CN113643960A - beta-Ga based on pulse method2O3Film and preparation method thereof - Google Patents
beta-Ga based on pulse method2O3Film and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims description 16
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims abstract description 110
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 238000000034 method Methods 0.000 claims abstract description 36
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 34
- 239000001301 oxygen Substances 0.000 claims description 34
- 229910052760 oxygen Inorganic materials 0.000 claims description 34
- 238000006243 chemical reaction Methods 0.000 claims description 33
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 claims description 30
- 238000000137 annealing Methods 0.000 claims description 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 238000002791 soaking Methods 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 2
- 238000012545 processing Methods 0.000 claims description 2
- 238000005406 washing Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 36
- 239000010409 thin film Substances 0.000 abstract description 23
- 125000004429 atom Chemical group 0.000 description 18
- 230000005012 migration Effects 0.000 description 8
- 238000013508 migration Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 7
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- 125000004430 oxygen atom Chemical group O* 0.000 description 5
- 238000012795 verification Methods 0.000 description 5
- 239000000356 contaminant Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 4
- 229910001195 gallium oxide Inorganic materials 0.000 description 4
- 230000006911 nucleation Effects 0.000 description 3
- 238000010899 nucleation Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
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Abstract
The invention discloses a pulse method-based beta-Ga2O3Thin film and method for preparing the same, beta-Ga2O3The film includes: homogeneous substrate layer, at least one pulsed beta-Ga2O3Layer and at least one beta-Ga2O3A layer; the pulsed beta-Ga2O3Number of layers and the beta-Ga2O3The number of layers is the same; the homogenous substrate layer and the beta-Ga2O3Pulsed beta-Ga is grown between the layers2O3A layer; every two of said beta-Ga2O3Pulsed beta-Ga is grown between the layers2O3And (3) a layer. The invention can epitaxially grow high-quality and low-dislocation-density beta-Ga on the homogeneous substrate layer based on a pulse method2O3A film.
Description
Technical Field
The invention belongs to the field of semiconductor materials, and particularly relates to a pulse method-based beta-Ga2O3A film and a preparation method thereof.
Background
β-Ga2O3The film has great application potential in high-power high-breakdown devices, so that the beta-Ga is applied to the beta-Ga along with the wide application of the high-power high-breakdown devices2O3The demands on thin films are also increasing.
In the prior art, the beta-Ga is usually carried out on the basis of a homogeneous substrate layer2O3Preparation of films for the preparation of beta-Ga2O3The film must reasonably adjust the value of each growth parameter, therefore, the preparation method in the prior art is complex and the quality is difficult to guarantee. In addition, when the quality of the homogeneous substrate layer is poor, the prior art cannot perform β -Ga based on the poor quality homogeneous substrate layer2O3And (3) preparing a film.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a beta-Ga based on a pulse method2O3A film and a preparation method thereof. The technical problem to be solved by the invention is realized by the following technical scheme:
beta-Ga based on pulse method2O3Thin film of said beta-Ga2O3The film includes: homogeneous substrate layer, at least one pulsed beta-Ga2O3Layer and at least one beta-Ga2O3A layer; the pulsed beta-Ga2O3Number of layers and the beta-Ga2O3The number of layers is the same; the homogenous substrate layer and the beta-Ga2O3Pulsed beta-Ga is grown between the layers2O3A layer; every two of said beta-Ga2O3Pulsed beta-Ga is grown between the layers2O3And (3) a layer.
In one embodiment of the invention, the pulsed β -Ga2O3The thickness of the layer is 30-50 nm.
In one embodiment of the invention, the pulsed β -Ga2O3The layer is of a single crystal structure.
The invention has the beneficial effects that:
the invention can epitaxially grow high-quality and low-dislocation-density beta-Ga on the homogeneous substrate layer based on a pulse method2O3A film.
The present invention will be described in further detail with reference to the accompanying drawings and examples.
Drawings
FIG. 1 shows a pulse method-based beta-Ga solution according to an embodiment of the present invention2O3A schematic view of a film structure;
FIG. 2 shows a pulse-based method of producing beta-Ga2O3The flow diagram of the film preparation method;
FIG. 3 is a schematic timing diagram of a pulse method according to an embodiment of the present invention;
FIG. 4 shows a pulse-based method of producing beta-Ga according to an embodiment of the present invention2O3The film preparation process is shown schematically.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.
