CN1136323C - High-vacuum electronic beam purifying system for producing semiconductor level material - Google Patents

High-vacuum electronic beam purifying system for producing semiconductor level material Download PDF

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Publication number
CN1136323C
CN1136323C CNB011146532A CN01114653A CN1136323C CN 1136323 C CN1136323 C CN 1136323C CN B011146532 A CNB011146532 A CN B011146532A CN 01114653 A CN01114653 A CN 01114653A CN 1136323 C CN1136323 C CN 1136323C
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purification
temperature
control
raw material
vacuum
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CN1336325A (en
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李明远
陈迎春
陈锦来
李欣洋
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CHANGZHI HI-TECH INDUSTRIAL INVESTMENT CO., LTD.
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李明远
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Abstract

The present invention relates to a high-vacuum electron beam purification system for producing semiconductor raw material in purity grade, which is characterized in that a purification furnace is arranged in a super-high vacuum chamber, high precision computer control system is used for controlling an electron gun to emit electron beam streams with high power and density so as to indirectly heat the material to be purified in the purification furnace, and thus, the metal or nonmetal impurities can reach the evaporation temperature, and then can be vaporized so as to obtain the semiconductor raw material in purity grade.

Description

Produce the condition of high vacuum degree electro beam purification system of semi-conductor purity level raw material
The present invention relates to the purification techniques of vacuum technique, semi-conductor purity level raw material.
Crystal growth attracts much attention already to the requirement of material purity, and semi-conductor and relevant high purity material thereof adopt the purity sign of " semi-conductor is pure " very early.Also propose to make with the RAP reaction high purity aluminium sesquioxide raw material of foreign matter content PP in development high power laser window and sapphire crystal, this shows that " impurity effect " in the crystal comes into one's own.The analysis revealed of sapphire crystal, the source of impurity is except the doping agent that interpolation is arranged in the crystal growth, mainly be impurities and by some impurity that chemical reaction produced of it and gas, container in the raw material, the impurity of the impurity that should control: Pb, Sn, Fe, Cu, Mn, Cr, Co, Ni, Ag, Ti, V, Bi, Ca, Zn, Cd, Mg, O, particularly O (oxygen) is bigger to the crystal growth influence.Therefore, the purity of raw material is the key of the high purifying of crystal, and the impurity that can directly influence the required physicochemical property of crystal must strict control.
Existing purification aluminium sesquioxide method is high-purity tschermigite pyrolysis method, is the synthetic tschermigite of raw material with low iron Tai-Ace S 150, ammonium sulfate, then the tschermigite pyrolysis is got high purity aluminium oxide.But the purity that material is purified could not reach semiconductor grade!
The objective of the invention is for realizing that semiconductor grade purification created the ultra-high vacuum environment of a high-quality cleaning, and under ultra-high vacuum environment, by high precision computation machine Controlling System control electron beam gun emission high power density electronic beam current quilt purification material is carried out indirect heating and purify, make by the purification material purity to reach semiconductor grade.
Realize the technical scheme of above-mentioned purpose: a kind of condition of high vacuum degree electro beam purification system of producing semi-conductor purity level raw material, it is characterized in that: at the indoor purification furnace that is provided with of ultrahigh vacuum(HHV),, evaporate after making its metal or nonmetallic impurity reach its vaporization temperature being carried out indirect heating by the purification material in the purification furnace by electron beam gun emission high power density electronic beam current.
Produce the condition of high vacuum degree electro beam purification system of semi-conductor purity level raw material:
(1) vacuum system comprises direct connection sliding vane rotary vacuum pump and titanium getter pump;
(2) purification system is set, purification system comprises by electron beam gun emission high power density electronic beam current quilt purification material is carried out electron beam purifying plant that indirect heating purifies, is used for the purification internal vacuum chamber is carried out ion cleaning avoid purifying the ion bombardment device that vacuum chamber stain by the raw material secondary of being purified, the proofing unit that is used to collect the impurity collector of the impurity that is gone out by the purification raw materials evaporate and is used for detected temperatures, foreign matter content.
(3) the computer temperature Controlling System that purification system is controlled is set, the computer temperature Controlling System comprises temperature regulator, forward path temperature control topworks and feedback channel remote signal collection transport sector.
Cooling system is set, is used for the casing and the electrode of titanium getter pump, direct connection Spiralism type mechanical pump, cooling pit, purification vacuum chamber are cooled off.
The electron beam purifying plant is made up of electron beam gun, magnetic deflection field device and crucible, places in the purification vacuum chamber.
The ion bombardment device is made up of an ion bombardment power supply and a bar-shaped cathode high voltage electrode.
