CN113584456A - 超滑骨架及其加工方法 - Google Patents

超滑骨架及其加工方法 Download PDF

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CN113584456A
CN113584456A CN202110827207.6A CN202110827207A CN113584456A CN 113584456 A CN113584456 A CN 113584456A CN 202110827207 A CN202110827207 A CN 202110827207A CN 113584456 A CN113584456 A CN 113584456A
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徐芦平
李闯
向小健
郑泉水
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Tsinghua University
Shenzhen Research Institute Tsinghua University
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Shenzhen Research Institute Tsinghua University
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Abstract

本发明提供了一种超滑骨架及其加工方法，用于与超滑片组合构成超滑副，所述超滑片置于所述超滑骨架上，包括基底和设于所述基底上的薄膜层，所述薄膜层上设有若干个孔结构，所述薄膜层的表面是原子级平整表面，所述超滑片置于所述薄膜层上，且所述超滑片的尺寸大于所述孔结构的尺寸。本发明提供的超滑骨架，薄膜层的表面满足原子级平整，且孔结构的边缘不影响薄膜层的表面平整度，且超滑片的尺寸大于孔结构的尺寸，超滑片可以在超滑骨架上同时覆盖多个孔结构，从而可以避免超滑骨架上形成的凹凸结构影响其表面平整度，不仅有效的减小了摩擦力，且降低了对于超滑平面的加工要求，降低了加工难度。

