CN1136334C - Improved chemical gas phase deposition equipment - Google Patents
Improved chemical gas phase deposition equipment Download PDFInfo
- Publication number
- CN1136334C CN1136334C CNB01110452XA CN01110452A CN1136334C CN 1136334 C CN1136334 C CN 1136334C CN B01110452X A CNB01110452X A CN B01110452XA CN 01110452 A CN01110452 A CN 01110452A CN 1136334 C CN1136334 C CN 1136334C
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- Prior art keywords
- boiler tube
- filter screen
- particulate
- lpcvd device
- tube formula
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Abstract
The present invention relates to an improved chemical gas phase deposition device. The improved chemical gas phase deposition device comprises a furnace tube, a gas pumping device and a filter screen and a filter screen, wherein a chip is arranged in the furnace tube, a chemical gas phase deposition reaction is carried out on the chip, and waste gases and particles are simultaneously produced; the gas pumping device is connected with the furnace tube for pumping out the waste gases and the particles from the furnace tube; the filter screen is arranged between the furnace tube and the gas pumping device for intercepting the particles, and the filter screen extends in three-dimensional space.
Description
The present invention relates to a kind of chemical vapor deposition unit, particularly relate to a kind of device of the chemical vapour deposition that usefulness is good, duration of service is long of the manufacturing that is used for the semiconductor-type integrated circuit (IC) chip.
Chemical vapour deposition (Chemical Vapor Deposition is called for short CVD) is a mode of utilizing chemical reaction, in reactor, reactant gases is generated solid-state resultant, and is deposited on a kind of film deposition techniques of chip surface.And in the manufacturing process of CVD, it can be divided into normal pressure (AP), low pressure (LP), reach electricity slurry (PE) three kinds of different depositional modes.
See also Fig. 1, Figure 1 shows that a boiler tube formula LPCVD equipment commonly used.Boiler tube 10 is constituted with the quartz (Quartz) after annealing (Annealed), by external heated device (not icon) boiler tube 10 is heated.Reactant gases is sent in the boiler tube 10 from fire door.The chip that is deposited places equally with on the made brilliant boat (Boat) of quartz, and along with brilliant boat is put into the appropriate location of boiler tube, so that deposit.The remaining waste gas of deposition reaction then utilizes vacuum pump 30 to discharge.In addition, a main valve (MainValve) 45 is set in exhaust line, is used to control the open and close of exhaust line.
Yet, when carrying out chemical vapour deposition reaction, have manyly in the boiler tube 10 by by product and the unreacted particulate that reactant gases produced completely, if these particulates will cause obstruction along with waste gas enters in the pump 30, influence the life-span of pump.For avoiding this kind situation to take place, therefore one particulate resistance sinking device (Particle Trap) 20 is set in exhaust line, as shown in Figure 2, in particulate resistance sinking device 20, multi-level blade (MultilayeredLeaflet) 22 is installed, in order to the particulate in the absorption waste gas.Simultaneously, in exhaust line, one filter screen 40 (as shown in Figure 3) more is set, with the particulate in the further filtering waste gas near vacuum pump 30 places.
Yet after operation after a while, particulate can clog whole filtering net 40, has influence on the pumping efficiency of vacuum pump 30, therefore essential periodic cleaning filter screen, and the normal running of ability holding vacuum pump, this is a burden for the staff.For example, be that (Tetra-Ethyl-Ortho-Silicate, TEOS), operate usually just needs to clear up filter screen to the tetraethoxy silicomethane about one month to reactant gases.If the settled layer of reaction is borosilicate glass (BSG), just needed cleaning in common about one month, and if settled layer is arsenic silex glass (AsSG), then about about two months needs to clear up.
On the other hand, if wish the particulate that filtering is less, it is less that the mesh of filter screen must be done, yet if mesh is too small, can hinder the circulation of waste gas again, influences pumping efficiency.
In order to overcome the deficiencies in the prior art, the invention provides a kind of chemical vapor deposition unit and solve the problems referred to above.
