CN116322009A - Dual-band space electromagnetic interference suppression packaging structure based on fork-shaped complementary EBG - Google Patents
Dual-band space electromagnetic interference suppression packaging structure based on fork-shaped complementary EBG Download PDFInfo
- Publication number
- CN116322009A CN116322009A CN202310300711.XA CN202310300711A CN116322009A CN 116322009 A CN116322009 A CN 116322009A CN 202310300711 A CN202310300711 A CN 202310300711A CN 116322009 A CN116322009 A CN 116322009A
- Authority
- CN
- China
- Prior art keywords
- frequency
- fork
- ebg
- patch
- shaped complementary
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000000295 complement effect Effects 0.000 title claims abstract description 90
- 230000001629 suppression Effects 0.000 title claims abstract description 35
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 118
- 229910052751 metal Inorganic materials 0.000 claims abstract description 118
- 239000000758 substrate Substances 0.000 claims abstract description 69
- 235000001674 Agaricus brunnescens Nutrition 0.000 claims abstract description 59
- 238000000034 method Methods 0.000 claims abstract description 16
- 238000004891 communication Methods 0.000 claims abstract description 8
- 238000012360 testing method Methods 0.000 claims description 39
- 230000005855 radiation Effects 0.000 claims description 22
- 238000004364 calculation method Methods 0.000 claims description 19
- PEZNEXFPRSOYPL-UHFFFAOYSA-N (bis(trifluoroacetoxy)iodo)benzene Chemical compound FC(F)(F)C(=O)OI(OC(=O)C(F)(F)F)C1=CC=CC=C1 PEZNEXFPRSOYPL-UHFFFAOYSA-N 0.000 claims description 15
- 230000009977 dual effect Effects 0.000 claims description 11
- 230000000694 effects Effects 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000012937 correction Methods 0.000 claims description 3
- 230000035699 permeability Effects 0.000 claims description 3
- 238000000926 separation method Methods 0.000 claims description 3
- 230000008859 change Effects 0.000 abstract description 3
- 230000008569 process Effects 0.000 abstract description 2
- 230000005540 biological transmission Effects 0.000 description 10
- 238000013461 design Methods 0.000 description 9
- 230000008878 coupling Effects 0.000 description 8
- 238000010168 coupling process Methods 0.000 description 8
- 238000005859 coupling reaction Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 239000011358 absorbing material Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 230000005764 inhibitory process Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012795 verification Methods 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000012938 design process Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 210000004904 fingernail bed Anatomy 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/01—Frequency selective two-port networks
- H03H7/0115—Frequency selective two-port networks comprising only inductors and capacitors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B15/00—Suppression or limitation of noise or interference
- H04B15/005—Reducing noise, e.g. humm, from the supply
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B15/00—Suppression or limitation of noise or interference
- H04B15/02—Reducing interference from electric apparatus by means located at or near the interfering apparatus
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0007—Casings
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0007—Casings
- H05K9/0015—Gaskets or seals
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Landscapes
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Waveguide Aerials (AREA)
Abstract
A dual-band space electromagnetic interference suppression packaging structure based on fork-shaped complementary EBG belongs to the technical field of microwave radio frequency device system packaging, and solves the problem that a traditional mushroom-type EBG packaging metal frame only has single stop band characteristics and is not suitable for dual-band WIFI wireless communication; based on the structure of the invention, electromagnetic noise is restrained and isolated by the fork-shaped complementary compact double-frequency mushroom type EBG on the metal frame in the propagation process, the fork-shaped complementary compact double-frequency mushroom type EBG can form a low impedance path in the vertical direction with the metal frame substrate and the metal stratum, and the electromagnetic noise is isolated on the propagation path according to the principle that current conforms to the lowest impedance path; meanwhile, the invention cascades the two small outer patches and the inner patches with different sizes in one traditional mushroom EBG unit, thereby not only realizing miniaturization, but also adjusting the gap size of the EBG metal patches to change mutual capacitance and mutual inductance between the metal patches and realizing control of double-frequency independent adjustment.
Description
Technical Field
The invention belongs to the technical field of microwave radio frequency device system packaging, and relates to a dual-band space electromagnetic interference suppression packaging structure based on fork-shaped complementary EBG.
Background
With the development of the age, modern electronic technology gradually trends to miniaturization and high integration along with the progress of human science and technology, and the functions, the volumes and the working efficiency of the microwave integrated circuits also have stricter requirements. In modern high-speed digital circuitry, a large number of dense active, passive devices occupy the circuit and lead to more crowded routing and cluttered device layout due to reduced board-level size, resulting in unavoidable issues facing electromagnetic interference (EMI), etc.
There are many possible mechanisms by which digital noise is coupled to the RF receiver, and improper package design will provide good channels and bridges for EM noise propagation in a multi-layer PCB package. If noise transmission is released, the working pressure of the radio frequency device is necessarily increased, and the normal working performance is affected. Many high-speed digital Integrated Circuits (ICs) are often tightly integrated with radio frequency antennas to achieve the minimum package size for embedding various multifunctional components, but this often results in Electromagnetic (EM) noise emitted from the ICs interfering with surrounding RF devices (such as antennas), resulting in reduced sensitivity of the radio frequency receiver, and affecting the normal operation of the radio frequency devices. This Radio Frequency Interference (RFI) problem can occur frequently during the development phase of a product and can result in development progress delays. In addition, more and more electronic products are packaged by using metal frames, from the viewpoint of RFI, metal materials often provide good coupling paths for noise propagation, when ICs near the metal frames work, electromagnetic radiation is caused to the packaging metal layers, induced currents are generated, and if any diffusion on the metal frames aggravates noise propagation, further the radio frequency devices at the edges of the board are more endangered. In summary, from the circuit point of view, how to reduce EM noise crosstalk between components, effectively cut off EM noise diffusion on the transmission path, and enhance isolation between the digital integrated circuit and the radio frequency device in the hybrid component package is one of the urgent problems to be solved.
