CN113604874A

CN113604874A - Vapor phase epitaxy system and maintenance operation method thereof

Info

Publication number: CN113604874A
Application number: CN202110845179.0A
Authority: CN
Inventors: 林桂荣
Original assignee: Chu Yun Precision Technology Shanghai Co ltd
Current assignee: Chu Yun Precision Technology Shanghai Co ltd
Priority date: 2021-07-26
Filing date: 2021-07-26
Publication date: 2021-11-05
Anticipated expiration: 2041-07-26
Also published as: CN113604874B

Abstract

The invention provides a vapor phase epitaxy system, which comprises a carrying disc supporting device, a cover body, a reaction chamber, an air supply system and an exhaust chamber, wherein the carrying disc supporting device penetrates through the cover body, and the cover body is connected with the carrying disc supporting device; the reaction chamber comprises an inner chamber and an outer chamber, the inner chamber is a reaction cavity, and the inner chamber is arranged in the outer chamber; the gas supply system is positioned at one end part of the reaction chamber; the inner chamber comprises a first split and a second split, the first split is close to the gas supply system, and the second split is far away from the gas supply system; the exhaust chamber and the outer chamber are stacked, the exhaust chamber is sealed and isolated from the outer chamber, and the inner chamber is connected with the exhaust chamber; an opening is arranged at one end of the exhaust chamber far away from the gas supply system, and the inner chamber is movably arranged in the outer chamber and the exhaust chamber. By introducing the inner chamber with the split structure and the lifting structure, the split part of the inner chamber is only required to be replaced during maintenance, the whole pipe replacement is not required, the equipment maintenance is facilitated, the maintenance flow can be simplified, and the equipment utilization rate and the yield are improved.

Description

Vapor phase epitaxy system and maintenance operation method thereof

Technical Field

The invention relates to the technical field of semiconductors, in particular to an epitaxial growth technology, and particularly relates to a vapor phase epitaxy system and a maintenance operation method thereof.

Background

Third generation semiconductor materials, such as group III-V compound semiconductors, have the advantages of forbidden bandwidth, high electron saturation drift rate, high breakdown field strength, high radiation resistance, small dielectric constant, good thermal stability, stable chemical properties, and the like. It is widely used in various semiconductor devices such as Light Emitting Diodes (LEDs), Laser Diodes (LDs), and electronic devices including high power, high frequency, high temperature transistors and integrated circuits.

Vapor phase epitaxy processes are common processes for growing group III-V semiconductors and include Metal Organic Chemical Vapor Deposition (MOCVD), high temperature high pressure synthesis, Molecular Beam Epitaxy (MBE), Hydride Vapor Phase Epitaxy (HVPE), and the like. It has the advantages of high growth rate, simple equipment and low preparation cost. For example, in a hydride vapor phase epitaxy process, a group III-V semiconductor is formed by reacting a hot, gaseous metal halide (e.g., GaCl or AlCl) with a group V gas (e.g., NH 3).

The existing vapor phase epitaxy system generally adopts a monomer type quartz cavity, and in the design of a large-size and mass-production reaction cavity, the heating area of the cavity is often required to be lengthened to ensure uniform radial transfer temperature, so that the feeding and discharging are long in time and inconvenient to maintain. In addition, in the vapor phase epitaxy production process, the precursor gas is diffused into the whole reaction chamber to be uniformly mixed after entering the reaction chamber through the gas inlet channel, parasitic reaction can occur on the inner wall of the reaction chamber and the substrate tray to deposit parasitic deposits, which can affect temperature control, substrate surface cleanliness and the like, and further affect the yield of epitaxial wafers. In the prior art, before each growth, a reaction chamber and a substrate tray need to be subjected to gas etching reaction and high-temperature baking through a process program to realize self-cleaning, and after a certain period, the whole quartz furnace tube is cleaned through periodic large maintenance. The cleaning process described above takes up growth time, resulting in low equipment utilization and requiring a long recovery process after periodic large maintenance. This problem is particularly acute for large-sized reaction chambers.

