CN113556030A - Silicon carbide power semiconductor module device of integrated buffer circuit - Google Patents

Silicon carbide power semiconductor module device of integrated buffer circuit Download PDF

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Publication number
CN113556030A
CN113556030A CN202110815822.5A CN202110815822A CN113556030A CN 113556030 A CN113556030 A CN 113556030A CN 202110815822 A CN202110815822 A CN 202110815822A CN 113556030 A CN113556030 A CN 113556030A
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CN
China
Prior art keywords
silicon carbide
snubber
power semiconductor
semiconductor module
buffer circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202110815822.5A
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Chinese (zh)
Inventor
杨书豪
王志坤
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Guanghua Lingang Engineering Application Technology Research and Development Shanghai Co Ltd
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Guanghua Lingang Engineering Application Technology Research and Development Shanghai Co Ltd
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Application filed by Guanghua Lingang Engineering Application Technology Research and Development Shanghai Co Ltd filed Critical Guanghua Lingang Engineering Application Technology Research and Development Shanghai Co Ltd
Priority to CN202110815822.5A priority Critical patent/CN113556030A/en
Priority to PCT/CN2021/113604 priority patent/WO2023000425A1/en
Publication of CN113556030A publication Critical patent/CN113556030A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H02M1/34—Snubber circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Inverter Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

The invention provides a silicon carbide power semiconductor module device of an integrated buffer circuit. According to the invention, the active buffer circuit is integrated in the single-phase half-bridge, single-phase full-bridge or three-phase bridge type silicon carbide power semiconductor module, so that the switching loss of the silicon carbide power semiconductor module can be reduced, the oscillation and damping loss can be reduced, the voltage peak can be reduced, the silicon carbide power semiconductor module can work at higher voltage, or a chip with a low voltage grade is selected to reduce the conduction loss, and the efficiency of the silicon carbide power electronic system is improved.

