CN113580397A

CN113580397A - Clamping structure, silicon wafer cutting device and cutting process thereof

Info

Publication number: CN113580397A
Application number: CN202110875698.1A
Authority: CN
Inventors: 孙信明
Original assignee: Funing Xiexin Photovoltaic Technology Co ltd
Current assignee: Funing Xiexin Photovoltaic Technology Co ltd
Priority date: 2021-07-30
Filing date: 2021-07-30
Publication date: 2021-11-02

Abstract

The invention relates to a clamping structure, a silicon wafer cutting device and a silicon wafer cutting process, wherein the silicon wafer cutting process comprises the steps of visually determining the contact position of a crystal bar and a cutting wire net, and determining the coordinate of the position in the feeding direction as a visual zero coordinate; determining a cutter feeding position interval value in the feeding direction according to the visual inspection zero point coordinate, and presetting a first machining parameter; the crystal bar moves along the feeding direction, when the instant position coordinate of the crystal bar falls into the knife entering position interval value, the silicon wafer cutting equipment is controlled to be in a state of adopting the first processing parameter to operate, and when the crystal bar contacts the cutting wire net, the cutting is carried out according to the first processing parameter. The invention reduces the tool-entering TTV caused by the deviation between the cutting zero point determined by visual inspection and the actual cutting zero point.

Description

Clamping structure, silicon wafer cutting device and cutting process thereof

Technical Field

The invention relates to the technical field of silicon wafer processing, in particular to a clamping structure, a silicon wafer cutting device and a silicon wafer cutting process.

Background

With the development of the solar photovoltaic industry, the application of silicon wafers in the fields of semiconductor devices, solar cells and the like is increasing. A silicon wafer multi-wire cutting technology has appeared, which is a cutting processing method for cutting a crystal bar in a semiconductor processing area into hundreds of silicon wafers at one time by high-speed relative reciprocating motion between the crystal bar and a cutting wire net.

TTV abnormity exists in the multi-wire cutting process of the silicon wafer, the TTV abnormity is the difference value between the maximum thickness and the minimum thickness of the silicon wafer in the thickness measurement value obtained by the multi-wire cutting of the silicon wafer, a user refers to the total thickness change of the silicon wafer, and the difference value is an important standard for measuring the quality of the silicon wafer. Therefore, the existence of TTV abnormity directly influences the silicon wafer yield, and even leads the silicon wafer to be degraded into B wafers. However, TTV anomalies typically include knife-in TTV and late-mid TTV; the existing silicon wafer cutting process is mainly used for optimizing processing parameters in the middle and later stages of cutting processing when TTV abnormity is improved, and further provides a middle and later stage TTV abnormity processing method so as to improve the middle and later stage TTV of cutting processing. However, the reasons for the TTV in the middle and later stages are completely different from the reasons for the TTV in the cutter feeding, the TTV in the middle and later stages is mainly caused by the abnormality of the cutting process, and the TTV in the cutter feeding is mainly caused by the abnormality of the machine table and the abnormality before cutting, for example, the TTV in the cutter feeding is caused by the unstable clamping of the workpiece or the abnormality of the processing parameters when the workpiece is in contact with the cutting wire net. The existing TTV exception handling method in the middle and later periods cannot improve the TTV of the cutter, and in addition, the existing silicon wafer cutting device is not improved aiming at improving the TTV of the cutter.

However, in the production process, the tool entering TTV is detected by a data acquisition system (MES data system) to account for about 50% of the total TTV abnormity, so that the tool entering TTV is optimized, the TTV abnormity can be reduced, and the silicon wafer qualification rate is improved.

Disclosure of Invention

Therefore, it is necessary to provide a clamping structure, a silicon wafer cutting device and a cutting process thereof, aiming at the problem that the existing silicon wafer cutting process and device cannot improve the tool-entering TTV.