Therefore, there is a need for a new vapor phase epitaxy system that solves the above problems.

Disclosure of Invention

In view of the above-mentioned shortcomings of the prior art, the present invention provides a vapor phase epitaxy system and a maintenance operation method thereof, which are used to solve the problems of inconvenient maintenance and low utilization rate of the large-sized reaction chamber in the prior art.

To achieve the above and other related objects, the present invention provides a vapor phase epitaxy system comprising:

the carrying disc supporting device is used for supporting a carrying disc positioned at the top of the carrying disc supporting device;

the carrying disc supporting device penetrates through the cover body, and the cover body is connected with the carrying disc supporting device;

the reaction chamber comprises an inner chamber and an outer chamber, the inner chamber is a reaction cavity, and the inner chamber is arranged in the outer chamber;

the gas supply system is positioned at one end part of the reaction chamber and is used for supplying gas to the inner chamber;

the inner chamber comprises a first split body and a second split body which are detachably connected, the first split body is close to the gas supply system, and the second split body is far away from the gas supply system;

the exhaust chamber is stacked with the outer chamber and is arranged at one end of the outer chamber, which is far away from the gas supply system, the exhaust chamber is sealed and isolated from the outer chamber, and the inner chamber is connected with the exhaust chamber; the one end that the air discharge room kept away from air supply system is equipped with the opening, the lid is used for right the opening of air discharge room carries out the gas tightness switching, interior cavity movably set up in outer cavity with in the air discharge room.

Optionally, the boat is located in the first body.

Optionally, an external heater is provided in the outer chamber.

Optionally, an internal heater is disposed in the tray supporting device at a position close to the tray, and the tray and the internal heater are located in the first split body.

Optionally, the internal heater comprises a planar heater located at the top of the carrier tray support and an annular heater nested at the periphery of the carrier tray support near the top.

Optionally, the first sub-body and the second sub-body are connected by a fitting structure.

More optionally, the engagement formation comprises an undulating contact interface where the first and second sub-bodies mutually engage.

Optionally, the number of said mosaic formations is 3 to 8.

Optionally, the vapor phase epitaxy system further comprises a rotating lifting assembly, and the rotating lifting assembly drives the carrying disc supporting device to move along the axial direction of the inner chamber, so that the carrying disc is moved along the axial direction of the inner chamber.

More optionally, the rotating and lifting assembly further includes a rotating mechanism for driving the carrier disc to rotate around the axial direction of the inner chamber.

Optionally, the material comprising the outer chamber comprises a metallic material.

Optionally, the material of the first sub-body constituting the inner chamber comprises one or more of quartz, silicon carbide, aluminum oxide, boron nitride, graphite, silicon carbide coated graphite, tantalum nitride coated graphite.

Optionally, the exhaust chamber comprises an exhaust ring and an exhaust line; the exhaust ring is connected to the inner chamber and used for guiding residual gas to be exhausted from the exhaust pipelines, and the number of the exhaust pipelines is not less than 2.

The invention also provides a maintenance operation method of the vapor phase epitaxy system, which comprises the following steps:

a) providing a vapor phase epitaxy system according to any of the preceding aspects; during epitaxial growth, the carrying disc loaded with the substrate to be processed is arranged at the top of the carrying disc supporting device, the cover body is in a sealed closed state, process gas is introduced into the inner cavity, and vapor phase epitaxial deposition is carried out on the substrate held by the carrying disc;

b) when the reaction chamber is maintained, the cover body is opened, the cover body and the inner cavity on one side of the cover body move axially along the outer cavity, the inner cavity is conveyed out of the outer cavity, the first split body and the second split body of the inner cavity are separated, and the first split body of the inner cavity is cleaned and maintained.

