CN113564715B - Crystal selection method of single crystal high-temperature alloy and single crystal high-temperature alloy casting - Google Patents

Crystal selection method of single crystal high-temperature alloy and single crystal high-temperature alloy casting Download PDF

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CN113564715B
CN113564715B CN202110710695.2A CN202110710695A CN113564715B CN 113564715 B CN113564715 B CN 113564715B CN 202110710695 A CN202110710695 A CN 202110710695A CN 113564715 B CN113564715 B CN 113564715B
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crystal
spiral
section
single crystal
selection method
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CN113564715A (en
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徐维台
马德新
皮立波
赵运兴
徐福泽
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Shenzhen Wedge Zhongnan Research Institute Co ltd
Shenzhen Wedge Aviation Technology Co ltd
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Shenzhen Wedge Zhongnan Research Institute Co ltd
Shenzhen Wedge Aviation Technology Co ltd
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/52—Alloys
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method

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  • Crystallography & Structural Chemistry (AREA)
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Abstract

The invention discloses a crystal selection method of a single crystal high temperature alloy and a single crystal high temperature alloy casting, aiming at effectively reducing the orientation deviation of the single crystal high temperature alloy and improving the performance of the single crystal high temperature alloy. Therefore, in the single crystal superalloy crystal selection method provided by the embodiment of the invention, the crystal starting section and the spiral crystal selection section of the crystal selector are eccentrically connected, so that in the directional solidification process, crystal grains with small orientation of the core part of the crystal starting section enter the spiral crystal selection section from one side of the bottom of the spiral crystal selection section deviated to the initial extending direction of the spiral crystal selection section, thereby obtaining growth advantages, and eliminating crystal grains with large orientation deviation at the outer side of the crystal starting section, so as to obtain a single crystal superalloy casting with small orientation deviation.