The object of the present invention is to provide a kind of chemical vapor deposition unit, the duration of service of the filter screen of this deposition apparatus longer and also can filtering littler particulate in the waste gas.
Chemical vapor deposition unit of the present invention includes a boiler tube, an air extractor and a filter screen.Chip is placed in the boiler tube, and carries out chemical vapour deposition reaction on chip, produces waste gas and particulate simultaneously.Air extractor is connected in boiler tube, is used for extracting waste gas and particulate out boiler tube.Filter screen is set between boiler tube and the air extractor, is used to tackle particulate, and this filter screen is to stretch in the three-dimensional space.
Because filter screen of the present invention has tridimensional shape, so total surface area plane formula filter screen commonly used is bigger, can tackle the particulate in more waste gas, filter screen can use the longer time and needn't clear up.On the other hand because the total area of filter screen increases, even therefore mesh do littler, also can keep the circulation of waste gas.And that mesh is done is littler, represents and can tackle littler particulate, makes filter effect better.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. elaborates.
The accompanying drawing simple declaration
Fig. 1 is a boiler tube formula LPCVD equipment commonly used;
Fig. 2 is the particulate resistance sinking device of boiler tube formula LPCVD equipment commonly used;
Fig. 3 is the filter screen of boiler tube formula LPCVD equipment commonly used;
Fig. 4 is boiler tube formula LPCVD equipment one example of the present invention;
Fig. 5 is the filter screen of boiler tube formula LPCVD equipment of the present invention;
Fig. 6 is another example of boiler tube formula LPCVD equipment of the present invention.The figure number explanation:
10 ~ boiler tube, 20 ~ particulate resistance sinking device
22 ~ blade, 30 ~ vacuum pump
40 ~ filter screen, 45 ~ main valve
50 ~ boiler tube, 60 ~ particulate resistance sinking device
70 ~ vacuum pump, 80 ~ filter screen
84 ~ bottom, 82 ~ side
86 ~ flange, 90 ~ main valve
Following conjunction with figs. illustrates preferred embodiment of the present invention.
See also Fig. 4, Figure 4 shows that boiler tube formula LPCVD equipment of the present invention.Boiler tube 50 is constituted with the quartz (Quartz) after annealing (Annealed), by external heated device (not icon) boiler tube 50 is heated.Reactant gases is sent in the boiler tube 50 from fire door.The chip that is deposited places equally with on the made brilliant boat (Boat) of quartz, and along with brilliant boat is put into the appropriate location of boiler tube, so that deposit.The remaining waste gas of deposition reaction then utilizes vacuum pump 70 to discharge.In addition, a main valve 90 is set in exhaust line, is used to control the open and close of exhaust line.
When carrying out chemical vapour deposition reaction, have many in the boiler tube 50 by by product and the unreacted particulate that reactant gases produced completely, for avoiding these particulates to cause obstruction along with waste gas enters in the pump 30, therefore one particulate resistance sinking device (ParticleTrap) 60 is set in exhaust line, in particulate resistance sinking device 60, multilayer blade (MultilayeredLeaflet) is installed, in order to the particulate in the absorption waste gas.Simultaneously, in exhaust line, one filter screen 80 more is set, with the particulate in the further filtering waste gas near vacuum pump 70 places.
See also Fig. 5, Fig. 5 is the stereographic map of filter screen of the present invention.Filter screen 80 of the present invention stretches in the three-dimensional space, in this preferred embodiment, and filter screen 80 likeness in form caps, and have a side 82 cylindraceous, and an end of 82 links a bottom 84 in the side, and the periphery of the other end then extends a flange (Flange) 86.
