CN113637954A - Semiconductor processing equipment with external plasma source and external plasma source thereof - Google Patents
Semiconductor processing equipment with external plasma source and external plasma source thereof Download PDFInfo
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- CN113637954A CN113637954A CN202011514962.0A CN202011514962A CN113637954A CN 113637954 A CN113637954 A CN 113637954A CN 202011514962 A CN202011514962 A CN 202011514962A CN 113637954 A CN113637954 A CN 113637954A
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- power supply
- plasma source
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- electrically connected
- plasma
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 34
- 238000004140 cleaning Methods 0.000 claims abstract description 13
- 238000006243 chemical reaction Methods 0.000 claims description 16
- 239000003990 capacitor Substances 0.000 claims description 2
- 238000012423 maintenance Methods 0.000 abstract description 10
- 238000010248 power generation Methods 0.000 abstract 2
- 238000009434 installation Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Plasma Technology (AREA)
Abstract
The invention relates to a semiconductor processing equipment with an external cleaning plasma source and an external plasma source thereof, wherein the external plasma source comprises a plasma source generating device, a radio frequency power supply device and a switching device; wherein the switching device is connected between the RF power supply device and the plasma power generation device to determine the RF power generated by the RF power supply device to be output to the plasma power generation device or the semiconductor processing equipment; because the external plasma source and the semiconductor processing equipment use the radio frequency power supply with the same frequency, the space for arranging the external plasma source can be effectively reduced, and the plasma source generating device is not internally provided with the radio frequency power supply device, so that the occupied space on the semiconductor processing equipment is effectively reduced, and the installation and the subsequent maintenance operation are facilitated.
Description
Technical Field
The present invention relates to a remote plasma source apparatus, and more particularly, to a semiconductor processing apparatus having an external plasma source and an external plasma source thereof.
Background
Semiconductor processing equipment in a semiconductor equipment factory, such as PECVD plasma processing equipment, uses two sets of radio frequency power supplies, wherein plasma is generated in a reaction chamber to perform semiconductor processing on wafers, and the reaction chamber needs to be cleaned after the processing is finished.
As shown in FIG. 4, the remote plasma source apparatus 70 is applied to the semiconductor processing apparatus 50 to provide a plasma source for cleaning the reaction chamber 51, thereby accelerating the cleaning effect of the reaction chamber. Generally, the remote plasma source apparatus 70 is installed above the semiconductor processing apparatus 50 to facilitate the output of cleaning plasma sources to the reaction chambers 51; however, since the remote plasma source apparatus 70 is provided with an rf power circuit 71, a matching network 72 and a plasma chamber 73, the rf power circuit 71 is dedicated to provide rf power for the plasma chamber 73, which is generally rf power with a frequency of 400Hz, and the plasma chamber 73 is filled with gas and then dissociated to generate a plasma source, which cleans the reaction chamber 51 of the semiconductor processing apparatus 50.
According to the practical maintenance experience, the maintenance part of the remote plasma source equipment 70 is the component for the matching network 72 frequently, because the remote plasma source equipment 70 has a large volume and a heavy weight, when the maintenance personnel replace the component for the matching network 72, the maintenance personnel need to take great effort to disassemble and assemble the remote plasma source equipment 70, which causes maintenance cost and time and labor waste, and further improvement is needed.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior remote plasma source apparatus, it is a primary object of the present invention to provide a semiconductor processing apparatus with an external cleaning plasma source.
The main technical means used to achieve the above purpose is to make the semiconductor processing equipment with external cleaning plasma source include:
the device comprises an equipment body, a first electrode and a second electrode, wherein the equipment body comprises a reaction chamber;
a first RF power supply electrically connected to the first electrode; and
an external plasma source comprising:
a plasma source generating device disposed above the apparatus body and including:
a first housing having a first RF power input, an AC power input, an air inlet and a plasma discharge port; wherein the plasma discharge port is communicated with the reaction chamber;
a plasma chamber disposed in the first housing and communicating with the gas inlet and the plasma discharge port; and
a matching network disposed in the first housing, electrically connected to the first RF power input and the AC power input, and coupled to the plasma chamber;
a switch, including a second RF power input terminal, a first switch terminal and a second switch terminal; wherein the first switching terminal is electrically connected to the first RF power input terminal of the plasma source generating device, and the second switching terminal is electrically connected to the second electrode of the apparatus body; and
a second RF power supply device, comprising:
a second housing having a RF power output electrically connected to the second RF power input of the switch; and
and the radio frequency power supply circuit is arranged in the second shell and is electrically connected to the radio frequency power supply output end.
