CN113640637A - Clamp for auxiliary measurement of performances of thin film and soft and brittle thermoelectric material and application of clamp - Google Patents
Clamp for auxiliary measurement of performances of thin film and soft and brittle thermoelectric material and application of clamp Download PDFInfo
- Publication number
- CN113640637A CN113640637A CN202010345582.2A CN202010345582A CN113640637A CN 113640637 A CN113640637 A CN 113640637A CN 202010345582 A CN202010345582 A CN 202010345582A CN 113640637 A CN113640637 A CN 113640637A
- Authority
- CN
- China
- Prior art keywords
- clamp
- thermoelectric
- metal electrode
- main body
- limiting structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title claims abstract description 91
- 238000005259 measurement Methods 0.000 title claims abstract description 31
- 239000010409 thin film Substances 0.000 title claims abstract description 25
- 239000002184 metal Substances 0.000 claims abstract description 29
- 239000000523 sample Substances 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 27
- 238000004458 analytical method Methods 0.000 claims description 5
- 229910010293 ceramic material Inorganic materials 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims description 3
- 230000006978 adaptation Effects 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000012360 testing method Methods 0.000 abstract description 3
- 238000009434 installation Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 14
- 238000005516 engineering process Methods 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000011056 performance test Methods 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- 230000033228 biological regulation Effects 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 2
- 238000005057 refrigeration Methods 0.000 description 2
- 230000005679 Peltier effect Effects 0.000 description 1
- 230000005678 Seebeck effect Effects 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000002122 magnetic nanoparticle Substances 0.000 description 1
- 238000007709 nanocrystallization Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 239000002918 waste heat Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/04—Housings; Supporting members; Arrangements of terminals
- G01R1/0408—Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Investigating Or Analyzing Materials Using Thermal Means (AREA)
Abstract
The invention discloses a fixture for auxiliary measurement of thermoelectric properties of a thin film and a soft and brittle thermoelectric material, which comprises a fixture main body, a limiting structure and two metal electrode plates, wherein the fixture main body is provided with a plurality of metal electrodes; the two metal electrode plates are both of L-shaped structures; the L-shaped structure is composed of a part A and a part B which are perpendicular to each other; the clamp main body is a U-shaped groove body; the U-shaped groove body comprises two side plates and a bottom plate; the two side plates are provided with gaps; the two side plates are respectively fixed with a metal electrode plate; the part A is fixed on the outer surface of the side plate; the part B penetrates through the gap and extends into the U-shaped groove body; the limiting structure is used for tightly attaching the material to be tested to the part B and is fixed with the clamp. The measuring clamp provided by the invention has the advantages of simple and convenient installation, high flexibility and low manufacturing cost, can directly test the thermoelectric parameters of the material, and greatly improves the measuring range and efficiency.
Description
Technical Field
The invention belongs to the technical field of thermoelectric semiconductor material performance tests, and particularly relates to a fixture for auxiliary measurement of thin film and flexible and brittle thermoelectric material performance in a thermoelectric performance test.
Background
The thermoelectric conversion technology is a technology for realizing mutual conversion of electric energy and heat energy by utilizing a Seebeck effect (thermoelectric generation) and a Peltier effect (electrified refrigeration), has the advantages of small system volume, no moving parts, no abrasion, no noise, no pollution and the like, and has important application in the key fields of waste heat power generation, electronic refrigeration and the like, for example, the thermoelectric generation technology utilizing thermoelectric materials is an irreplaceable energy technology in deep space exploration.
Thermoelectric conversion efficiency is an important parameter for measuring the performance of thermoelectric materials and is determined by a thermoelectric performance figure of merit (ZT value), wherein:
ZT＝S2σΔT/κ
therefore, a thermoelectric material having excellent properties should simultaneously have a large thermoelectromotive force S (generating a large thermoelectromotive voltage), a high electrical conductivity σ (reducing joule loss), and a low thermal conductivity κ (maintaining a large temperature difference). However, the thermoelectric parameters are entangled and coupled with each other, and the increase of one parameter inevitably leads to the decrease of the other parameters, so the increase of the ZT value is seriously restricted, and the effective regulation and control of the thermoelectric parameters which are complexly coupled are the key for improving the ZT value and the conversion efficiency. In recent years, strategies for increasing ZT values have emerged: reducing thermal conductivity (κ) through multi-scale defect design such as point defects, dislocations, interfaces, structural nanocrystallization; high electric transmission performance is realized by adjusting an electronic energy band structure, crystal structure symmetry, phase transformation and the like, and magnetic nanoparticles are introduced to realize electric-acoustic-magnetic cooperative regulation; directly searching for intrinsic low heat conductivity kappa or high power factor PF ═ S2Sigma thermoelectric materials, etc.