There are many ways to reduce the EM noise interference problem between such package components. Xinbo He published under IEEE trans. Electric magnetic. Compat journal Mitigation of Unintentional Radiated Emissions from Tall VLSI Heatsinks Using Ground Posts which proposes to use a method of connecting a radiation source and a stratum by a short-circuit via hole to achieve radiation suppression of noise of the radiation source. P. -s.kildeal et al published under IEEE trans.antenna wire. Propag.lett on Local Metamaterial-Based Waveguides in Gaps Between Parallel Metal Plates propose a nail bed package structure called a ridge gap waveguide that allows noise to be cut off by textured surfaces with high impedance characteristics during propagation. Scholars k.joo et al also propose a method of using silver coated wave absorbing materials that can be sprayed with different thicknesses of wave absorbing material over the path of noise propagation to adjust the dampening properties. However, these methods have the problems of poor low-frequency suppression effect and too high cost, and cannot be adapted to the dual-frequency requirement in the modern communication network, and also need to spend a great deal of time for dealing with related matters in the design process.
Disclosure of Invention
The invention aims to design a dual-band space electromagnetic interference suppression packaging structure based on fork-shaped complementary EBG, so as to solve the problem that a packaging metal frame utilizing the traditional mushroom-type EBG in the prior art only has single stop band characteristic and is not suitable for dual-band WIFI wireless communication.
The invention solves the technical problems through the following technical scheme:
dual-band space electromagnetic interference suppression packaging structure based on fork-shaped complementary EBG includes: a test dielectric substrate (11) and a metal frame substrate (21); an air medium gap is formed between the test medium substrate (11) and the metal frame substrate (21);
a series resonant circuit is formed between the metal layer (701) of the metal frame substrate (21) and an array formed by a plurality of fork-shaped complementary compact double-frequency mushroom type EBGs (91) attached to the surface of the metal frame substrate (21) and a metal stratum (801) of the test medium substrate (11);
the fork-shaped complementary compact double-frequency mushroom type EBG (91) is formed by cascading an outer patch (901) and an inner patch (902), a gap is etched between the outer patch (901) and the inner patch (902) to separate, and the outer patch (901) and the inner patch (902) are connected to a metal layer (701) of a metal frame substrate (21) through connecting through holes (903); the outer patch (901) and the inner patch (902) form a low-impedance path in the vertical direction with the metal layer (701) of the metal frame substrate (21) and the metal stratum (801) of the test medium substrate (11); the mutual capacitance and mutual inductance are changed by adjusting the size of a gap between the outer patch (901) and the inner patch (902), so that double-frequency independent adjustment is realized.
Further, the test medium substrate (11) is provided with: a radiation source microstrip line (401), a coaxial feed metal column (402) and a 50Ω resistor terminal (403); the radiation source microstrip line (401) is horizontally paved on the upper surface of the test medium substrate (11) along the x-axis direction, one end of the radiation source microstrip line (401) is connected to the metal stratum (801) through the coaxial feed metal column (402) to realize feed, the other end of the radiation source microstrip line (401) is connected with one end of the 50 omega resistor terminal (403), and the other end of the 50 omega resistor terminal (403) is vertically connected to the metal stratum (801).
Further, the test medium substrate (11) is further provided with: a disturbed source dual-frequency PIFA antenna (61); the disturbed source double-frequency PIFA antenna (61) is tiled at the edge of the upper surface of the test dielectric substrate (11), and the grounding end (611) and the feeding end (612) of the disturbed source double-frequency PIFA antenna (61) penetrate through the test dielectric substrate (11) and are vertically connected with the metal stratum (801).
Further, the first frequency band of the disturbed source dual-band PIFA antenna (61) is designed at 3.3GHz, the second resonance frequency is designed at 5.1GHz, and the two frequency bands are respectively designed based on the 3.3GHz frequency band of 5G communication and the 5.2GHz frequency band of WLAN ISM.
Further, the test medium substrate (11) is further provided with: a first array of metallized vias (501), a second array of metallized vias (502); the periphery of the radiation source microstrip line (401) is provided with a first metallized through hole array (501), and the periphery of the outer edge of the test medium substrate (11) is provided with a second metallized through hole array (502).
Further, the test medium substrate (11) and the metal frame substrate (21) are fixedly connected by a plurality of screws (301).
