CN113574459A - Exposure system, exposure apparatus, and exposure method - Google Patents
Exposure system, exposure apparatus, and exposure method Download PDFInfo
- Publication number
- CN113574459A CN113574459A CN202080021585.9A CN202080021585A CN113574459A CN 113574459 A CN113574459 A CN 113574459A CN 202080021585 A CN202080021585 A CN 202080021585A CN 113574459 A CN113574459 A CN 113574459A
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- Prior art keywords
- exposure
- substrate
- information
- region
- exposure system
- Prior art date
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Images
Classifications
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
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- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
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- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
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- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
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- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
- G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2035—Exposure; Apparatus therefor simultaneous coating and exposure; using a belt mask, e.g. endless
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
- G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/50—Improvements relating to the production of bulk chemicals
- Y02P20/55—Design of synthesis routes, e.g. reducing the use of auxiliary or protecting groups
Abstract
[ problem ] to determine whether or not the removal of a protective group is sufficient after a lyophilic/lyophobic pattern is formed by exposing a layer of a compound having a photosensitive protective group to light and before a wiring pattern is formed. [ solution ] an exposure system for exposing a layer containing a photosensitive protecting group on a substrate to form a lyophilic/lyophobic pattern containing a lyophilic region and a lyophobic region in the layer, the exposure system comprising: an exposure device for exposing the layer; an inspection device that inspects a region exposed by the exposure device in a non-contact manner; and a control device for controlling one or more devices included in the exposure system based on the inspection result of the inspection device.
Description
Technical Field
The invention relates to an exposure system, an exposure apparatus and an exposure method.
Background
In recent years, in the production of fine devices such as semiconductor elements, integrated circuits, and devices for organic EL displays, there has been proposed a method of forming patterns having different surface characteristics on a substrate and fabricating fine devices by utilizing the difference in surface characteristics.
As a method of forming a pattern using the difference in surface characteristics on a substrate, for example, the following methods are available: hydrophilic regions and hydrophobic regions are formed on a substrate, and an aqueous solution of a functional material is applied to the hydrophilic regions. In this method, an aqueous solution of the functional material is spread wet only in the hydrophilic region, and thus a pattern of the functional material can be formed.
As a material capable of forming a hydrophilic region and a hydrophobic region on a substrate, for example, patent document 1 describes a fluorine-containing compound capable of changing a contact angle before and after light irradiation. After the light irradiation of such a compound, it is preferable to be able to determine whether or not the compound is sufficiently irradiated with light in order to favorably coat the functional material on the hydrophilic region.
Documents of the prior art
Patent document
Patent document 1: japanese patent No. 4997765
Disclosure of Invention
According to the 1 st aspect of the present invention, there is provided an exposure system for exposing a layer including a photosensitive protective group on a substrate to form a lyophilic/lyophobic pattern including a lyophilic region and a lyophobic region in the layer, the exposure system comprising: an exposure device for exposing the layer; an inspection device that inspects a region exposed by the exposure device in a non-contact manner; and a control device for controlling one or more devices included in the exposure system based on the inspection result of the inspection device. Further, an exposure system for forming a lyophilic/lyophobic pattern including a lyophilic region and a lyophobic region by exposing a layer including a compound having a photosensitive protecting group formed on a substrate, includes: an exposure device that exposes a layer containing a compound having a photosensitive protecting group; an inspection device that acquires information on the amount of detachment of the photosensitive protecting group in the region exposed by the exposure device at each measurement point; and a control device having a determination unit for determining whether or not exposure is satisfactory based on information of measurement points included in a region exposed by the exposure device.
According to the 2 nd aspect of the present invention, there is provided an exposure apparatus for forming a lyophilic/lyophobic pattern including a lyophilic region and a lyophobic region by exposing a layer including a compound having a photosensitive protecting group formed on a substrate, the exposure apparatus comprising: an exposure section that exposes a layer containing a compound having a photosensitive protecting group; an inspection section that acquires information on a release amount of the photosensitive protecting group in a region exposed by the exposure section at each measurement point; and a control unit having a determination unit for determining whether or not exposure is satisfactory based on information of the measurement points included in the region exposed by the exposure unit.
According to the 3 rd aspect of the present invention, there is provided an exposure method for forming a lyophilic/lyophobic pattern including a lyophilic region and a lyophobic region by exposing a layer including a compound having a photosensitive protecting group formed on a substrate to light, the exposure method comprising: exposing the layer containing the compound having a photosensitive protecting group; acquiring information on the amount of detachment of the photosensitive protecting group in the exposed region at each measurement point; and determining whether the exposure is good or not based on information of the measurement points included in the exposed region.
Drawings
Fig. 1 is a diagram illustrating an example of an exposure system according to embodiment 1.
Fig. 2(a) and 2(B) are images showing an example of measurement results obtained by an atomic force microscope.
Fig. 3(a) and 3(B) are diagrams schematically showing an example of a process of determining whether or not exposure is good based on the information on the lift-off amount.
Fig. 4 is a flowchart showing an example of an exposure method using the exposure system of embodiment 1.
Fig. 5 is a flowchart showing another example of an exposure method using the exposure system according to embodiment 1.
Fig. 6 is a flowchart showing another example of an exposure method using the exposure system according to embodiment 1.
Fig. 7 is a diagram showing an example of the exposure system according to embodiment 2.
Fig. 8 shows another example of the exposure system according to embodiment 2, in which the substrate is viewed from above.
Fig. 9 is a diagram showing another example of the exposure system according to embodiment 2.
Fig. 10 is a diagram showing an example of the exposure system according to embodiment 3.
Fig. 11 is a flowchart showing an example of an exposure method using the exposure system according to embodiment 3.
Fig. 12 is a diagram showing an example of the exposure system according to embodiment 4.
Fig. 13 is a flowchart showing an example of an exposure method using the exposure system according to embodiment 4.
Fig. 14(a) and 14(B) are diagrams showing an example of controlling the length of the conveyance path of the substrate in the plating device in the exposure system according to embodiment 4.
Fig. 15 is a diagram showing an example of the exposure system according to embodiment 5.
Fig. 16 is a diagram showing an example of the exposure apparatus according to embodiment 6.
Detailed Description
In the layer of the compound having a photosensitive protecting group, the protecting group is detached by exposure, and the portion becomes relatively lyophilic, thereby forming a lyophilic/lyophobic pattern. After the lyophilic/lyophobic pattern is formed, a plating catalyst is applied to the lyophilic portion to perform electroless plating, or a wiring forming material is applied to the hydrophilic portion to form a wiring pattern. In such a layer of a compound having a photosensitive protecting group, when the removal of the protecting group by exposure is insufficient, the degree of lyophilic formation is small. In such a state, it is difficult to obtain a good wiring pattern even when electroless plating or coating with a wiring forming material is performed. In the present embodiment, an exposure system, an exposure apparatus, and an exposure method are provided that can determine whether or not the removal of a protective group is sufficient after a lyophilic/lyophobic pattern is formed by exposing a layer of a compound having a photosensitive protective group to light and before a wiring pattern is formed.
Embodiments of the present invention will be described below with reference to the drawings. However, the present invention is not limited to the embodiments described below. In the drawings, for the purpose of illustrating the embodiments, a part of the drawings is shown with scale appropriately changed, such as enlarged or highlighted. In this embodiment, a case where a circuit board such as a flexible display, a flexible wiring, or a flexible sensor, which is an electronic device, is manufactured will be described as an example. Examples of the flexible display include an organic EL display and a liquid crystal display.
In the case of manufacturing the electronic device of the present embodiment, a so-called Roll-To-Roll (Roll-To-Roll) method is employed, in which a substrate is fed from a supply Roll in which a flexible sheet-like substrate (sheet substrate) is wound up in a Roll shape, various processes are continuously performed on the fed substrate, and then the substrate after the various processes is wound up by a recovery Roll. The substrate has a belt-like shape in which the substrate transfer direction is the long-side direction (long dimension) and the width direction is the short-side direction (short dimension). The substrate fed from the supply roll is subjected to various processes such as a pretreatment, an exposure process, and a post-treatment in order, and is taken up by the recovery roll. The substrate is not limited to being transported by a roll-to-roll method, and may be, for example, the following method: a plurality of rectangular substrates are continuously or intermittently conveyed in a predetermined direction, and various processes are performed during the conveyance.
< embodiment 1 >
Fig. 1 is a diagram illustrating an example of an exposure system according to embodiment 1. As shown in fig. 1, the exposure system 100 includes a coating apparatus CT, an exposure apparatus EX, a transport apparatus TR, an inspection apparatus DT, and a control apparatus CONT. The coating apparatus CT, the exposure apparatus EX, and the inspection apparatus DT are arranged in this order from, for example, the upstream side to the downstream side in the conveyance direction of the substrate FS by the conveyance apparatus TR. The coating device CT coats droplets of a compound having a photosensitive protecting group on the substrate FS to form a layer of the compound (hereinafter referred to as a compound layer). The coating device CT uses, for example, a droplet coating device such as an ink jet type coating device, a spin coating type coating device, a roll coating type coating device, or a slit coating type coating device. The coating device CT is provided with 1 or more coating devices. When a plurality of coating devices CT are arranged, they may be arranged along the conveyance direction of the substrate FS or along the width direction of the substrate FS, for example.
As the compound having a photosensitive protecting group, for example, a fluorine-containing compound represented by the following general formula (1) can be used.