Example one
Referring to fig. 1, fig. 1 shows a pulse method based beta-Ga according to an embodiment of the present invention2O3Schematic view of thin film structure, the beta-Ga2O3The film includes: homogeneous substrate layer, at least one pulsed beta-Ga2O3Layer and at least one beta-Ga2O3And (3) a layer.
According to the invention, epitaxial layer growth is carried out on the basis of a substrate layer to obtain a thin film material, and when the epitaxial layer and the substrate layer are made of the same material, the substrate layer is called a homogeneous substrate layer. The invention is to prepare beta-Ga2O3(gallium oxide) thin film, said homogeneous substrate layer also known as Ga2O3A (gallium oxide) substrate layer.
Optionally, the pulsed beta-Ga2O3Number of layers and the beta-Ga2O3The number of layers is the same.
Optionally, the homogeneous linerBottom layer and the beta-Ga2O3Pulsed beta-Ga is grown between the layers2O3And (3) a layer.
Optionally, every second of said beta-Ga2O3Pulsed beta-Ga is grown between the layers2O3And (3) a layer.
Usually in the preparation of beta-Ga2O3In the case of thin films, in the homogeneous substrate layer with beta-Ga2O3Between layers, and beta-Ga2O3Layer and beta-Ga2O3Between layers, the prepared beta-Ga may be resulted from problems of lattice mismatch, thermal mismatch, etc2O3The thin film contains a large number of defects such as dislocations, and the direction in which the dislocations extend is generally the same as the direction in which the thickness of the thin film increases, and the defects reduce β -Ga2O3The quality of the film. Particularly, the film is prepared in a fixed growth mode, and as the thickness of the prepared film is increased, dislocations in the film can gradually extend and even extend from the surface of the substrate to the surface of the epitaxial layer, so that the quality of the prepared film is seriously influenced.
The invention is in beta-Ga2O3Introduction of pulsed beta-Ga into thin films2O3Layer of said pulsed beta-Ga2O3The layer is used as a buffer layer, can effectively prevent dislocation extension in the thin film, thereby reducing dislocation density in the thin film and improving the prepared beta-Ga2O3Film quality. Specifically, firstly, a layer of pulse beta-Ga is introduced into a homogeneous substrate layer2O3Layer of said pulsed beta-Ga2O3The layer can reduce the homogeneous substrate layer and the beta-Ga2O3Lattice mismatch between layers, thereby reducing dislocation density; second in the growth of beta-Ga2O3In the course of the layers, in each two layers, beta-Ga2O3Introducing pulses of beta-Ga between the layers2O3Layer of the beta-Ga grown2O3The layer is a growth module for growing the pulse beta-Ga2O3The layer is another growth mode, and the growth of beta-Ga can be repaired through the change of the growth mode2O3Dislocation extending longitudinally of the layer, thereby reducing the amount of beta-Ga per two2O3Dislocation density between layers.
In addition, in the prior art, two paths of source gases, namely a Ga source and an O source, are generally simultaneously introduced into a reaction chamber, the combination rate of Ga atoms and O atoms is very high, so that the atoms are combined with each other before being migrated to an ideal position on the surface, and therefore, the migration length of the atoms is low, three-dimensional nucleation growth can be caused, and the surface is rough. The invention grows the pulse beta-Ga by a pulse method2O3During layering, two paths of gases of a Ga source and an O source are introduced into the reaction chamber in a staggered mode according to respective pulse time parameters, so that the migration time of reaction atoms on the surface is prolonged, the transverse migration length of the atoms on the surface is effectively increased, two-dimensional nucleation growth is enhanced, the atoms are combined to the most appropriate position, the surface flatness is improved, and the prepared beta-Ga can be further improved2O3Film quality.
The pulsed beta-Ga2O3Layer and beta-Ga2O3The number of layers is set by those skilled in the art according to the service requirements, and the present invention is not limited thereto. Referring to FIG. 1, three pulses of β -Ga are used in FIG. 12O3Layer and three beta-Ga2O3The layers are illustrated as a homogeneous substrate layer 1, and the pulsed beta-Ga are from bottom to top in sequence2O3Layer 2, beta-Ga2O3Layer 3, pulsed beta-Ga2O3Layer 4, beta-Ga2O3Layer 5, pulsed beta-Ga2O3Layer 6, pulsed beta-Ga2O3Layer 7.
