CN113611588A - ICP plasma etching equipment capable of increasing plasma density - Google Patents
ICP plasma etching equipment capable of increasing plasma density Download PDFInfo
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- CN113611588A CN113611588A CN202110748459.XA CN202110748459A CN113611588A CN 113611588 A CN113611588 A CN 113611588A CN 202110748459 A CN202110748459 A CN 202110748459A CN 113611588 A CN113611588 A CN 113611588A
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- 238000001020 plasma etching Methods 0.000 title claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 56
- 238000007664 blowing Methods 0.000 claims abstract description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 25
- 230000007246 mechanism Effects 0.000 claims description 12
- 238000012546 transfer Methods 0.000 claims description 12
- 230000000087 stabilizing effect Effects 0.000 claims description 11
- 230000008878 coupling Effects 0.000 claims description 10
- 238000010168 coupling process Methods 0.000 claims description 10
- 238000005859 coupling reaction Methods 0.000 claims description 10
- 239000000428 dust Substances 0.000 claims description 8
- 238000001816 cooling Methods 0.000 claims description 4
- 238000005057 refrigeration Methods 0.000 claims description 3
- 238000007514 turning Methods 0.000 claims description 2
- 238000004804 winding Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 abstract description 38
- 230000000694 effects Effects 0.000 abstract description 26
- 230000017525 heat dissipation Effects 0.000 abstract description 14
- 238000000034 method Methods 0.000 abstract description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 9
- 230000008569 process Effects 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 210000002381 plasma Anatomy 0.000 description 28
- 239000007789 gas Substances 0.000 description 18
- 238000009616 inductively coupled plasma Methods 0.000 description 15
- 238000012544 monitoring process Methods 0.000 description 9
- 238000010884 ion-beam technique Methods 0.000 description 6
- 239000000498 cooling water Substances 0.000 description 5
- 235000017166 Bambusa arundinacea Nutrition 0.000 description 4
- 235000017491 Bambusa tulda Nutrition 0.000 description 4
- 241001330002 Bambuseae Species 0.000 description 4
- 235000015334 Phyllostachys viridis Nutrition 0.000 description 4
- 239000011425 bamboo Substances 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 230000005389 magnetism Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012806 monitoring device Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3343—Problems associated with etching
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Abstract
The invention discloses ICP plasma etching equipment capable of increasing plasma density, and relates to the technical field of semiconductor manufacturing. The substrate can rotate through the spiral groove, so that plasma can be bombarded on the surface of the substrate uniformly, the etching effect is better, heat which is not dissipated by a nitrogen heat dissipation method is dissipated again through the cooperation of the blowing component and the heat exchange component, the baffle is rotated firstly and then transversely moved, the substrate can be shielded, meanwhile, the baffle does not occupy more space in the movement process, and the substrate has a better practical effect.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to ICP plasma etching equipment capable of increasing plasma density.
Background
Etching is used in semiconductor manufacturing, and ICP plasma is also called inductively coupled plasma.
For example, the ICP plasma etcher disclosed in Chinese patent CN202011300038.2 comprises a body, a communicating pipe is fixedly installed on the upper surface of the body, air inlets are fixedly installed on two sides of the communicating pipe, the body, the communicating pipe and the air inlets are communicated, an iron core is fixedly installed on the top end of the body, a lead is fixedly sleeved outside the iron core, a shielding pipe is fixedly sleeved on the upper part inside the body, and a coupling coil is fixedly sleeved outside the shielding pipe, the ICP plasma etcher, when the plasma density is improved by increasing the current of the coupling coil, the magnetic force of the iron core is increased because the current of the lead is increased along with the coupling coil at the same time, at the moment, the substrate base moves upwards because the substrate base is balanced from the stress to the upward attractive force, the plasma moving distance is shortened while the plasma density is increased, and the probability of collision between plasmas is reduced, so that the etching effect is increased.
However, in the etching process of the device in the cited document, the situation that the effect of etching operation is poor due to the fact that plasmas are not uniformly bombarded on the surface of the substrate can occur, meanwhile, when the device is used for a long time, the heat dissipation effect is poor, and the situation that the device cannot operate can occur, and meanwhile, when the baffle is arranged to shield unstable ion beams, a large rotating area is often needed, more space of the device is wasted, and the practicability is poor, so that the device is improved on the basis of original equipment of the cited comparison document.