The pick up camera that is used to observe purification process is set outside the viewing window of purification vacuum chamber.
Temperature regulator is that control computer is passed through the temperature signal that the asynchronous communication interface timesharing receives purification furnace in the purification vacuum chamber, and every road temperature signal all passes through pid control algorithm, generates needed steering order;
Forward path temperature control topworks comprises:
A, V/F conversion multiple metering device, being used for walking abreast through the steering order that pid control algorithm generates generates the channelized frequencies instruction pulse signal V/F conversion corresponding with steering order,
B, isolated variable circuit carry out signal filtering with above-mentioned frequency conversion instruction pulse signal through the output of multiple metering device by the isolated variable circuit, change voltage signal into through integration then,
C, current control circuit and power output circuit, the command voltage signal behind isolated variable is used to regulate the conducting state that crystalline substance is explained pipe, and the AC power that flows through the heating electron gun filament is carried out current control;
(3) feedback channel remote signal collection transport sector comprises:
A, temperature sensor are used to measure the temperature signal of purification furnace,
B, long-range multi-channel data acquisition module realize multi-channel data acquisition,
C, isolation signals transmodulator realize that temperature collect module is connected with the asynchronous communication of control computer.
The data record format of temperature regulator:
(1) be fundamental unit input data with the control step, record entry comprises step preface, target temperature, reaches the target temperature preset time at interval;
Adopt complete linear interpolation by the time sampling signal when (2) carrying out;
(3) control of each furnace temperature is independently carried out along separate routes;
When (4) computer restarted operation after shutdown, the breakpoint data when reading each purification furnace shutdown were automatically recovered control;
(5) latch the current control instruction signal by hardware circuit between the computer down period, it is constant to keep the purification furnace temperature;
(6) the control beat is by the timer management that is provided with, with the enforcement of the format management temperature control law of timer software interruption service.
The pid algorithm of temperature regulator adopts the Discrete PI D-algorithm of incremental form, and rudimentary algorithm is:
ΔU(k)＝K P[E(k)-E(k-1)]+K 1E(k)+K D(E(k)-2E(k-1)+E(k-2))/T
Wherein: Δ U (k) is the adjustment increment of control command, K PBe proportional gain, K 1Be storage gain, K DBe the differential gain, T is a sampling interval, and E (k), E (k-1), E (k-2) are respectively current, preceding 1 time and preceding 2 times temperature controlled deviation.
Each road power amplification circuit is provided with current feedback between power output and current control, the voltage command signal of self-sustaining input, and independently carry out current PI control, it is stable to keep current signal.
Adopt technique scheme, its outstanding technical progress is: 1, the present invention has created the ultra-high vacuum environment of a high-quality cleaning for realizing semiconductor grade purification: by selecting the pumped vacuum systems that is made of direct connection sliding vane rotary vacuum pump and F type turbomolecular pump for use, the purification vacuum chamber is vacuumized, make the vacuum tightness of purification vacuum chamber reach 5 * 10 -8The ultra-high vacuum state of pa.This ultravacuum state, not only can avoid by diffusion pump oil under hot environment decomposition caused that quilt purification material secondary is polluted, guarantee simultaneously under hot environment, not produced oxidation by the purification material.2, the present invention creatively makes by the purification material by electron beam under high vacuum state and dissolves under environment of system, after the metal in the quilt purification material and nonmetallic impurity reach its vaporization temperature, evaporate, thereby realize being reached semiconductor grade purpose by the purification material purity.3, the condition of high vacuum degree electro beam purification system of production semi-conductor purity level raw material is applicable to metal and the raw-material purification of non-metal solid.4, by electron beam gun emission high power density electronic beam current quilt purification material is carried out indirect heating and purifies, can avoid like this direct heating source under hot environment in heating source self material impurity decomposition caused that quilt purification material secondary is polluted.5, control software is based upon under the Windows environment, form by Genie 2.O figure control component platform and two parts of the data management control module of utilizing VB 3.0 exploitations, by photoelectricity, air-sensitive, transmitter such as pressure-sensitive by computer control system to the material purification process sample, analyze, add up, calculate, control and record, realize the control of high precision computation machine temperature.
Below by embodiment also in conjunction with the accompanying drawings, the present invention is further detailed explanation:
Fig. 1 is a kind of structural representation of purification system of the present invention.
Fig. 2 is the water cooling system structure iron.
Fig. 3 is the electric cabinet block diagram of control.
Fig. 4 is the computer control system block diagram of purification system.