Among them, by reducing the dimension, direct growth of a two-dimensional thin-film thermoelectric material is one of the main directions for studying thermoelectric materials. Compared with bulk thermoelectric materials, the thin film thermoelectric materials are suitable for irregular working spaces and precision instruments due to the characteristics of small volume, light weight, variable appearance and good flexibility, and integrated devices and flexible thin film devices can be manufactured by using a photoetching technology.
The existing mature instrument for measuring the thermoelectric performance of the thermoelectric material is generally designed for a bulk thermoelectric material and cannot directly measure the thin-film thermoelectric material. In order to measure the thermoelectric properties of thin films, the following two methods are generally used: the first method is to design or stick a complex electrode plate for a thin film thermoelectric material to measure under the existing instrument, but the method is time-consuming and labor-consuming; the second method is to build a film measuring system by itself, but the method needs a lot of time and money in the early stage, and has low precision and low reliability. ZEM-3 thermoelectric property analysis system is one of thermoelectric material property measurement systems with high acknowledged precision and repeatability in the thermoelectric field, and has the technical characteristics that: the temperature detection adopts an R-type thermocouple; carrying out an ohmic contact self-diagnosis program in a standard mode and outputting a V/I chart; based on Japanese Industrial Standard JIS (thermoelectric energy JIS resistivity JIS SR 1650-2); the sample support adopts a unique contact type balance mechanism, so that the high repeatability of measurement is ensured; and by adopting an advanced data acquisition technology, interference errors caused by the circuit board data acquisition technology are avoided. ZEM-3 measurement temperature range: RT-800 ℃, temperature control precision: ± 0.5K, measurement principle, seebeck coefficient: static direct current; resistivity: a four-terminal method; measurement range, seebeck coefficient: 0.5 muV/K-25V/K; resistivity: 0.2Ohm-2.5KOhm resolution, seebeck coefficient: 10 nV/K; resistivity: 10nOhm measurement accuracy, Seebeck coefficient: less than +/-7 percent; resistivity: less than +/-10%. However, the clamp design of ZEM-3 is designed for measuring a bulk thermoelectric material with higher strength, and is not suitable for measuring a thin-film thermoelectric material and a flexible and brittle material. Firstly, when the ZEM-3 system is used for measuring the thermoelectric film of the rigid substrate, direct measurement cannot be carried out, complex electrode manufacturing needs to be carried out on the sample, so that the sample is damaged, other characterization experiments cannot be carried out, the time for manufacturing the electrode is generally one to two days, the risk of oxidizing the sample is increased, and the progress of the experiments is greatly delayed; secondly, when the ZEM-3 system is used for measuring the soft and brittle materials, because the mode of up-down pressurization is adopted, in the measuring process, due to the rise of temperature, the sample of the materials is deformed in the measuring process, even the sample is crushed, and the sample cannot obtain accurate measuring data; third, the ZEM-3 system is not capable of measuring the performance of a thin thermoelectric film on a flexible substrate at all because the flexible material cannot be held by it at all by means of pressing it up and down.
Disclosure of Invention
The invention aims to overcome the defects of the prior measuring technology similar to ZEM-3 and provide a fixture for assisting in measuring the thermoelectric performance of a thin film and a soft and brittle thermoelectric material. The invention has simple operation and high flexibility during testing, can directly test the thermoelectric parameters of the material, avoids the complex electrode plate manufacturing process, changes the pressurizing direction, protects the soft and brittle material and ensures that the film of the flexible substrate can be tested.
The technical scheme of the invention is as follows:
in a first aspect, the invention provides a fixture for assisting in measuring the performance of a thin film and a soft and brittle thermoelectric material, which comprises a fixture main body, a limiting structure and two metal electrode plates;
the two metal electrode plates are both of L-shaped structures; the L-shaped structure is composed of a part A and a part B which are perpendicular to each other;
the clamp main body is a U-shaped groove body and is used for accommodating a material to be tested; the U-shaped groove body comprises two side plates and a bottom plate;
the two side plates are provided with gaps; the gap allows part B of any metal electrode plate to pass through; the two side plates are respectively fixed with a metal electrode plate; the part A is fixed on the outer surface of the side plate; the part B penetrates through the gap and extends into the U-shaped groove body;
the limiting structure is used for tightly attaching the material to be detected to the part B and is fixed with the clamp;
the clamp main body and the limiting structure are made of insulating materials.
