CN113589204B - Low-frequency magnetic domain noise suppression device and method for tunnel magnetoresistive sensor - Google Patents
Low-frequency magnetic domain noise suppression device and method for tunnel magnetoresistive sensor Download PDFInfo
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- CN113589204B CN113589204B CN202110763247.9A CN202110763247A CN113589204B CN 113589204 B CN113589204 B CN 113589204B CN 202110763247 A CN202110763247 A CN 202110763247A CN 113589204 B CN113589204 B CN 113589204B
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
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- G—PHYSICS
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Abstract
The invention provides a low-frequency magnetic domain noise suppression device and a method for a tunnel magnetic resistance sensor, wherein the suppression method is used for enabling the magnetization direction of a free layer to be parallel or antiparallel to the magnetization direction of a pinning layer by alternately applying magnetic fields with opposite directions around the tunnel magnetic resistance sensor at intervals; and then processing the acquired output data of the tunnel magneto-resistance sensor to obtain the equivalent noise of the tunnel magneto-resistance sensor, so as to inhibit low-frequency 1/f noise generated by magnetic domain disturbance. The invention solves the technical problems that the prior art needs to design a new magnetism gathering structure or a structure which needs to finely control materials in the processing process of a micro-electromechanical system (MEMS), increases the complexity of the process and has higher requirements on the stability of the materials and the structure, and can greatly improve the detection capability of a tunnel magneto-resistance sensor on a weak magnetic field, so that the tunnel magneto-resistance sensor can be suitable for the field of weak magnetic field detection, such as biological magnetic field detection, magnetic anomaly detection and the like.
Description
Technical Field
The invention relates to a low-frequency magnetic domain noise suppression device and method for a tunnel magnetoresistive sensor, and belongs to the technical field of high-performance magnetic field sensors.
Background
With the development of micro-electro-mechanical systems (MEMS) manufacturing processes, a direction is provided for miniaturization of magnetic detection systems. The tunnel magneto-resistance sensor (TMR) is a fourth generation magnetic sensor based on MEMS technology, has the characteristics of low power consumption, small size, high sensitivity and the like, and is hopeful to become a novel high-sensitivity magnetic sensor. But in the low frequency range, the intrinsic 1/f noise of the tunnel magneto-resistance sensor reduces the detection capability of the sensor, and limits the application of the sensor in the low-frequency weak magnetic field detection field.
The existing method for inhibiting the intrinsic 1/f noise of the tunnel magneto-resistance sensor mainly comprises the following steps: magnetic flux modulation techniques, chopping techniques, and materials and process aspects reduce intrinsic 1/f noise.
The magnetic flux modulation technology adopts micro-mechanical magnetic flux vibration and other means to modulate a low-frequency magnetic field to a high-frequency magnetic field, the high-frequency magnetic field is converted into an alternating current signal through a magneto-resistance sensor, and then the alternating current signal is analyzed to obtain the size of a measured magnetic field, so that the aim of inhibiting 1/f noise is fulfilled, and the defect that the stability of mechanical vibration is required to be improved and the modulation efficiency is difficult to guarantee is overcome.
Chopper technology achieves a modulated magnetic field by applying alternating magnetic fields or repeated saturation of a magnetic flux concentrator, which has the disadvantage of high power consumption and high noise in the high frequency range.
Noise is reduced from the aspects of materials and processes, and a proper soft magnetic layer is selected to keep smaller magnetic domains so as to inhibit 1/f noise; or by optimizing the annealing process to reduce defects of tunnel junctions (MTJs), stabilize magnetic domain structures to reduce noise, these techniques increase material requirements and process complexity, thereby increasing product costs.
In summary, the prior art needs to design a new magnetic focusing structure or a structure requiring fine control of materials during the mems processing, which increases the complexity of the process and has high requirements for stability of materials and structures.
