CN113471359A - Neurosynaptic-like device and method of manufacturing the same - Google Patents
Neurosynaptic-like device and method of manufacturing the same Download PDFInfo
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Abstract
A kind of nerve synapse device and its manufacturing method, the nerve synapse device uses the macromolecule polymer material or biological organic material doped with ion as the functional layer of the nerve synapse device, the macromolecule polymer material or biological organic material is doped with ion, the biology synapse behavior is simulated from the principle of generating synapse behavior, surpassing the behavior level simulation of the traditional nerve synapse device. So that the device performance is closer to the biological synapse performance. In addition, as the functional layer of the device is internally provided with movable ions, the device can generate current response under lower electrical signal stimulation (pulse), the working voltage is reduced, and meanwhile, as the functional layer is made of an insulating material, although the voltage sensitivity is improved after ions are doped, the current generated by the functional layer is not too large, so that the working voltage and the response current of the device are lower, the power consumption of the device is lower, and the applicability is wider.
Description
Technical Field
The invention belongs to the field of nerve components, and particularly relates to a neural synapse-like device and a manufacturing method thereof.
Background
Under the development background of the current big data era, the data generation and propagation speed is exponentially multiplied, the requirement of the change on the data processing capacity of a computer is higher and higher, the development of computer chips based on a CMOS logic gate circuit and a traditional Von Neumann framework is limited to the problems of storage separation, high power consumption and the like, and great challenges are faced when massive information generated in the big data era is processed. Compared with the prior art, the human brain has the advantages of strong parallel processing capability, associative learning, adaptability, high fault tolerance and the like, and can perform tens of trillion times of calculation per second and only consumes energy equivalent to that of one incandescent lamp. In view of the excitation of brain information processing mode and architecture, developing a new computing paradigm of bionic brain computing with high computing power and low power consumption becomes a major breakthrough to overcome the bottleneck of von neumann.
The brain exhibits excellent characteristics and is inseparable from a large and complex neural network, and information is transmitted among a large number of neurons through synaptic connections, which becomes an important basis for human memory and learning. Therefore, the simulation of biological synaptic function is a primary and fundamental requirement for the implementation of brain-like computing systems.
The implementation of biological synapses using conventional CMOS technology typically requires a large number of transistors to construct complex circuits, which has problems of large area, high power consumption, and difficulty in scaling. In contrast, there is much greater flexibility in simulating biological synaptic behavior with a single solid-state electronic device, referred to as a neuromorphic synaptic device. The neuromorphic synapse devices and the bionic brain system gradually become the focus topic in recent years, and a plurality of scientific research units and institutions develop related researches. To date, important synaptic functions have been successfully simulated in various solid-state electronic devices fabricated based on different device structures and materials. Typically a two terminal neurosynaptic device or a three terminal neurosynaptic device.
Although current neurosynaptic-like devices can simulate a part of important biological synaptic functions, such as exciting/inhibiting postsynaptic current, pulse spike time-dependent plasticity, long-range/short-range synaptic plasticity and the like, many scientific and technical challenges still exist, and the application of the neurosynaptic-like devices is limited. Secondly, the working voltage and power consumption of the artificial synapse device which can be realized at present are also high, and the artificial synapse device is difficult to be matched with the action potential voltage of the biological synapse voltage consumption magnitude and the power consumption of the Fabry-Perot magnitude.
Therefore, there is a need to develop a neurosynaptic-like device with better performance, so as to better realize biological synapse simulation, and at the same time, effectively reduce working voltage and power consumption, and improve applicability.
Disclosure of Invention
The invention mainly solves the technical problem of providing a neural synapse-like device capable of better realizing a biological synapse simulation function, so that the neural synapse-like device can effectively reduce the working voltage and the power consumption.
According to a first aspect, there is provided in an embodiment a method of manufacturing a neurosynaptic-like device, comprising:
providing a semiconductor substrate, wherein the semiconductor substrate comprises a substrate of a two-terminal type neurosynaptic device or a substrate of a three-terminal type neurosynaptic device;
forming a first semiconductor device layer on the semiconductor base layer, the first semiconductor device layer capable of simulating a biological post-synaptic membrane;
forming a functional layer on the first semiconductor device layer, wherein the functional layer is made of an insulating material doped with ions, and the insulating material is a high-molecular polymer material or a biological organic material with insulating property;
forming a second semiconductor device layer on the functional layer, the second semiconductor device capable of simulating a biological presynaptic film.
