CN113629158B - Wide-spectrum polarized light detector and preparation method thereof - Google Patents
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
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- H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/0205—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows
- G01J3/0224—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows using polarising or depolarising elements
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
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Abstract
The invention provides a wide-spectrum polarized light detector and a preparation method thereof, wherein the wide-spectrum polarized light detector comprises a substrate layer and a polarization layer; the base layer has a molding surface; the polarization layer is arranged on the molding surface and comprises a source electrode, an active layer and a drain electrode which are sequentially arranged from left to right; the active layer is an N-type two-dimensional layered semiconductor material palladium phosphorus sulfide. In the technical scheme provided by the invention, the active layer is an N-type two-dimensional layered semiconductor material palladium phosphosulfide, and the structure has anisotropy, so that sensitive polarized light detection is facilitated; as an N-type semiconductor, the Fermi level of the N-type semiconductor is close to a conduction band, the transition frequency of a wide energy band from a valence band to the conduction band and a neighboring energy band in the conduction band of electrons is improved, multi-channel transition of the electrons is realized, the spectrum detection range of the photoelectric detector is widened, and the solar dead zone to the near infrared zone is formed.
Description
Technical Field
The invention relates to the technical field of photoelectricity, in particular to a wide-spectrum polarized light detector and a preparation method thereof.
Background
New two-dimensional semiconductors play an increasingly important role in modern nanoelectronics and optoelectronics. With the rapid development of science and technology, the requirements on the photoelectric detector are higher and higher, and the common photoelectric detector cannot meet the requirements of people, so that the widening of the spectrum range of the photoelectric detector becomes an important direction.
Since the successful discovery of graphene in 2004, low-dimensional semiconductor polarized light detectors with polarization sensitivity have gradually appeared, and polarized light detection plays an important role in the fields of infrared imaging, environmental monitoring, biological detection and remote sensing detection. However, the detection spectrum of these materials is limited, e.g., to the visible or near infrared region. In the nature, different objects have different polarization states due to different materials and surface information, information carried by reflected light of the different objects has unique polarization states, and after the reflected polarized light irradiates on the two-dimensional semiconductor device, light excites carriers to cause the change of conductivity, so that optical signals in the nature are converted into corresponding electrical signals, and the application of the image sensor is realized. It is therefore an important direction to find materials with broad spectral response and polarization sensitivity and to fabricate them into polarized photodetectors and image sensors.
Disclosure of Invention
The invention mainly aims to provide a wide-spectrum polarized light detector and a preparation method thereof, and aims to solve the problem of detection spectrum range limitation.
To achieve the above object, the present invention provides a broadband spectrum polarized light detector, comprising:
a base layer having a molding surface; and the number of the first and second groups,
the polarization layer is arranged on the molding surface and comprises a source electrode, an active layer and a drain electrode which are sequentially arranged from left to right;
wherein the active layer is N-type two-dimensional layered palladium phosphosulfide.
Optionally, the source electrode and the drain electrode are both made of gold.
Optionally, the base layer comprises:
a gate electrode; and the number of the first and second groups,
and the insulating layer is arranged on the end face of the gate electrode, and the end face of the insulating layer, which is back to the gate electrode, forms a molding surface.
Optionally, the gate electrode comprises a silicon wafer; and/or the presence of a gas in the gas,
the insulating layer includes a silicon dioxide substrate.
Optionally, the active layer has an average thickness of 15 to 25nm; and/or the presence of a gas in the gas,
the active layer had a width of 5 μm, a height of 21nm and a length of 9 μm.
Optionally, the thickness of the source electrode and the drain electrode are both 70nm, the length is 120 μm, and the width is 150 μm.
The invention also provides a preparation method of the wide-spectrum polarized light detector, which comprises the following steps:
transferring on a molding surface to obtain an active layer through mechanical stripping to obtain an initial layer;
spin coating a mask material on the initial layer;
etching the mask material to form a source electrode region and a drain electrode region;
depositing to form a source electrode and a drain electrode;
and cleaning and packaging to obtain the broad spectrum polarized light detector.
Optionally, the step of transferring and forming the active layer on the molding surface by mechanical lift-off to obtain an initial layer includes:
and transferring the mechanically stripped N-type two-dimensional layered palladium phosphorus sulfide onto the molding surface through polydimethylsiloxane to obtain the active layer.