[ solution 1]
[ in the general formula (1), X represents a halogen atom or an alkoxy group, R1Represents a hydrogen atom or a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, Rf1、Rf2Each independently is an alkoxy group, a siloxy group or a fluoroalkoxy group, and n represents an integer of 0 or more.]
In the general formula (1), X is a halogen atom or an alkoxy group. Examples of the halogen atom of X include a fluorine atom, a chlorine atom, a bromine atom, an iodine atom and the like. The number of carbon atoms of the alkoxy group of X is preferably 1 to 20, more preferably 1 to 10, further preferably 1 to 5, particularly preferably 1 to 3, and most preferably 1 or 2. More preferably, X is a halogen atom than X is an alkoxy group.
n represents an integer of 0 or more, and is preferably an integer of 1 to 20, more preferably an integer of 2 to 15, from the viewpoint of easiness of availability of starting materials. And n is preferably 3 or more, more preferably 4 or more.
In the above general formula (1), R1Is a hydrogen atom or a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms. As R1The alkyl group of (1) is preferably a straight chain having 1 to 5 carbon atomsSpecific examples of the linear or branched alkyl group include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a tert-butyl group, a pentyl group, an isopentyl group, and a neopentyl group. Examples of the cyclic alkyl group include groups obtained by removing 1 or more hydrogen atoms from polycycloalkane such as monocycloalkane, bicycloalkane, tricycloalkane and tetracycloalkane. In this embodiment, R1Preferably a hydrogen atom, methyl, ethyl, n-propyl or isopropyl.
In the above general formula (1), Rf1、Rf2Each independently is an alkoxy, siloxy, or fluoroalkoxy group. In the above general formula (1), Rf1、Rf2The fluoroalkoxy group of (3) is preferably an alkoxy group having 3 or more carbon atoms, and may be a partially fluorinated alkoxy group or a perfluoroalkoxy group. In the present embodiment, a partially fluorinated fluoroalkoxy group is preferable.
In the present embodiment, R isf1、Rf2The fluoroalkoxy group of (A) includes, for example, -O- (CH)2)n f1-(Cn f2F2n f2 +1) The group shown. N is abovef1Is an integer of 0 or more, nf2Is an integer of 1 or more. In this embodiment, nf1Preferably 0 to 30, more preferably 0 to 15, and particularly preferably 0 to 5. In this embodiment, n representsf2Preferably 1 to 30, more preferably 1 to 15, further preferably 1 to 10, and particularly preferably 1 to 6.
Specific examples of the fluorine-containing compound represented by the general formula (1) are shown below.
[ solution 2]
As the compound having a photosensitive protecting group, for example, a fluorine-containing compound represented by the following general formula (2) can be used.
[ solution 3]
[ in the general formula (2), R1Represents a hydrogen atom or a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, Rf1、Rf2Each independently is an alkoxy, siloxy, or fluoroalkoxy group.]
With respect to R in the general formula (2)1、Rf1、Rf2Description of (1) and with respect to R in the above general formula (1)1、Rf1、Rf2The same description applies.
< method for producing fluorine-containing Compound >
The fluorine-containing compound represented by the general formula (1) is preferably produced using the fluorine-containing compound represented by the general formula (2) as a raw material (intermediate).
Examples of the solvent used in the following step include ethyl acetate, butyl acetate, acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, tetrahydrofuran, dioxane, N, N-dimethylformamide, N, N-dimethylacetamide, benzene, toluene, acetonitrile, dichloromethane, chloroform, dichloroethane, methanol, ethanol, 1-propanol, 2-propanol, and 1-butanol. These solvents may be used alone, or 2 or more kinds thereof may be used in combination.
The fluorine-containing compound represented by the general formula (2) can be obtained, for example, through the following steps.
[ solution 4]
In the above formula, R1、Rf1And Rf2And R in the above general formula (1)1、Rf1And Rf2Same, I-Rf1’、I-Rf2R in `f1’、Rf2' are independently from the above Rf1、Rf2The same is true.
[ solution 5]
In the above formula, R1、Rf1And Rf2And R in the above general formula (1)1、Rf1And Rf2The same is true.
[ solution 6]
In the above formula, R1、Rf1And Rf2And R in the above general formula (1)1、Rf1And Rf2The same is true.
[ solution 7]
In the above reaction scheme, with respect to R1、Rf1、Rf2With respect to R in the above general formula (1)1、Rf1、Rf2The same description applies.
The fluorine-containing compound represented by the general formula (1) can be obtained, for example, by the following steps. X, R in the following formula1、Rf1、Rf2N and X, R in the above general formula (1)1、Rf1、Rf2And n are the same as described above.
[ solution 8]
As the compound having a photosensitive protecting group, a compound described in international publication WO2015/029981 can be used.
The exposure apparatus EX exposes the compound layer formed on the substrate FS by irradiating the substrate FS with the exposure light SP, thereby forming a lyophilic/lyophobic pattern including a lyophilic region and a lyophobic region. That is, the compound layer formed on the substrate FS has liquid repellency. When the compound layer is irradiated with exposure light SP, the photosensitive protecting group is released, and the portion (region) from which the photosensitive protecting group is released loses lyophobicity. By forming the portion having lyophobic property and the portion having lyophilic property in this manner, a lyophilic/lyophobic pattern is formed. The exposure apparatus EX can be, for example, a so-called raster scan type exposure apparatus of a direct scan type without using a mask. The exposure apparatus EX can adjust the focal position by adjusting the optical system including the lens element GL. The configuration of the exposure apparatus is as follows.
Examples of the exposure light SP irradiated by the exposure apparatus EX include ultraviolet rays. The exposure light SP preferably includes light having a wavelength included in a range of 200 to 450nm, and more preferably includes light having a wavelength included in a range of 320 to 450 nm. The exposure light SP is preferably light having a wavelength of 365 nm. Light having these wavelengths can efficiently release the photosensitive protecting group. Examples of the light source include a low-pressure mercury lamp, a high-pressure mercury lamp, an ultrahigh-pressure mercury lamp, a xenon lamp, and a sodium lamp; a gas laser of nitrogen or the like, a liquid laser of an organic dye solution, a solid laser containing rare earth ions in an inorganic single crystal, and the like.
As a light source other than the laser for obtaining monochromatic light, light having a specific wavelength obtained by extracting a broad band line spectrum or a continuous spectrum with an optical filter such as a band-pass filter or a cut-off filter may be used. For the reason of being able to irradiate a large area at a time, a high-pressure mercury lamp or an ultrahigh-pressure mercury lamp may be used as the light source.
The transfer device TR transfers the substrate FS. The conveying device TR has a feeding roller RL1, a take-up roller RL2, and a driving device AC. The delivery roller RL1 is formed by winding an unprocessed substrate FS, and is disposed on the upstream side in the conveyance direction of the substrate FS. The winding roller RL2 is disposed on the downstream side in the conveyance direction of the substrate FS to wind the substrate FS which is fed from the feeding roller RL1 and processed. The driving device AC rotationally drives the take-up roller RL 2. The winding roller RL2 winds the substrate FS in rotation, and thereby can move the substrate FS in the conveyance direction. The driving device AC may rotate the delivery roller RL1 in synchronization with the rotation of the winding roller RL 2.
In addition, 1 or more transfer rollers may be disposed below the moving substrate FS to guide the movement of the substrate FS. For example, the transport rollers may be disposed below the coating device CT, the exposure device EX, and the inspection device DT, and define a gap between the coating device CT and the substrate FS, a gap between the exposure device EX and the substrate FS, and a gap between the inspection device DT and the substrate FS. The transfer roller may be provided so as to be movable in the normal direction of the substrate FS, and the gap may be adjusted.
For example, a resin film or foil (foil) made of metal such as stainless steel or alloy is used as the substrate FS. As the material of the resin film, for example, at least 1 or more of polyolefin resin, polyorganosiloxane resin, polyethylene resin, polypropylene resin, polyester resin, ethylene-vinyl copolymer resin, polyvinyl chloride resin, cellulose resin, polyamide resin, polyimide resin, polycarbonate resin, polystyrene resin, and vinyl acetate resin can be used. The thickness and rigidity (young's modulus) of the substrate FS may be set to a range in which, for example, no crease or irreversible wrinkle due to bending occurs in the substrate FS when passing through the movement path facing the coating apparatus CT, or/and a range in which no crease or irreversible wrinkle due to bending occurs in the substrate FS when passing through the movement path facing the exposure apparatus EX. As a base material of the substrate FS, a film of PET (polyethylene terephthalate) or PEN (polyethylene naphthalate) having a thickness of about 25 to 200 μm can be used as a representative of suitable sheet substrates.
Since the substrate FS may be heated in each step, it is preferable to select a substrate FS made of a material whose thermal expansion coefficient does not increase significantly. For example, the coefficient of thermal expansion can be suppressed by mixing an inorganic filler in a resin film. The inorganic filler may be, for example, titanium oxide, zinc oxide, aluminum oxide, silicon oxide, or the like. The substrate FS may be a single-layer body of an extra thin glass having a thickness of about 100 μm manufactured by a float method or the like, or may be a laminate body in which the above resin film, foil, or the like is bonded to the extra thin glass.
The flexibility (flexibility) of the substrate FS means a property that the substrate FS can be bent without being sheared or broken even if a force of a self weight is applied to the substrate FS. In addition, the flexibility includes a property of bending by a force of a self weight. The degree of flexibility varies depending on the material, size, and thickness of the substrate FS, the layer structure formed on the substrate FS, and the environment such as temperature and humidity. The flexibility range is defined as a range in which the substrate FS can be smoothly transferred without causing a fold or a damage (breakage or breakage) due to bending when the substrate FS is accurately wound around a transfer direction switching member such as a feeding roller RL1, a winding roller RL2, various transfer rollers, or a rotary drum provided in a moving path.