As described above, the vapor phase epitaxy system and the maintenance operation method thereof provided by the invention have the following beneficial effects: the vapor phase epitaxy system provided by the invention can directly replace the split part of the inner chamber during maintenance by introducing the inner chamber with the split structure and the inner chamber lifting structure, so that the equipment maintenance is facilitated, the maintenance flow can be greatly simplified, and the equipment utilization rate and the yield are improved. The arrangement of the double heating devices of the external heater and the internal heater can obviously improve the radial temperature uniformity, reduce the longitudinal length of the furnace body, shorten the feeding and discharging time, reduce the deposition of reactants in the cavity and contribute to improving the process stability.

Drawings

Fig. 1 is a schematic cross-sectional view of a vapor phase epitaxy system according to a first embodiment of the invention.

Fig. 2 is a schematic cross-sectional view of a detached blade support device of a vapor phase epitaxy system according to an embodiment of the invention.

Fig. 3 is a schematic cross-sectional view of a vapor phase epitaxy system separating an inner chamber and a carrier tray support device according to an embodiment of the invention.

Fig. 4 is a schematic perspective view of an inner chamber portion provided in one embodiment of the present invention.

Fig. 5 is a bottom view in the direction AA' of fig. 4.

Fig. 6 is a side view of the area B in fig. 5 in the direction of the arrow.

Description of the element reference numerals

101 carrying disc supporting device

102 carrying disc

103 inner chamber

103a first split

103b second section

104 outer chamber

105 first cover body

106 second cover body

108 external heater

109 internal heater

110 air inlet pipeline

111 air inlet flange

112 exhaust chamber

112a exhaust ring

113 exhaust line

114 rotating lift assembly

Detailed Description

The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.

Please refer to fig. 1 to 6. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the drawings only show the components related to the present invention rather than being drawn according to the number, shape and size of the components in actual implementation, and the form, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated. And not all structures are shown in the drawings to simplify the drawing.

In the prior art, a conventional vapor phase epitaxy chamber requires regular maintenance of a quartz chamber, and a gas etching reaction and a high temperature baking (i.e., in-situ cleaning) are generally performed through a process procedure to perform self-cleaning. After a certain period, the whole quartz furnace tube is cleaned again. The single chamber is not easy to pick and place sheets and to periodically maintain clean during normal operation. In addition, after periodic large maintenance, a long recovery process is required. This problem is particularly acute for large-sized reaction chambers. The inventor provides an improvement scheme through long-term research. The invention can obviously improve the problems by introducing the inner chamber with a split structure and the lifting structure of the inner chamber.

Example one

Fig. 1 shows a schematic cross-sectional view of a vapor phase epitaxy system 100 of the present embodiment. The reaction chamber of the vapor phase epitaxy system 100 comprises a carrying disc support device 101, a cover body, a reaction chamber, a gas supply system and an exhaust chamber 112; the tray supporting device 101 is used for supporting a tray 102 positioned at the top of the tray supporting device 101, the tray supporting device 101 penetrates through the cover body, and the cover body is connected with the tray supporting device 101; the reaction chamber comprises an inner chamber 103 and an outer chamber 104, the inner chamber 103 is a reaction chamber, and the inner chamber 103 is arranged in the outer chamber 104; the gas supply system is positioned at one end part of the reaction chamber and is used for supplying gas to the inner chamber 103; the inner chamber 103 comprises a first split body 103a and a second split body 103b which are detachably connected, namely the first split body 103a and the second split body 103b can be detached when needed, the first split body 103a is close to the gas supply system, and the second split body 103b is far away from the gas supply system; the exhaust chamber 112 and the outer chamber 104 are stacked and arranged at one end of the outer chamber 104 far away from the air supply system, the exhaust chamber 112 is hermetically isolated from the outer chamber 104, and the inner chamber 103 is connected with the exhaust chamber 112; an opening is formed at one end of the exhaust chamber 112, which is far away from the air supply system, the cover body is used for performing air-tight opening and closing on the opening of the exhaust chamber 112, and the inner chamber 103 is movably arranged in the outer chamber 104 and the exhaust chamber 112, namely, the end opening part of the inner chamber 103 is positioned at the same side as the end opening part of the exhaust chamber 112; the cover may include a first cover 105 and a second cover 106, the first cover 105 is located on a side of the second cover 106 away from the air supply system, and the first cover 105 and the second cover 106 are stacked and connected by a fastening device, for example, a bolt connection may be used. A first sealing surface is formed between the first cover 105 and the second cover 106, and a second sealing surface is formed between the second cover 106 and the exhaust chamber 112.