Optionally, the step of forming the source electrode region and the drain electrode region by etching on the mask material includes:
a source electrode region and a drain electrode region are formed on the mask material by an electron beam lithography method.
Optionally, the step of obtaining the broad-spectrum polarized light detector by cleaning and packaging includes:
sequentially cleaning with acetone, ethanol and deionized water to obtain a structure to be packaged;
and packaging the structure to be packaged to obtain the wide-spectrum polarized light detector.
Optionally, the mask material comprises polymethyl methacrylate.
In the technical scheme provided by the invention, the active layer is an N-type two-dimensional layered semiconductor material palladium phosphorus sulfide, and the structure has anisotropy, so that sensitive polarized light detection is facilitated; as an N-type semiconductor, the Fermi level of the N-type semiconductor is close to a conduction band, so that the transition frequency of a wide energy band from a valence band to the conduction band and a near-neighbor energy band in the conduction band of electrons is improved, the multi-channel transition of the electrons is realized, the spectrum detection range of the photoelectric detector is widened, and the solar dead zone to the near-infrared zone is formed.
Drawings
FIG. 1 is a schematic cross-sectional front view of an embodiment of a broad-spectrum polarized light detector provided in the present invention;
FIG. 2 is a schematic top view of the broad spectrum polarized light detector of FIG. 1;
FIG. 3 is a block flow diagram of an embodiment of a method for fabricating a broad spectrum polarized light detector according to the present invention;
fig. 4 is a schematic diagram of fermi level transition of the broad spectrum polarization light detector provided by the present invention.
The reference numbers illustrate:
| reference numerals | Name(s) | Reference numerals | Name (R) |
| 100 | Wide spectrum polarized |
2 | Polarizing layer |
| 1 | |
21 | |
| 11 | |
22 | |
| 12 | |
23 | Drain electrode |
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to specific embodiments and the accompanying drawings.
It should be noted that, if directional indication is involved in the embodiment of the present invention, the directional indication is only used for explaining the relative positional relationship, the motion situation, and the like between the components in a certain posture, and if the certain posture is changed, the directional indication is changed accordingly.
In addition, if there is a description of "first", "second", etc. in an embodiment of the present invention, the description of "first", "second", etc. is for descriptive purposes only and is not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.
New two-dimensional semiconductors play an increasingly important role in modern nanoelectronics and optoelectronics. With the rapid development of science and technology, the requirements on the photoelectric detector are higher and higher, and the ordinary photoelectric detector cannot meet the requirements of people, so that the widening of the spectral range of the photoelectric detector becomes an important direction.
Since the successful discovery of graphene in 2004, low-dimensional semiconductor polarized light detectors with polarization sensitivity have gradually appeared, and polarized light detection plays an important role in the fields of infrared imaging, environmental monitoring, biological detection and remote sensing detection. However, the detection spectrum of these materials is limited, e.g., to the visible or near infrared region. In the nature, different objects have different polarization states due to different materials and surface information, information carried by reflected light of the different objects has unique polarization states, and after the reflected polarized light irradiates on the two-dimensional semiconductor device, light excites carriers to cause the change of conductivity, so that optical signals in the nature are converted into corresponding electrical signals, and the application of the image sensor is realized. It is therefore an important direction to find materials with broad spectral response and polarization sensitivity and to fabricate them into polarized photodetectors and image sensors.
The invention provides a wide-spectrum polarized light detector and a preparation method thereof, wherein fig. 1 to 3 are an embodiment provided by the invention.
Referring to fig. 1 to fig. 2, the present invention provides a broadband spectrum polarized light detector 100, which includes a substrate layer 1 and a polarization layer 2; the substrate layer 1 has a profiled surface; the polarization layer 2 is arranged on the molding surface and comprises a source electrode 21, an active layer 22 and a drain electrode 23 which are arranged from left to right in sequence; wherein the active layer 22 is an N-type two-dimensional layered palladium phosphosulfide.
In the technical scheme provided by the invention, the active layer is an N-type two-dimensional layered semiconductor material palladium phosphorus sulfide, and the structure has anisotropy, so that sensitive polarized light detection is facilitated; as an N-type semiconductor, the Fermi level of the N-type semiconductor is close to a conduction band, the transition frequency of a wide energy band from a valence band to the conduction band and a neighboring energy band in the conduction band of electrons is improved, multi-channel transition of the electrons is realized, the spectrum detection range of the photoelectric detector is widened, and the solar dead zone to the near infrared zone is formed.
