CN113563590A - Novel high-temperature-resistant boron-silicon resin and synthetic method thereof - Google Patents
Novel high-temperature-resistant boron-silicon resin and synthetic method thereof Download PDFInfo
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- 229920005989 resin Polymers 0.000 title claims abstract description 31
- 239000011347 resin Substances 0.000 title claims abstract description 31
- CFOAUMXQOCBWNJ-UHFFFAOYSA-N [B].[Si] Chemical compound [B].[Si] CFOAUMXQOCBWNJ-UHFFFAOYSA-N 0.000 title claims abstract description 19
- 238000010189 synthetic method Methods 0.000 title description 2
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 13
- 239000002904 solvent Substances 0.000 claims abstract description 13
- 238000003786 synthesis reaction Methods 0.000 claims abstract description 13
- 238000005406 washing Methods 0.000 claims abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 10
- 239000010703 silicon Substances 0.000 claims abstract description 10
- 238000001308 synthesis method Methods 0.000 claims abstract description 8
- WBJFJXOBKQZPMK-UHFFFAOYSA-N [SiH4].[B] Chemical compound [SiH4].[B] WBJFJXOBKQZPMK-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000001035 drying Methods 0.000 claims abstract description 7
- 239000000178 monomer Substances 0.000 claims abstract description 7
- 125000004429 atom Chemical group 0.000 claims abstract description 4
- 125000004430 oxygen atom Chemical group O* 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims abstract 5
- 230000002194 synthesizing effect Effects 0.000 claims abstract 5
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 47
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 28
- 238000003756 stirring Methods 0.000 claims description 22
- 239000010410 layer Substances 0.000 claims description 18
- 238000006243 chemical reaction Methods 0.000 claims description 16
- 239000012044 organic layer Substances 0.000 claims description 16
- 239000000047 product Substances 0.000 claims description 16
- 239000003960 organic solvent Substances 0.000 claims description 14
- 239000007788 liquid Substances 0.000 claims description 13
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 11
- 238000000605 extraction Methods 0.000 claims description 10
- 238000001816 cooling Methods 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 claims description 6
- 238000007599 discharging Methods 0.000 claims description 6
- NUFVQEIPPHHQCK-UHFFFAOYSA-N ethenyl-methoxy-dimethylsilane Chemical group CO[Si](C)(C)C=C NUFVQEIPPHHQCK-UHFFFAOYSA-N 0.000 claims description 6
- 239000012467 final product Substances 0.000 claims description 6
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 claims description 6
- 238000001291 vacuum drying Methods 0.000 claims description 6
- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical compound [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 5
- AHUXYBVKTIBBJW-UHFFFAOYSA-N dimethoxy(diphenyl)silane Chemical group C=1C=CC=CC=1[Si](OC)(OC)C1=CC=CC=C1 AHUXYBVKTIBBJW-UHFFFAOYSA-N 0.000 claims description 5
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 claims description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- PARWUHTVGZSQPD-UHFFFAOYSA-N phenylsilane Chemical compound [SiH3]C1=CC=CC=C1 PARWUHTVGZSQPD-UHFFFAOYSA-N 0.000 claims description 4
- 230000035484 reaction time Effects 0.000 claims description 4
- CVQVSVBUMVSJES-UHFFFAOYSA-N dimethoxy-methyl-phenylsilane Chemical compound CO[Si](C)(OC)C1=CC=CC=C1 CVQVSVBUMVSJES-UHFFFAOYSA-N 0.000 claims description 3
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical group CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 claims description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 2
- YYLGKUPAFFKGRQ-UHFFFAOYSA-N dimethyldiethoxysilane Chemical compound CCO[Si](C)(C)OCC YYLGKUPAFFKGRQ-UHFFFAOYSA-N 0.000 claims description 2
- 238000004821 distillation Methods 0.000 claims description 2
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 claims description 2
- 229910000077 silane Inorganic materials 0.000 claims description 2
- 230000005855 radiation Effects 0.000 abstract description 9
- 229920002050 silicone resin Polymers 0.000 abstract description 6
- 238000010521 absorption reaction Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 5
- 239000007795 chemical reaction product Substances 0.000 description 4
- 238000005292 vacuum distillation Methods 0.000 description 4
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005251 gamma ray Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- XPEIJWZLPWNNOK-UHFFFAOYSA-N (4-phenylphenyl)boronic acid Chemical compound C1=CC(B(O)O)=CC=C1C1=CC=CC=C1 XPEIJWZLPWNNOK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910000085 borane Inorganic materials 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/48—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
- C08G77/56—Boron-containing linkages
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- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Silicon Polymers (AREA)
Abstract
The invention discloses a novel high-temperature-resistant boron-silicon resin and a synthesis method thereof, and the method specifically comprises the following steps: a: b, synthesizing a boron silane monomer; b: b-containing silicon resin synthesis; c: extracting and washing a product; d: removing the solvent; e: and (5) drying at high temperature in vacuum. The borosilicate resin is of a cross structure, B atoms partially replace O atoms in the silicone resin to form a Si-B-Si molecular structure, and the molecular structure not only endows the silicone resin with excellent high temperature resistance, but also endows the silicone resin with excellent neutron absorption performance, and can be used in experimental places needing neutron radiation shielding, such as pressure vessel reactor cavity neutron shielding, nuclear radiation electron device shielding, aerospace radiation shielding and the like in a novel nuclear reactor.