Drawing explanation: the anistree measuring seat 32 low vacuum system pipelines of the empty valve of 1 underclad portion cabinet, 13 magnetic deflection field devices, 25 high vacuum valves, 2 baking power supplys, 14 crucible water-cooleds, 26 cooling pits, 3 Ions Bombardment high voltage sourcies, 15 Ions Bombardment devices, 27 titanium getter pumps, 4 isolate steel plate, 16 apparatus for baking 28 5 purification vacuum chamber casings, 17 temperature sensor 29 low vacuum system pipelines, 6 purification door for vacuum chamber 18 impurity collectors, 30 low vacuum valve charge valve 7 purification vacuum chambers, 19 foreign gas sensor 31 direct connection Spiralism type mechanical pumps, 8 hinges 20 9 cam pressing mechanisms 21 vacuum test bases, 33 low vacuum valve, 10 observation windows, 22 flanges, 34 supports, 11 electro beam purification systems, 23 vacuum system pipelines, 12 electron guns, 24 vacuum chamber charge valves
Embodiment: a kind of condition of high vacuum degree electro beam purification system that is used to produce semi-conductor purity level raw material, become with the electric group of control by mainframe, mainframe is provided with vacuum system, purification system, pick up camera and cooling system, controls electric cabinet various instrument and computer control system are set.Wherein:
Vacuum system mainly is made up of cabinet, direct connection Spiralism type mechanical pump 31 and titanium getter pump 26.
As shown in Figure 1, cabinet divides levels, and top section is provided with purification vacuum chamber casing 5, and lower floor's cabinet 1 built-in baking power supply 2 and ion bombardment power supply 3 is provided with isolate steel plate 4 between the levels.Purification vacuum chamber casing 5 is fixed on the thick isolate steel plate 4 of the 20mm of portion that combines between the higher and lower levels, and makes the cabinet top and the bottom be integrated into firm integral body.
Purification vacuum chamber 7 relies on sealing of " O " type vacuum rubber circle and purification door for vacuum chamber 6 to form by purification vacuum chamber casing 5, both connect with hinge 8, sealing load mainly relies on the barometric point that acts on above the shop front, and precompression produces by 9 effects of the cam pressing mechanism above the door and hinge 8 springs.The hole that a plurality of Ф 33.5m are arranged on the casing chassis can be used for the light path hole of optic test, sensor connector or introduce other joint or seal with flange.The viewing window 10 that a diameter is arranged on the shop front is 125mm, by naked eyes or Kamera, the observed and recorded purification process.
Connect to form vacuum system successively by purification vacuum chamber 7, flange 22, vacuum system pipeline 23, purification vacuum chamber inflation valve 24, high vacuum valve 25, cooling pit 26, titanium getter pump 27, preliminary vacuum valve 28, rough vacuum system pipeline 29, low vacuum valve inflation valve 30, direct connection Spiralism type mechanical pump 31, rough vacuum system pipeline 32, vacuum system pipeline 23.
Install and fix purification vacuum chamber inflation valve 24 in vacuum system pipeline 23 upper ends, rough valve 33 is installed in vacuum system pipeline 23 lower ends, by purification vacuum chamber inflation valve 24, under the situation of closing high vacuum valve 25 and low vacuum valve 33, purification vacuum chamber 7 and vacuum system pipeline 23 are inflated.
Low vacuum valve 33 adopts the pneumavalve of diameter Ф 63mm, be fixedly mounted on vacuum system pipeline 24 lower ends and be mutually permanently connected, and connect direct connection blade mechanical pumps 31, be mutually permanently connected by rough vacuum system pipeline 29 and preliminary vacuum valve 28 by rough vacuum system pipeline 32 with rough vacuum system pipeline 32.The effect of low vacuum valve 33 is when series rotary sheet type mechanical pump 31 work and titanium getter pump 27 when closing, and when opening low vacuum valve 33 and closing preliminary vacuum valve 28 and high vacuum valve 25, can realize vacuum system pipeline 23 and purification vacuum chamber 7 are taken out rough vacuum; Work simultaneously when using when direct connection blade mechanical pump 31 and titanium getter pump 27, need close rough valve 33 and realize vacuum system pipeline 23 and purification vacuum chamber 7 pumping high vacuums.
High vacuum valve 25 is main valves of vacuum system, and diameter is Ф 400mm, and an end connects vacuum system pipeline 23, and the other end is fixedlyed connected with cooling pit 26.The effect of high vacuum valve 25 is when opening high vacuum valve 25 and preliminary vacuum valve 28 and closing rough valve 33, works simultaneously when direct connection blade mechanical pump 31 and titanium getter pump 27 and realizes vacuum system pipeline 23 and purification vacuum chamber 7 pumping high vacuums when using.
