top surface and the bottom surface of the second piezoelectric film 2102 is the same as the potential difference between the top surface and the bottom surface of the first piezoelectric film 1102.

In the working process of the telescopic structure provided by the embodiment of the present invention, under the action of the electrostrictive effect, the first piezoelectric film 1102 and the second piezoelectric film 2102 can expand and contract equally in the transverse direction, but because the first non-stretchable layer 1104 and the second non-stretchable layer 2104 do not contract in the transverse direction, the first piezoelectric film 1102 and the second piezoelectric film 2102 are warped in opposite directions, so that the amounts of warping of the first piezoelectric film 1102 and the second piezoelectric film 2102 in the longitudinal direction are offset with each other, generally along the extending direction of the second actuator 200, the second actuator 200 has two opposite ends, accordingly, the transverse distance between the two ends is shortened, and by controlling the potential difference between the top surface and the bottom surface of the first piezoelectric film 1102 and the potential difference between the top surface and the bottom surface of the second piezoelectric film 2102, the amounts of stretching and stretching of the first piezoelectric film 1102 and the second piezoelectric film 2102 can be accurately controlled, accordingly, the warpage amount of the first actuator 100 and the second actuator 200 can be precisely controlled, which is advantageous for precisely controlling the distance between the two ends of the second actuator 200 and precisely controlling the deformation amount of the telescopic structure.

In this embodiment, the first driving signal and the fourth driving signal are the same, and the second driving signal and the third driving signal are the same. It is advantageous to make the voltage difference between the top surface and the bottom surface of first piezoelectric film 1102 equal to the voltage difference between the top surface and the bottom surface of second piezoelectric film 2101, and it is advantageous to make the amount of lateral contraction of first piezoelectric film 1102 under the effect of the voltage difference between first lower electrode 1101 and first upper electrode 1103 equal to the amount of lateral contraction of second lower electrode 2101 and second upper electrode 2103 of second piezoelectric film 2102. When the telescopic structure works, the telescopic structure can be conveniently stretched only in the transverse direction, and no moving component exists in the transverse and vertical direction.

In other embodiments, the first actuator comprises a plurality of the first piezoelectric films; the first actuator further includes: a first metal layer located between the first piezoelectric films; the second actuator includes a plurality of the second piezoelectric films; the second actuator further includes: a second metal layer located between the second piezoelectric films.

Executing initial driving processing to enable the first upper electrode, the first lower electrode, the second upper electrode and the second lower electrode to be in a floating state; after the initial driving process, performing a displacement process including: applying a first driving signal to the first lower electrode and a first upper electrode, applying a second driving signal to the first metal layer, and generating a potential difference between the top surface and the bottom surface of the first piezoelectric film, wherein the potential difference between the top surface and the bottom surface of the first piezoelectric film causes electrostriction of the first piezoelectric film; applying a third driving signal to the second lower electrode and the second upper electrode, and applying a fourth driving signal to the second metal layer, so that a potential difference is generated between the top surface and the bottom surface of the second piezoelectric film, and the potential difference generated between the top surface and the bottom surface of the second piezoelectric film causes the second piezoelectric film to generate the same electrostriction as the first piezoelectric film; the first drive signal and the third drive signal are the same, and the second drive signal and the fourth drive signal are the same.

Correspondingly, the embodiment of the invention also provides the electronic equipment. As shown in fig. 26 and 27, a schematic structural diagram of an embodiment of the electronic device of the present invention is shown.

The electronic device includes: a fixed platform (not shown); according to the telescopic structure provided by the embodiment of the invention, one end of the telescopic structure is connected with the fixed platform; and a telescopic member 20 connected to the other end of the telescopic structure.

Specifically, the extended/retracted member 20 includes a flexible lens, a flexible resistor, or a flexible capacitor. In this embodiment, the telescoped member 20 comprises a flexible lens.

The electronic device may be an intermediate component, such as: camera module, lens subassembly etc.. The electronic device may also be a terminal device, for example: an electronic device 800.

In this embodiment, the number of the telescopic structures is plural, and the plurality of telescopic structures are arranged around the telescopic member 20 at equal angles along the circumferential direction. The dotted circle is used to indicate the state before the telescopic member 20 is stretched by the telescopic structure.