Further, the method for calculating the resonance frequency of the series resonance circuit comprises the following steps:
1) Calculating equivalent capacitance C of one-dimensional equivalent LC circuit of series resonant circuit 1 And C 0 Gap capacitance C g ；
Equivalent capacitance C of one-dimensional equivalent LC circuit of the series resonant circuit 1 And C 0 The calculation formula of (2) is as follows:
the gap capacitance C g The calculation formula of (2) is as follows:
wherein, C 0 Representing the equivalent parallel plate capacitance, C, between a fork-shaped complementary compact double frequency mushroom type EBG (91) to a metal formation (801) 1 Representing the equivalent parallel plate capacitance, t, between a fork-shaped complementary compact double frequency mushroom type EBG (91) to a metal layer (701) 0 Represents the distance, t, between the fork-shaped complementary compact double frequency mushroom type EBG (91) and the metal stratum (801) 1 Representing the distance between the fork-shaped complementary compact double-frequency mushroom-type EBG (91) and the metal layer (701), delta is a correction factor considering the fringe capacitance effect, L, W is the effective length and width of the fork-shaped complementary compact double-frequency mushroom-type EBG (91), t is the height of the connecting via (903), w is the effective width of the patch, g is the patch gap distance, epsilon 0 Is the dielectric constant of free space epsilon r Is the relative permittivity;
2) Self-inductance L of computing patch S Chip mutual inductance M and through hole inductance L V Thereby calculating the total inductance L t ；
The patch self-inductance L S The calculation formula of (2) is as follows:
the calculation formula of the patch mutual inductance M is as follows:
the through hole inductance L V The calculation formula of (2) is as follows:
thus, the total inductance L t The calculation formula of (2) is as follows:
L t ＝L s +M+L v (7)
wherein l i Is a rectangular patch length, a i 、b i Width and thickness of rectangular patch, M 1 Is the mutual inductance of the patches between the outer patch (901) and the inner patch (902), M 2 Is the mutual inductance of the outer patch (901) of the fork-shaped complementary compact double-frequency mushroom type EBG (91) and the adjacent inner patch (902) of the fork-shaped complementary compact double-frequency mushroom type EBG (91), mu 0 Is free space permeability; u (u) j Is the overlapping distance between adjacent patches, v j Is the separation distance between adjacent patches, j is the count factor, j=1, 2 j The mutual inductance value of the single mutual inductance piece; t is the via height and r is the via radius;
3) The resonant frequency of the series resonant circuit is calculated as follows:
wherein f c Is the resonant frequency of the series resonant circuit.
The invention has the advantages that:
based on the structure of the invention, electromagnetic noise is effectively and doubly stopband inhibited and isolated by the fork-shaped complementary compact double-frequency mushroom type EBG (91) on the metal frame in the propagation process, because the fork-shaped complementary compact double-frequency mushroom type EBG (91) can form a low impedance path in the vertical direction with the metal frame substrate (21) and the metal stratum (801), and the electromagnetic noise is isolated on the propagation path according to the physical principle that current complies with the lowest impedance path; meanwhile, the invention cascades the two small outer patches (901) and the inner patches (902) with different sizes in one traditional mushroom EBG unit, thereby not only realizing miniaturization, but also adjusting the gap size of the EBG metal patches to change mutual capacitance and mutual inductance between the metal patches and realizing control of double-frequency independent adjustment.
Drawings
FIG. 1 is an overall perspective view of a dual band spatial electromagnetic interference suppression package structure based on fork-shaped complementary EBG of the present invention;
FIG. 2 is a top view of a dual band spatial electromagnetic interference suppression package structure based on fork-shaped complementary EBG according to the present invention;
FIG. 3 is a top perspective view of a test dielectric substrate as the lower layer of the dual-band spatial EMI suppression package structure based on fork-shaped complementary EBG of the present invention;
FIG. 4 is a top perspective view of a fork-shaped complementary EBG-based dual-band spatial electromagnetic interference suppression package structure of the present invention with a metal frame substrate on top;
FIG. 5 is a side view of a dual band spatial electromagnetic interference suppression package structure based on fork-shaped complementary EBGs of the present invention;
FIG. 6 is a dimensioning of a fork-shaped complementary compact dual frequency mushroom type EBG of the present invention;
FIG. 7 is an equivalent circuit diagram of a fork-shaped complementary compact dual frequency mushroom type EBG of the present invention;
FIG. 8 is an equivalent circuit diagram between an nth fork-shaped complementary compact dual-frequency mushroom-type EBG of the present invention and an adjacent n+1th fork-shaped complementary compact dual-frequency mushroom-type EBG;
FIG. 9 is a graph showing simulated noise coupling contrast of the dual-band spatial electromagnetic interference suppression package structure based on fork-shaped complementary EBG according to the present invention, wherein the wave guide transmission method is used for analyzing and verifying the stop band characteristics of the package structure and the independent external patch and internal patch;
FIG. 10 shows the convex length L of the inner patch of the fork-shaped complementary compact dual-frequency mushroom-type EBG of the present invention ou1 Influence on noise coupling by a waveguide transmission method;
FIG. 11 shows the width W of two arms of the outer patch of the fork-shaped complementary compact dual-frequency mushroom-type EBG of the present invention ou3 Influence on noise coupling by a waveguide transmission method;
fig. 12 is a diagram showing the effect of noise coupling in the package overall structure of the dual-band antenna of the dual-band spatial electromagnetic interference suppression package structure based on fork-shaped complementary EBG according to the present invention.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions in the embodiments of the present invention will be clearly and completely described in the following in conjunction with the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The technical scheme of the invention is further described below with reference to the attached drawings and specific embodiments:
example 1
1. Dual-band space electromagnetic interference suppression packaging structure based on fork-shaped complementary EBG
As shown in fig. 1 and fig. 5, the dual-band space electromagnetic interference suppression package structure based on the fork-shaped complementary EBG is of an upper layer and a lower layer, the lower layer is a test medium substrate (11), the upper layer is a metal frame substrate (21), the test medium substrate (11) and the metal frame substrate (21) are fixedly connected by adopting a plurality of screws (301), and an air medium gap is formed between the test medium substrate (11) and the metal frame substrate (21).
Preferably, the dielectric layer materials of the test dielectric substrate (11) and the metal frame substrate (21) are F4B, the relative dielectric constant is 3.5, wherein the thickness of the dielectric substrate (101) is 1mm, and the thickness of the dielectric substrate (201) is 2mm; the sizes of the test medium substrate (11) and the metal frame substrate (21) are 45mm multiplied by 83mm; the gap between the test medium substrate (11) and the metal frame substrate (21) is 2mm; the screw (301) is made of polyethylene material.
