CN113571229B - Mesh-junction-free front silver paste for crystalline silicon PERC solar cell and preparation method thereof - Google Patents
Mesh-junction-free front silver paste for crystalline silicon PERC solar cell and preparation method thereof Download PDFInfo
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 34
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 16
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 14
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 14
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 14
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 229910052709 silver Inorganic materials 0.000 title claims abstract description 11
- 239000004332 silver Substances 0.000 title claims abstract description 11
- 229920005989 resin Polymers 0.000 claims abstract description 13
- 239000011347 resin Substances 0.000 claims abstract description 13
- 239000011521 glass Substances 0.000 claims abstract description 8
- 239000000843 powder Substances 0.000 claims abstract description 8
- 239000002002 slurry Substances 0.000 claims description 7
- ZFOZVQLOBQUTQQ-UHFFFAOYSA-N Tributyl citrate Chemical compound CCCCOC(=O)CC(O)(C(=O)OCCCC)CC(=O)OCCCC ZFOZVQLOBQUTQQ-UHFFFAOYSA-N 0.000 claims description 6
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 claims description 5
- CRWNQZTZTZWPOF-UHFFFAOYSA-N 2-methyl-4-phenylpyridine Chemical compound C1=NC(C)=CC(C=2C=CC=CC=2)=C1 CRWNQZTZTZWPOF-UHFFFAOYSA-N 0.000 claims description 5
- 229920000178 Acrylic resin Polymers 0.000 claims description 5
- 239000004925 Acrylic resin Substances 0.000 claims description 5
- UDSFAEKRVUSQDD-UHFFFAOYSA-N Dimethyl adipate Chemical compound COC(=O)CCCCC(=O)OC UDSFAEKRVUSQDD-UHFFFAOYSA-N 0.000 claims description 5
- 239000001856 Ethyl cellulose Substances 0.000 claims description 5
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims description 5
- 239000004952 Polyamide Substances 0.000 claims description 5
- 229920001249 ethyl cellulose Polymers 0.000 claims description 5
- 235000019325 ethyl cellulose Nutrition 0.000 claims description 5
- 238000000227 grinding Methods 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 5
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 claims description 5
- 229920002647 polyamide Polymers 0.000 claims description 5
- 229920002545 silicone oil Polymers 0.000 claims description 5
- 239000004094 surface-active agent Substances 0.000 claims description 5
- IFPMZBBHBZQTOV-UHFFFAOYSA-N 1,3,5-trinitro-2-(2,4,6-trinitrophenyl)-4-[2,4,6-trinitro-3-(2,4,6-trinitrophenyl)phenyl]benzene Chemical compound [O-][N+](=O)C1=CC([N+](=O)[O-])=CC([N+]([O-])=O)=C1C1=C([N+]([O-])=O)C=C([N+]([O-])=O)C(C=2C(=C(C=3C(=CC(=CC=3[N+]([O-])=O)[N+]([O-])=O)[N+]([O-])=O)C(=CC=2[N+]([O-])=O)[N+]([O-])=O)[N+]([O-])=O)=C1[N+]([O-])=O IFPMZBBHBZQTOV-UHFFFAOYSA-N 0.000 claims description 3
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 claims description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 claims description 3
- 229920006217 cellulose acetate butyrate Polymers 0.000 claims description 3
- 150000002148 esters Chemical class 0.000 claims description 3
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 claims description 3
- -1 alcohol ester Chemical class 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 238000005516 engineering process Methods 0.000 abstract description 6
- 239000012752 auxiliary agent Substances 0.000 abstract description 5
- 239000013008 thixotropic agent Substances 0.000 abstract description 4
- 238000009795 derivation Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 3
- 239000002904 solvent Substances 0.000 abstract description 3
- 238000007650 screen-printing Methods 0.000 description 13
- 239000000463 material Substances 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- NIQCNGHVCWTJSM-UHFFFAOYSA-N Dimethyl phthalate Chemical compound COC(=O)C1=CC=CC=C1C(=O)OC NIQCNGHVCWTJSM-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- PAAZPARNPHGIKF-UHFFFAOYSA-N 1,2-dibromoethane Chemical compound BrCCBr PAAZPARNPHGIKF-UHFFFAOYSA-N 0.000 description 1
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- MQIUGAXCHLFZKX-UHFFFAOYSA-N Di-n-octyl phthalate Natural products CCCCCCCCOC(=O)C1=CC=CC=C1C(=O)OCCCCCCCC MQIUGAXCHLFZKX-UHFFFAOYSA-N 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 1
- 239000004359 castor oil Substances 0.000 description 1