The inspection apparatus DT acquires information on the amount of release of the photosensitive protecting group (hereinafter referred to as release amount-related information) in a region (hereinafter referred to as an exposure region W) exposed by the exposure apparatus EX at each measurement point. The inspection apparatus DT can inspect at least one of the film thickness, the mass, the atomic force, and the absorption of a specific wavelength of the region exposed by the exposure apparatus EX. The inspection device DT preferably inspects the surface state in a non-contact manner. The region not exposed by the exposure device EX is referred to as a non-exposure region N. The inspection apparatus DT may set coordinates in the conveyance direction of the substrate FS and the width direction of the substrate FS, for example, and set measurement points for each set coordinate. The inspection apparatus DT transmits the measurement result to the control apparatus CONT. Examples of the inspection apparatus DT include various measuring devices such as an ultraviolet-visible spectrophotometer, an infrared spectrophotometer, an Atomic Force Microscope (AFM), a probe profiler, an optical inspection apparatus, a scanning electron Microscope, a contact angle measuring instrument, a mass spectrometer, and an X-ray photoelectron spectrometer.
The inspection apparatus DT can specify the exposure area W and acquire information on the amount of separation by acquiring information on the position of the exposure area W on the surface of the substrate FS by the control apparatus CONT or the like. However, the inspection device DT may also measure the non-exposure area N in the surface of the substrate FS.
When an ultraviolet-visible spectrophotometer is used as the inspection device DT, information on the amount of separation can be acquired from the change in absorbance of the specific ultraviolet light in the exposure region W. Since the photosensitive protecting group in the exposed region W is released, the photosensitive protecting group is smaller than that in the unexposed region N. Therefore, information on the amount of detachment can be obtained from the change in the degree of absorption of ultraviolet light by the photosensitive protecting group. When an infrared spectrophotometer is used as the inspection device DT, information on the amount of separation can be acquired from the change in absorption of specific infrared light from the functional group in the exposure region W. Since the photosensitive protecting group in the exposed region W is released, the photosensitive protecting group is smaller than that in the unexposed region N. Therefore, specific infrared light that can be absorbed by the functional group of the photosensitive protecting group can be irradiated, and information on the amount of desorption can be acquired from the change in the amount of absorption of the infrared light.
In addition, in the case of using an atomic force microscope as the inspection device DT, the information on the amount of detachment can be acquired by the adhesion force in the exposure region W. When the compound layer formed on the substrate FS is exposed to light and the protective group is detached, the adhesion is increased. Therefore, in the case of using an atomic force microscope, the release amount-related information can be acquired from the change in the cantilever adhesion force in the exposure region W. The cantilever of the atomic force microscope may be, for example, in a spherical (sphere) form (spherical or curved) form in a portion in contact with the exposure region W, so as to prevent (suppress) the exposure region W from being damaged.
Fig. 2(a) and 2(B) are images showing an example of measurement results obtained by an atomic force microscope. Fig. 2(a) and 2(B) are images represented by 1 image obtained by joining together 4 images. FIG. 2(A) shows that the adhesion of the spherical cantilever is 2000mJ/cm2The image obtained by visualizing the measurement result in the case of (1). FIG. 2(B) shows that the adhesion of the cantilever was 500mJ/cm2The image obtained by visualizing the measurement result in the case of (1). A compound layer formed on the substrate FS is exposedAnd when the photosensitive protecting group is removed, the adhesive force of the exposed area W is larger than that of the non-exposed area N.
As a result, as shown in fig. 2(a) and 2(B), the exposed region W is an image visualized in accordance with the amount of release of the photosensitive protecting group, unlike the non-exposed region N. In the examples shown in fig. 2(a) and 2(B), the exposed region W appears more whitish than the non-exposed region N, and it is confirmed that a portion having a different whiteness is included in the exposed region W. Therefore, by performing image processing (for example, comparison processing of brightness, color, and threshold) based on the image, it is possible to distinguish the exposed area W and the non-exposed area N, and acquire the amount of release of the photosensitive protective group (i.e., release amount-related information) in the exposed area W. In the case where an atomic force microscope is used as the inspection apparatus DT, information on the amount of separation in the exposure region W can be acquired from the film thickness of the exposure region W. In addition, in the case of using an atomic force microscope, information on the amount of release in the exposure region W can also be acquired from a change in film thickness acquired by bringing the cantilever into contact with the exposure region W.
In the case of using a probe profiler as the inspection apparatus DT, information on the amount of separation is acquired from the change in film thickness acquired by the contact of the contact with the exposure field W. Since the photosensitive protecting group is detached in the exposed region W, the film thickness is slightly reduced. Therefore, by detecting the film thickness change in the exposure region W, the information relating to the amount of separation can be acquired. When an optical inspection apparatus is used as the inspection apparatus DT, information relating to the amount of separation is acquired from a change in film thickness obtained by irradiating the exposure region W with light of a specific wavelength. As described above, since the film thickness in the exposure region W is slightly reduced, the film thickness of the exposure region W is detected by irradiating light of a specific wavelength, and information relating to the amount of separation can be acquired.
In the case of using a Scanning Electron Microscope (SEM) as the inspection apparatus DT, the information on the amount of detachment is acquired from a change in secondary electrons or reflected electrons generated by irradiating the exposure area W with an electron beam. The secondary electrons or reflected electrons generated by the irradiation with the electron beam vary depending on the amount of release of the photosensitive protecting group in the exposed region W. Therefore, by detecting a change in the secondary electrons or reflected electrons in the exposure region W, information relating to the amount of separation can be acquired. In the case of using a contact angle measuring instrument as the inspection device DT, the information on the amount of detachment is acquired by the contact angle or the surface tension in the exposure region W. The contact angle (static contact angle, dynamic contact angle, wettability) of the specific liquid (reagent) varies depending on the amount of the photosensitive protective group released in the exposed region W. Therefore, by detecting the change in the contact angle in the exposure region W, the information relating to the amount of detachment can be acquired.
In the case of using a mass spectrometer as the inspection device DT, information on the amount of detachment is acquired from a change in the mass detection intensity of the photosensitive protecting group in the exposure region W. Since the photosensitive protecting group is detached in the exposed region W, the quality detection intensity of the photosensitive protecting group changes. Therefore, by detecting the change in the mass detection intensity in the exposure field W, the detachment amount-related information can be acquired. When an X-ray photoelectron spectrometer is used as the inspection device DT, information relating to the amount of separation is obtained from the change in the detection intensity of the specific element derived from the photosensitive protecting group in the exposure region W. Since the photosensitive protecting group is detached in the exposed region W, the detection intensity of the specific element from the photosensitive protecting group changes. Therefore, by detecting the intensity of the specific element in the exposure field W, the release amount-related information can be acquired.
The control device CONT controls one or more devices among the devices included in the exposure system based on the inspection result obtained by the inspection device DT. For example, the coating apparatus CT, the exposure apparatus EX, the transfer apparatus TR, and the inspection apparatus DT are controlled as a whole. The control apparatus CONT has an application control unit 61, an exposure control unit 62, a conveyance control unit 63, and a determination unit 64. The coating control section 61 controls the operation of the coating device CT. The exposure control unit 62 controls the operation of the exposure apparatus EX. The transport control section 63 controls the operation of the transport device TR. The determination unit 64 determines whether or not the exposure is good based on the measurement result of the inspection apparatus DT. The determination unit 64 determines whether or not the exposure is good based on information (for example, information relating to the amount of separation) of the measurement points included in a specific region of the region (exposure region W) exposed by the exposure apparatus EX. The determination section 64 determines whether or not exposure is good based on information on the amount of detachment per unit area in the compound layer, for example. Fig. 3(a) and 3(B) are diagrams schematically showing an example of a process of determining whether or not exposure is good based on the information on the lift-off amount. Fig. 3(a) and 3(B) show a case where a part of the compound layer on the substrate FS is exposed to form an exposed region W and a non-exposed region N.
The determination section 64 selects the exposed area W and the non-exposed area N in the compound layer by, for example, performing image processing or the like on the images shown in fig. 2(a) and 2 (B). Next, as shown in fig. 3(a), the determination unit 64 divides the detected exposure field W into specific unit areas Wa. In the present embodiment, the unit area Wa is square, but is not limited to this form, and may be rectangular, other polygonal shapes such as triangular, or other shapes such as circular, elliptical, or oblong shapes. In the example shown in fig. 3(a), the determination unit 64 sets the unit areas Wa so that the areas of the unit areas are equal to each other, but it is not always necessary to make the areas of all the unit areas Wa equal to each other.
Each unit area Wa includes measurement results of a plurality of measurement points detected by the inspection device DT. The determination unit 64 divides the exposure area W into unit areas Wa having the same area, and calculates information on the amount of separation for each unit area Wa based on the measurement results of a plurality of measurement points (for example, absorbance in the case of an ultraviolet-visible spectrophotometer, and adhesion in the case of an atomic force microscope). The determination unit 64 may calculate the disengagement amount-related information based on, for example, an average value of measurement results at a plurality of measurement points. Fig. 3(B) shows an example in which the total of the measurement results for each unit area Wa is represented by 5 ranks of 1 to 5 as the detachment amount-related information. "1" indicates that the total of measurement results is minimum, and "5" indicates that the total of measurement results is maximum.
