CN113572437B - GaAs self-bias low-noise amplifier with direct connection selection structure - Google Patents
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- CN113572437B CN113572437B CN202110861327.8A CN202110861327A CN113572437B CN 113572437 B CN113572437 B CN 113572437B CN 202110861327 A CN202110861327 A CN 202110861327A CN 113572437 B CN113572437 B CN 113572437B
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- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 9
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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Abstract
The invention discloses a GaAs self-bias low-noise amplifier with a through selection structure, which is applied to the technical field of electronic communication and aims at solving the problems that the input signal of the existing amplifier circuit is compressed when the amplitude is larger, so that the nonlinear effect is introduced and the signal integrity is influenced. The circuit adopts a self-biasing structure and controls the selection of amplification/direct connection by a single voltage, the scheme solves the problem of reconstruction of the amplifier and the direct connection in a radio frequency front-end system, reduces the power supply ports of the circuit, improves the integration level, and realizes the positive slope gain by selecting an interstage matching mode, so that the circuit is more suitable for most of system applications with higher requirements on gain flatness.
Description
Technical Field
The invention belongs to the technical field of electronic communication, and particularly relates to a GaAs self-bias low-noise amplifier circuit.
Background
A Low Noise Amplifier (LNA) is an indispensable circuit element of a radio frequency front end. In a receiving system, it mainly affects the noise figure of the receiver and directly affects the overall sensitivity. With the continuous improvement of the process in recent years, the system integration level is improved, so that the requirement of multi-functionalization of the circuit is more and more strict.
In a multifunctional transceiver system, a low noise amplifier is located in the first stage of the receiver to boost gain and reduce additional noise introduction, which often requires a larger gain and a smaller noise figure for the amplifier. However, under the condition that the gain of the amplifier is too large and the output saturation power is not changed, the input saturation power is necessarily low, which means that the input signal is compressed when the amplitude is large, thereby introducing a nonlinear effect and affecting the signal integrity.
Disclosure of Invention
In order to solve the technical problems, the invention provides a GaAs self-biased low-noise amplifier with a through selection structure, which adopts the through selection structure, when the power of an input signal is low, a circuit can be amplified through the low-noise amplifier, and when the power is high, low-attenuation transmission can be performed through a through path.
The technical scheme adopted by the invention is as follows: a GaAs self-biased low noise amplifier with a pass-through select structure, comprising: two-stage low noise amplifier with switch switching function, and through path with switch switching function、VcontrolAnd VDD(ii) a The input ends of the two-stage low-noise amplifier with switch switching function and the through channel with switch switching function are respectively connected with the input end of the whole circuit, the output ends of the two-stage low-noise amplifier with switch switching function and the through channel with switch switching function are respectively connected with the output end of the whole circuit, VcontrolAnd VDDThe power supply circuit is used for supplying power to the two-stage low noise amplifier with the switch switching function and the through path with the switch switching function;
when V iscontrolWhen V is equal to 0V, the two-stage low noise amplifier with switch switching function is cut off, the through path with switch switching function is started, and when V is equal to 0V, the two-stage low noise amplifier with switch switching function is startedcontrol＝VDDWhen the amplifier is started, the two-stage low-noise amplifier with the switch switching function is started, and the through passage with the switch switching function is cut off.
The two-stage low noise amplifier with the switch switching function comprises a first stage and a second stage which are connected in series in sequence: the circuit comprises an input switch network, an input matching network, a first-stage amplifier, an inter-stage matching network, a second-stage amplifier, an output matching network and an output switch network.
