CN113612033A - Resistance type high-frequency radiation absorber structure based on frequency selective surface theory and radiation suppression device thereof - Google Patents
Resistance type high-frequency radiation absorber structure based on frequency selective surface theory and radiation suppression device thereof Download PDFInfo
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- CN113612033A CN113612033A CN202110868245.6A CN202110868245A CN113612033A CN 113612033 A CN113612033 A CN 113612033A CN 202110868245 A CN202110868245 A CN 202110868245A CN 113612033 A CN113612033 A CN 113612033A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
Abstract
The invention aims to provide a resistance type high-frequency radiation absorber structure based on a frequency selective surface theory and a radiation suppression device thereof, wherein the absorber structure can effectively suppress electromagnetic radiation of an absorber working frequency band in packaging, so that the problem that the electromagnetic radiation in chip packaging exceeds the standard is effectively solved. The absorber comprises absorber units which are periodically arranged, wherein each absorber unit sequentially comprises a bottom metal layer, a middle dielectric layer and an upper pattern layer from bottom to top, the upper pattern layer consists of metal patterns and chip resistors, and the metal patterns and the chip resistors form a complete closed circuit.
Description
Technical Field
The invention relates to the field of electromagnetic compatibility and frequency selective surfaces, in particular to a resistance type high-frequency radiation absorber structure based on a frequency selective surface theory and a radiation suppression device thereof.
Background
The chip is the "brain" in the current communication system, but nowadays, the electromagnetic radiation interference problem still faces. On one hand, the electromagnetic stray signals with complex chips can cause interference to other surrounding functional modules, on the other hand, the strong radiation of the electromagnetic stray signals can restrict the overall performance improvement of the equipment, and the breakdown of the equipment can be caused in severe cases. In the traditional design, the radiation inhibition effect is usually achieved by applying a wave-absorbing material below a radiator, but the wave-absorbing capability of the wave-absorbing material is limited, so that the actual requirements in the current application cannot be met. Therefore, in the face of various complicated electromagnetic stray signals, it is urgently needed to further improve the wave absorbing performance of the absorber.
A Frequency Selective Surface (Frequency Selective Surface) is a periodic two-dimensional planar structure in which resonant cells are arranged in a specific pattern. The frequency selective surface and the electromagnetic wave can show obvious band-pass or band-stop filtering characteristics when interacting with each other, and can effectively control the transmission and reflection of the electromagnetic wave. Thanks to this structural characteristic, the frequency selective surface has found wide applications in the fields of spatial filters, radomes, etc. Correspondingly, the band-stop frequency selective surface is applied to the corresponding frequency band, namely, the band-stop frequency selective surface can be used as a wave absorber of the corresponding frequency band, namely, a frequency selective surface wave absorber. The frequency selective surface wave absorber has a wide absorption bandwidth as a structural absorber, and meanwhile, the wave absorption frequency band can be flexibly designed by setting the shape and parameters of the frequency selective surface, so that the problem of electromagnetic radiation in the chip packaging system can be effectively solved, but the existing research on the structure of the high-resistance high-frequency radiation absorber is not much.
Disclosure of Invention
In view of the above, the present invention aims to provide a resistive high-frequency radiation absorber structure based on a frequency selective surface theory, which can effectively suppress electromagnetic radiation in the working frequency band of the absorber in the package, thereby effectively solving the problem of overproof electromagnetic radiation in the chip package.
In order to achieve the purpose, the invention provides the following technical scheme:
the utility model provides a resistance type high frequency radiation absorber structure based on frequency selective surface theory, is including being the absorber unit of periodic arrangement, and every absorber unit is bottom metal layer, middle dielectric layer and upper pattern layer from the bottom up in proper order, and upper pattern layer comprises metal pattern and chip resistor, and metal pattern and chip resistor constitute complete closed circuit.
Compared with the prior art, the invention has the beneficial effects that:
the invention can effectively reduce the electromagnetic radiation in the working frequency band, and has the characteristics of small structure and thin thickness, so that the excellent radiation inhibition effect can be realized without occupying excessive space, and the invention has more flexible and wide application in different packages; and because the electromagnetic radiation suppression chip has the characteristics of high working frequency band and wide frequency band, the electromagnetic radiation suppression chip is particularly suitable for suppressing the electromagnetic radiation of a broadband near a 20-30GHz frequency band in chip packaging, and the electromagnetic radiation in the working frequency band of related electronic products is effectively suppressed on the premise of not influencing the heat dissipation and the performance of integrated circuits, thereby preventing the electromagnetic radiation from interfering other functional modules in the chip packaging, and further enabling the related electronic products to meet the standards of the electromagnetic interference.