Wherein the pulse is beta-Ga2O3Layer 2 is able to block the homogeneous substrate layer 1 from beta-Ga2O3Extension of dislocations between layers 3, further, pulsing beta-Ga2O3Layer 4 being able to block beta-Ga2O3Layer 3 with beta-Ga2O3Extension of dislocations between the layers 5, further, pulsing of beta-Ga2O3Layer 6 is able to block beta-Ga2O3Layer 5 with beta-Ga2O3Dislocation extension between layers 7, the present invention by multi-layer pulsing of beta-Ga2O3Layer capable of more effectively solidifying and improving beta-Ga2O3Flatness of the film.
Optionally, the pulsed beta-Ga2O3The thickness of the layer is 30-50 nm.
The pulsed beta-Ga is verified by experiments of a person skilled in the art2O3The thickness of the layer is set to be 30-50nm, which can ensure the preparation of beta-Ga2O3The quality of the film is improved and the pulse beta-Ga is improved2O3The growth rate of the layer is increased, thereby increasing the beta-Ga2O3The preparation efficiency of the film.
Optionally, the pulsed beta-Ga2O3The layer is of a single crystal structure.
Through experimental verification of a person skilled in the art, when the pulse beta-Ga is compared with a polycrystalline structure or an amorphous structure2O3When the layer has a single crystal structure, the beta-Ga is prepared2O3The thin film has better electrical characteristics, less dislocation density and lower roughness.
In conclusion, the invention can obtain the pulse beta-Ga by the pulse method2O3Layer based on said pulsed beta-Ga2O3The high-quality and low-dislocation-density beta-Ga 2O3 thin film is epitaxially grown on the same substrate layer.
Example two
Referring to fig. 2, fig. 2 shows a pulse method-based β -Ga according to an embodiment of the present invention2O3The flow chart of the film preparation method is shown schematically. The method comprises the following steps:
step 1: carrying out thermal annealing treatment on the homogeneous substrate layer according to preset thermal annealing parameters to obtain a target substrate layer, wherein the preset thermal annealing parameters comprise: a first chamber temperature parameter, a first oxygen flow parameter, a nitrogen flow parameter, and a thermal annealing time parameter.
Optionally, step 1 includes:
step 1-1: and placing the homogeneous substrate layer into a preset reaction chamber.
Step 1-2: and carrying out thermal annealing treatment on the homogeneous substrate layer in a preset reaction chamber according to preset thermal annealing parameters.
According to the invention, epitaxial layer growth is carried out on the basis of a substrate layer to obtain a thin film material, and when the epitaxial layer and the substrate layer are made of the same material, the substrate layer is called a homogeneous substrate layer. The invention is to prepare beta-Ga2O3(gallium oxide) thin film, said homogeneous substrate layer also known as Ga2O3A (gallium oxide) substrate layer.
When a film is epitaxially grown on the basis of a substrate layer, thermal annealing treatment needs to be performed on the substrate layer, the thermal annealing treatment can enable the surface of the substrate layer to be flat, dangling bonds on the surface of the substrate layer are passivated, a target substrate layer is obtained, and a high-quality epitaxial layer can be grown on the basis of the target substrate layer, so that the high-quality film is obtained.
The invention carries out thermal annealing treatment and pulse beta-Ga treatment on the homogeneous substrate layer through the preset reaction chamber2O3Layer growth and beta-Ga2O3Layer growth to produce beta-Ga2O3A thin film, the predetermined reaction chamber being selected by those skilled in the art according to the business needs, and the present invention is not particularly limited. In the present invention, the predetermined reaction chamber is exemplified by a low-pressure MOCVD (Metal-Organic Chemical Vapor Deposition) reaction chamber.
The preset annealing parameters are set in the preset reaction chamber, and the preset annealing parameters are set by a person skilled in the art according to business needs, which is not limited in the invention. Through experimental verification, the preset thermal annealing parameters are preferentially set as follows: the first chamber temperature parameter is 900 ℃, the first oxygen flow parameter is 2100sccm, the nitrogen flow parameter is 1000sccm, and the thermal annealing time parameter is 15 min.
Step 2: according to the first growth parameter, carrying out pulse processing on the target substrate layer to grow and obtain pulse beta-Ga on the surface of the target substrate layer2O3And (3) a layer.
Optionally, the first growth parameter includes: a first triethyl gallium flow parameter, a second oxygen flow parameter, a TEGa pulse time parameter, and oxygen O2Pulse of lightA time parameter and a pulse period parameter.