Cooling pit 28 1 ends are connected and fixed and are installed on high vacuum valve 25, one ends and are connected and fixed and are installed in titanium getter pump 27 1 ends, and the effect of cooling pit 28 is to prevent that by water cooling auxilliary collection mechanical pump from returning the device of oil.
Titanium getter pump 27 1 ends are connected and fixed and are installed on the cooling pit 28, and the other end is connected and installed preliminary vacuum valve 28, fixedly connected with series rotary sheet type mechanical pump 31 by rough vacuum system pipeline 29.The effect of titanium getter pump 27 is to work simultaneously when using at series rotary sheet type mechanical pump 31 and titanium ion 27, when close rough valve 33 and open preliminary vacuum valve 27 and the situation of high vacuum valve 25 under, realize purification vacuum chamber 7 pumping high vacuums by vacuum system pipeline 23.The effect of preliminary vacuum valve 28 is under the situation of closing low vacuum valve 33, is responsible for 31 pairs of rough vacuum system pipelines 29 of series rotary sheet type mechanical pump, to the connection or the closing function of titanium getter pump 27.
Low vacuum valve inflation valve 30 is connected and fixed on the position between rough vacuum system pipeline 29 and preliminary vacuum valve 28 and the series rotary sheet type mechanical pump 31 fixing.Its effect is when series rotary sheet type mechanical pump 31 starts, and this valve is opened (adopting common diameter is the pneumavalve of Ф 63mm) automatically.When pump quits work, close automatically simultaneously, meanwhile amplify gas, prevent that pump from returning oil from trend series rotary sheet type mechanical pump.
Cam pressing mechanism 9 is installed on the purification door for vacuum chamber 6.When door was closed, turning handle compressed door.When the purification vacuum chamber was bled, because atmospheric pressure further compresses door, cam just unclamped the automatic resilience of handle automatically.
Vacuum system is by direct connection Spiralism type mechanical pump 31, titanium getter pump 26, realize purification vacuum chamber 7 is vacuumized and inflation work by high vacuum valve 25, rough valve 30, preliminary vacuum valve 28 and 24 controls of purification vacuum chamber inflation valve.
Purification system comprises electron beam purifying plant, ion bombardment device, impurity collector, apparatus for baking, proofing unit.
Electron beam purifying plant 11 is made up of electron beam gun 12, magnetic deflection field device 13 and cold-crucible 14 3 parts, electro beam purification system 11 is fixed on the chassis isolate steel plate 4 of purification vacuum chamber 7, during electron beam gun 12 work, by AC power heating electron gun filament, make the filament emission electronics, heat generating is under the high-voltage electric field effect, and thermal electron compiles bunchy, passes anode hole with the speed of average 6 * 106m/s.After thermal electron passed anode hole, electron beam was subjected to electricity, magnetic field comprehensive action, and crucible 14 is injected at 270 ° of angles of deflection.The electron beam of incident crucible 14 impact in the crucible 14 by the purification raw material time, the speed of 6 * 106m/s is blocked, the kinetic energy of several kiloelectron volts becomes heat energy rapidly, makes by the temperature of purification raw material hurriedly to raise, and makes its impurity evaporation go to reach the purification purpose later on to reach the impurity evaporation temperature.
Ion bombardment device (cathode high voltage electrode) is made up of an ion bombardment power supply 3 and a bar-shaped cathode high voltage electrode 15, bar-shaped cathode high voltage electrode 15 is fixed on the chassis isolate steel plate 4 of purification vacuum chamber casing 5, and by the ion bombardment high-voltage power supply 3 in the joint connection main frame bottom cabinet 1, be used for that ion cleaning avoid purifying 7 pairs of vacuum chambers are carried out in purification vacuum chamber 7 inside and stain bombardment adjustable power (self controllable) by purification raw material secondary.
Impurity collector 18 is positioned at 150mm place, electron beam gun crucible 14 top, be fixed in by union lever on the chassis isolate steel plate 4 of purification vacuum chamber casing 5, be used for collecting the impurity that is gone out by the purification raw materials evaporate specially, reduce the contamination of its impurity to purification vacuum chamber each position, the chassis connector by purification vacuum chamber casing 5 is connected with the outside.
Apparatus for baking 16 is fixed on purification vacuum chamber 7 interior chassis, the electro beam purification system 11 both sides isolate steel plate 4, adopts the tungsten-iodine lamp heating, and the highest storing temperature can reach 300 ℃.Apparatus for baking 16 connects the baking power supply 2 of main frame bottom by power cord connector.