- 235000019438 castor oil Nutrition 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- FBSAITBEAPNWJG-UHFFFAOYSA-N dimethyl phthalate Natural products CC(=O)OC1=CC=CC=C1OC(C)=O FBSAITBEAPNWJG-UHFFFAOYSA-N 0.000 description 1
- 229960001826 dimethylphthalate Drugs 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 230000001804 emulsifying effect Effects 0.000 description 1
- ZEMPKEQAKRGZGQ-XOQCFJPHSA-N glycerol triricinoleate Natural products CCCCCC[C@@H](O)CC=CCCCCCCCC(=O)OC[C@@H](COC(=O)CCCCCCCC=CC[C@@H](O)CCCCCC)OC(=O)CCCCCCCC=CC[C@H](O)CCCCCC ZEMPKEQAKRGZGQ-XOQCFJPHSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
- H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Dispersion Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Sustainable Energy (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photovoltaic Devices (AREA)
- Conductive Materials (AREA)
Abstract
The invention discloses a mesh-junction-free front silver paste for a crystalline silicon PERC solar cell and a preparation method thereof. The non-mesh front silver paste for the crystalline silicon PERC solar cell comprises the following components in percentage by weight: 86-90% of silver powder, 0.5-3% of glass powder, 4-10% of organic carrier and 0.2-3% of auxiliary agent, wherein the organic carrier comprises the following components in percentage by weight: 3-10% of resin, 3-6% of thixotropic agent and 84-93% of solvent. By adopting the limiting method, the obtained non-network-junction front conductive silver paste can be matched with the non-network-junction screen plate to be smoothly printed at the line width of 18-20 mu m, the problems that the conventional screen plate fine grid line used by the front electrode uses the conventional screen plate with the network junction, the line width of the fine grid line is limited by the network junction, the improvement of the aspect ratio of the fine grid line is limited and the like in the background technology are solved, the fine grid line with the sintered line width of 28-40 mu m, the height of 12-18 mu m and the aspect ratio of 0.4-0.54 can be obtained, the current derivation capacity of a battery piece is greatly improved, and the photoelectric conversion efficiency is increased.
Description
Technical Field
The invention belongs to the technical field of solar cells, and particularly relates to a mesh-junction-free front silver paste for a crystalline silicon PERC solar cell and a preparation method thereof.
Background
Energy is a foundation stone for economic and social development, and when non-renewable energy such as electric power, coal, petroleum and the like is frequently and urgently needed, the energy problem increasingly becomes a bottleneck restricting the development of the international socioeconomic development. Solar energy is the most abundant renewable energy source available to humans, and solar cells are the direct conversion of solar energy into electrical energy. Under the promotion of huge potential of the international photovoltaic market, solar cell manufacturing industries of various countries strive to invest huge capital and expand production to strive for a place. Silicon-based solar cells remain an important item for future development of solar cells in terms of conversion efficiency and material sources.
In recent two years, crystalline silicon PERC cells have gained rapid development. The PERC technology, i.e., the passivation emitter back contact technology, is a technology that a passivation layer is formed on the back of a cell by using SiNx or Al2O3, so that absorption of long-wavelength light is increased, a potential difference between P and N electrodes is maximized, electron recombination is reduced, and thus cell conversion efficiency is improved.
The conventional screen printing plate with the mesh knots is used for the thin grid lines of the screen printing plate used for the front electrode, the line width of the thin grid lines is 24-28 microns, and the existence of the mesh knots limits the line width of the thin grid lines and the improvement of the aspect ratio of the thin grid lines, so that the development of the non-mesh-knot front silver paste which is suitable for narrowing the line width to be 18-20 microns is urgently needed, the width of the thin grid lines is reduced, the height of the thin grid lines is increased, the aspect ratio of the thin grid lines is improved, the current derivation capacity of a battery piece is improved, and the photoelectric conversion efficiency is increased.