A clamping structure is arranged above a cutting wire net and comprises a body and a workpiece plate; the body comprises a clamping groove and a pulling-up piece, the clamping groove is formed in one side, close to the cutting wire net, of the body, the clamping groove is provided with a first clamping surface and a second clamping surface which are oppositely arranged in a first direction, the pulling-up piece is fixed to the bottom of the clamping groove in a second direction and is located between the first clamping surface and the second clamping surface, the pulling-up piece is provided with a first abutting surface, and the first direction is perpendicular to the second direction; the workpiece plate is removably arranged on the body and comprises a clamping part and a connecting part, wherein the clamping part is clamped between the first clamping surface and the second clamping surface, the connecting part is used for fixing a workpiece, the clamping part is provided with a matching groove matched with the pulling part, and the matching groove is provided with a second abutting surface which abuts against the first abutting surface in the second direction.

The clamping structure is provided with a clamping groove on the body, and the clamping groove is provided with a first clamping surface and a second clamping surface so as to clamp two sides of the workpiece plate in a first direction; and meanwhile, the body is provided with a pulling piece, the workpiece plate is provided with a matching groove, and when the first abutting surface abuts against the second abutting surface, the body can pull and fix the workpiece plate along the second direction. So set up, body and work piece board all have the cooperation relation in mutually perpendicular's first direction and second direction, make the work piece board fix on the body comparatively steadily, when work piece contact cutting wire net, alleviate the shake of work piece board, just also make the work piece get into comparatively steadily by the cutting state, can reduce into sword TTV, do benefit to and improve the silicon chip qualification rate.

The technical solution of the present application is further explained as follows:

in one embodiment, the first clamping surface and the second clamping surface are both inclined towards the direction of the wire web.

In one embodiment, the first clamping surface is fixedly provided with a first reinforcing part to form a first reinforcing clamping surface parallel to the first clamping surface; the second clamping surface is fixedly provided with a second reinforcing part to form a second reinforcing clamping surface parallel to the second clamping surface; the clamping part is clamped between the first reinforced clamping surface and the second reinforced clamping surface so as to provide acting force for pressing the first abutting surface downwards by the second abutting surface along the second direction.

In one embodiment, the first reinforcement part comprises a first thickened layer welded at the first clamping surface, and the second reinforcement part comprises a second thickened layer welded at the first clamping surface.

The invention also provides a silicon wafer cutting device which comprises the clamping structure.

The invention also provides a silicon wafer cutting process, which comprises the following steps:

s1, visually determining the contact position of the crystal bar and the wire cutting net, and determining the coordinate of the position in the feeding direction as a visual zero coordinate;

s2, determining a cutter feeding position interval value in the feeding direction according to the visual inspection zero point coordinate, and presetting a first machining parameter;

and S3, the crystal bar moves along the feeding direction until the instant position coordinate of the crystal bar falls into the knife entering position interval value, the silicon wafer cutting equipment is controlled to be in a state of adopting the first processing parameter to operate, and the first processing parameter is used for cutting when the crystal bar contacts the cutting wire net.

The silicon wafer cutting process determines a cutter entering position interval value according to the visual inspection zero position, and when the crystal bar moves relative to the cutting wire net along the feeding direction until the instant position coordinate of the crystal bar falls into the cutter entering position interval value, the silicon wafer cutting process is controlled to be in a state of adopting a first processing parameter to operate, so that when the crystal bar actually contacts the cutting wire net, the first processing parameter can be adopted to cut. Compared with the silicon wafer cutting process in the prior art, the silicon wafer cutting process has the advantages that the knife entering position interval value is set, the same preset first processing parameter is adopted in the knife entering position interval value, and the knife entering TTV caused by the deviation between the cutting zero point determined by visual inspection and the actual cutting zero point is reduced to a certain extent.

In one embodiment, the silicon wafer dicing process further includes the steps of:

and S4, continuously moving the crystal bar along the feeding direction until the instant position coordinate is separated from the cutter-entering position interval value, and starting to cut by using a preset second processing parameter, wherein the second processing parameter is larger than the first processing parameter.

