CN113571600B - Infrared detector and preparation method thereof - Google Patents

Infrared detector and preparation method thereof Download PDF

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CN113571600B
CN113571600B CN202110748254.1A CN202110748254A CN113571600B CN 113571600 B CN113571600 B CN 113571600B CN 202110748254 A CN202110748254 A CN 202110748254A CN 113571600 B CN113571600 B CN 113571600B
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infrared detector
bottom electrode
preparing
buffer layer
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CN113571600A (en
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张玉萍
冯叶
杨春雷
张陈斌
彭燕君
杨佳伟
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Shenzhen Institute of Advanced Technology of CAS
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Shenzhen Institute of Advanced Technology of CAS
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035218—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864—Annealing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The preparation method of the short wave infrared detector provided by the application comprises the following steps: preparing a bottom electrode on a substrate, preparing an absorption layer on the bottom electrode, preparing a buffer layer on the absorption layer, and preparing a window layer on the buffer layer, wherein the preparation of the buffer layer on the absorption layer specifically comprises the following steps: according to the preparation method of the short-wave infrared detector, the buffer layer is prepared through quantum dot spin coating, the buffer layer which is more matched with the precursor and the high-resistance layer in lattice is obtained, a more excellent P-N junction is formed, dark current of a device is reduced, quantum efficiency is improved, and the short-wave infrared detector with better performance is obtained. In addition, the application also provides a short wave infrared detector.

Description

Infrared detector and preparation method thereof
Technical Field
The application relates to the technical field of photoelectricity, in particular to a short wave infrared detector and a preparation method thereof.
Background
The near infrared band detector imaging has higher definition and detail resolution, and has low-light night vision and stronger water mist penetrating capacity, so that the imaging method has wide market in the fields of mobile phones, unmanned aerial vehicles, security protection, medical treatment and the like. The current InGaAs detector needs to work at low temperature, and the irreplaceability of the preparation process is added, so that the cost is high. Under the era of pursuing low cost and high efficiency, the exploration of new materials and the optimization of production process are the main problems of high cost of the current commercial detector.
Cu2-II-IV-VI4 group-based photoelectric film absorption material Cu 2 Cd x Zn 1-x SnSe 4 Hereinafter referred to as%CCZTSe), which realizes the response of visible light and near infrared band, and an important part of the CCZTSe shortwave infrared detector structure, namely a buffer layer, is used for forming a P-N junction with an absorption layer, and is generally prepared by depositing cadmium sulfide by a chemical water bath method (CBD), wherein the main steps are that a mixed solution of cadmium sulfate and ammonia water is poured into a reactor together with thiourea solution, and a layer of CdS film with the thickness of about 50nm is deposited on the surface of a device at 67 ℃, and the buffer layer prepared by the method has the following problems: the solution method has poor sample uniformity in large-area production, the band gap of cadmium sulfide is 2.5eV, and the band gap is narrower, so that the loss of solar energy short wave band is caused; and the heavy metal cadmium in the sample is harmful to human bodies and the environment, and the sample uniformity is poor in large-area production, so that the sample is not beneficial to large-scale industrial application; in addition, the lattice constants of the materials are different, so that lattice mismatch occurs between the cadmium sulfide buffer layer and the absorption layer and between the cadmium sulfide buffer layer and the window layer.
Disclosure of Invention
In view of this, there is a need to provide a short wave infrared detector with a higher bandgap, lattice matched with the absorber layer and window layer materials, suitable for mass production.
In order to solve the problems, the application adopts the following technical scheme:
the application provides a preparation method of a short wave infrared detector, which comprises the following steps:
preparing a bottom electrode on a substrate;
preparing an absorption layer on the bottom electrode;
preparing a buffer layer on the absorption layer, specifically comprising: dripping a quantum dot solution dispersed in an organic solution on the absorption layer, spin-coating, heating to 100-150 ℃ and annealing for 2-3min to obtain the buffer layer; a kind of electronic device with high-pressure air-conditioning system
And preparing a window layer on the buffer layer.
In some of these embodiments, the substrate is soda lime glass or Si sheet.
In some of these embodiments, the bottom electrode is a molybdenum electrode, gold, titanium, stainless steel, ITO.