Based on the technical scheme, preferably, the limiting structure comprises a fastener and two limiting blocks; the two limiting blocks are arranged at the opening end of the groove body and are respectively perpendicular to the two side plates; the two limiting blocks are respectively clung to the parts B of the two metal electrode plates; the fastener is the screw, the bottom plate be equipped with screw that the screw looks adaptation.
Based on the above technical scheme, preferably, the number of the screws is two, and the screws are respectively arranged at two ends of the bottom plate.
Based on the technical scheme, preferably, the screw is a socket head cap screw; the distance between the two screw holes is 4-6 mm; the diameter of the screw hole is 1-2 mm.
Based on the above technical solution, preferably, the clamp further includes a rigid insulating substrate; the rigid insulating substrate, the clamp main body, the limiting structure and the two metal electrode plates are independently arranged; the clamp main body is made of insulating ceramic materials.
Based on the technical scheme, preferably, the two metal electrode plates and the clamp are fixed through glue;
in a second aspect, the present invention provides a method for using the above-mentioned clamp, the clamp is used with a thermoelectric material performance measurement system, the measurement system includes a positive electrode, a negative electrode and a thermocouple probe, and the specific method includes:
the method comprises the following steps: tightly attaching the material to be detected to the part B through the limiting structure, and fixing the material to be detected and the clamp;
step two: the clamp is arranged in the thermoelectric material performance measuring system, parts A of two metal electrode plates of the clamp are respectively contacted with the positive electrode and the negative electrode, and the thermocouple probe is contacted with a material to be measured; starting a test program of the thermoelectric material performance measurement system.
Based on the technical scheme, preferably, the screw is screwed in from the outer surface of the bottom plate, and the front end of the screw is in contact with the material to be measured.
Based on the technical scheme, preferably, when the material to be detected is a soft and brittle thermoelectric material or the substrate is a flexible thin film material, the rigid insulating substrate is tightly attached to the non-contact surface between the material to be detected and the part B, and the limiting structure fixes the material to be detected through the rigid insulating substrate.
Based on the technical scheme, the thermoelectric material performance measuring system is preferably an ZEM-3 thermoelectric performance analysis system.
Based on the technical scheme, preferably, the ZEM-3 thermoelectric performance analysis system measures the performance of the material to be measured by a four-terminal method.
Based on the technical scheme, the thermoelectric material performance measuring system is preferably used for measuring the performance of the thermoelectric material with the thickness of less than 3mm, the width of 1.5-4mm and the length of 9-11 mm.
Advantageous effects
1. The clamp for auxiliary measurement of the thermoelectric performance of the thin film and the soft and brittle thermoelectric material can be directly applied to the relatively mature thermoelectric performance measurement system at the present stage, such as ZEM-3, due to the small structure of the clamp. The method not only avoids the manufacturing process of a complex electrode, but also enables the thermoelectric film to be measured in the existing mature measuring system, and ensures the wide range of the measuring temperature and the accuracy of data.
2. The fixture provided by the invention has the advantages that the structure of the U-shaped groove of the main body can effectively replace the upper and lower pressure born by the material, the upper and lower pressure can be converted into the transverse force with smaller stress, and the rigid insulating substrate is added into the fixture to serve as the stress support of the flexible substrate and the flexible and brittle material, so that the measurement limitation of the traditional thermoelectric performance measuring instrument on the thermoelectric material by vertical pressurization is broken, the thin films of the flexible and brittle material and the flexible substrate can use a bulk phase measuring system to measure the thermoelectric performance, and the measurement range and efficiency are greatly improved.
3. In the clamp provided by the invention, the L-shaped metal sheet used as the measuring electrode can directly communicate the sample with the measuring electrode, and ohmic contact between the sample and the metal sheet is ensured by the pressure applied by the transverse screw. Therefore, the film or the sample with smaller upper and lower ends can be effectively measured, the sample is protected by avoiding the adhesion of the electrode, and other characterization experiments can be carried out on the sample.