As can be seen from the above description, the semiconductor processing apparatus of the present invention is provided with an external plasma source, the external plasma source comprises a plasma source generating device, a second RF power supply device and a switch, the second RF power supply device is electrically connected to the plasma source generator and the apparatus body through the switch, and the switch determines the RF power generated by the second RF power supply device to be output to the plasma source generator or the apparatus body; therefore, the plasma source generating device does not need to be internally provided with a radio frequency power supply circuit, so that the space occupied by an external plasma source arranged on semiconductor processing equipment is effectively reduced, and the subsequent maintenance operation is facilitated; furthermore, since the second RF power supply device of the external plasma source can provide RF power to the apparatus body through the switch, the semiconductor processing apparatus of the present invention can dispense with an RF power supply.
The main technical means used to achieve the above purpose is to make the external plasma source include:
a plasma source generating apparatus includes:
a first housing having a first RF power input, an AC power input, an air inlet and a plasma discharge port;
a plasma chamber disposed in the first housing and communicating with the gas inlet and the plasma discharge port; and
a matching network disposed in the first housing, electrically connected to the first RF power input and the AC power input, and coupled to the plasma chamber;
a switch, including a second RF power input terminal, a first switch terminal and a second switch terminal; wherein the first switching terminal is electrically connected to the first RF power input terminal of the plasma source generating device; and
an RF power supply device, comprising:
a second housing having a RF power output electrically connected to the second RF power input of the switch; and
and the radio frequency power supply circuit is arranged in the second shell and is electrically connected to the radio frequency power supply output end.
As can be seen from the above description, the external plasma source of the present invention comprises a plasma source generating device, a rf power supply device and a switch, wherein the rf power supply device is electrically connected to the plasma source generator and the apparatus body through the switch, and the switch determines that the rf power generated by the rf power supply device is output to the plasma source generator or the apparatus body; therefore, the plasma source generating device does not need to be internally provided with a radio frequency power supply circuit, so that the space and the weight occupied by an external plasma source arranged on semiconductor processing equipment are effectively reduced, and the subsequent maintenance operation is facilitated.
Drawings
FIG. 1: the present invention provides a structure diagram of a semiconductor processing equipment with an external cleaning plasma source.
FIG. 2: the present invention has a schematic structure of an external plasma source.
FIG. 3: the invention relates to a circuit diagram of a matching network.
FIG. 4: a schematic diagram of a remote plasma source apparatus installed in a semiconductor processing apparatus.
Wherein, the reference numbers:
1 external plasma source
10 plasma source generating apparatus
11 first housing
111 input end of first radio frequency power supply
112 first AC power input terminal
113 air inlet
114 plasma discharge port
12 plasma chamber
20 matching network
Matching network element 21
211 fixed impedance element
212 variable impedance element
213 actuator
22 power supply circuit
30 second radio frequency power supply device
31 second housing
311 radio frequency power supply output terminal
312 second AC power input terminal
32 radio frequency power supply circuit
40 switching device
41 input end of second radio frequency power supply
42 first switching terminal
43 second switching terminal
50 equipment body
51 reaction chamber
511 first electrode
512 second electrode
52 first RF power supply
53 impedance matcher
70 remote plasma equipment
Detailed Description
The invention aims at the improvement of semiconductor processing equipment for cleaning a reaction cavity by using an external plasma source, so that the maintenance operation is simpler and more convenient, and the equipment configuration cost is also reduced. The technical contents of the present invention will be described in detail with reference to the embodiments and the drawings.
Referring first to FIG. 1, an embodiment of a semiconductor processing apparatus with an external plasma source for cleaning according to the present invention comprises an apparatus body 50, a first RF power supply 52 and an external plasma source 1; the apparatus body 50 includes a reaction chamber 51, a first electrode 511 and a second electrode 512, wherein the first rf power supply 52 is electrically connected to the first electrode 511.
Referring to FIG. 2, the external plasma source 1 includes: a plasma source generating device 10, a second RF power supply device 30 and a switch 40; wherein the switch 40 is connected between the apparatus body 50, the plasma source generating device 10 and the second RF power supply device 30.
The plasma source generating device 10 is disposed above the apparatus body 50 and includes a first housing 11, a plasma chamber 12 and a matching network 20; wherein the first housing 11 comprises a first RF power input 111, a first AC power input 112, an inlet 113 and a plasma discharge port 114; wherein the plasma discharge port 114 communicates with the reaction chamber 51 of the apparatus body 50. The plasma chamber 12 is disposed in the first housing 11 and is communicated with the gas inlet 113 and the plasma discharge port 114; wherein the GAS inlet 113 is connected to an external doping GAS GAS comprising NF3A dopant gas for dissociating to generate plasma is introduced into the plasma chamber 12. The matching network 20 is disposed in the first housing 11, electrically connected to the first RF power input 111 and the first AC power input 112, and coupled to the plasma chamber 12.