In some of these embodiments, the step of preparing the bottom electrode on the substrate specifically includes:
putting the substrate into a vacuum molybdenum chamber, introducing Ar gas to control the air pressure in the chamber to be 1.0-3.0Pa, performing direct current sputtering with power of 300-350W for 8-10 circles, performing power sputtering with power of 800-1000W for 4-6 circles under the air pressure of 0.3-0.5Pa, closing Ar gas, cooling for 5-10min, and taking out to obtain the Mo substrate as a bottom electrode.
In some of these embodiments, the step of preparing the absorbing layer on the bottom electrode specifically includes the following steps:
feeding the bottom electrode with the substrate into an MBE vacuum coating cavity, and controlling the vacuum degree to be 2x10 -5 -5x10 -5 Pa, adopting a five-source simultaneous evaporation method, using Cu, zn, cd, sn and Se as target materials, and using a one-step method to grow a precursor as the absorption layer.
In some embodiments, in the step of dropping a quantum dot solution dispersed in an organic solution onto the absorption layer, and performing spin-coating and then heating to 100-150 ℃ for annealing for 2-3min to obtain the buffer layer, the organic solution includes n-hexane, octane and the like.
In some embodiments, in the step of dropping a quantum dot solution dispersed in an organic solution onto the absorption layer and performing spin-coating and then heating to 100-150 ℃ for annealing for 2-3min to obtain the buffer layer, the quantum dot solution includes ZnSe or ZnS.
In some embodiments, the step of preparing a window layer on the buffer layer specifically includes the steps of:
sending the four samples obtained in the steps into an i-ZnO and AZO cavity, and introducing Ar and O 2 Igniting i-ZnO under the power of 100-150W, sputtering for 4-6 circles under the power of 100-150W, sputtering for 35-40 circles under the power of 450-550W, and then introducing Ar and H 2 After the AZO target is started under 400-500W, sputtering is carried out for 15-20 circles under 700-800W, and a window layer of 300-400nm is obtained.
In some of these embodiments, the window layer is composed of two parts, namely intrinsic zinc oxide and aluminum-doped zinc oxide.
In addition, the application also provides a short-wave infrared detector, which is prepared by the preparation method of the short-wave infrared detector.
By adopting the technical scheme, the application has the following technical effects:
the preparation method of the short wave infrared detector provided by the application comprises the following steps: preparing a bottom electrode on a substrate, preparing an absorption layer on the bottom electrode, preparing a buffer layer on the absorption layer, and preparing a window layer on the buffer layer, wherein the preparation of the buffer layer on the absorption layer specifically comprises the following steps: according to the preparation method of the short-wave infrared detector, the buffer layer is prepared through quantum dot spin coating, the buffer layer which is more matched with the precursor and the high-resistance layer in lattice is obtained, a more excellent P-N junction is formed, dark current of a device is reduced, quantum efficiency is improved, and the short-wave infrared detector with better performance is obtained.
In addition, the preparation method of the short-wave infrared detector provided by the application has the advantages of simple process, controllable process, good repeatability, low cost and convenience for large-area production.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following description will briefly explain the embodiments of the present application or the drawings used in the description of the prior art, and it is obvious that the drawings described below are only some embodiments of the present application, and other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a flow chart of steps of a method for manufacturing a short-wave infrared detector provided by the application.
Fig. 2 is a schematic structural diagram of a short wave infrared detector provided by the application.
FIG. 3 is a graph showing dark current contrast of a sample prepared by a spin coating method and a sample prepared by a water bath method for preparing ZnSe and CdS according to example 1 of the present application.
FIG. 4 is a graph showing the comparison of external quantum efficiencies of ZnSe prepared by spin coating and CdS prepared by water bath method provided in example 1 of the present application.
Detailed Description
Embodiments of the present application are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative and intended to explain the present application and should not be construed as limiting the application.
In the description of the present application, it should be understood that the directions or positional relationships indicated by the terms "upper", "lower", "horizontal", "inner", "outer", etc., are based on the directions or positional relationships shown in the drawings, are merely for convenience in describing the present application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present application.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present application, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
The present application will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present application more apparent.
Referring to fig. 1, a flowchart of steps of a method for manufacturing a short-wave infrared detector 100 according to an embodiment of the application includes the following steps:
step S110: a bottom electrode is prepared on a substrate.
In some of these embodiments, the substrate is soda lime glass or Si sheet.
In some of these embodiments, the bottom electrode is a molybdenum electrode, gold, titanium, stainless steel, ITO.