In one embodiment, forming a functional layer on the first semiconductor device layer comprises:
providing a solvent capable of dissolving a polymeric or bio-organic material;
carrying out ion doping treatment on the solvent;
dissolving a high molecular polymer material or a biological organic material in the solvent to form a uniform doped solution;
and coating the doping type solution on the first semiconductor layer to form a functional layer.
In one embodiment, the solvent is subjected to an ion doping process comprising: dissolving a doping salt in the solvent, wherein the doping salt comprises one or more of a sodium salt, a potassium salt, a calcium salt, a lithium salt, a strontium salt, or a magnesium salt.
In one embodiment, the method for dissolving the polymeric material or the bio-organic material in the solvent comprises the following steps: adjusting the ratio between the polymeric or bio-organic material and the salt.
In one embodiment, when the polymeric material is dissolved in the solvent, the polymeric material is polyvinyl alcohol, and the doped salt is sodium acetate;
adjusting the ratio range of the polyvinyl alcohol to the sodium acetate salt to be 25: 1-25: 20.
in one embodiment, after the coating the doping type solution on the first semiconductor layer, the method further includes: and drying the doped solution on the first semiconductor layer.
In one embodiment, after dissolving the polymeric or bio-organic material in the solvent,
further comprising: and heating the solvent, wherein the temperature is not higher than 70 ℃.
In one embodiment, when the semiconductor substrate is a substrate of a two-terminal neurosynaptic device:
the first semiconductor device layer is a metal layer,
in a corresponding manner, the first and second electrodes are,
the forming a first semiconductor device layer on the semiconductor base layer includes: forming a metal on the semiconductor substrate by a deposition or sputtering process as a lower electrode of the semiconductor device in response to the nerve-like signal transmitted from the functional layer;
the second semiconductor device layer is a metal layer,
in a corresponding manner, the first and second electrodes are,
forming a second semiconductor device layer on the functional layer includes: forming a metal on the functional layer as an upper electrode of the semiconductor device by a deposition or sputtering process to respond to an external electrical stimulus and deliver an electrical signal to the functional layer.
In one embodiment, when the semiconductor substrate is a substrate of a three terminal neurosynaptic device:
in a corresponding manner, the first and second electrodes are,
the first semiconductor device layer is a channel layer in a three-terminal transistor device, the second semiconductor device layer is a gate layer in the three-terminal transistor device, and the functional layer corresponds to a gate insulating layer in the three-terminal transistor.
According to a second aspect, an embodiment provides a neurosynaptic-like device, comprising:
a semiconductor base layer comprising a base layer substrate of a two-terminal neurosynaptic device or a base layer substrate of a three-terminal neurosynaptic device;
a first semiconductor device layer on the semiconductor base layer capable of simulating a biological post-synaptic membrane;
the functional layer is positioned on the first semiconductor device layer and is made of an insulating material doped with ions, wherein the insulating material is a high polymer material or a biological organic material with insulating property;
a second semiconductor device layer on the functional layer capable of simulating a biological presynaptic membrane.
According to the neurosynaptic-like device and the manufacturing method thereof, the neurosynaptic-like device utilizes the polymer material or the biological organic material doped with ions as the functional layer of the neurosynaptic-like device, and the polymer material or the biological organic material is doped with ions, so that the biological synapse behavior is simulated from the principle of generating the synapse behavior, which exceeds the behavior-level simulation of the traditional neurosynaptic-like device. In addition, because the functional layer is internally provided with movable ions, current response can be generated under lower electrical signal stimulation (pulse), so that the working voltage is reduced, meanwhile, because the functional layer is made of an insulating material, the voltage sensitivity of the functional layer is improved after ions are doped, but the generated current is not overlarge, so that the working voltage and the response current of the device are lower, the working voltage and the power consumption can be matched with biological synapses, the working voltage and the power consumption of the device can be effectively reduced, the device can be matched with the biological synapses and even surpass the biological synapse characteristic, the device can also realize the conversion of digital-analog signals, the function of a complex circuit or system can be realized through a single solid-state electronic device structure, and the application of the device is wider.