Description

超滑骨架及其加工方法
技术领域
本发明涉及结构超滑的技术领域，具体涉及一种超滑骨架及其加工方法。
背景技术
长期以来,摩擦和磨损的问题,不但与制造业密切相关,还与能源、环境和健康直接相关。据统计,全世界约三分之一的能源在摩擦过程中被消耗掉,约80％的机器零部件失效都是由磨损造成的。结构超滑是解决摩擦磨损问题的理想方案之一，结构超滑是指两个原子级光滑且非公度接触的范德华固体表面(如石墨烯、二硫化钼等二维材料表面)之间摩擦、磨损几乎为零的现象。
在制备超滑器件的过程中，往往涉及到基底的制备，由于超滑片的尺度小，所以制备高质量的小型基底是影响良品率的重要因素。目前，常规采用的基底是直接采用完整的硅片，通过加工使得硅基底的表面达到原子级平整，但是由于硅基底和超滑片之间的接触是完全贴合的，因此硅基底和超滑片之间的接触面积比较大，若需要降低硅基底和超滑片之间的摩擦力，则需要进一步的提高硅基底和超滑片的表面平整度，使得制备过程更加繁琐，且制备效率低。
发明内容
本发明的目的在于提供一种超滑骨架及其加工方法，以解决现有技术中硅基底和超滑片之间的接触面积较大，导致降低摩擦力对工艺要求较高的技术问题。
为实现上述目的，本发明采用的技术方案是：提供一种超滑骨架，用于与超滑片组合构成超滑副，所述超滑片置于所述超滑骨架上，包括基底和设于所述基底上的薄膜层，所述薄膜层上设有若干个孔结构，所述薄膜层的表面是满足原子级平整表面，所述超滑片置于所述薄膜层上，且所述超滑片的面积大于所述孔结构的面积。
进一步地，所述孔结构超滑片的尺寸为100nm至5μm，优选的，所述孔结构都的尺寸为100nm至500nm；所述超滑片的尺寸为1μm至20μm，且所述超滑片可以同时覆盖至少一个所述孔结构。
进一步地，所述孔结构为通孔或盲孔。
进一步地，所述薄膜层的材质为二氧化硅、氮化硅、氧化铝、氧化铪、氮化铝或高分子薄膜。
进一步地，所述孔结构的形状为方形、圆形、矩形和三角形。
进一步地，所述孔结构呈阵列分布，且所述孔结构之间的间距相等或不相等。
本发明还提供了一种加工如上所述的超滑骨架的加工方法，包括如下步骤：
提供薄膜层，所述薄膜的表面是原子级平整表面；
在所述薄膜层上覆盖光刻胶层，且并对所述光刻胶层进行加工并形成上具有若干个通孔；
利用所述光刻胶层作为掩膜，刻蚀所述薄膜层，所述薄膜层上形成若干孔结构；
去除所述薄膜层的表面上残留的所述光刻胶层。
进一步地，还包括如下步骤：提供基底，并在所述基底上布设所述薄膜层。
进一步地，所述光刻胶层是正性光刻胶，且所述刻蚀采用干法刻蚀。
进一步地，所述薄膜层的厚度为100nm至300nm，且刻蚀深度为100nm至300nm。
本发明提供的超滑骨架及其加工方法的有益效果在于：与现有技术相比，本发明的超滑骨架，薄膜层的表面满足原子级平整，且孔结构的边缘不影响薄膜层的表面平整度，且超滑片的尺寸大于孔结构的尺寸，超滑片可以在超滑骨架上同时覆盖多个孔结构，从而可以避免超滑骨架上形成的凹凸结构影响其表面平整度，不仅有效的减小了摩擦力，且降低了对于超滑平面的加工要求，降低了加工难度。
附图说明
为了更清楚地说明本发明具体实施方式或现有技术中的技术方案，下面将对具体实施方式或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图是本发明的一些实施方式，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明实施例提供的超滑骨架的结构示意图一；
图2为沿图1中A-A线的剖视结构图；
图3为本发明实施例提供的超滑骨架的结构示意图二；
图4为本发明实施例提供的超滑骨架的结构示意图三；
图5为本发明实施例提供的超滑骨架的加工方法的加工步骤示意图；
图6为本发明实施例提供的超滑骨架的薄膜层的表面摩擦力表征图；
图7为本发明实施例提供的超滑骨架的薄膜层的表面摩擦系数拟合图；
图8为本发明实施例提供的超滑骨架的平面形貌表征图；
图9为本发明实施例提供的超滑骨架的立体形貌表征图；
图10为本发明实施例提供的超滑骨架的摩擦表征图，其中#1区域为非超滑骨架区域，#2为超滑骨架区域；
图11为本发明实施例提供的超滑骨架区域和非超滑骨架区域的表面摩擦系数拟合图。
附图标记说明：
1、基底；2、薄膜层；3、光刻胶层；21、孔结构；31、通孔。
具体实施方式
下面将结合附图对本发明的技术方案进行清楚、完整地描述，显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
在本发明的描述中，需要说明的是，术语“中心”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”、“第三”仅用于描述目的，而不能理解为指示或暗示相对重要性。
在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本发明中的具体含义。
此外，下面所描述的本发明不同实施方式中所涉及的技术特征只要彼此之间未构成冲突就可以相互结合。
请一并参阅图1至图4，现对本发明提供的超滑骨架进行说明。所述超滑骨架和超滑片(图未示)为超滑接触，即超滑骨架和超滑片组合构成结构超滑副，超滑片能够在超滑骨架上滑动，且此时的摩擦力几乎为零。其中超滑接触是指超滑骨架和超滑片在相对运动时，摩擦力几乎为零，摩擦系数小于千分之一，磨损为零。
