CN113629185A - Synaptic three-terminal device based on electrolyte-controlled strong-correlation oxide - Google Patents
Synaptic three-terminal device based on electrolyte-controlled strong-correlation oxide Download PDFInfo
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- CN113629185A CN113629185A CN202010371838.7A CN202010371838A CN113629185A CN 113629185 A CN113629185 A CN 113629185A CN 202010371838 A CN202010371838 A CN 202010371838A CN 113629185 A CN113629185 A CN 113629185A
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- H10N70/253—Multistable switching devices, e.g. memristors having three or more terminals, e.g. transistor-like devices
Abstract
The invention provides a synaptic three-terminal device based on a solid electrolyte regulated and controlled strong-correlation oxide, which comprises: a first electrode; a solid electrolyte layer disposed below the first electrode, the solid electrolyte layer being composed of a compound or composite material having ion conductivity and being electrically insulating; a channel layer disposed below the solid electrolyte layer, a resistance of the channel layer being variable according to a concentration of ions entering the channel layer; the second electrode and the third electrode are arranged on the side edge of the channel layer, and the second electrode and the third electrode are tightly attached to the channel layer.
Description
Technical Field
The invention relates to a three-terminal synaptic device, the electrical transport characteristics of which can simulate biological nerve synapses.
Background
With social progress and technological development, as a large amount of information needs to be transmitted between a memory and a processing unit, the structural and performance deficiencies of the traditional transistor gradually appear, the development of the computing efficiency reaches the bottleneck and cannot meet the requirements of people, and therefore, the research of novel information processing equipment is more and more urgent. In recent years, it has been found that the biological brain transmits and receives information in contrast to the conventional computerThe method has great advantages in processing, can process and analyze a large amount of information in a short time, and has far lower energy consumption than the traditional computer, which is necessary for improving the efficiency of the computer. Studies have shown that information transmission and processing in the human brain is via a large number of neurons (. apprxeq.10)11) And synapse (≈ 10)15) It is realized that neurons are the basic cell units constituting the brain, synapses are the connection points between these units, and the efficiency and weight of information transfer between neurons are determined by synapses, called synaptic weights. The synaptic weights are not constant, and external stimuli can change the synaptic weights, and the change is kept for a corresponding period of time or even permanently according to the strength, frequency and time of the stimuli, which is the learning and memory process of the brain. The logical processing of the external stimuli by the biological brain is essentially the result of weighted output of the stimuli propagating through synapses in the neural network. Because of the many advantages of the brain in information processing, it is desirable to develop new computer architectures with reference to such structures and principles. The most important thing is to prepare an electronic device with synapse function by analogy with human brain structure, which not only can generate corresponding response according to different external stimuli, but also can keep the response for a certain time.
Disclosure of Invention
The invention provides a three-terminal synaptic device capable of responding to an electric field and maintaining the response for a period of time, the electrical transport properties of which are similar to those of synapses in a human brain. The invention provides a synaptic three-terminal device based on a solid electrolyte regulated and controlled strong-correlation oxide, which comprises:
a first electrode;
a solid electrolyte layer disposed below the first electrode, the solid electrolyte layer being composed of a compound or composite material having ion conductivity and being electrically insulating;
a channel layer disposed below the solid electrolyte layer, a resistance of the channel layer being variable according to a concentration of ions entering the channel layer;
the second electrode and the third electrode are arranged on the side edge of the channel layer, and the second electrode and the third electrode are tightly attached to the channel layer.
Preferably, wherein the compound is a metal salt.
Preferably, wherein the metal salt is a lithium ion solid state electrolyte, which is preferably LiSiOx、Li12Si3P2O20、Li2S–SiS2And Li1+xAlxGe2-x(PO4)3At least one of (1).
Preferably, the complex is a complex formed by one of a hydrogen element compound and a metal salt and a high molecular polymer.
Preferably, the compound is a compound which takes polyvinyl alcohol as a main body and is filled with sulfuric acid or sodium perchlorate.
Preferably, wherein the complex is a complex of sodium perchlorate and polyethylene oxide.
Preferably, wherein the channel layer is made of a strongly correlated oxide material.
Preferably wherein the strongly associated oxide material is at least one of a nickelate, a manganate, a niobium oxide, a nickel oxide and a vanadium dioxide.
Preferably, wherein the nickelate is samarium nickelate and the manganate salt is lanthanum manganate.