The determination unit 64 compares the calculated detachment amount (a value of 1 to 5 expressed in 5 levels) with a threshold value set for each measurement device of the inspection apparatus DT, for example. The determination section 64 determines whether or not the photosensitive protecting group is sufficiently detached, that is, whether or not the exposure is satisfactory, based on the comparison result. For example, when an ultraviolet-visible spectrophotometer is used as the inspection device DT, if the absorbance of a certain unit area Wa is equal to or greater than a threshold value, the determination unit 64 determines that the unit area Wa is an exposure failure. When the atomic force microscope is used as the inspection apparatus DT, if the adhesion of a certain unit area Wa is equal to or less than the threshold value, the determination unit 64 determines that the unit area Wa is an exposure failure.
Next, the determination unit 64 determines whether or not the exposure in the exposure area W is good based on the evaluation for each unit area Wa. For example, when the number of unit areas Wa of an exposure failure is determined to exceed a specific percentage (e.g., 20%, 40%, etc.) in the exposure area W, the determination unit 64 may determine the exposure area W as an exposure failure, and may determine the exposure area W as an exposure failure even if the number of unit areas Wa of an exposure failure is determined to be 1. The specific method of determining whether the exposure of the exposure field W is satisfactory is not limited to the above method. The determination unit 64 may determine whether or not the exposure is good for each unit area Wa, and may determine the result as a result of the determination regarding the exposure of the exposure area W.
Next, the operation of the exposure system 100 configured as described above will be described. Fig. 4 is a flowchart showing an example of an exposure method by the exposure system 100. In the exposure system 100, while the substrate FS is conveyed in the conveyance direction by the conveyance device TR, a liquid for forming a compound layer, that is, a layer of a compound having a photosensitive protective group is applied on the substrate FS by the coating device CT, and the compound layer is formed on the substrate FS. The coating apparatus CT may be provided with a drying apparatus for drying the substrate FS after applying the liquid on the substrate FS, a heating apparatus for heating the substrate FS, and a cleaning apparatus for cleaning the substrate FS.
The compound layer formed on the substrate FS reaches the exposure apparatus EX on the downstream side in the conveyance direction with the movement of the substrate FS by the conveyance apparatus TR. As shown in fig. 4, the exposure apparatus EX irradiates the substrate FS coated with the compound layer with exposure light SP to expose a specific region of the compound layer (step S01). In step S01, the exposure light SP (spot light having a specific diameter) is scanned in the width direction of the substrate FS by the exposure apparatus EX while the substrate FS is conveyed in the conveyance direction by the conveyance apparatus TR. Thus, the exposure light SP is irradiated to a specific region in the transport direction and the width direction of the substrate FS, and an exposure region W is formed. Note that, a part of the irradiation area of the exposure light SP may be overlapped by adjusting the scanning speed of the exposure light SP or the transfer speed of the substrate FS for each scanning of the exposure light SP.
Instead of the configuration in which the exposure apparatus EX is configured to collectively irradiate the exposure light SP on a specific region, the exposure apparatus EX may be configured to scan the exposure light SP. The exposure light SP is not limited to a method of irradiating the substrate FS while the substrate FS is conveyed in the conveyance direction, and may be a method of moving the substrate FS in steps, that is, irradiating the exposure light SP from the exposure apparatus EX while stopping the movement of the substrate FS, and moving the next exposure area to the exposure apparatus EX.
The exposure region formed on the compound layer reaches the inspection device DT on the downstream side in the conveyance direction as the conveyance device TR moves the substrate FS. The inspection apparatus DT acquires information on the amount of release of the photosensitive protecting group in the exposure area W exposed by the exposure apparatus EX at each measurement point (step S02). In step S02, the inspection device DT acquires information on the amount of separation in the exposure area while the substrate FS is conveyed in the conveyance direction by the conveyance device TR. The inspection apparatus DT transmits the measurement result to the control apparatus CONT. When the exposure field W is irradiated with the exposure light SP by moving the substrate FS step by step, the inspection device DT can acquire information on the amount of separation at the time when the substrate FS stops.
The control device CONT determines whether or not the exposure to the substrate FS is good based on the measurement result from the inspection device DT (step S03). In step S03, the control device CONT first calculates information (for example, information relating to the amount of separation) of the measurement points included in a specific area of the area (exposure area W) exposed by the exposure device EX. The control device CONT calculates information on the amount of separation per unit area, for example. Then, the determination unit 64 of the control apparatus CONT determines whether or not the exposure is good based on the calculated information on the amount of separation. The control device CONT may output the determination result by the determination unit 64 to a display device or the like, not shown, or may output the determination result to an external management device or the like. The user can easily confirm whether the exposure in the exposure area W is good or not by looking at the result of the determination by the determination section 64 on a display device or the like.
Fig. 5 is a flowchart showing another example of an exposure method by the exposure system 100. In the example shown in fig. 5, the exposure system 100 performs the processing of step S01 to step S03 as described above. Thereafter, the control device CONT detects whether or not the determination unit 64 has determined that the exposure is defective (step S04).
As a result of the detection in step S04, when the determination unit 64 determines that the exposure is defective (yes in step S04), the exposure control unit 62 controls the exposure apparatus EX based on the calculated information on the amount of separation (step S05). In step S05, the exposure control unit 62 changes the exposure conditions in the exposure apparatus EX, for example. In this case, the exposure conditions include at least one of changing the intensity of the exposure light SP at the time of exposure by the exposure apparatus EX, changing the focal position of the exposure light SP, changing the irradiation time of the exposure light SP, and changing the overlap amount of the exposure light SP. The irradiation time of the exposure light can be changed by changing the scanning speed of the exposure light SP, for example.
The exposure control section 62 controls the intensity of the exposure light, the focal position, the irradiation time, the amount of overlap, and the like so that a portion of the exposure area W that is considered to be defective in exposure reaches an appropriate exposure amount, for example, based on the portion and the degree of defective exposure (e.g., the degree of insufficient exposure amount). As a result, the exposure in the exposure apparatus EX is improved, and the exposure failure in the exposure region W can be eliminated. As a result of the detection in step S04, when the determination unit 64 does not determine that the exposure is defective (no in step S04), the control apparatus CONT (exposure control unit 62) may not control the exposure apparatus EX.
Fig. 6 is a flowchart showing another example of an exposure method by the exposure system 100. In the example shown in fig. 6, the exposure system 100 performs the processing of step S01 to step S03 in the same manner as described above, and detects whether or not the determination unit 64 has determined that the exposure is defective (step S04). As a result of the detection in step S04, when the determination unit 64 determines that the exposure is defective (yes in step S04), the conveyance controller 63 controls the conveyance speed of the substrate FS by the conveyance device TR based on the calculated information on the amount of separation (step S06). In step S06, the conveyance controller 63 may slow down the conveyance speed of the substrate FS, for example, to extend the irradiation time of the exposure light SP in the exposure apparatus EX. As a result of the detection in step S04, when the determination unit 64 does not determine that the exposure is defective (no in step S04), the control device CONT (transfer control unit 63) may not control the transfer device TR.
In addition, in the flowcharts shown in fig. 4 and 5, in the case where it is determined that the exposure failure is caused in step S04, the control apparatus CONT may acquire information (for example, a position in the substrate FS, etc.) specifying the exposure area W determined to be the exposure failure from the inspection apparatus DT. Since the exposure area W determined to be defective in exposure is directly wound by the winding roller RL2, it is difficult to determine which portion is defective in exposure thereafter. By acquiring the information for specifying the exposure area W as described above, it is possible to cope with this portion by omitting the subsequent process or the like, and the processing efficiency can be improved.
According to the present embodiment, even when it is difficult to determine an exposure failure from an image of the exposure area W or the like, the exposure failure can be determined by the determination of the determination unit 64 based on the measurement result of the inspection device DT, and therefore, the user can easily confirm the exposure failure by confirming the determination of the determination unit 64.
< embodiment 2 >
Fig. 7 is a diagram showing an example of the exposure system 200 according to embodiment 2. The exposure system 200 shown in fig. 7 is the same as the exposure system 100 of embodiment 1 in that it includes a coating device CT, an exposure device EX, and a transfer device TR, but differs from the above-described embodiments in that it includes a plurality of inspection devices DT. The same components as those in the above embodiments are denoted by the same reference numerals, and descriptions thereof are omitted or simplified. In the exposure system 200 shown in fig. 7, the plurality of inspection apparatuses DT are arranged downstream of the exposure apparatus EX in the conveyance direction of the substrate FS. Fig. 7 shows a configuration in which 2 inspection devices DT are arranged, but the present invention is not limited to this configuration, and 3 or more inspection devices DT may be arranged. The same inspection apparatus DT may be used for a plurality of inspection apparatuses DT, or different inspection apparatuses DT may be used for the plurality of inspection apparatuses DT.
The plurality of inspection devices DT are arranged in line in the conveyance direction of the substrate FS, for example. In this case, the inspection device DTa disposed on the upstream side in the conveyance direction of the substrate FS may be used as a main device, and the inspection device DTb disposed on the downstream side may be used as a sub-device or a backup device, or a part of the exposure area W to be inspected may be measured by the inspection device DTa on the upstream side, and the remaining part of the exposure area W may be measured by the inspection device DTb on the downstream side.
