CN113629131A - Terminal structure of zoned gradual change field limiting ring and design method thereof - Google Patents

Terminal structure of zoned gradual change field limiting ring and design method thereof Download PDF

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CN113629131A
CN113629131A CN202010386415.2A CN202010386415A CN113629131A CN 113629131 A CN113629131 A CN 113629131A CN 202010386415 A CN202010386415 A CN 202010386415A CN 113629131 A CN113629131 A CN 113629131A
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field limiting
limiting ring
region
width
terminal structure
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桑玲
吴军民
夏经华
张文婷
查祎英
田丽欣
王耀华
金锐
杨霏
安运来
赛朝阳
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State Grid Corp of China SGCC
Global Energy Interconnection Research Institute
Xiamen Power Supply Co of State Grid Fujian Electric Power Co Ltd
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State Grid Corp of China SGCC
Global Energy Interconnection Research Institute
Xiamen Power Supply Co of State Grid Fujian Electric Power Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
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    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
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Abstract

The invention provides a terminal structure of a regional gradual change field limiting ring and a design method thereof, which set the initial value of each parameter of the terminal structure of the regional gradual change field limiting ring; based on the initial value, sequentially adjusting each parameter value, acquiring the electric field intensity between each field limiting ring and the active area main junction in real time, and when the acquired electric field intensities are equal and are all smaller than the critical breakdown electric field intensity, acquiring the optimal parameter value; the terminal structure of the field limiting ring with gradually changed areas is determined based on the optimal parameter values, the protection efficiency of the terminal structure of the field limiting ring in the preparation process of the power semiconductor device is greatly improved by adjusting the width of the field limiting ring in each area and the distance between every two adjacent field limiting rings, the breakdown voltage of the semiconductor power device is improved, and the reliability and the stability of the semiconductor power device are enhanced.

Description

Terminal structure of zoned gradual change field limiting ring and design method thereof
Technical Field
The invention relates to the technical field of semiconductors, in particular to a terminal structure of a zoned gradual change field limiting ring and a design method thereof.
Background
In recent years, silicon carbide materials have excellent properties such as a wide bandgap, a high critical breakdown field, and a high thermal conductivity, and thus are more advantageous in application environments such as high voltage, high temperature, and high power. However, when the silicon carbide device is subjected to reverse high voltage, an electric field concentration phenomenon inevitably occurs at the corner of the planar junction, so that the breakdown voltage of the device is far lower than the voltage resistance value of an ideal planar junction. In order to reduce this electric field concentration effect and increase the device breakdown voltage, a suitable termination structure must be introduced in the silicon carbide device design. Currently, commonly used termination structures include a field plate structure (FP), a junction termination extension structure (JTE), a field limiting ring structure (FLR), and the like. The field plate structure may cause serious reliability problems in high voltage applications because the field oxide layer is more prone to breakdown when the edge field is concentrated. JTE structures achieve good results in high voltage silicon carbide devices, but their termination protection efficiency is sensitive to junction doping concentration and requires multiple implants. In contrast, the field limiting ring terminal structure has a simple process, can be formed together with the active region, and is insensitive to doping concentration, so that the field limiting ring terminal structure is widely applied to high-voltage silicon carbide devices.
The existing field limiting ring terminal structure generally adopts a uniform ring spacing design, the design is simple, but the electric field distribution is uneven, the electric field distribution is often concentrated at the main junction of an active area or the last field limiting ring, the voltage born by the middle field limiting ring is small, and the terminal protection efficiency is low in the preparation process of an ultrahigh voltage device.
Disclosure of Invention
In order to overcome the defect of low terminal protection efficiency in the prior art, the invention provides a design method of a terminal structure of a zoned gradual change field limiting ring, which comprises the following steps:
setting initial values of parameters of a terminal structure of a regional gradual change field limiting ring;
based on the initial value, sequentially adjusting each parameter value, acquiring the electric field intensity between each field limiting ring and the active area main junction in real time, and when the acquired electric field intensities are equal and are all smaller than the critical breakdown electric field intensity, acquiring the optimal parameter value;
and determining the terminal structure of the regional gradual change field limiting ring based on the optimal parameter value.
The parameters comprise in the order of adjustment: the width gradient factor of each field limiting ring in the region, the distance gradient factor of adjacent field limiting rings in the region, the width of the field limiting ring closest to the active region main junction, the distance between the field limiting ring closest to the active region main junction and the active region main junction, the number of the regions and the number of the field limiting rings in the regions.