Preferably, wherein the thickness of the channel layer is in the range of 1 nm to 500 nm.
Compared with the traditional electronic transistor, the resistance of the synaptic three-terminal device can be changed due to different electric fields applied from the outside, the adjustable range of the resistance is large, the ratio of the maximum resistance value to the minimum resistance value, namely the switching ratio, can reach several orders of magnitude changes, and the specific external electric field can also maintain the change of the resistance value for a certain time. Similar to the behavior of synaptic weight changes, the resistance change of the device of the present invention is continuous and there are a large number of intermediate states between the maximum resistance and the minimum resistance. The characteristics of the invention have important heuristic significance on exploring the paths of brain-like computers.
The synaptic three-terminal device based on the electrolyte-controlled strong-correlation oxide simultaneously comprises functions of a nonvolatile multi-level resistance switch and electric control metal-insulator transition, and is superior to other types of equipment in the aspects of realizing logic functions, dendrite integration and artificial dendritic neurons. The low voltage operating characteristics of three-terminal synaptic devices with electrolytes modulating strongly associated oxides also offer the possibility of implementing ultra-low energy synaptic devices.
Drawings
Embodiments of the invention are further described below with reference to the accompanying drawings, in which:
FIG. 1 is a schematic diagram of a three-terminal synaptic device based on solid electrolyte controlled strong association oxide;
FIG. 2A is a schematic diagram illustrating resistance change of a three-synaptic-terminal device based on a solid electrolyte controlled strong association oxide under an applied forward electric field;
FIG. 2B shows a schematic diagram of resistance change of a three-terminal synaptic device based on solid electrolyte controlled strong association oxide under the application of a negative electric field;
FIG. 3 shows example 1-LiSiOxSchematic representation of three-terminal synaptic devices as solid electrolyte layers and as example 2-a composite of sodium perchlorate and polyethylene oxide as a solid electrolyte layer.
FIG. 4 shows LiSiOxThe test result of the synaptic three-terminal device based on the solid electrolyte regulation strong association oxide is taken as a solid electrolyte layer;
fig. 5 shows a schematic diagram of the test results of solid electrolyte based conditioning of strongly associated oxides with a composite of sodium perchlorate and polyethylene oxide as the solid electrolyte layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be further described in detail by embodiments with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a three-terminal synaptic device based on a solid electrolyte controlled strong association oxide according to the present invention, which includes a first electrode 7, a solid electrolyte layer 3, a channel layer 1, a second electrode 2, a third electrode 4, and a substrate 5 stacked in layers. The channel layer 1 can be grown and prepared on the substrate 5, the channel layer 1 is made of materials which can be regulated and controlled by the solid electrolyte layer and further have resistance changes, the materials comprise strongly-associated oxide materials, the resistance of the channel layer changes due to the change of the structure of the channel layer, ions can be embedded and separated out through the solid electrolyte to change the structure of the channel layer, and therefore controllable resistance value change is achieved. The solid electrolyte layer 3 is generally composed of a compound or composite material having high ion conductivity and low electrical conductivity. As shown in fig. 1, the combination of the circle and the cross in the solid electrolyte layer 3 represents cations, and in a natural state, the cations in the solid electrolyte layer 3 are uniformly distributed, and the cations move in the direction of the electric field lines after an external electric field is applied, and enter or are extracted from the channel layer. The second electrode 2 and the third electrode 4 are made of metal or conductive oxide, are located at the side of the channel layer and are in close contact with the channel layer, and the first electrode 7 is located above the solid electrolyte layer 3.