Drawings
FIG. 1 is a schematic diagram illustrating a manufacturing process of a neurosynaptic-like device according to an embodiment of the present invention;
FIG. 2 is a flow chart of the functional layer fabrication process provided by one embodiment of the present invention;
FIG. 3 is a schematic diagram of a simulated biological synapse test according to an embodiment of the invention;
FIG. 4 is a schematic diagram illustrating synaptic current signals simulated by a neurosynaptic-like device according to an embodiment of the present invention;
FIG. 5 is a diagram illustrating digital-to-analog signal conversion of a neurosynaptic-like device according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the following detailed description and accompanying drawings. Wherein like elements in different embodiments are numbered with like associated elements. In the following description, numerous details are set forth in order to provide a better understanding of the present application. However, those skilled in the art will readily recognize that some of the features may be omitted or replaced with other elements, materials, methods in different instances. In some instances, certain operations related to the present application have not been shown or described in detail in order to avoid obscuring the core of the present application from excessive description, and it is not necessary for those skilled in the art to describe these operations in detail, so that they may be fully understood from the description in the specification and the general knowledge in the art.
Furthermore, the features, operations, or characteristics described in the specification may be combined in any suitable manner to form various embodiments. Also, the various steps or actions in the method descriptions may be transposed or transposed in order, as will be apparent to one of ordinary skill in the art. Thus, the various sequences in the specification and drawings are for the purpose of describing certain embodiments only and are not intended to imply a required sequence unless otherwise indicated where such sequence must be followed.
The numbering of the components as such, e.g., "first", "second", etc., is used herein only to distinguish the objects as described, and does not have any sequential or technical meaning. The term "connected" and "coupled" when used in this application, unless otherwise indicated, includes both direct and indirect connections (couplings).
As is known from the background art, the current neurosynaptic device is limited in application and has high operating voltage and power consumption.
Biological synapses have been studied as being composed of a presynaptic membrane, a postsynaptic membrane, and a synaptic cleft between the two. The arrival of nerve impulses at the presynaptic membrane causes the release of neurotransmitters in the presynaptic membrane, which diffuse in the synaptic cleft and eventually reach the postsynaptic membrane. Neurotransmitters bind to protein receptors on the postsynaptic membrane, causing the opening of ion channels on the postsynaptic membrane, thereby altering the permeability of the postsynaptic membrane to different ions, causing the postsynaptic membrane to produce inhibitory or excitatory potential/current changes. The change of the postsynaptic membrane caused by the change of the ion concentration in the synaptic cleft plays a role in transmitting information and is the basis of the function of the biological nerve synapse. In the developed two-terminal type neurosynaptic device, an upper electrode and a lower electrode are respectively used as a presynaptic membrane and a postsynaptic membrane, an electric signal simulating action potential is applied to one electrode (presynaptic membrane), and the current or potential measured on the other electrode (postsynaptic membrane) simulates postsynaptic current or potential of the nerve. The functional layer between the two electrodes simulates synaptic cleft and is a key material for determining the performance of the nerve synapse-like device.
Most of the neurosynaptic devices in the prior art include two-dimensional materials (molybdenum disulfide, graphene and the like), nano materials (nanoclusters, nanowires, carbon nanotubes and the like), inorganic materials (metal oxides, perovskites and the like), biological organic materials (natural extraction materials, artificial synthetic materials and the like) and the like. Most of the researches are based on inorganic materials, but the inorganic materials have the properties of rigidity, difficult biodegradation and poor biocompatibility, and limit the application of the neurosynaptic-like device in the fields of intelligent medical treatment, wearable equipment and the like.
At present, the research on the neurosynaptic of the artificially synthesized organic material based on the high-molecular polymer material is very limited. In addition, the existing quasi-nerve synapse device based on artificially synthesized organic materials has high working voltage and power consumption, and is difficult to match with the action potential voltage (-70 mV-30 mV) of a biological synapse millivolt magnitude and the power consumption (1-10 fJ/synapse event) of a normal focus magnitude. Generally, the biological nerve pulse signal is 30-70 mV, and the neuromorphic device generally needs several volts or even more than ten volts of electric signal driving, so that the neuromorphic device cannot complete the direct transmission and processing between the biological nerve pulse signal and the electric signal of the device.