In one embodiment, step S2 includes determining the visual zero coordinate as a midpoint value of the tool insertion position interval value, determining an extreme value of the tool insertion position interval value according to the visual error interval value, and ensuring that the tool insertion position interval value includes the visual error interval value.

In one embodiment, the method for determining the visual error interval value includes the steps of:

s01, visually determining the contact position of the crystal bar and the wire cutting net in the feeding direction of the crystal bar;

s02, determining the actual contact position of the crystal bar and the cutting wire net;

s03, making a difference between the coordinate of the visually determined position in the feeding direction and the coordinate of the actual position in the feeding direction to obtain an error value;

after repeating the steps S01 to S03 a plurality of times, the absolute values of the error values obtained a plurality of times are added to obtain an average value t, and the visual error interval value is determined to be [ -t, + t ].

In one embodiment, when the visual zero-point coordinate is 0mm and the visual error interval value is [ -1.5mm, +1.5mm ], the insert position interval value is determined as [ -2.5mm, +2.5mm ].

Drawings

FIG. 1 is an exploded view of a clamping structure according to an embodiment of the present invention;

FIG. 2 is a schematic structural view of a clamping structure according to an embodiment of the present invention;

FIG. 3 is a schematic structural view of a clamping structure according to another embodiment of the present invention;

FIG. 4 is an enlarged view of a portion I of FIG. 3;

FIG. 5 is a partial enlarged view of section II of FIG. 3;

FIG. 6 is a schematic diagram illustrating a step of a silicon wafer dicing process according to an embodiment of the present invention;

FIG. 7 is a schematic view of a processing state of a silicon wafer dicing process according to an embodiment of the present invention;

reference numerals:

10. a clamping structure; 100. a body; 110. a clamping groove; 111. the bottom of the tank; 112. a first clamping surface; 113. a second clamping surface; 114. a first reinforcing portion; 1141. a first reinforcing clamping surface; 115. a second reinforcement portion; 120. pulling up the piece; 121. a first abutting surface; 200. a workpiece plate; 210. a clamping portion; 220. a connecting portion; 230. a top surface; 240. a mating groove; 241. a second abutting surface; 300. a first slit; 400. a second slit; 20. cutting a wire mesh; 30. and (4) crystal bars.

Detailed Description

In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.

The embodiment of the invention provides a silicon wafer cutting device which comprises a cutting wire net and a clamping structure, wherein a workpiece is fixed on the clamping structure and is fed towards the direction close to the cutting wire net, the workpiece is cut through the cutting wire net, and a crystal bar is cut into hundreds of silicon wafers at one time.

Referring to fig. 1 and 2, a clamping structure 10 is provided in accordance with an embodiment of the present invention, which is disposed above a wire web 20. The clamping structure 10 includes a body 100 and a workpiece plate 200 detachably connected, wherein the body 100 is fixed to a moving table (not shown) of the silicon wafer cutting apparatus, and the moving table is movable with respect to a wire net 20. One side of the workpiece plate 200 is removably disposed on the body 100, and the other side of the workpiece plate 200 is used for fixing a workpiece, which is the crystal bar 30 in the embodiment. In a specific arrangement, the ingot 30 may be glued to the bottom surface of the workpiece plate 200, or the workpiece may be fixed in some other way.