Fig. 8 is a diagram showing another example of the exposure system according to embodiment 2. Fig. 8 shows a state where the substrate FS in the exposure system 200A is viewed from above. In the exposure system 200A shown in fig. 8, 2 inspection devices DT are arranged in a row along the width direction of the substrate FS (the direction orthogonal to the conveyance direction). An inspection apparatus DTa measures a region from the center to one end edge in the width direction of the substrate FS. The other inspection apparatus DTb measures a region from the center to the other edge in the width direction of the substrate FS. The inspection devices DTa and DTb transmit the measurement results to the control device CONT. The control device CONT calculates information on the lift-off amount based on the measurement results of the inspection devices DTa and DTb, and determines whether or not the exposure is good.
Fig. 9 is a diagram showing another example of the exposure system according to embodiment 2. Fig. 9 shows a state where the substrate FS in the exposure system 200B is viewed from above. In the exposure system 200B shown in fig. 9, the same number of exposure apparatuses EX and inspection apparatuses DT, for example, 3 exposure apparatuses EX and inspection apparatuses DT are provided, respectively, and the exposure apparatuses EX and inspection apparatuses DT are arranged so as to correspond to each other. Note that the control device CONT is not described in the exposure system 200B of fig. 9.
For example, the 1 st exposure device EXa is disposed at the center in the width direction of the substrate FS. Further, the remaining 2 exposure apparatuses EXb and EXc are disposed at both ends in the width direction of the substrate FS on the upstream side in the conveyance direction of the substrate FS with respect to the exposure apparatus EXa. The exposure device EXa irradiates the central region in the width direction of the substrate FS with exposure light SP. The exposure apparatuses EXb and EXc irradiate the exposure light SP on the regions on both ends of the substrate FS in the width direction. Therefore, the exposure light SP is shared and irradiated to the exposure area W by the 3 exposure apparatuses EXa to EXc for each of the center and both ends of the substrate FS in the width direction.
Further, 1 inspection apparatus DTa is disposed at the center in the width direction of the substrate FS on the downstream side in the conveyance direction of the substrate FS with respect to the 3 exposure apparatuses EXa to EXc. Further, the remaining 2 inspection devices DTb and DTc are disposed at both ends in the width direction of the substrate FS on the upstream side in the conveyance direction of the substrate FS with respect to the inspection device DTa. That is, the arrangement of the 3-stage inspection apparatuses DTa to DTc is the same as that of the 3-stage exposure apparatuses EXa to EXc. The inspection apparatus DTa measures the center area of the substrate FS in the width direction in the exposure area W. The inspection devices DTb and DTc measure regions at both ends of the exposure region W in the width direction of the substrate FS, respectively. Therefore, the exposure field W is shared and measured by the 3 inspection devices DTa to DTc for each of the center and both ends of the substrate FS in the width direction.
The 3 inspection apparatuses DTa to DTc each transmit the measurement result to the control apparatus CONT. The control device CONT calculates the information on the lift-off amount based on the measurement results of the inspection devices DTa to DTc, and determines whether the exposure is good or not. With this configuration, the controller CONT individually determines whether or not exposure is satisfactory for each of 3 areas, namely, the central area and the end areas of the substrate FS in the width direction measured by the 3 inspection apparatuses DTa to DTc.
When any one of the 3 areas is determined to be an underexposure, the control device CONT controls the exposure devices EXa to EXc arranged in the area based on the information on the amount of separation. For example, the control device CONT may control the exposure device EXa based on the measurement result of the inspection device DTa, control the exposure device EXb based on the measurement result of the inspection device DTb, and control the exposure device EXc based on the measurement result of the inspection device DTc. When any of the 3 inspection apparatuses DTa to DTc determines that an exposure failure has occurred, the control apparatus CONT may control all of the exposure apparatuses EXa to EXc, or may control the exposure apparatuses EXa to EXc disposed in an area that is not determined to be an exposure failure.
According to the present embodiment, since the exposure field W is divided and measured by the plurality of inspection devices DT, the processing load of 1 inspection device DT can be reduced. As a result, the moving speed of the substrate FS can be increased, and the processing efficiency of the substrate FS can be improved.
< embodiment 3 >
Fig. 10 is a diagram showing an example of an exposure system 300 according to embodiment 3. The exposure system 300 shown in fig. 10 is the same as the exposure systems 100 and 200 of the above embodiments in that it includes the coating device CT, the transport device TR, and the inspection device DT, but is different from the above embodiments in that a plurality of exposure devices EX are provided on the upstream side and the downstream side of the inspection device DT in the transport direction of the substrate FS. The same components as those in the above embodiments are denoted by the same reference numerals, and descriptions thereof are omitted or simplified.
In the exposure system 300 shown in fig. 10, the plurality of exposure apparatuses EX includes the 1 st exposure apparatus EX1 and the 2 nd exposure apparatus EX 2. The 1 st exposure apparatus EX1 is disposed upstream of the inspection apparatus DT in the conveyance direction of the substrate FS. The 2 nd exposure apparatus EX2 is disposed downstream of the inspection apparatus DT in the conveyance direction of the substrate FS. The 1 st exposure apparatus EX1 and the 2 nd exposure apparatus EX2 have the same configuration as the exposure apparatus EX. The 1 st exposure apparatus EX1 and the 2 nd exposure apparatus EX2 may have the same configuration or different configurations. The control apparatus CONT further includes a 1 st exposure control unit 65 for controlling the 1 st exposure apparatus EX1, and a 2 nd exposure control unit 66 for controlling the 2 nd exposure apparatus EX 2.
Fig. 11 is a flowchart showing an example of an exposure method by the exposure system 300. In the example shown in fig. 11, the exposure system 300 performs the processing of step S01 to step S03 as in the above-described embodiment. The exposure process in step S01 was performed by the 1 st exposure apparatus EX 1. After step S03, the controller CONT detects whether or not the determination unit 64 has determined that the exposure is defective (step S04).
In step S04, when the determination unit 64 determines that the exposure is defective (yes in step S04), the control unit CONT re-exposes the exposure field W determined to be defective by the determination unit 64 to the second exposure apparatus EX2 (step S07). In step S07, the 2 nd exposure control unit 66 controls the 2 nd exposure apparatus EX2 based on the calculated information on the amount of separation. The 2 nd exposure control unit 66 adjusts, for example, the intensity of the exposure light SP, the focal position of the exposure light SP, the irradiation time of the exposure light SP, and the overlap amount of the exposure light SP at the time of exposure by the 2 nd exposure apparatus EX2 based on the calculated information on the deviation amount. By exposing the exposure area W determined to be defective in exposure by the 2 nd exposure apparatus EX2, all or a part of the defective exposure in the exposure area W can be eliminated.
When the determination unit 64 determines that the exposure is defective (yes in step S04), the control device CONT may control the 1 st exposure apparatus EX1 or the transport apparatus TR by the 1 st exposure control unit 65 based on the calculated information on the separation amount in addition to the exposure by the 2 nd exposure apparatus EX 2. The control unit CONT can control the exposure light SP to be irradiated by the exposure unit 2 EX2 on the portion of the exposure area W that is not properly exposed (for example, the unit area Wa shown in fig. 3). As a result, it is possible to avoid irradiating the exposure light SP to the portion that does not need to be re-exposed by the exposure apparatus EX2 No. 2.
According to the present embodiment, when the inspection apparatus DT determines that the exposure area W is an exposure failure, the exposure area W with the exposure failure is again exposed by the 2 nd exposure apparatus EX2, and therefore the exposure area W can be prevented from moving to the subsequent processing in a state with the exposure failure. As a result, a decrease in the yield of the substrate FS can be suppressed. In the present embodiment, the inspection apparatus DT may be disposed downstream of the 2 nd exposure apparatus EX2, and after exposure is performed by the 2 nd exposure apparatus EX2, the determination unit 64 may determine whether or not an exposure failure has occurred (whether or not an exposure failure remains).
< embodiment 4 >
Fig. 12 shows an example of an exposure system 400 according to embodiment 4. The exposure system 400 shown in fig. 12 is different from the embodiments 1 to 3 in that it includes a plating device MK in addition to a coating device CT, an exposure device EX, a transport device TR, and an inspection device DT. In the exposure system 400 shown in fig. 12, the plating device MK is disposed downstream of the inspection device DT in the conveyance direction of the substrate FS. The plating apparatus MK performs a plating process (for example, an electroless plating process) on the substrate FS on which the lyophilic/lyophobic pattern is formed, by using the exposure apparatus EX.
The plating device MK has a plating catalyst bath MKa for plating a catalyst bath on the substrate FS, a plating bath MKb for plating the substrate FS, and a plurality of conveyance rollers MKc. The plating catalyst tank MKa is disposed on the upstream side in the conveyance direction of the substrate FS, and applies a plating catalyst to the lyophilic section of the lyophilic/lyophobic pattern formed on the substrate FS. That is, in the exposed area W of the substrate FS, the photosensitive protecting group is detached to make the area lyophilic, and in the non-exposed area N, the photosensitive protecting group is not detached to make the area lyophilic, so that the plating catalyst liquid adheres to the exposed area W. The plating catalyst liquid stored in the plating catalyst tank MKa is stored, for example, by selecting any plating catalyst liquid required in the electroless plating treatment.
The plating tank MKb is disposed downstream in the conveyance direction of the substrate FS, and performs electroless plating on the lyophilic section of the substrate FS to which the plating catalyst is applied. That is, since the plating catalyst is applied to the exposed area W of the substrate FS, the plating treatment can be performed on the exposed area W. As a result, a wiring pattern is formed on the substrate FS by plating. The substrate FS is wound by a winding roll RL2 and moved in the plating device MK. The plurality of conveyance rollers MKc guide the substrate FS in the plating device MK. In addition, at least 1 of the plurality of conveyance rollers MKc may be a drive roller, and the rest may be driven rollers. By using 1 of the transport rollers MKc as a drive roller, the transport speed of the substrate FS can be changed in the plating device MK.