In the neurosynaptic-like device provided by the embodiment of the invention, the functional layer of the neurosynaptic-like device is made of the insulating material doped with ions, so that interstitial fluid in a biological synapse gap can be well simulated. Ions are doped in a high molecular polymer material or a biological organic material, and the biological synaptic behavior is simulated based on the principle of generating the synaptic behavior, which exceeds the behavior-level simulation of the traditional nerve synaptic device. In addition, because the functional layer is internally provided with movable ions, current response can be generated under the stimulation (pulse) of lower electrical signals, so that the working voltage is reduced, and meanwhile, because the functional layer is made of an insulating material, the voltage sensitivity of the functional layer is improved after ions are doped, but the generated current is not too large, so that the working voltage and the response current of the device are lower, the power consumption of the device is low, and the applicability is wider.
In one embodiment, a neurosynaptic-like device is provided, comprising: the semiconductor device comprises a semiconductor base layer, a first semiconductor layer, a second semiconductor layer and a functional layer between the first semiconductor layer and the second semiconductor layer.
The semiconductor substrate comprises a substrate of a two-terminal type neurosynaptic device or a substrate of a three-terminal type neurosynaptic device. The first semiconductor device layer is capable of simulating a biological post-synaptic membrane and the second semiconductor device layer is capable of simulating a biological pre-synaptic membrane. The functional layer is made of an insulating material doped with ions, wherein the insulating material is a high-molecular polymer material or a biological organic material with insulating property. The functional layer is made of an insulating material with ions, so that the functional layer not only has movable ions, but also can meet the insulating effect, and can generate current response under lower electrical signal stimulation (pulse), so that the working voltage is reduced, and the matching of the working voltage and the power consumption with biological synapses is realized.
The neurosynaptic device provided in the present embodiment may be a two-terminal neurosynaptic device or a three-terminal neurosynaptic device. For example, the two-terminal type neurosynaptic device in the present embodiment may be a resistive random access memory RRAM, a phase change memory PCM, or the like, and the three-terminal type neurosynaptic device may be a floating gate transistor, a ferroelectric transistor, an electrolyte gate transistor, a phototransistor, or the like.
The embodiment also provides a manufacturing method of the quasi-neurosynaptic device, which comprises the following steps:
In this embodiment, the semiconductor substrate may include a substrate of a two-terminal neurosynaptic device or a substrate of a three-terminal neurosynaptic device. It is understood that when the semiconductor substrate is a substrate of a two-terminal neurosynaptic device, the substrate may be silicon or glass.
When the semiconductor base layer comprises a base layer substrate of a three-terminal neurosynaptic device, the semiconductor base layer may be a multilayer semiconductor structure comprising a substrate and a buffer layer formed over the substrate, for example, a silicon substrate and a buffer layer formed over the silicon substrate or other base layers capable of forming a three-terminal semiconductor device.
In this example, the semiconductor substrate was cleaned and dried.
And 2, forming a first semiconductor device layer on the semiconductor base layer, wherein the first semiconductor device layer can simulate a biological post-synaptic membrane.
In this embodiment, since the neural device having a "sandwich" structure of metal-insulator-metal is formed, the material of the first semiconductor device layer may be metal.
In this embodiment, a metal is formed on the semiconductor substrate by a deposition or sputtering process as a lower electrode of the semiconductor device in response to the neural signal transmitted from the functional layer.
In some embodiments, if a three-terminal neural device structure is formed, the first semiconductor layer may be an active layer or a channel layer formed on a semiconductor substrate.
Being able to mimic a biological post-synaptic membrane may be understood as being that the current or potential measured on the first semiconductor device layer is able to mimic a post-synaptic current or potential.
And 3, forming a functional layer on the first semiconductor device layer, wherein the functional layer is made of an insulating material doped with ions, and the insulating material is a high-molecular polymer material or a biological organic material with insulating property.
In a neurosynaptic-like device, a functional layer between the first semiconductor layer and the second semiconductor layer can simulate a protruding gap, which is a key material determining the performance of the neurosynaptic-like device. For example, when a metal-insulator-metal "sandwich" structure of the neural device is formed, the functional layer is an insulating layer between the metals. When the semiconductor base layer is a base layer substrate of a three-terminal neurosynaptic device, the functional layer corresponds to a gate insulating layer in a three-terminal transistor.