The principle of the three-terminal synaptic device based on solid electrolyte controlled strong association oxide according to the present invention is described below with reference to fig. 2A and 2B. Referring to fig. 2A and 2B, fig. 2A and 2B are schematic diagrams illustrating resistance change of a three-terminal synaptic device based on a solid electrolyte controlled strong association oxide under an applied electric field according to the present invention. Fig. 2A is a working schematic diagram of the device when the applied electric field 6 is a positive electric field, and at this time, cations in the solid electrolyte layer 3 move downward (arrow direction in the figure) along the electric field direction under the action of the applied positive electric field and enter the channel layer 1, so that the occupation of electron orbits in the strongly-associated oxide of the channel layer is changed, the band gap structure is changed, the band gap is narrowed or even disappeared, the resistance of the device is reduced, and the conductance is increased. It should be noted that the actual resistance state change of the device should be determined by measurement of the properties of the material. Fig. 2B is a schematic diagram of the device operating in the case where the applied electric field 6 is a negative electric field, and cations embedded in the channel layer 1 are separated out from the channel layer along the direction of electric field lines (arrow direction in the figure) under the action of the applied electric field and return to the solid electrolyte layer 3, so that the structure of the strongly associated oxide in the channel layer 1 returns to a high-resistance state. The resistance of the device can be regulated to an intermediate state between the maximum resistance value and the minimum resistance value by regulating and controlling the parameters of the strength, duration, frequency and the like of an external electric field, so that the device can be used for simulating the synaptic function to realize controllable synaptic weight. After an external electric field with specific strength, duration and frequency is applied, when the electric field is removed, the ion distribution in the device does not immediately return to the initial state, but remains for a certain time, and the retention time is related to the parameters of the external electric field. The resistance change of the device can be controlled by an external electric field and kept for a certain time, and the characteristic is consistent with the phenomenon that synapses are changed by external stimulation and kept for a certain time, so the device can be used for simulating the related learning and memorizing process of the synapses.
Example 1
This example 1 is for LiSiOxAnd as the solid electrolyte layer 3, the strongly associated oxide vanadium dioxide is used as a synaptic three-terminal device of the channel layer 1 based on solid electrolyte regulation and control of the strongly associated oxide, and an electric field required by the device is provided by an external power supply. Referring to FIG. 3, FIG. 3 shows an electrolyte LiSiO of the present inventionxA schematic diagram of a synaptic three-terminal device for regulating and controlling vanadium dioxide of a channel layer comprises:
a first electrode 7 having a thickness of 100nm and made of platinum;
LiSiO with thickness of 100nmxA thin film as the solid electrolyte layer 3;
a vanadium dioxide thin film with the thickness of 70nm is used as a strong correlation oxide channel layer 1;
the third electrode 4 and the second electrode 2 are positioned at two ends of the vanadium dioxide film and are made of metal platinum with the thickness of 75nm grown on metal titanium with the thickness of 5 nm;
the substrate 5 is located below the vanadium dioxide film and is a 0.5mm thick (0001) oriented alumina substrate;
and an external power supply 6 connected between the first electrode 7 and the second electrode 2.
The LiSiOxAs solid electrolyte layer, strongly associated oxide vanadium dioxideThe preparation process of the synaptic three-terminal device based on the solid electrolyte controlled strong correlation oxide as the channel layer is as follows:
the method comprises the following steps: selecting aluminum oxide with polished surface, orientation of (0001), thickness of 0.5mm and side length of 5mm as a substrate 5, wherein the polished surface is in contact with the channel layer 1;
step two: vanadium dioxide with the thickness of 70nm is grown on the polished surface of the substrate 5 to serve as a channel layer 1;
step three: growing metal platinum with the thickness of 75nm on metal titanium with the thickness of 5nm on two sides of the channel layer 1 to form a third electrode 4 and a second electrode 2;
step four: growing 100nm thick LiSiO on the channel layer 1xA thin film as the solid electrolyte layer 3;
step five: platinum metal with a thickness of 100nm was grown as the first electrode 7 over the solid electrolyte layer 3.
LiSiOxAnd as a solid electrolyte layer, the synapse three-terminal device which is prepared by taking vanadium dioxide as a channel layer and is based on solid electrolyte to regulate and control the strong correlation oxide is prepared, and the device is prepared by an inorganic method.
To show the LiSiO of the inventionxAs a solid electrolyte layer, vanadium dioxide, which is a strongly associated oxide, is used as a channel layer to regulate the performance of a synaptic three-terminal device of the strongly associated oxide based on the solid electrolyte, a semiconductor performance test system is selected to connect the first electrode 7, the second electrode 2 and the third electrode 4 together with the test system, and the test system is operated to change the electric field parameters between the first electrode 7 and the second electrode 2 to test the influence of an external electric field on the current between the third electrode 4 and the second electrode 2. The test results are schematically shown in fig. 4, where the resistance of the device decreases when a positive electric field is applied, and the conductance between the second electrode 2 and the third electrode 4 increases significantly from the initial state (determined by the intrinsic resistance of the channel layer), and the conductance does not return to the initial state when the applied electric field is removed, but rather stabilizes at a value, and where the device returns to a high resistance state when a negative electric field is applied, and the conductance of the device drops significantly back to the initial state.
