CN113604880A - 一种用于方硅芯制备的生产设备 - Google Patents
一种用于方硅芯制备的生产设备 Download PDFInfo
- Publication number
- CN113604880A CN113604880A CN202110902197.8A CN202110902197A CN113604880A CN 113604880 A CN113604880 A CN 113604880A CN 202110902197 A CN202110902197 A CN 202110902197A CN 113604880 A CN113604880 A CN 113604880A
- Authority
- CN
- China
- Prior art keywords
- pouring
- silicon core
- furnace body
- cover
- cylinder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 79
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 31
- 238000010438 heat treatment Methods 0.000 claims abstract description 45
- 230000007246 mechanism Effects 0.000 claims abstract description 32
- 238000005266 casting Methods 0.000 claims description 37
- 239000010453 quartz Substances 0.000 claims description 34
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 34
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 20
- 229910002804 graphite Inorganic materials 0.000 claims description 20
- 239000010439 graphite Substances 0.000 claims description 20
- 239000002210 silicon-based material Substances 0.000 claims description 18
- 230000008018 melting Effects 0.000 claims description 12
- 238000002844 melting Methods 0.000 claims description 12
- 238000004321 preservation Methods 0.000 claims description 11
- 238000009413 insulation Methods 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 7
- 230000000712 assembly Effects 0.000 claims description 6
- 238000000429 assembly Methods 0.000 claims description 6
- 230000009194 climbing Effects 0.000 claims description 6
- 239000007787 solid Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 11
- 230000008569 process Effects 0.000 abstract description 8
- 238000007711 solidification Methods 0.000 abstract description 8
- 230000008023 solidification Effects 0.000 abstract description 8
- 238000001816 cooling Methods 0.000 abstract description 7
- 238000002360 preparation method Methods 0.000 abstract description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 239000011148 porous material Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000002775 capsule Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000010923 batch production Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110902197.8A CN113604880B (zh) | 2021-08-06 | 2021-08-06 | 一种用于方硅芯制备的生产设备 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110902197.8A CN113604880B (zh) | 2021-08-06 | 2021-08-06 | 一种用于方硅芯制备的生产设备 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN113604880A true CN113604880A (zh) | 2021-11-05 |
CN113604880B CN113604880B (zh) | 2022-07-12 |
Family
ID=78307437
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202110902197.8A Active CN113604880B (zh) | 2021-08-06 | 2021-08-06 | 一种用于方硅芯制备的生产设备 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN113604880B (zh) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102492980A (zh) * | 2011-12-16 | 2012-06-13 | 国电宁夏太阳能有限公司 | 一种多晶硅沉积用的硅芯的制备方法及装置 |
WO2013141473A1 (ko) * | 2012-03-20 | 2013-09-26 | (주)세미머티리얼즈 | 멀티-도가니 타입 실리콘 잉곳 성장 장치 |
CN109252217A (zh) * | 2018-11-26 | 2019-01-22 | 浙江晶阳机电有限公司 | 一种一炉多用的硅芯铸锭炉 |
CN209481849U (zh) * | 2018-11-26 | 2019-10-11 | 浙江晶阳机电有限公司 | 一种硅芯铸锭炉用保温筒提升装置 |
CN113046821A (zh) * | 2021-05-11 | 2021-06-29 | 宁国市华成金研科技有限公司 | 一种多工位定向凝固及单晶铸造炉 |
-
2021
- 2021-08-06 CN CN202110902197.8A patent/CN113604880B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102492980A (zh) * | 2011-12-16 | 2012-06-13 | 国电宁夏太阳能有限公司 | 一种多晶硅沉积用的硅芯的制备方法及装置 |
WO2013141473A1 (ko) * | 2012-03-20 | 2013-09-26 | (주)세미머티리얼즈 | 멀티-도가니 타입 실리콘 잉곳 성장 장치 |
CN109252217A (zh) * | 2018-11-26 | 2019-01-22 | 浙江晶阳机电有限公司 | 一种一炉多用的硅芯铸锭炉 |
CN209481849U (zh) * | 2018-11-26 | 2019-10-11 | 浙江晶阳机电有限公司 | 一种硅芯铸锭炉用保温筒提升装置 |
CN113046821A (zh) * | 2021-05-11 | 2021-06-29 | 宁国市华成金研科技有限公司 | 一种多工位定向凝固及单晶铸造炉 |
Also Published As
Publication number | Publication date |
---|---|
CN113604880B (zh) | 2022-07-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8123855B2 (en) | Device and process for growing Ga-doped single silicon crystals suitable for making solar cells | |
CN101892518B (zh) | 制造多晶锭的系统和方法 | |
CN110923810A (zh) | 大尺寸单晶硅等径生长过程中调控液面位置的装置及工艺 | |
CN106148742A (zh) | 一种真空深过冷快速凝固实验装置 | |
US20190078231A1 (en) | Hybrid crucible assembly for czochralski crystal growth | |
CN113604880B (zh) | 一种用于方硅芯制备的生产设备 | |
CN110923803B (zh) | 一种半导体硅材料耗材生长炉及硅材料制备方法 | |
JPS63166711A (ja) | 多結晶シリコン鋳塊の製造法 | |
CN112830670A (zh) | 一种石英玻璃管棒生产炉及石英玻璃管棒的生产方法 | |
CN210856408U (zh) | 一种设置有炉体升降机构的晶体生长炉 | |
CN107075717B (zh) | 用于防止熔体污染的拉晶机 | |
CN105772658B (zh) | 一种大尺寸镁合金铸锭浇注系统及方法 | |
CN105887187B (zh) | 一种硅单晶生长掺杂剂浓度稳定控制方法 | |
CN220999935U (zh) | 一种卤化物晶体生长用冷却装置 | |
CN214142610U (zh) | 一种用于拉制单晶硅棒的拉晶炉 | |
CN109811411B (zh) | 一种同时生长两块大尺寸蓝宝石单晶板材的系统及方法 | |
CN210916346U (zh) | 一种用于芯片制造的智能控温单晶炉 | |
CN209969542U (zh) | 一种浇注成型控料装置 | |
CN215976131U (zh) | 一种可改善硅单晶纵向电阻率石英坩埚 | |
CN118241302B (zh) | 导流组件、晶棒生长设备以及晶棒的制备方法 | |
CN214373764U (zh) | 一种锡合金标准样品制备设备 | |
CN221028762U (zh) | 晶体生长装置 | |
CN114045553B (zh) | 铸锭炉、铸锭晶体硅及其制备方法 | |
US10724796B2 (en) | Furnace for casting near-net shape (NNS) silicon | |
CN209923481U (zh) | 一种用于生长掺杂直拉晶体的掺杂罩 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: A production equipment for preparing square silicon cores Effective date of registration: 20230518 Granted publication date: 20220712 Pledgee: Industrial Bank Co.,Ltd. Hohhot Branch Pledgor: Inner Mongolia Heguang new energy Co.,Ltd. Registration number: Y2023150000074 |
|
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: 010000 North Siyuan Middle Road West Ruyi Street South, Shaerqin Industrial Zone, Hohhot Economic and Technological Development Zone, Inner Mongolia Autonomous Region Patentee after: Inner Mongolia Heguang New Energy Co.,Ltd. Country or region after: China Address before: 010000 3007-2, main building, map review center, Kaifang street, ShaErQin Industrial Zone, Hohhot Economic and Technological Development Zone, Inner Mongolia Autonomous Region Patentee before: Inner Mongolia Heguang new energy Co.,Ltd. Country or region before: China |