CN113644143B - 一种全透明光电探测器及其制备方法 - Google Patents

一种全透明光电探测器及其制备方法 Download PDF

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CN113644143B
CN113644143B CN202110708675.1A CN202110708675A CN113644143B CN 113644143 B CN113644143 B CN 113644143B CN 202110708675 A CN202110708675 A CN 202110708675A CN 113644143 B CN113644143 B CN 113644143B
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刘舸
李元元
唐伟东
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Huizhou University
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Abstract

本发明属于光电探测技术领域。一种全透明光电探测器的制备方法，包括以下步骤：在衬底上制备第一石墨烯薄膜；在电极表面旋涂量子点材料；在量子点材料表面转移第二石墨烯薄膜；在第一石墨薄膜和第二石墨烯薄膜表面旋涂PMMA薄膜，形成保护层。本发明探测器感知弱光范围广，入射光吸收面积大，吸收效率高，灵敏度高，光电响应速度快，柔性器件能更好的适应不同的工作环境，应用范围广。

Description

一种全透明光电探测器及其制备方法
技术领域
本发明属于光电探测技术领域，具体涉及一种全透明光电探测器及其制备方法。
背景技术
光学探测器在化学材料分析、医疗卫生、空间技术等方面具有广泛的应用，随着物联网和人工智能的发展，作为机器视觉一个重要部分的光电传感器将会扮演越来越重要的的地位。光电探测器具有高灵敏度，高光学响应，响应速度快等优点，在高速调制和微弱信号检测方面具有重要应用。石墨烯是由单层sp2杂化碳原子构成的蜂窝状二维平面晶体薄膜，是一种具有极高致密性、透明度和柔韧性的新型二维导电材料，单层石墨烯只吸收2.3%的光，可作为透明导电薄膜。虽然石墨烯电子迁移率高，但受限于单层原子极低的光吸收率，探测响应率低。
发明内容
本发明所要解决的技术问题是提供一种全透明光电探测器，该探测器感知弱光范围广，入射光吸收面积大，吸收效率高，灵敏度高，光电响应速度快，柔性器件能更好的适应不同的工作环境，应用范围广。
本发明的技术方案如下：
一种全透明光电探测器的制备方法，包括以下步骤：
S1.清洗衬底，在衬底上制备第一石墨烯薄膜；
S2.在石墨烯薄膜表面制备电极；
S4.在电极表面旋涂量子点材料；
S5.在量子点材料表面转移第二石墨烯薄膜；
S4.在第一石墨薄膜和第二石墨烯薄膜表面旋涂PMMA薄膜，形成保护层。
进一步的，步骤S1中，所述衬底为柔性衬底，衬底材料包括PET，采用柔性衬底使器件表现出良好的柔性，器件整体可弯曲；所述第一石墨烯薄膜的制备方式为静电吸附转移，避免了衬底材料经溶剂清洗导致性能降低，形成的石墨烯薄膜平整度好，保证了薄膜具有较高的载流电子迁移率、透明度以及柔性。
进一步的，步骤S2中，所述电极为金属电极，电极材料包括Au，所述底电极的制备方法为光刻或蒸镀，可通过光刻的图形化工艺制备底电极，或采用漏板的方式直接在石墨烯薄膜表面蒸镀底电极材料。预置的石墨烯薄膜作为电极的过渡层，有效改善了电极的接触电阻，从而提升器件的整体性能。
进一步的，由下至上依次设有衬底、第一石墨烯薄膜、电极、量子点层、第二石墨烯薄膜和保护层；所述保护层位于所述第二石墨烯薄膜表面和所述第一石墨烯薄膜未被所述电极覆盖的表面。
进一步的，所述电极厚度为35-55nm，所述第一石墨烯薄膜和所述第二石墨烯薄膜厚度为10-15nm，所述保护层最大厚度为0.5-20μm。双层石墨烯薄膜结构，提高了光吸收度，增强了光电效应，薄膜较厚，可探测波段更宽。
进一步的，所述电极包括两个对称的叉指电极。两个电极交叉设置可降低其间距，减少了载流电子迁移时间，在外加电场作用下，提高载流电子的迁移速度和收集效率，从而提高探测器的灵敏度，降低响应时间。
进一步的，所述两个叉指电极的间距为5-10μm。
本发明具有如下有益效果：
本发明探测器为采用量子点材料制备而成的全透明柔性光电传感器，具有石墨烯薄膜-量子点材料-石墨烯薄膜的三明治结构，该结构可从上下两个方向收集感应电子，接收面积大，接收效率高，从而提高了器件的光电响应效率。石墨烯薄膜可起到导电透明电极的作用，其透射窗口宽，透射率高，灵敏度高，响应速度快。全透明结构提高了器件感知弱光范围，增强入射光吸收，提高光生电流和光学响应；良好的柔性能让器件更好的适应不同的工作环境，器件应用范围广。
附图说明
图1为本发明全透明光电探测器的截面结构示意图；
图2为本发明全透明光电探测器的结构俯视图；
1.衬底，2.第一石墨烯薄膜，3.电极，31.叉指电极，4.量子点层，5.第二石墨烯薄膜，6.保护层。
具体实施方式
下面结合附图和实施例对本发明进行详细的说明，实施例仅是本发明的优选实施方式，不是对本发明的限定。
一种全透明光电探测器的制备方法，包括以下步骤：
S1.清洗衬底，在衬底上静电吸附转移第一石墨烯薄膜；
S2.在石墨烯薄膜表面制备金属电极，可通过光刻的图形化工艺制备底电极，或采用漏板的方式直接在石墨烯薄膜表面蒸镀底电极材料；
S4.在电极表面旋涂量子点材料；
S5.在量子点材料表面转移第二石墨烯薄膜；
S4.在第一石墨薄膜和第二石墨烯薄膜表面旋涂PMMA薄膜，形成保护层。
一种由上述的制备方法制备而成的全透明光电探测器，如图1-2所示，由下至上依次设有衬底1、第一石墨烯薄膜2、电极3、量子点层4、第二石墨烯薄膜5和保护层6；所述保护层6位于所述第二石墨烯薄膜5表面和所述第一石墨烯薄膜2未被所述电极3覆盖的表面，6.所述电极3包括两个对称的叉指电极31。
量子点层4作为本发明全透明光电探测器的核心功能层，量子点层4材料的光学性能决定了器件的光电探测性能，也可以根据不同的探测需要选用不同的量子点层4材料，包括InP、CdSn、石墨烯类、钙钛矿类等材料，器件的光电探测范围可从紫外（<300nm）覆盖到红外（>1000nm）波段。因为采用全透明的结构，器件的感光面积和受光效率明显增加，器件电极在2.5-4V的正向偏压下，同等照度条件里，器件的响应电流会更明显，器件的探测效率会显著提升，从紫外到红外区域，器件的光电响应效率高于0.1A/W。
本发明探测器感知弱光范围广，入射光吸收面积大，吸收效率高，灵敏度高，光电响应速度快，柔性器件能更好的适应不同的工作环境，应用范围广。