Disclosure of Invention
The invention aims to solve the technical problems that a new magnetism gathering structure or a structure requiring fine control of materials is required in the MEMS processing process in the prior art, the complexity of the process is increased, and the requirements on the stability of the materials and the structure are high, and provides a low-frequency magnetic domain noise suppression method for a tunnel magneto-resistance sensor, which is a suppression technology suitable for the low-frequency 1/f noise of a magnetic sensor based on the tunnel magneto-resistance effect.
The invention provides a low-frequency magnetic domain noise suppression method for a tunnel magnetic resistance sensor, which is characterized in that magnetic fields with opposite directions are alternately applied around the tunnel magnetic resistance sensor at intervals, so that the magnetization direction of a free layer is parallel or antiparallel to the magnetization direction of a pinning layer; and then processing the acquired output data of the tunnel magneto-resistance sensor to obtain the equivalent noise of the tunnel magneto-resistance sensor, so as to inhibit low-frequency 1/f noise generated by magnetic domain disturbance.
A low-frequency magnetic domain noise suppression device for a tunnel magnetic resistance sensor comprises a pulse generation module, a sensor module and a data acquisition and analysis module,
the sensor module comprises a coil wound with a plurality of turns of wires, a tunnel magnetic resistance sensor is arranged in the center of the inside of the coil, the sensitive direction of the tunnel magnetic resistance sensor is parallel to the axial direction of the coil, the coil is formed by winding wires with even turns, the pulse generation module provides positive and negative pulses to be applied to the two ends of the plurality of turns of the coil, the inside of the plurality of turns of the coil alternately generates magnetic fields with opposite directions, and the generated magnetic fields can enable the magnetization directions of a free layer and a pinned layer of the tunnel magnetic resistance sensor to be kept parallel or antiparallel.
Preferably, the framework of the coil is made of non-magnetic materials.
Preferably, the multi-turn wire is a copper wire.
Preferably, the pulse generating module comprises a singlechip, a control switch chip and an adjustable boost chip, wherein the singlechip provides unidirectional pulses for the control switch chip, the control switch chip provides positive and negative pulses for the adjustable boost chip, and the adjustable boost chip outputs the positive and negative pulses to the multi-turn coil.
Preferably, the positive and negative pulses are connected to two ports of the multi-turn wire.
The data processing method adopted by the low-frequency magnetic domain noise suppression method for the tunnel magneto-resistance sensor comprises the steps of sampling the sensor output and obtaining the equivalent noise of the sensor, firstly, collecting the data output by the sensor, and when positive pulse arrives each time, sorting the data output by the sensor under the positive pulse period to obtain a curve, namely a positive pulse curve; similarly, a curve, namely a negative pulse curve, is obtained when a negative pulse arrives each time; and then, carrying out average value on the two curves to obtain the equivalent noise of the sensor.
Preferably, the positive pulse curve is obtained by averaging all data in one positive pulse period, equating the whole pulse period time to the mean point, and arranging a plurality of positive pulse period equivalent points in time sequence.
Preferably, the undershoot curve is obtained by averaging all data in one undershoot period, time-equalizing the whole undershoot period to the mean value point, and arranging a plurality of undershoot period equivalent points in time sequence.
The low-frequency magnetic domain noise suppression device and method for the tunnel magnetoresistive sensor have the beneficial effects that:
(1) The method does not need any change in the MEMS processing process, but improves the stability of magnetic domains of the magnetoresistive sensor in the working state by externally designing a coil and generating a bidirectional magnetic field through the external coil, suppresses 1/f noise in the low-frequency range of the tunnel magnetoresistive sensor, improves the detection capability of the sensor in the low-frequency range, and is used for meeting the application requirements of people on the tunnel magnetoresistive sensor.
(2) The invention has relatively simple structure, and a proper coil is selected, and the magnetoresistive sensor is arranged at the inner center of the coil.
(3) The structure of the invention has relatively low overall power consumption and relatively stable working state.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention.