Description
Technical Field
The invention relates to preparation of a high-temperature resistant material, in particular to novel high-temperature resistant boron-silicon resin and a synthesis method thereof.
Background
With the continuous development and deepening of aerospace technology in China, higher requirements are put forward on the tolerance of basic materials, such as high and low temperature resistance, long service life, space radiation and the like, and a neutron shielding material which can resist 300 ℃ for 60 years is designed in a third-generation nuclear power station in China. Therefore, the development of the high-temperature-resistant neutron shielding material is a technical innovation of the projects and is an urgent technical research scheme, and the development and application research of the high-temperature-resistant long-life material not only has great economic value, but also can powerfully promote the rapid development of the national defense science and technology industry in China and has good social value.
Disclosure of Invention
The invention aims to provide a novel high-temperature-resistant boron-silicon resin and a synthesis method thereof, the synthesized boron silicon resin has the performance of resisting the high temperature of more than 450 ℃, has certain resistance to neutron and gamma-ray radiation, and can be used in industries of aviation, aerospace, ships, nuclear power and the like.
In order to achieve the technical effects, the invention provides the following technical scheme:
a synthesis method of novel high-temperature-resistant boron-silicon resin comprises the following steps:
a: b, synthesis of a boron silane monomer: introducing a boron-containing compound into a toluene solution of phenyl silane, stirring and fully reacting, and removing a solvent to obtain a target product;
b: b-containing silicon resin synthesis: adding the target product obtained in the step A into methylsilane or vinylsilane, adding water, and fully stirring and reacting;
c: product extraction and washing: after the reaction of B, adding an organic solvent into the reaction system for extraction, standing for layering, removing a water layer, adding deionized water into the organic layer, stirring and washing at normal temperature, standing for layering, removing the water layer, and repeating the operation until the pH value of the washed water layer is 7-7.5;
d: removing the solvent: vacuum distilling the washed organic layer to remove the organic solvent to obtain colorless transparent liquid;
e: high-temperature vacuum drying: and D, devolatilizing the colorless transparent liquid obtained in the step D at high temperature in vacuum, cooling to room temperature after drying when the volatile matter is lower than 1%, and discharging to a charging basket to obtain a final product.
The further technical proposal is that the phenyl silane in the step A is diphenyl dimethoxy silane or phenyl methyl dimethoxy silane.
The further technical scheme is that in the step A, the stirring temperature is 35-75 ℃, the reaction time is 3-16 hours, and the mass ratio of the boron-containing compound to the silane is 1: 3-1: 10.
The further technical scheme is that in the step B, methylsilane is methyltrimethoxysilane, methyltriethoxysilane, dimethyldimethoxysilane or dimethyldiethoxysilane, and vinylsilane is vinyldimethylmethoxysilane or vinyltriethoxysilane.
The further technical scheme is that the adding ratio of the target product obtained in the step (B) and methylsilane or vinyl silane is 1: 5-1: 15, the stirring temperature is 35-150 ℃, and the reaction time is 3-10 hours.