The first-stage amplifier and the second-stage amplifier have the same structure and both comprise: the circuit comprises an RC feedback network, an amplifying unit, a current mirror circuit, a bypass filtering unit and a power supply control unit;
the amplifying unit of the first-stage amplifier is a transistor M1The RC feedback network of the first stage amplifier comprises a resistor R connected in series1And a capacitor C5Two ends of RC feedback network of the first stage amplifier are respectively connected with the transistor M1The drain electrode is connected with the grid electrode; the current mirror circuit of the first stage amplifier is used as a transistor M1Providing a DC bias voltage, one terminal of the current mirror circuit and the transistor M1The grid links to each other, and the other end is established ties and is linked to each other with the power control unit behind the bypass filter unit, the power control unit includes: transistor M7Inductor L3Transistor M7Source electrode of (1) through inductor L3Transistor M1Of the drain electrode of transistor M7Drain electrode of the transistor is connected with a power supply VDDCrystal ofPipe M7Is connected to Vcontrol；
The amplifying unit of the second-stage amplifier is a transistor M2The RC feedback network of the second stage amplifier comprises a resistor R connected in series2And a capacitor C7Two ends of RC feedback network of the second stage amplifier are respectively connected with the transistor M2The drain electrode is connected with the grid electrode; the current mirror circuit of the second stage amplifier is used as the transistor M2Providing a DC bias voltage, one terminal of the current mirror circuit and the transistor M2The grid links to each other, and the other end is established ties and is linked to each other with the power control unit behind the bypass filter unit, the power control unit includes: transistor M9Inductor L8Transistor M9Source electrode of (1) through inductor L8Transistor M2Of the drain electrode of transistor M9Drain electrode of the transistor is connected with a power supply VDDTransistor M9Is connected to Vcontrol。
The transistor M3Transistor M4Transistor M5Transistor M6Transistor M7Transistor M8Transistor M9Transistor M10The respective gate further comprises a resistor having a resistance greater than 20K omega connected in series.
The through path with the switch switching function comprises: capacitor C2Transistor M4Transistor M5Capacitor C12Long microstrip line and capacitor C13Transistor M14Transistor M13Capacitor C11And an inverter;
the inverter includes: transistor M11Transistor M12(ii) a Transistor M11And the transistor M12Is connected to the drain of the transistor M11Gate of and transistor M11Is connected to the drain of the transistor M11Source electrode of the transistor is connected with a power supply VDDTransistor M12Grid of is connected with VcontrolTransistor M12The source of (2) is grounded;
capacitor C2A first terminal as the input terminal of a through path with a switch switching function, a capacitor C2A second terminal connected to the source of transistor M4, transistor M4Is connected with a transistor M13Of the transistor M4Drain electrode of (2) is connected with the transistor M13Of the drain electrode of transistor M4Is also connected with the transistor M5Of the drain electrode of transistor M5Source electrode of (1) through a capacitor C12Grounded, transistor M5Grid of is connected with Vcontrol；
Transistor M13Is also connected with the transistor M14Of the drain electrode of transistor M14Source electrode of (1) through a capacitor C13Grounded, transistor M14Grid of is connected with VcontrolTransistor M14The drain electrode of the capacitor is also connected with a power supply VDDTransistor M13Source electrode of the capacitor C11First terminal of (1), capacitor C11The second terminal of the first switch is used as the output terminal of the through path with the switch switching function;
the transistor M13The grid of the transistor is also connected with a transistor M11Of the substrate.
The transistor M11Is a D-mode digital tube.
The transistor M12Is an E-mode digital tube.
The transistor M12Transistor M13Transistor M14The respective gate further comprises a resistor having a resistance greater than 20K omega connected in series.
The invention has the beneficial effects that: the invention improves the traditional low noise amplifier, and the amplifier can select between the amplifier and the direct connection by using a structure with direct connection selection, so that the circuit can amplify through the low noise amplifier when the input signal power is small, and can select to transmit through the direct connection path with low attenuation when the power is large; meanwhile, when the direct connection is selected, the amplifier is powered off by using the power management structure so as to ensure low power consumption and stable circuit; the circuit adopts a self-biasing structure and controls the selection of amplification/direct connection by a single voltage, the scheme solves the problem of reconstruction of the amplifier and the direct connection in a radio frequency front-end system, reduces the power supply ports of the circuit, improves the integration level, and realizes the positive slope gain by selecting an interstage matching mode, so that the circuit is more suitable for most of system applications with higher requirements on gain flatness.
Drawings
FIG. 1 is a schematic diagram of a GaAs self-biased low noise amplifier chip with a pass-through select structure;
FIG. 2 is a graph of S parameter test results for the pass-through state of the present invention;
FIG. 3 is a graph of the S parameter test results for the enlarged state of the present invention;
FIG. 4 is a graph of the noise figure test results for the amplified state of the present invention;
FIG. 5 is a graph of the OP-1dB test results of the amplified state of the present invention;
FIG. 6 is a graph showing the results of the third-order intermodulation test in the amplified state of the present invention.
Detailed Description
In order to facilitate the understanding of the technical contents of the present invention by those skilled in the art, the present invention will be further explained with reference to the accompanying drawings.