Adjusting the width gradient factor of each field limiting ring in the area, comprising:
determining the width characteristics of each field limiting ring in each area;
the width tapering factor of the field limiting rings is varied based on the width characteristics of the field limiting rings in each zone.
The width characteristic of each field limiting ring in each region is determined according to the following formula:
WN＝W1-ΔWN
in the formula, WNDenotes the width of the field limiting ring in the Nth region, Δ WNRepresenting a width gradient factor, W, of the field limiting ring in the Nth region1The width of the field limiting ring closest to the main junction of the active region.
Adjusting a distance gradient factor of adjacent field limiting rings in the region, comprising:
determining the spacing characteristics of each adjacent field limiting ring in each region;
and changing the distance gradient factor of the field limiting rings based on the distance characteristics of the adjacent field limiting rings in each area.
The spacing characteristic of each adjacent field limiting ring in each region is determined according to the following formula:
SN＝S1+ΔSN
in the formula, SNIs the spacing, Δ S, of adjacent field limiting rings in the Nth regionNIs the width gradient factor, S, of the field limiting ring in the Nth region1Is the distance between the field limiting ring closest to the main junction of the active region and the main junction of the active region.
The critical breakdown field strength is determined by the type of power semiconductor material.
On the other hand, the invention also provides a terminal structure of the zoned gradual change field limiting ring, which comprises a plurality of zones, wherein each zone comprises a plurality of field limiting rings, and each field limiting ring is manufactured based on the method;
the width of each field limiting ring in each area is equal, and the distance between adjacent field limiting rings in each area is equal.
The width of each field limiting ring in each region meets the following conditions:
WN＝W1-ΔWN
in the formula, WNDenotes the width of the field limiting ring in the Nth region, Δ WNRepresenting a width gradient factor, W, of the field limiting ring in the Nth region1The width of the field limiting ring closest to the main junction of the active region.
The spacing characteristic of each adjacent field limiting ring in each region is determined according to the following formula:
SN＝S1+ΔSN
in the formula, SNIs the spacing, Δ S, of adjacent field limiting rings in the Nth regionNIs the width gradient factor, S, of the field limiting ring in the Nth region1Is the distance between the field limiting ring closest to the main junction of the active region and the main junction of the active region.
The technical scheme provided by the invention has the following beneficial effects:
in the design method of the terminal structure of the regional gradual change field limiting ring, the initial values of all parameters of the terminal structure of the regional gradual change field limiting ring are set; based on the initial value, sequentially adjusting each parameter value, acquiring the electric field intensity between each field limiting ring and the active area main junction in real time, and when the acquired electric field intensities are equal and are all smaller than the critical breakdown electric field intensity, acquiring the optimal parameter value; determining a terminal structure of the regional gradual change field limiting ring based on the optimal parameter values, and greatly improving the protection efficiency of the terminal structure of the field limiting ring in the preparation process of the power semiconductor device by adjusting each parameter value of the terminal structure of the regional gradual change field limiting ring;
the invention adjusts the width of each field limiting ring by changing the width gradient factor of the field limiting ring, and adjusts the distance between each adjacent field limiting ring by changing the distance gradient factor of the field limiting ring, thereby not only refining and optimizing the field limiting ring close to the main junction of the active area, relieving the electric field concentration effect at the edge of the main junction of the active area, but also realizing quick and effective adjustment aiming at the condition that the number of the field limiting rings of the power semiconductor device is increased;
the field limiting ring terminal structure is divided into a plurality of areas, the width of each field limiting ring in each area is equal, the distance between every two adjacent field limiting rings in each area is equal, the electric field is uniformly distributed, the electric field is prevented from being concentrated at the main junction of the active area or the last field limiting ring, the breakdown voltage of the semiconductor power device is greatly improved, and the reliability and the stability of the semiconductor power device are enhanced;
the invention does not need to reduce the uniform ring spacing and increase the number of rings to improve the breakdown voltage of the semiconductor power device, so the technical scheme provided by the invention can reduce the manufacturing cost of the semiconductor power device.
Drawings
Fig. 1 is a flowchart of a method for designing a terminal structure of a regional gradual change field limiting ring according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings.