As shown in fig. 2 and 3, the lower surface of the test medium substrate (11) is a metal stratum (801); the upper surface of the test medium substrate (11) is provided with: the dual-band PIFA antenna comprises a radiation source microstrip line (401), a coaxial feed metal column (402), a 50Ω resistor terminal (403), a first metallized through hole array (501), a second metallized through hole array (502) and a disturbed source dual-band PIFA antenna (61).
Preferably, the length of the radiation source microstrip line (401) is 18mm and the width is 1.8mm; microstrip lines are chosen as the radiation source because the electromagnetic field of the microstrip lines on the PCB has a similar distribution as the digital integrated circuit IC.
The radiation source microstrip line (401) is horizontally paved on the upper surface of the test medium substrate (11) along the x-axis direction, one end of the radiation source microstrip line (401) is connected to the metal stratum (801) through the coaxial feed metal column (402) to realize feed, the other end of the radiation source microstrip line (401) is connected with one end of the 50 omega resistor terminal (403), and the other end of the 50 omega resistor terminal (403) is vertically connected to the metal stratum (801).
The disturbed source double-frequency PIFA antenna (61) is tiled at the edge of the upper surface of the test dielectric substrate (11), and the grounding end (611) and the feeding end (612) of the disturbed source double-frequency PIFA antenna (61) penetrate through the test dielectric substrate (11) and are vertically connected with the metal stratum (801).
Preferably, the first frequency band of the disturbed source dual-band PIFA antenna (61) is designed at 3.3GHz, the second resonance frequency is designed at 5.1GHz, and the two frequency bands are respectively designed based on the 3.3GHz frequency band of 5G communication and the 5.2GHz frequency band of WLAN ISM.
The periphery of the radiation source microstrip line (401) is provided with a first metallized through hole array (501), and the purpose of the first metallized through hole array (501) is to prevent noise radiation of the microstrip line from diffusing in a test medium substrate (11) to influence a disturbed source double-frequency PIFA antenna (61) and to influence the main EMI problem of research;
the periphery of the outer edge of the test medium substrate (11) is provided with a second metallized through hole array (502), and the first metallized through hole array (501) and the second metallized through hole array (502) are arranged to prevent crosstalk noise generated by the radiation source microstrip line (401) from being coupled to the disturbed source double-frequency PIFA antenna (61) through the test medium substrate (11). Preferably, the first metallized via array (501) and the second metallized via array (502) have a via radius of 0.2mm and a spacing of 1.5mm, which is about one tenth of the wavelength in the F4B substrate.
As shown in fig. 4 and 6, the upper surface of the metal frame substrate (21) is a metal layer (701), a plurality of fork-shaped complementary compact double-frequency mushroom EBGs (91) are adhered to the lower surface of the metal frame substrate (21) according to an array, the fork-shaped complementary compact double-frequency mushroom EBGs (91) are adhered to the lower surface of the metal frame substrate (21), the fork-shaped complementary compact double-frequency mushroom EBGs (91) are formed by cascading an outer patch (901) and an inner patch (902), a gap is etched between the outer patch (901) and the inner patch (902), and the outer patch (901) and the inner patch (902) are connected to the metal layer (701) of the metal frame substrate (21) through connecting through holes (903). The fork-shaped complementary compact double-frequency mushroom type EBG (91) is formed by cascading the outer patch (901) and the inner patch (902), so that the occupied area of an EBG unit can be effectively reduced, and the miniaturization of a device is facilitated; it should also be noted that the design needs to take into account the effects of mutual inductance between patches.
The array of fork-shaped complementary compact double-frequency mushroom-shaped EBGs (91) of this embodiment is 7×6, which ensures a sufficient noise suppression depth, each fork-shaped complementary compact double-frequency mushroom-shaped EBG (91) has an effective size of 7mm×7mm, the spacing between adjacent fork-shaped complementary compact double-frequency mushroom-shaped EBGs (91) is 0.5mm, the radius of the connection through hole (903) is 0.2mm, and the through hole height is 2mm.
The fork-shaped complementary compact double-frequency mushroom-type EBG (91) is suitable for being packaged in a modern microwave circuit, the fork-shaped complementary compact double-frequency mushroom-type EBG (91) is formed by cascading an outer patch (901) and an inner patch (902), from the perspective of transmission line equivalent circuit topology, the outer patch (901) and the inner patch (902) form low-impedance paths in the vertical direction with a metal frame and a stratum, and on specific frequency bands, the outer patch (901) and the inner patch (902) can generate a stop band, and the outer patch (901) and the inner patch (902) are reasonably cascaded in the size of a mushroom EBG unit, so that miniaturization is realized, mutual capacity mutual inductance between the metal patches can be changed by adjusting the gap size of the EBG metal patches, and double-frequency independent adjustment is controlled.
The metal layer (701), the fork-shaped complementary compact double-frequency mushroom type EBG (91) array layer and the metal stratum (801) form a series resonant circuit, and the series resonant circuit has low impedance characteristics in a specific frequency band, so that the propagated noise is short-circuited, and an effective stop band is generated to inhibit the noise from continuing to propagate.