In this embodiment, the first AC power input terminal 112 of the first housing 11 is connected to an AC power source AC; meanwhile, the matching network 20 will obtain the RF power from the second RF power supply 30 through the first RF power input terminal 111 and the switch 40, and will match the output impedance of the second RF power supply 30 and the switch 40 with the impedance of the plasma chamber 12, and then output the RF power to the plasma chamber 12, so that the gas in the plasma chamber 12 starts to dissociate to generate the plasma source, which is guided from the plasma chamber 12 to the plasma discharge port 114 and enters the reaction chamber 51 of the apparatus body 50.
Referring to fig. 3, the matching network 20 includes a matching network unit 21 and a power circuit 22; in the present embodiment, the matching network unit 21 is composed of a plurality of fixed impedance elements 211 and 212. In the present embodiment, the matching network unit 21 is an L-shaped network, and the fixed impedance elements 211 and 212 are an inductor L and capacitors CL and CT. The power circuit 22 is electrically connected to the first AC power input terminal 112, and converts AC power into dc power for the working power of the matching network unit 21.
The switch 40 includes a second rf power input terminal 41, a first switch terminal 42 and a second switch terminal 43; wherein the first switching terminal 42 is electrically connected to the first RF power input terminal 111 of the plasma source generating apparatus 10, and the second switching terminal 43 is electrically connected to the second electrode 512 of the apparatus body 50. In the present embodiment, the second switch end 42 is electrically connected to the second electrode 512 of the apparatus body 50 through an impedance matcher 53.
The second rf power supply device 30 includes a second housing 31 and an rf power circuit 32; the second housing 31 includes a rf power output terminal 311 and a second AC power input terminal 312, the rf power circuit 32 is disposed in the second housing 31 and electrically connected to the rf power output terminal 311 and the second AC power input terminal 312, the second AC power input terminal 312 is connected to the AC power AC to convert the AC power AC into rf power and output the rf power from the rf power output terminal 311, the rf power output terminal 311 is electrically connected to the second rf power input terminal 41 of the switch 40, and the switch 40 determines to output the rf power to the first rf power input terminal 111 of the plasma source generating device 10 or the second electrode 512 of the apparatus body 50. In the present embodiment, the rf power generated by the rf power circuit 32 is a high frequency rf power with a frequency of 13.56MHz (+ -10%), so that the plasma source generating device 10 and the apparatus body 50 share the same rf power, and the plasma source generating device 10 generates a higher rf power, thereby improving the cleaning effect of the plasma on the reaction chamber 51 of a semiconductor processing apparatus 50.
In summary, the plasma source generating device of the external plasma source of the present invention is not built with a rf power circuit, but is connected to the second rf power supply device through the switch, so that when being installed on the semiconductor processing equipment, the occupied space and weight can be effectively reduced, thereby facilitating the subsequent maintenance operation. Furthermore, since the second RF power supply device of the external plasma source can provide RF power to the apparatus body through the switch, the semiconductor processing apparatus of the present invention can dispense with an RF power supply.
Although the present invention has been described with reference to specific embodiments, it will be understood by those skilled in the art that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. A semiconductor processing apparatus having an external cleaning plasma source, comprising:
the device comprises an equipment body, a first electrode and a second electrode, wherein the equipment body comprises a reaction chamber;
a first RF power supply electrically connected to the first electrode; and
an external plasma source comprising:
a plasma source generating device disposed above the apparatus body and including:
a first housing having a first RF power input, a first AC power input, an air inlet and a plasma discharge port; wherein the plasma discharge port is communicated with the reaction chamber;
a plasma chamber disposed in the first housing and communicating with the gas inlet and the plasma discharge port; and
a matching network disposed in the first housing, electrically connected to the first RF power input and the first AC power input, and coupled to the plasma chamber;
a switch, including a second RF power input terminal, a first switch terminal and a second switch terminal; wherein the first switching terminal is electrically connected to the first RF power input terminal of the plasma source generating device, and the second switching terminal is electrically connected to the second electrode of the apparatus body; and
a second RF power supply device, comprising:
a second housing having a RF power output electrically connected to the second RF power input of the switch; and
and the radio frequency power supply circuit is arranged in the second shell and is electrically connected to the radio frequency power supply output end.
2. The semiconductor processing apparatus of claim 1, wherein:
the input end of the alternating current power supply of the matching network is connected to an alternating current power supply; and
the second switching end of the switcher is electrically connected to the first electrode of the equipment body through an impedance matcher.