It should be noted that the substrate 114 in the telescopic structure is connected to the fixed platform.

The telescopic structure provided by the embodiment of the invention can be used for stretching the telescopic part, so that the deformation of the telescopic structure can be accurately controlled, the size of the electronic equipment can be reduced while the focusing purpose is achieved, the terminal equipment can be designed towards a thinner direction, the process cost can be reduced, and the use experience of a user on the electronic equipment can be improved.

In other embodiments, the number of the telescopic structures is one or more, and one end of the telescopic structure is connected with the same end of the telescopic component. The telescopic structure enables the telescopic component to displace.

Correspondingly, an embodiment of the present invention further provides a camera module, including: the invention provides a telescopic structure; the telescopic component is connected with one end of the telescopic structure and comprises a flexible lens; and the image sensor corresponds to the flexible lens.

The telescopic part comprises a flexible lens, and the moved part is an image sensor; a lens assembly corresponding to the image sensor.

The telescopic part is a flexible lens, so that the telescopic part is beneficial to accurately controlling the deformation of the telescopic structure, the size of the electronic equipment is reduced while the focusing purpose is achieved, the terminal equipment is beneficial to being designed towards a thinner direction, the process cost is also beneficial to being reduced, and the use experience of a user on the electronic equipment is improved.

Specifically, the image sensor includes a CMOS image sensor or a CCD image sensor.

Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.

Claims

1. A telescoping structure, comprising:

a first actuator including a first lower electrode, a first piezoelectric film on the first lower electrode, a first upper electrode on the first piezoelectric film, and a first non-stretching layer;

a second actuator suspended from the first actuator, the second actuator comprising: a second lower electrode, a second piezoelectric film on the second lower electrode, a second upper electrode on the second piezoelectric film, and a second non-stretching layer;

the first non-telescopic layer is positioned above the first upper electrode, and the second non-telescopic layer is positioned below the second lower electrode; or the first non-telescopic layer is positioned below the first lower electrode, and the second non-telescopic layer is positioned above the second upper electrode.

2. The telescoping structure of claim 1, wherein the second actuator has opposite first and second ends in a direction of extension of the second actuator;

a first dielectric layer between the first and second actuators, the first dielectric layer being at the first end position;

a second dielectric layer between the second actuator and the first actuator, the second dielectric layer being at the second end position.

3. The telescopic structure of claim 1, wherein the first non-telescopic layer comprises one or both of silicon and silicon nitride; the material of the second non-stretching layer comprises one or two of silicon and silicon nitride.

4. The telescopic structure according to claim 2, wherein, in the direction of extension of the first actuator, the first actuator has opposite third and fourth ends, the third end being in contact with the first dielectric layer;

the second actuator exposes the fourth end.

5. The telescoping structure of claim 4, wherein said first actuator comprises a plurality of said first piezoelectric membranes; the first actuator further includes: a first metal layer located between the first piezoelectric films;

the second actuator includes a plurality of the second piezoelectric films; the second actuator further includes: a second metal layer located between the second piezoelectric films.

6. The telescopic structure of claim 1, wherein the material of the first piezoelectric film comprises: one or more of lead zirconate titanate, zinc oxide, aluminum nitride, zinc oxide, and gallium nitride;

the material of the second piezoelectric film includes: one or more of lead zirconate titanate, zinc oxide, aluminum nitride, zinc oxide, and gallium nitride.

7. The telescoping structure of claim 1, wherein the second actuator is disposed in parallel with the first actuator.

8. The telescoping structure of claim 2, wherein the material of the first dielectric layer comprises a DAF film; the material of the second dielectric layer comprises a DAF film;

alternatively, the first and second electrodes may be,

the material of the first dielectric layer comprises one or more of silicon nitride, silicon oxynitride, silicon carbide, silicon carbonitride, boron nitride and boron nitride silicon carbide; the material of the second dielectric layer comprises one or more of silicon nitride, silicon oxynitride, silicon carbide, silicon carbonitride, boron nitride and boron nitride silicon carbide.