The source electrode 21 and the drain electrode 23 are made of a metal material, and the source electrode 21 and the drain electrode 23 may be formed in various embodiments as long as the source electrode and the drain electrode can be formed; specifically, in the present embodiment, the material of the source electrode 21 and the drain electrode 23 is gold.
In addition, in the present embodiment, the base layer 1 includes the gate electrode 11 and the insulating layer 12: the insulating layer 12 is provided on the end face of the gate electrode 11, and the end face of the insulating layer 12 facing away from the gate electrode 11 forms a molding surface.
Specifically, the gate electrode 11 includes a silicon wafer.
In addition, the insulating layer 12 includes a silicon dioxide substrate.
The gate electrode 11 and the insulating layer 12 may be provided alternatively or simultaneously, and are not limited thereto.
To ensure the effectiveness of the active layer 22 material, the average thickness of the active layer 22 is 15 to 25nm. Specifically, in the present embodiment, the thickness of the active layer 22 is 20nm.
The width of the active layer 22 was 5 μm, the height was 21nm, and the length was 9 μm. While ensuring the effectiveness of the active layer 22, while saving material
It should be noted that, the two related art arrangements of the active layer 22 may exist alternatively or simultaneously, and are not limited herein.
On the other hand, the source electrode 21 and the drain electrode 23 each had a thickness of 70nm, a length of 120 μm and a width of 150 μm.
Referring to fig. 3, based on the above-mentioned broadband spectrum polarized light detector 100, the present invention further provides a method for manufacturing a broadband spectrum polarized light detector, including:
s10, transferring and forming an active layer on the molding surface by a mechanical stripping method to obtain an initial manufacturing layer;
s20, spin-coating a mask material on the initial layer;
s30, etching the mask material to form a source electrode area and a drain electrode area;
s40, depositing to form a source electrode and a drain electrode;
and S50, cleaning and packaging to obtain the wide-spectrum polarized light detector.
According to the technical scheme provided by the invention, the high-quality two-dimensional semiconductor material can be transferred to the base layer through a mechanical stripping method.
Further, step S10 includes:
and S11, transferring the mechanically stripped N-type two-dimensional layered palladium phosphosulfide to the molding surface through polydimethylsiloxane to obtain the active layer.
Further, step S30 includes:
and S31, forming a source electrode area and a drain electrode area on the mask material through an electron beam etching method.
Step S50 includes:
s51, sequentially cleaning with acetone, ethanol and deionized water to obtain a structure to be packaged;
and S52, packaging the structure to be packaged to obtain the wide-spectrum polarized light detector.
In this embodiment, the mask material comprises polymethyl methacrylate.
Palladium phosphosulfide (PdPS) is used as a novel two-dimensional semiconductor material to be applied to a wide-spectrum polarized light detector and an image sensor, and the multi-channel transition of electrons is used for realizing the light detection range from solar blind to near-infrared light domain.
The phosphorus palladium sulfide as the active layer belongs to an orthorhombic structure with a space group of Pbcn, has high anisotropy and polarization sensitivity to light; the photoresponse range of the semiconductor material palladium sulfide phosphide (PdPS) contains a solar dead zone, the whole visible light and near infrared light domains, so that the semiconductor material palladium sulfide can be applied to a wide-spectrum polarized light detector and an image sensor with wide spectrum.