Referring to fig. 1, in the present embodiment, the body 100 includes a clamping groove 110 and a pulling-up member 120, the clamping groove 110 is opened at a side of the body 100 relatively close to the cutting wire net 20, the clamping groove 110 has two first clamping surfaces 112 and two second clamping surfaces 113 oppositely disposed in a first direction, the pulling-up member 120 is fixed at a groove bottom 111 of the clamping groove 110 along a second direction, the pulling-up member 120 is located between the first clamping surfaces 112 and the second clamping surfaces 113, and the pulling-up member 120 has a first abutting surface 121. The first direction is perpendicular to the second direction, and as an example, the first direction is an x direction in fig. 1, i.e., a horizontal direction, and the second direction is a y direction in fig. 1, i.e., a vertical direction. The workpiece plate 200 includes a clamping portion 210 clamped between the first clamping surface 112 and the second clamping surface 113, and a connecting portion 220 for fixing the workpiece, a top surface 230 of the clamping portion 210 opposite to the groove bottom 111 is provided with a matching groove 240 matched with the pulling-up member 120, and the matching groove 240 has a second abutting surface 241 abutting against the first abutting surface 121 in the second direction.

In the clamping structure 10, the main body 100 is provided with a clamping groove 110, and the clamping groove 110 is provided with a first clamping surface 112 and a second clamping surface 113 for clamping the side of the workpiece plate 200 in a first direction; meanwhile, the pulling-up piece 120 is arranged on the body 100, the matching groove 240 is arranged on the workpiece plate 200, and when the first abutting surface 121 abuts against the second abutting surface 241, the body 100 can pull up and fix the workpiece plate 200 in the second direction. So set up, body 100 all has the cooperation relation with work piece board 200 in mutually perpendicular's first direction and second direction, makes work piece board 200 fix on body 100 for stablizing, when work piece contact cutting wire net 20, alleviates work piece board 200's shake, just also makes the work piece get into more steadily by the cutting state, can reduce into sword TTV, does benefit to and improves the silicon chip qualification rate.

With continued reference to fig. 1 and 2, in one embodiment, the first clamping surface 112 and the second clamping surface 113 are both inclined toward the direction of the wire web 20. The clamping groove 110 of the clamping structure 10 is a dovetail groove formed in the bottom of the body 100, and when the clamping portion 210 of the workpiece plate 200 is clamped between the first clamping surface 112 and the second clamping surface 113, the acting force of the body 100 on the workpiece plate 200 is perpendicular to the inclined first clamping surface 112 and the second clamping surface 113, so that besides the clamping force along the first direction, a component force along the second direction acts on the clamping portion 210 of the workpiece plate 200 and is transmitted to the second abutting surface 241 of the matching groove 240 by the clamping portion 210, so that an additional pressing acting force is generated between the second abutting surface 241 and the first clamping surface 112 besides the acting force generated by the gravity of the workpiece plate 200, and the stability of fixing the body 100 and the workpiece plate 200 in the vertical direction is further improved.

With continued reference to fig. 3-5, in one embodiment, the first clamping surface 112 is fixedly provided with a first reinforcing portion 114 to form a first reinforced clamping surface 1141 parallel to the first clamping surface 112; the second clamping surface 113 is fixedly provided with a second reinforcement portion 115 to form a second reinforced clamping surface (not shown) parallel to the second clamping surface 113. The clamping portion 210 is clamped between the first enhanced clamping surface 1141 and the second enhanced clamping surface to provide a force for pressing down the first abutting surface 121 by the second abutting surface 241 along the second direction.