9. The telescoping structure of claim 4, further comprising: the third dielectric layer is positioned at the bottom of the first actuator and is positioned right below the fourth end and the second end;

and the substrate is positioned at the bottom of the third dielectric layer and is fixedly connected with the first actuator through the third dielectric layer.

10. A method of forming a telescoping structure, comprising:

forming a first actuator, the first actuator comprising: a first lower electrode, a first piezoelectric film on the first lower electrode, and a first upper electrode on the first piezoelectric film;

forming a second actuator on the first actuator, the second actuator comprising: a second lower electrode, a second piezoelectric film on the second lower electrode, and a second upper electrode on the second piezoelectric film;

in the step of forming the first actuator, the first actuator further includes: a first non-stretching layer located above the first upper electrode; in the step of forming the second actuator, the second actuator further includes: the second non-telescopic layer is positioned below the second lower electrode;

alternatively, the first and second electrodes may be,

in the step of forming the first actuator, the first actuator further includes: a first non-stretching layer located below the first lower electrode; in the step of forming the second actuator, the second actuator further includes: and the second non-telescopic layer is positioned above the second upper electrode.

11. The method of forming a telescopic structure according to claim 10, wherein in the step of forming the first actuator, the first actuator has a third end and a fourth end opposite to the third end in an extending direction of the first actuator;

the method for forming the telescopic structure further comprises the following steps: after forming the first actuator and before forming the second actuator, forming a first dielectric layer and a second dielectric layer on the first actuator, wherein the first dielectric layer is located at the third end position, and the second dielectric layer is located between the third end and the fourth end and adjacent to the fourth end;

in the step of forming the second actuator, the second actuator has a first end and a second end along an extending direction of the second actuator, the first end is in contact with a top surface of the first dielectric layer, and the second end is in contact with a top surface of the second dielectric layer.

12. The method of forming a telescopic structure according to claim 10, wherein the material of each of the first and second non-telescopic layers comprises one or both of silicon and silicon nitride.

13. The method of claim 11, wherein the first dielectric layer and the second dielectric layer are formed on the first actuator using a dispensing process.

14. The method of forming a telescoping structure as in claim 11, wherein the step of forming a first dielectric layer and a second dielectric layer on the first actuator comprises: forming a bottom dielectric layer at the third end position by adopting a first glue dispensing process;

after the first dispensing process, forming a second dielectric layer at a position close to the fourth end by adopting a second dispensing process;

and after the second dielectric layer is formed, forming a top dielectric layer on the bottom dielectric layer by adopting the first dispensing process, wherein the top dielectric layer and the bottom dielectric layer are used for forming the first dielectric layer.

15. The method of forming a telescopic structure according to claim 11, wherein the material of said first dielectric layer comprises a DAF film; the material of the second dielectric layer comprises a DAF film.

16. The method of forming a telescoping structure as in claim 11, wherein the step of forming a second actuator on the first actuator comprises: and enabling the first end of the second actuator to be in contact with the top surface of the first medium layer and the second end to be in contact with the top surface of the second medium layer by adopting an adhesive process.

17. The method of forming a telescopic structure according to claim 11, wherein in the step of forming a first dielectric layer and a second dielectric layer on the first actuator, the first dielectric layer and the second dielectric layer have the same thickness.

18. The method of forming a telescoping structure as in claim 11, further comprising: providing a substrate prior to forming the first actuator; forming a third dielectric layer on the substrate; forming a first sacrificial layer on the substrate exposed out of the third dielectric layer; the step of forming the first actuator includes: forming a first lower electrode on the third dielectric layer and a part of the first sacrificial layer close to the third dielectric layer; forming a first piezoelectric film on the first lower electrode; forming a first upper electrode on the first piezoelectric film; forming a first non-stretching layer on the first upper electrode;

the method for forming the telescopic structure further comprises the following steps: after the first dielectric layer and the second dielectric layer are formed and before the second actuator is formed, a second sacrificial layer is formed on the first actuator and the first sacrificial layer exposed from the first dielectric layer and the second dielectric layer;

the step of forming the second actuator comprises: forming a second non-stretching layer on the first dielectric layer, the second dielectric layer and the second sacrificial layer between the first dielectric layer and the second dielectric layer; forming a second lower electrode on the second non-stretching layer; forming a second piezoelectric film on the second lower electrode; forming a second upper electrode on the second piezoelectric film;

the method for forming the telescopic structure further comprises the following steps: after the second actuator is formed, etching the base from the side, opposite to the first actuator, of the base to expose the first sacrificial layer, wherein the rest of the base is used as a substrate; and after the substrate is formed, removing the first sacrificial layer and the second sacrificial layer.