Proofing unit comprises temperature sensor 17, foreign gas transmitter 19, vacuum test base 21 and anistree measuring seat 20:
Temperature sensor 17 is used for measuring the temperature of purification vacuum chamber 7, and is fixed in purification vacuum chamber casing chassis isolate steel plate 4, is connected with outside by joint.
Foreign gas transmitter 19 is positioned on the purification vacuum chamber 7 casing tops, and is connected with outside by connector on the isolate steel plate 4 of purification vacuum chamber casing chassis.
Anistree measuring seat 20 is fixed on the purification vacuum chamber casing chassis isolate steel plate 4, and it is connected with outside by connector, is used for other testing wires of standby connection.
Vacuum test base 21 has two, is fixed in above purification vacuum chamber 7 rear portion bleeding points one side, one thermocouples tube is installed and is used for measuring rough vacuum; Another is installed ionization tube and is used for measuring high vacuum, is connected with control electricity cabinet vacuum test instrument with testing wire by connector.
Pick up camera (drawing among Fig. 1) is fixed on viewing window 10 outer walls in purification vacuum chamber 7 fronts, is connected with the electric cabinet indicating meter of control by data line, is used for observing, writes down, controls the purification production process.
Water cooling system: as shown in Figure 2, the present invention can carry out water cooling to titanium getter pump 27, direct connection Spiralism type mechanical pump 31, cooling pit 26, casing (1,5) and electrode 15 etc.
Control electric cabinet part: the power supply of controlling electric cabinet part is that the AC power of 220/380V50HZ is formed, it is the central combination body of all monitoring instrument of purification system, its task is the various piece of vacuum system and purification system to be passed through the collection of information such as photoelectricity, pressure, air-sensitive, finished the supervision of mainframe system various piece, the purpose of control by the judgement that the manual mode computery is analyzed, adds up, write down, it is made up of following 11 parts.This 11 part instrument is concentrated and is fixedly mounted on the different sites that Fig. 3 marks the electric cabinet of control.
The container body that to control electric cabinet-type air conditioner case be the central combination of all monitoring instrument of the present invention cooperates simultaneously with mainframe and to use.
The data transmission instrument: be used for receiving by transmitter (17,19) and come Information Monitoring by the data of data line transmission, the information after judging by each tester is concentrated by it and is transferred to robot calculator and the message command that robot calculator returns is transferred to the instrument that various piece executes instruction.The data transmission instrument must select to start when manual or automatic its power supply at robot calculator.The data transmission instrument is fixed in the control switch cabinet.
Vacuum measuring gauge: by the ionization tube of data line and measuring apparatus vacuum measurement transmitter 20 and the instrument that thermocouples tube is measured the vacuum system vacuum values respectively, can be independently and computer system be used.
The host computer control instrument: the display instrument that execution is controlled manually to the mainframe system except that computery and electron beam source Controlling System, it and the electric cabinet Other Instruments of control: vacuum test instrument, indicating meter, electron beam source controller, titanium getter pump power supply are used.
Indicating meter: comprise professional indicating meter that shows the objective demonstration of robot calculator operation information and the display instrument that is used for receiving, observing two telephotography images on the purification vacuum chamber viewing window 10.
The electron beam source controller is the controller that is used for operating main control system cabinet electron beam source, power supply and control electron beam gun 12, is an independent controller that uses.
Titanium is from pumping source: the equipment that direct supply is provided for host computer system titanium getter pump 27 specially.
Residual gas analyzer: specially for gathering the information of vaporised gas and become fractional value by residual gas transmitter 19 in the production process of purification raw material by its analysing impurity, be transferred to the analytical instrument that robot calculator is judged again, can independently or with robot calculator be used.
Computer control system: as shown in Figure 4, by temperature regulator, forward path temperature control execution unit and feedback channel remote signal are gathered transmission part and are formed.Forward path comprises: multiple metering device, isolated variable circuit, current control circuit and power output circuit; Feedback channel comprises: thermopair, remote multi-path data acquisition module and signal are isolated the transmission modular converter.
The temperature signal collection module is finished by long-range multi-channel data acquisition module, select intelligent remote data acquisition modules A DAM4018 for use, the algorithm that is provided with the high-order glide filter and rejects very big off-line data value in acquisition module is used to improve the immunity from interference of data gathering.Intelligent remote data acquisition modules A DAM4018 will directly be converted to digital quantity by the purification furnace analog quantity temperature signal that temperature sensor 17 is measured.This module can realize the conversion of 8 tunnel simulating signals, and the resolving accuracy of its AD conversion is 16, for 0～2500 ℃ range of temperature, its temperature resolution can reach ± and 0.046 ℃.This intelligent object works alone under the management of innernal CPU and watchdog routine, finishes the task of remote data acquisition output automatically, and RS422/485 asynchronous communication standard is adopted in its output, and can articulate a plurality of modules as required and expand.