In the drawings:
FIG. 1 is a schematic diagram of a low frequency domain noise suppression method for a tunnel magnetoresistive sensor according to the present invention;
FIG. 2 is a schematic diagram of the structure of a magnetoresistive sensor and coil placement;
FIG. 3 is an axial plan view schematic of a magnetoresistive sensor and coil placement;
FIG. 4 is a system transmission schematic diagram of the present method;
FIG. 5 is a positive and negative pulse applied to two ports of a coil;
FIG. 6 is a signal acquired in the time domain of a tunnel magnetoresistive sensor and a simple process, wherein the magnetoresistive sensor corresponds to a high output positive pulse output under the action of a positive pulse, the sensor corresponds to a low output negative pulse output under the action of a negative pulse, and the high output and the low output are averaged to obtain the final equivalent output of the magnetoresistive sensor;
FIG. 7 is a graph comparing power spectral density curves before and after processing by the present method;
in the figure, the 1-free layer, the 2-insulating layer, the 3-pinning layer, the 4-free layer sensitivity direction, the 5-pinning layer sensitivity direction, the 6-power supply, the 7-output voltage, the 8-coil, the 9-tunnel magneto-resistance sensor, the 10-wire, the 11-coil port No. one, the 12-coil port No. two, the 17-forward pulse, the 18-reverse pulse, the 19-positive pulse output, the 20-equivalent noise, the 21-negative pulse output, the 22-conventional processing power spectral density curve and the 23-equivalent power spectral density curve.
Detailed Description
The following describes the embodiments of the present invention in further detail with reference to the accompanying drawings:
the first embodiment is as follows: this embodiment is described with reference to fig. 1 to 7. In the low-frequency magnetic domain noise suppression method for the tunnel magnetoresistive sensor according to the present embodiment, magnetic fields with opposite directions are alternately applied around the tunnel magnetoresistive sensor 9 at intervals, so that the magnetization direction of the free layer 1 is parallel or antiparallel to the magnetization direction of the pinned layer 3; and then processing the acquired output data of the tunnel magneto-resistance sensor 9 to obtain the equivalent noise of the tunnel magneto-resistance sensor 9, so as to inhibit the low-frequency 1/f noise generated by magnetic domain disturbance.
The tunnel magnetoresistive sensor is based on an MTJ design, and the typical structure of the MTJ is a sandwich structure of a free layer 1, an insulating layer 2 and a pinned layer 3, wherein the magnetization direction 5 of the pinned layer 3 is fixed, and the magnetization direction 4 of the free layer 1 changes with an external magnetic field.
According to the method, the tunnel magneto-resistance sensor is enabled to work in a proper working mode to inhibit 1/f noise, a coil is used for generating a bidirectional magnetic field to stabilize disturbance of magnetic domains of the magneto-resistance sensor in a working state, and subsequent data processing is used for inhibiting the 1/f noise in a low-frequency range of the tunnel magneto-resistance sensor, so that the detection capability of the sensor in the low-frequency range is improved, and the method is used for meeting application requirements of people on the tunnel magneto-resistance sensor.
The low-frequency magnetic domain noise suppression method for the tunnel magnetoresistive sensor provided by the invention has the advantages that the tunnel magnetoresistive sensor 9 is placed in the multi-turn coil, positive and negative pulses are applied to the multi-turn coil, so that the multi-turn coil generates magnetic fields with opposite directions, wherein the sensitive direction of the tunnel magnetoresistive sensor 9 is parallel to the generated magnetic field direction, the magnetic field generated by the multi-turn coil enables the free layer 1 direction of the tunnel magnetoresistive sensor 9 in the multi-turn coil to turn over along the magnetic field direction, and the free layer magnetization direction 4 of the tunnel magnetoresistive sensor 9 and the magnetization direction 5 of the pinning layer are in a parallel or antiparallel state, so that the low-frequency 1/f noise generated by magnetic domain disturbance is reduced.