Claims (5)

1.一种全透明光电探测器，其特征在于，由下至上依次设有衬底、第一石墨烯薄膜、电极、量子点层、第二石墨烯薄膜和保护层；所述保护层位于所述第二石墨烯薄膜表面和所述第一石墨烯薄膜未被所述电极覆盖的表面，所述电极包括两个对称的叉指电极；
上述全透明光电探测器的制备方法，包括以下步骤：
S1.清洗衬底，在衬底上制备第一石墨烯薄膜；
S2.在第一石墨烯薄膜表面制备电极；
S3.在电极表面旋涂量子点材料；
S4.在量子点材料表面转移第二石墨烯薄膜；
S5.在第一石墨薄膜和第二石墨烯薄膜表面旋涂PMMA薄膜，形成保护层。
2.根据权利要求1所述的全透明光电探测器，其特征在于，步骤S1中，所述衬底为柔性衬底，衬底材料包括PET；所述第一石墨烯薄膜的制备方式为静电吸附转移。
3.根据权利要求1所述的全透明光电探测器，其特征在于，步骤S2中，所述电极为金属电极，电极材料包括Au，所述电极的制备方法为光刻或蒸镀。
4.根据权利要求1所述的全透明光电探测器，其特征在于，所述电极厚度为35-55nm，所述第一石墨烯薄膜和所述第二石墨烯薄膜厚度为10-15nm，所述保护层最大厚度为0.5-20μm。
5.根据权利要求1所述的全透明光电探测器，其特征在于，所述两个对称的叉指电极的间距为5-10μm。
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