Example 2
In example 2, a composite formed by sodium perchlorate and polyethylene oxide is used as a solid electrolyte layer, and vanadium dioxide, a strongly correlated oxide, is used as a channel layer to regulate a synaptic three-terminal device based on the solid electrolyte, and an electric field required by the device is provided by an external power supply. Referring to fig. 3, fig. 3 is a schematic diagram of a synaptic three-terminal device for regulating and controlling vanadium dioxide in a channel layer by a composite formed by an electrolyte sodium perchlorate and polyethylene oxide according to the present invention, including:
a first electrode 7 having a thickness of 70nm and made of platinum;
a polymer thin film of sodium perchlorate and polyethylene oxide having a thickness of 1 μm as the solid electrolyte layer 3;
a vanadium dioxide thin film with the thickness of 50nm is used as a strong correlation oxide channel layer 1;
the third electrode 4 and the second electrode 2 are positioned at two ends of the vanadium dioxide film and are made of metal platinum with the thickness of 70 nm;
the substrate 5 is positioned below the vanadium dioxide thin film and is a Si substrate with the thickness of 0.5mm and the surface of which is provided with 300nm of silicon dioxide;
and an external power supply 6 connected between the first electrode 7 and the second electrode 2.
The preparation process is similar to that in example 1, and the description is not repeated here.
In order to show that the polymer formed by sodium perchlorate and polyethylene oxide is used as a solid electrolyte layer, the strongly correlated oxide vanadium dioxide is used as a channel layer and is used for regulating the performance of a synaptic three-terminal device of the strongly correlated oxide based on the solid electrolyte, a semiconductor performance test system is selected, a first electrode 7, a second electrode 2 and a third electrode 4 are connected together with the test system, and the influence of an external electric field on the magnitude of current between the third electrode 4 and the second electrode 2 is tested by operating the test system to change the electric field parameter between the first electrode 7 and the second electrode 2. The test results are schematically shown in fig. 5, where the resistance of the device decreases when a positive electric field is applied, the conductance between the second electrode 2 and the third electrode 4 increases significantly from the initial state, the conductance does not return to the initial state when the applied electric field is removed, but stabilizes at a value, and the conductance of the device returns to a high-resistance state when a negative electric field is applied, and then decreases significantly back to the initial state.
According to the above embodiments, it can be seen that the resistance of the three-terminal synaptic device of the present invention changes due to the externally applied electric field, and can be maintained after the externally applied electric field is removed, which is consistent with the learning and memorizing process of biological synapses in response to the external stimulus.
In light of the foregoing, the solid electrolyte layer of the present invention is required to have high ion conductivity and low electrical conductivity, and when an electric field is applied to the device of the present invention, ions in the solid electrolyte layer can be embedded in the strongly associated oxide of the channel layer and can be retained for a certain time after the electric field is removed. The material of the solid electrolyte layer can be composed of a compound or composite material that has good ion conductivity and is electrically insulating. Wherein the compound may comprise a metal salt including, but not limited to, a lithium ion solid electrolyte such as LiSiOx、Li12Si3P2O20、Li2S–SiS2Or Li1+xAlxGe2-x(PO4)3Etc.; the compound may include a compound formed by a compound and a high molecular polymer, which includes a compound formed by one of a hydrogen element compound and a metal salt and a high molecular polymer, including but not limited to a compound formed by taking polyvinyl alcohol as a main body and filling sulfuric acid or sodium perchlorate or a compound formed by sodium perchlorate and polyethylene oxide.
It will be understood by those skilled in the art that electrical insulation as referred to herein is understood to be low electrical conductivity, i.e., the electrical insulation is not completely non-conductive, but rather is of relatively low electrical conductivity such that its current flow does not affect the measurement of the electrical properties of the device.
The thickness of the solid electrolyte layer is dependent on the kind of electrolyte and the manner of preparation, and according to an embodiment of the present invention, the thickness of the solid electrolyte layer should preferably have a range of 10 nm to 10 μm, more preferably have a range of 10 nm to 1 μm, and more preferably have a range of 10 nm to 100 nm.
According to the above embodiments of the present invention, the channel layer may be controlled by a solid electrolyte to achieve a controllable resistance value change, and is made of a strongly associated oxide material, including but not limited to various nickelates, such as samarium nickelate; various manganates such as lanthanum manganate; and others such as niobium oxide, nickel oxide, vanadium dioxide, etc. Based on the principle of the present invention that the size is as small as possible, the thickness of the channel layer should have a range of 1 nm to 500 nm, and preferably have a range of 1 nm to 200 nm, and more preferably have a range of 1 nm to 100 nm.