Further, at least one of the transport rollers MKc disposed in the plating catalyst tank MKa and the transport rollers MKc disposed in the plating tank MKb may be movable in the transport direction of the substrate FS. In this case, the transport roller MKc moves in the transport direction of the substrate FS in the plating catalyst tank MKa or the plating tank MKb, whereby the transport distance of the substrate FS in the plating catalyst tank MKa or the length of the transport distance of the substrate FS in the plating tank MKb can be changed.
The controller CONT has a plating controller 67 for controlling the plating device MK. When any one of the plurality of conveyance rollers MKc is a driving roller, the plating control section 67 can control the rotation speed of the conveyance roller MKc (driving roller), that is, the conveyance speed of the substrate FS in the plating device MK. The change in the conveyance speed of the substrate FS changes the immersion time of the substrate FS in the plating catalyst tank MKa or the immersion time of the substrate FS in the plating tank MKb. In addition, when the transfer roller MKc in the plating catalyst tank MKa or the plating tank MKb is movable in the transfer direction of the substrate FS, the plating control unit 67 can control the position of the movable transfer roller MKc, that is, the transfer distance of the substrate FS in the plating catalyst tank MKa or the plating tank MKb. The change in the transport distance of the substrate FS in the plating catalyst tank MKa or the plating tank MKb changes the immersion time of the substrate FS in the plating catalyst tank MKa or the immersion time of the substrate FS in the plating tank MKb.
Fig. 13 is a flowchart showing an example of an exposure method using the exposure system 400 of the present embodiment. In the example shown in fig. 13, the exposure system 400 performs the processing of step S01 to step S03 as in the above-described embodiment. Thereafter, the control apparatus CONT detects whether or not the exposure area W is determined to be a defective exposure in the determination section 64 (step S04). As a result of the detection in step S04, when the determination unit 64 determines that the exposure is defective (yes in step S04), the conveyance controller 63 controls the plating device MK based on the calculated information on the amount of separation (step S08). In step S08, the plating controller 67 controls the conveyance speed of the substrate FS and the conveyance distance of the substrate FS in the plating device MK by adjusting the rotation speed and position of the conveyance roller MKc, for example, and extends the immersion time of the substrate FS in the plating catalyst tank MKa or the plating tank MKb, for example.
As a result, although the rate of application of the plating catalyst per unit time in the exposure field W determined to be defective exposure decreases, the application of the plating catalyst to the exposure field W can be compensated for by extending the immersion time of the substrate FS in the plating catalyst bath MKa. Alternatively, even when a sufficient plating catalyst is not applied to the exposed areas W, sufficient (sufficient as a wiring pattern) plating can be formed on the exposed areas W by extending the immersion time of the substrate FS in the plating bath MKb.
Fig. 14(a) and 14(B) are diagrams illustrating an example of changing the transport distance of the substrate FS in the plating device MK in the exposure system 400. In the example shown in fig. 14(a), the conveyance roller MKc is disposed so that the length of the conveyance path becomes the shortest in a state where the substrate FS is immersed in the plating catalyst tank MKa or the plating tank MKb. As shown in fig. 14(B), among the plurality of conveyance rollers MKc arranged in the plating catalyst tank MKa or the plating tank MKb, the conveyance roller MKc1 is moved upward from this state, and the substrate FS is moved in a state of meandering in the vertical direction in the plating catalyst tank MKa or the plating tank MKb. That is, the conveyance path of the substrate FS in the plating catalyst tank MKa or the plating tank MKb becomes long, and the immersion time in the plating catalyst tank MKa or the plating tank MKb can be made long.
According to the present embodiment, when the inspection device DT determines that the exposure area W is an underexposure area, the plating device MK is controlled to adjust (extend) the immersion time of the substrate FS in the plating catalyst bath MKa or the plating bath MKb, so that the appropriate plating process can be performed on the exposure area W determined to be an underexposure area W. As a result, a desired wiring pattern is formed in the exposure region W determined to be defective in exposure, thereby suppressing a decrease in the yield of the substrate FS.
< embodiment 5 >
Fig. 15 is a diagram showing an example of an exposure system 500 according to embodiment 5. The exposure system 500 shown in fig. 15 includes an exposure apparatus EX3 and an inspection apparatus DT. In the following description, unless otherwise specified, an XYZ orthogonal coordinate system in which the direction of gravity is the Z direction is set, and the X direction, the Y direction, and the Z direction will be described with reference to the arrows shown in the drawings. The direction indicated by the arrow is referred to as the + direction (for example, the + X direction), and the opposite direction is referred to as the-direction (for example, the-X direction).
The exposure system 500 is, for example, a part of a manufacturing system in which a manufacturing line for manufacturing a flexible display, a flexible sensor, or the like as an electronic device is built. Hereinafter, the electronic device will be described on the premise of a flexible display.
The exposure system 500 has a so-called Roll-To-Roll (Roll To Roll) system in which a substrate FS is fed from a feed-out Roll (see a feed-out Roll RL1 in fig. 1) in which a flexible sheet substrate (sheet substrate) FS is wound up in a Roll, various processes are continuously performed on the fed substrate FS, and then the substrate FS after the various processes is wound up by a take-up Roll (see a take-up Roll RL2 in fig. 1). The substrate FS has a belt-like shape in which the conveyance direction of the substrate FS is a long side direction (long dimension) and the width direction is a short side direction (short dimension). The substrate FS sent from the sending-out roller is subjected to various processes in order of the processing apparatus PR1, the exposure apparatus (the drawing apparatus, the beam scanning apparatus) EX4, the processing apparatus PR2, and the like, and is wound by the winding roller.
The X direction is a direction (transfer direction) from the processing apparatus PR1 to the processing apparatus PR2 through the exposure apparatus EX3 in the horizontal plane. The Y direction is a direction orthogonal to the X direction in the horizontal plane, and is a width direction (short dimension direction) of the substrate FS. The Z direction is a direction (upward direction) orthogonal to the X direction and the Y direction, and is parallel to the direction in which gravity acts.
The processing apparatus PR1 performs pre-process processing on the substrate FS to be subjected to exposure processing by the exposure apparatus EX. The processing apparatus PR1 transfers the substrate FS subjected to the previous process to the exposure apparatus EX. By the treatment in the preceding step, the substrate FS sent to the exposure apparatus EX becomes a substrate having the resist layer R formed on the surface thereof.
In the present embodiment, the exposure apparatus EX3 as a light beam scanning apparatus is a so-called raster scan type exposure apparatus of a direct scan type which does not use a mask. The exposure apparatus EX3 irradiates the irradiated surface (exposure area W) of the substrate FS supplied from the processing apparatus PR1 with a light pattern corresponding to a specific pattern used for display electronics, circuits, wiring, and the like. The exposure apparatus EX3 one-dimensionally scans the exposure light SP of the exposure beam LB on the irradiated surface of the substrate FS in a specific scanning direction (Y direction) while conveying the substrate FS in the + X direction, and modulates (turns on/off) the intensity of the exposure light SP at high speed in accordance with pattern data (drawing data). With this configuration, drawing and exposure of a light pattern corresponding to a specific pattern of an electronic device, a circuit, a wiring, or the like are performed on the irradiated surface of the substrate FS.
That is, the exposure light SP relatively two-dimensionally scans the irradiated surface of the substrate FS by the conveyance of the substrate FS and the scanning of the exposure light SP, and performs the drawing exposure of a specific pattern on the substrate FS. Since the substrate FS is transported in the transport direction (+ X direction), a plurality of exposure areas W are provided at a predetermined interval in the longitudinal direction of the substrate FS by the exposure apparatus EX. Since an electronic device is formed in this exposure region W, the exposure region W is also an electronic device formation region. Since the electronic device is configured by stacking a plurality of pattern layers (layers having patterns), the exposure apparatus EX3 can expose patterns corresponding to the respective layers.
The processing apparatus PR2 performs post-process processing (for example, plating processing, development/etching processing, and the like) on the substrate FS subjected to the exposure processing by the exposure apparatus EX 3. By this post-process treatment, a pattern layer (e.g., wiring pattern layer) of the electronic component is formed on the substrate FS.
Since the electronic device is configured by overlapping a plurality of pattern layers, 1 pattern layer is generated through at least each process of the device manufacturing system including the exposure system 500. Therefore, in order to produce an electronic device, it is necessary to undergo, for example, 2 times the respective processes of the device manufacturing system including the exposure system 500 shown in fig. 15. Therefore, for example, the pattern layer can be laminated by mounting a take-up roll around which the substrate FS is taken up as a delivery roll in another device manufacturing system. Such an operation is repeated to form an electronic device. The processed substrate FS is in a state where a plurality of electronic device forming regions are connected in the longitudinal direction of the substrate FS at a specific interval. That is, the substrate FS becomes a multi-chamfer substrate.
The exposure apparatus EX3 is housed in a temperature-controlled room ECV. The temperature control chamber ECV keeps the inside at a predetermined temperature, thereby suppressing a change in shape of the substrate FS conveyed inside due to the temperature. The temperature-controlled room ECV is disposed on an installation surface E of a manufacturing plant or the like by passive or active vibration-proof units SU1 and SU 2. The vibration isolation units SU1 and SU2 reduce vibration from the installation surface E. The installation surface E may be a floor surface of a factory or a surface on an installation base installed on the floor surface to form a horizontal surface. The exposure apparatus EX3 includes a substrate transfer mechanism 12, a light source device 14, a beam switching member 16, an exposure head 18, a control device 20, and a plurality of alignment microscopes AMm (AM1 to AM 4).