Disclosure of Invention
The invention aims to provide ICP plasma etching equipment capable of increasing plasma density, which is provided with a spiral groove, so that a substrate can rotate, the plasma can be bombarded on the surface of the substrate uniformly, the etching effect is better, heat which is not dissipated by a nitrogen heat dissipation method is dissipated again by matching with a blowing part and a heat exchange part, the baffle is rotated firstly and then transversely moved, so that the substrate can be shielded, meanwhile, the baffle does not occupy more space in the movement process, the ICP plasma etching equipment has a better practical effect, the problem that the plasma is not uniformly bombarded on the surface of the substrate to cause poor etching operation effect is solved, meanwhile, when an engine body is used for a long time, the heat dissipation effect is poor, the device can not run, and when the baffle is arranged to shield unstable ion beams, often need great rotatory region, wasted the more space of organism, cause the not good problem of practicality.
In order to achieve the purpose, the invention provides the following technical scheme: the utility model provides an ICP plasma etching equipment of multiplicable plasma density, includes organism, air inlet, coupling coil, substrate, cooling tube, spring and substrate base, fixed mouthful has been seted up to the inner wall of organism, the upper surface of spring is provided with the connecting block, the upper surface dead axle of connecting block rotates and is connected with the commentaries on classics piece, the upper surface of commentaries on classics piece with the lower fixed surface of substrate base is connected, the fixture block has been cup jointed on the surface of commentaries on classics piece, the surface of fixture block with the inner wall fixed connection of fixed mouthful, the inner wall fixedly connected with slider of fixture block, the helicla flute has been seted up on the surface of commentaries on classics piece, the slider with helicla flute sliding connection, the inner wall of organism be provided with be used for right the substrate shelters from sheltering from the mechanism.
Optionally, the shielding mechanism includes an electric push rod, a side of the electric push rod is fixedly connected with a side of the machine body, a sliding opening through which the telescopic part of the electric push rod passes and slides is formed in the right side of the machine body, a supporting block is fixedly connected to the telescopic part of the electric push rod, and a baffle is hinged to the left side of the supporting block through a support, and the shielding mechanism further includes a rotating part.
Optionally, the side of the machine body is provided with a monitoring device, and the side of the machine body is provided with a blowing component.
Optionally, the blowing part comprises a heat absorbing sheet, the heat absorbing sheet is arranged on the side face of the machine body, a shell is fixedly connected to the side face of the machine body, a fan is arranged on the inner wall of the shell, an air outlet is formed in the side face of the shell, and a dust cover is arranged on the right side of the shell.
Optionally, a heat exchange component is arranged on the surface of the machine body.
Optionally, the heat transfer part includes the heat transfer case, the upper surface of heat transfer case with the lower fixed surface of organism is connected, the inner wall of heat transfer case is provided with the water tank, the one end of water tank is passed through the fixed intercommunication of water pump and is had the heat exchange tube, the heat exchange tube is winding form and is provided with a plurality of turnings, the tip of heat exchange tube with the fixed intercommunication of the other end of water tank, the inner wall of heat transfer case is provided with the refrigeration piece.
Optionally, the rotating part comprises a fixed plate, a right side fixedly connected with connecting rod of the fixed plate, the right side of the connecting rod is fixedly connected with the inner wall of the machine body, an arc-shaped groove and a transverse groove are formed in the surface of the fixed plate, the arc-shaped groove is communicated with the transverse groove, a first sliding column and a second sliding column are fixedly connected with the surface of the baffle, and the first sliding column and the second sliding column are respectively connected with the inner wall of the arc-shaped groove and the inner wall of the transverse groove in a sliding mode.
Optionally, the inner wall of the machine body is provided with a stabilizing cylinder, a ball is arranged inside the stabilizing cylinder, and the lower surface of the stabilizing cylinder is provided with an air outlet.