To better explain the above structure, referring to fig. 2, when the structure of the first reinforcing part 114 and the second reinforcing part 115 is not provided, a first gap 300 is formed between the top surface 230 of the workpiece plate 200 and the groove bottom 111 of the body 100. Referring to fig. 3 and 4, in the embodiment of the first reinforcing portion 114 and the second reinforcing portion 115, a second gap 400 is formed between the top surface 230 of the workpiece plate 200 and the bottom 111 of the body 100, wherein L1 in fig. 4 is the size of the first gap 300, L2 in fig. 4 is the size of the second gap 400, and the second gap 400 is larger than the first gap 300. Referring to fig. 4 and 5, the clamping portion 210 of the workpiece plate 200 moves downward relative to the body 100 to further provide a force (shown as F in fig. 5) for the second abutting surface 241 to press down the first abutting surface 121. The first reinforced clamping surface 1141 can be regarded as a clamping surface obtained by translating the first clamping surface 112 by a small distance, and similarly, the second reinforced clamping surface can be regarded as a clamping surface obtained by translating the second clamping surface 113 by a small distance. As an example, the first reinforcement portion 114 includes a first thickened layer welded to the first clamping surface 112, and the second reinforcement portion 115 includes a second thickened layer welded to the first clamping surface 112. For example, a 1mm thickening is welded to the first clamping surface 112, while a 1mm thickening is welded to the second clamping surface 113. The clamping structure 10 is provided with the first reinforcing portion 114 and the second reinforcing portion 115, so that on one hand, the acting force of the second abutting surface 241 pressing down the first abutting surface 121 along the second direction is enhanced, the connection between the body 100 and the workpiece plate 200 is further enhanced, and on the other hand, a certain margin is left for the abrasion of the contact position of the body 100 and the workpiece plate 200.

In addition, in the silicon wafer cutting process in the prior art, the cutting zero point is usually determined visually, no deviation of the visually determined cutting zero point is defaulted, the obtained visual cutting zero point is set as the cutting zero point of the process, namely, the contact position of the crystal bar 30 and the cutting wire net 20, and the table speed and the linear speed are gradually increased from the initial table speed and the linear speed at the set cutting zero point. In the actual production process, there often exists an error in the visually determined cutting zero point, for example, when the zero point error is 1mm higher, that is, the visual cutting zero point is 1mm higher than the actual cutting zero point in the seating height of the crystal bar 30 in the feeding direction, and when the crystal bar 30 is not yet contacted with the wire mesh, the table speed and the linear speed are increased according to the determined visual cutting zero point. Thus, when the crystal bar 30 actually contacts with the wire mesh, the process enters a high stage speed stage, i.e. the process is in a state higher than the initial stage speed and the wire speed, so that the contact wire mesh of the crystal bar 30 is unstable, and the tool entry TTV is increased. To more clearly explain the above technical problem, referring to fig. 7, in an embodiment, a center line c is a visually determined position where the ingot 30 contacts the wire net 20 in the feeding direction (a direction in fig. 7) of the ingot 30, i.e., the above-mentioned visual cut zero point. However, the position where the ingot 30 actually contacts the wire net 20 is the position of the solid line b in the figure, and the center line c is deviated from the solid line b due to the presence of the visual deviation, that is, the visual zero point is deviated from the actual zero point. When the ingot 30 moves to the center line c, the table speed and the linear speed start to be increased, and when the ingot 30 moves to the solid line b, the table speed and the linear speed are higher, the contact line network of the ingot 30 is unstable, and the tool entrance TTV is increased.

In order to solve the problem of the increase of the tool-entering TTV caused by the visual deviation, referring to fig. 6 and 7, an embodiment of the invention provides a silicon wafer cutting process, which includes:

step S1, visually confirming the position where the ingot 30 contacts the wire net 20, and determining the coordinate of the visually confirmed position in the feeding direction as a visual zero point coordinate.

And step S2, determining the cutter feeding position interval value in the feeding direction according to the visual zero point coordinate, and presetting a first machining parameter.

And S3, moving the crystal bar 30 along the feeding direction until the instant position coordinate of the crystal bar 30 falls within the knife-in position interval value, controlling the silicon wafer cutting equipment to be in a state of operating by adopting the first processing parameter, and ensuring that the crystal bar 30 is cut by the first processing parameter when contacting the cutting wire net 20, wherein the instant position coordinate is the coordinate of the position of the crystal bar 30 in the feeding direction.