The substrate transfer mechanism 12 transfers the substrate FS transferred by the processing apparatus PR1 at a predetermined speed in the exposure apparatus EX3, and then delivers the substrate FS at a predetermined speed to the processing apparatus PR 2. The substrate transfer mechanism 12 defines a movement path of the substrate FS transferred in the exposure apparatus EX 3. The substrate conveyance mechanism 12 includes an edge position controller EPC, a drive roller R1, a dancer roller RT1, a rotary drum (cylindrical drum) DR, a dancer roller RT2, a drive roller R2, and a drive roller R3 in this order from the upstream side (the-X direction side) in the conveyance direction of the substrate FS.
The substrate transfer mechanism 12 transfers the substrate FS transferred by the processing apparatus PR1 at a predetermined speed in the exposure apparatus EX3, and then delivers the substrate FS at a predetermined speed to the processing apparatus PR 2. The substrate transfer mechanism 12 defines a movement path of the substrate FS transferred in the exposure apparatus EX 3. The substrate conveyance mechanism 12 includes an edge position controller EPC, a drive roller R1, a dancer roller RT1, a rotary drum DR, a dancer roller RT2, a drive roller R2, and a drive roller R3 in this order from the upstream side (the-X direction side) in the conveyance direction of the substrate FS.
The light source device 14 includes a light source (pulse light source) and emits a pulse-shaped light beam (pulse light, laser light) LB. The light beam LB is, for example, ultraviolet light having a peak wavelength in a wavelength band of 370nm or less, and the oscillation frequency (light emission frequency) of the light beam LB is Fs. The light beam LB emitted from the light source device 14 is incident on the exposure head 18 via the beam switching section 16. The light source device 14 emits the light beam LB at the oscillation frequency Fs and emits the light beam LB under the control of the control device 20. The light source device 14 is configured by, for example, a semiconductor laser element that generates pulsed light in an infrared wavelength range, an optical fiber amplifier, a wavelength conversion element (harmonic generation element) that converts the amplified pulsed light in the infrared wavelength range into pulsed light in an ultraviolet wavelength range, and the like, and uses an optical fiber amplifier laser source that can obtain high-brightness ultraviolet pulsed light with an oscillation frequency Fs of several hundreds MHz and an emission time of 1 pulsed light of picoseconds.
The light flux switching member 16 switches the optical path of the light flux LB so that the light flux LB from the light source device 14 is incident on one of the plurality of scanning units Un (U1 to U6) constituting the exposure head 18, which performs one-dimensional scanning of the exposure light SP.
The exposure head 18 includes a plurality of scanning units Un (U1 to U6) to which light beams LB are incident, respectively. The exposure head 18 draws a pattern on a part of the substrate FS supported by the circumferential surface of the rotary drum DR by a plurality of scanning units Un (U1 to U6). The exposure head 18 is a multi-beam type exposure head in which a plurality of scanning units Un (U1 to U6) having the same configuration are arranged. Since the exposure head 18 repeats pattern exposure for the electronic component with respect to the substrate FS, a plurality of exposure areas W (electronic component forming areas) for performing the pattern exposure are provided at predetermined intervals along the longitudinal direction of the substrate FS. The odd-numbered scanning units U1, U3, and U5 are disposed on the upstream side (the (-X direction side) in the conveyance direction of the substrate FS with respect to the center plane Poc and are disposed along the Y direction. The even-numbered scan units U2, U4, U6 are disposed on the downstream side (+ X direction side) of the conveyance direction of the substrate FS with respect to the center plane Poc, and are disposed along the Y direction. The odd-numbered scan cells U1, U3, U5 and the even-numbered scan cells U2, U4, U6 are symmetrically disposed with respect to the central plane Poc.
The scanning unit Un performs one-dimensional scanning of the exposure light SP on the irradiated surface of the substrate FS by a rotating polygon mirror along predetermined linear drawing lines (scanning lines) SLn (SL1 to SL6) while projecting the light beam LB from the light source device 14 on the irradiated surface of the substrate FS so as to be condensed into the exposure light SP. The inspection device DT is disposed downstream of the scanner unit Un. The inspection device DT measures information on the amount of release of the photosensitive protecting group in the exposure area W of the substrate FS moving along the outer peripheral surface of the rotating drum DR at each measurement point. The measurement result obtained by the inspection device DT is sent to the control device 20.
According to the present embodiment, even when the substrate FS moves along the rotary drum DR, the inspection device DT can acquire information on the amount of release of the photosensitive protecting group in the exposure region W. The inspection device DT is not limited to being disposed so as to face the substrate FS moved by the rotating drum DR. For example, the inspection device DT may be disposed to face the substrate FS moving on the downstream side of the rotating drum DR.
< embodiment 6 >
Fig. 16 is a diagram showing an example of exposure apparatus EX4 according to embodiment 6. In the present embodiment, the same components as those in the above embodiments are denoted by the same reference numerals, and the description thereof will be omitted or simplified. As shown in fig. 16, the exposure system 600 includes an exposure apparatus EX 4. Unlike the above-described embodiment, the exposure apparatus EX4 includes an inspection apparatus DT.
The inspection apparatus DT is provided downstream of the exposure apparatus EX4 in the conveyance direction of the substrate FS with respect to the portion irradiated with the exposure light SP. The exposure device EX4 performs exposure of the exposure region W with the exposure light SP, and acquires information on the amount of release of the photosensitive protecting group in the exposure region W with the inspection device DT. That is, after the exposure of the exposure region W by the exposure light SP, information on the release amount of the photosensitive protecting group in the exposure region W can be immediately acquired.
The information on the amount of release of the photosensitive protecting group acquired by the inspection apparatus DT is sent to a control apparatus not shown provided in the exposure apparatus EX4 or a control apparatus not shown provided outside the exposure apparatus EX 4. The control device may include the above-described determination unit 64. When the determination unit 64 determines that the exposure area W is an exposure defect, the control device may control the exposure conditions (for example, the intensity of the exposure light SP, the moving speed of the substrate FS, and the like) in the exposure apparatus EX 4.
According to the present embodiment, since the information on the amount of release of the photosensitive protecting group is acquired by the inspection apparatus DT included in the exposure apparatus EX4, it is not necessary to dispose the inspection apparatus DT outside the exposure apparatus EX 4. As a result, the length of the substrate FS in the transport direction (i.e., the length of the manufacturing line of the electronic component on the substrate FS) can be shortened. The measurement result of the inspection apparatus DT included in the exposure apparatus EX4 can be used as information for controlling apparatuses other than the exposure apparatus EX4 (for example, other exposure apparatuses disposed on the upstream side and the downstream side of the exposure apparatus EX4, the processing apparatuses PR1, PR2, and the like).
The embodiments of the present invention have been described above, but the technical scope of the present invention is not limited to the embodiments described above or the modifications and the like. One or more of the elements described in the above embodiments and the like may be omitted. Further, the elements described in the above embodiments and the like may be combined as appropriate. In addition, the disclosure of international application PCT/JP2019/011101 and of all the documents cited in the present description are cited as part of the description herein, insofar as the statutory permits.
Description of the symbols
CONT. control device CT. coating device DT, DTa-DTc. inspection device EX, EXA-EXc, EX 3. Exposure device EX 1. first exposure device EX 2. second exposure device FS. substrate MK. plating device MKa. plating catalyst bath Mkb. plating bath N. non-exposure area TR. transport device W. exposure area Wa. unit area 61. exposure control section 62. first exposure control section 66. second exposure control section 67. control section 100, 200, 400, 500. transport control section 64. exposure control section 65. first exposure control section 67. second exposure control section 100, 200. control device CT. inspection device EX, EXa-EXc, EX 3. second exposure device EX 1. second exposure device EX 2. second exposure device FS. substrate MK. plating device
Claims (32)
1. An exposure system for exposing a layer containing a photosensitive protecting group on a substrate to form a lyophilic/lyophobic pattern containing a lyophilic region and a lyophobic region in the layer, the exposure system comprising:
an exposure device that exposes the layer;
an inspection device that inspects a region exposed by the exposure device in a non-contact manner; and
and a control device that controls one or more devices among the devices included in the exposure system based on a result of the inspection by the inspection device.
2. The exposure system according to claim 1, wherein the region is a region in which a surface state is changed by the exposure.
3. The exposure system according to claim 1 or claim 2, wherein the inspection device inspects any one or more of a film thickness, a mass, an atomic force, or absorption of a specific wavelength of the region.
4. An exposure system for forming a lyophilic/lyophobic pattern including a lyophilic region and a lyophobic region by exposing a layer including a compound having a photosensitive protecting group formed on a substrate, the exposure system comprising:
an exposure device that exposes the layer containing the compound having a photosensitive protecting group;
an inspection device that acquires information on a release amount of the photosensitive protecting group in a region exposed by the exposure device at each measurement point; and
and a control device having a determination unit that determines whether or not the exposure is good based on the information of the measurement points included in the region exposed by the exposure device.
5. The exposure system according to claim 4, wherein the determination section determines whether the exposure is good or not based on the information per unit area.
6. The exposure system according to claim 4 or claim 5, wherein the control device controls the exposure device based on the information in a case where the determination section determines that the exposure is defective.
7. The exposure system according to claim 6, wherein the control of the exposure device by the control device includes at least one of changing an intensity of exposure light at the time of exposure by the exposure device, changing a focal position of the exposure light, changing an irradiation time of the exposure light, and changing an overlap amount of the exposure light.