4. The clamp measuring environment provided by the invention is in a low-pressure He gas, the heat loss can be reduced when the clamp is measured in the environment, the thermal contact between the probe and the sample is enhanced, the temperature difference measurement is more accurate, the influence of the external environment is reduced, and therefore, the error is reduced, and the accuracy of the measuring result is improved.
Drawings
FIG. 1 is a schematic perspective view of the measuring fixture of the present embodiment without clamping the material to be measured;
FIG. 2 is a schematic perspective view of the measuring jig of the present embodiment;
FIG. 3 is a three-dimensional view showing the assembly of the material to be measured on the measuring jig of the present embodiment;
FIG. 4 is an assembled perspective view of the measuring fixture of the present embodiment measured at ZEM-3;
FIG. 5 is ZEM-3 data for the thermoelectric properties of thin films measured using the measuring jig of the present embodiment;
FIG. 6 is ZEM-3 data for measuring thin film thermoelectric performance of a flexible substrate using the measurement fixture of the present embodiment;
the fixture comprises a fixture body 1 made of an insulating ceramic material, a metal electrode plate 2, a hexagon socket head cap screw 3, a material to be detected 4, ZEM-3 upper and lower electrode plates 5, ZEM-3 thermocouple probes 6 and a limiting block 7.
Detailed Description
The technical scheme of the invention is detailed below by combining the accompanying drawings and the embodiment.
As shown in fig. 1-3, the fixture for auxiliary measurement of the performance of the thin film and the soft and brittle thermoelectric material provided in this embodiment includes a fixture main body 1 made of an insulating ceramic material, two metal electrode plates 2, two socket head screws 3, and two limiting blocks 7; the two metal electrode plates 2 are both L-shaped structures; the L-shaped structure is composed of a part A and a part B which are perpendicular to each other; the clamp main body 1 is a U-shaped groove body and is used for containing a material to be tested; the U-shaped groove body comprises two side plates and a bottom plate; the two side plates are provided with gaps; the gap allows part B of any metal electrode sheet 2 to pass through; the two side plates are respectively fixed with a metal electrode plate 2; the part A is fixed on the outer surface of the side plate; the part B penetrates through the gap and extends into the U-shaped groove body; the two limiting blocks 7 are arranged at the opening end of the groove body and are respectively perpendicular to the two side plates; the two limiting blocks 7 are respectively clung to the parts B of the two metal electrode plates 2; the two inner hexagon screws 3 are respectively arranged at two ends of the bottom plate, the bottom plate is provided with screw holes matched with the inner hexagon screws 3, and the distance between the two screw holes is 4-6 mm; the diameter of the screw hole is 1-2mm, and the clamp further comprises a rigid insulating substrate; the rigid insulating substrate, the clamp main body 1, the limiting structure and the two metal electrode plates 2 are independently arranged; the rigid insulating substrate is made of insulating materials.
The thermoelectric performance of the film material is tested in an ZEM-3 system by utilizing the clamp, and the specific process is as follows:
step 1: firstly, a prepared film thermoelectric sample is arranged in a clamp, and as shown in figure 2, a material to be detected is tightly attached to the part B; two inner hexagon screws are screwed in from the outer surface of the bottom plate, and the front ends of the screws are in contact with a material to be detected; when the substrate of the material to be detected is a flexible material, the rigid insulating substrate is tightly attached to the non-contact surface of the material to be detected and the part B, and the front ends of the two socket head cap screws are in contact with the rigid insulating substrate.
Step 2: the fixture filled with the material to be tested is put into an ZEM-3 system, parts A of two metal electrode plates of the fixture are respectively contacted with the positive electrode plate and the negative electrode plate, the thermocouple probe is contacted with the material to be tested, as shown in figure 4, then the contact condition between the film and the probe is tested, the I-V curve of the sample is measured, and if the I-V curve passes through the original point and has a linear proportion exceeding 0.999, the sample and the probe are in good electrical contact.
The performance of the material to be measured is measured by a four-end method, the geometric parameters of the material are input, the required measured temperature point and the required temperature difference are set.
Then according to the formula: r is V/I, R is rho l/s, alpha is delta U/delta T
Wherein l is the distance between the two probes, and s is the cross-sectional area of the sample.
And step 3: the thermoelectric performance parameters of the sample at the set temperature were measured: resistivity and Seebeck coefficient.