To explain more clearly, referring to fig. 7 as an example, the ingot 30 is fed relative to the wire net 20 in the feeding direction (a direction shown in fig. 7), the position where the ingot 30 contacts the wire net 20 (at the center line c shown in fig. 7) is visually determined, and the coordinate of the center line c in the a direction is taken as the visual zero point coordinate. The value of the tool insertion position interval in the feed direction (the value of the coordinate interval between the broken line e and the broken line f in fig. 7) is determined from the visual zero point coordinates. When the crystal bar 30 moves to a position between two dotted lines along the feeding direction, the silicon wafer cutting equipment is controlled to be in a state of adopting the first processing parameter to operate, so that the crystal bar 30 is ensured to be cut by the first processing parameter when the crystal bar 30 actually contacts the cutting wire net 20, namely the crystal bar 30 moves to a position of a solid line b in the figure.

The above-mentioned silicon wafer dicing process is to define an area based on the visually determined position where the ingot 30 contacts the dicing wire net 20, i.e., a starting point (dotted line e) of the defined area is spaced above the visually determined contact position (center line c) and an ending point (dotted line f) of the defined area is spaced below the visually determined contact position. When the ingot 30 moves into the region between the dotted line e and the dotted line f, the silicon wafer cutting apparatus operates the first processing parameter. This ensures that the cutting is performed at the first processing parameter at the position (solid line b) where the ingot 30 actually contacts the wire net 20.

In addition, the first processing parameter includes more than one processing parameter, which is not limited in the present application, and may include, but is not limited to, a table speed and a line speed. The first processing parameter may be preset as needed, for example, the first processing parameter includes an initial stage speed and a linear speed adopted at a cutting zero point preset in a silicon wafer cutting process in the prior art.

The silicon wafer cutting process determines a cutter entering position interval value according to the visual inspection zero position, when the crystal bar 30 moves along the feeding direction until the instant position coordinate of the crystal bar 30 falls into the cutter entering position interval value, the silicon wafer cutting process is controlled to be in a state of adopting a first processing parameter to operate, and when the crystal bar 30 actually contacts the cutting wire mesh 20, the first processing parameter can be adopted to cut. Compared with the silicon wafer cutting process in the prior art, the silicon wafer cutting process has the advantages that the cutter entering position interval value where the zero point of visual measurement cutting is possibly located is set, the same preset processing parameter is adopted in the cutter entering position interval value, and cutter entering TTV caused by deviation between the zero point of visual measurement determined cutting and the actual zero point of cutting is reduced to a certain extent.

Further, in an embodiment, the silicon wafer cutting process further includes step S4, when the ingot 30 continues to move along the feeding direction until the instant position coordinate is separated from the knife-in position interval value, starting to cut with a preset second processing parameter, where the second processing parameter is greater than the first processing parameter. The second processing parameters include, but are not limited to, table speed and linear speed, and are preset as required.

Specifically, in an embodiment, step S2 includes determining the visual zero coordinate as a midpoint value of the tool insertion position interval value, determining an extreme value of the tool insertion position interval value according to the visual error interval value, and ensuring that the tool insertion position interval value includes the visual error interval value. According to the silicon wafer cutting process, the cutter-entering position interval value is set, the position area corresponding to the visual error interval value is the area which is most likely to appear at the visual zero position due to the visual error, the cutter-entering position interval value is ensured to contain the visual error interval value, and the possibility that the cutter-entering TTV is affected by the visual cutting zero deviation can be further reduced. Specifically, in one embodiment, when the visual zero point coordinate is 0mm and the visual error interval value is [ -1.5mm, +1.5mm ], the value of the tool-in position interval is determined to be [ -2.5mm, +2.5mm ].

The method for obtaining the visual error interval value is not limited, and in an embodiment, the method for determining the visual error interval value includes the steps of:

s01, visually determining the contact position of the crystal bar 30 and the wire mesh 20 in the feeding direction of the crystal bar 30;

s02, determining the actual contact position of the crystal bar 30 and the cutting wire net 20;

The method for determining the visual error interval value may be, in addition to the above method, performing a sampling inspection during the cutting process of the plurality of crystal bars 30, wherein each sampling inspection includes visually determining the position of the crystal bar 30 contacting the wire net 20 in the feeding direction of the crystal bar 30; the actual position of the contact between the crystal bar 30 and the wire mesh 20 is accurately obtained by measuring and the like, and the difference between the coordinate of the visually determined position along the feeding direction and the coordinate of the actual position along the feeding direction is obtained to obtain an error value. And adding absolute values of the error values obtained by sampling inspection, and then averaging to obtain an error interval value for visual inspection.