Fig. 1 shows a GaAs self-biased gain low-noise positive slope amplifier circuit with a pass-through selection structure according to the present invention, which mainly includes a pass-through with a switch switching function and a two-stage low-noise amplifier with a switch switching function. The input ends of the two structures are connected to the input end of the whole circuit, and the output end of the two structures is connected to the output end of the whole circuit.
The through path with the switch switching function is controlled to be logic low (V) when the control voltage iscontrol0V) when the control voltage is logic high (V)control3V or 5V) provides isolation characteristics. The circuit comprises an input blocking capacitor C2Input series switch tube M4Input parallel switch tube M5Input to a ground shunt capacitor C12A long Microstrip Line Microstrip-Line, a parallel capacitor C connected to ground13Output parallel switch tube M14Output series switch tube M13Output dc blocking capacitor C11. The grids of all the switching tubes are respectively connected with a large resistor RgInverter composed of M11、M12Composition of, wherein M11Is a D-mode digital tube, M12Is an E-mode digital tube, M12Is connected with a large resistor Rg。
Large resistance R in the inventiongIs mainly applied to the gate of the transistor (e.g. M)3Gate of) and circuits with capacitive dc blocking (e.g., M)3Drain electrode of (b) providing a dc bias voltage while isolating rf signals, the main feature being that the bias voltage is currentless, R in practical applicationgIs typically greater than 2K omega.
The connection of the through vias is as follows:
the input port is connected with an input blocking capacitor C2One end of (A), C2Is connected to the input series switching tube M at the other end4Drain electrode of, M4Is connected to the input parallel switch tube M5The drain electrode of the switch is connected to one end of a long Microstrip Line Microstrip-Line and is input into a parallel switch tube M5Is connected to the input to ground parallel capacitor C12One end of (A), C12And the other end of the same is grounded. The other end of the Microstrip-Line is connected to an output series switch tube M13The drain of the switch is connected to the output parallel switch tube M14Drain electrode of, M14Is connected to the output to ground parallel capacitor C13One end of (A), C13Is grounded at the other end, M13Is connected to the output dc blocking capacitance C11One end of (A), C11And the other end thereof is connected to the output port.
Inverter composed of a digital tube M11And M12Composition of M11Is connected to a supply voltage VDD，M11Is connected to M11Is connected to M, and is connected to M12And as the output of the inverter, M12The source of (1) is grounded, and the gate passes through a large resistor RgIs connected to a control voltage Vcontrol。M4And M13Is passed through a large resistor RgConnected to the output of the inverter, M5And M14Is passed through a large resistor RgConnected to a control voltage Vcontrol。
The low noise amplifier is connected as follows:
C1、M3and C3Forming an input switching network of the amplifier, wherein M3Is passed through a large resistor RgIs connected to Vcontrol，M3Through the drain electrode of RgIs connected to VDDTo provide a DC bias voltage, C1And C3Is a dc blocking capacitor. L is1And L2Forming an input matching network to achieve input impedance matching, C5And R1Forming an RC feedback network of the first stage amplifier and being connected with M1Is connected to the gate to provide negative feedback, ensuring stability, M1Source connecting inductor L4Ensuring that the circuit can simultaneously realize conjugate matching and noise matching. R3、M6And a large resistance RgA current mirror circuit is configured to provide a bias. C14、C15、C16The filter capacitor is bypassed. M7For power supply control switch, source and drain are respectively connected to inductor L3And a power supply VDDThe grid passes through a large resistor RgIs connected to Vcontrol。C6、L9、L5And C20An interstage matching network is formed to ensure gain compensation, so that high-frequency gain is high and low-frequency gain is low. C7And R2Forming an RC feedback network of the first stage amplifier and being connected with M2Is connected to the gate to provide negative feedback, ensuring stability, M2Source electrode inductance L6Ensuring that the circuit can simultaneously realize conjugate matching and noise matching. R4、M8And a large resistance RgA current mirror circuit is configured to provide a bias. C17、C18、C19The filter capacitor is bypassed. M9For power supply control switch, source and drain are respectively connected to inductor L8And a power supply VDDThe grid passes through a large resistor RgIs connected to Vcontrol。C8And L7Form an output matching network, C9、M10And C10Forming an input switching network of the amplifier, wherein M10Is passed through a large resistor RgIs connected to Vcontrol，M10Source electrode ofBy RgIs connected to VDDTo provide a DC bias voltage, C9And C10Is a dc blocking capacitor.