Example 1
Embodiment 1 of the present invention provides a method for designing a zoned gradient field limiting ring terminal structure, where a specific flowchart is shown in fig. 1, and the specific process is as follows:
s101: setting initial values of parameters of a terminal structure of a regional gradual change field limiting ring;
s102: based on the initial value, sequentially adjusting each parameter value, acquiring the electric field intensity between each field limiting ring and the active area main junction in real time, and when the acquired electric field intensities are equal and are all smaller than the critical breakdown electric field intensity, acquiring the optimal parameter value;
s103: and determining the terminal structure of the regional gradual change field limiting ring based on the optimal parameter value.
When the reverse voltage of the field limiting ring terminal structure is increased to a certain value, a depletion region on the main junction of the active region reaches the field limiting ring, a part of voltage is shared by the field limiting ring, the electric field of the main junction of the active region is limited in a critical breakdown electric field, and the breakdown voltage of the semiconductor power device is improved. The number, the ring width, the ring spacing and the like of the field limiting rings are key parameters of the terminal structure design of the field limiting rings, and the optimal terminal design is that the electric field is uniformly shared between the main node of the active area and the field limiting rings. Particularly, for the field limiting ring terminal structure of the high-voltage semiconductor power device, the number of required field limiting rings is obviously increased, the design and optimization of the key parameters of the field limiting rings are very complicated, and the optimal terminal design with uniform electric field distribution and high terminal protection efficiency is difficult to obtain. Therefore, the parameters of the terminal structure of the regional gradual change field limiting ring determined by the invention comprise the width gradual change factor of each field limiting ring in the region, the distance gradual change factor of the adjacent field limiting rings in the region, the width of the field limiting ring closest to the main node of the active region, the distance between the field limiting ring closest to the main node of the active region and the main node of the active region, the number of the regions and the number of the field limiting rings in the region.
The number of the regions is an integer larger than 1, the number of the field limiting rings in each region is an integer larger than 1, and the number of the field limiting rings is determined by the withstand voltage level of the semiconductor power device. In the embodiment of the invention, the initial value of the number of the field limiting rings is set to be 50, the initial value of the number of the areas is set to be 2, the initial value of the distance between the field limiting ring nearest to the main node of the active area and the main node of the active area is 2 microns, and the width of the field limiting ring nearest to the main node of the active area is 5 microns according to the requirement of the breakdown voltage of a semiconductor power device of 6.5 kV.
Adjusting the width gradient factor of each field limiting ring in the area, comprising:
determining the width characteristics of each field limiting ring in each area;
the width tapering factor of the field limiting rings is varied based on the width characteristics of the field limiting rings in each zone.
The width characteristics of each field limiting ring in each zone are determined according to the following formula:
WN＝W1-ΔWN
in the formula, WNDenotes the width of the field limiting ring in the Nth region, Δ WNRepresenting the width gradient factor, AW, of the field limiting ring in the Nth regionN≥0，W1The width of the field limiting ring closest to the main junction of the active region.
Adjusting a distance gradient factor of adjacent field limiting rings in the region, comprising:
determining the spacing characteristics of each adjacent field limiting ring in each region;
and changing the distance gradient factor of the field limiting rings based on the distance characteristics of the adjacent field limiting rings in each area.
The spacing characteristics of each adjacent field limiting ring in each zone are determined according to the following formula:
SN＝S1+ΔSN
in the formula, SNIs the spacing, Δ S, of adjacent field limiting rings in the Nth regionNFor field-limiting rings in the Nth zoneWidth gradient factor, Δ SN≥0，S1Is the distance between the field limiting ring closest to the main junction of the active region and the main junction of the active region.
The critical breakdown electric field strength is determined by the type of the power semiconductor material, and in the embodiment of the invention, the critical breakdown electric field strength is 3 MV/cm.
Adjusting the number of field limiting rings in the region, including:
and adjusting the number of the field limiting rings in each area on the basis of the principle that the widths of the field limiting rings in each area are equal and the distances between the adjacent field limiting rings in each area are equal.