Compared with the prior art, the invention has the following beneficial effects:
firstly, the substrate base is attracted to move upwards through the magnetic field, the rotating block is driven to move upwards through the upward movement of the substrate base, the rotating block moves upwards through the rotating block, the rotating block rotates and moves upwards relative to the clamping block due to the sliding relation between the sliding block and the spiral groove, and the position of the sliding block is fixed, so that the rotating block rotates and moves upwards relative to the clamping block, and the substrate is driven to rotate through the rotation of the clamping block.
Secondly, the baffle plate deflects by using the sliding column II as the center of a circle through the operation of the telescopic part of the electric push rod, when the sliding column enters the transverse groove, the baffle is driven to transversely move to shield the substrate, by the way that the baffle plate rotates firstly and then translates, on one hand, the substrate is shielded, so that the shielding of the baffle plate on the substrate is removed after the ion beam is stabilized, the etching quality is improved, and the efficiency of the etching operation, when the utility model is used, the utility model is rotated and contracted at the inner wall of the machine body, the etching effect is not affected, the use of the user is shielded, the practicability is better, by arranging the monitoring equipment, the etching operation can be monitored in real time by a user conveniently, and the device is prevented from being used for a long time, the situation that the device cannot operate due to the influence of a series of factors such as overhigh temperature and the like can be taken by a user in time according to the monitoring equipment.
The heat absorbing sheet is arranged, so that heat generated by the coupling coil during working can be absorbed onto the heat absorbing sheet, and then the heat absorbing sheet is cooled through the fan, so that the air flow rate on the surface of the heat absorbing sheet is accelerated, the generated plasma is stable when the device is used for a long time, cooling water in the water tank is injected into the heat exchange pipe through the water pump to perform heat exchange operation on the substrate base, the heat radiating pipe and the lower part of the machine body, and the water is re-injected into the water tank after the heat exchange is completed, so that a circulating heat exchange effect is achieved.
The round balls are arranged, so that when etching gas is introduced into the machine body from the gas inlet, the etching gas flows into the machine body through the round balls in an intermittent manner, the etching gas can be uniformly dispersed when the etching gas flows out of the stabilizing cylinder, and the gas pressure can be uniformly distributed, so that good uniformity of the etching process can be obtained.
Drawings
FIG. 1 is a front view of the structure of the present invention in a first state;
FIG. 2 is a front view of the fixture block, the rotary block, the slide block and the spiral groove structure of the present invention;
FIG. 3 is a bottom cross-sectional view of the heat exchange member configuration of the present invention;
FIG. 4 is an isometric view of a structure of the present invention;
fig. 5 is a second state elevation view of the inventive structure.
In the figure: 1. a body; 2. an air inlet; 3. a coupling coil; 4. a substrate; 5. a radiating pipe; 6. a spring; 7. a substrate base; 8. a fixed port; 9. a clamping block; 10. rotating the block; 11. a slider; 12. a helical groove; 13. an electric push rod; 14. a baffle plate; 15. monitoring equipment; 16. a heat absorbing sheet; 17. a housing; 18. a fan; 19. an air outlet; 20. a dust cover; 21. a heat exchange box; 22. a water tank; 23. a water pump; 24. a heat exchange pipe; 25. a refrigeration plate; 31. a support block; 32. a fixing plate; 33. a connecting rod; 34. an arc-shaped slot; 35. a transverse slot; 36. a sliding column I; 37. a sliding column II; 38. a stabilizing cylinder; 39. a ball; 40. an air outlet; 100. and (4) connecting the blocks.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1 to 5, the present invention provides a technical solution: an ICP plasma etching device capable of increasing plasma density comprises a machine body 1, an air inlet 2, a coupling coil 3, a substrate 4, a radiating pipe 5, a spring 6 and a substrate base 7, wherein a fixed opening 8 is formed in the inner wall of the machine body 1, a connecting block 100 is arranged on the upper surface of the spring 6, a rotating block 10 is connected to the upper surface of the connecting block 100 in a fixed-axis rotating mode, the upper surface of the rotating block 10 is fixedly connected with the lower surface of the substrate base 7, a clamping block 9 is sleeved on the surface of the rotating block 10, the surface of the clamping block 9 is fixedly connected with the inner wall of the