CN113637957A

CN113637957A - Separated remote plasma source equipment

Info

Publication number: CN113637957A
Application number: CN202011514796.4A
Authority: CN
Inventors: 洪再和
Original assignee: Individual
Current assignee: Individual
Priority date: 2020-05-11
Filing date: 2020-12-21
Publication date: 2021-11-12
Also published as: TW202143800A

Abstract

The invention relates to a separated remote plasma source device, which comprises two independent plasma source generating devices and a radio frequency power supply device, wherein the radio frequency power supply device does not need to be arranged on a semiconductor processing device, so that the space occupied by the radio frequency power supply device on the semiconductor processing device is effectively reduced; moreover, because the volume and the weight of the plasma source generating device are reduced, the working hours of assembling and disassembling the plasma source generating device by maintainers are relatively reduced, and the installation and the subsequent maintenance operation are facilitated.

Description

Separated remote plasma source equipment

Technical Field

The present invention relates to a remote plasma source apparatus, and more particularly, to a separated remote plasma source apparatus.

Background

Semiconductor processing equipment in a semiconductor equipment factory, such as PECVD plasma processing equipment, needs to be cleaned after the process is finished, and a remote plasma source equipment is additionally arranged in order to enhance the cleaning efficiency of the cavity of the semiconductor processing equipment.

As shown in FIG. 4, the remote plasma source apparatus 70 provides a plasma source outside the semiconductor processing apparatus 50 for cleaning the chamber 51, thereby accelerating the chamber cleaning. Generally, the remote plasma source apparatus 70 is installed above the semiconductor processing apparatus 50 to facilitate the output of cleaning plasma sources to the reaction chambers 51; however, according to the actual maintenance experience, the remote plasma source apparatus 70 is often maintained partially by the matching network components in the plasma source apparatus, because the remote plasma source apparatus has a large volume and a heavy weight, when the maintenance personnel replace the matching network components, the maintenance personnel need to take great effort to disassemble and assemble the remote plasma source apparatus, which results in maintenance cost and time and labor consumption, and thus further improvement is needed.

Disclosure of Invention

In view of the above-mentioned disadvantages of the conventional remote plasma source apparatus, the present invention provides a remote plasma source apparatus with a separate structure.

The main technical means used to achieve the above purpose is to make the separate remote plasma source apparatus include:

a plasma source generating apparatus includes:

a first housing having a radio frequency power input terminal, an AC power input terminal, an air inlet and a plasma discharge port;

a plasma chamber disposed in the first housing and communicating with the gas inlet and the plasma discharge port; and

a matching network disposed in the first housing, electrically connected to the RF power input and the AC power input, and coupled to the plasma chamber;

an RF power supply device, comprising:

a second housing having an RF power output; and

a radio frequency power supply circuit arranged in the second shell and electrically connected to the radio frequency power supply output end; and

a radio frequency power line electrically connected to the radio frequency power input terminal of the plasma source generating device and the radio frequency power output terminal of the radio frequency power supply device.

From the above description, the remote plasma source apparatus of the present invention comprises two independent plasma source generating devices and radio frequency power supply devices, i.e. there is no radio frequency power supply device in the plasma source generating device, and the radio frequency power supply device does not need to be installed on the semiconductor processing apparatus, so as to effectively reduce the space occupied by the plasma source apparatus; moreover, because the volume and the weight of the plasma source generating device are reduced, the working hours of assembling and disassembling the plasma source generating device by maintainers are relatively reduced, and the installation and the subsequent maintenance operation are facilitated.

Drawings

FIG. 1: a schematic structure of the separated remote plasma source apparatus of the present invention.

FIG. 2: the present invention relates to a structure diagram of a separated remote plasma source equipment installed on a semiconductor processing equipment.

FIG. 3: the invention relates to a circuit diagram of a matching network.

FIG. 4: a schematic diagram of a remote plasma source apparatus installed in a semiconductor processing apparatus.

Wherein, the reference numbers:

1: separate remote plasma equipment

10 plasma source generating apparatus

11 first housing

111 radio frequency power supply input terminal

112, input end of AC power supply

113 air inlet

114 plasma discharge port

12 plasma chamber

20 matching network

21 matching network

211 fixed impedance element

212 variable impedance element

213 actuator

22 power supply circuit

30 radio frequency power supply device

31 second housing

311 radio frequency power supply output terminal

312 second AC power input terminal

32 radio frequency power supply circuit

40 radio frequency power line

50 semiconductor processing equipment

51 reaction chamber

61 radio frequency power supply

70 remote plasma equipment

Detailed Description

The present invention is improved for remote plasma equipment to make the maintenance operation more convenient, so the technical content of the present invention will be described in detail with reference to the following embodiments and drawings.

Referring to fig. 1, in an embodiment of the separated remote plasma apparatus of the present invention, the separated remote plasma apparatus 1 includes a plasma source generating device 10, a radio frequency power supply device 30 and a radio frequency power line 40; wherein the RF power line 40 is connected between the plasma source generating device 10 and the RF power supply device 30.