19. The method of forming a telescoping structure as in claim 18, wherein in the step of forming the first actuator, the first actuator has a plurality of first piezoelectric films; a first metal layer is formed between the first piezoelectric films;

forming the second actuator having a plurality of second piezoelectric films; a second metal layer is formed between the second piezoelectric films;

in the step of forming the second dielectric layer, a fifth dielectric layer is further formed on the fourth end, and the fifth dielectric layer is in contact with the second dielectric layer;

the method for forming the telescopic structure further comprises the following steps: forming a fourth dielectric layer on the fifth dielectric layer and on the second end after forming the second actuator and before removing the first and second sacrificial layers.

20. The method of forming a telescopic structure according to claim 10, wherein the material of the first piezoelectric film includes: one or more of lead zirconate titanate, zinc oxide, aluminum nitride, zinc oxide, and gallium nitride;

21. The method of claim 11, wherein the material of the first dielectric layer comprises one or more of silicon nitride, silicon oxynitride, silicon carbide nitride, boron nitride boron silicon nitride, and boron carbon silicon nitride; the material of the second dielectric layer comprises one or more of silicon nitride, silicon oxynitride, silicon carbide, silicon carbonitride, boron nitride and boron nitride silicon carbide.

22. The method of forming a telescopic structure according to claim 18, wherein the material of the first sacrificial layer comprises silicon oxide; the material of the second sacrificial layer comprises silicon oxide.

23. The method of forming a telescopic structure according to claim 18, wherein the first sacrificial layer and the second sacrificial layer are removed by a wet etching process.

24. A method of driving a telescopic structure according to any of claims 1 to 9, comprising:

executing initial driving processing to enable the first upper electrode, the first lower electrode, the second upper electrode and the second lower electrode to be in a floating state;

after the initial driving process, performing a displacement process including: applying a first drive signal to the first lower electrode and a second drive signal to the first upper electrode to generate a potential difference between the top surface and the bottom surface of the first piezoelectric film, wherein the potential difference between the top surface and the bottom surface of the first piezoelectric film causes electrostriction of the first piezoelectric film;

and applying a third drive signal to the second lower electrode and a fourth drive signal to the second upper electrode to generate a potential difference between the top surface and the bottom surface of the second piezoelectric film, wherein the potential difference between the top surface and the bottom surface of the second piezoelectric film causes electrostriction of the second piezoelectric film, and the potential difference between the top surface and the bottom surface of the second piezoelectric film is the same as the potential difference between the top surface and the bottom surface of the first piezoelectric film.

25. The method of driving a telescoping structure as in claim 24, wherein the first drive signal and third drive signal are the same and the second drive signal and fourth drive signal are the same.

26. An electronic device, comprising:

a fixed platform;

a telescopic structure as claimed in any one of claims 1 to 9, and having one end connected to the fixed platform;

and the telescopic component is connected with the other end of the telescopic structure.

27. The electronic device of claim 26, wherein the number of the telescopic structures is plural, and the plurality of telescopic structures are arranged around the telescopic member at equal angles along a circumferential direction.

28. The electronic device of claim 26, wherein the number of the telescopic structures is one or more, and one end of the telescopic structure is connected with the same end of the telescopic member.

29. The electronic device of claim 26, wherein the telescoped component comprises a flexible lens, a flexible resistor, or a flexible capacitor.

30. The utility model provides a module of making a video recording which characterized in that includes:

a plurality of telescoping structures as in any of claims 1-9;

the telescopic component is connected with one end of the telescopic structure and comprises a flexible lens;

an image sensor corresponding to the flexible lens.