CN113612109B - Semiconductor laser device for realizing electro-optical latching function and information loading/latching method - Google Patents
Semiconductor laser device for realizing electro-optical latching function and information loading/latching method Download PDFInfo
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- CN113612109B CN113612109B CN202110869623.2A CN202110869623A CN113612109B CN 113612109 B CN113612109 B CN 113612109B CN 202110869623 A CN202110869623 A CN 202110869623A CN 113612109 B CN113612109 B CN 113612109B
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- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
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- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
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Abstract
The invention discloses a semiconductor laser for realizing an electro-optical latch function and an information loading/latching method, which belong to the field of semiconductor devices and comprise the following steps: the device comprises a device area and an isolation area, wherein the device area comprises a first distributed feedback laser and a second distributed feedback laser which form a resonant cavity, each step-by-step feedback laser comprises an electrode, a grating layer and an active area, and the active area is of a multi-quantum well structure; the PI curve of the laser shows hysteresis: the injected current is different from small to large and from large to small, the output light state of the intermediate current between the two jump points is related to the previous state, if the amplitude of the input signal is reduced, the temporary latching of the output state of the laser can be realized, namely, the laser can be used as an electro-optical latch, the temporary caching of information in the process of converting the information from electricity to light can also be realized, and the manufacturing process is simple.
Description
Technical Field
The invention belongs to the field of semiconductor devices, and particularly relates to a semiconductor laser for realizing an electro-optical latch function and an information loading/latching method.
Background
The semiconductor laser can convert an electric signal into an optical signal, improves the operation speed, is an important device for electro-optical conversion, particularly a direct modulation laser therein, has the advantages of low cost, small volume, batch production and the like, and is widely applied. With the increasing demand for calculation processing speed, information processing is developing towards optical conversion, but the existing laser for electro-optical conversion can only realize information loading, that is, output changes along with input change, other logic functions which can be realized in the field of electro-optical information processing and are similar to latching and triggering cannot be realized temporarily, and if the functions are realized, the electric signals need to be processed before being connected into the laser, so that the calculation speed is influenced, and meanwhile, the cost is increased. Therefore, the realization of logic functions such as latching of the semiconductor electro-optical conversion device is a key and difficult point of research, and the realization of the logic functions is also a little researched at present and has important practical significance.
Disclosure of Invention
Aiming at the defects and the improvement requirements of the prior art, the invention provides the semiconductor laser and the information loading/latching method for realizing the electro-optical latching function, the hysteresis phenomenon shown by the nonlinear PI curve can be used as a latch, the light emitting state of the laser can be latched by reducing the amplitude of the driving signal, and the corresponding logic operation is realized.
In order to achieve the above object, according to an aspect of the present invention, a semiconductor laser for implementing an electro-optical latch function is provided, including a device region and an isolation region, where the device region includes two distributed feedback lasers DFB, each distributed feedback laser region includes, from top to bottom, an electrode, a grating layer, and an active region, and the active region is a multiple quantum well structure; the isolation region mainly realizes an electric isolation function and realizes that two DFBs are respectively electrified.
Further, the injection current I 1 Injecting an electrode of the first distributed feedback laser into the first distributed feedback laser to drive the first distributed feedback laser to emit light, and outputting the generated light by an antireflection film surface of the second partial feedback laser after the generated light is transmitted back and forth and subjected to resonance amplification in a laser cavity formed by the first distributed feedback laser and the second distributed feedback laser; injection current I 2 The light is injected into the second distributed feedback laser to be kept unchanged and is mainly responsible for adjusting the phase of the light emitted from the book in the laser cavity. Obtaining output power and injection current I 1 PI curve of the relationship (c).
Still further, the PI curve of the laser has a hysteresis phenomenon: retention I 2 Fixed, injected current I 1 Optical power trip point I when changing from small to large a Optical power trip point I when the ratio changes from large to small b Large when the injection current is at I a And I b In between, whether the laser emits light is related to the light emitting state at the previous time, if the previous state is the light emitting state, the light is emitted, otherwise, the light is not emitted.
According to another aspect of the present invention, there is provided an information loading method for a semiconductor laser according to the first aspect of the present invention, wherein the static characteristics of the laser are used as an electro-optical latch application: retention of I 2 Fixed, injected current I 1 Is biased at I a And I b In the middle, the amplitude of the driving signal is larger than
Therefore, information can be loaded normally, and the output light state changes along with the change of the input signal.
According to still another aspect of the present invention, there is provided information based on the semiconductor laser according to the first aspect of the present inventionIn the latch method, if the state of the laser in a certain time period is temporarily latched, the amplitude of the driving signal is only required to be reduced at the time point, and the laser keeps the light emitting state or the light non-emitting state unchanged until the amplitude of the driving signal is larger than that of the driving signal again
And (5) normal modulation.