In use, the bottom 84 of filter screen 80 of the present invention and the area of flange 86 be rough to equal the area of filter screen commonly used, but the present invention more the area of filter cloth side 82, therefore can tackle the particulate in more waste gas, filter screen can use just to be needed to clear up for more time.The field test result, for being for the principal reaction gas with tetraethoxy silicomethane (TEOS), the cleaning filter screen time extended to three months by one month.For the settled layer that reacts was borosilicate glass (BSG), the cleaning filter screen time extended to two months by one month.And for settled layer was arsenic silex glass (AsSG), the cleaning filter screen time extended to about six months by two months.Hence one can see that, and the present invention has prolonged the duration of service of filter screen, also reduced staff's burden simultaneously.
On the other hand because the total area of filter screen increases, even therefore mesh do littler, can not reduce the exhaust flow flux yet.And that mesh is done is littler, represents and can tackle littler particulate, makes filter effect better.
It should be noted that filter screen of the present invention is not limited to hat-shaped,, all can increase surface-area, tackle the particulate in more waste gas, make filter screen longer duration of service as long as make three-dimensional shape.Filter screen 80 of the present invention also can be installed on the ingress (as shown in Figure 6) of close main valve 90 in the exhaust line, blocks main valve 90 to prevent particulate.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; anyly have the knack of this skill person; without departing from the spirit and scope of the present invention; still can do a little change and retouching, so protection scope of the present invention is when looking the accompanying Claim book and being as the criterion in conjunction with the scope person of defining of specification sheets and accompanying drawing.
Claims (10)
1. improved boiler tube formula LPCVD device comprises:
Boiler tube, interior placement chip, and on this chip, carry out chemical vapour deposition reaction, produce waste gas and particulate simultaneously;
Air extractor connects this boiler tube, extracts this waste gas and particulate out this boiler tube;
Filter screen is arranged between this boiler tube and this air extractor, is used to tackle this particulate, it is characterized in that this filter screen stretches in the three-dimensional space.
2. boiler tube formula LPCVD device as claimed in claim 1 is characterized in that this air extractor is a vacuum pump.
3. boiler tube formula LPCVD device as claimed in claim 1 is characterized in that more comprising particulate resistance sinking device, is arranged between this boiler tube and this filter screen, is used to tackle this particulate.
4. boiler tube formula LPCVD device as claimed in claim 3 is characterized in that, this particulate resistance sinking device has at least one blade, is used to adsorb this particulate.
5. boiler tube formula LPCVD device as claimed in claim 1 is characterized in that, this filter screen is arranged near this air extractor inlet.
6. boiler tube formula LPCVD device as claimed in claim 1 is characterized in that more comprising a valve, is arranged between this boiler tube and this air extractor, is used to control this waste gas and particulate and flows out this boiler tube.
7. boiler tube formula LPCVD device as claimed in claim 6 is characterized in that this filter screen is arranged near the inlet of this valve.
8. boiler tube formula LPCVD device as claimed in claim 1 is characterized in that this filter screen shape approximation is in the cap of tool shade.
9. the described boiler tube formula of claim 1 LPCVD device is characterized in that the described filter screen of semi-conductor manufacturing that is applicable to comprises:
One side surrounds into cylindric;
One bottom is attached at this lateral end.
10. boiler tube formula LPCVD device as claimed in claim 9 is characterized in that described filter screen also comprises a flange, is attached at the periphery of this lateral the other end.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB01110452XA CN1136334C (en) | 2001-04-10 | 2001-04-10 | Improved chemical gas phase deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB01110452XA CN1136334C (en) | 2001-04-10 | 2001-04-10 | Improved chemical gas phase deposition equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1380442A CN1380442A (en) | 2002-11-20 |
| CN1136334C true CN1136334C (en) | 2004-01-28 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB01110452XA Expired - Fee Related CN1136334C (en) | 2001-04-10 | 2001-04-10 | Improved chemical gas phase deposition equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1136334C (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100351426C (en) * | 2003-12-13 | 2007-11-28 | 鸿富锦精密工业（深圳）有限公司 | Chemical vapor deposition equipment |
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2001
- 2001-04-10 CN CNB01110452XA patent/CN1136334C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1380442A (en) | 2002-11-20 |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20040128 |