As an example, the exhaust chamber 112 comprises an exhaust ring 112a and an exhaust duct 113; the exhaust ring 112a is connected to the inner chamber 103 for guiding the residual gas to be exhausted from the exhaust line 113 without forming reaction product powder in the inner chamber 103; preferably, the exhaust chamber 112 is provided with two or more exhaust lines 113, so as to avoid interruption of epitaxial growth due to blockage of the exhaust lines, further prolonging the growth duration.

As an example, the boat support 101 passes through the first cover 105 and the second cover 106, the first cover 105 is connected to the boat support 101, the boat support 101 is movably disposed in the inner chamber 103, and the boat 102 is disposed at an end of the boat support 101 and configured to support a substrate during a process. The carrier support 101 may further include a rotating lift assembly 114, and the rotating lift assembly 114 may further include a rotating mechanism for rotating the carrier 102 around the axial direction of the inner chamber 103. The rotating lift assembly 114 may drive the carrier support 101 to axially move the carrier 102 along the inner chamber 103 and rotate, and the axial movement of the rotating lift assembly 114 facilitates the transfer of the carrier 102 and the substrate into and out of the inner chamber 103. When the fastening means between the first cover 105 and the second cover 106 is opened, and the first sealing surface is opened, the first cover 105 of the inner chamber 103 can be moved axially by the rotating lift assembly 114 together with the carrier tray support 101. The inner chamber 103 is movably disposed in the outer chamber 104 and the exhaust chamber 112, the rotating lift assembly 114 drives the carrier support 101 and the inner chamber 103 to move axially along the outer chamber 104 and the exhaust chamber 112, and the axial movement of the rotating lift assembly 114 facilitates transferring the inner chamber 103 into and out of the outer chamber 104 and the exhaust chamber 112. When the second lid 106 is opened, the second sealing surface is opened, and the second lid 106 of the exhaust chamber 112 can move axially by the rotary lift assembly 114 together with the first lid 105 of the inner chamber 103, the exhaust ring 112a of the second lid, the inner chamber 103 of the exhaust ring 112a, and the boat support 101.

As an example, as shown in fig. 4, the inner chamber 103 includes a first division 103a and a second division 103b, the first division 103a is close to the gas supply system, and the second division 103b is far from the gas supply system. And in one example, the first component 103a and the second component 103b are connected by a fitting structure (i.e., edges of the two are fitted to each other to achieve connection). The first and second sub-bodies 103a and 103b are realized by the fitting structure without using a foreign connection structure such as a screw, and thus, contamination due to the connection structure can be minimized. Specifically, in one example, as shown in fig. 5 to 6, the fitting structure includes an undulating contact interface where the first and second segments 103a and 103B are engaged with each other, where fig. 5 is a bottom view in the direction of AA' in fig. 4, and fig. 6 is a side view in the direction of an arrow in the region B in fig. 5. Fig. 5 and 6 show that the connection portion of the first and second divided

bodies

103a and 103b has a protrusion F1 and a recess F2 that are fitted to each other. The number of the above-described fitting structures to be fitted to each other is preferably 3 to 8 (inclusive), and this number of fitting structures can ensure tight fitting of the first and

second segments

103a and 103b, and can avoid a decrease in strength of the connection structure due to an excessive number of fitting structures.

In a preferred example, the connection position of the first and second sub-bodies 103a and 103b is located at a distance from the gas supply system that is greater than the distance of the boat 102 from the gas supply system, i.e., the boat 102 is located in the first sub-body 103 a. The above arrangement makes it possible to limit the dirty reaction region to the first sub-body 103a which is scheduled to be replaced at the time of maintenance.