超滑片的至少一个表面为原子级光滑的表面，超滑片是超滑副的一部分，超滑骨架即构成超滑副的另一部分，其中超滑片一般可以采用HOPG或石墨烯等制备。
对于超滑骨架，其包括基底1和设于所述基底1上的薄膜层2，所述薄膜层2开设有若干个孔结构21，薄膜层2的表面满足原子级平整，且孔结构21的边缘不影响薄膜层2的表面平整度。超滑片置于超滑骨架上，超滑片的尺寸大于孔结构21的尺寸，超滑片可以在超滑骨架上同时覆盖多个孔结构21，此时既可以避免超滑骨架上形成的凹凸结构影响其表面平整度。
在现有技术中原子级平整一般是指至少在10×10um2的范围内无毛刺或凹坑，因此对于超滑结构，其一般需要达到原子级平整，更需要保证超滑副的表面无明显凸起或凹陷的区域，从而影响其表面平整度。而本申请开拓式的采用非“平整”表面作为超滑副，在超滑平面上开设若干个孔，减小超滑骨架和超滑片之间的接触面积，且仅需要保证超滑骨架的上表面达到原子级平整即可，不仅有效的减小了摩擦力，且降低了对于超滑平面的加工要求，降低了加工难度。
请参阅图6至图11的结构形貌表征图，可以得知，在薄膜层2上开设孔结构21并未影响剩余区域的表面平整度，并且，结合图11中的曲线，其中“□”所代表的曲线为非超滑骨架区域的摩擦系数曲线，“◇”和“ⅹ”所代表曲线为超滑骨架区域的摩擦系数曲线，结合曲线可知，超滑骨架区域的摩擦力小于非超滑骨架区域的摩擦力。
基底1一般采用绝缘基底或半导体基底，优选的采用高阻硅基底，薄膜层2沉积于基底1的上表面。对于薄膜层2其厚度一般较薄，薄膜层2优选的可以采用电介质薄膜，其材质一般可以选用二氧化硅、氮化硅、氧化铝、氧化铪、氮化铝、高分子薄膜等，其沉积的方法一般为原子层沉积、化学气象沉积、磁控溅射等方式。在薄膜层2上一般采用刻蚀工艺加工出孔结构21，能够避免影响薄膜层2其他区域的表面平整度。
优选的，孔结构21的尺寸一般都比较小，孔结构的长度小于超滑片的长度，孔结构的宽度也小于超滑片的宽度，孔结构在薄膜层上的横截面面积小于超滑片在薄膜层上的横截面的面积，其一般长度和宽度的尺寸为100nm至5μm，优选尺寸为100nm至500nm，超滑片的尺寸较大，一般尺寸为1μm至20μm，且超滑片尺寸大于孔结构21的尺寸。并且，相邻的两个孔结构21之间的尺寸可以设置的相对较大，也可以设置的相对较小，均可以根据具体的需求确定。
其中，对于孔结构21，其可以为通孔31或盲孔，其可以仅部分贯穿表面的薄膜层2，也可以完全的贯穿表面的薄膜层2；孔结构21还可以不仅设置在薄膜层2上，其还可以贯穿至基底1的内部，从而加深孔的深度，此处均不作唯一具体的限定。
优选的，孔结构21的横截面的形状可以为方形、圆形、矩形、三角形或其他异形，可以根据实际的需求进行适应性的调整。孔结构21的数量为多个，多个孔结构21一般呈阵列分布，阵列可以为矩形阵列、圆形阵列或其他阵列方式，且孔结构21之间可以均匀等间距或不等间距，此处均不作唯一具体限定。
请参阅图5，本发明还提供一种超滑骨架的加工方法，所述超滑骨架的加工方法包括如下步骤：
S1,在基底1上沉积或生成薄膜层2，薄膜层2的厚度一般较薄；
S2，在薄膜层2上覆盖一层光刻胶层3，且光刻胶层3上即具有若干个通孔31，且该通孔31的位置和尺寸均与预加工的超滑骨架的孔结构21相同。对于光刻胶层3上形成通孔31的方式为一般是在甩胶的过程中成型的，对甩胶的位置和厚度进行控制，从而使得光刻胶层3上成型有若干个通孔31。
S3,刻蚀孔结构21，采用干法刻蚀或湿法刻蚀的方式进行刻蚀，使得薄膜层2上刻蚀出若干个孔结构21，且孔结构21的位置和尺寸均与光刻胶层3上通孔31的位置和尺寸一致；
S4,去除残留光刻胶，将残留的光刻胶层3去除，既可以得到超滑骨架。
本发明提供的超滑骨架的加工方法，能够加工成型的超滑骨架，其保留的超滑骨架的表面能够达到原子级平整，且保留的超滑骨架和孔结构21的连接处也不会形成毛刺或凹坑，从而影响连接处的表面平整性，达到减少超滑骨架和超滑片之间的接触面积的效果，且不会由于表面上存在孔结构21，增大摩擦力，并且工艺流程简单，能够实现结构超滑副的批量化制备。
进一步地，作为本发明提供的超滑骨架的加工方法的一种具体实施方式，基底1一般选用硅基底1，在镀膜前需要首先对硅基底1进行清洗，使得其表面清洁干净，并烘干，然后再在基底1的表面上进行镀膜，薄膜的材料可以是氧化硅、氧化钛、氮化硅或氧化铝等，其镀膜方式可以为ALD、PECVD、LPCVD、磁控溅射等。
在薄膜层2上覆盖光刻胶层3的方法一般采用甩胶的方式，将覆盖有薄膜层2的基底1置于甩胶机的内部，采用正性光刻胶进行甩胶，同时在甩胶的过程中形成若干个通孔31，且通孔31之间一般呈阵列排布。再采用干法刻蚀或湿法刻蚀的方式对薄膜层2进行刻蚀，使得薄膜层2上形成若干个孔结构21，其中刻蚀的深度可以大于或等于薄膜层2的厚度，从而在薄膜层2上形成通孔31；刻蚀的深度还可以小于薄膜层2的厚度，从而在薄膜层2上形成盲孔。
最后再将剩余的光刻胶清洗并烘干，将形成的超滑骨架置于丙酮中浸泡，去除光刻胶，然后再在丙酮、酒精、去离子水中超声处理，最后用氮气吹干，置于烘箱中进行烘干将残留的水分去除。
显然，上述实施例仅仅是为清楚地说明所作的举例，而并非对实施方式的限定。对于所属领域的普通技术人员来说，在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。而由此所引伸出的显而易见的变化或变动仍处于本发明创造的保护范围之中。