The temperature signal collection module connects the long line asynchronous communication of RS485 module, can realize the telecommunication in the 1000m scope, and finishes by RS485 and isolate transition function to the signal of RS232, realizes that the temperature signal collection module is connected with the asynchronous communication of control computer.Traffic rate can be provided with, the system communication baud rate that native system is set is 9600 (position/s).Be used in combination remote signal collection and transfer function that above two modules have realized feedback channel very easily.
Temperature regulator: the temperature controlled function is finished with the form of control software algorithm in the control computer system, thereby has very big handiness.Computer receives the temperature signal of each purification furnace by the asynchronous communication interface timesharing, and every road temperature signal all passes through pid control algorithm, generates needed steering order, and input is inserted in the V/F conversion multiple metering device on the PC bus.
Pid control algorithm: for satisfying purification furnace temperature control desired control precision and controlled variable adjustment, adopt the form of user program to finish control algolithm, specifically adopt the Discrete PI D-algorithm of incremental form, rudimentary algorithm is:
ΔU(k)＝K P[E(k)-E(k-1)]+K 1E(k)+K D(E(k)-2E(k-1)+E(k-2))/T
Wherein: Δ U (k) is the adjustment increment of control command, K PBe proportional gain, K 1Be storage gain, K DBe the differential gain, T is a sampling interval, and E (k), E (k-1), E (k-2) are respectively current, preceding 1 time and preceding 2 times temperature controlled deviation.Easy to adjust for system, utilize figure control software platform designing gain to adjust element, can be in operational process direct Adjustment System controlled variable.
The data record format of temperature regulator is fundamental unit input data (also otherwise designed is improved as requested) with the control step, record entry comprises step preface, target temperature, reaches the target temperature preset time at interval, database does not have quantity limitation for the control step number, adopt complete linear interpolation by the time sampling signal during execution, each step is regardless of the temperature step in carrying out, can change current execution step preface in operation, revise the temperature objectives and the execution time interval in each step.The control of each furnace temperature is independently carried out along separate routes, and when computer restarted operation after shutdown, the breakpoint data when reading each purification furnace shutdown were automatically recovered control.Latch the current control instruction signal by hardware circuit between the computer down period, it is constant to keep furnace temperature.
V/F conversion multiple metering device adopts V/F conversion PCL830 multiple metering device card and driver, will be through the parallel channelized frequencies pulse signal (V/F conversion) corresponding that generate of the steering order that pid control algorithm generates with steering order, the instruction pulse signal exports the isolation change-over circuit of forward path to by shielding wire.Adopt the mode output temperature control signal of V/F conversion, improved the immunity from interference of instruction signal transmission.The temperature control sampling period can be set under the industrial control software platform.
Isolated variable: through the temperature control command of the variable-frequency pulse sequence form of counter output, at first carry out signal filtering, change voltage signal into through integration then by the isolated variable circuit.
Current control and power output: the command voltage signal behind isolated variable is used to regulate the conducting state that crystalline substance is explained pipe, and the AC power that flows through heating electron beam gun 12 filaments is carried out current control, thus heat generating of control filament emission.Each road power amplification circuit is provided with current feedback between power output and current control, voltage command signal that can the self-sustaining input, and independently carry out current PI control, keep current signal and stablize.This measure guarantees under the constant situation of envrionment temperature situation, as long as computer does not change input order, just can keeping for a long time flows through adds the current constant of thermionic electron guns 12 filaments, it is constant substantially to make heat send out electron beam, the vaporization temperature of keeping purification furnace is constant, so that the impurity evaporation of corresponding vaporization temperature reaches the purpose of purification.But because the impurity difference, corresponding vaporization temperature difference in the process of purifying, should be evaporated purification respectively to different impurities one by one, and final the realization reached semiconductor grade purpose by the purification material purity.
The working process of purification system:
Open purification door for vacuum chamber 6 cleaning purification vacuum chambers 7 when (1) equipment uses, and will be put into cold-crucible 14, and close purification door for vacuum chamber 6 by the purification raw material.
(2) open total water source 1.
(3) open general supply, and startup robot calculator operation execution trace routine is carried out system testing to equipment.