fixed opening 8, a sliding block 11 is fixedly connected to the inner wall of the clamping block 9, a spiral groove 12 is formed in the surface of the rotating block 10, the sliding block 11 is slidably connected with the spiral groove 12, a shielding mechanism used for shielding the substrate 4 is arranged on the inner wall of the machine body 1, and etching gas is introduced into the machine body 1 through the air inlet 2, meanwhile, an ICP radio frequency power supply generates high-density plasma, a magnetic field is generated in the machine body 1, when the magnetism is increased, and the elastic force of the spring 6 is not enough to counteract the magnetic force, the magnetic field attracts the substrate base 7 to move upwards, the rotating block 10 is driven to move upwards through the upward movement of the substrate base 7, the rotating block 10 moves upwards through the rotating block 10, and due to the sliding relationship between the sliding block 11 and the spiral groove 12 and the fixed position of the sliding block 11, the rotating block 10 rotates and moves upwards relative to the clamping block 9, the substrate 4 is driven to rotate through the rotation of the clamping block 9, compared with the mode that a common device only drives the clamping block 9 to move upwards, in the mode, through the upward movement and the rotation of the substrate 4, the plasma is uniformly bombarded on the surface of the substrate 4, the condition that the etching operation effect is poor due to the non-uniform distribution of the plasma is avoided, and through the arrangement of a shielding mechanism, in this way, the shielding mechanism is rotated and then translated, and by this way, on one hand, the substrate 4 is shielded, so that after the ion beam is stabilized, the shielding of the shielding mechanism on the substrate 4 is removed, thereby improving the etching quality and the etching operation efficiency, and meanwhile, by this way of rotation and translation, compared with the common way of directly rotating to shield, the common way usually needs a larger rotating area, so that when a user is required to manufacture the machine body 1, a larger area is manufactured for the shielding mechanism to rotate, thereby wasting redundant material resources, the practicability is not good, when the method is used, the rotating and shrinking are at the inner wall of the machine body 1, the etching effect is not affected, the user can shield by using, the practicability is better, by setting the monitoring device 15, the user can conveniently monitor the etching operation in real time, and the device is prevented from being used for a long time, under the condition that the device cannot operate due to the influence of a series of factors such as overhigh temperature and the like, a user can take measures in time according to the monitoring equipment 15.
Further, the shielding mechanism comprises an electric push rod 13, the side surface of the electric push rod 13 is fixedly connected with the side surface of the machine body 1, a sliding opening which is used for the telescopic part of the electric push rod 13 to penetrate and slide with the electric push rod is formed in the right side of the machine body 1, a supporting block 31 is fixedly connected with the telescopic part of the electric push rod 13, a baffle 14 is hinged to the left side of the supporting block 31 through a support, and the shielding mechanism further comprises a rotating part which drives the supporting block 31 and the baffle 14 to move transversely through the operation of the telescopic part of the electric push rod 13.
Further, the side of the machine body 1 is provided with the monitoring equipment 15, the side of the machine body 1 is provided with the blowing component, and by arranging the monitoring equipment 15, a user can conveniently monitor etching operation in real time, so that the condition that the device cannot operate due to the influence of a series of factors such as overhigh temperature and the like when the device is used for a long time is avoided, and the user can take measures in time according to the monitoring equipment 15.
Furthermore, the blowing part comprises a heat absorbing sheet 16, the heat absorbing sheet 16 is arranged on the side face of the machine body 1, a shell 17 is fixedly connected to the side face of the machine body 1, a fan 18 is arranged on the inner wall of the shell 17, an air outlet 19 is formed in the side face of the shell 17, a dust cover 20 is arranged on the right side of the shell 17, heat generated when the coupling coil 3 works can be absorbed onto the heat absorbing sheet 16 through the heat absorbing sheet 16, then the heat absorbing sheet 16 is cooled through the fan 18, the air flow rate on the surface of the heat absorbing sheet 16 is accelerated, the dust cover 20 is arranged, and external dust is prevented from invading into the shell 17, so that generated plasma is stable when the device is used for a long time, and normal use of the device is guaranteed.