As an improvement, the bottom metal layer is a flat square layer made of metal and has a thickness of 0.035 mm.
As an improvement, the middle dielectric layer is a flat square layer and is made of FR 4.
As a modification, the thickness of the metal pattern is 0.035 mm.
As an improvement, the four chip resistors are respectively located in the centers of the four metal pattern gaps and connected with the metal patterns on the two sides, and the resistance values are both 160 Ω.
As an improvement, the radiation suppression device of the resistance type high-frequency radiation absorber structure based on the frequency selective surface theory comprises a printed circuit board and an absorber.
Compared with the prior art, the invention has the beneficial effects that:
the invention is suitable for radiation inhibition in packaging of chips, printed circuit boards and the like, particularly has obvious inhibition effect on electromagnetic radiation of high frequency band, and can change the effective working frequency band by adjusting related design parameters, thereby enlarging the application range.
Drawings
FIG. 1 is a three-dimensional schematic view of the structural elements of the absorber of the present invention;
FIG. 2 is a schematic view of the structure of an upper pattern layer of the absorber structural unit according to the present invention;
FIG. 3 is a schematic diagram of the absorber unit structure and parameters of the present invention;
FIG. 4 is a reflection coefficient graph of the absorber structure unit according to the present invention under TE wave incidence with incidence angles of 0 °, 15 °, 30 °, and 45 °, respectively;
FIG. 5 is a reflection coefficient curve diagram of the absorber structure unit according to the present invention under the incidence of TM waves with incidence angles of 0 °, 15 °, 30 °, and 45 °, respectively;
FIG. 6 is a reflection coefficient curve diagram of TE wave vertical incidence under different parameters h for the absorber structure unit of the present invention:
FIG. 7 is a reflection coefficient curve diagram of TE wave vertical incidence of the absorber structure unit of the present invention under different parameters s:
FIG. 8 is a schematic diagram of a chip package model;
FIG. 9 is a top view of the wave absorbing material/absorber application area;
FIG. 10 is a front view of a simulation application in a chip package simulation model using the absorber structural elements;
FIG. 11 is a simulation comparison graph of radiation suppression applied in a chip package simulation model using the absorber unit structure and a certain commercial wave-absorbing material;
shown in the figure: (1) the chip comprises a bottom metal layer, (2) an intermediate dielectric layer, (3) an upper pattern layer, (4) a metal pattern, (5) a chip resistor, (6) a radiator, (7) a wave-absorbing material, (8) a chip area, (9) a PCB bottom plate, (10) a radiator bottom plate in a simulation chip packaging model, (11) an absorber attaching area in the simulation chip packaging model, (12) a metal heightening layer, (13) a chip structure in the simulation model, (14) a simulation radiation source, and (15) a simulation chip packaging model PCB bottom plate.
Detailed Description
The invention is described in further detail below:
with specific reference to fig. 1-11:
the utility model provides a resistance type high frequency radiation absorber structure based on frequency selective surface theory, including being the absorber unit of periodic arrangement, every absorber unit from the bottom up is bottom metal level 1, middle dielectric layer 2 and upper pattern layer 3 in proper order, upper pattern layer 3 comprises metallic pattern 5 and chip resistor 6, metallic pattern 5 constitutes complete closed circuit with chip resistor 6, metallic pattern 5 is the metal square ring that has four breachs, four chip resistor 6 are located the central authorities of four breachs, and metallic pattern 5 constitutes complete closed annular with chip resistor 6 is whole. The invention can effectively reduce the electromagnetic radiation in the working frequency band, and has the characteristics of small structure and thin thickness, so that the excellent radiation inhibition effect can be realized without occupying excessive space, and the invention has more flexible and wide application in different packages; and because the electromagnetic radiation suppression chip has the characteristics of high working frequency band and wide frequency band, the electromagnetic radiation suppression chip is particularly suitable for suppressing the electromagnetic radiation of a broadband near a 20-30GHz frequency band in chip packaging, and the electromagnetic radiation in the working frequency band of related electronic products is effectively suppressed on the premise of not influencing the heat dissipation and the performance of integrated circuits, thereby preventing the electromagnetic radiation from interfering other functional modules in the chip packaging, and further enabling the related electronic products to meet the standards of the electromagnetic interference.
The metal pattern 5 and the chip resistor 6 can form a distribution structure of triangle, rectangle, trapezoid, circle and the like.
The invention relates to a loaded lumped resistance type absorber, namely, a lumped resistance is welded in a metal pattern 5 layer of the absorber in a patch mode, after electromagnetic waves are incident on the absorber, induction current is formed on a metal structure, the current flows through a resistor, the resistor generates heat, the energy of a radiation field is converted into heat energy and is lost, and the radiation is specifically reflected to be absorbed and attenuated.
The meaning of the parameters in the figure is: the unit period of the P-absorber, the thickness of the h-middle dielectric layer 2, the distance from the s-metal square ring to the unit edge, the width of the w-metal square ring, the width of the lr-metal square ring gap and the resistance values of the four resistors are all 160 omega.
The working intermediate frequency band of the absorber is in the range of 25Ghz, and when a typical absorption peak is near 22Ghz, the parameter values are as follows: p is 2mm, h is 1.2mm, s is 0.2mm, w is 0.3mm, lr is 0.3mm, and the working frequency range of the absorber can be changed by changing parameter s, so as to meet the wave absorbing requirements of different frequency ranges.
The principle is as follows:
defining the reflectivity as R ═ S11|2The transmittance is T ═ S21|2Then, for the structure of the invention, the metal plate is used as the bottom layer (| S)21|20), the wave absorbing rate a satisfies:
A＝1-R-T＝1-|S11|2-|S21|2
wherein:
superscripts i, r represent incident and reflected, respectively.
So can pass through S11To evaluate the wave-absorbing performance of the absorber, | S11|2The smaller the size, the better the wave absorbing performance of the absorber; when S is11When the wave absorption rate reaches-10 dB, the wave absorption rate of the absorber can reach 90%.
As shown in fig. 3, the structure and parameters of the resistive high-frequency radiation absorber based on the frequency selective surface theory are shown, when the structural parameters of the absorber are: when P is 2mm, h is 1.2mm, s is 0.2mm, w is 0.3mm, and lr is 0.3mm, simulation was performed, and the simulation results are shown in fig. 4 and 5. Fig. 4 and 5 are graphs of reflection coefficients at the incidence of TE and TM waves with incidence angles of 0 °, 15 °, 30 °, and 45 °, respectively, in which it can be observed that the absorber structure can achieve a radiation suppression effect of-10 dB in the 18-29GHz band at the incidence of electromagnetic waves of 0 ° (normal incidence) regardless of whether the incident wave is a TE wave or a TM wave. When the incident angle gradually increases from 0 degrees to 45 degrees, the radiation suppression depth is weakened to a certain degree, and in the case that the incident wave is a TM wave, the radiation suppression peak has a certain deviation compared with the case of vertical incidence. However, no matter whether the incident wave is a TE wave or a TM wave, when the incident angle is changed, the absorber structure can achieve the absorption effect close to-10 dB in the frequency band of 20-30GHz, so that the angle stability of the absorber structure is excellent.
As shown in fig. 6, the working frequency band can be changed by changing the parameter h of the absorber, and under the condition of TE wave vertical incidence, all other parameters are kept unchanged, and the values of h are respectively 1mm, 1.1mm, 1.2mm and 1.3mm, and it can be clearly observed in the figure that the absorption peak of the absorber gradually moves to low frequency along with the increase of h, so that the size of h can be determined according to the actually required frequency band and bandwidth
As shown in fig. 7, the working frequency band can be changed by changing the parameter s of the absorber, and under the condition of TE wave vertical incidence, all other parameters are kept unchanged, and the values of s are respectively 0.15mm, 0.2mm, 0.25mm and 0.3mm, and it can be clearly observed in the figure that the absorption peak of the absorber gradually moves to high frequency along with the increase of s, so that the size of s can be determined according to the actually required frequency band and bandwidth
In addition, parameters except h and s are changed in a small range, so that the wave absorbing effect of the absorber structure is not greatly influenced.
As shown in fig. 8 and 9, the chip packaging scenario is mainly composed of three parts, a heat sink 6, a chip 8 and a PCB ground plate 9. In actual work, the square-clip-shaped absorber is adhered to the bottom of the heat radiator 6, the chip 8 is positioned in the center of the hollow part in the middle of the square clip shape, and the distance between the heat radiator 6 and the PCB grounding plate 9 is 6 mm.
As shown in fig. 10, in this scenario, the structure and a certain commercial wave-absorbing material 7 are respectively used to form a square-shaped absorber 11, the width of each square-shaped is 10mm, the square-shaped absorber is attached to the portion of the bottom plate 10 of the heat sink in the simulated chip packaging model, and the chip 13 is located at the center of the hollow portion in the square-shaped absorber 11. The thickness of the commercial wave-absorbing material 7 is 2mm, and for comparison, a metal heightening layer 12 is added at the bottom of the square-shaped structure formed by the absorber, so that the total thickness of the square-shaped structure in two cases is ensured to be 2 mm. Simulation is carried out in the chip packaging scene, the radiation energy values before and after the addition of the zigzag absorber 11 are respectively tested, and the radiation inhibition effect, namely the radiation inhibition curve, of each absorber can be obtained by subtracting the two results. The comparison of the simulation results of the absorber structure and a certain commercial wave-absorbing material 7 is shown in fig. 9, which clearly shows that compared with the use of the commercial wave-absorbing material 7, the structure of the invention realizes more excellent radiation inhibition effect in the frequency band of 18.5GHz-30GHz, and realizes the radiation inhibition depth of-10 dB in the frequency band of 20.5GHz-27 GHz. Therefore, the radiation of the whole chip packaging scene can be effectively reduced by applying the absorber structure in the designed frequency band.
In this embodiment, the metal pattern 5 is a metal square ring with four notches, the chip resistor 6 is respectively located at the center of the four notches, and the metal pattern 5 and the chip resistor 6 integrally form a complete closed ring
In this embodiment, the bottom metal layer 1 is a flat square layer made of metal and has a thickness of 0.035 mm.
In this embodiment, the middle dielectric layer 2 is a flat square layer made of FR 4.
In the present embodiment, the thickness of the metal pattern 5 is 0.035 mm.
In this embodiment, the four chip resistors 6 are respectively located in the center of the gaps of the four metal patterns 5, and are connected to the two metal patterns 5, and the resistance is 160 Ω.
In this embodiment, a radiation suppressing device of a resistive high-frequency radiation absorber structure based on the frequency selective surface theory includes a printed circuit board and an absorber. The invention is suitable for radiation inhibition in packaging of chips, printed circuit boards and the like, particularly has obvious inhibition effect on electromagnetic radiation of high frequency band, and can change the effective working frequency band by adjusting related design parameters, thereby enlarging the application range.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (7)
1. A resistive high-frequency radiation absorber structure based on frequency selective surface theory, characterized in that: the absorber comprises absorber units which are periodically arranged, wherein each absorber unit sequentially comprises a bottom metal layer, a middle dielectric layer and an upper pattern layer from bottom to top, the upper pattern layer consists of metal patterns and chip resistors, and the metal patterns and the chip resistors form a complete closed circuit.
2. The structure of claim 1, wherein the metal pattern is a square metal ring with four notches, the chip resistor is located at the center of each notch, and the metal pattern and the chip resistor form a complete closed ring integrally.
3. A resistive high-frequency radiation absorber structure according to claim 2, wherein said metal pattern has a thickness of 0.035 mm.
4. The structure of claim 3, wherein the four chip resistors are located at the center of the four gaps of the metal pattern and connected to the metal patterns at two sides, and the resistance is 160 Ω.
5. A resistive high-frequency radiation absorber structure based on frequency selective surface theory according to claim 1, characterized in that the bottom metal layer is a flat square layer of metal with a thickness of 0.035 mm.
6. The structure of claim 1, wherein the intermediate dielectric layer is a flat square layer made of FR 4.
7. A radiation suppressing device using the resistive type high-frequency radiation absorber structure based on the frequency selective surface theory according to claims 1 to 5, characterized in that: including printed circuit boards and absorber structures.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114336006A (en) * | 2021-11-29 | 2022-04-12 | 中国人民解放军国防科技大学 | Antenna with frequency reconfigurable in-phase reflection characteristic |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130050006A1 (en) * | 2011-08-22 | 2013-02-28 | Electronics And Telecommunications Research Institute | Electromagnetic wave reverberation chamber |
| CN113451784A (en) * | 2021-07-14 | 2021-09-28 | 海宁利伊电子科技有限公司 | High-performance packaging radiation absorption structure |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130050006A1 (en) * | 2011-08-22 | 2013-02-28 | Electronics And Telecommunications Research Institute | Electromagnetic wave reverberation chamber |
| CN113451784A (en) * | 2021-07-14 | 2021-09-28 | 海宁利伊电子科技有限公司 | High-performance packaging radiation absorption structure |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114336006A (en) * | 2021-11-29 | 2022-04-12 | 中国人民解放军国防科技大学 | Antenna with frequency reconfigurable in-phase reflection characteristic |
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