Example 1
The measurement substrate is a film of rigid material, and the thermoelectric performance test process from room temperature to 150 ℃ is as follows:
step 1: according to the above steps, first, a thin film thermoelectric sample with a rigid substrate is loaded into a fixture, as shown in FIG. 2;
step 2: the jig containing the film sample to be tested was loaded into the ZEM-3 system, as shown in FIG. 4, and the contact between the film and the probe was tested to determine the I-V curve of the sample. When the I-V curve of the sample is more than 99.9%, the thickness and the width of the sample are input on a sample information interface of software, a measured temperature range and a temperature point required to be measured are set according to the performance and the measurement requirement of the sample, and different temperature differences are set for the accuracy of data, so that the measured performance can be accurate. And after the parameters are set, opening a vacuum pump to pump the cavity, pumping the cavity after the vacuum pumping, introducing He gas to blow the cavity, repeating the process for three times, and introducing the He gas of 0.05Mpa into the cavity after the last vacuum pumping to ensure that the atmosphere for measurement protects the sample.
And step 3: the thermoelectric performance parameters of the samples at the temperatures we set were obtained: resistivity and Seebeck coefficient. As shown in fig. 5.
Example 2
The thermoelectric performance of the thin film with the substrate made of flexible material is measured by using the clamp, and the measuring process is as follows:
step 1: according to the above steps, first, a thin film thermoelectric sample with a substrate of a flexible material is loaded into a fixture, as shown in fig. 2;
step 2: the jig containing the film sample to be tested was loaded into the ZEM-3 system, as shown in FIG. 4, and the contact between the film and the probe was tested to determine the I-V curve of the sample. The geometric parameters of the material are then entered, the desired measured temperature point set and the desired temperature difference established, and the procedure is as in step 2 of example 1.
And step 3: the thermoelectric performance parameters of the samples at the temperatures we set were obtained: resistivity and Seebeck coefficient. As shown in fig. 6.
According to the fixture for auxiliary measurement of thermoelectric properties of the thin film and the soft and brittle thermoelectric material, the thermoelectric properties of the measured material are compared by directly using ZEM-3 system measured data, and the measurement error of the fixture reaches: seebeck coefficient: less than +/-7 percent; resistivity: less than +/-10%.
Claims (9)
1. The fixture for assisting in measuring the performance of the thin film and the soft and brittle thermoelectric material is characterized by comprising a fixture main body, a limiting structure and two metal electrode plates;
the two metal electrode plates are both of L-shaped structures; the L-shaped structure is composed of a part A and a part B which are perpendicular to each other;
the clamp main body is a U-shaped groove body and is used for accommodating a material to be tested; the U-shaped groove body comprises two side plates and a bottom plate;
the two side plates are provided with gaps; the gap allows part B of any metal electrode plate to pass through; the two side plates are respectively fixed with a metal electrode plate; the part A is fixed on the outer surface of the side plate; the part B penetrates through the gap and extends into the U-shaped groove body;
the limiting structure is used for tightly attaching the material to be detected to the part B and is fixed with the clamp;
the clamp main body and the limiting structure are made of insulating materials.
2. The clamp of claim 1, wherein the stop structure comprises a fastener and two stop blocks; the two limiting blocks are arranged at the opening end of the groove body and are respectively perpendicular to the two side plates;
the two limiting blocks are respectively clung to the parts B of the two metal electrode plates;
the fastener is the screw, the bottom plate be equipped with screw that the screw looks adaptation.
3. The clamp of claim 2, wherein two screws are provided at each end of the base plate.
4. The clamp of claim 1, further comprising a rigid insulating substrate; the rigid insulating substrate, the clamp main body, the limiting structure and the two metal electrode plates are independently arranged; the clamp main body is made of insulating ceramic materials.
5. The use method of the clamp according to claims 1-4, wherein the clamp is used in combination with a thermoelectric material performance measurement system, the measurement system comprises a positive electrode, a negative electrode and a thermocouple probe, and the specific method comprises the following steps:
the method comprises the following steps: tightly attaching the material to be detected to the part B through the limiting structure, and fixing the material to be detected and the clamp;
step two: and (3) loading the clamp into the thermoelectric material performance measurement system, wherein the A parts of the two metal electrode plates of the clamp are respectively contacted with the positive electrode and the negative electrode, the thermocouple probe is contacted with a material to be measured, and starting a test program of the thermoelectric material performance measurement system.