Generally, by the above technical solution conceived by the present invention, the following beneficial effects can be obtained: by utilizing the nonlinear static hysteresis characteristic of the double DFB laser, the electro-optical latch function can be realized: under normal conditions, the output of the laser changes along with the input, information can be loaded normally, the amplitude of the driving signal is reduced at a certain moment, the laser can keep the light emitting state of the previous time period, and the effects of latching and temporary buffering are achieved. The laser provided by the invention can realize the function of the latch, and the manufacturing method is simpler and has wide application prospect.
Drawings
Fig. 1 is a schematic structural diagram of a semiconductor laser provided by the present invention;
fig. 2 is an actually measured static PI curve of the semiconductor laser according to the present invention;
fig. 3 is a schematic diagram of a semiconductor laser device implementing an electro-optical latch function according to an embodiment of the present invention;
fig. 4 is a schematic diagram of a semiconductor laser implementing an electro-optical latch function according to another embodiment of the present invention;
the same reference numbers will be used throughout the drawings to refer to the same or like elements or structures, wherein:
1-1 is a first distributed feedback laser, 1-2 is a second distributed feedback laser, 2 is an isolation region, 10 is an electrode, 11 is a grating layer, 12 is an active region, 13 is a signal integrating device, 14 is an attenuator, and 15 is a not gate.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. In addition, the technical features involved in the respective embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
In the present application, the terms "first," "second," and the like (if any) in the description and the drawings are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order.
The invention provides a semiconductor laser device for realizing an electro-optical latch function, and the semiconductor laser device for realizing the electro-optical latch function in the embodiment is described in detail by combining the attached drawings of the specification.
As shown in fig. 1, the semiconductor laser device implementing the electro-optical latch function includes a distributed feedback laser device region and an isolation region 2, the device region includes a first distributed feedback laser device region 1-1 and a second distributed feedback laser device 1-2, a high reflection film is plated on the outer side of the first distributed feedback laser device 1-1, an anti-reflection film is plated on the outer side of the second distributed feedback laser device 1-2, the first distributed feedback laser device region 1-1 and the second distributed feedback laser device 1-2 form a resonant cavity, each distributed feedback laser device region includes an electrode 10, a grating layer 11, and an active region 12 from top to bottom, and the active region is a multiple quantum well structure; the isolation region 2 mainly realizes an electrical isolation function, and realizes that two DFBs are respectively electrified.
In a distributed feedback semiconductor laser, the injection current I 1 Injecting the light into the first distributed feedback laser by an electrode 10 of the first distributed feedback laser to provide gain and drive the first distributed feedback laser to emit light; injection current I 2 Injecting the laser into a second distributed feedback laser to keep constant, and mainly adjusting the phase, wherein the PI curve is output power and injection current I 1 The relationship of (1);
the PI curve as shown in fig. 2 has hysteresis: retention I 2 Fixed, injected current I 1 Optical power trip point I when changing from small to large a Optical power trip point I when the ratio changes from large to small b Large when the injection current is at I a And I b In time between, whether the laser is outThe light is related to the light emitting state at the previous time, if the previous state is the light emitting state, the light is emitted, otherwise, the light is not emitted;
the static characteristics as shown in fig. 2 can be used to implement the electro-optical latching function: retention I 2 Fixed, injected current I 1 Is biased at I a And I b In the middle, i.e.
Where the amplitude of the drive signal is greater than
Therefore, information can be loaded normally, and the output light state changes along with the change of the input signal; if the state of the laser in a certain time period is required to be temporarily latched, the amplitude of the driving signal is only required to be reduced at the time point, and the laser keeps the light emitting state or the light non-emitting state unchanged until the amplitude of the driving signal is larger than that of the driving signal again
And (5) normal modulation.
According to the embodiment of the invention, as shown in fig. 3, an electro-optical latch function can be realized by using the hysteresis characteristic exhibited by the static PI curve of the laser: retention of I 2 Fixed, driving signal I 1 Injected into the first distributed feedback laser region 1-1 via the attenuator 14 1 The bias point is set at a And I b In the middle, i.e.
Where the modulation amplitude of the normal drive signal is greater than
At the moment, the output of the laser changes along with the change of the input, information can be normally loaded, the electric signal is converted into an optical signal, when the injected electric signal is 1, the output is 0, and when the injected electric signal is 0, the output is 1; when the control signal is input into the attenuator, the signal amplitude is attenuated, and the modulation amplitude of the driving signal is smaller than
According to the hysteresis phenomenon shown in fig. 2, the light emitting state of the laser will remain unchanged until the control signal disappears, and then the signal returns to normal, i.e. the signal is latched.
According to another embodiment of the present invention, as shown in fig. 4, an electro-optical latch function can be realized by using the hysteresis characteristic exhibited by the static PI curve of the laser: retention I 2 Fixed, drive signal I 1 Dividing into two paths, directly inputting one path of signal into the first distributed feedback laser 1-1 as a driving signal, inputting one path of signal into the laser through a NOT gate to ensure the time synchronization of the two paths of signals, wherein the control signal is a starting signal of the NOT gate, and when the control signal is not inputted, the two paths of signals are in the same phase and have amplitude larger than that of the control signal
The output of the laser changes along with the change of the input, information can be loaded normally, an electric signal is converted into an optical signal, when the injected electric signal is 1, the output is 0, and when the injected electric signal is 0, the output is 1; when the control signal is switched in, the NOT gate is started, the two paths of signals are in opposite phase, and the amplitude of the driving signal is less than that of the driving signal
According to the hysteresis phenomenon shown in fig. 2, the light emitting state of the laser will remain unchanged until the control signal disappears, and then the signal returns to normal, i.e. the signal is latched.