(4) open the cooling water valve of direct connection Spiralism type mechanical pump 31, operation direct connection Spiralism type mechanical pump 31 start buttons, after starting direct connection Spiralism type mechanical pump 31, operation preliminary vacuum valve 28 buttons are opened preliminary vacuum valve 28, and titanium getter pump 27 is bled, simultaneously, open the cooling water valve of titanium getter pump 27, start its power supply system, start titanium getter pump 27.
(5) start the vacuum test instrument, when the system vacuum degree reaches 3 * 10 -2During Pa, operation low vacuum valve 33 buttons are opened 33 pairs of purification vacuum chambers 7 of low vacuum valve and are taken out rough vacuum.
(6) vacuum tightness of test purification vacuum chamber 7 is when reaching 3 * 10 -2During Pa, operation high vacuum valve 25 buttons are opened high vacuum valve 25, to purification vacuum chamber 7 pumping high vacuums.
(7) need before the purification toast purification vacuum chamber 7, open baking power supply 2, storing temperature is controllable.In this process, can open the outer wall cooling water valve of purification vacuum chamber 7, cool off by cold water.
(8) vacuum tightness when test purification vacuum chamber 7 ought reach 3 * 10 -8During Pa, the preparation of can purifying.
(9) open the power switch of electron beam gun 12, start the power supply high voltage power supply of electron beam gun 12.
(10) test purification vacuum chamber 7 is when vacuum tightness ought reach 3 * 10 -8During Pa, electron beam gun 12 filaments are carried out preheating.
(12) start electron beam gun operating system, connect the electron beam gun high-voltage power supply and adjust electronic beam current, the gated sweep system to quilt purification material emission high density electron beam stream, purifies to it, successively four crucibles is repeated this program.
(13) after finishing purification, close electron beam gun power supply high voltage power supply.
(14) after the purification vacuum chamber reaches room temperature, close the vacuum test instrument, operation high vacuum valve button cuts out high vacuum valve, and operation low vacuum valve button cuts out low vacuum valve, closes purification vacuum chamber outer wall cooling water valve.
(15) close the titanium getter pump cooling water valve, close its power supply system, close titanium getter pump.
(16) start purification vacuum chamber button, the purification vacuum chamber is inflated.
(17) open purification door for vacuum chamber cleaning purification vacuum chamber, taken out successively respectively by the purification raw material, cleaning purification vacuum chamber, and close the purification door for vacuum chamber.
(18) operation low vacuum valve button is opened low vacuum valve, and the purification vacuum chamber is taken out rough vacuum, purifies as proceeding, and then repeats said procedure.
(19) if shutdown is then operated the low vacuum valve button and opened low vacuum valve, the purification vacuum chamber is taken out rough vacuum; Afterwards, operation preliminary vacuum valve button cuts out the preliminary vacuum valve, and operation direct connection Spiralism type mechanical pump X button is closed direct connection Spiralism type mechanical pump, closes direct connection Spiralism type mechanical pump cooling water valve.
(20) close robot calculator, trace routine is carried out in operation; Close general supply, close total water source.

Claims (10)

1, produces the condition of high vacuum degree electro beam purification system of semi-conductor purity level raw material, it is characterized in that: at the indoor purification furnace that is provided with of ultrahigh vacuum(HHV), by electron beam gun emission high power density electronic beam current to being carried out indirect heating by the purification material in the purification furnace, make its metal or nonmetallic impurity reach its vaporization temperature after evaporation produce semi-conductor purity level raw material.
2, the condition of high vacuum degree electro beam purification system of production semi-conductor purity level raw material according to claim 1 comprises vacuum system, it is characterized in that:
(1) vacuum system comprises direct connection sliding vane rotary vacuum pump and titanium getter pump;
(2) purification system is set, purification system comprises by electron beam gun emission high power density electronic beam current quilt purification material is carried out electron beam purifying plant that indirect heating purifies, is used for the purification internal vacuum chamber is carried out ion cleaning avoid purifying the ion bombardment device that vacuum chamber stain by the raw material secondary of being purified, the proofing unit that is used to collect the impurity collector of the impurity that is gone out by the purification raw materials evaporate and is used for detected temperatures, foreign matter content;
(3) the computer temperature Controlling System that purification system is controlled is set, the computer temperature Controlling System comprises temperature regulator, forward path temperature control topworks and feedback channel remote signal collection transport sector.
3, according to the condition of high vacuum degree electro beam purification system of the described production semi-conductor of claim 2 purity level raw material, it is characterized in that: cooling system is set, is used for the casing and the electrode of titanium getter pump, direct connection Spiralism type mechanical pump, cooling pit, purification vacuum chamber are cooled off.