Description

Crystal selection method of single crystal high temperature alloy and single crystal high temperature alloy casting
Technical Field
The invention belongs to the technical field of single crystal high temperature alloy preparation, and particularly relates to a crystal selection method of a single crystal high temperature alloy and a single crystal high temperature alloy casting.
Background
The single crystal high temperature alloy blade is a key component in an aeroengine and an industrial gas turbine, and the performance of the blade plays a very key role in the thrust and the efficiency of the engine. The single crystal blade is usually prepared by a directional solidification process, which comprises the steps of wax mold pressing, tree assembling, shell manufacturing, dewaxing, mold shell roasting, pouring and shelling to obtain a casting. The technical means for obtaining the single crystal is as follows: and in the solidification, a crystal selector is used for carrying out crystallization, and a crystal grain is screened out to reach the blade cavity, so that a single crystal blade casting is obtained. The [001] crystal orientation of the nickel-based single crystal alloy is the preferred direction, so the crystal grain orientation obtained by the spiral crystal selector is near to the [001 ].
The single crystal blade has anisotropy and optimal mechanical properties in the [001] direction, so that in the directional solidification of the single crystal blade, the deviation of the blade orientation from the [001] direction is expected to be as small as possible, and the deviation is required to be less than 15 degrees according to the current industry standard. Because the crystal starting section has a surface influence area with larger orientation deviation, the average value of the crystal orientation deviation of the single crystal blade screened by the existing spiral crystal selector is usually 7-9 degrees, the dispersion is larger, the probability of more than 10 degrees is more than 10 percent, wherein the rejection probability is about 3 percent when the angle is more than 15 degrees, the performance of the blade is reduced due to the larger orientation deviation, and the uniformity of the performance of the blade is also reduced due to the large-angle orientation deviation.
In summary, there is a need for an improvement of the existing crystal selection method.
Disclosure of Invention
The invention mainly aims to provide a crystal selection method of a single crystal superalloy and a single crystal superalloy casting, aiming at effectively reducing the orientation deviation of the single crystal superalloy and improving the performance of the single crystal superalloy.
Therefore, in the single crystal superalloy crystal selection method provided by one aspect of the embodiment of the invention, the crystal starting section and the spiral crystal selection section of the crystal selector are eccentrically connected, so that in the directional solidification process, crystal grains with small orientation at the core part of the crystal starting section enter the spiral crystal selection section from one side of the bottom of the spiral crystal selection section, which is deviated to the initial extending direction of the spiral crystal selection section, thereby obtaining growth advantages, and crystal grains with large orientation deviation at the outer side of the crystal starting section are eliminated, so that a single crystal superalloy casting with small orientation deviation is obtained.
Specifically, the lower end of the spiral crystal selection section is connected with the upper end face of the crystal starting section, the center of the upper end face of the crystal starting section is located on the joint face of the spiral crystal selection section and the crystal starting section, and a central trajectory line deviating from the spiral crystal selection section is arranged close to the inner side of the spiral crystal selection section.
Specifically, the bonding surface is divided into a central area and an outer area arranged around the central area, and the center of the upper end surface of the crystal starting section is arranged on the bonding surface, close to one side of the initial extending direction of the spiral crystal selection section, and is positioned on the outer area.
Specifically, the crystallization section is cylindrical.
Specifically, the diameter of the crystal starting section is controlled to be 12-15 mm, and the height of the crystal starting section is controlled to be 25-35 mm.
Specifically, the inner diameter of the spiral crystal selection section is controlled to be 5-10 mm, the outer diameter is controlled to be 15-25 mm, and the height is controlled to be 25-35 mm.
Specifically, the spiral crystal selection section comprises a spiral part and linear parts arranged at two ends of the spiral part and used for connecting the crystal starting section and the casting, and the extending direction of the linear parts is parallel to the central axis of the spiral crystal selection section.
Specifically, in the directional solidification process, the temperatures of an upper heating area and a lower heating area in the directional solidification furnace are kept at 1490-1600 ℃, and the pulling speed is controlled at 1.5-5 mm/min.
According to another aspect of the embodiment of the invention, the single crystal superalloy casting is obtained by the crystal selection method.
Specifically, the single-crystal superalloy casting is a single-crystal blade.
Principles and advantages
The method is based on the idea of utilizing the competitive growth of columnar crystals, the crystal starting section and the spiral crystal selection section of the crystal selector are eccentrically connected, so that in the directional solidification process, crystal grains with small orientation of the core part of the crystal starting section enter the spiral crystal selection section from one side of the bottom of the spiral crystal selection section, which is deviated to the initial extending direction of the spiral crystal selection section, the growth advantage is obtained, the crystal grains with large orientation deviation at the outer side of the crystal starting section are eliminated, and the crystal grains enter the blade cavity through the spiral to obtain a single crystal high-temperature alloy casting with small orientation deviation.
Compared with the prior art, at least one embodiment of the invention has the following beneficial effects: the crystal grain with small orientation deviation degree in the core part of the crystal starting section is led into the spiral crystal selection section to obtain the optimal growth position only by adjusting the connection position of the crystal starting section and the spiral crystal selection section of the crystal selector, so that the aims of reducing the crystal orientation deviation and improving the qualification rate of single crystal high-temperature alloy can be achieved, the structure of the original crystal selector is not required to be changed too much, the original crystal selection process can be adopted, and the method has the advantages of strong operability and simple operation process.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the description below are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic diagram of a crystal selector according to an embodiment of the present invention;
FIG. 2 is a schematic top view of a crystal selector according to an embodiment of the present invention;
FIG. 3 is a statistical view of the orientation of a single crystal blade produced by the conventional crystal selection method according to example 1;
wherein; 1. a crystal starting section; 2. selecting a crystal section in a spiral way; 201. a helical portion; 202. a straight line portion; 3. a bonding surface; 301. a central region; 302. an outer region; 4. a center trajectory line; 5. the direction of extension is initiated.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without inventive step based on the embodiments of the present invention, are within the scope of protection of the present invention.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting of the invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or to implicitly indicate the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
Referring to fig. 1 and 2, a single crystal superalloy crystal selection method is based on the idea of utilizing columnar crystal competitive growth to eccentrically connect a crystal starting section and a spiral crystal selection section 2 of a crystal selector, so that in the directional solidification process, crystal grains with small orientation of a core part of the crystal starting section enter the spiral crystal selection section 2 from one side of the bottom of the spiral crystal selection section 2 deviated to the initial extension direction 5 (the direction pointed by a straight arrow in the figure) of the spiral crystal selection section 2, thereby obtaining growth advantages, and eliminating crystal grains with large orientation deviation outside the crystal starting section, so as to obtain a single crystal superalloy casting with small orientation deviation.