The nonlinear static hysteresis characteristic of the double DFB laser is utilized, the electro-optical latch function can be realized, the amplitude of the driving signal is reduced at a certain moment, the laser can keep the light emitting state at the moment, the latch and temporary buffer effects are realized, the electro-optical latch function can also be realized, the realization on an electric domain is not needed, the manufacturing method is simple, and the wide application prospect is realized.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (10)
1. The information loading method of the semiconductor laser based on the electro-optical latching function is achieved, the semiconductor laser comprises a device area and an isolation area (2), the device area comprises a first distributed feedback laser (1-1) and a second distributed feedback laser (1-2), the first distributed feedback laser (1-1) and the second distributed feedback laser (1-2) form a resonant cavity, and each distributed feedback laser comprises an electrode (10), a grating layer (11) and an active area (12) from top to bottom; the isolation region (2) is used for realizing the electrical isolation of the first distributed feedback laser (1-1) and the second distributed feedback laser (1-2) and realizing the respective electrification of the two distributed feedback lasers, and the first injection current I of the first distributed feedback laser (1-1) 1 The first distributed feedback laser (1-1) is driven to emit light; a second injection current I of a second distributed feedback laser (1-2) 2 For adjusting the phase of the light transmitted in the cavity; characterised by maintaining the second injection current I 2 Fixed, first injection current I 1 Is biased at I a And I b The amplitude of the drive signal loaded on the first injection current is larger than that
The driving laser realizes information loading, and the output light state changes along with the change of the driving signal.
2. An information loading method according to claim 1, wherein said active region (12) is a multiple quantum well structure.
3. The information loading method according to claim 1, wherein the outside of the first distributed feedback laser (1-1) is coated with a high reflection film, and the outside of the second distributed feedback laser (1-2) is coated with an antireflection film.
4. The information loading method of claim 1, wherein holding I 2 Fixation of I 1 When the laser changes from small to large, the output light power of the laser jumps to a point I a Ratio I 1 Optical power trip point I when changing from large to small b Is large.
5. The information loading method of claim 4, wherein when I is 1 At I a And I b In between, the light-emitting state of the laser is the same as the light-emitting state of the laser at the previous time.
6. The information latching method based on the semiconductor laser for realizing the electro-optical latching function comprises a device area and an isolation area (2), wherein the device area comprises a first distributed feedback laser (1-1) and a second distributed feedback laser (1-2), the first distributed feedback laser (1-1) and the second distributed feedback laser (1-2) form a resonant cavity, and each distributed feedback laser comprises an electrode (10), a grating layer (11) and an active area (12) from top to bottom; the isolation region (2) is used for realizing the electrical isolation of the first distributed feedback laser (1-1) and the second distributed feedback laser (1-2) and realizing the respective electrification of the two distributed feedback lasers, and the first injection current I of the first distributed feedback laser (1-1) 1 The first distributed feedback laser (1-1) is driven to emit light; a second injection current I of a second distributed feedback laser (1-2) 2 For adjusting the phase of the light transmitted in the cavity; characterised by maintaining the second injection current I 2 Fixed, first injection current I 1 Is biased at I a And I b The amplitude of the drive signal loaded on the first injection current is first larger than that of the drive signal loaded on the second injection current
Then reduced to not more than
The laser keeps the light emitting state at the previous moment, and information latching is achieved.
7. The information latching method according to claim 6, wherein the active region (12) is a multiple quantum well structure.
8. The information latching method according to claim 6, wherein the first distributed feedback laser (1-1) is coated with a high reflection film on the outside, and the second distributed feedback laser (1-2) is coated with an antireflection film on the outside.
9. The information latching method according to claim 6, wherein the holding I 2 Fixation of I 1 When the laser changes from small to large, the output light power of the laser jumps to a point I a Ratio I 1 Optical power trip point I when changing from large to small b Is large.
10. The information latching method according to claim 9, wherein when I is 1 Is at I a And I b In between, the light-emitting state of the laser is the same as the light-emitting state of the laser at the previous time.
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| US4748630A (en) * | 1985-01-17 | 1988-05-31 | Nec Corporation | Optical memory device comprising a semiconductor laser having bistability and two injection current sources for individually controlling the bistability |
| JP2793381B2 (en) * | 1991-06-24 | 1998-09-03 | 日本電信電話株式会社 | Optical register memory |
| CN102520559A (en) * | 2011-12-20 | 2012-06-27 | 天津大学 | Method for generating arbitrary waveforms on basis of optical injection locking |
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