The further technical scheme is that in the step C, the organic solvent is selected from toluene or methyl double-end socket, and the extraction time is 20-40 minutes.
The further technical scheme is that the distillation temperature in the step D is 100-120 ℃.
The further technical scheme is that the vacuum degree of vacuum devolatilization in the step E is-0.1 to-0.098 MPa, and the temperature is 125 to 165 ℃.
The invention also provides the novel high-temperature-resistant boron-silicon resin prepared by the preparation method, the novel high-temperature-resistant boron-silicon resin is of a three-dimensional structure, and B atoms partially replace O atoms in the silicon resin to form a Si-B-Si molecular structure.
The B atom can be connected with different groups, such as phenyl, methyl, vinyl, hydroxyl and halogen, so that the molecular structure not only endows the silicone resin with excellent high temperature resistance, but also endows the silicone resin with excellent neutron absorption performance, and the silicon resin can be used for neutron shielding in a reactor cavity of a novel nuclear reactor, nuclear radiation electron device shielding, radiation shielding for aerospace and other experimental places needing to shield neutron radiation.
Compared with the prior art, the invention has the following beneficial effects: the borosilicate resin synthesized by the invention has the performance of resisting high temperature of more than 450 ℃, has certain tolerance to neutron and gamma-ray radiation, and can be used for industries of aviation, aerospace, ships, nuclear power and the like.
Drawings
Fig. 1 is a schematic diagram of a molecular structure of the novel high-temperature-resistant boron-silicone resin.
Detailed Description
Example 1
A: b, synthesis of a boron silane monomer:
introducing 4 g of boron trichloride into a toluene solution containing 20 g of diphenyldimethoxysilane, stirring at the temperature of 65 ℃, reacting for 10 hours, and removing the solvent to obtain a target product.
B: b-containing silicon resin synthesis:
adding methyl trimethoxy silane, dimethyl dimethoxy silane and vinyl dimethyl methoxy silane into the reaction product obtained in the step A according to the weight ratio of 1:10, adding 15 g of water, stirring at the temperature of 90 ℃, and reacting for 7.5 hours to finish the reaction.
C: product extraction and washing:
and after the reaction of B is finished, respectively adding a certain amount of toluene or methyl double-end socket into the reaction system for three times, stirring and extracting for about 30 minutes at normal temperature, and standing for layering. After removal of the aqueous layer, the organic layer liquids were combined. And adding a proper amount of deionized water into the organic layer, stirring and washing at normal temperature, standing for layering, and removing the water layer. Repeating the above operation until the pH value of the washed water layer is 7-7.5.
D: removing the solvent:
and (3) carrying out vacuum distillation on the washed organic layer at 110 ℃, and removing the organic solvent toluene or methyl double-end socket. Colorless transparent liquid is obtained.
E: high-temperature vacuum drying:
and (3) devolatilizing the colorless transparent liquid from which the organic solvent is removed through high-temperature vacuum, wherein the vacuum degree is-0.1 to-0.098 MPa, and the temperature is 125 to 165 ℃. And when the volatile matter is less than 1%, drying, cooling to room temperature, and discharging into a charging basket to obtain the final product.
Example 2
A: b, synthesis of a boron silane monomer:
an organoboron compound such as 12 g of boric acid is introduced into a toluene solution containing 60 g of diphenyldimethoxysilane, stirred at 475 ℃ and reacted for 16 hours, and then the solvent is removed to obtain the target product.
B: b-containing silicon resin synthesis:
a, the reaction product obtained is as follows 1:5 weight portions of methyl triethoxysilane, dimethyl dimethoxysilane and vinyl dimethyl methoxysilane were added, 20 g of water were added, the mixture was stirred at a temperature of 75 ℃, and the reaction was completed after 8 hours.
C: product extraction and washing:
and after the reaction of B is finished, adding 70 g of toluene or methyl double-end socket into the reaction system for three times, stirring and extracting for about 30 minutes at normal temperature, and standing for layering. After removal of the aqueous layer, the organic layers were combined. And adding a certain amount of deionized water into the organic layer, stirring and washing at normal temperature, standing for layering, and removing the water layer. Repeating the above operation until the pH value of the washed water layer is 7-7.5.