As an example, the air supply system comprises an air intake pipe 110 and an air intake flange 111; the air inlet flange 111 is connected with the outer chamber 104 through a fastening device and used for sealing the reaction chamber, and the air inlet pipeline 110 is communicated with the inner chamber 103 to supply air to the inner chamber. Optionally, the gas inlet line 110 may supply one or more of a reactive gas, a cleaning gas, a shielding gas, or a carrier gas to the inner chamber 103.

By way of example, the inner chamber 103 is preferably composed of a material, but not limited to, one or more combinations of quartz, silicon carbide, alumina or boron nitride, graphite, silicon carbide coated graphite, and tantalum nitride coated graphite; the material forming the outer chamber 104 is preferably a metallic material, such as stainless steel. The materials of the first and second sub-bodies 103a, 103b may be the same or different, for example, the first sub-body 103a may be composed of a high temperature resistant material, preferably but not limited to, one or more of quartz, silicon carbide, alumina, boron nitride, graphite, silicon carbide coated graphite, and tantalum nitride coated graphite.

In one example, the outer chamber 104 is provided with water-cooling pipes, such as being disposed on the outer surface of the outer chamber 104, so as to prevent the inner high temperature from damaging the outer chamber 104 and isolate the outer high temperature from the outer environment.

Illustratively, the outer chamber 104 is provided with an external heater 108, and the external heater 108 is a hot wall external heater and is positioned on the outer wall of the inner chamber 103 to heat the inner chamber 103.

It should be noted that fig. 1 shows a vertical cavity structure, but in other embodiments of the present invention, a horizontal cavity structure may be adopted.

Example two

The vapor phase epitaxy system in the present embodiment has substantially the same structure as the vapor phase epitaxy system 100 in the first embodiment, and the difference between the first embodiment in which the external heater 108 is provided only in the outer chamber 104 is a single heater, whereas the vapor phase epitaxy system in the present embodiment employs a dual heating system. In particular, with continued reference to fig. 1 (for simplicity of illustration, the figures are not separately illustrated due to the small differences between the first and second embodiments), in this embodiment, an external heater 108 is disposed in the outer chamber 104, and the external heater may also be a hot wall type external heater disposed on the outer wall of the inner chamber 103 for heating the inner chamber 103, and an internal heater 109 is disposed in the tray supporting device 101 near the tray 102. In one example, the internal heater 109 includes a planar heater located at the top of the boat support 101 and an annular heater nested around the top periphery of the boat support 101 for directly heating the substrate on the boat 102. Alternatively, the connection position of the first and second sub-bodies 103a and 103b is located at a distance from the air supply system that is greater than the distance of the internal heater from the air supply system, i.e., the boat 102 and the internal heater 109 are located in the first sub-body 103 a. Compared with the scheme that the heater is only arranged on the outer wall of the chamber in the first embodiment, the invention reduces the longitudinal length of the furnace body through the external heater and the internal heater, simultaneously provides good radial temperature uniformity in the reaction zone, can shorten the feeding and discharging time, reduces the deposits of a reaction source in the cavity, heats the reaction chamber, has less low-temperature dead zones in the cavity, slows down the deposition of the tube wall, can realize continuous growth, does not need to introduce a self-cleaning process step after each furnace grows, and thus improves the equipment utilization rate.

By adopting the dual-heating, dual-sealing and dual-axial movement mechanism of the vapor phase epitaxy system, compared with the existing vapor phase epitaxy system, the yield can be expected to be increased by 30% in the same operation period, and the accuracy of temperature control and the yield of the substrate surface are also positively improved due to the reduction of deposits.

The invention can greatly improve the convenience of cleaning and maintaining the reaction cavity, further improve the process stability and has the expansibility of future mass production.

The invention also provides a maintenance method of the vapor phase epitaxy system in any one of the above schemes, which is used for maintaining the vapor phase epitaxy system after the vapor phase epitaxy system undergoes a certain epitaxy growth period, wherein each chamber of the vapor phase epitaxy system has different open and close states in different growth or maintenance processes.