3. The semiconductor processing apparatus having an external cleaning plasma source of claim 1 or 2, wherein:
the second shell comprises a second alternating current power supply input end which is electrically connected to the alternating current power supply; and
the radio frequency power supply circuit is electrically connected to the second alternating current power supply input end.
4. The semiconductor processing apparatus having an external cleaning plasma source of claim 3, wherein the RF power circuit generates a high frequency variable frequency RF power.
5. The semiconductor processing apparatus of claim 4, wherein the RF power source has a frequency of 13.56MHz ± 10%.
6. The semiconductor processing apparatus of claim 1 or 2, wherein the matching network comprises:
the power supply circuit is connected to the alternating current power supply through the first alternating current power supply input end and converts the alternating current power supply into a direct current power supply; and
a matching network unit connected to the power circuit to obtain the DC power supply and including multiple fixed impedance elements.
7. The semiconductor processing apparatus of claim 6, wherein: the fixed impedance elements are inductors and capacitors.
8. An external plasma source for a semiconductor processing apparatus, comprising:
a plasma source generating apparatus includes:
a first housing having a first RF power input, an AC power input, an air inlet and a plasma discharge port;
a plasma chamber disposed in the first housing and communicating with the gas inlet and the plasma discharge port; and
a matching network disposed in the first housing, electrically connected to the first RF power input and the AC power input, and coupled to the plasma chamber;
a switch, including a second RF power input terminal, a first switch terminal and a second switch terminal; wherein the first switching terminal is electrically connected to the first RF power input terminal of the plasma source generating device; and
an RF power supply device, comprising:
a second housing having a RF power output electrically connected to the second RF power input of the switch; and
and the radio frequency power supply circuit is arranged in the second shell and is electrically connected to the radio frequency power supply output end.
9. An external plasma source as claimed in claim 8, wherein said RF power circuit generates a high frequency variable frequency RF power.
10. An external plasma source as claimed in claim 9, wherein said RF power source has a frequency of 13.56MHz ± 10%.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW109115636 | 2020-05-11 | ||
| TW109115636A TW202143799A (en) | 2020-05-11 | 2020-05-11 | Semiconductor procedure equipment with external plasma source and external plasma source thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113637954A true CN113637954A (en) | 2021-11-12 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011514962.0A Pending CN113637954A (en) | 2020-05-11 | 2020-12-21 | Semiconductor processing equipment with external plasma source and external plasma source thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN113637954A (en) |
| TW (1) | TW202143799A (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020153101A1 (en) * | 2001-04-21 | 2002-10-24 | Tue Nguyen | Semiconductor processing system and method |
| TW200807545A (en) * | 2006-04-21 | 2008-02-01 | New Power Plasma Co Ltd | Plasma processing system |
| CN101500370A (en) * | 2008-02-01 | 2009-08-05 | 恩益禧电子股份有限公司 | Plasma processing apparatus |
| CN101736326A (en) * | 2008-11-26 | 2010-06-16 | 中微半导体设备(上海)有限公司 | Capacitively coupled plasma processing reactor |
| TW201029523A (en) * | 2008-10-21 | 2010-08-01 | Applied Materials Inc | Plasma source for chamber cleaning and process |
| TW201234936A (en) * | 2011-01-25 | 2012-08-16 | Advanced Energy Ind Inc | Electrostatic remote plasma source |
| US20160086772A1 (en) * | 2014-09-24 | 2016-03-24 | Applied Materials, Inc. | Auto frequency tuned remote plasma source |
-
2020
- 2020-05-11 TW TW109115636A patent/TW202143799A/en unknown
- 2020-12-21 CN CN202011514962.0A patent/CN113637954A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020153101A1 (en) * | 2001-04-21 | 2002-10-24 | Tue Nguyen | Semiconductor processing system and method |
| TW200807545A (en) * | 2006-04-21 | 2008-02-01 | New Power Plasma Co Ltd | Plasma processing system |
| CN101500370A (en) * | 2008-02-01 | 2009-08-05 | 恩益禧电子股份有限公司 | Plasma processing apparatus |
| TW201029523A (en) * | 2008-10-21 | 2010-08-01 | Applied Materials Inc | Plasma source for chamber cleaning and process |
| CN101736326A (en) * | 2008-11-26 | 2010-06-16 | 中微半导体设备(上海)有限公司 | Capacitively coupled plasma processing reactor |
| TW201234936A (en) * | 2011-01-25 | 2012-08-16 | Advanced Energy Ind Inc | Electrostatic remote plasma source |
| US20160086772A1 (en) * | 2014-09-24 | 2016-03-24 | Applied Materials, Inc. | Auto frequency tuned remote plasma source |
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| Publication number | Publication date |
|---|---|
| TW202143799A (en) | 2021-11-16 |
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