In this embodiment, the functional layer is an insulating material doped with ions, and the insulating material is a high molecular polymer material or a bio-organic material. The functional layer of the neuro-synapse-like device is made of a high-molecular polymer material or a biological organic material doped with ions, and interstitial fluid in a biological synapse gap can be well simulated. In the biological synapse, the protruding gap is formed by tissue fluid, and the tissue fluid is filled with various ions (sodium ions, potassium ions, calcium ions, or the like), so in this embodiment, ions are doped in a polymer material or a bio-organic material, and a biological synapse behavior is simulated based on a principle of generating a synapse behavior, and a current response can be generated under a lower electrical signal stimulus (pulse), so that the operating voltage is reduced, and simultaneously, not only can the voltage sensitivity be improved, but also the generated current is not too large, so that the operating voltage and the response current of the whole neurosynaptic-like device are lower, and the power consumption of the device is reduced.
Referring to fig. 2, in some embodiments, a method of forming a functional layer on the first semiconductor device layer includes:
In the present embodiment, a solvent capable of dissolving a polymer material is provided, for example, polyvinyl alcohol (PVA) is used as the polymer material, and a solvent capable of dissolving PVA is provided.
And 102, carrying out ion doping treatment on the solvent.
It is understood that salts are meant to include compounds in which a metal ion or ammonium ion (NH4+) is bound to an acid ion, such as calcium sulfate, copper chloride, sodium acetate, and the like. Thus, the salt is dissolved in the solvent so that the solvent has a plurality of positive or negative ions capable of moving therein.
In this embodiment, a doping salt is dissolved in the solvent, and the doping salt used may be one or more of a sodium salt, a potassium salt, a calcium salt, a lithium salt, a strontium salt, or a magnesium salt.
When the high molecular polymeric material or the bio-organic material is dissolved in the solvent, the ratio between the high molecular polymeric material or the bio-organic material and the salt may be adjusted as necessary. For example, if a larger amount of ions in the functional layer is required, the salt ratio can be increased appropriately, and then the operating voltage of the device may be smaller and the operating current of the device may be increased after the functional layer is formed. If a smaller number of ions in the functional layer is required, the salt ratio can be reduced by a small amount as appropriate.
In this embodiment, when a high molecular polymer material is dissolved in the solvent, the high molecular polymer material is polyvinyl alcohol, the doping salt is sodium acetate, and the mass ratio of the polyvinyl alcohol to the sodium acetate is adjusted to be 25: 1-25: 20, respectively. For example, when the mass ratio of polyvinyl alcohol to sodium acetate is 25:1, the prepared neurosynaptic device can have a synapse function under a working voltage of 1mV, and the synapse response current is low, so that the neurosynaptic device is suitable for being applied to a low-power-consumption scene. When the proportion of the doped salt is increased to enable the mass ratio of the polyvinyl alcohol to the sodium acetate salt to be 25:20, the solution of the sodium acetate salt in the polyvinyl alcohol is saturated, namely the salt in the high polymer material reaches the maximum doping amount, and the prepared neurosynaptic device can have a synapse function under the working voltage of 1mV, but the synapse response current is large and the power consumption is likely to be large.
In this embodiment, the doped salt is first dissolved in the solvent, and then the polymeric material or the bio-organic material is dissolved, because: the salt is dissolved in the solvent to form a uniform solution more easily, and then the high molecular polymer material or the biological organic material is dissolved in the solvent, so that the method is easier to realize and more uniform. If the high molecular polymer material or the biological organic material is dissolved first, a concentrated colloidal liquid can be directly formed, and the salt is not well dissolved continuously.
In some embodiments, both sequences are possible if the concentrations of the dopant salt and the polymeric material are not large.
In some embodiments, in order to sufficiently dissolve the doping salt and the high molecular polymer material in the solvent, appropriate heating or temperature raising treatment may be performed during stirring. Wherein the temperature rise temperature is not more than 70 ℃, so as to avoid damaging the characteristics of doped salt or high molecular polymer materials or biological organic materials.
And 104, coating the doping type solution on the first semiconductor layer to form a functional layer.
In this embodiment, the solution or gel of the salt-doped polymer material formed in the above step is dropped onto the first semiconductor layer, and then a uniform thin film is formed by a spin coating method at a certain rotation speed. And then, drying the spin-coated film at a certain temperature to form a more compact and stable film serving as a functional layer.