Further, a heat exchange component is arranged on the surface of the machine body 1.
Further, the heat exchange component comprises a heat exchange box 21, the upper surface of the heat exchange box 21 is fixedly connected with the lower surface of the machine body 1, the inner wall of the heat exchange box 21 is provided with a water tank 22, one end of the water tank 22 is fixedly communicated with a heat exchange tube 24 through a water pump 23, the heat exchange tube 24 is wound and provided with a plurality of corners, the end part of the heat exchange tube 24 is fixedly communicated with the other end of the water tank 22, the inner wall of the heat exchange box 21 is provided with a refrigerating sheet 25, cooling water in the water tank 22 is injected into the heat exchange tube 24 through the water pump 23 to perform heat exchange operation on the lower parts of the substrate base 7, the radiating tube 5 and the machine body 1, the heat exchange tube 24 is provided with a plurality of corners, the contact area with the machine body 1 is increased, the heat exchange effect is better, the cooling water with high temperature is cooled through the refrigerating sheet 25 after heat exchange, and the water is refilled in the box 22, in order to reach circulation heat transfer effect, only input from cooling tube 5 through nitrogen gas because of general device and dispel the heat substrate base 7, but during long-time use, the radiating effect is not good, and the radiating time is longer, and this mode is through addding heat transfer part, when avoiding in time or the radiating effect weakens because of cooling tube 5 heat dissipation, high temperature can probably transmit to organism 1 on, and then influences the normal operating condition of this device.
Further, the rotating part includes a fixed plate 32, a connecting rod 33 is fixedly connected to the right side of the fixed plate 32, the right side of the connecting rod 33 is fixedly connected to the inner wall of the machine body 1, an arc-shaped groove 34 and a transverse groove 35 are formed in the surface of the fixed plate 32, the arc-shaped groove 34 is communicated with the transverse groove 35, a first slide post 36 and a second slide post 37 are fixedly connected to the surface of the baffle 14, the first slide post 36 and the second slide post 37 are respectively connected to the inner walls of the arc-shaped groove 34 and the transverse groove 35 in a sliding manner, the baffle 14 is deflected around the second slide post 37 by the sliding fit of the first slide post 36 and the arc-shaped groove 34 and the abutting relationship between the second slide post 37 and the right end of the transverse groove 35 through the operation of the electric push rod 13 when the first slide post 36 enters the transverse groove 35, the baffle 14 is driven to move transversely through the continuous operation of the electric push rod 13, the substrate 4 is masked.
Further, the inner wall of organism 1 is provided with stabilizes a section of thick bamboo 38, the inside of stabilizing a section of thick bamboo 38 is provided with ball 39, venthole 40 has been seted up to the lower surface of stabilizing a section of thick bamboo 38, through setting up ball 39 for when letting in the sculpture gas by air inlet 2 in to organism 1, through ball 39, form the intermittent type between the ball 39, supply the gas inflow, consequently when gaseous outflow stabilizes a section of thick bamboo 38, the sculpture gas can disperse evenly, and atmospheric pressure also evenly distributed, so can obtain good sculpture technology homogeneity.