The amplifier has two working states, namely a direct-connection state and a low-noise amplification state:
when V iscontrolWhen the voltage is equal to 0V, the circuit is in a through state, and M is in the through state7And M9Since the gate voltage is 0V, the switch is turned off, all amplifier supply circuits are turned off, and the amplification path is cut off. Transistor M3And M10The gate of which is also 0V, the switch opens further closing the amplification path. For through vias, M4And M13The gate of which obtains V through the output of the inverterDDPotential is turned on, M5And M14Is connected to VcontrolAnd set 0V to be closed, the circuit can realize a through state through the microstrip line.
When V iscontrol＝VDD(typically 5V) the circuit is in a low noise amplification state, when M is present7And M9Since the gate voltage is 5V, the switch is turned on, all amplifier supply circuits are turned on, and the amplification path is enabled. Transistor M3And M10The gate of which is also 5V, the switch turns on the amplification path. The amplifier is gate biased by a mirror current source, avoiding the use of extra voltage. For through vias, M4And M13M is turned off by the output of the inverter obtaining a potential of 0V5And M14Is connected to VcontrolAnd 5V is set to be conducted, so that the through loop is further cut off, and the amplifier is ensured to work in an amplifying state.
Figures 2-6 show some parameter indicators for the amplifier of the invention, including: gain, noise, power, etc.; wherein, fig. 2 shows the normal operation and insertion loss of the amplifier in the through state of the invention, fig. 3 shows the low noise amplification state and insertion loss of the amplifier in the invention, and the interstage matching mode of the invention realizes the positive slope gain as shown in fig. 3, so that the amplifier circuit of the invention is more suitable for most of the system applications with higher requirements on gain flatness; FIG. 4 shows that the amplifier input of the present invention achieves low noise matching; fig. 5 shows the power characteristics of the amplifier of the present invention; fig. 6 shows the non-linear variation characteristic of the amplifier of the present invention at the time of two-tone input.
It will be appreciated by those of ordinary skill in the art that the embodiments described herein are intended to assist the reader in understanding the principles of the invention and are to be construed as being without limitation to such specifically recited embodiments and examples. Various modifications and alterations to this invention will become apparent to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the claims of the present invention.
Claims (7)
1. A GaAs self-biased low noise amplifier with a pass-through select structure, comprising: two-stage low noise amplifier with switch switching function, through path with switch switching function, and VcontrolAnd VDD(ii) a The input ends of the two-stage low-noise amplifier with switch switching function and the through channel with switch switching function are respectively connected with the input end of the whole circuit, the output ends of the two-stage low-noise amplifier with switch switching function and the through channel with switch switching function are respectively connected with the output end of the whole circuit, VcontrolAnd VDDThe power supply circuit is used for supplying power to the two-stage low noise amplifier with the switch switching function and the through path with the switch switching function;
when V iscontrolWhen the voltage is not less than 0V, the two-stage low noise amplifier with the switch switching function is turned off, the through path with the switch switching function is started, and when the voltage is Vcontrol=VDDWhen the direct current is detected, the two-stage low-noise amplifier with the switch switching function is started, and the direct current with the switch switching function is cut off;
the two-stage low noise amplifier with the switch switching function specifically comprises a first-stage amplifier and a second-stage amplifier;
the first-stage amplifier and the second-stage amplifier have the same structure and both comprise: the circuit comprises an RC feedback network, an amplifying unit, a current mirror circuit, a bypass filtering unit and a power supply control unit;
the amplifying unit of the first-stage amplifier is a transistor M1The RC feedback network of the first stage amplifier comprises a resistor R connected in series1And a capacitor C5Two ends of RC feedback network of the first stage amplifier are respectively connected with the transistor M1The drain electrode is connected with the grid electrode; the current mirror circuit of the first stage amplifier is used as a transistor M1Providing a DC bias voltage, one terminal of the current mirror circuit and the transistor M1The grid links to each other, and the other end links to each other with the power control unit of first-stage amplifier after establishing ties the bypass filter unit of first-stage amplifier, the power control unit of first-stage amplifier includes: transistor M7Inductor L3Transistor M7Source electrode of (1) through inductor L3Transistor M1Of the drain electrode of transistor M7Drain electrode of the transistor is connected with a power supply VDDTransistor M7Is connected to Vcontrol；
The amplifying unit of the second-stage amplifier is a transistor M2The RC feedback network of the second stage amplifier comprises a resistor R connected in series2And a capacitor C7Two ends of RC feedback network of the second stage amplifier are respectively connected with the transistor M2The drain electrode is connected with the grid electrode; the current mirror circuit of the second stage amplifier is used as the transistor M2Providing a DC bias voltage, one terminal of the current mirror circuit and the transistor M2The grid links to each other, and the other end links to each other with the power control unit of second amplifier after establishing ties the bypass filter unit of second amplifier, the power control unit of second amplifier includes: transistor M9Inductor L8Transistor M9Source electrode of (1) through inductor L8Transistor M2Of the drain electrode of transistor M9Drain electrode of the transistor is connected with a power supply VDDTransistor M9Is connected to Vcontrol。
2. The GaAs self-biased low noise amplifier with shoot-through selection structure of claim 1, wherein said two-stage low noise amplifier with switch switching function comprises in series: the circuit comprises an input switch network, an input matching network, a first-stage amplifier, an interstage matching network, a second-stage amplifier, an output matching network and an output switch network; the input switch network is connected with the input port of the whole circuit, and the output switch network is connected with the output port of the whole circuit.