According to the above embodiments of the present invention, the first electrode, the second electrode, and the third electrode should be composed of a metal such as platinum, gold, or titanium, or a conductive oxide.
According to an embodiment of the present invention, the synaptic three terminal device may also be referred to as a synaptic transistor, the first electrode may also be referred to as a gate, and the second and third electrodes may be referred to as a drain and a source, respectively.
According to the above-described embodiments of the present invention, the substrate is required to have a uniform lattice structure and a clean and flat surface so that a channel layer can be grown thereon, which includes, but is not limited to, fused silica glass or a single crystal oxide material, which may include aluminum oxide, titanium oxide, etc.
In the invention, the size and shape of the solid electrolyte layer and the channel layer can be designed according to the actual situation. However, since the present invention requires the regulation of the variation of the channel layer by the variation of the solid electrolyte, the solid electrolyte layer should preferably completely cover the channel layer, and the first electrode should be in contact with the solid electrolyte layer. According to the present invention, a mechanism for applying an electric field between the first electrode and the second electrode is required, the first electrode should be separated from the channel layer, and the second electrode and the third electrode should be in contact with the channel layer. The distance between the first electrode, the second electrode and the third electrode is not small enough to avoid adhesion, and the smaller the size in the testable range, the better.
Although the above specific embodiment is for LiSiOxAnd a composite of sodium perchlorate and polyethylene oxide as solid state electrolysisThe synaptic three-terminal device with the strong-correlation oxide vanadium dioxide as the channel layer and based on the solid electrolyte regulation and control of the strong-correlation oxide is described, and persons skilled in the art can easily understand that the material type, the size and the like of the strong-correlation oxide of the channel layer have optimization space, the material type can be the strong-correlation oxide with a larger switching ratio, and the size is reduced as much as possible under the condition that good resistance change property is ensured.
While the present invention has been described with reference to the preferred embodiments, it is not intended to limit the invention to the embodiments described herein, and various changes and modifications may be made without departing from the scope of the invention.
Claims (10)
1. A three-terminal synaptic device based on solid electrolyte-mediated strongly associated oxide, comprising:
a first electrode;
a solid electrolyte layer disposed below the first electrode, the solid electrolyte layer being composed of a compound or composite material having ion conductivity and being electrically insulating;
a channel layer disposed below the solid electrolyte layer, a resistance of the channel layer being variable according to a concentration of ions entering the channel layer;
the second electrode and the third electrode are arranged on the side edge of the channel layer, and the second electrode and the third electrode are tightly attached to the channel layer.
2. The solid-state electrolyte mediated strongly associated oxide-based synaptic three terminal device of claim 1, wherein the compound is a metal salt.
3. The solid-state electrolyte mediated strongly associated oxide based synaptic three terminal device of claim 2, wherein said metal salt is a lithium ion solid-state electrolyte, preferably LiSiOx、Li12Si3P2O20、Li2S–SiS2And Li1+xAlxGe2-x(PO4)3At leastOne kind of the medicine.
4. The solid-state electrolyte mediated strongly associated oxide-based synaptic three device of claim 1, wherein the complex is a complex of a high molecular polymer and one of a hydrogen element compound and a metal salt.
5. The solid-state electrolyte mediated strongly associated oxide-based synaptic three terminal device of claim 4, wherein said compound is a polyvinyl alcohol-based compound filled with sulfuric acid or sodium perchlorate.
6. The solid-state electrolyte mediated strongly associated oxide-based synaptic three terminal device of claim 4, wherein said complex is a complex of sodium perchlorate and polyethylene oxide.
7. The solid-state electrolyte mediated strongly associated oxide-based synaptic three terminal device of claim 1, wherein said channel layer is made of a strongly associated oxide material.
8. The solid-state electrolyte mediated strongly associated oxide-based synaptic three device of claim 7, wherein the strongly associated oxide material is at least one of nickelate, manganate, niobia, nickel oxide, and vanadium dioxide.
9. The solid-state electrolyte mediated strongly associated oxide-based synaptic three terminal device of claim 8, wherein the nickelate is samarium nickelate and the manganate salt is lanthanum manganate.
10. The solid state electrolyte mediated strongly associated oxide based synaptic three terminal device of claim 1, wherein the thickness of said channel layer ranges from 1 nanometer to 500 nanometers.
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