The eccentric connection means that the center of the upper end face of the crystal starting segment 1 deviates from the central track line 4 of the spiral crystal selection segment 2, and in order to realize that crystal grains with small core orientation of the crystal starting segment enter the spiral crystal selection segment 2 from the bottom of the spiral crystal selection segment 2 to the side of the initial extending direction 5 of the spiral crystal selection segment 2, when the lower end of the spiral crystal selection segment 2 is connected with the upper end face of the crystal starting segment 1, the center O of the upper end face of the crystal starting segment 1 needs to be ensured2Is positioned on a combined surface 3 of the spiral crystal selection section 2 and the crystal starting section 1 and is arranged at one side of the initial extending direction 5 of the spiral crystal selection section 2.
Referring to fig. 2, specifically, the lower end of the spiral crystal selection segment 2 is connected to the upper end face of the crystal initiation segment 1, the center of the upper end face of the crystal initiation segment 1 is located on a joint face 3 of the spiral crystal selection segment 2 and the crystal initiation segment 1, and a central trajectory line 4 deviating from the spiral crystal selection segment 2 is arranged near the inner side (the direction of a curved arrow in the figure) of the spiral crystal selection segment 2, the joint face 3 is divided into a central area 301 and an outer area 302 arranged around the central area 301, and the center of the central area 301 is the center of the central area 301O1The upper end surface of the seed crystal segment 1 is centered on the outer region 302.
The crystal selector with the structure has the advantages that: after the crystal grains with small orientation deviation degree at the core part of the crystal starting section 1 enter the spiral crystal selection section 2, the crystal grains grow upwards in the spiral through hole on the spiral crystal selection section 2, and the crystal grains are more deviated to the inner side of the spiral through hole, so that the growth distance is short, the maximum growth advantage is achieved, and the crystal grains have higher probability of entering a casting cavity through a spiral to form a single crystal high-temperature alloy casting.
Referring to fig. 1, specifically, the crystallization section 1 is cylindrical, the spiral crystal selection section 2 is shaped like a central spiral, and the spiral crystal selection section 2 comprises a spiral part 201 and straight line parts 202 arranged at two ends of the spiral part 201 in parallel; wherein, the two straight line parts 202 are respectively used for connecting the crystal pulling section and the casting, the extending direction of the straight line part 202 and the central axis 0 of the spiral crystal selection section 21-01All form the central axis 0 of the cylindrical crystallization section 12-02And are parallel.
In other possible embodiments, the diameter of the seeding section 1 is controlled to be 12-15 mm, and the height is controlled to be 25-35 mm, and the design has the advantage that the seeding section 1 with the size can obtain a columnar crystal structure with small orientation deviation in the core.
It should be explained that, in practical application, the inner diameter (inner diameter) of the spiral crystal selection section 2 is controlled to be 5-10 mm, the outer diameter (outer diameter) is controlled to be 15-25 mm, and the height is controlled to be 25-35 mm. The spiral crystal selection section 2 with the size can efficiently screen the columnar crystal entering the spiral section, screen out one crystal grain and form a single crystal superalloy casting such as a single crystal blade.
In other possible implementation schemes, in the directional solidification process, the temperatures of an upper heating area and a lower heating area in the directional solidification furnace are kept at 1490-1600 ℃, and the pulling speed is controlled at 1.5-5 mm/min. When the directional solidification is carried out under the condition, a higher temperature gradient can be established in the crystal starting section of the crystal selector, an equiaxial crystal beam with smaller orientation deviation is formed in the core part, and crystal grains entering the spiral section have lower orientation deviation, so that a single crystal superalloy casting with smaller orientation deviation can be finally obtained.
The present invention will be described with reference to specific examples.
Example 1
In the present example, a nickel-based single crystal superalloy DD5 was used as a master alloy, and the alloy composition is shown in table 1.
TABLE 1 weight percentages of alloying elements
Figure BDA0003132910910000051
In the embodiment, a single crystal blade for an aircraft engine is taken as an example, the crystal selector with the structure is selected, and the size of the crystallization section is as follows:
Figure BDA0003132910910000052
spiral size: the internal diameter is 8.5mm, the external diameter is 18.5mm, height is 30mm, spiral anticlockwise upwards, will select the brilliant ware to connect on blade wax matrix through the die set to assemble the module, 15 blades are assembled to a module, through being stained with thick liquid 6 times, drench the sand, form ceramic mould shell, dewax afterwards the sintering make ceramic mould shell. And (3) carrying out directional solidification on the single crystal blade in a Bridgman directional solidification furnace, so that crystal grains with smaller core orientation of the crystal pulling section enter the spiral crystal selection section from one side of the bottom of the spiral crystal selection section, which is deviated to the initial extension direction of the spiral crystal selection section, and the crystal grains with smaller core orientation of the crystal pulling section are more deviated to the inner side of the spiral through hole, the heating temperature of an upper area is 1500 ℃, the heating temperature of a lower area is 1500 ℃, and the pulling speed is 3 mm/min. Three modules were cast and the orientation test was carried out on the single crystal blades obtained after shelling, the results being shown in FIG. 3 (indicated as new in the figure), the average being 5.5 degrees, the proportion of blades having an orientation deviation of > 10 degrees being 6%, with the proportion of blades > 15 degrees being 0%. Under the same conditions, the casting was carried out using a die set of conventional concentric crystal selectors (indicated as conventional in the figure) with an average value of 7.1 ° and a proportion of blades with an orientation deviation of > 10 ° of 18%, with a proportion of blades > 15 ° of 4%.
Unless otherwise indicated, any of the above-described embodiments of the present invention disclose numerical ranges, which are preferred ranges, and any person skilled in the art would understand that: the preferred ranges are merely those values which are obvious or representative of the technical effects which can be achieved. Since the numerical values are too numerous to be exhaustive, some of the numerical values are disclosed in the present invention to illustrate the technical solutions of the present invention, and the above-mentioned numerical values should not be construed as limiting the scope of the present invention.
Meanwhile, if the invention as described above discloses or relates to parts or structural members fixedly connected to each other, the fixedly connected parts may be understood as follows, unless otherwise stated: a detachable fixed connection (for example using a bolt or screw connection) can also be understood as: non-detachable fixed connections (e.g. riveting, welding) can, of course, also be replaced by one-piece structures (e.g. manufactured in one piece using a casting process) (unless it is obvious that one-piece processes cannot be used).
In addition, terms used in any technical solutions disclosed in the present invention to indicate positional relationships or shapes include approximate, similar or approximate states or shapes unless otherwise stated. Any part provided by the invention can be assembled by a plurality of independent components or can be manufactured by an integral forming process.
The above examples are merely illustrative for clearly illustrating the present invention and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. Nor is it intended to be exhaustive of all embodiments. And obvious variations or modifications are intended to be within the scope of the present invention.