It should be noted that the silicon wafer cutting process in the application only needs to preset a reasonable interval range, and then needs to perform multiple processing, and only needs to visually obtain a visual zero point position according to each processing, and determines a corresponding cutter entering position interval value by taking the visual zero point position as an interval internal zero point. Compared with the mode of determining the actual cutting zero point by adopting the modes of measuring and the like and then processing, the method is more convenient and faster, and is beneficial to improving the cutting efficiency.

In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and are not to be considered limiting of the invention.

Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.

In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.

In the present invention, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.

It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and the like as used herein are for illustrative purposes only and do not denote a unique embodiment.

The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.

The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.

Claims

1. A clamping arrangement for placement above a wire cutting web, the clamping arrangement comprising:

the cutting wire net clamping device comprises a body, a clamping groove and a pulling-up piece, wherein the clamping groove is formed in one side, close to the cutting wire net, of the body, the clamping groove is provided with a first clamping surface and a second clamping surface which are oppositely arranged in a first direction, the pulling-up piece is fixed at the bottom of the clamping groove in a second direction and is located between the first clamping surface and the second clamping surface, the pulling-up piece is provided with a first abutting surface, and the first direction is perpendicular to the second direction;

the workpiece plate is removably arranged on the body and comprises a clamping part and a connecting part, the clamping part is clamped between the first clamping surface and the second clamping surface, the connecting part is used for fixing a workpiece, a matching groove matched with the pulling part is formed in the clamping part, and the matching groove is provided with a second abutting surface which abuts against the first abutting surface in the second direction.

2. The clamping structure of claim 1, wherein the first clamping surface and the second clamping surface are both inclined towards the direction of the wire web.

3. The clamping structure as claimed in claim 2, wherein said first clamping face is fixedly provided with a first reinforcement portion to form a first reinforced clamping face parallel to said first clamping face; the second clamping surface is fixedly provided with a second reinforcing part to form a second reinforcing clamping surface parallel to the second clamping surface; the clamping part is clamped between the first reinforced clamping surface and the second reinforced clamping surface so as to provide acting force for pressing the first abutting surface downwards by the second abutting surface along the second direction.

4. The clamping structure of claim 3, wherein said first reinforcement portion comprises a first thickened layer welded at the first clamping face and said second reinforcement portion comprises a second thickened layer welded at the first clamping face.

5. An apparatus for cutting a silicon wafer, comprising the clamping structure according to any one of claims 1 to 4.

6. A silicon wafer cutting process is characterized by comprising the following steps:

7. The silicon wafer dicing process according to claim 6, further comprising the steps of:

and S4, continuing to move the crystal bar along the feeding direction until the instant position coordinate is separated from the cutter-entering position interval value, and starting to cut by using a preset second processing parameter, wherein the second processing parameter is larger than the first processing parameter.

8. The silicon wafer cutting process according to claim 6, wherein the step S2 comprises determining the visual zero coordinate as a midpoint value of the tool insertion position interval value, determining an extreme value of the tool insertion position interval value according to a visual error interval value, and ensuring that the tool insertion position interval value contains the visual error interval value.

9. The silicon wafer cutting process according to claim 8, wherein the method for determining the visual error interval value comprises the steps of:

10. The silicon wafer dicing process according to claim 8 or 9, wherein when the visual zero point coordinate is 0mm and the visual error interval value is [ -1.5mm, +1.5mm ], the blade-in position interval value is determined to be [ -2.5mm, +2.5mm ].