(1) Epitaxial growth process

During epitaxial growth, as shown in fig. 1, the carrier plate 102 loaded with the substrate to be processed is disposed on the top of the carrier plate supporting device 101, the first cover 105 and the second cover 106 are both in a sealed closed state, the inner chamber 103 is filled with the process gas to deposit on the substrate held by the carrier plate 102, further, the carrier plate 102 is driven by the rotating lift assembly 114 to rotate around the axial direction of the inner chamber 103, and the process gas is drawn into the rotating gas flow and mixed with each other, so that the substance is deposited on the substrate held by the carrier plate 102.

(2) Substrate loading and unloading process

After the epitaxial growth is finished, as shown in fig. 2, the fastening device between the first cover 105 and the second cover 106 is opened, at this time, the first cover 105 is opened, the second cover 106 is still fixed at the opening portion on the end side of the exhaust chamber 112, so that the opening of the exhaust chamber is kept closed, the first cover 105, together with the carrier tray 102 and the substrate grown thereon (for example, by using the rotary lifting assembly 114), moves axially along one end of the inner chamber 103 away from the gas supply system, and is conveyed out of the inner chamber 103, so that the substrate grown by the vapor phase epitaxial system of this embodiment can be taken down, and the unloading of the substrate is completed; a new substrate to be processed is then placed on the boat 102 and moved axially along the inner chamber 103 toward the end of the gas supply system (e.g., also using the rotating lift assembly 114) and transferred into the inner chamber 103 to complete substrate loading.

Similarly, the replacement of the boat 102 can be accomplished as described above, and the boat to be cleaned can be independently cleaned outside the vapor phase epitaxy system.

(3) Process for chamber maintenance

In the vapor phase epitaxy process, a semiconductor thin film to be deposited on a substrate adheres to various members other than the substrate such as an inner wall of a chamber and a gas flow path, and a reactant adhering to the member other than the substrate becomes an unnecessary contaminant, and therefore, it is necessary to clean the contaminated member to remove the reactant. In the prior art, for example, HVPE equipment has a growth rate of 100um/h at most, and a quartz tube needs to be cleaned after growth is completed every time, and since a quartz tube with a single structure is relatively large and fragile, manual replacement is inconvenient, and the replacement frequency of the quartz tube needs to be reduced by a self-cleaning process inside a cavity, and after a certain period, the whole quartz tube needs to be replaced and cleaned. Because the prior art adopts in-situ cleaning in the furnace, the effective production time is occupied, and the equipment utilization rate is low.

In the embodiment of the present invention, the inner chamber 103 is a separate structure. The first sub-body 103a is located in the reaction zone, deposits are easy to adhere to the first sub-body 103a, and the second sub-body 103b is relatively clean, so that only the first sub-body 103a is needed to be replaced, and the whole tube does not need to be replaced. This undoubtedly reduces the maintenance difficulty, and makes the cleaning and replacement of the reaction chamber more convenient. As shown in fig. 3, the maintenance process may be that the second cover 106 is opened, and at this time, the second cover 106 is moved axially along the outer chamber 104 by the rotary lifting assembly 114 together with the first cover 105 on one side thereof, the exhaust ring 112a on the second cover 106, the inner chamber 103 on the exhaust ring 112a, and the tray support 101 in the inner chamber 103, so that the inner chamber 103 is transferred out of the outer chamber 104, the inner chamber 103 and the component to be cleaned therein (including the inner chamber furnace body itself) are replaced, for example, the first partition 103a and the second partition 103b of the inner chamber 103 are separated, and the first partition 103a of the inner chamber 103 is cleaned, for example, the replaced component is cleaned, and then replaced with a new component, and then the next round of epitaxial growth is performed. Because the inner chamber 103 in the embodiment of the present invention is a split structure, when the furnace tube is cleaned and maintained, only the first split 103a most easily contaminated in the inner chamber 103 needs to be treated, and the whole furnace tube does not need to be replaced and cleaned.