Description

Silicon carbide power semiconductor module device of integrated buffer circuit
Technical Field
The application relates to the technical field of silicon carbide power semiconductor devices, in particular to a silicon carbide power semiconductor module device of an integrated buffer circuit.
Background
Silicon carbide power semiconductor modules are widely used in half-bridge circuits, full-bridge circuits and three-phase bridge circuits (fig. 1 to 3), and due to serious electromagnetic interference and noise caused by high-speed switching of silicon carbide MOSFETs, parasitic inductance of the silicon carbide power semiconductor modules causes high oscillation and voltage spikes. The integrated packaging of the passive snubber circuit within the silicon carbide power semiconductor module, as shown in fig. 4, may reduce the oscillation and voltage spikes of the three-phase silicon carbide power semiconductor module, thereby improving the efficiency and reliability of the silicon carbide power electronic system. However, when the passive snubber circuit is packaged in the sic power semiconductor module, a voltage drop will occur at the instant the sic power semiconductor module is turned on, resulting in a longer on-time and higher on-losses.
Disclosure of Invention
In order to solve the technical problems, the invention provides a silicon carbide power semiconductor module device of an integrated buffer circuit, wherein an active buffer circuit is integrated in a single-phase half-bridge, single-phase full-bridge or three-phase bridge silicon carbide power semiconductor module, so that the switching loss of the silicon carbide power semiconductor module can be reduced, the oscillation and damping loss can be reduced, the voltage spike can be reduced, the silicon carbide power semiconductor module can work at higher voltage, or a chip with a low voltage level is selected to reduce the conduction loss, and the efficiency of a silicon carbide power electronic system is improved.
The technical scheme adopted by the invention is as follows:
a silicon carbide power semiconductor module device of an integrated buffer circuit is characterized in that an integrated active buffer circuit is packaged in a single-phase half-bridge, a single-phase full-bridge or a three-phase bridge silicon carbide power semiconductor module;
the packaging integrated active buffer circuit comprises a silicon carbide MOSFET S of the packaging integrated active buffer circuitSnubberCapacitor C for packaging integrated active buffer circuitSnubberInductor L of packaging integrated active buffer circuitSnubber。
Further, the inductor of the package integrated active snubber circuit is a package loop parasitic inductor or a planar inductor.
Furthermore, the capacitor of the packaging integrated active buffer circuit is a planar packaging multilayer ceramic capacitor.
Further, the package is integrated with a capacitor C of an active snubber circuit in a silicon carbide power semiconductor module deviceSnubberInductor L of the packaging integrated active buffer circuitSnubberAnd the silicon carbide MOSFET S of the packaging integrated active buffer circuitSnubberAre connected in series and in parallel at two ends of a three-phase bridge arm circuit, and C is connected with a copper-clad ceramic substrateSnubber、LSnubberAnd SSnubberThe formed active buffer circuit is interconnected with the three-phase bridge arm circuit and integrated on a copper-clad ceramic substrate of the three-phase silicon carbide power semiconductor module device.
Further, the silicon carbide MOSFET encapsulating the integrated active snubber circuit is commonly grounded to the downtubes S2, S4, S6 within the single-phase half-bridge, single-phase full-bridge, or three-phase bridge silicon carbide power semiconductor module.
Through the embodiment of the application, the following technical effects can be obtained:
compared with the prior art, the active buffer circuit is packaged and integrated in the single-phase half-bridge, single-phase full-bridge or three-phase bridge silicon carbide power semiconductor module, so that the switching loss of the silicon carbide power semiconductor module can be reduced by more than 50%, the voltage and current oscillation and damping loss of the silicon carbide chip are reduced, the voltage peak of the silicon carbide chip is reduced, the silicon carbide chip works at higher voltage, the voltage allowance of the silicon carbide chip is improved, or the silicon carbide chip with low voltage grade is selected to reduce the conduction loss, reduce the cost and improve the reliability and efficiency of the silicon carbide power electronic system.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present application, and those skilled in the art can also obtain other drawings according to the drawings without inventive labor.
FIG. 1 is a schematic circuit diagram of a half-bridge circuit according to the prior art;
FIG. 2 is a schematic circuit diagram of a full bridge circuit in the prior art;
FIG. 3 is a schematic circuit diagram of a prior art three-phase bridge circuit;
FIG. 4 is a schematic circuit diagram of a three-phase SiC power semiconductor module with an integrated passive snubber circuit according to the prior art;
fig. 5 is a schematic circuit diagram of a three-phase silicon carbide power semiconductor module device integrated with an active snubber circuit according to the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Fig. 5 is a schematic circuit diagram of a three-phase silicon carbide power semiconductor module device integrated with an active snubber circuit according to the present invention. The integrated active snubber circuit is packaged within a single-phase half-bridge, single-phase full-bridge, or three-phase bridge silicon carbide power semiconductor module, as shown in fig. 5. SSnubberIs a silicon carbide MOSFET packaged with an integrated active snubber circuit, which is connected to a lower tube (S) in a single-phase half-bridge, single-phase full-bridge or three-phase bridge silicon carbide power semiconductor module2、S4、S6) And the driving is easy. CSnubberThe capacitor is a capacitor of a packaging integrated active buffer circuit, and is a multilayer ceramic capacitor of a planar packaging. L isSnubberThe inductor of the packaging integrated active buffer circuit can be a parasitic inductor of a packaging loop or a planar inductor.
As shown in fig. 5, in the silicon carbide power semiconductor module devices (S1 to S6), a planar packaged capacitor Csnubber, a planar inductor lsnbber, and an active snubber circuit switch silicon carbide MOSFET Ssnubber are connected in series with each other and connected in parallel to both ends of a three-phase bridge arm circuit formed in S1 to S6, and an active snubber circuit formed by Csnubber, lsnbber, and Ssnubber and a three-phase bridge arm circuit formed in S1 to S6 are interconnected by a copper-clad ceramic substrate and integrated on the copper-clad ceramic substrate of the three-phase silicon carbide power semiconductor module device.
In the prior art, an active buffer circuit is not integrated in the package of a power semiconductor module, if the power semiconductor module needs to be connected with the buffer circuit, the power semiconductor module needs to be connected with the buffer circuit through a wire, and the connection wire generates large stray inductance to influence the performance of the buffer circuit. According to the scheme, the integrated active buffer circuit is packaged in the single-phase half-bridge, single-phase full-bridge or three-phase bridge type silicon carbide power semiconductor module, the switching loss of the silicon carbide power semiconductor module can be reduced by more than 50%, the voltage and current oscillation and damping loss of the silicon carbide chip are reduced, the voltage spike of the silicon carbide chip is reduced at the same time, the silicon carbide chip works at higher voltage, the voltage allowance of the silicon carbide chip is improved, or the silicon carbide chip with a low voltage grade is selected to reduce the conduction loss and reduce the cost, and the reliability and the efficiency of the silicon carbide power electronic system are improved.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned. Furthermore, it is obvious that the word "comprising" does not exclude other elements or steps, and the singular does not exclude the plural. A plurality of units or means recited in the apparatus claims may also be implemented by one unit or means in software or hardware. The terms first, second, etc. are used to denote names, but not any particular order.