The utility model provides a low frequency magnetic domain noise suppression device to tunnel magneto resistance sensor, includes pulse generation module, sensor module and data acquisition and analysis module, the sensor module is including winding the coil 8 of multiturn wire, tunnel magneto resistance sensor 9 has been placed to the inside center department of coil 8, the sensitive direction of tunnel magneto resistance sensor 9 is parallel with the coil 8 axial, coil 8 is twined by the wire of even multiturn and forms, pulse generation module provides positive and negative pulse and applys at multiturn coil both ends, makes the inside magnetic field that produces the opposite direction of alternation of multiturn coil, and the magnetic field that produces is to be can make the magnetization direction of free layer 1 of tunnel magneto resistance sensor 9 and pinning layer 3 keep parallel or anti-parallel. As shown in fig. 2 and 3, the tunnel magneto-resistance sensor 9 is placed in the center inside the coil, so that the received magnetic field is strong enough and stable enough.
The coil 8 framework is made of nonmagnetic materials, copper wires are uniformly wound on the outer surface of the coil to form a multi-turn coil, and the number of turns of the coil is set according to the size of a magnetic field to be generated.
The pulse generation module consists of a singlechip, a control switch chip and an adjustable boost chip; the singlechip power consumption is lower, can output periodic high low level, and the high low level of singlechip output is converted into positive and negative pulse through control switch chip, as shown in fig. 5, sets up suitable pulse frequency, and the rethread adjustable boost chip guarantees to produce enough big electric current after the access coil, and the positive and negative pulse of output is connected into two ports of multiturn coil this moment, coil port 11 and No. two coil ports 12.
Finally, the acquired sensor output data is processed, the observation is carried out in the time domain or the frequency domain, and the data processing process is as follows: and (3) compressing the data, respectively extracting an output curve in a state that the free layer sensitive direction 4 is parallel to the pinning layer sensitive direction 5 and an output curve in an antiparallel state, and averaging the two curves to obtain the equivalent noise of the tunnel magnetoresistive sensor after the low-frequency 1/f noise is inhibited. As shown in fig. 6 and 7, it can be seen that this method can suppress disturbance of the low frequency magnetic domain of the tunnel magnetoresistive sensor.
The specific method for data processing comprises the following steps: collecting and processing data output by a sensor, wherein the sampling rate is more than or equal to 2 times of pulse frequency, when positive pulse arrives, the data output by the sensor under a positive pulse period is tidied to obtain a curve, namely a positive pulse curve 19, wherein the positive pulse curve is a curve formed by averaging all data in a positive pulse period, equivalent time of the whole positive pulse period to a point and arranging a plurality of equivalent points of the positive pulse period according to time sequence; similarly, when the negative pulse arrives, the same process is performed, which is equivalent to compressing the original to obtain a negative pulse curve 21, and finally averaging the positive pulse curve and the negative pulse curve to obtain the final equivalent noise 20 (i.e. the final result), as shown in fig. 6, it can be seen that the invention can effectively inhibit the low-frequency disturbance of the tunnel magneto-resistance sensor, and the output signal is more stable. Further evaluation of the equivalent power spectral density curve 23 and comparison with the conventional processing result curve 22 shows that the 1/f noise suppressing effect is achieved in the low frequency range.
The above specific embodiments are used for further detailed description of the objects, technical solutions and advantageous effects of the present invention. It should be understood that the foregoing description is only a specific example of the present invention, and is not intended to limit the invention, but rather is a reasonable combination of features described in the foregoing embodiments, and any modifications, equivalents, improvements, etc. that fall within the spirit and principles of the present invention are intended to be included within the scope of the present invention.
Claims (4)
1. The low-frequency magnetic domain noise suppression method for the tunnel magnetoresistive sensor is characterized in that a tunnel magnetoresistive sensor (9) is placed in the center inside a coil (8) by alternately applying magnetic fields with opposite directions around the tunnel magnetoresistive sensor (9), and the sensitive direction of the tunnel magnetoresistive sensor (9) is axially parallel to the coil (8) so that the magnetization direction of a free layer (1) is parallel or antiparallel to the magnetization direction of a pinning layer (3); and then processing the acquired output data of the tunnel magneto-resistance sensor (9) to obtain equivalent noise of the tunnel magneto-resistance sensor (9), so as to inhibit low-frequency 1/f noise generated by magnetic domain disturbance.