In the embodiment, the high molecular polymer material doped salt is selected as the functional layer, so that the functional layer has good biocompatibility, degradability and stretchability, and meanwhile, the defects of poor extraction and difficult control of uniformity of natural organic biological materials can be overcome, and the functional layer plays a great role in constructing an electronic-biological interaction bionic system.
And 4, forming a second semiconductor device layer on the functional layer, wherein the second semiconductor device layer can simulate a biological presynaptic film.
In this embodiment, the second semiconductor device layer may be metal, and correspondingly, metal may be formed on the functional layer through a deposition or sputtering process to serve as an upper electrode of the semiconductor device, so as to respond to external electrical stimulation and transmit electrical signals to the functional layer.
In some embodiments, when the semiconductor substrate is a substrate of a three-terminal neurosynaptic device, the second semiconductor device layer is a gate layer of the three-terminal device, and is located on the gate insulating layer.
In this embodiment, the neurosynaptic-like device obtained by the above embodiments uses the polymer material doped with salt as a functional layer, so that a biological mechanism generating a synapse behavior can be simulated, a biological synapse can be simulated according to a principle, and a working voltage and power consumption can be reduced, so that matching between the working voltage and the power consumption and the biological synapse can be realized.
Referring to FIG. 5, the neurosynaptic device 200 formed according to the above method is a device based on a polymer material doped with a salt, and can achieve digital-to-analog signal conversion, in addition to effectively reducing the operating voltage and power consumption of the device to match the biological synapses or even exceed the biological synapse characteristics. The digital signal has only high and low level states, and the analog signal can be subjected to multi-value continuous change. The computer can only process some structural data, and still cannot process some non-structural data. The computer processes data and calculates by using digital signals, and most information in the world exists in the form of analog signals, and the information must be converted into digital signals before being processed by the computer, and complex circuits or systems are usually needed for realizing the conversion of the signals. For the neurosynaptic device 200 based on the salt-doped high polymer material, the binary square wave pulse signal 301 can be converted into the continuous analog signal 302 through the neurosynaptic device 200, so that the conversion of the digital signal and the analog signal is realized, and the function of a complex circuit or system can be realized through a single solid-state electronic device structure, so that the neurosynaptic device becomes an important basic element for constructing a high-integration complex neuromorphic system.
Referring to fig. 3 and 5, in the present embodiment, performance measurements and results of the synaptic function of the formed neurosynaptic device 200 are provided. For example, in the prepared metal-insulator-metal sandwich structure, the metal upper electrode 201 simulates a biological presynaptic membrane 401, the metal lower electrode 203 simulates a biological postsynaptic membrane 403, and the salt-doped polymeric material (functional layer) 202 can simulate a biological synaptic cleft 402 and its internal ions. An electrical square wave signal 301 simulating a neural action potential is applied to the upper electrode 201 of the neurosynaptic-like device, and a current 302 generated by the neurosynaptic-like device is measured at the lower electrode simulating a current generated by the biological excitatory/inhibitory postsynaptic membrane 403.
Referring to FIG. 4, a neurosynaptic-like device 200 made of polymer-based material can generate pA-level current under the stimulation of an electrical pulse with amplitude of 1mV and duration of 100ms, and can simulate post-neurosynaptic current generated by biological synapses under a neural action potential. It can be seen that the large number of mobile ions generated in the polymer material doped with salt enables the prepared neurosynaptic-like device 200 to generate a corresponding current response under a very low stimulation voltage, thereby solving the problem of high operating voltage and enabling the millivolt-level operating voltage of the neurosynaptic-like device to be matched with the nerve action potential of biological synapses. Because the high molecular polymer material has better insulating property, the introduced large amount of movable ions improve the voltage stimulation sensitivity, and the current still keeps a lower level, thereby being beneficial to realizing low-power consumption application. The power consumption of the neurosynaptic device prepared based on the doped salt polymer is in the normal joule level, and the power consumption of each synaptic event can be as low as about 0.1 normal joule, which is lower than that of the biological synapse device by 1-10 normal joules. The lowest voltage (1mV) provided by the measuring instrument is limited, the amplitude of the electric stimulation voltage is further reduced or the duration is shortened, and lower power consumption can be obtained. In addition, the area of the metal electrode is further reduced, so that the current is reduced, and the power consumption is reduced.