Palladium phosphorus sulfide (PdPS) is used as a novel N-type semiconductor material, a main carrier is an electron, and the Fermi level of the PdPS is close to the bottom of a conduction band; when light irradiates on the palladium phosphide sulfide (PdPS), the energy of photons is converted into the energy of electrons, so that the electrons in a low energy state are promoted to jump to a high energy state; as shown in fig. 4, since the fermi level is located close to the conduction band, the probability of electron transition from a low energy state to a high energy state increases, so that the probability of free electron occurrence in the conduction band increases, multi-channel transition of electrons is formed, and the light detection range from solar blind to near-infrared light domain is realized.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (9)
1. A broad spectrum polarized light detector, comprising:
a base layer having a molding surface; and (c) a second step of,
the polarization layer is arranged on the molding surface and comprises a source electrode, an active layer and a drain electrode which are sequentially arranged from left to right;
wherein the active layer is N-type two-dimensional layered palladium phosphorus sulfide;
the width of the active layer is 5 mu m, the height of the active layer is 21nm, and the length of the active layer is 9 mu m;
the palladium sulfide phosphorus as an active layer belongs to an orthorhombic structure with a space group of Pbcn, has high anisotropy and polarization sensitivity to light, and the main carrier of the palladium sulfide phosphorus is electrons, and the Fermi level of the palladium sulfide phosphorus is close to the bottom of a conduction band; when light irradiates on the palladium phosphide sulfide, the energy of photons is converted into the energy of electrons, so that the electrons in a low energy state are promoted to jump to a high energy state, the probability of the electrons jumping from the low energy state to the high energy state is increased, the probability of free electrons appearing in a conduction band is increased, multi-channel jump of the electrons is formed, and the light detection range from solar blindness to a near infrared light region is realized.
2. The broad spectrum polarized light detector of claim 1, wherein the source electrode and the drain electrode are both gold.
3. The broad spectrum polarizing photodetector of claim 1, wherein the substrate layer comprises:
a gate electrode; and the number of the first and second groups,
and the insulating layer is arranged on the end face of the gate electrode, and the insulating layer back to the end face of the gate electrode forms the molding surface.
4. The broad spectrum polarizing photodetector of claim 3, wherein the gate electrode comprises a silicon wafer; and/or the presence of a gas in the atmosphere,
the insulating layer includes a silicon dioxide substrate.
5. The broad spectrum polarizing photodetector of claim 1, wherein the source electrode and the drain electrode are each 70nm thick, 120 μm long and 150 μm wide.
6. A method of fabricating a broad spectrum polarized light detector as claimed in any one of claims 1 to 5 comprising:
transferring and forming the active layer on the molding surface by a mechanical stripping method to obtain an initial molding layer;
spin coating a mask material on the initial layer;
etching the mask material to form a source electrode area and a drain electrode area;
depositing to form the source electrode and the drain electrode;
and cleaning and packaging to obtain the wide-spectrum polarized light detector.
7. The method of claim 6, wherein the step of transferring the active layer on the molding surface by mechanical lift-off to form an initial layer comprises:
and transferring the mechanically stripped N-type two-dimensional layered palladium phosphorus sulfide onto the molding surface through polydimethylsiloxane to obtain the active layer.
8. The method of claim 6, wherein the step of etching a source electrode region and a drain electrode region on the mask material comprises:
forming the source electrode region and the drain electrode region on the mask material by an electron beam lithography method.
9. The method of claim 6, wherein the step of cleaning the package to obtain the broad spectrum polarized light detector comprises:
sequentially cleaning acetone, ethanol and deionized water to obtain a structure to be packaged;
and packaging the structure to be packaged to obtain the wide-spectrum polarized light detector.
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| US3761572A (en) * | 1969-09-12 | 1973-09-25 | Du Pont | Palladium phosphide chalcogenides |
| CN110620164A (en) * | 2019-09-25 | 2019-12-27 | 中国科学院半导体研究所 | Polarized light detector based on two-dimensional layered semiconductor material and preparation method thereof |
| CN112742423A (en) * | 2020-12-15 | 2021-05-04 | 中山大学 | Preparation of palladium-phosphorus-sulfur two-dimensional polycrystalline material and application thereof in electrochemical field |
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2021
- 2021-08-05 CN CN202110898961.9A patent/CN113629158B/en active Active
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3761572A (en) * | 1969-09-12 | 1973-09-25 | Du Pont | Palladium phosphide chalcogenides |
| CN110620164A (en) * | 2019-09-25 | 2019-12-27 | 中国科学院半导体研究所 | Polarized light detector based on two-dimensional layered semiconductor material and preparation method thereof |
| CN112742423A (en) * | 2020-12-15 | 2021-05-04 | 中山大学 | Preparation of palladium-phosphorus-sulfur two-dimensional polycrystalline material and application thereof in electrochemical field |
Non-Patent Citations (1)
| Title |
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| Ab initio study of two-dimensional PdPS as an ideal light harvester and promising catalyst for hydrogen evolution reaction;Yalong Jiao等;《Materials Today Energy》;20180112;136-140 * |
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