The resonant frequency calculation method of the series resonant circuit comprises the following steps:
1) Calculating equivalent capacitance C of one-dimensional equivalent LC circuit of series resonant circuit 1 And C 0 Gap capacitance C g ；
Equivalent capacitance C of one-dimensional equivalent LC circuit of the series resonant circuit 1 And C 0 The calculation formula of (2) is as follows:
the gap capacitance C g The calculation formula of (2) is as follows:
wherein, C 0 Representing the equivalent parallel plate capacitance, C, between a fork-shaped complementary compact double frequency mushroom type EBG (91) to a metal formation (801) 1 Representing the equivalent parallel plate capacitance, t, between a fork-shaped complementary compact double frequency mushroom type EBG (91) to a metal layer (701) 0 Represents the distance, t, between the fork-shaped complementary compact double frequency mushroom type EBG (91) and the metal stratum (801) 1 Representing the distance between the fork-shaped complementary compact double frequency mushroom type EBG (91) and the metal layer (701), delta is consideredThe correction factor of fringe capacitance effect, L, W is the effective length and width of fork-shaped complementary compact double frequency mushroom type EBG (91), t is the height of the connecting via (903), w is the effective width of the patch, g is the patch gap distance, ε 0 Is the dielectric constant of free space epsilon r Is the relative permittivity.
2) Self-inductance L of computing patch S Chip mutual inductance M and through hole inductance L V Thereby calculating the total inductance L t ；
The patch self-inductance L S The calculation formula of (2) is as follows:
the calculation formula of the patch mutual inductance M is as follows:
the through hole inductance L V The calculation formula of (2) is as follows:
thus, the total inductance L t The calculation formula of (2) is as follows:
L t ＝L s +M+L v (7)
wherein l i Is a rectangular patch length, a i 、b i Width and thickness of rectangular patch, M 1 Is the mutual inductance of the patches between the outer patch (901) and the inner patch (902), M 2 Is a paste between an outer paste (901) of a fork-shaped complementary compact double-frequency mushroom type EBG (91) and an inner paste (902) of a fork-shaped complementary compact double-frequency mushroom type EBG (91) adjacent to the outer pasteMutual inductance of sheet, mu 0 Is free space permeability; u (u) j Is the overlapping distance between adjacent patches, v j Is the separation distance between adjacent patches, j is the count factor, j=1, 2 j The mutual inductance value of the single mutual inductance piece; t is the via height and r is the via radius.
3) Calculating the resonant frequency f of the series resonant circuit c ；
Resonant frequency f of the series resonant circuit c The calculation formula of (2) is as follows:
wherein f c Is the resonant frequency of the series resonant circuit.
2. Operating principle of dual-band space electromagnetic interference suppression packaging structure based on fork-shaped complementary EBG
The design method of the reference waveguide transmission method is generally suitable for the condition that the structure is symmetrical and only a limited number of periodic cells exist in the electromagnetic wave transmission direction, and can rapidly and effectively guide the stop band design and the band adjustment of the EBG.
In order to analyze the frequency response of the invention from a physical angle, the center frequency of the stop band is predicted, a one-dimensional equivalent circuit model is established, and FIGS. 7 and 8 are respectively a fork-shaped complementary compact double-frequency mushroom type EBG (91) forming two passing gap capacitances C g The cascade series resonance circuit is mainly used for independent frequency modulation analysis after a series resonance relation is formed between an nth fork-shaped complementary compact double-frequency mushroom type EBG (91) and an (n+1) th fork-shaped complementary compact double-frequency mushroom type EBG (91) unit.
The interior of the fork-shaped complementary compact double frequency mushroom type EBG (91) structure shown in fig. 1 is regarded as two parts of an outer patch (901) and an inner patch (902) by being separated by a gap, and the coupling between the outer patch (901) and the inner patch (902) needs to be considered in this step due to the longer interval between the outer patch (901) and the inner patch (902).
FIG. 7 shows an outer patch (901) and an inner patch inside a fork-shaped complementary compact double frequency mushroom type EBG (91)(902) Fig. 8 is a schematic diagram showing a cascade equivalent circuit topology formed by an outer patch (901) portion of an nth fork-shaped complementary compact double frequency mushroom-type EBG (91) and an inner patch (902) portion of an adjacent (n+1) fork-shaped complementary compact double frequency mushroom-type EBG (91). Wherein C is ol Is a capacitance formed in a vertical direction by the outer patch (901) and the metal layer (701) on the metal frame; c (C) og Is the capacitance formed by the outer patch (901) and the metal layer (801) in the vertical direction. C (C) il Is a capacitance formed in a vertical direction by the outer patch (901) and the metal layer (701) on the metal frame; c (C) ig Is the capacitance formed by the outer patch (901) and the metal layer (801) in the vertical direction. C (C) g Is a gap capacitor formed between an inner and an outer patch (901, 902) of a fork-shaped complementary compact double frequency mushroom type EBG (91) structure. M is M 1 Is formed by mutual inductance between an inner and an outer patch (901, 902) of a fork-shaped complementary compact double frequency mushroom type EBG (91) structure, and L o_v 、L i_v The via inductances formed by the EBG metal vias of the outer patch (901) and the inner patch (902), respectively; l (L) o_s 、L i_s The self-inductance of the metal patch on the metal patch of the EBG of the outer patch (901) and the inner patch (902), respectively. And C in FIG. 8 il_2 、C ig_2 The capacitances formed in the vertical direction with respect to the metal layer (701) of the inner patch (902) of the (n+1) th EBG cell adjacent to the (n) th EBG cell are respectively represented. M is M 2 And C g ' denote the chip mutual inductance and the gap capacitance, L, respectively, formed between the outer chip (901) of the nth EBG cell and the inner chip (902) of the (n+1) th EBG cell adjacent thereto i_v_2 And L i_s_2 The metal via inductance and the metal EBG patch self-inductance of the inner patch (902) of the n+1th EBG cell are shown, respectively.