8. The exposure system according to any one of claims 4 to 7, wherein a transfer device is provided that transfers the substrate including exposure by the exposure device.
9. The exposure system according to claim 8, wherein the inspection device is disposed on a downstream side of the exposure device in a conveyance direction of the substrate by the conveyance device.
10. The exposure system according to claim 8 or 9, wherein the control device controls a conveyance speed of the substrate by the conveyance device based on the information in a case where the determination section determines that the exposure failure occurs.
11. The exposure system according to any one of claims 8 to 10, wherein a 2 nd exposure device is provided downstream of the inspection device in a conveyance direction of the substrate by the conveyance device.
12. The exposure system according to claim 11, wherein the control device re-exposes the layer with the 2 nd exposure device based on the information in a case where the determination section determines that the exposure is defective.
13. The exposure system according to any one of claims 5 to 12, wherein a plating device that performs plating treatment on the substrate on which the lyophilic/lyophobic pattern is formed is provided on a downstream side of the inspection device in a conveyance direction of the substrate by the conveyance device.
14. The exposure system according to claim 13, wherein the control device controls the plating device based on the information in a case where the determination section determines that the exposure failure occurs.
15. The exposure system of claim 14, comprising: when the determination unit determines that the exposure failure has occurred, the control device changes the immersion time of the layer in at least one of the plating catalyst bath and the plating bath in the plating device based on the information.
16. The exposure system according to any one of claims 4 to 15, wherein the inspection device acquires the information by absorbance in a region exposed by the exposure device.
17. The exposure system according to claim 16, wherein the inspection device is an ultraviolet-visible spectrophotometer, and the information is acquired from a change in absorbance of a specific ultraviolet light in an area exposed by the exposure device.
18. The exposure system according to claim 16, wherein the inspection device is an infrared spectrophotometer, and the information is acquired by a change in absorption of specific infrared light from the functional group in an area exposed by the exposure device.
19. The exposure system according to any one of claims 4 to 15, wherein the inspection device acquires the information by adhesion in an area exposed by the exposure device.
20. The exposure system according to claim 19, wherein the inspection device is an atomic force microscope, and the information is acquired by a change in adhesion of the cantilever in a region exposed by the exposure device.
21. The exposure system according to any one of claims 4 to 15, wherein the inspection device acquires the information from a film thickness in a region exposed by the exposure device.
22. The exposure system according to claim 21, wherein the inspection device is an atomic force microscope or a probe profiler, and the information is acquired from a film thickness variation acquired by contacting a cantilever or a stylus with an area exposed by the exposure device.
23. The exposure system according to claim 21, wherein the inspection device is an optical inspection device, and the information is acquired by a change in film thickness acquired by irradiating a region exposed by the exposure device with light of a specific wavelength.
24. The exposure system according to any one of claims 4 to 15, wherein the inspection device acquires the information by secondary electrons or reflected electrons in a region exposed by the exposure device.
25. The exposure system according to claim 24, wherein the inspection device is a scanning electron microscope, and the information is acquired by a change in secondary electrons or reflected electrons generated by irradiating an area exposed by the exposure device with an electron ray.
26. The exposure system according to any one of claims 4 to 15, wherein the inspection device acquires the information by a contact angle or a surface tension in a region exposed by the exposure device.
27. The exposure system according to claim 26, wherein the inspection device is a contact angle measuring device, a specific droplet is supplied to a region exposed by the exposure device, and the information is acquired from a change in the shape of the droplet.
28. The exposure system according to any one of claims 4 to 15, wherein the inspection device acquires the information by a molecular structure in a region exposed by the exposure device.
29. The exposure system according to claim 28, wherein the inspection device is a mass spectrometer, and the information is acquired from a change in mass detection intensity of the photosensitive protecting group in a region exposed by the exposure device.
30. The exposure system according to claim 28, wherein the inspection device is an X-ray photoelectron spectrometer, and the information is acquired from a change in detected intensity of a specific element from the photosensitive protecting group in a region exposed by the exposure device.
31. An exposure apparatus for exposing a layer containing a compound having a photosensitive protecting group formed on a substrate to light and forming a lyophilic/lyophobic pattern containing a lyophilic region and a lyophobic region, the exposure apparatus comprising:
an exposure section that exposes the layer containing the compound having a photosensitive protecting group;
an inspection section that acquires information on a release amount of the photosensitive protecting group in a region exposed by the exposure section at each measurement point; and
and a control unit having a determination unit configured to determine whether or not the exposure is satisfactory based on the information on the measurement points included in the region exposed by the exposure unit.
32. An exposure method for forming a lyophilic/lyophobic pattern including a lyophilic region and a lyophobic region by exposing a layer including a compound having a photosensitive protecting group formed on a substrate, the exposure method comprising:
exposing the layer containing the compound having a photosensitive protecting group;
acquiring information on the amount of release of the photosensitive protecting group in the exposed region at each measurement point; and
determining whether the exposure is good or not based on the information of the measurement points included in the exposed region.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2019/011101 WO2020188681A1 (en) | 2019-03-18 | 2019-03-18 | Exposure system, exposure device, and exposure method |
| JPPCT/JP2019/011101 | 2019-03-18 | ||
| PCT/JP2020/012066 WO2020189729A1 (en) | 2019-03-18 | 2020-03-18 | Exposure system, exposure device, and exposure method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113574459A true CN113574459A (en) | 2021-10-29 |
| CN113574459B CN113574459B (en) | 2023-10-03 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202080021585.9A Active CN113574459B (en) | 2019-03-18 | 2020-03-18 | Exposure system, exposure apparatus, and exposure method |
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| Country | Link |
|---|---|
| JP (1) | JP7310879B2 (en) |
| KR (1) | KR20210129171A (en) |
| CN (1) | CN113574459B (en) |
| TW (1) | TWI810444B (en) |
| WO (2) | WO2020188681A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114563312A (en) * | 2022-01-27 | 2022-05-31 | 苏州大学 | Method and device for measuring mechanical property of film |
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| JP2017090517A (en) * | 2015-11-02 | 2017-05-25 | 株式会社ニコン | Cylindrical mask, exposure equipment and device manufacturing method |
| JP2017166003A (en) * | 2016-03-14 | 2017-09-21 | オーエム産業株式会社 | Production of plated article |
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| WO2018225549A1 (en) * | 2017-06-05 | 2018-12-13 | セントラル硝子株式会社 | Fluorine-containing monomer, fluorine-containing polymer, pattern forming composition using same, and pattern forming method of same |
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| JPH09257457A (en) * | 1996-03-18 | 1997-10-03 | Matsushita Electron Corp | Measuring method for shape of pattern and measuring method for position of pattern |
| JP4997765B2 (en) | 2003-12-04 | 2012-08-08 | 旭硝子株式会社 | Fluorine-containing compound, water-repellent composition and thin film |
| JP5326335B2 (en) * | 2007-04-18 | 2013-10-30 | ダイキン工業株式会社 | Liquid repellent resist composition |
| JP6118761B2 (en) * | 2014-06-05 | 2017-04-19 | 富士フイルム株式会社 | Test substance measuring kit and test substance measuring method |
| WO2018008610A1 (en) * | 2016-07-08 | 2018-01-11 | 旭硝子株式会社 | Photosensitive composition, method for producing polymer, method for producing photosensitive composition, and method for producing laminate |
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2019
- 2019-03-18 WO PCT/JP2019/011101 patent/WO2020188681A1/en active Application Filing
-
2020
- 2020-03-18 CN CN202080021585.9A patent/CN113574459B/en active Active
- 2020-03-18 KR KR1020217030345A patent/KR20210129171A/en not_active Application Discontinuation
- 2020-03-18 WO PCT/JP2020/012066 patent/WO2020189729A1/en active Application Filing
- 2020-03-18 TW TW109109005A patent/TWI810444B/en active
- 2020-03-18 JP JP2021507402A patent/JP7310879B2/en active Active
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| US20120214094A1 (en) * | 2011-02-23 | 2012-08-23 | Satoshi Mikoshiba | Method of forming pattern |
| JP2012174984A (en) * | 2011-02-23 | 2012-09-10 | Toshiba Corp | Patterning method |
| CN108040500A (en) * | 2015-09-29 | 2018-05-15 | 株式会社尼康 | Manufacture system |
| JP2017090517A (en) * | 2015-11-02 | 2017-05-25 | 株式会社ニコン | Cylindrical mask, exposure equipment and device manufacturing method |
| JP2017166003A (en) * | 2016-03-14 | 2017-09-21 | オーエム産業株式会社 | Production of plated article |
| WO2018225549A1 (en) * | 2017-06-05 | 2018-12-13 | セントラル硝子株式会社 | Fluorine-containing monomer, fluorine-containing polymer, pattern forming composition using same, and pattern forming method of same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114563312A (en) * | 2022-01-27 | 2022-05-31 | 苏州大学 | Method and device for measuring mechanical property of film |
| CN114563312B (en) * | 2022-01-27 | 2022-12-06 | 苏州大学 | Method and device for measuring mechanical property of thin film |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20210129171A (en) | 2021-10-27 |
| CN113574459B (en) | 2023-10-03 |
| JP7310879B2 (en) | 2023-07-19 |
| TWI810444B (en) | 2023-08-01 |
| TW202101130A (en) | 2021-01-01 |
| JPWO2020189729A1 (en) | 2020-09-24 |
| WO2020188681A1 (en) | 2020-09-24 |
| WO2020189729A1 (en) | 2020-09-24 |
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