6. The method of using the clamp according to claim 5, wherein the screw is screwed from the outer surface of the bottom plate, and the front end of the screw is in contact with the material to be measured.
7. The using method of the clamp according to claim 5, wherein when the material to be tested is a soft and brittle thermoelectric material or the substrate is a flexible thin film material, the rigid insulating substrate is tightly attached to the non-contact surface between the material to be tested and the part B, and the limiting structure fixes the material to be tested through the rigid insulating substrate.
8. The method of using the fixture of claim 5 wherein the thermoelectric material property measurement system is an ZEM-3 thermoelectric property analysis system.
9. The use method of the clamp according to claim 8, wherein the ZEM-3 thermoelectric property analysis system measures the property of the material to be tested by a four-terminal method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010345582.2A CN113640637A (en) | 2020-04-27 | 2020-04-27 | Clamp for auxiliary measurement of performances of thin film and soft and brittle thermoelectric material and application of clamp |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010345582.2A CN113640637A (en) | 2020-04-27 | 2020-04-27 | Clamp for auxiliary measurement of performances of thin film and soft and brittle thermoelectric material and application of clamp |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113640637A true CN113640637A (en) | 2021-11-12 |
Family
ID=78415120
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010345582.2A Pending CN113640637A (en) | 2020-04-27 | 2020-04-27 | Clamp for auxiliary measurement of performances of thin film and soft and brittle thermoelectric material and application of clamp |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113640637A (en) |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2775669Y (en) * | 2005-01-31 | 2006-04-26 | 中国科学院物理研究所 | Spring electrode resistance measurer |
| JP2009182142A (en) * | 2008-01-30 | 2009-08-13 | Sony Corp | Thermoelectric module and thermoelectric system |
| JP2010161171A (en) * | 2009-01-07 | 2010-07-22 | Tokyo Electron Ltd | Probe device |
| CN201903526U (en) * | 2010-12-13 | 2011-07-20 | 华东理工大学 | Conductivity and Seebeck coefficient test device for semiconductor film materials at low temperatures |
| CN103323486A (en) * | 2013-05-24 | 2013-09-25 | 中国科学院电子学研究所 | Test chip for Seebeck coefficient of high resistance material |
| CN103510048A (en) * | 2013-08-19 | 2014-01-15 | 南京清航新材料科技有限公司 | Preparation method of copper nanowire arrays with porous structure and film conductivity measuring method thereof |
| CN104111267A (en) * | 2013-04-17 | 2014-10-22 | 北京市太阳能研究所集团有限公司 | Thin film material Seebeck coefficient measuring instrument |
| JP2016143758A (en) * | 2015-02-02 | 2016-08-08 | 国立研究開発法人物質・材料研究機構 | Bismuth telluride thin film production method and bismuth telluride thin film |
| CN206038730U (en) * | 2016-09-22 | 2017-03-22 | 武汉嘉仪通科技有限公司 | Be used for novel sample platform of thermoelectric parameter testing of film |
| CN207197955U (en) * | 2017-09-19 | 2018-04-06 | 中南大学 | A kind of device of pulse current auxiliary creep ageing |
| CN108459046A (en) * | 2018-05-09 | 2018-08-28 | 哈尔滨工业大学 | The test device of film-type thermoelectric material Seebeck coefficient and conductivity |
| CN109613051A (en) * | 2018-10-24 | 2019-04-12 | 武汉嘉仪通科技有限公司 | A kind of device and method using method of comparison measurement material Seebeck coefficient |
| CN109781781A (en) * | 2019-01-18 | 2019-05-21 | 中国工程物理研究院材料研究所 | A kind of alternating-current measurement device and method of Seebeck coefficient |
-
2020
- 2020-04-27 CN CN202010345582.2A patent/CN113640637A/en active Pending
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2775669Y (en) * | 2005-01-31 | 2006-04-26 | 中国科学院物理研究所 | Spring electrode resistance measurer |
| JP2009182142A (en) * | 2008-01-30 | 2009-08-13 | Sony Corp | Thermoelectric module and thermoelectric system |
| JP2010161171A (en) * | 2009-01-07 | 2010-07-22 | Tokyo Electron Ltd | Probe device |