Claims (5)

1. A silicon carbide power semiconductor module device of an integrated buffer circuit is characterized in that an integrated active buffer circuit is packaged in a single-phase half-bridge, a single-phase full-bridge or a three-phase bridge silicon carbide power semiconductor module;
the packaging integrated active buffer circuit comprises a silicon carbide MOSFET S of the packaging integrated active buffer circuitSnubberCapacitor C for packaging integrated active buffer circuitSnubberPackaging integrated activeInductance L of buffer circuitSnubber。
2. The apparatus of claim 1, wherein the inductance of the package integrated active snubber circuit is a package loop parasitic inductance or a planar inductance.
3. The apparatus of claim 1, wherein the capacitor of the packaged integrated active snubber circuit is a planar packaged multilayer ceramic capacitor.
4. The device of claim 1, wherein the package is integrated with a capacitor C of an active snubber circuit within a silicon carbide power semiconductor module deviceSnubberInductor L of the packaging integrated active buffer circuitSnubberAnd the silicon carbide MOSFET S of the packaging integrated active buffer circuitSnubberAre connected in series and in parallel at two ends of a three-phase bridge arm circuit, and C is connected with a copper-clad ceramic substrateSnubber、LSnubberAnd SSnubberThe formed active buffer circuit is interconnected with the three-phase bridge arm circuit and integrated on a copper-clad ceramic substrate of the three-phase silicon carbide power semiconductor module device.
5. The apparatus of claim 1, wherein the silicon carbide MOSFET encapsulating the integrated active snubber circuit is common to the downtubes S2, S4, S6 within a single-phase half-bridge, single-phase full-bridge, or three-phase bridge silicon carbide power semiconductor module.
CN202110815822.5A 2021-07-19 2021-07-19 Silicon carbide power semiconductor module device of integrated buffer circuit Pending CN113556030A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN202110815822.5A CN113556030A (en) 2021-07-19 2021-07-19 Silicon carbide power semiconductor module device of integrated buffer circuit
PCT/CN2021/113604 WO2023000425A1 (en) 2021-07-19 2021-08-19 Silicon carbide power semiconductor module device having integrated snubber circuit

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Application Number Priority Date Filing Date Title
CN202110815822.5A CN113556030A (en) 2021-07-19 2021-07-19 Silicon carbide power semiconductor module device of integrated buffer circuit

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5949664A (en) * 1997-06-19 1999-09-07 Wisconsin Alumni Research Foundation Current stiff converters with resonant snubbers
CN107222109A (en) * 2017-07-18 2017-09-29 北京航空航天大学 A kind of two-way isolated DC DC converters containing active snubber
CN208241590U (en) * 2018-05-18 2018-12-14 国网山东省电力公司菏泽供电公司 A kind of booster converter of soft-switch PWM-PFC alternating current-direct current input
CN110350816A (en) * 2019-07-16 2019-10-18 福州大学 A kind of single-stage and-phase current source inverter of energy storage inductor parallel connection Active Snubber Circuit

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011076573A1 (en) * 2011-05-27 2012-11-29 Robert Bosch Gmbh Snubber circuit for DC-DC converter
JP5932269B2 (en) * 2011-09-08 2016-06-08 株式会社東芝 Power semiconductor module and driving method of power semiconductor module
CN103095114B (en) * 2013-01-18 2016-03-02 重庆大学 A kind of lossless buffer circuit being applicable to Boost
US9768678B1 (en) * 2016-11-16 2017-09-19 Silanna Asia Pte Ltd Switching regulator synchronous node snubber circuit
CN108063548A (en) * 2018-02-05 2018-05-22 池州学院 A kind of buffer circuit for BUCK converters
CN109905020A (en) * 2019-03-27 2019-06-18 浙江大学 A kind of driving device of integrated buffer circuit
CN110138195B (en) * 2019-05-24 2020-10-27 哈尔滨工业大学 Nondestructive buffer circuit for restraining voltage spike and current resonance of GaN half-bridge module and test circuit thereof
CN112332692A (en) * 2020-11-23 2021-02-05 西安热工研究院有限公司 High-frequency power supply inverter system with buffer circuit for electric precipitation

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5949664A (en) * 1997-06-19 1999-09-07 Wisconsin Alumni Research Foundation Current stiff converters with resonant snubbers
CN107222109A (en) * 2017-07-18 2017-09-29 北京航空航天大学 A kind of two-way isolated DC DC converters containing active snubber
CN208241590U (en) * 2018-05-18 2018-12-14 国网山东省电力公司菏泽供电公司 A kind of booster converter of soft-switch PWM-PFC alternating current-direct current input
CN110350816A (en) * 2019-07-16 2019-10-18 福州大学 A kind of single-stage and-phase current source inverter of energy storage inductor parallel connection Active Snubber Circuit

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SUBODH MADIWALE: "数字控制实现带有源缓冲的高可靠性DC-DC功率转换", 《ANALOG DEVICES技术文章》 *

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Application publication date: 20211026