Claims (10)

1.一种超滑骨架，用于与超滑片组合构成超滑副，所述超滑片置于所述超滑骨架上，其特征在于：包括基底和设于所述基底上的薄膜层，所述薄膜层上设有若干个孔结构，所述薄膜层的表面是原子级平整表面，所述超滑片置于所述薄膜层上，且所述孔结构的面积小于所述超滑片的面积。
2.如权利要求1所述的超滑骨架，其特征在于：所述孔结构的长度和宽度的尺寸为100nm至5μm，优选的，所述孔结构的长度和宽度的尺寸为100nm至500nm；所述超滑片的尺寸为1μm至20μm，且所述超滑片可以同时覆盖至少一个所述孔结构。
3.如权利要求1所述的超滑骨架，其特征在于：所述孔结构为通孔或盲孔。
4.如权利要求1所述的超滑骨架，其特征在于：所述薄膜层的材质为二氧化硅、氮化硅、氧化铝、氧化铪、氮化铝或高分子薄膜。
5.如权利要求1所述的超滑骨架，其特征在于：所述孔结构的形状为方形、圆形、矩形和三角形。
6.如权利要求1所述的超滑骨架，其特征在于：所述孔结构呈阵列分布，且所述孔结构之间的间距相等或不相等。
7.如权利要求1所述的超滑骨架的加工方法，其特征在于，包括如下步骤：
提供薄膜层，所述薄膜的表面是原子级平整表面；
在所述薄膜层上覆盖光刻胶层，且所述光刻胶层上具有若干个通孔；
利用所述光刻胶层作为掩膜，刻蚀所述薄膜层，所述薄膜层上形成若干孔结构；
去除所述薄膜层的表面上残留的所述光刻胶层。
8.如权利要求7所述的超滑骨架的加工方法，其特征在于，还包括如下步骤：
提供基底，并在所述基底上布设所述薄膜层。
9.如权利要求7所述的超滑骨架的加工方法，其特征在于，所述光刻胶层是正性光刻胶，且所述刻蚀采用干法刻蚀。
10.如权利要求7所述的超滑骨架，其特征在于：所述薄膜层的厚度为100nm至300nm，且刻蚀深度为100nm至300nm。
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