| CN201903526U (en) * | 2010-12-13 | 2011-07-20 | 华东理工大学 | Conductivity and Seebeck coefficient test device for semiconductor film materials at low temperatures |
| CN104111267A (en) * | 2013-04-17 | 2014-10-22 | 北京市太阳能研究所集团有限公司 | Thin film material Seebeck coefficient measuring instrument |
| CN103323486A (en) * | 2013-05-24 | 2013-09-25 | 中国科学院电子学研究所 | Test chip for Seebeck coefficient of high resistance material |
| CN103510048A (en) * | 2013-08-19 | 2014-01-15 | 南京清航新材料科技有限公司 | Preparation method of copper nanowire arrays with porous structure and film conductivity measuring method thereof |
| JP2016143758A (en) * | 2015-02-02 | 2016-08-08 | 国立研究開発法人物質・材料研究機構 | Bismuth telluride thin film production method and bismuth telluride thin film |
| CN206038730U (en) * | 2016-09-22 | 2017-03-22 | 武汉嘉仪通科技有限公司 | Be used for novel sample platform of thermoelectric parameter testing of film |
| CN207197955U (en) * | 2017-09-19 | 2018-04-06 | 中南大学 | A kind of device of pulse current auxiliary creep ageing |
| CN108459046A (en) * | 2018-05-09 | 2018-08-28 | 哈尔滨工业大学 | The test device of film-type thermoelectric material Seebeck coefficient and conductivity |
| CN109613051A (en) * | 2018-10-24 | 2019-04-12 | 武汉嘉仪通科技有限公司 | A kind of device and method using method of comparison measurement material Seebeck coefficient |
| CN109781781A (en) * | 2019-01-18 | 2019-05-21 | 中国工程物理研究院材料研究所 | A kind of alternating-current measurement device and method of Seebeck coefficient |
Non-Patent Citations (1)
| Title |
|---|
| 姚飞等: "金属基NiCr-NiSi薄膜热电偶的制备及性能研究", 《电子元件与材料》 * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN112198469B (en) | Hall effect automatic measurement system and measurement method thereof | |
| CN108459046B (en) | Device for testing Seebeck coefficient and conductivity of thin film type thermoelectric material | |
| CN101038265A (en) | Device for measuring Seebeck coefficient and resistivity of semi-conductor film material | |
| CN112034002B (en) | Device and method for measuring Seebeck coefficient of thermoelectric material | |
| CN107300663B (en) | Test method of semiconductor junction temperature test device | |
| CN109060759B (en) | Semiconductor film thermal conductivity analysis method based on Raman spectrum testing technology | |
| CN111238672B (en) | Superconducting tape dynamic temperature measurement method based on magnetic microscopy | |
| CN113690154A (en) | Method for monitoring pin reliability of pin package in situ and in real time by using four-probe method | |
| CN113640637A (en) | Clamp for auxiliary measurement of performances of thin film and soft and brittle thermoelectric material and application of clamp | |
| CN219777762U (en) | Device for testing temperature coefficient of resistance | |
| CN109725183B (en) | Probe for portable thermoelectric potential detector | |
| CN111879425B (en) | In-situ temperature measuring gasket in diamond anvil cell press and preparation method thereof | |
| CN113406397B (en) | Low-temperature solid dielectric constant measuring method | |
| CN108761172B (en) | High-precision measurement method for Seebeck coefficient of thermoelectric material | |
| CN112098457B (en) | Polynomial regression calibration method of thermal conductivity measuring instrument | |
| CN110596185A (en) | Thermoelectric fiber material Seebeck value testing device | |
| CN109115830B (en) | Nondestructive testing device and method for three-dimensional anisotropic thermal conductivity of material | |
| CN207336701U (en) | Semiconductor junction temperature test device | |
| JP4912056B2 (en) | Prober chuck | |
| CN1013408B (en) | Method for nondestructive inspection of residual stress | |
| CN219369636U (en) | Variable-temperature resistivity testing device | |
| CN112858401B (en) | Thermal resistance testing device and method for detecting brazing defects of heterogeneous workpieces | |
| CN210775299U (en) | Thermoelectric fiber material Seebeck value testing device | |
| Okeil et al. | High Throughput Apparatus for Semiconductor Device Characterization in a Magnetic Field at Extreme High Temperatures | |
| CN216900318U (en) | Thermal diffusion coefficient measuring device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20211112 |
|
| RJ01 | Rejection of invention patent application after publication |