4, according to the condition of high vacuum degree electro beam purification system of the described production semi-conductor of claim 2 purity level raw material, it is characterized in that: the electron beam purifying plant is made up of electron beam gun, magnetic deflection field device and crucible, places in the purification vacuum chamber.
5, according to the condition of high vacuum degree electro beam purification system of the described production semi-conductor of claim 2 purity level raw material, it is characterized in that: the ion bombardment device is made up of an ion bombardment power supply and a bar-shaped cathode high voltage electrode.
6, according to the condition of high vacuum degree electro beam purification system of the described production semi-conductor of claim 2 purity level raw material, it is characterized in that: the pick up camera that is used to observe purification process is set outside the viewing window of purification vacuum chamber.
7, according to the condition of high vacuum degree electro beam purification system of the described production semi-conductor of claim 2 purity level raw material, it is characterized in that:
(1) temperature regulator is that control computer is passed through the temperature signal that the asynchronous communication interface timesharing receives purification furnace in the purification vacuum chamber, and every road temperature signal all passes through pid control algorithm, generates needed steering order;
(2) forward path temperature control topworks comprises:
A, V/F conversion multiple metering device, being used for walking abreast through the steering order that pid control algorithm generates generates the channelized frequencies instruction pulse signal V/F conversion corresponding with steering order,
B, isolated variable circuit carry out signal filtering with above-mentioned frequency conversion instruction pulse signal through the output of multiple metering device by the isolated variable circuit, change voltage signal into through integration then,
C, current control circuit and power output circuit, the command voltage signal behind isolated variable is used to regulate the conducting state that crystalline substance is explained pipe, and the AC power that flows through the heating electron gun filament is carried out current control;
The feedback channel remote signal is gathered transport sector and is comprised:
A, temperature sensor are used to measure the temperature signal of purification furnace,
B, long-range multi-channel data acquisition module realize multi-channel data acquisition,
C, isolation signals transmodulator realize that temperature collect module is connected with the asynchronous communication of control computer.
8, according to the condition of high vacuum degree electro beam purification system of the described production semi-conductor of claim 7 purity level raw material, it is characterized in that the data record format of temperature regulator is:
(1) be fundamental unit input data with the control step, record entry comprises step preface, target temperature, reaches the target temperature preset time at interval;
Adopt complete linear interpolation by the time sampling signal when (2) carrying out;
(3) the degree temperature control of each purification furnace is independently carried out along separate routes;
When (4) computer restarted operation after shutdown, the breakpoint data when reading each purification furnace shutdown were automatically recovered control;
(5) latch the current control instruction signal by hardware circuit between the computer down period, it is constant to keep the purification furnace temperature;
(6) the control beat is by the timer management that is provided with, with the enforcement of the format management temperature control law of timer software interruption service.
According to the condition of high vacuum degree electro beam purification system of the described production semi-conductor of claim 7 purity level raw material, it is characterized in that 9, the pid algorithm of temperature regulator adopts the Discrete PI D-algorithm of incremental form, rudimentary algorithm is:
ΔU(k)＝K p[E(k)-E(k-1)]+K 1E(k)+K D(E(k)-2E(k-1)+E(k-2))/T
Wherein: Δ U (k) is the adjustment increment of control command, K PBe proportional gain, K 1Be storage gain, K DBe the differential gain, T is a sampling interval, and E (k), E (k-1), E (k-2) are respectively current, preceding 1 time and preceding 2 times temperature controlled deviation.
10, according to the condition of high vacuum degree electro beam purification system of the described production semi-conductor of claim 7 purity level raw material, it is characterized in that: each road power amplification circuit is provided with current feedback between power output and current control, the voltage command signal of self-sustaining input, and independently carry out current PI control, it is stable to keep current signal.
CNB011146532A 2001-04-26 2001-04-26 High-vacuum electronic beam purifying system for producing semiconductor level material Expired - Fee Related CN1136323C (en)

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Cited By (1)

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US10384299B2 (en) 2013-06-26 2019-08-20 Apple Inc. Electron beam conditioning
CN104016334B (en) * 2014-05-28 2016-01-06 付毅 Graphite purification method

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Publication number Priority date Publication date Assignee Title
US8024149B2 (en) 2006-08-03 2011-09-20 Titanium Metals Corporation Overheat detection system
CN102705066A (en) * 2006-08-03 2012-10-03 钛金属公司 Overheat detection system
CN101495727B (en) * 2006-08-03 2013-03-27 钛金属公司 Overheat detection system
CN102705066B (en) * 2006-08-03 2015-03-25 钛金属公司 Overheat detection system

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