3. The GaAs self-biased low noise amplifier with a through selection structure of claim 2, wherein said through path with switch switching function comprises: capacitor C2Transistor M4Transistor M5Capacitor C12Long microstrip line and capacitor C13Transistor M14Transistor M13Capacitor C11And an inverter;
the inverter includes: transistor M11Transistor M12(ii) a Transistor M11And the transistor M12Is connected to the drain of the transistor M11Gate of and transistor M11Is connected to the drain of the transistor M11Source electrode of the transistor is connected with a power supply VDDTransistor M12Grid of is connected with VcontrolTransistor M12The source of (2) is grounded;
capacitor C2A first terminal as the input terminal of a through path with a switch switching function, a capacitor C2Second terminal transistor M4Source of (1), transistor M4Is connected with a transistor M13Of the transistor M4Is connected to the transistor M by a long microstrip line13Of the drain electrode of transistor M4Is also connected with the transistor M5Of the drain electrode of transistor M5Source electrode of (1) through a capacitor C12Grounded, transistor M5Grid of is connected with Vcontrol；
Transistor M13Is also connected with the transistor M14Of the drain electrode of transistor M14Source electrode of (1) through a capacitor C13Grounded, transistor M14Grid of is connected with VcontrolTransistor M14The drain electrode of the capacitor is also connected with a power supply VDDTransistor M13Source electrode of the capacitorC11First terminal of (1), capacitor C11The second terminal of the first switch is used as the output terminal of the through path with the switch switching function;
the transistor M13The grid of the transistor is also connected with a transistor M11Of the substrate.
4. GaAs self-biased low noise amplifier with shoot-through selection structure according to claim 3, wherein said transistor M is4Transistor M5Transistor M7Transistor M9The respective gate further comprises a resistor having a resistance greater than 20K omega connected in series.
5. GaAs self-biased low noise amplifier with shoot-through selection structure according to claim 4, wherein said transistor M is12Transistor M13Transistor M14The respective gate further comprises a resistor having a resistance greater than 20K omega connected in series.
6. GaAs self-biased low noise amplifier with shoot-through selection structure according to claim 3, wherein said transistor M is11Is a D-mode digital tube.
7. GaAs self-biased low noise amplifier with shoot-through selection structure according to claim 3, wherein said transistor M is12Is an E-mode digital tube.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0964511A1 (en) * | 1998-06-11 | 1999-12-15 | Ace Technology | Low-noise amplifier |
| US6240279B1 (en) * | 1998-03-20 | 2001-05-29 | Kabushiki Kaisha Toshiba | Transmission power control apparatus and a radio communication apparatus including the transmission power control apparatus |
| CN111510089A (en) * | 2020-04-30 | 2020-08-07 | 中国电子科技集团公司第二十四研究所 | Low-noise amplification module with bypass function and control method |
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| CN112653396B (en) * | 2020-12-31 | 2023-04-07 | 电子科技大学 | Ultra-wideband bidirectional amplifier based on 500nm GaAs pHEMT process |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6240279B1 (en) * | 1998-03-20 | 2001-05-29 | Kabushiki Kaisha Toshiba | Transmission power control apparatus and a radio communication apparatus including the transmission power control apparatus |
| EP0964511A1 (en) * | 1998-06-11 | 1999-12-15 | Ace Technology | Low-noise amplifier |
| CN111510089A (en) * | 2020-04-30 | 2020-08-07 | 中国电子科技集团公司第二十四研究所 | Low-noise amplification module with bypass function and control method |
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