By adopting the split type inner chamber, the double-sealing and double-axial movement mechanism of the vapor phase epitaxy system, the replacement of spare parts is simpler and more convenient, and the step of a common self-cleaning process inside the cavity in the prior art can be omitted, so that the effective production time is further increased, and the utilization rate of equipment is improved.

In summary, the present invention provides a vapor phase epitaxy system, which includes a tray supporting device, a cover, a reaction chamber, a gas supply system and an exhaust chamber, wherein the tray supporting device is used for supporting a tray located on the top of the tray supporting device, the tray supporting device penetrates through the cover, and the cover is connected to the tray supporting device; the reaction chamber comprises an inner chamber and an outer chamber, the inner chamber is a reaction cavity, and the inner chamber is arranged in the outer chamber; the gas supply system is positioned at one end part of the reaction chamber and is used for supplying gas to the inner chamber; the inner chamber comprises a first split body and a second split body which are detachably connected, the first split body is close to the gas supply system, and the second split body is far away from the gas supply system; the exhaust chamber and the outer chamber are stacked and arranged at one end of the outer chamber far away from the gas supply system, the exhaust chamber is sealed and isolated from the outer chamber, and the inner chamber is connected with the exhaust chamber; the one end that the air discharge room kept away from air supply system is equipped with the opening, the lid is used for right the opening of air discharge room carries out the gas tightness switching, interior cavity movably set up in outer cavity with in the air discharge room. The vapor phase epitaxy system provided by the invention can directly replace the split part of the inner chamber during maintenance by introducing the inner chamber with the split structure and the inner chamber lifting structure, so that the equipment maintenance is facilitated, the maintenance flow can be greatly simplified, and the equipment utilization rate and the yield are improved. The arrangement of the double heating devices of the external heater and the internal heater can obviously improve the uniformity of radial temperature, reduce the longitudinal length of the furnace body, shorten the feeding and discharging time, reduce the deposition of reactants in the cavity and contribute to improving the process stability. The method can be used in epitaxial processes in the fields of integrated circuits, LEDs, solar cells and the like, is particularly suitable for hydride vapor phase epitaxy, and has great utilization value.

The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.

Claims

1. A vapor phase epitaxy system, comprising:

2. Vapor phase epitaxy system according to claim 1, wherein the boat is located in the first body.

3. A vapor phase epitaxy system according to claim 1, wherein an external heater is provided in the outer chamber, and an internal heater is provided in the carrier tray support adjacent to the carrier tray, the internal heater being located in the first split body.

4. The vapor phase epitaxy system of claim 3, wherein the internal heater comprises a planar heater located at a top of the susceptor support apparatus and an annular heater nested at a periphery of the susceptor support apparatus proximate the top.

5. The vapor phase epitaxy system of claim 1, wherein the first and second sub-bodies are connected by a fitting arrangement.

6. The vapor phase epitaxy system of claim 5, wherein the mating arrangement comprises an undulating contact interface where the first and second segments intermesh.

7. Vapor phase epitaxy system according to claim 6, characterised in that the number of mosaic structures is between 3 and 8.

8. The vapor phase epitaxy system of claim 1, wherein the material comprising the outer chamber comprises a metallic material; the material for forming the first split body of the inner chamber comprises one or more of quartz, silicon carbide, aluminum oxide, boron nitride, graphite, silicon carbide coated graphite and tantalum nitride coated graphite.

9. Vapor phase epitaxy system according to claim 1, wherein the exhaust chamber comprises an exhaust ring and an exhaust duct; the exhaust ring is connected to the inner chamber and used for guiding residual gas to be exhausted from the exhaust pipelines, and the number of the exhaust pipelines is not less than 2.

10. A method of maintenance operation of a vapor phase epitaxy system, comprising the steps of:

a) providing a vapor phase epitaxy system according to any one of claims 1 to 9; during epitaxial growth, the carrying disc loaded with the substrate to be processed is arranged at the top of the carrying disc supporting device, the cover body is in a sealed closed state, process gas is introduced into the inner cavity, and vapor phase epitaxial deposition is carried out on the substrate held by the carrying disc;