The present invention has been described in terms of specific examples, which are provided to aid understanding of the invention and are not intended to be limiting. For a person skilled in the art to which the invention pertains, several simple deductions, modifications or substitutions may be made according to the idea of the invention.
Claims (10)
1. A method of fabricating a neurosynaptic-like device, comprising:
providing a semiconductor substrate, wherein the semiconductor substrate comprises a substrate of a two-terminal type neurosynaptic device or a substrate of a three-terminal type neurosynaptic device;
forming a first semiconductor device layer on the semiconductor base layer, the first semiconductor device layer capable of simulating a biological post-synaptic membrane;
forming a functional layer on the first semiconductor device layer, wherein the functional layer is made of an insulating material doped with ions, and the insulating material is a high-molecular polymer material or a biological organic material with insulating property;
forming a second semiconductor device layer on the functional layer, the second semiconductor device capable of simulating a biological presynaptic film.
2. The manufacturing method according to claim 1, wherein forming a functional layer on the first semiconductor device layer comprises:
providing a solvent capable of dissolving a polymeric or bio-organic material;
carrying out ion doping treatment on the solvent;
dissolving a high molecular polymer material or a biological organic material in the solvent to form a uniform doped solution;
and coating the doping type solution on the first semiconductor layer to form a functional layer.
3. The manufacturing method according to claim 2, wherein the ion doping treatment of the solvent includes: dissolving a doping salt in the solvent, wherein the doping salt comprises one or more of a sodium salt, a potassium salt, a calcium salt, a lithium salt, a strontium salt, or a magnesium salt.
4. The method according to claim 3, wherein the step of dissolving the polymeric or bio-organic material in the solvent comprises: adjusting the ratio between the polymeric or bio-organic material and the salt.
5. The method according to claim 4, wherein when a polymer material is dissolved in the solvent, the polymer material is polyvinyl alcohol, and the dopant salt is a sodium acetate salt;
adjusting the ratio range of the polyvinyl alcohol to the sodium acetate salt to be 25: 1-25: 20.
6. the method of manufacturing of claim 2, wherein after coating the dopant type solution over the first semiconductor layer, further comprising: and drying the doped solution on the first semiconductor layer.
7. The method of claim 2, wherein after dissolving the polymeric or bio-organic material in the solvent, further comprising: and heating the solvent, wherein the temperature is not higher than 70 ℃.
8. The method of manufacturing of claim 1, wherein when the semiconductor base layer is a base layer substrate of a two-terminal neurosynaptic device:
the first semiconductor device layer is a metal layer,
in a corresponding manner, the first and second electrodes are,
the forming a first semiconductor device layer on the semiconductor base layer includes: forming a metal on the semiconductor substrate by a deposition or sputtering process as a lower electrode of the semiconductor device in response to the nerve-like signal transmitted from the functional layer;
the second semiconductor device layer is a metal layer,
in a corresponding manner, the first and second electrodes are,
forming a second semiconductor device layer on the functional layer includes: forming a metal on the functional layer as an upper electrode of the semiconductor device by a deposition or sputtering process to respond to an external electrical stimulus and deliver an electrical signal to the functional layer.
9. The method of manufacturing of claim 1, wherein when the semiconductor base layer is a base layer substrate of a three terminal neurosynaptic device:
in a corresponding manner, the first and second electrodes are,
the first semiconductor device layer is a channel layer in a three-terminal transistor device, the second semiconductor device layer is a gate layer in the three-terminal transistor device, and the functional layer corresponds to a gate insulating layer in the three-terminal transistor.
10. A neurosynaptic-like device, comprising:
a semiconductor base layer comprising a base layer substrate of a two-terminal neurosynaptic device or a base layer substrate of a three-terminal neurosynaptic device;
a first semiconductor device layer on the semiconductor base layer capable of simulating a biological post-synaptic membrane;
the functional layer is positioned on the first semiconductor device layer and is a high molecular polymer material doped with ions or a biological organic material doped with ions;
a second semiconductor device layer on the functional layer capable of simulating a biological presynaptic membrane.
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| CN114864735A (en) * | 2022-05-11 | 2022-08-05 | 中南大学 | Preparation method of photoelectric transistor based on femtosecond laser and transistor array |
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