The working principle is as follows: when the ICP plasma etching device capable of increasing the plasma density is used, etching is applied to semiconductor manufacturing, ICP plasma is called inductively coupled plasma, when the device is used, etching gas is introduced into the machine body 1 through the gas inlet 2, meanwhile, an ICP radio frequency power supply generates high-density plasma, a magnetic field is generated in the machine body 1, when the magnetism is increased, and the elastic force of the spring 6 is not enough to counteract the magnetic force, the magnetic field attracts the substrate base 7 to move upwards, the rotating block 10 is driven to move upwards through the upward movement of the substrate base 7, the rotating block 10 moves upwards through the sliding relation of the sliding block 11 and the spiral groove 12, the position of the sliding block 11 is fixed, the rotating block 10 rotates and moves upwards relative to the clamping block 9, the substrate 4 is driven to rotate through the rotation of the clamping block 9, compared with the mode that a common device only drives the clamping block 9 to move upwards, in the method, through the upward movement and the rotation of the substrate 4, the plasmas are bombarded on the surface of the substrate 4 uniformly, so that the condition that the etching operation effect is poor due to the uneven distribution of the plasmas is avoided;
through the operation of the telescopic part of the electric push rod 13, and because the sliding fit of the first sliding column 36 and the arc-shaped groove 34 and the abutting relation of the second sliding column 37 and the right end of the transverse groove 35, the baffle 14 deflects by taking the second sliding column 37 as the center of a circle, when the first sliding column 36 enters the transverse groove 35, the baffle 14 is driven to transversely move through the continuous operation of the electric push rod 13 to shield the substrate 4, in this way, the baffle 14 rotates firstly and then translates, on one hand, the substrate 4 is shielded through the mode of shielding the substrate 4, after the ion beam is stabilized, the shielding of the baffle 14 on the substrate 4 is removed, the etching quality and the etching operation efficiency are improved, meanwhile, through the mode of rotating and translating, compared with the common mode of directly rotating to shield, a common mode usually needs a larger rotating area, therefore, when a user needs to manufacture the machine body 1, the large area is manufactured for the baffle 14 to rotate, redundant material resources are wasted, the practicability is poor, when the device is used, the device is rotated and contracted at the inner wall of the machine body 1, the etching effect is not influenced, the use of a user is shielded, the practicability is better, the monitoring equipment 15 is arranged, the user can conveniently monitor the etching operation in real time, the condition that the device cannot operate due to the influence of a series of factors such as overhigh temperature and the like when the device is used for a long time is avoided, and the user can take measures in time according to the monitoring equipment 15;
through the arrangement of the heat absorbing sheet 16, heat generated by the working of the coupling coil 3 can be absorbed onto the heat absorbing sheet 16, then the heat absorbing sheet 16 is cooled through the fan 18, the air flow rate on the surface of the heat absorbing sheet 16 is accelerated, the dust cover 20 is arranged, and external dust is prevented from invading into the shell 17, so that the device can generate stable plasma when being used for a long time, the normal use of the device is ensured, cooling water in the water tank 22 is injected into the heat exchange tube 24 through the water pump 23, the heat exchange operation is carried out on the substrate base 7, the heat radiating tube 5 and the lower part of the machine body 1, the heat exchange tube 24 is provided with a plurality of corners, the contact area with the machine body 1 is increased, the heat exchange effect is better, the high-temperature cooling water is cooled through the refrigerating sheet 25 after heat exchange, and the water is re-injected into the water tank 22 again, so as to-and-fro, the circulating heat exchange effect is achieved, because the common device only conducts heat radiation from the heat radiating tube 5 through nitrogen, when the heat dissipation device is used for a long time, the heat dissipation effect is poor, the heat dissipation time is long, and the situation that the normal operation of the heat dissipation device is influenced due to the fact that high temperature can be transmitted to the machine body 1 when the heat dissipation of the heat dissipation pipe 5 is not timely dissipated or the heat dissipation effect is weakened is avoided by additionally arranging the heat exchange component;
by arranging the round balls 39, when etching gas is introduced into the machine body 1 from the gas inlet 2, the etching gas passes through the round balls 39 and forms intermittence among the round balls 39 to flow in, so that the etching gas can be uniformly dispersed when the gas flows out of the stabilizing cylinder 38, and the gas pressure can be uniformly distributed, so that good uniformity of the etching process can be obtained;
compared with a common device, the device has higher practicability, common etching equipment can cause the condition that the plasma is not uniformly bombarded on the surface of the substrate 4 in the etching process to cause poor etching operation effect, and the condition that the device cannot run can occur due to poor heat dissipation effect when the machine body 1 is used for a long time, and a larger rotating area is often needed when the baffle 14 is arranged to shield unstable ion beams, so that more space of the machine body 1 is wasted, and the practicality is poor, the device can rotate the substrate 4 through the arrangement of the spiral groove 12, so that the plasma can be bombarded on the surface of the substrate 4 more uniformly, the etching effect is better, meanwhile, the blowing part and the heat exchange part are matched to not dissipate heat finished by a nitrogen heat dissipation method, the heat is dissipated again, and the baffle 14 is rotated firstly, and then, the substrate 4 is shielded, and meanwhile, the baffle 14 does not occupy more space in the moving process, so that the device has better practicability.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (8)
1. The utility model provides an ICP plasma etching equipment of multiplicable plasma density, includes organism (1), air inlet (2), coupling coil (3), substrate (4), cooling tube (5), spring (6) and substrate base (7), its characterized in that: fixed mouthful (8) have been seted up to the inner wall of organism (1), the upper surface of spring (6) is provided with connecting block (100), the upper surface dead axle of connecting block (100) rotates and is connected with commentaries on classics piece (10), the upper surface of commentaries on classics piece (10) with the lower fixed surface of substrate base (7) is connected, fixture block (9) have been cup jointed on the surface of commentaries on classics piece (10), the surface of fixture block (9) with the inner wall fixed connection of fixed mouthful (8), the inner wall fixedly connected with slider (11) of fixture block (9), helicla flute (12) have been seted up on the surface of commentaries on classics piece (10), slider (11) with helicla flute (12) sliding connection, the inner wall of organism (1) is provided with and is used for right substrate (4) carry out the mechanism that shelters from.