In embodiment 1 of the present invention, the width gradient factor of each field limiting ring in the area is adjusted based on the set initial value, if the width gradient factor of each field limiting ring in the area is adjusted, the requirement that the electric field strength is equal and is all smaller than the critical breakdown electric field strength is met, the width gradient factor of each field limiting ring in the optimal area can be obtained, then the width gradient factor of each field limiting ring in the optimal area and the initial value are combined, and the terminal structure of the divided-area gradient field limiting ring can be obtained, otherwise (i.e., after the width gradient factor of each field limiting ring in the area is adjusted, the requirement that the electric field strength is equal and is all smaller than the critical breakdown electric field strength is not met) the distance gradient factor of the adjacent field limiting ring in the area is adjusted; if the space gradient factors of the adjacent field limiting rings in the area are adjusted, the electric field intensity is equal and is smaller than the critical breakdown electric field intensity, the optimum space gradient factor of the adjacent field limiting rings in the area can be obtained, then the terminal structure of the zone gradient field limiting rings can be obtained based on the optimum space gradient factor of the adjacent field limiting rings in the area, otherwise (namely after the space gradient factors of the adjacent field limiting rings in the area are adjusted, the electric field intensity is not equal and is smaller than the critical breakdown electric field intensity), the width of the field limiting ring closest to the main junction of the active area is adjusted; if the field limiting ring closest to the main node of the active area is adjusted, the electric field intensity is equal and smaller than the critical breakdown electric field intensity, the optimal width of the field limiting ring closest to the main node of the active area can be obtained, then the optimal width of the field limiting ring closest to the main node of the active area is combined, the terminal structure of the field limiting ring with the gradual change in the sub-area can be obtained, and otherwise (namely, the field limiting ring closest to the main node of the active area is adjusted, the electric field intensity is not equal and smaller than the critical breakdown electric field intensity), the distance between the field limiting ring closest to the main node of the active area and the main node of the active area is adjusted; if the electric field intensity is equal and smaller than the critical breakdown electric field intensity after the distance between the field limiting ring closest to the active area main junction and the active area main junction is adjusted, the optimal distance between the field limiting ring closest to the active area main junction and the active area main junction can be obtained, and then the terminal structure of the field limiting ring with gradually changed regions is obtained based on the optimal distance between the field limiting ring closest to the active area main junction and the active area main junction, otherwise (the electric field intensity is not equal and smaller than the critical breakdown electric field intensity after the distance between the field limiting ring closest to the active area main junction and the active area main junction is adjusted); if the number of the regions is adjusted, the electric field intensity is equal and is smaller than the critical breakdown electric field intensity, the optimal number of the regions can be obtained, and the terminal structure of the regional gradual change field limiting ring is obtained based on the optimal number of the regions, otherwise (the electric field intensity is not equal and is smaller than the critical breakdown electric field intensity after the number of the regions is adjusted); if the number of the field limiting rings in the region is adjusted, the electric field intensity is equal and is smaller than the critical breakdown electric field intensity, the optimal number of the field limiting rings in the region can be obtained, and then the terminal structure of the regional gradual change field limiting rings is obtained based on the optimal number of the field limiting rings in the region. Example 2
Based on the same inventive concept, embodiment 2 of the present invention further provides a terminal structure of a zoned gradual change field limiting ring, including a plurality of zones, each zone including a plurality of field limiting rings, each field limiting ring being manufactured based on the method provided in embodiment 1 of the present invention;
the width of each field limiting ring in each area is equal, and the distance between adjacent field limiting rings in each area is equal.
The width of each field limiting ring in each area satisfies:
WN＝W1-ΔWN
in the formula, WNDenotes the width of the field limiting ring in the Nth region, Δ WNRepresenting a width gradient factor, W, of the field limiting ring in the Nth region1The width of the field limiting ring closest to the main junction of the active region.
The spacing characteristics of each adjacent field limiting ring in each zone are determined according to the following formula:
SN＝S1+ΔSN
in the formula, SNIs the spacing, Δ S, of adjacent field limiting rings in the Nth regionNIs the width gradient factor, S, of the field limiting ring in the Nth region1Is the distance between the field limiting ring closest to the main junction of the active region and the main junction of the active region.
For convenience of description, each part of the above-described apparatus is separately described as being functionally divided into various modules or units. Of course, the functionality of the various modules or units may be implemented in the same one or more pieces of software or hardware when implementing the present application.
As will be appreciated by one skilled in the art, embodiments of the present application may be provided as a method, system, or computer program product. Accordingly, the present application may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, the present application may take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, and the like) having computer-usable program code embodied therein.