The first stop band suppression point of the double stop band effect of the fork-shaped complementary compact double frequency mushroom type EBG (91) is formed by an outer patch (901) in a fork-shaped complementary compact double frequency mushroom type EBG (91) unit, and the outer patch (901) corresponds to an equivalent capacitance C of a metal layer (701) on a metal frame (21) ol Equivalent capacitance C formed between the metal layer (801) og And a structure between the outer patch (901) and the inner patch (902)The gap capacitance forms the capacitance part of the equivalent LC circuit, and the metal through hole inductance L of the external patch (901) o_v EBG metal patch self-inductance L o_s Mutual inductance M formed between the inner patch (902) patch 1 Constituting the inductive part in the equivalent LC circuit.
The first stop band resonance point of the EBG is obtained from LC resonance circuit resonance equation (7):
as can be seen from the parallel plate capacitance formula (8), when the height of the parallel plate waveguide and the dielectric material are unchanged, the effective projection area of the parallel plate double plates plays a key role, so that the inhibition frequency band corresponding to the external patch (901) is the first resonant frequency f in the double frequencies c1 (903) the corresponding suppressed band is the first resonant frequency f in the dual frequency c2 At the same time consider the mutual inductance M between the patches and the gap capacitance C g Will result in a double frequency downshifting, as demonstrated by waveguide transfer verification, as shown in fig. 9.
The first stop band suppression point of the dual stop band effect of the fork-shaped complementary compact dual frequency mushroom EBG (91) is constituted by an inner patch (902) within one compact dual frequency mushroom EBG (91) unit. Equivalent capacitance C of the inner patch (902) corresponding to the metal layer (701) on the metal frame (201) il Equivalent capacitance C formed between the layer (801) ig And the gap capacitance formed between the outer patch (901) and the inner patch (902) forms a capacitance part in the equivalent LC circuit, and the metal through hole inductance L of the inner patch (902) i_v EBG metal patch self-inductance L i_s Mutual inductance M formed between the inner patch (902) patch 1 Constituting the inductive part in the equivalent LC circuit. The second stop band resonance point of the EBG is obtained from LC resonance circuit resonance equation (7):
through full wave simulation, the influence of the metal frame of the fork-shaped complementary compact dual-frequency mushroom EBG on noise suppression can be obtained, as shown in fig. 12. The bandwidth of the first resonant frequency at the-40 dB inhibition level is 3.3-3.6 GHz, and the method is suitable for protecting the first working frequency band of the dual-frequency antenna from being influenced by noise and provides the minimum noise coupling level of the highest-55.9 GHz. The bandwidth of the second resonant frequency at the-40 dB suppression level is 5.05-6.46 GHz, which is suitable for protecting the second working frequency band of the dual-frequency antenna from noise and provides the minimum noise coupling level of highest-64.3 GHz. Noise suppression at 3.5GHz is even reduced by 16.32dB compared to the case without the metal frame, and noise suppression at 6.2GHz is even reduced by 15.25dB compared to the case without the metal frame.
3. Dual-frequency independent frequency modulation principle of dual-band space electromagnetic interference suppression packaging structure based on fork-shaped complementary EBG
The double-frequency independent frequency modulation of the double-frequency space electromagnetic interference suppression packaging structure based on the fork-shaped complementary EBG mainly starts from two angles of capacitance and inductance according to actual application scenes, and the adjustment of the capacitance is mainly realized by adjusting the effective area sizes of metal patches of an outer patch (901) and an inner patch (902) of the fork-shaped complementary compact double-frequency mushroom type EBG (91) to adjust the projection area of the metal patches of the EBG to a metal frame and to the ground to change the corresponding middle parallel plate capacitance of the equivalent LC circuit; the inductance L is adjusted mainly by considering the mutual inductance between the via inductance and the EBG patch.
Firstly, from the perspective of capacitance, the key parameters of the equivalent parallel plate capacitance obtained by the parallel plate waveguide equivalent transmission line theory are the waveguide height h and the effective projection area S of the waveguide upper layer to the waveguide lower layer, and the parallel plate capacitance formula:
as shown in fig. 6, a parameter W is set ou3 The width of the double arms of the outer patch (901) in the fork-shaped complementary compact double-frequency mushroom type EBG (91) unit is adjusted to adjust the effective area of the metal patch to realize independent frequency modulation, and meanwhile, the method starts from the path of electromagnetic noise propagation and analyzes the shapeThe resulting gap capacitance can be found to adjust W ou3 The mutual inductance between the outer patch (901) and the inner patch (902) has negligible effect, so the parameter W is adjusted ou3 The S-parameters were obtained by waveguide transmission method verification by weighing the considered independent tuning parameters, as shown in fig. 10.
Second set the parameter L ou1 The length of the outer convex small patch (901) in the fork-shaped complementary compact double-frequency mushroom type EBG (91) unit is adjusted and regulated, and from the angles of mutual inductance theory and gap capacitance, the length is taken as the parameter L ou1 When the mutual inductance is increased, the mutual inductance M between the metal patch of the outer patch (901) in the nth fork-shaped complementary compact double-frequency mushroom type EBG (91) and the metal patch of the inner patch (902) in the (n+1) th fork-shaped complementary compact double-frequency mushroom type EBG (91) is caused as shown by the patch mutual inductance formulas (5) and (6) 2 The S-parameters were verified by waveguide transport to be available for enhancement, as shown in fig. 11.