Specifically, the substrate is placed in a vacuum molybdenum chamber, ar gas is introduced into the vacuum molybdenum chamber to control the air pressure in the chamber to be 1.0-3.0Pa,300-350W power direct current is used for sputtering 8-10 circles, 800-1000W power is used for sputtering 4-6 circles under the air pressure of 0.3-0.5Pa, ar gas is closed, cooling is carried out for 5-10min, and then the Mo substrate is taken out to be used as a bottom electrode.
Step S120: an absorber layer is prepared on the bottom electrode.
In some of these embodiments, the step of preparing the absorbing layer on the bottom electrode specifically includes the following steps:
feeding the bottom electrode with the substrate into an MBE vacuum coating cavity, and controlling the vacuum degree to be 2x10 -5 -5x10 -5 Pa, adopting a five-source simultaneous evaporation method, using Cu, zn, cd, sn and Se as target materials, and using a one-step method to grow a precursor as the absorption layer.
Specifically, the bottom electrode with the substrate is heated to 120-130 ℃ and stabilized, the five source targets are respectively preheated for 20min and then the baffle is opened, vapor deposition is carried out for 20-30min, and the baffle is closed and then taken out, so that the absorbing layer material with the thickness of about 1-2 mu m is obtained.
Step S130: a buffer layer is prepared on the absorber layer.
Specifically, the quantum dot solution dispersed in the organic solution is dripped on the absorption layer, spin-coated and heated to 100-150 ℃ for annealing for 2-3min, and the buffer layer is obtained.
It can be understood that the buffer layer is prepared by quantum dot spin coating, so that the buffer layer which is more matched with the precursor and the high-resistance layer in lattice is obtained, a more excellent P-N junction is formed, the dark current of the device is reduced, the quantum efficiency is improved, and the short wave infrared detector with better performance is obtained.
In some of these embodiments, the organic solution includes n-hexane, octane, and the like.
In some of these embodiments, the quantum dot solution comprises ZnSe or ZnS.
Furthermore, the spin coating process can be replaced by modes of spray coating, ink-jet printing and the like, and the prepared buffer layer can be used for a CCZTSe short wave infrared detector and a CIGS solar cell.
Step S140: and preparing a window layer on the buffer layer.
Specifically, the samples obtained in the steps are sent into an i-ZnO and AZO cavity, ar and O are introduced 2 Igniting i-ZnO under the power of 100-150W, sputtering for 4-6 circles under the power of 100-150W, sputtering for 35-40 circles under the power of 450-550W, and then introducing Ar and H 2 After the AZO target is started under 400-500W, sputtering is carried out for 15-20 circles under 700-800W, and a window layer of 300-400nm is obtained.
Further, the window layer is composed of two parts, i.e., intrinsic zinc oxide (i-ZnO) and aluminum doped zinc oxide (AZO), which each play different roles, and the high-resistance i-ZnO is an important component of the detector, mainly because it can form a good n-region with the CdS buffer layer, while the low-resistance AZO has a very high transmittance, and the double-layer window has the advantage that it can have a good lattice match with the CdS buffer layer and also has a very good ohmic contact with the top electrode.
Referring to fig. 2, a schematic structure diagram of a short wave infrared detector provided by the present application includes a substrate 110, a bottom electrode 120, an absorption layer 130, a buffer layer 140 and a window layer 150.
The specific preparation of each unit of the short-wave infrared detector is described in detail in the above embodiments, and will not be described herein.
The preparation method of the short-wave infrared detector provided by the application has the advantages of simple process, controllable process, good repeatability, low cost and convenience for large-area production, and the buffer layer, the precursor and the high-resistance layer of the prepared short-wave infrared detector are more matched in lattice, so that a more excellent P-N junction is formed, the dark current of the device is reduced, and the quantum efficiency is improved.
The following describes the technical scheme of the present application in detail with reference to specific examples.
Example 1
1. Preparation of molybdenum substrates
Putting the cleaned soda-lime glass substrate into a vacuum molybdenum chamber, introducing Ar gas to control the air pressure in the chamber to be 1.0Pa, sputtering 10 circles with 350W power direct current, sputtering 4 circles with 1000W power under the air pressure of 0.5Pa, closing Ar gas, cooling for 5min, and taking out. A Mo substrate of about 500nm thickness was obtained as a bottom electrode.