The present application is described with reference to flowchart illustrations and/or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of the application. It will be understood that each flow and/or block of the flow diagrams and/or block diagrams, and combinations of flows and/or blocks in the flow diagrams and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
Finally, it should be noted that: the above embodiments are only intended to illustrate the technical solution of the present invention and not to limit the same, and a person of ordinary skill in the art can make modifications or equivalent substitutions to the specific embodiments of the present invention with reference to the above embodiments, and any modifications or equivalent substitutions which do not depart from the spirit and scope of the present invention are within the protection scope of the present invention as claimed in the appended claims.

Claims (11)

1. A design method of a terminal structure of a regionally graded field limiting ring is characterized by comprising the following steps:
setting initial values of parameters of a terminal structure of a regional gradual change field limiting ring;
based on the initial value, sequentially adjusting each parameter value, acquiring the electric field intensity between each field limiting ring and the active area main junction in real time, and when the acquired electric field intensities are equal and are all smaller than the critical breakdown electric field intensity, acquiring the optimal parameter value;
and determining the terminal structure of the regional gradual change field limiting ring based on the optimal parameter value.
2. The method according to claim 1, wherein the parameters include, in order of adjustment: the width gradient factor of each field limiting ring in the region, the distance gradient factor of adjacent field limiting rings in the region, the width of the field limiting ring closest to the active region main junction, the distance between the field limiting ring closest to the active region main junction and the active region main junction, the number of the regions and the number of the field limiting rings in the regions.
3. The method for designing a terminal structure of a regional gradual change field limiting ring according to claim 2, wherein adjusting the width gradual change factor of each field limiting ring in the region includes:
determining the width characteristics of each field limiting ring in each area;
and adjusting the width gradient factor of the field limiting rings based on the width characteristics of the field limiting rings in each region.
4. The method according to claim 3, wherein the width characteristic of each field limiting ring in each region is determined according to the following formula:
WN＝W1-ΔWN
in the formula, WNDenotes the width of the field limiting ring in the Nth region, Δ WNRepresenting a width gradient factor, W, of the field limiting ring in the Nth region1The width of the field limiting ring closest to the main junction of the active region.
5. The method for designing a terminal structure of a zoned graded field limiting ring according to claim 4, wherein adjusting a gradual change factor of a distance between adjacent field limiting rings in the zone includes:
determining the spacing characteristics of each adjacent field limiting ring in each region;
and adjusting the distance gradient factor of the field limiting rings based on the distance characteristics of the adjacent field limiting rings in each area.
6. The method for designing a terminal structure of a regional gradual change field limiting ring according to claim 5, wherein the distance characteristic of each adjacent field limiting ring in each region is determined according to the following formula:
SN＝S1+ΔSN
in the formula, SNIs the spacing, Δ S, of adjacent field limiting rings in the Nth regionNIs the width gradient factor, S, of the field limiting ring in the Nth region1Is the distance between the field limiting ring closest to the main junction of the active region and the main junction of the active region.
7. The method for designing a terminal structure of a regional gradual change field limiting ring according to claim 1, wherein the adjusting the number of field limiting rings in a region comprises:
and adjusting the number of the field limiting rings in each area on the basis of the principle that the widths of the field limiting rings in each area are equal and the distances between the adjacent field limiting rings in each area are equal.
8. The method according to claim 1, wherein the critical breakdown field strength is determined by the type of the power semiconductor material.
9. A zoned graded field limiting ring termination structure comprising a plurality of zones, each zone comprising a plurality of field limiting rings, each field limiting ring fabricated according to the method of any of claims 1 to 8.
10. The terminal structure of a split-zone gradual change field limiting ring according to claim 9, wherein the width of each field limiting ring in each zone satisfies:
WN＝W1-ΔWN
in the formula, WNDenotes the width of the field limiting ring in the Nth region, Δ WNRepresenting a width gradient factor, W, of the field limiting ring in the Nth region1The width of the field limiting ring closest to the main junction of the active region.
11. The terminal structure of a zoned graded field limiting ring according to claim 9, wherein the spacing characteristic of each adjacent field limiting ring in each zone is determined according to the following formula:
SN＝S1+ΔSN
in the formula, SNIs the spacing, Δ S, of adjacent field limiting rings in the Nth regionNIs the width gradient factor, S, of the field limiting ring in the Nth region1Is the distance between the field limiting ring closest to the main junction of the active region and the main junction of the active region.
CN202010386415.2A 2020-05-09 2020-05-09 Terminal structure of zoned gradual change field limiting ring and design method thereof Pending CN113629131A (en)

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