2. An ICP plasma etching apparatus capable of increasing plasma density according to claim 1, wherein: the shielding mechanism comprises an electric push rod (13), the side face of the electric push rod (13) is fixedly connected with the side face of the machine body (1), a sliding opening used for enabling a telescopic part of the electric push rod (13) to penetrate and slide with the electric push rod is formed in the right side of the machine body (1), a supporting block (31) is fixedly connected with the telescopic part of the electric push rod (13), and the left side of the supporting block (31) is hinged to a baffle (14) through a support and further comprises a rotating part.
3. An ICP plasma etching apparatus capable of increasing plasma density according to any one of claims 1 or 2, wherein: the side of organism (1) is provided with supervisory equipment (15), the side of organism (1) is provided with the part of blowing.
4. An ICP plasma etching apparatus capable of increasing plasma density according to claim 3, wherein: the blowing component comprises a heat absorbing sheet (16), the heat absorbing sheet (16) is arranged on the side face of the machine body (1), a shell (17) is fixedly connected to the side face of the machine body (1), a fan (18) is arranged on the inner wall of the shell (17), an air outlet (19) is formed in the side face of the shell (17), and a dust cover (20) is arranged on the right side of the shell (17).
5. An ICP plasma etching apparatus capable of increasing plasma density according to any one of claims 1 or 2, wherein: the surface of the machine body (1) is provided with a heat exchange component.
6. An ICP plasma etching apparatus capable of increasing plasma density according to claim 5, wherein: the heat transfer part includes heat transfer case (21), the upper surface of heat transfer case (21) with the lower fixed surface of organism (1) is connected, the inner wall of heat transfer case (21) is provided with water tank (22), the one end of water tank (22) is passed through water pump (23) and is fixed the intercommunication and have heat exchange tube (24), heat exchange tube (24) are the winding form and are provided with a plurality of turnings, the tip of heat exchange tube (24) with the fixed intercommunication of the other end of water tank (22), the inner wall of heat transfer case (21) is provided with refrigeration piece (25).
7. An ICP plasma etching apparatus capable of increasing plasma density according to claim 2, wherein: the rotatable parts include fixed plate (32), the right side fixedly connected with connecting rod (33) of fixed plate (32), the right side of connecting rod (33) with the inner wall fixed connection of organism (1), arc wall (34) and transverse groove (35) have been seted up on the surface of fixed plate (32), arc wall (34) with transverse groove (35) are linked together, the fixed surface of baffle (14) is connected with traveller (36) and traveller two (37), traveller one (36) and traveller two (37) respectively with the inner wall sliding connection of arc wall (34) and transverse groove (35).
8. An ICP plasma etching apparatus capable of increasing plasma density according to claim 1, wherein: the inner wall of the machine body (1) is provided with a stabilizing cylinder (38), a round ball (39) is arranged inside the stabilizing cylinder (38), and the lower surface of the stabilizing cylinder (38) is provided with an air outlet (40).
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