2. Preparation of the precursor
The sample taken out in the step one is sent into an MBE vacuum coating cavity, and the vacuum degree is controlled to be 2x10 -5 Pa, the equipment adopts a five-source simultaneous evaporation method, cu, zn, cd, sn and Se are used as target materials, and a one-step method is used for growing a precursor which is used as an absorption layer of the detector. Firstly, heating the substrate to 120 ℃ and stabilizing, respectively preheating five source targets for 20min, opening a baffle plate, evaporating for 20min simultaneously, closing the baffle plate, and taking out to obtain the absorbing layer material with the thickness of about 1 mu m.
3. Preparation of buffer layer
Placing a sample on a spin coater, opening a vacuum pump to hold the sample, taking out a ZnSe quantum dot solution with the size of 3nm dispersed in n-hexane by using a liquid-transferring gun, dripping the ZnSe quantum dot solution in the middle and four corners of the sample, setting the rotation speed of the spin coater at 3000 rpm, spin-coating for 45s, placing the ZnSe quantum dot solution on a heating table after spin-coating is finished, and annealing for 2min at 100 ℃.
4. Preparation of window layer
The samples obtained in the steps are sent into an i-ZnO and AZO cavity, ar and O are introduced 2 Igniting i-ZnO under 100W power, sputtering at 150W for 6 circles, sputtering at 450W for 40 circles, and introducing Ar and H 2 After starting the AZO target at 500W, sputtering was performed at 800W for 15 circles to obtain a 300nm window layer.
Referring to fig. 3, a comparison chart of dark current of a sample of ZnSe prepared by a spin coating method and CdS prepared by a water bath method provided in example 1 of the present application is shown, and the dark current of ZnSe prepared by the spin coating method provided in example 1 is lower.
Referring to fig. 4, a comparison chart of external quantum efficiency of a sample of ZnSe prepared by a spin coating method and CdS prepared by a water bath method provided in example 1 of the present application is shown, and the external quantum efficiency of ZnSe prepared by the spin coating method provided in example 1 is higher.
Example 2
1. Preparation of gold substrate
Putting the cleaned Si sheet into a vacuum molybdenum chamber, introducing Ar gas to control the air pressure in the chamber to be 3.0Pa, sputtering 10 circles under 300W power, sputtering 6 circles under 0.3Pa power, closing Ar gas, cooling for 10min, and taking out. A gold substrate of about 400nm thickness was obtained as a bottom electrode.
2. Preparation of the precursor
The sample taken out in the step one is sent into an MBE vacuum coating cavity, and the vacuum degree is controlled to be 5x10 -5 Pa, the equipment adopts a five-source simultaneous evaporation method, cu, zn, cd, sn and Se are used as target materials, and a one-step method is used for growing a precursor which is used as an absorption layer of the detector. Firstly, heating the substrate to 130 ℃ and stabilizing, respectively preheating five source targets for 20min, opening a baffle plate, evaporating for 30min, closing the baffle plate, and taking out to obtain the absorbing layer material with the thickness of about 2 mu m.
3. Preparation of buffer layer
Placing a sample on a spin coater, opening a vacuum pump to hold the sample, taking out a ZnSe quantum dot solution with the size of 10nm dispersed in n-hexane by using a liquid-transferring gun, dripping the ZnSe quantum dot solution in the middle and four corners of the sample, setting the rotation speed of the spin coater at 3000 rpm, spin-coating for 45s, placing the ZnSe quantum dot solution on a heating table after spin-coating is finished, and annealing for 3min at 150 ℃.
4. Preparation of window layer
The samples obtained in the steps are sent into an i-ZnO and AZO cavity, ar and O are introduced 2 Igniting i-ZnO under 150W power, sputtering at 150W for 4 circles, sputtering at 550W for 40 circles, and introducing Ar and H 2 After starting the AZO target at 400W, sputtering was performed at 700W for 20 turns to obtain a window layer of 400 nm.
Example 3
1. Preparation of titanium substrates
And (3) introducing Ar gas into the cleaned soda-lime glass substrate vacuum molybdenum chamber, controlling the air pressure in the chamber to be 3.0Pa, sputtering 10 circles under 300W power, sputtering 6 circles under 0.3Pa power, closing Ar gas, cooling for 10min, and taking out. A titanium substrate of about 400nm thickness was obtained as a bottom electrode.