The preset reaction chamber is provided with a first growth parameter, and the first growth parameter is set by a person skilled in the art according to business needs, which is not limited by the invention. Through experimental verification, the preset thermal annealing parameters are preferentially set as follows: the first growth parameter comprises: a first triethyl gallium flow parameter of 40sccm, a second oxygen flow parameter of 2100sccm, a triethyl gallium pulse time parameter of 0.1min, an oxygen pulse time parameter of 0.3min, and a pulse period parameter: 30 cycles (or 12 min).
Optionally, the first growth parameter further includes: second chamber temperature, growth pressure parameters.
Through experimental verification, the preset thermal annealing parameters are preferentially set as follows: the temperature of the second reaction chamber is 800 ℃, and the growth pressure parameter is 40 Torr.
Optionally, step 2 includes:
step 2-1: and introducing the triethyl gallium into the preset reaction chamber according to the first triethyl gallium flow parameter and the triethyl gallium pulse time parameter.
Step 2-2: and introducing oxygen into the preset reaction chamber according to the second oxygen flow parameter and the parameter oxygen pulse time parameter.
For example, if the pulse period is divided into the triethyl gallium pulse time and the oxygen pulse time, for example, the triethyl gallium pulse time parameter is 0.1min, and the oxygen pulse time parameter is 0.3min, then one pulse period is 0.4min, that is, the step 2-1 and the step 2-2 are performed in one pulse period.
Fig. 3 is a schematic timing flow diagram of a pulse method according to an embodiment of the present invention, in fig. 3, a vertical axis represents a reaction source switch (Precursor flux), on represents on, off represents off, a vertical axis represents pulse Time (Time), a waveform protrusion represents on, and a recess represents off.
Specifically, when the waveform of the triethyl gallium is concave and the waveform of the oxygen is convex in 0.0-0.3min, the preset reaction chamber starts to introduce the oxygen and stops introducing the triethyl gallium at the same time; and when the waveform of the triethyl gallium is convex and the waveform of the oxygen is concave in 0.3-0.4min, the preset reaction chamber starts to introduce the triethyl gallium and stops introducing the oxygen at the same time.
The pulse method is characterized in that when a preset reaction chamber is filled with triethyl gallium according to a first triethyl gallium flow parameter and a triethyl gallium pulse time parameter, the preset reaction chamber stops filling oxygen; or when a preset reaction chamber is filled with oxygen according to the second oxygen flow parameter and the parameter oxygen pulse time parameter, stopping filling the triethyl gallium into the preset reaction chamber.
In the prior art, two paths of reaction source gases of a Ga source and an O source are generally simultaneously introduced into a reaction chamber, and the combination rate of Ga atoms and O atoms is very high, so that the atoms are combined with each other before being migrated to an ideal position on the surface, and therefore, the migration length of the atoms is low, and three-dimensional nucleation growth can be caused. Also, since the mobility of Ga atoms is different from that of O atoms, and Ga atoms are smaller than that of O atoms as metal atoms, the mobility length of Ga atoms is shorter than that of O atoms at the same time, which may cause surface roughness when the precursor gas is simultaneously introduced.
The invention grows the pulse beta-Ga by a pulse method2O3During layering, two paths of gases of a Ga source and an O source are introduced into a reaction chamber in a staggered mode according to respective pulse time parameters, and for different migration lengths of various reaction atoms, the migration time of the various reaction source atoms on the surface can be reasonably set by adjusting the time of each path of pulse so as to enhance the transverse migration length of the atoms on the surface, so that the atoms are combined to the most appropriate position, the two-dimensional growth of the film is finally realized, and the quality of the film is improved. For example, 0.1minO +0.3minGa, that is, a longer pulse time is given to the Ga source, the migration length of Ga atoms is increased, and the two-dimensional growth of the film can be effectively improved.
Step 2-3: repeating the step 2-1 and the step 2-2 according to the pulse period parameters to obtain the pulse beta-Ga on the surface of the thermally annealed homogeneous substrate layer2O3And (3) a layer.
The pulse period parameter refers to the step 2-1 and the stepThe number of times of repeating step 2-2 is shown as, for example, a pulse period parameter of 30 periods, i.e., repeating step 2-1 and step 2-2 30 times to obtain 30 periods of β -Ga2O3And (3) a layer.
And step 3: according to a second growth parameter, in said pulse beta-Ga2O3The beta-Ga is obtained by the growth on the surface of the layer2O3And (3) a layer.