D: removing the solvent:
and (3) carrying out vacuum distillation on the washed organic layer at 110 ℃, and removing the organic solvent toluene or methyl double-end socket. Colorless transparent liquid is obtained.
E: high-temperature vacuum drying:
the colorless transparent liquid without the organic solvent is devolatilized by high temperature vacuum, the vacuum degree is-0.1 to-0.098 MPa, and the temperature is 125 ℃. And when the volatile matter is less than 1%, drying, cooling to room temperature, and discharging into a charging basket to obtain the final product.
Example 3:
a: b, synthesis of a boron silane monomer:
5 g of 4-biphenylboronic acid is introduced into a toluene solution of 25 g of phenylmethyldimethoxysilane, stirred at a temperature of 65 ℃ and reacted for 12 hours, and then the solvent is removed to obtain the target product.
B: b-containing silicon resin synthesis:
and A, adding the reaction product into methyl triethoxysilane, dimethyl dimethoxysilane and vinyl dimethyl methoxysilane according to the weight ratio of 1:13, adding 50 g of water, stirring at the temperature of 100 ℃, and reacting for 10 hours to finish the reaction.
C: product extraction and washing:
and after the reaction of B is finished, respectively adding 50 g of toluene or methyl double-end socket into the reaction system for three times, stirring and extracting for about 30 minutes at normal temperature, and standing for layering. After removing the water layer, combining the organic layers, adding a certain amount of deionized water into the organic layers, stirring and washing at normal temperature, standing for layering, and removing the water layer. Repeating the above operation until the pH value of the washed water layer is 7-7.5.
D: removing the solvent:
and (3) carrying out vacuum distillation on the washed organic layer at 110 ℃, and removing the organic solvent toluene or methyl double-end socket. Colorless transparent liquid is obtained.
E: high-temperature vacuum drying:
and (3) devolatilizing the colorless transparent liquid from which the organic solvent is removed through high-temperature vacuum, wherein the vacuum degree is-0.1 to-0.098 MPa, and the temperature is 125 to 165 ℃. And when the volatile matter is less than 1%, drying, cooling to room temperature, and discharging into a charging basket to obtain the final product.
Example 4:
a: b, synthesis of a boron silane monomer:
5 g of borane is introduced into 30 g of toluene solution of diphenyldimethoxysilane, stirred at the temperature of 75 ℃, reacted for 16 hours, and then the solvent is removed to obtain the target product.
B: b-containing silicon resin synthesis:
and A, adding the reaction product into methyl triethoxysilane, dimethyl dimethoxysilane and vinyl dimethyl methoxysilane according to the weight ratio of 1:15, adding 100 g of water, stirring at the temperature of 150 ℃, and reacting for 10 hours to finish the reaction.
C: product extraction and washing:
and after the reaction of B is finished, respectively adding 50 g of toluene or methyl double-end socket into the reaction system for three times, stirring and extracting for about 30 minutes at normal temperature, and standing for layering. After removing the water layer, combining the organic layers, adding a certain amount of deionized water into the organic layers, stirring and washing at normal temperature, standing for layering, and removing the water layer. Repeating the above operation until the pH value of the washed water layer is 7-7.5.
D: removing the solvent:
and (3) carrying out vacuum distillation on the washed organic layer at 110 ℃, and removing the organic solvent toluene or methyl double-end socket. Colorless transparent liquid is obtained.
E: high-temperature vacuum drying:
and (3) devolatilizing the colorless transparent liquid from which the organic solvent is removed through high-temperature vacuum, wherein the vacuum degree is-0.1 to-0.098 MPa, and the temperature is 125 to 165 ℃. And when the volatile matter is less than 1%, drying, cooling to room temperature, and discharging into a charging basket to obtain the final product.
Although the present invention has been described herein with reference to the illustrated embodiments thereof, which are intended to be preferred embodiments of the present invention, it is to be understood that the invention is not limited thereto, and that numerous other modifications and embodiments can be devised by those skilled in the art that will fall within the spirit and scope of the principles of this disclosure.