2. Preparation of the precursor
The sample taken out in the step one is sent into an MBE vacuum coating cavityControlling the vacuum degree to be 3x10 -5 Pa, the equipment adopts a five-source simultaneous evaporation method, cu, zn, cd, sn and Se are used as target materials, and a one-step method is used for growing a precursor which is used as an absorption layer of the detector. Firstly, heating the substrate to 130 ℃ and stabilizing, respectively preheating five source targets for 20min, opening a baffle plate, evaporating for 25min, closing the baffle plate, and taking out to obtain the absorbing layer material with the thickness of about 1.5 mu m.
3. Preparation of buffer layer
Placing a sample on a spin coater, opening a vacuum pump to absorb the sample, taking out a ZnSe quantum dot solution with the size of 10nm dispersed in octane by using a liquid-transferring gun, dripping the ZnSe quantum dot solution in the middle and four corners of the sample, setting the rotation speed of the spin coater at 3000 rpm, spin-coating for 45s, placing the ZnSe quantum dot solution on a heating table after spin-coating is finished, and annealing at 120 ℃ for 2.5min.
4. Preparation of window layer
The samples obtained in the steps are sent into an i-ZnO and AZO cavity, ar and O are introduced 2 Igniting i-ZnO under the power of 120W, sputtering 5 circles at 120W, sputtering 38 circles at 500W, and introducing Ar and H 2 After starting the AZO target at 450W, sputtering was performed at 750W for 18 cycles to obtain a window layer of 350 nm.
The foregoing description of the preferred embodiments of the present application has been provided for the purpose of illustrating the general principles of the present application and is not to be construed as limiting the scope of the application in any way. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present application, and other embodiments of the present application as will occur to those skilled in the art without the exercise of inventive faculty, are intended to be included within the scope of the present application.

Claims (7)

1. The preparation method of the infrared detector is characterized by comprising the following steps of:
preparing a bottom electrode on a substrate;
preparing an absorption layer on the bottom electrode;
preparing a buffer layer on the absorption layer, specifically comprising: dripping a quantum dot solution dispersed in an organic solution on the absorption layer, spin-coating, heating to 100-150 ℃ and annealing for 2-3min to obtain the buffer layer; a kind of electronic device with high-pressure air-conditioning system
Preparing a window layer on the buffer layer; wherein:
preparing an absorber layer on the bottom electrode includes: feeding the bottom electrode with the substrate into an MBE vacuum coating cavity, and controlling the vacuum degree to be 2x10 -5 -5x10 -5 Pa, adopting a five-source simultaneous evaporation method, taking Cu, zn, cd, sn and Se as target materials, and using a one-step method to grow a precursor as the absorption layer;
preparing a buffer layer on the absorber layer further comprises: the organic solution comprises n-hexane and octane; the quantum dot solution includes ZnSe or ZnS.
2. The method for manufacturing an infrared detector as set forth in claim 1, wherein said substrate is soda lime glass or Si sheet.
3. The method for manufacturing an infrared detector as set forth in claim 1, wherein said bottom electrode is a molybdenum electrode or gold or titanium or stainless steel or ITO.
4. A method for fabricating an infrared detector as defined in claim 3, wherein the step of fabricating a bottom electrode on the substrate comprises:
putting the substrate into a vacuum molybdenum chamber, introducing Ar gas to control the air pressure in the chamber to be 1.0-3.0Pa, performing direct current sputtering with power of 300-350W for 8-10 circles, performing power sputtering with power of 800-1000W for 4-6 circles under the air pressure of 0.3-0.5Pa, closing Ar gas, cooling for 5-10min, and taking out to obtain the Mo substrate as a bottom electrode.
5. The method for manufacturing an infrared detector as set forth in claim 1, wherein the step of manufacturing a window layer on the buffer layer comprises the steps of:
the samples obtained in the steps are sent into an i-ZnO and AZO cavity, ar and O are introduced 2 Igniting i-ZnO under the power of 100-150W, sputtering for 4-6 circles under the power of 100-150W, sputtering for 35-40 circles under the power of 450-550W, and then introducing Ar and H 2 After the AZO target is started under 400-500W, sputtering is carried out for 15-20 circles under 700-800W, and a window layer of 300-400nm is obtained.
6. The method for fabricating an infrared detector as recited in claim 5, wherein said window layer is comprised of two parts, i.e., intrinsic zinc oxide and aluminum doped zinc oxide.
7. An infrared detector prepared by the method of any one of claims 1 to 6.
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