Disclosure of Invention
Aiming at the problems in the prior art, the invention mainly solves the technical problem of providing the mesh-free front conductive silver paste for the crystalline silicon PERC solar cell and the preparation method thereof, and the invention reasonably allocates the silver powder, the glass powder, the resin, the organic solvent and the auxiliary agent, so that the front conductive silver paste has good adaptability to the mesh-free screen printing metallization process with narrow line width (18-20 mu m), and compared with the traditional screen printing metallization process, the front conductive silver paste has good ink permeability and simultaneously gives consideration to linear molding, thereby achieving the purposes of reducing the width of a fine grid, increasing the height of the fine grid line and improving the height-width ratio of the fine grid line, further improving the current leading-out capability of a cell and increasing the photoelectric conversion efficiency.
In order to solve the technical problems, the invention adopts a technical scheme that: the non-mesh-junction front silver paste for the crystalline silicon PERC solar cell comprises the following raw materials in percentage by weight: 86-90% of silver powder, 0.5-3% of glass powder, 4-10% of organic carrier and 0.2-3% of auxiliary agent, wherein the organic carrier comprises the following components in percentage by weight: 3-10% of resin, 3-6% of thixotropic agent and 84-93% of solvent.
Further, the present invention also defines that the silver powder has D50 of 1.0 to 3.0 μm and a specific surface area of 0.2 to 0.9m2(ii) g, tap density of 4.0-6.6g/cm3。
Furthermore, the invention also defines that the organic solvent comprises two or more than two mixtures of butyl carbitol, butyl carbitol acetate, diethylene glycol dibutyl ether, alcohol ester dodeca, tributyl citrate, dimethyl adipate, dimethyl phthalate, dioctyl phthalate and DBE.
Further, the invention also defines that the resin comprises one or more of ethyl cellulose, acrylic resin, polyvinyl butyral resin, cellulose acetate butyrate, rosin resin, polyester resin and thermoplastic resin.
Further, the invention also defines that the thixotropic agent comprises one or two of polyamide wax and hydrogenated castor oil.
Furthermore, the invention also defines that the auxiliary agent comprises one or more of a surfactant, a dispersant and organic silicone oil.
Furthermore, the invention also defines a preparation method of the mesh-free front silver paste for the crystalline silicon PERC solar cell, which is characterized by comprising the following steps of:
1) according to the weight ratio of the materials, 3-10% of resin, 3-6% of thixotropic agent and 84-93% of solvent are uniformly mixed by using a dispersing, emulsifying and stirring integrated machine, heated and dissolved uniformly at a constant temperature, and filtered after cooling to obtain an organic carrier, wherein the temperature for heating and dissolving is limited to be 60-70 ℃ at the constant temperature, and is preferably 65 ℃;
2) adding the organic carrier, the auxiliary agent, the glass powder and the silver powder obtained in the step 1) into a centrifugal machine or a planetary mixer according to the feeding proportion, uniformly mixing, and then grinding for 6-8 times by a three-roll grinder until the fineness of the slurry is less than 7 mu m to obtain the mesh-free front conductive silver paste for the solar cell.
By adopting the technology, compared with the prior art, the invention has the following beneficial effects:
at present, the width of a screen printing plate for printing the front silver paste of the conventional solar cell is 24-28 microns, the obtained conductive silver paste on the front side of the non-screen knot can be matched with the width of the screen printing plate with the non-screen knot to be smoothly printed at 18-20 microns by adopting the limited components and the preparation method, the problems that the width of a screen printing plate fine grid line used by the conventional front electrode is 24-28 microns by using the conventional screen printing plate with the screen knot, the existence of the screen knot limits the width of the fine grid line, the aspect ratio of the fine grid line is limited and improved and the like in the background technology are solved, the fine grid line with the sintering width of 28-40 microns, the height of 12-18 microns and the aspect ratio of 0.4-0.54 can be obtained, the current derivation capability of a cell is greatly improved, and the photoelectric conversion efficiency is increased.
Detailed Description
The present invention will be described in detail with reference to examples.