Claims (9)

1. A crystal selection method of single crystal superalloy is characterized by comprising the following steps: eccentrically connecting a crystal starting section (1) of a crystal selector with a spiral crystal selecting section (2), so that in the directional solidification process, crystal grains with small core orientation of the crystal starting section enter the spiral crystal selecting section (2) from one side of the bottom of the spiral crystal selecting section (2) deviated to the initial extending direction (5) of the spiral crystal selecting section (2), thereby obtaining growth advantages, eliminating crystal grains with large orientation deviation outside the crystal starting section, and thus obtaining a single crystal high-temperature alloy casting with small orientation deviation;
the lower end of the spiral crystal selection section (2) is connected with the upper end face of the crystal starting section (1), the center of the upper end face of the crystal starting section (1) is positioned on a joint face (3) of the spiral crystal selection section (2) and the crystal starting section (1), and a central trajectory line (4) deviating from the spiral crystal selection section (2) is arranged close to the inner side of the spiral crystal selection section (2);
the crystal starting section (1) is cylindrical, and the spiral crystal selecting section (2) is in a central spiral shape.
2. The crystal selection method according to claim 1, wherein: the bonding surface (3) is divided into a central area (301) and an outer area (302) arranged around the central area (301), and the center of the upper end surface of the crystallization section (1) is positioned on the outer area (302).
3. The crystal selection method according to claim 2, wherein: the crystal starting section (1) is cylindrical.
4. The crystal selection method according to claim 3, wherein: the diameter of the crystal starting section (1) is controlled to be 12-15 mm, and the height is controlled to be 25-35 mm.
5. The crystal selection method according to any one of claims 1 to 4, characterized in that: the inner diameter of the spiral crystal selection section (2) is controlled to be 5-10 mm, the outer diameter is controlled to be 15-25 mm, and the height is controlled to be 25-35 mm.
6. The crystal selection method according to claim 5, wherein: the spiral crystal selection section (2) comprises a spiral part (201) and straight line parts (202) which are arranged at two ends of the spiral part (201) and used for connecting the crystal starting section (1) and a casting, and the extending direction of the straight line parts (202) is parallel to the central axis of the spiral crystal selection section (2).
7. The crystal selection method according to claim 5, wherein: in the directional solidification process, the temperatures of an upper heating area and a lower heating area in the directional solidification furnace are kept at 1490-1600 ℃, and the pulling speed is controlled at 1.5-5 mm/min.
8. A single crystal superalloy casting characterized by: obtained by the crystal selection method according to any one of claims 1 to 7.
9. A single crystal superalloy casting according to claim 8, wherein: the single crystal high temperature alloy casting is a single crystal blade.
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US5062468A (en) * 1989-07-19 1991-11-05 Pcc Airfoils, Inc. Mold and method for casting a single crystal metal article
CN206692774U (en) * 2017-03-17 2017-12-01 泰州市金鹰精密铸造有限公司 C-type cylinder crystal selector
CN206654966U (en) * 2017-03-17 2017-11-21 泰州市金鹰精密铸造有限公司 Z-type cylinder crystal selector
CN109513881B (en) * 2018-11-27 2020-10-27 安徽应流航源动力科技有限公司 Casting method of monocrystalline high-temperature alloy blade capable of precisely controlling three-dimensional crystal orientation
CN112974732B (en) * 2021-05-12 2021-07-30 中国航发北京航空材料研究院 Method for preparing single crystal superalloy by combining solid solution columnar crystal with crystal selection

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