Optionally, the second growth parameter includes: a second triethylgallium flow parameter, a third oxygen flow parameter, and a growth time parameter.
And setting a second growth parameter in the preset reaction chamber, wherein the second growth parameter is set by a person skilled in the art according to business needs, and the invention is not limited. The second triethyl gallium flow parameter and the third oxygen flow parameter in the second growth parameter may be the same values as the first triethyl gallium flow parameter and the second oxygen flow parameter in the first growth parameter. Through experimental verification, the preset thermal annealing parameters are preferentially set as follows: the second triethyl gallium flow parameter is 40sccm, the third oxygen flow parameter is 2100sccm, and the growth time parameter is 20 min.
Optionally, according to the second growth parameter, the pulse is beta-Ga2O3The beta-Ga is obtained by the growth on the surface of the layer2O3A layer, comprising:
according to the second triethyl gallium flow parameter, the third oxygen flow parameter and the growth time parameter, simultaneously introducing triethyl gallium and oxygen into the preset reaction chamber so as to obtain the pulse beta-Ga2O3The beta-Ga is obtained by the growth on the surface of the layer2O3And (3) a layer.
Optionally, after step 3, the method further includes:
step S11: subjecting the beta-Ga to2O3The layer serves as a new target substrate layer.
Step S12: repeating the step 2 and the step 3 according to preset preparation parameters to obtain the target beta-Ga2O3A film.
The invention can obtainβ-Ga2O3Layer as a new target substrate layer, prepared with at least one pulse of beta-Ga2O3Layer and at least one beta-Ga2O3beta-Ga of the layer2O3Thin films, typically of said beta-Ga2O3The film having at least two pulses of beta-Ga2O3Layer and at least two beta-Ga2O3And (3) a layer.
Referring to fig. 1, an embodiment of the present invention provides a pulse method-based β -Ga2O3Schematic diagram of thin film structure, in FIG. 1, three pulses of beta-Ga are used2O3Layer and three beta-Ga2O3The layers are illustrated. Wherein the pulse is beta-Ga2O3Layer 2 is able to block the homogeneous substrate layer 1 from beta-Ga2O3Extension of dislocations between layers 3, further, pulsing beta-Ga2O3Layer 4 being able to block beta-Ga2O3Layer 3 with beta-Ga2O3Extension of dislocations between the layers 5, further, pulsing of beta-Ga2O3Layer 6 is able to block beta-Ga2O3Layer 5 with beta-Ga2O3Dislocation extension between layers 7, the present invention by multi-layer pulsing of beta-Ga2O3Layer capable of more effectively solidifying and improving beta-Ga2O3Flatness of the film.
The invention is in beta-Ga2O3Introduction of pulsed beta-Ga into thin films2O3Layer of said pulsed beta-Ga2O3The layer is used as a buffer layer, can effectively prevent dislocation extension in the thin film, thereby reducing dislocation density in the thin film and improving the prepared beta-Ga2O3Film quality. In addition, the pulsed β -Ga2O3The layer has the characteristics of high smoothness and the like, and can further improve the prepared beta-Ga2O3Film quality.
Optionally, before step 1, the method further includes:
step S21: and polishing the homogeneous substrate layer.
Step S22: and putting the polished homogeneous substrate layer into a prefabricated solution for soaking treatment.
The soaking treatment can make the pollutants on the surface of the homogeneous substrate layer more easily fall off. For example, the pre-prepared solution is a 30% HF acid solution, and the homogeneous substrate layer is soaked in the 30% HF acid solution for 60 seconds.
Step S23: and cleaning the soaked homogeneous substrate layer.
The cleaning process is capable of removing contaminants, such as organic contaminants and inorganic contaminants, from the surface of the homogenous substrate layer. For example, the surface of the homogenous substrate layer is cleaned of contaminants with alcohol and acetone.
Step S24: and carrying out washing treatment on the washed homogeneous substrate layer.
The rinsing process is capable of rinsing away chemical solutions from the surface of the homogenous substrate. For example, rinse with flowing deionized water for 60 s.
Referring to FIG. 4, it is a pulse method based beta-Ga provided by the embodiment of the present invention2O3The film preparation process is shown schematically.