Claims (9)
1. A synthesis method of novel high-temperature-resistant boron-silicon resin is characterized by comprising the following steps:
a: b, synthesis of a boron silane monomer: introducing a boron-containing compound into a toluene solution of phenyl silane, stirring and fully reacting, and removing a solvent to obtain a target product;
b: b-containing silicon resin synthesis: adding methylsilane or vinylsilane and water into the target product obtained in the step A, and fully stirring and reacting;
c: product extraction and washing: after the reaction of B, adding an organic solvent into the reaction system for extraction, standing for layering, removing a water layer, adding deionized water into the organic layer, stirring and washing at normal temperature, standing for layering, removing the water layer, and repeating the operation until the pH value of the washed water layer is 7-7.5;
d: removing the solvent: vacuum distilling the washed organic layer to remove the organic solvent to obtain colorless transparent liquid;
e: high-temperature vacuum drying: and D, devolatilizing the colorless transparent liquid obtained in the step D at high temperature in vacuum, cooling to room temperature after drying when the volatile matter is lower than 1%, and discharging to a charging basket to obtain a final product.
2. The method for synthesizing novel high temperature resistant boron-silicon resin as claimed in claim 1, wherein in step A, the phenyl silane is diphenyl dimethoxy silane or phenyl methyl dimethoxy silane.
3. The synthesis method of the novel high-temperature-resistant boron-silicon resin as claimed in claim 1, wherein in the step A, the stirring temperature is 45-85 ℃, the reaction time is 3-16 hours, and the mass ratio of the boron-containing compound to the silane is 1: 3-1: 10.
4. The method for synthesizing novel high temperature resistant boron-silicon resin as claimed in claim 1, wherein in step B, methylsilane is methyltrimethoxysilane, methyltriethoxysilane, dimethyldimethoxysilane or dimethyldiethoxysilane, and vinylsilane is vinyldimethylmethoxysilane or vinyltriethoxysilane.
5. The synthesis method of the novel high-temperature-resistant boron-silicon resin as claimed in claim 1, wherein the addition ratio of the target product obtained in the step B to methylsilane or vinylsilane is 1: 5-1: 15, the stirring temperature is 35-150 ℃, and the reaction time is 3-10 hours.
6. The synthesis method of the novel high-temperature-resistant boron-silicon resin as claimed in claim 1, wherein the organic solvent in the step C is selected from toluene or methyl double-end socket, and the extraction time is 20-40 minutes.
7. The method for synthesizing the novel high-temperature-resistant boron-silicon resin according to claim 1, wherein the distillation temperature in the step D is 100-120 ℃.
8. The method for synthesizing the novel high-temperature-resistant boron-silicon resin as claimed in claim 1, wherein the vacuum degree of vacuum devolatilization in the step E is-0.1 to-0.098 MPa, and the temperature is 125 to 165 ℃.
9. The novel high-temperature-resistant boron-silicon resin prepared according to any one of claims 1 to 8 is characterized in that the novel high-temperature-resistant boron-silicon resin is of a three-dimensional structure, and B atoms partially replace O atoms in the silicon resin to form a Si-B-Si molecular structure.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114835903A (en) * | 2022-04-28 | 2022-08-02 | 北京理工大学 | Boron-containing silsesquioxane, preparation method thereof, modified phenolic resin, preparation method and application thereof |
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| WO2016082287A1 (en) * | 2014-11-27 | 2016-06-02 | 深圳市森日有机硅材料有限公司 | Mdq phenyl vinyl silicone resin and preparation method therefor |
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- 2021-08-09 CN CN202110908611.6A patent/CN113563590A/en active Pending
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| WO2016082287A1 (en) * | 2014-11-27 | 2016-06-02 | 深圳市森日有机硅材料有限公司 | Mdq phenyl vinyl silicone resin and preparation method therefor |
| CN104629057A (en) * | 2015-02-10 | 2015-05-20 | 项炯华 | Methyl phenyl vinyl borosilicate resin and preparation method and application thereof |
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| 王永生等: "《含硼多乙烯基有机硅树脂的制备及耐热性能研究》", 《功能材料》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114835903A (en) * | 2022-04-28 | 2022-08-02 | 北京理工大学 | Boron-containing silsesquioxane, preparation method thereof, modified phenolic resin, preparation method and application thereof |
| CN114835903B (en) * | 2022-04-28 | 2023-03-14 | 北京理工大学 | Boron-containing silsesquioxane and preparation method thereof, modified phenolic resin and preparation method and application thereof |
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