The plasma source generating apparatus 10 comprises a first housing 11, a plasma chamber 12 and a matching network 20; wherein the first housing 11 comprises a radio frequency power input 111, a first AC power input 112, a gas inlet 113 and a plasma discharge port 114. The plasma chamber 12 is disposed in the first housing 11 and is communicated with the gas inlet 113 and the plasma discharge port 114; wherein the GAS inlet 113 is connected to an external GAS cylinder GAS for introducing GAS for dissociating to generate plasma into the plasma chamber 12. The matching network 20 is disposed in the first housing 11, electrically connected to the RF power input 111 and the first AC power input 112, and coupled to the plasma chamber 12.

In this embodiment, the first AC power input terminal 112 of the first housing 11 is connected to an AC power source AC; meanwhile, the matching network 20 receives RF power from the RF power supply 30 through the RF power input 111 and outputs the RF power to the plasma chamber 12, so that the dissociation of the gas in the plasma chamber 12 can be initiated to generate a plasma source, which is guided from the plasma chamber 12 to the plasma discharge port 114, as shown in FIG. 2, and enters the reaction chamber 51 of a semiconductor processing apparatus 50.

Referring to fig. 3, the matching network 20 includes a matching network unit 21 and a power circuit 22; wherein the matching network unit 21 comprises a plurality of

fixed impedance elements

211, 212. In the embodiment, the matching network unit 21 is an L-shaped network, and the fixed impedance element 211 includes an inductor L and capacitors CL and CT.

The rf power supply device 30 includes a second housing 31 and an rf power circuit 32; the second housing 31 includes a rf power output terminal 311 and a second AC power input terminal 312, and the rf power circuit 32 is disposed in the second housing 31 and electrically connected to the rf power output terminal 311 and the second AC power input terminal 312, and the AC power obtained through the second AC power input terminal 312 is converted into the rf power and then output from the rf power output terminal 311. In the embodiment, the RF power source generated by the RF power circuit 32 is a high frequency RF power source with a frequency range of 2MHz + -10% to 13.56MHz + -10%, and the high frequency RF power source generates a higher plasma source energy, thereby improving the cleaning effect of the plasma on the reaction chamber 51 of the semiconductor processing apparatus 50.

The RF power line 40 is electrically connected between the RF power input 111 of the plasma source generating device 10 and the RF power output 311 of the RF power supply device 30.

Referring to fig. 2, the plasma source generating device 10 and the rf power supply device 30 of the separated remote plasma apparatus 1 are independent devices, so that the plasma source generating device 10 can be installed above the semiconductor processing apparatus 50, and the rf power supply device 30 can be disposed around the semiconductor processing apparatus 50, for example, disposed together with two rf power sources 61 connected to the semiconductor processing apparatus 50, and electrically connected to the plasma source generating device 10 through the rf power line 40.

In summary, the plasma source generating device of the present invention is installed above the semiconductor processing equipment, and the volume and weight of the plasma source generating device are smaller and lighter than the existing whole-machine type remote plasma source equipment, so that not only the occupied space on the semiconductor processing equipment can be effectively reduced, but also the man-hour for the maintenance personnel to assemble and disassemble the plasma source generating device is relatively convenient, and the installation and the subsequent maintenance operation are facilitated. Furthermore, the RF power supply device of the present invention provides the plasma source generating device with a fixed high-frequency RF power source, which can effectively enhance the cleaning effect of the plasma source on the semiconductor processing equipment.

Although the present invention has been described with reference to specific embodiments, it will be understood by those skilled in the art that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.

Claims

1. A split remote plasma source apparatus, comprising:

a plasma source generating apparatus includes:

a first housing having a radio frequency power input terminal, a first AC power input terminal, an air inlet and a plasma discharge port;

a matching network disposed in the first housing, electrically connected to the RF power input and the first AC power input, and coupled to the plasma chamber;

an RF power supply device, comprising:

a second housing having an RF power output; and

2. The discrete remote plasma source apparatus of claim 1, wherein the first ac power input of the matching network is connected to an ac power source.

3. The discrete remote plasma source apparatus of claim 1 or 2,

the second shell comprises a second alternating current power supply input end which is electrically connected to the alternating current power supply;

the radio frequency power supply circuit is electrically connected to the second alternating current power supply input end.

4. The discrete remote plasma source apparatus of claim 3, wherein the RF power circuit generates a high frequency RF power in the range of 2MHz to 13.56 MHz.

5. The discrete remote plasma source apparatus of claim 4, wherein the high frequency RF power source is a high frequency variable frequency RF power source.

6. The discrete remote plasma source apparatus of claim 1 or 2, wherein the matching network comprises:

a power supply circuit connected to the first AC power input end for converting the AC power into DC power; and

and the matching network unit is electrically connected to the power circuit and consists of a plurality of fixed impedance elements.

7. The discrete remote plasma source apparatus of claim 6, wherein the fixed impedance devices comprise inductors and capacitors.

8. The discrete remote plasma source apparatus of claim 3, wherein the matching network comprises:

9. The discrete remote plasma source apparatus of claim 8, wherein the fixed impedance devices comprise capacitors.

10. The discrete remote plasma source apparatus of claim 9, wherein the fixed impedance device comprises an inductor.