2. A suppression apparatus for a low frequency domain noise suppression method for a tunnel magnetoresistive sensor according to claim 1, comprising a pulse generation module, a sensor module, and a data acquisition and analysis module,
the sensor module comprises a coil (8) wound with a plurality of turns of wires, a tunnel magneto-resistance sensor (9) is arranged at the center inside the coil (8), the sensitive direction of the tunnel magneto-resistance sensor (9) is axially parallel to the coil (8), the coil (8) is formed by winding wires with uniform turns, the pulse generation module provides positive and negative pulses to be applied to two ends of the plurality of turns of coils, so that magnetic fields with opposite directions are alternately generated inside the plurality of turns of coils, and the generated magnetic fields can keep the magnetization direction of a free layer (1) of the tunnel magneto-resistance sensor (9) and the magnetization direction of a pinning layer (3) to be parallel or antiparallel;
the pulse generation module comprises a singlechip, a control switch chip and an adjustable boost chip, wherein the singlechip provides unidirectional pulses for the control switch chip, the control switch chip provides positive and negative pulses for the adjustable boost chip, and the adjustable boost chip outputs the positive and negative pulses to the multi-turn coil.
3. The suppression device for the low-frequency magnetic domain noise suppression method of the tunnel magnetoresistive sensor according to claim 2, characterized in that the skeleton of the coil (8) is made of a non-magnetic material and the wound multi-turn wire is made of copper wire.
4. A data processing method adopted by the low-frequency magnetic domain noise suppression method for the tunnel magnetoresistive sensor according to claim 1, characterized by comprising the steps of sampling the sensor output and obtaining the equivalent noise of the sensor, firstly selecting a proper sampling rate to collect the data output by the sensor, and sorting the data output by the sensor under a positive pulse period to obtain a curve, namely a positive pulse curve (19), when each positive pulse arrives; similarly, a curve, namely a negative pulse curve (21), is obtained each time a negative pulse arrives; then, the two curves are averaged to obtain equivalent noise (20) of the sensor;
the positive pulse curve (19) is obtained by averaging all data in one positive pulse period, making the whole pulse period time equivalent to the mean value point, and arranging a plurality of positive pulse period equivalent points according to time sequence;
the undershoot curve (21) is obtained by averaging all data in one undershoot period, equating the whole pulse period time to the mean point, and arranging a plurality of undershoot period equivalent points in time sequence.
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| CN109556647A (en) * | 2018-11-30 | 2019-04-02 | 苏州大学 | A kind of low-frequency noise inhibition device and method of tunnel magneto-resistance effect sensor |
| CN111413654A (en) * | 2020-04-14 | 2020-07-14 | 华中科技大学 | System and method for reducing noise of tunnel magneto-resistance sensor |
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| US9519034B2 (en) * | 2014-05-15 | 2016-12-13 | Everspin Technologies, Inc. | Bipolar chopping for 1/F noise and offset reduction in magnetic field sensors |
| CN106842079B (en) * | 2016-11-11 | 2020-10-20 | 中国人民解放军国防科学技术大学 | Magnetic field sensor noise chopping suppression measurement method based on electric field regulation and control magnetism |
| FR3067116B1 (en) * | 2017-06-02 | 2019-07-12 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | SYSTEM AND METHOD FOR LOW FREQUENCY NOISE REMOVAL OF MAGNETO-RESISTIVE MAGNETORESISTENCE TUNNEL SENSORS |
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| CN109556647A (en) * | 2018-11-30 | 2019-04-02 | 苏州大学 | A kind of low-frequency noise inhibition device and method of tunnel magneto-resistance effect sensor |
| CN111413654A (en) * | 2020-04-14 | 2020-07-14 | 华中科技大学 | System and method for reducing noise of tunnel magneto-resistance sensor |
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