Example 1
The preparation method of the mesh-free front conductive silver paste for the crystalline silicon PERC solar cell comprises the following steps:
1) according to parts by weight, 41 parts of butyl carbitol acetate, 10 parts of diethylene glycol dibutyl ether, 15 parts of alcohol ester twelve, 10 parts of DBE, 10 parts of dimethyl adipate, 2.5 parts of ethyl cellulose, 2 parts of rosin resin, 1 part of acrylic resin, 3 parts of polyvinyl butyral resin and 5.5 parts of polyamide wax are mixed and stirred uniformly, heated and stirred for 1 hour at the constant temperature of 65 ℃, cooled and filtered to prepare an organic carrier;
2. adding 7.7 parts by weight of organic carrier, 0.3 part by weight of AK500 (organic silicone oil), 0.3 part by weight of TDO (surfactant), 2.4 parts by weight of glass powder and 89.3 parts by weight of silver powder into a planetary mixer in sequence, uniformly mixing, and grinding for 8 times by a three-roll grinder until the fineness of the slurry is less than 7 mu m to obtain the mesh-free front conductive silver paste for the solar cell.
Example 2
The preparation method of the mesh-free front conductive silver paste for the crystalline silicon PERC solar cell comprises the following steps:
1) according to parts by weight, 46 parts of butyl carbitol acetate, 10 parts of diethylene glycol dibutyl ether, 10 parts of alcohol ester dodeca, 10 parts of tributyl citrate, 10 parts of dimethyl adipate, 2 parts of ethyl cellulose, 1.5 parts of cellulose acetate butyrate, 1 part of acrylic resin, 4 parts of polyvinyl butyral resin and 5.5 parts of polyamide wax are mixed and stirred uniformly, heated and stirred for 1 hour at the constant temperature of 65 ℃, cooled and filtered to prepare the organic carrier;
2) sequentially according to the weight ratio: adding 7.4 parts of organic carrier, 0.5 part of AK500 (organic silicone oil), 0.3 part of TDO (surfactant), 2.4 parts of glass powder and 89.4 parts of silver powder into a centrifugal machine or a planetary mixer, uniformly mixing, and grinding for 6-8 times by a three-roll grinder until the fineness of the slurry is less than 7 mu m to obtain the mesh-free front conductive silver paste for the solar cell.
And (3) testing:
the solar cell piece manufactured by matching the embodiment with the non-mesh junction screen printing with the line width of 20 microns is manufactured by screen printing and sintering, the electrical property and the line type aspect ratio of the solar cell piece are tested, meanwhile, the solar cell piece is compared with the single crystal 163.75-sized crystalline silicon cell piece manufactured by the conventional screen printing with the line width of 26 microns at present, and the test data are shown in tables 1 and 2.
TABLE 1
| Slurry material | NCell | Uoc | Isc | FF | Rs | Rsh | Irev2 |
| Comparative example | 22.89 | 0.6876 | 10.787 | 82.51 | 0.90 | 762 | 0.08 |
| Example 1 | 22.98 | 0.6903 | 10.816 | 82.32 | 1.05 | 1179 | 0.07 |
| Example 2 | 22.94 | 0.6901 | 10.807 | 82.29 | 1.06 | 1056 | 0.07 |
As can be seen from table 1, the mesh-free front conductive silver paste for a solar cell prepared in the embodiment of the present invention is prepared into a crystalline silicon solar cell by matching 20 μm line width mesh-free screen printing and sintering, the open-circuit voltage and the short-circuit current are both significantly improved, and the photoelectric conversion efficiency is improved by 0.05 to 0.09% compared with that of the conventional paste.
TABLE 2
| Slurry material | Outer width/. mu.m | Inner width/mum | Height/. mu.m | Aspect ratio |
| Comparative example | 36.91 | 32.45 | 13.59 | 0.37 |
| Example 1 | 34.30 | 28.34 | 14.28 | 0.42 |
| Example 2 | 34.39 | 28.41 | 14.24 | 0.41 |
As can be seen from the data in table 2, the non-mesh front conductive silver paste for the solar cell prepared by the embodiment of the invention is prepared on the crystalline silicon solar cell by matching the line width of 20 μm and performing non-mesh screen printing and sintering, so that the width of the thin grid line can be obviously reduced, the height of the thin grid line can be increased, and the aspect ratio of the thin grid line can be increased.
The above description is only for the preferred embodiment of the present invention and should not be taken as limiting the scope of the present invention, and all changes that can be made in the details of the description and the equivalents thereof, whether directly or indirectly applied to other related fields, are intended to be embraced therein.