Aiming at the problem that a radio frequency component is easy to be interfered by EM noise in the combined design of a digital circuit and the radio frequency RF component, the invention designs a fork-shaped complementary compact double-frequency mushroom type EBG structure which is suitable for a double-frequency-band radio frequency device in a modern communication network to reduce the noise interference degree of the double-frequency-band radio frequency device, and in the invention, a 3.3 GHz-frequency-band double-frequency antenna for 5G communication and a 5.2 GHz-frequency-band double-frequency antenna of WLAN ISM are selected as interference sources. Compared with the traditional mushroom EBG with only a single stop band, the invention has the main innovation points that: (1) The fork-shaped complementary compact double-frequency mushroom EBG is realized by cascading two small EBG units corresponding to different frequency bands in one traditional mushroom type EBG unit and reasonably designing the sizes of the EBG units, so that the same or even smaller unit sizes have double-frequency noise suppression capability; (2) The small-size EBG under the two cascade connection innovatively utilizes the gap capacitance between the patches and the mutual inductance between the metal patches to realize the independent adjustment of the dual-frequency stop band, so that the invention has certain flexibility and application universality. The compact double-frequency mushroom type EBG is mainly applied to the design of series resonant circuit short-circuit EM noise by using the parallel plate grounding capacitance and the through hole inductance of the EBG patch because the compact double-frequency mushroom type EBG is applied to a packaging waveguide structure, and is also a design method of a traditional mushroom type EBG.
The above embodiments are only for illustrating the technical solution of the present invention, and are not limiting; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (7)
1. Dual-band space electromagnetic interference suppression packaging structure based on fork-shaped complementary EBG, which is characterized by comprising: a test dielectric substrate (11) and a metal frame substrate (21); an air medium gap is formed between the test medium substrate (11) and the metal frame substrate (21);
a series resonant circuit is formed between the metal layer (701) of the metal frame substrate (21) and an array formed by a plurality of fork-shaped complementary compact double-frequency mushroom type EBGs (91) attached to the surface of the metal frame substrate (21) and a metal stratum (801) of the test medium substrate (11);
the fork-shaped complementary compact double-frequency mushroom type EBG (91) is formed by cascading an outer patch (901) and an inner patch (902), a gap is etched between the outer patch (901) and the inner patch (902) to separate, and the outer patch (901) and the inner patch (902) are connected to a metal layer (701) of a metal frame substrate (21) through connecting through holes (903); the outer patch (901) and the inner patch (902) form a low-impedance path in the vertical direction with the metal layer (701) of the metal frame substrate (21) and the metal stratum (801) of the test medium substrate (11); the mutual capacitance and mutual inductance are changed by adjusting the size of a gap between the outer patch (901) and the inner patch (902), so that double-frequency independent adjustment is realized.
2. The dual-band spatial electromagnetic interference suppression package structure based on fork-shaped complementary EBG according to claim 1, wherein said test dielectric substrate (11) is provided with: a radiation source microstrip line (401), a coaxial feed metal column (402) and a 50Ω resistor terminal (403); the radiation source microstrip line (401) is horizontally paved on the upper surface of the test medium substrate (11) along the x-axis direction, one end of the radiation source microstrip line (401) is connected to the metal stratum (801) through the coaxial feed metal column (402) to realize feed, the other end of the radiation source microstrip line (401) is connected with one end of the 50 omega resistor terminal (403), and the other end of the 50 omega resistor terminal (403) is vertically connected to the metal stratum (801).
3. The dual-band spatial electromagnetic interference suppression package structure based on fork-shaped complementary EBG according to claim 2, wherein said test dielectric substrate (11) is further provided with: a disturbed source dual-frequency PIFA antenna (61); the disturbed source double-frequency PIFA antenna (61) is tiled at the edge of the upper surface of the test dielectric substrate (11), and the grounding end (611) and the feeding end (612) of the disturbed source double-frequency PIFA antenna (61) penetrate through the test dielectric substrate (11) and are vertically connected with the metal stratum (801).
4. The dual band spatial electromagnetic interference suppression package structure based on fork-shaped complementary EBG according to claim 3, wherein said disturbed source dual band PIFA antenna (61) has a first frequency band designed at 3.3GHz and a second resonant frequency designed at 5.1GHz, both frequency bands being designed based on the 3.3GHz band of 5G communication and the 5.2GHz band of WLAN ISM, respectively.
5. A dual-band spatial electromagnetic interference suppression package structure based on fork-shaped complementary EBG according to claim 3, wherein said test dielectric substrate (11) is further provided with: a first array of metallized vias (501), a second array of metallized vias (502); the periphery of the radiation source microstrip line (401) is provided with a first metallized through hole array (501), and the periphery of the outer edge of the test medium substrate (11) is provided with a second metallized through hole array (502).
6. The dual-band spatial electromagnetic interference suppression package structure based on the fork-shaped complementary EBG according to claim 1, wherein a plurality of screws (301) are fixedly connected between the test dielectric substrate (11) and the metal frame substrate (21).