In conclusion, the invention can obtain the pulse beta-Ga by the pulse method2O3Layer based on said pulsed beta-Ga2O3The high-quality and low-dislocation-density beta-Ga 2O3 thin film is epitaxially grown on the same substrate layer.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples described in this specification can be combined and combined by those skilled in the art.
While the present application has been described in connection with various embodiments, other variations to the disclosed embodiments can be understood and effected by those skilled in the art in practicing the claimed application, from a review of the drawings, the disclosure, and the appended claims. In the claims, the word "comprising" does not exclude other elements or steps, and the word "a" or "an" does not exclude a plurality. A single processor or other unit may fulfill the functions of several items recited in the claims. The mere fact that certain measures are recited in mutually different dependent claims does not indicate that a combination of these measures cannot be used to advantage.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (9)
1. beta-Ga based on pulse method2O3Film, characterized in that the beta-Ga is2O3The film includes: homogeneous substrate layer, at least one pulsed beta-Ga2O3Layer and at least one beta-Ga2O3A layer;
the pulsed beta-Ga2O3Number of layers and the beta-Ga2O3The number of layers is the same;
the homogenous substrate layer and the beta-Ga2O3Pulsed beta-Ga is grown between the layers2O3A layer;
every two of said beta-Ga2O3Pulsed beta-Ga is grown between the layers2O3And (3) a layer.
2. beta-Ga according to claim 12O3Film, characterized in that said pulsed β -Ga2O3The thickness of the layer is 30-50 nm.
3. beta-Ga according to claim 12O3Film, characterized in that said pulsed β -Ga2O3The layer is of a single crystal structure.
4. beta-Ga based on pulse method2O3A method of making a film, the method comprising:
step 1: carrying out thermal annealing treatment on the homogeneous substrate layer according to preset thermal annealing parameters to obtain a target substrate layer, wherein the preset thermal annealing parameters comprise: a first chamber temperature parameter, a first oxygen flow parameter, a nitrogen flow parameter, and a thermal annealing time parameter;
step 2: according to the first growth parameter, carrying out pulse processing on the target substrate layer to grow and obtain pulse beta-Ga on the surface of the target substrate layer2O3A layer, wherein the first growth parameter comprises: a first triethyl gallium flow parameter, a second oxygen flow parameter, a triethyl gallium pulse time parameter, an oxygen pulse time parameter, and a pulse period parameter;
and step 3: according to a second growth parameter, in said pulse beta-Ga2O3The beta-Ga is obtained by the growth on the surface of the layer2O3A layer, wherein the second growth parameters comprise: a second triethylgallium flow parameter, a third oxygen flow parameter, and a growth time parameter.
5. The method of claim 4, wherein step 1 comprises:
step 1-1: putting the homogeneous substrate layer into a preset reaction chamber;
step 1-2: and carrying out thermal annealing treatment on the homogeneous substrate layer in a preset reaction chamber according to preset thermal annealing parameters.
6. The method of claim 4, wherein the step 2 comprises:
step 2-1: introducing triethyl gallium into the preset reaction chamber according to the first triethyl gallium flow parameter and the triethyl gallium pulse time parameter;
step 2-2: introducing oxygen into the preset reaction chamber according to the second oxygen flow parameter and the oxygen pulse time parameter;
step 2-3: repeating the step 2-1 and the step 2-2 according to the pulse period parameters to obtain the pulse beta-Ga on the surface of the thermally annealed homogeneous substrate layer2O3And (3) a layer.
7. Method according to claim 4, characterized in that said pulsed β -Ga is pulsed according to a second growth parameter2O3The beta-Ga is obtained by the growth on the surface of the layer2O3A layer, comprising:
according to the second triethyl gallium flow parameter, the third oxygen flow parameter and the growth time parameter, simultaneously introducing triethyl gallium and oxygen into the preset reaction chamber so as to obtain the pulse beta-Ga2O3The beta-Ga is obtained by the growth on the surface of the layer2O3And (3) a layer.
8. The method of claim 4, wherein after step 3, the method further comprises:
subjecting the beta-Ga to2O3The layer is used as a new target substrate layer;
repeating the step 2 and the step 3 according to preset preparation parameters to obtain the target beta-Ga2O3A film.
9. The method of claim 4, wherein prior to step 1, the method further comprises:
polishing the homogeneous substrate layer;
placing the polished homogeneous substrate layer into a prefabricated solution for soaking treatment;
cleaning the soaked homogeneous substrate layer;
and carrying out washing treatment on the washed homogeneous substrate layer.
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