Claims (2)
1. A preparation method of mesh-junction-free front silver paste for a crystalline silicon PERC solar cell is characterized by comprising the following steps:
1) according to parts by weight, 41 parts of butyl carbitol acetate, 10 parts of diethylene glycol dibutyl ether, 15 parts of alcohol ester twelve, 10 parts of DBE, 10 parts of dimethyl adipate, 2.5 parts of ethyl cellulose, 2 parts of rosin resin, 1 part of acrylic resin, 3 parts of polyvinyl butyral resin and 5.5 parts of polyamide wax are mixed and stirred uniformly, heated and stirred for 1 hour at the constant temperature of 65 ℃, cooled and filtered to prepare an organic carrier;
2) adding 7.7 parts by weight of organic carrier, 0.3 part by weight of AK500 organic silicone oil, 0.3 part by weight of TDO surfactant, 2.4 parts by weight of glass powder and 89.3 parts by weight of silver powder into a planetary mixer in sequence, uniformly mixing, and grinding for 8 times by a three-roll grinder until the fineness of the slurry is less than 7 mu m to obtain the mesh-free front conductive silver paste for the solar cell.
2. A preparation method of mesh-junction-free front silver paste for a crystalline silicon PERC solar cell is characterized by comprising the following steps:
1) according to parts by weight, 46 parts of butyl carbitol acetate, 10 parts of diethylene glycol dibutyl ether, 10 parts of alcohol ester dodeca, 10 parts of tributyl citrate, 10 parts of dimethyl adipate, 2 parts of ethyl cellulose, 1.5 parts of cellulose acetate butyrate, 1 part of acrylic resin, 4 parts of polyvinyl butyral resin and 5.5 parts of polyamide wax are mixed and stirred uniformly, heated and stirred for 1 hour at the constant temperature of 65 ℃, cooled and filtered to prepare the organic carrier;
2) sequentially according to the weight ratio: adding 7.4 parts of organic carrier, 0.5 part of AK500 organic silicone oil, 0.3 part of TDO surfactant, 2.4 parts of glass powder and 89.4 parts of silver powder into a centrifugal machine or a planetary mixer, uniformly mixing, and grinding for 6-8 times by a three-roll grinder until the fineness of the slurry is less than 7 mu m to obtain the meshless front conductive silver slurry for the solar cell.
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| CN103400634A (en) * | 2013-07-22 | 2013-11-20 | 上海玻纳电子科技有限公司 | Conductive silver paste used for crystalline silicon solar cell front electrode and preparation method thereof |
| CN106251935A (en) * | 2016-09-27 | 2016-12-21 | 北京市合众创能光电技术有限公司 | Crystal silicon solar batteries front gate line conductive silver paste and preparation method thereof |
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| CN108039224A (en) * | 2017-12-22 | 2018-05-15 | 江苏国瓷泓源光电科技有限公司 | For silicon wafer cut by diamond wire solar cell front side silver paste material and preparation method thereof |
| CN109243669A (en) * | 2018-09-28 | 2019-01-18 | 常州聚和新材料股份有限公司 | A kind of conduction positive silver paste and preparation method thereof |
| CN110111923A (en) * | 2019-04-22 | 2019-08-09 | 苏州市贝特利高分子材料股份有限公司 | Solar battery with hachure high-aspect-ratio electrodes |
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| CN103400634A (en) * | 2013-07-22 | 2013-11-20 | 上海玻纳电子科技有限公司 | Conductive silver paste used for crystalline silicon solar cell front electrode and preparation method thereof |
| CN106251935A (en) * | 2016-09-27 | 2016-12-21 | 北京市合众创能光电技术有限公司 | Crystal silicon solar batteries front gate line conductive silver paste and preparation method thereof |
| CN107195354A (en) * | 2017-04-20 | 2017-09-22 | 广东爱康太阳能科技有限公司 | One kind back of the body passivation silicon solar cell positive electrode silver paste and preparation method thereof |
| CN108039224A (en) * | 2017-12-22 | 2018-05-15 | 江苏国瓷泓源光电科技有限公司 | For silicon wafer cut by diamond wire solar cell front side silver paste material and preparation method thereof |
| CN109243669A (en) * | 2018-09-28 | 2019-01-18 | 常州聚和新材料股份有限公司 | A kind of conduction positive silver paste and preparation method thereof |
| CN110111923A (en) * | 2019-04-22 | 2019-08-09 | 苏州市贝特利高分子材料股份有限公司 | Solar battery with hachure high-aspect-ratio electrodes |
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