7. The dual-band spatial electromagnetic interference suppression package structure based on fork-shaped complementary EBG according to claim 1, wherein said method for calculating the resonance frequency of said series resonant circuit is as follows:
1) Calculating equivalent capacitance C of one-dimensional equivalent LC circuit of series resonant circuit 1 And C 0 Gap capacitance C g ；
Equivalent capacitance C of one-dimensional equivalent LC circuit of the series resonant circuit 1 And C 0 The calculation formula of (2) is as follows:
the gap capacitance C g The calculation formula of (2) is as follows:
wherein, C 0 Representing the equivalent parallel plate capacitance, C, between a fork-shaped complementary compact double frequency mushroom type EBG (91) to a metal formation (801) 1 Representing the equivalent parallel plate capacitance, t, between a fork-shaped complementary compact double frequency mushroom type EBG (91) to a metal layer (701) 0 Represents the distance, t, between the fork-shaped complementary compact double frequency mushroom type EBG (91) and the metal stratum (801) 1 Representing the distance between the fork-shaped complementary compact double-frequency mushroom-type EBG (91) and the metal layer (701), delta is a correction factor considering the fringe capacitance effect, L, W is the effective length and width of the fork-shaped complementary compact double-frequency mushroom-type EBG (91), t is the height of the connecting via (903), w is the effective width of the patch, g is the patch gap distance, epsilon 0 Is the dielectric constant of free space epsilon r Is the relative permittivity;
2) Meter with a meter bodySelf-inductance L of computing patch S Chip mutual inductance M and through hole inductance L V Thereby calculating the total inductance L t ；
The patch self-inductance L S The calculation formula of (2) is as follows:
the calculation formula of the patch mutual inductance M is as follows:
the through hole inductance L V The calculation formula of (2) is as follows:
thus, the total inductance L t Is a combination of the above:
L t ＝L s +M+L v (7)
wherein l i Is a rectangular patch length, a i 、b i Width and thickness of rectangular patch, M 1 Is the mutual inductance of the patches between the outer patch (901) and the inner patch (902), M 2 Is the mutual inductance of the outer patch (901) of the fork-shaped complementary compact double-frequency mushroom type EBG (91) and the adjacent inner patch (902) of the fork-shaped complementary compact double-frequency mushroom type EBG (91), mu 0 Is free space permeability; u (u) j Is the overlapping distance between adjacent patches, v j Is the separation distance between adjacent patches, j is the count factor, j=1, 2 j The mutual inductance value of the single mutual inductance piece; t is the via height and r is the via radius;
3) The resonant frequency of the series resonant circuit is calculated as follows:
wherein f c Is the resonant frequency of the series resonant circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310300711.XA CN116322009A (en) | 2023-03-23 | 2023-03-23 | Dual-band space electromagnetic interference suppression packaging structure based on fork-shaped complementary EBG |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310300711.XA CN116322009A (en) | 2023-03-23 | 2023-03-23 | Dual-band space electromagnetic interference suppression packaging structure based on fork-shaped complementary EBG |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116322009A true CN116322009A (en) | 2023-06-23 |
Family
ID=86816588
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310300711.XA Pending CN116322009A (en) | 2023-03-23 | 2023-03-23 | Dual-band space electromagnetic interference suppression packaging structure based on fork-shaped complementary EBG |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116322009A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116914447A (en) * | 2023-09-14 | 2023-10-20 | 成都锐芯盛通电子科技有限公司 | Dual-band multichannel SIP module |
| CN117394032A (en) * | 2023-12-12 | 2024-01-12 | 微网优联科技(成都)有限公司 | Directional and omnidirectional pattern reconfigurable antenna based on complementary principle |
-
2023
- 2023-03-23 CN CN202310300711.XA patent/CN116322009A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116914447A (en) * | 2023-09-14 | 2023-10-20 | 成都锐芯盛通电子科技有限公司 | Dual-band multichannel SIP module |
| CN116914447B (en) * | 2023-09-14 | 2023-12-22 | 成都锐芯盛通电子科技有限公司 | Dual-band multichannel SIP module |
| CN117394032A (en) * | 2023-12-12 | 2024-01-12 | 微网优联科技(成都)有限公司 | Directional and omnidirectional pattern reconfigurable antenna based on complementary principle |
| CN117394032B (en) * | 2023-12-12 | 2024-02-06 | 微网优联科技(成都)有限公司 | Directional and omnidirectional pattern reconfigurable antenna based on complementary principle |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN116322009A (en) | Dual-band space electromagnetic interference suppression packaging structure based on fork-shaped complementary EBG | |
| US20180277946A1 (en) | Antenna apparatus | |
| US7629930B2 (en) | Systems and methods using ground plane filters for device isolation | |
| US8159413B2 (en) | Double-stacked EBG structure | |
| KR100851076B1 (en) | Electromagnetic bandgap structure and printed circuit board | |
| US8330048B2 (en) | Electromagnetic bandgap structure and printed circuit board having the same | |
| US20050104678A1 (en) | System and method for noise mitigation in high speed printed circuit boards using electromagnetic bandgap structures | |
| US9629282B2 (en) | Electronic device, structure, and heat sink | |
| KR101038236B1 (en) | printed circuit board having electromagnetic bandgap structure | |
| US9231291B2 (en) | Electromagnetic bandgap structure and method for manufacturing electromagnetic bandgap structure | |
| US8399777B2 (en) | Electromagnetic bandgap structure and printed circuit board having the same | |
| TW200945657A (en) | Antenna device | |
| US8314341B2 (en) | Printed circuit board having electromagnetic bandgap structure | |
| Bansode et al. | Simultaneous switching noise reduction in high speed circuits | |
| CN110444887B (en) | Antenna electromagnetic wave isolation device and isolation method | |
| KR20120019634A (en) | Structure of electromagnetic band gap for suppressing wide band noises | |
| Titz et al. | Co-design of integrated antennas and CMOS switches for future indoor personal networks at 60 GHz | |
| Arghiani | Simultaneous switching noise (SSN) suppression with a new Embedded Uniplanar Compact Electromagnetic Bandgap (EUCEBG) structure | |
| US20140306782A1 (en) | Resonance device | |
| Olivieri et al. | Miniaturization approach for EBG-based common mode filter and interference analysis | |
| WO2024067211A1 (en) | Radio frequency front-end circuit and electronic device | |
| US20230120584A1 (en) | Multiple antennas in a multi-layer substrate | |
| CN113260140B (en) | Electromagnetic shielding structure capable of realizing frequency reconstruction and electromagnetic shielding method | |
| CN113659350B (en) | Composite electromagnetic wave absorbing structure of ultra-high frequency ultra-wideband | |
| Harsoori et al. | 60 GHz microstrip filter in 0.13 µm RF CMOS technology |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |